KR20190130148A - 금속 페이스트에 의해 부품들을 연결하기 위한 방법 - Google Patents

금속 페이스트에 의해 부품들을 연결하기 위한 방법 Download PDF

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Publication number
KR20190130148A
KR20190130148A KR1020197031081A KR20197031081A KR20190130148A KR 20190130148 A KR20190130148 A KR 20190130148A KR 1020197031081 A KR1020197031081 A KR 1020197031081A KR 20197031081 A KR20197031081 A KR 20197031081A KR 20190130148 A KR20190130148 A KR 20190130148A
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South Korea
Prior art keywords
metal paste
parts
drying
range
contact surface
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KR1020197031081A
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English (en)
Inventor
볼프강 슈미트
미하엘 섀퍼
수잔네 클라우디아 두흐
엔스 나흐라이너
리 메이 추
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헤레우스 도이칠란트 게엠베하 운트 코. 카게
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Publication of KR20190130148A publication Critical patent/KR20190130148A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B22F1/0059—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

본 발명은 부품들을 연결하기 위한 방법으로서, (1) 제1 부품의 접촉면에 유기 용매를 함유하는 금속 페이스트를 도포하는 단계, (2) 선택적으로 제1 부품에 연결될 제2 부품의 접촉면에 금속 페이스트를 도포하는 단계, (3) 2개의 부품들과 그 사이에 금속 페이스트의 층을 갖는 샌드위치 배치구조를 형성하는 단계, (4) 2개의 부품들 사이의 금속 페이스트의 층을 건조하는 단계, (5) 건조된 금속 페이스트의 층을 포함하는 샌드위치 배치구조를 상압소결하는 단계를 포함하며, 건조 및 상압소결은 750 내지 1500 nm 파장 범위의 피크 파장을 갖는 적외선으로 조사함에 의해 수행된다. 부품들은 기판들, 능동 부품들 및 수동 부품들로 구성되는 그룹으로부터 선택될 수 있다. 부품들 중 하나 또는 양자는 적외선에 대해 투과성일 수 있다. 단계 (4) 및/또는 단계 (5)는 산소를 함유하는 분위기에서 또는 산소가 없는 분위기에서 수행될 수 있다. 양자의 경우들에서, 부품들 중 적어도 하나는 산화 민감성 접촉면을 가질 수 있다.

Description

금속 페이스트에 의해 부품들을 연결하기 위한 방법
본 발명은 금속 페이스트에 의해 부품들을 연결하기 위한 방법(method for connecting components by means of a metal paste)에 관한 것이다.
전력 및 가전제품들(power and consumer electronics)의 분야에서, 높은 압력 및 온도 민감성을 갖는 부품들의 연결은 특히 도전적인 과제이다. 이러한 이유로, 그러한 압력- 및 온도- 민감성 부품들은 종종 접착(adhesion)에 의해 서로 연결된다. 그러나, 접착 기술은 단지 불충분한 열 전도성 및/또는 전기 전도성을 갖는 부품들 사이의 접촉점들이 각각 이에 의해 형성된다는 단점을 갖는다.
이러한 문제점의 공지된 해법은 소결(sintering)에 의해 무가압 방식으로(in a pressureless manner) 연결될 부품들을 연결시키는 것이다. 상압소결법(pressureless sintering)은 부품들을 안정적으로 연결하기 위한 매우 간단한 방법이다. 유기 용매를 함유하는 금속 페이스트는 보통 연결될 부품들 중 하나 또는 양자의 연결될 접촉면에 도포되며, 그리고, 서로를 향하면서, 연결될 접촉면들은 사이에 배치된 금속 페이스트의 층에 의해 샌드위치 배치구조를 형성함에 의해 서로 접촉하게 된다. 부품들의 서로를 향하는 2개의 접촉면들은 이에 의해 공동의 오버랩 표면(joint overlap surface)을 형성한다. 건조 단계가 상승된 온도에서 뒤따르며 후속하여 추가의 상승된 온도에서 무가압 방식으로(가압이 없는) 수행되는 소결 단계가 뒤따르며, 그 과정 중에 부품들 사이의 고정된 기계적 연결이 형성된다. 건조 및 소결은 보통 대류식 오븐(컨벡션 오븐)들에서 수행된다. 예를 들면 1 내지 25 ㎟ 범위의 연결될 부품들의 연결 또는 접촉면, 각각, 또는 오버랩 표면의 크기에 의존하면서, 이러한 종래기술의 건조 공정은 100 내지 160℃ 범위의 오븐 온도에서 30 내지 180분 범위의 시간을 필요로 한다. 너무 짧은 건조 시간을 선택하는 경우, 원치 않은 결함들은 종종, 예를 들면, 층 내에, 수축공(shrinkage cavities)을 형성하며, 이것은 계속해서 소결되어야 한다. 이러한 기공들 또는 결함들은 이어서 소결되는 층 형태의 추후의 연결을 기계적으로 약화시킬 수 있을 뿐만 아니라, 그 전기전도성 및 열전도성에 관해서도 약화될 수 있다.
본 발명은 대류에 의해서가 아니라 적외선(IR radiation (infrared radiation))에 의해 건조(drying) 및 상압소결(pressureless sintering)을 달성하는데 있다.
본 발명에 따르는 방법은 부품들을 연결하기 위한 방법으로서, 이하의 단계들을 포함하며:
(1) 제1 부품의 접촉면에 유기 용매를 함유하는 금속 페이스트를 도포하는 단계(applying a metal paste containing an organic solvent to the contact surface of a first component),
(2) 선택적으로 제1 부품에 연결될 제2 부품의 접촉면에 금속 페이스트를 도포하는 단계(optionally applying the metal paste to the contact surface of a second component to be connected to the first component),
(3) 2개의 부품들과 그 사이에 금속 페이스트의 층을 갖는 샌드위치 배치구조를 형성하는 단계(producing a sandwich arrangement with the two components and a layer of the metal paste in-between),
(4) 2개의 부품들 사이의 금속 페이스트의 층을 건조하는 단계(drying the layer of the metal paste between the two components),
(5) 건조된 금속 페이스트의 층을 포함하는 샌드위치 배치구조를 상압소결하는 단계(pressureless sintering the sandwich arrangement comprising the layer of dried metal paste),
건조 및 상압소결은 750 내지 1500 nm 파장 범위의 피크 파장을 갖는 적외선으로 조사함에 의해 수행되는 것(the drying and the pressureless sintering is performed by irradiation with IR radiation (infrared radiation) with a peak wavelength in the wavelength range of between 750 and 1500 nm)을 특징으로 한다.
본 발명에 따르는 방법은 단계들 (1) 내지 (5)를 포함한다. 이들은 특히 연속적인 단계들이며, 특히 중간 단계들을 갖지 않는 직접적으로 연속적인 단계들이다.
본 발명의 일부로서, 용어 부품(component)는 바람직하게는 개별 부품들을 포함한다. 이들 개별 부품들은 바람직하게는 더 작은 부품들로 나누어질 수 없다.
부품들은 각각 하나의, 선택적으로 또한 복수의 접촉면(contact surface)들을 갖는다. 접촉면들은 일반적으로 예를 들면 금속화층(metallization layer)의 형태의 금속성이다. 부품들의 또는 접촉면들의 금속은 순 금속 또는 금속의 합금일 수 있다. 알루미늄, 구리, 은, 금, 니켈, 팔라듐, 철 및 백금은 금속에 대한 예들이다.
본 발명에 따르는 방법에서 사용되는 부품들의 접촉면은 예를 들면 1 내지 150 ㎟, 특히 20 초과 내지 150 ㎟, 특별히 40 내지 150 ㎟ 범위이다. 본 발명에 따르는 방법은 특별히 또한 큰 접촉면을 포함하는 부품들로 그럼에도 불구하고 합리적으로 짧은 시간의 건조 및 상압소결로, 이에 의해 상술된 유형의 결함들의 형성을 받아들일 필요가 없이 수행될 수 있다는 것은 유리한 점이다.
제1 부품 및 이에 연결될 제2 부품은 동일한 타입일 수 있으며, 즉 이들은 예를 들면 두 경우들에서 기판들(substrates)일 수 있거나, 또는 이들은 각각 능동(active) 또는 수동(passive) 부품들이거나 또는 능동 및 수동 부품일 수 있다. 그러나, 하나의 부품이 기판이고 다른 부품이 능동 또는 수동 부품이거나, 또는 그 역인 것도 또한 가능하다. 기판들, 능동 및 수동 부품들은 특히 전자기기에서 사용되는 부품들이다.
따라서 예를 들면 이하의 실시형태들이 차별화될 수 있다:
제1 부품: 제2 부품:
기판 기판
능동 부품 수동 부품
수동 부품 능동 부품
능동 부품 능동 부품
수동 부품 수동 부품
기판 능동 부품
기판 수동 부품
수동 부품 기판
능동 부품 기판
IMS substrates(insulated metal substrates)(절연금속기판), DCB substrates(direct copper bonded substrates)(직접구리본딩기판), AMB substrates(active metal braze substrates)(능동금속브레이즈기판), ceramic substrates(세라믹 기판), PCBs (printed circuit boards)(인쇄회로기판) 및 leadframes(리드프레임)은 기판들(substrates)의 예들이다.
Diodes(다이오드), LEDs (light emitting diodes)(발광다이오드), dies (semiconductor chips)(다이(반도체칩)), IGBTs (insulated-gate bipolar transistors)(절연게이트쌍극성트랜지스터), ICs (integrated circuits)(집적회로) 및 MOSFETs (metal-oxide-semiconductor field-effect transistors)(금속산화물반도체전계효과트랜지스터)는 능동부품들(active components)의 예들이다.
Sensors(센서), base plates(베이스플레이트), cooling elements(냉각소자), resistors(저항기), capacitors(커패시터) 및 coils(코일)은 수동부품들(passive components)의 예들이다.
유기 용매를 함유하는 금속 페이스트는 본 발명에 따르는 방법의 단계 (1)에서 제1 부품의 접촉면에 도포된다.
유기 용매를 함유하는 금속 페이스트는 흔한 금속 페이스트이며, 이것은 각각 부품들 또는 그 접촉면들 사이의 소결 연결부를 형성하기 위한 수단으로서 당업자에게 공지되며, 또한 금속 소결 페이스트로도 지칭된다. 이러한 금속 페이스트들은 예를 들면 25 내지 90 중량%의 소결 가능한 금속 입자들, 특히 은 입자들, 은 합금 입자들, 구리 입자들 및/또는 구리 합금 입자들; 5 내지 30 중량%의 유기 용매; 0 내지 65 중량%의 금속 전구체 화합물들(금속 전구체들)(metal precursor compounds (metal precursors)), 특히 산화은, 탄산은; 0 내지 5 중량%의 소결 보조제들(sintering aids), 예를 들면 과산화물, 포름산염; 및 0 내지 5 중량%의 다른 첨가물들, 예를 들면 포화지방산 및/또는 예를 들면 에틸셀룰로오스 또는 폴리이미드와 같은 폴리머들을 함유한다.
이러한 금속 페이스트들은 다양한 실시형태들에, 예를 들면 WO 2016/071005 A1, EP 3 009 211 A1, WO 2016/028221 A1, WO 2015/193014 A1, WO 2014/177645 A1, WO 2014/170050 A1, WO 2011/026624 A1, WO 2011/026623 A1, EP 2 572 814 A1, EP 2 425 920 A1, 및 EP 2 158 997 A2에 개시된다.
제1 부품의 접촉면에 대한 금속 페이스트의 도포(application)는 종래의 방법들에 의해, 예를 들면 스크린 프린팅(screen printing), 스텐실 프린팅(stencil printing) 또는 젯팅(jetting)과 같은 프린팅 방법들에 의해 수행될 수 있다. 다른 한편으로, 금속 페이스트의 도포는 또한 디스펜싱 기술(dispensing technology), 핀 트랜스퍼(pin transfer) 또는 디핑(dipping)에 의해서도 수행될 수 있다.
본 발명에 따르는 방법은 선택 단계 (2)를 포함한다. 단계 (2)가 발생하는 경우, 위에서 이미 언급된 바와 같은 금속 페이스트는 또한 제2 부품의 접촉면에 도포된다. 위에서 언급된 도포 방법들은 가능한 도포 방법들이다.
2개의 부품들 및 상기 2개의 부품들 사이에 있는 금속 페이스트를 갖는 샌드위치 배치구조는 단계 (3)에서 형성된다. 이 목적을 위해, 금속 페이스트가 제공된 그 접촉면을 갖는 제1 부품이 선택적으로 금속 페이스트가 또한 제공되는 제2 부품의 접촉면에 부착되거나 또는 제2 부품이 선택적으로 금속 페이스트가 제공되는 그 접촉면이 금속 페이스트가 제공된 제1 부품의 접촉면에 부착된다. 그 결과, 금속 페이스트의 층은 연결될 부품들 사이에 있다.
바람직하게는, 금속 페이스트의 층의 습윤막(wet film) 두께는 20 내지 200 ㎛ 범위이다. 여기서 습윤막 두께는 건조 전에 부품들의 각각 서로를 향하거나 또는 서로 대향 배치되는 접촉면들 사이의 거리로서 이해된다. 습윤막층은 예를 들면 금속 페이스트를 도포하기 위해 선택된 방법에 종속될 수 있다. 스크린 프린팅법에 의해 도포되는 금속 페이스트의 경우, 습윤막 두께는 예를 들면 20 내지 50 ㎛ 범위일 수 있으며, 스텐실 프린팅의 경우 예를 들면 50 내지 200 ㎛ 범위일 수 있으며. 디스펜싱 도포의 경우 예를 들면 20 내지 100 ㎛ 범위일 수 있으며, 젯팅에 의한 도포의 경우 예를 들면 20 내지 70 ㎛ 범위일 수 있다.
본 발명에 따르는 방법의 단계 (4)에서, 2개의 부품들의 접촉면들 사이에 있는 금속 페이스트의 층이 건조된다. 건조 공정에 응하여, 유기 용매가 금속 페이스트에서 제거된다. 바람직한 실시형태에 따르면, 건조된 금속 페이스트 내의 유기 용매의 부분은 금속 페이스트, 즉 도포 준비가 된 금속 페이스트 내의 유기 용매의 최초 부분을 기초로 예를 들면 0 내지 5 중량% 또는 0 내지 < 1 중량%이다. 환언하면, 상기 바람직한 실시형태에 따르는 건조 공정에 응하여 금속 페이스트에 최초 함유된 유기 용매 또는 용매들의 예를 들면 95 내지 100 중량% 또는 99 초과 내지 100 중량%가 제거된다.
건조 단계가 750 내지 1500 nm, 바람직하게는 750 내지 1200 nm 파장 범위의 피크 파장(peak wavelength)을 갖는 적외선으로 조사(irradiation)함에 의해 수행된다. 요구되는 경우, 지원이 대류에 의해 동시에 발생할 수 있지만, 이것은 필요하지도 선호되지도 않는다. 환언하면, 전적으로 750 내지 1500 nm, 바람직하게는 750 내지 1200 nm 파장 범위의 피크 파장을 갖는 적외선으로 조사함에 의해 건조를 가져오는 것이 가능할 뿐만 아니라 또한 바람직하다.
이러한 적외선에 대해 사용될 수 있는 방사원들에 대한 예들은 보통의 NIR 에미터들(near-infrared emitters(근적외선 에미터들))을 포함한다. 이러한 NIR 에미터들은 예를 들면 Heraeus(헤레우스)로부터 구입할 수 있다. NIR 에미터들은 예를 들면 고성능 단파 에미터들이다. 에미터 또는 개별 NIR 에미터들은 예를 들면 15 내지 100 W/cm (센티미터 에미터 길이당 와트) 범위의, 바람직하게는 20 내지 50 W/cm 범위의 출력에서 작동될 수 있다. 이에 의해 NIR 에미터들의 에미터 표면 온도(나권형 필라멘트 온도(spiral-wound filament temperature))는 예를 들면 1800 내지 3000℃ 범위에, 바람직하게는 1850 내지 2500℃ 범위에 놓인다. 적절한 NIR 에미터들은 예를 들면 750 내지 1500 nm, 바람직하게는 750 내지 1200 nm 범위의 최대값을 갖는, 특히 750 내지 1500 nm 또는 750 내지 1200 nm을 갖는 방출 스펙트럼을 갖는다.
적외선 조사(IR irradiation)는 정적으로 또는 패스스루 플랜트에서(statically or in a pass-through plant) 수행될 수 있으며, 이에 의해 부품들 및 그 사이에 있는 건조될 금속 페이스트를 갖는 조사될 샌드위치 배치구조들 및/또는 IR 방사원 또는 방사원들(IR radiation source or sources)은 서로에 대해 이동된다.
부품들 중 하나 또는 양자는 적외선에 대해 투과성이며, 즉 부분적으로 또는 완전히, 본 발명에 따르는 방법의 목적들을 위한 어떤 경우에는 충분히 투과성이다. 환언하면, 부품들 중 적어도 하나는 적외선을 완전히 흡수하지 않는다. 적외선 조사(IR irradiation)는 적외선에 대해 투과성인 부품들 중 하나를 통해 또는 양자를 통해 수행된다. 적외선 조사가 단지 하나의 또는 적외선에 대해 투과성인 상기 하나의 부품을 통해 수행되는 경우가 선호된다. 적외선 조사는 바람직하게는 상단에 배치된 부품을 통해 위로부터 수행된다. 세라믹 기판과 같은 기판, 다이오드, LED, 다이, IGBT, IC, MOSFET와 같은 능동부품들, 그리고 센서, 세라믹 냉각소자, 저항기, 커패시터 및 코일과 같은 수동부품들은 적외선에 대해 투과성인 부품들의 예들이다.
적외선 방사원 사이의 또는 - 보다 정확하게는 - 적외선 방사원 또는 방사원들의 방사 배출 표면과 무가압 방식으로 소결될 금속 페이스트의 층 사이의 거리는 예를 들면 1 내지 50 cm의, 바람직하게는 5 내지 20 cm의 범위에 놓인다.
2개의 부품들의 서로 향하는 접촉면들은 서로 공동 오버랩 표면(joint overlap surface)을 형성한다. 더 작은 접촉면을 포함하는 부품의 접촉면은 이에 의해 일반적으로 완전히 이용되며, 즉 오버랩 표면의 크기는 일반적으로 더 작은 접촉면을 포함하는 부품의 완전한 접촉면의 크기에 대응한다.
예를 들면 1 내지 150 ㎟ 범위의, 2개의 부품들의, 서로를 향하는, 접촉면들로부터 형성된 공동 오버랩 표면의 크기에 의존하면서, 특히 전적으로 적외선 조사에 의해 달성되는 건조 공정은 예를 들면 단지 1 내지 60분 범위의 시간을 필요로 하며 따라서 종래기술에 따르는 상기 언급된 오븐 건조의 경우에서보다 상당히 더 짧다. 오븐 건조와 비교하여 퀄러티 단점들이 발생되지 않는다. 언급된 범위의 로우 엔드(하한부)에서의 작은 오버랩 표면들의 경우, 짧은 건조 기간들이면 충분하며, 큰 오버랩 표면들의 경우, 건조 기간들은 상기 언급된 범위의 어퍼 엔드(상한부)에 있다.
당업자는 건조 또는 건조된 금속 페이스트의 소결 또는 예비 소결이 회피될 수 있도록 단계 (4)를 위한 IR 조사 파라미터들 및/또는 건조 기간을 선택할 수 있다.
건조된 금속 페이스트의 층을 포함하는 샌드위치 배치구조는 본 발명에 따르는 방법의 단계 (5)에서 무가압 방식으로(in a pressureless manner) 소결된다.
단계 (4)에 따르는 건조의 경우에서와 같이, 상압소결(pressureless sintering)이 상기 적외선으로 조사함(irradiation)에 의해 또한 수행된다. 이에 의해 단계들 (4) 및 (5)은, 예를 들면 적외선 조사가 단계 (4)에 따르는 건조 단계의 완료 후 단계 (5)를 위한 중단 없이 계속된다는 점에서, 유리하게는 바로 서로 뒤따른다. 따라서 단계들 (4) 및 (5)는 거의 함께 멜트(융합, 혼합)될 수 있다. 그러나 단계 (4) 및 (5)를 사이에 중단 및 중간 냉각을 갖고 수행하는 것이 또한 가능하다.
상압소결은 750 내지 1500 nm, 바람직하게는 750 내지 1200 nm 파장 범위에서 피크 파장을 갖는 적외선으로 조사함에 의해 수행된다. 요구되는 경우, 지원이 대류(convection)에 의해 동시에 발생할 수 있지만, 이것은 필요하지도 선호되지도 않는다. 환언하면, 건조의 경우에서와 같이, 전적으로 750 내지 1500 nm, 바람직하게는 750 내지 1200 nm 파장 범위에서 피크 파장을 갖는 적외선으로 조사함에 의해 상압소결을 달성하는 것이 가능할 뿐만 아니라 또한 바람직하다.
적외선에 대한 방사원들 및 그 작동 상태들과 관해서는, 건조 단계 (4)와 관하여 위에서 언급된 것들이 참조된다.
건조 단계 (4)의 경우에서와 같이, 적외선 조사(IR irradiation)는 정적으로 또는 패스스루 플랜트에서(statically or in a pass-through plant) 수행될 수 있으며, 이에 의해 부품들 및 그 사이에 있는 무가압 방식으로 소결될 금속 페이스트 및/또는 IR 방사원 또는 방사원들을 갖는 조사될 샌드위치 배치구조들은 서로에 대해 이동된다.
건조 단계 (4)의 경우에서와 같이, 적외선 조사는 적외선에 대해 투과성인 부품들 중 하나를 통해 또는 양 부품들을 통해 수행된다. 적외선 조사가 단지 하나의 또는 적외선에 대해 투과성인 상기 하나의 부품을 통해 수행되는 경우가 선호된다. 적외선 조사는 바람직하게는 상단에 배치된 부품을 통해 위로부터 수행된다.
IR 방사원들 사이의 또는 - 보다 정확하게는 - IR 방사원 또는 방사원들의 방사 배출 표면과 무가압 방식으로 소결될 금속 페이스트의 층 사이의 거리는 예를 들면 1 내지 50 cm의, 바람직하게는 5 내지 20 cm의 범위에 놓인다.
예를 들면 1 내지 150 ㎟ 범위의, 2개의 부품들의, 서로를 향하는, 접촉면들로부터 형성된 공동 오버랩 표면의 크기에 의존하면서, 적외선 조사에 의해 달성되는 상압소결은 예를 들면 단지 15 내지 90분 범위의 시간을 필요로 한다. 오븐에서의 상압소결과 비교하여 퀄러티 단점들이 발생되지 않는다. 언급된 범위의 로우 엔드(하한부)에서의 작은 오버랩 표면들의 경우, 짧은 건조 기간들이면 상압소결을 위해 충분하며, 큰 오버랩 표면들의 경우, 건조 기간들은 상기 언급된 범위의 어퍼 엔드(상한부)에 있다.
단계 (4)뿐만 아니라 단계(5)도 어떤 특별한 제한들을 받지 않는 분위기(atmosphere)에서 수행될 수 있다. 따라서 건조 및 상압소결은 산소를 함유하는 분위기, 예를 들면 공기에서 수행될 수 있다. 예를 들면 구리 또는 니켈 접촉면과 같은 본래 산화 민감성 접촉면을 포함하는 부품들의 경우라도, 아마도 본 발명에 따르는 방법의 결과로서 가능해지는 비교적 짧은 건조 기간의 결과로서 그리고 마찬가지로 상압소결의 짧은 기간의 결과로서, 작동이 산소를 함유하는 분위기에서, 예를 들면 공기에서 수행될 수 있다.
요구되는 경우, 산소가 없는 분위기에서 건조 및 상압소결을 수행하는 것이 또한 가능하다는 것은 말할 필요도 없다. 본 발명의 일부로서, 산소가 없는 분위기(oxygen-free atmosphere)는 그 산소 함량이 100 ppm vol. (ppm by volume) 이하, 바람직하게는 10 ppm vol. 이하, 그리고 훨씬 더 바람직하게는 1 ppm. vol. 이하인 분위기인 것으로 이해될 것이다.
본 발명은 대류에 의해서가 아니라 적외선에 의해 건조 및 상압소결을 달성한다.
요컨대, 부품들을 연결하기 위한 본 발명에 따르는 방법은, 대류로 작동하는 종래기술과 비교하여, 예를 들면 구리 또는 니켈 접촉면과 같은 산화 민감성 접촉면을 포함하는 부품들로 작동하는 경우에도, 품질의 손실 없이 건조 기간 및 상압소결의 기간의 단축, 큰 접촉면을 포함하는 부품들에 또한 상압소결물 접합 기술의 적용 가능성의 확장 및 불활성화(inertization)의 불필요성과 같은 이점들을 갖는다.
실시예들:
참조 실시예 1, 금속 페이스트의 제조: 은 입자들의 85 중량부(코팅된 은 플레이크들(coated silver flakes)의 25:75의 중량 비율의 라우르산/스테아르산 0.6 중량%를 갖는),
Figure pct00001
-테르피네올 7.4 중량부, 이소-트리데칸올 7.4 중량부 및 에틸셀룰로오스 0.2 중량부가 금속 페이스트를 형성하기 위해 혼합되었다.
참조 실시예 2, 실시예 1로부터의 금속 페이스트의 도포 및 샌드위치 배치구조의 형성: 실시예 1로부터의 금속 페이스트가 스텐실 프린팅에 의해 75 ㎛의 습윤막층의 DCB 기판 및 4 mmㆍ4 mm의 표면을 포함하는 전체 표면에 걸쳐 도포되었다. 4 mmㆍ4 mm의 은 접촉면을 포함하는 실리콘 칩은 4 mmㆍ4 mm의 DCB 기판 및 칩의 공동 오버랩 표면을 포함하는 샌드위치 배치구조를 형성함에 의해 이러한 방식으로 도포된 페이스트에 부착되었다.
참조 실시예 3a, 오븐에서 실시예 2로부터의 샌드위치 배치구조의 건조: 실시예 2에 따라서 형성된 샌드위치 배치구조는 (중량 측정에 의해 측정되는) 금속 페이스트에 최초로 함유된 유기 용매를 기초로, 0.5 중량% 미만의 잔여 용매 함량을 제외하고, 150℃ 오븐 온도에서 질소 분위기 하에서 건조되었다. 건조 공정은 60분을 필요로 하였다.
참조 실시예 3b, 적외선 조사 하에서 실시예 2로부터의 샌드위치 배치구조의 건조: 실시예 2에 따라 형성된 샌드위치 배치구조는 길이 30 cm, 출력 30 W/cm, 필라멘트 온도 2009℃의 NIR 에미터(emitter)로, 그리고 1100 nm의 피크 파장으로 공기에서 실리콘 칩의 위로부터 10 cm 거리로부터 조사되었으며, 따라서 (중량 측정에 의해 측정되는) 금속 페이스트에 최초로 함유된 유기 용매를 기초로, 0.5 중량% 미만의 잔여 용매 함량을 제외하고는 유기 용매는 없어졌다. 전적으로 IR 조사에 의해 달성되는 건조 공정은 10분을 필요로 하였다.
비교 실시예 4a, 오븐에서 실시예 3a에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 3a에 따라 형성된 샌드위치 배치구조가 230℃ 오븐 온도에서 60분 동안 무가압 방식으로 질소 분위기 하에서 대류식 오븐(컨벡션 오븐)에서 소결되었다. 냉각 후, 접착력(adhesion)이 전단강도(shear strength)를 통해 측정되었다. 이에 의해 실리콘 칩들이 260 ℃에서 0.3 mm/s의 속도로 시어링 치즐(shearing chisel)에 의해 전단되었다. 힘은 측정 박스에 의해 기록되었다(device DAGE 2000 by DAGE, Germany). 20 N/㎟ 이상의 전단강도들은 만족스러운 결과들을 나타낸다. 측정된 전단강도: 23 N/㎟.
비교 실시예 4b, 오븐에서 실시예 3b에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 3b에 따라 건조된 샌드위치 배치구조가 230℃ 오븐 온도에서 60분 동안 무가압 방식으로 질소 분위기 하에서 대류식 오븐(컨벡션 오븐)에서 소결되었다. 그 다음, 실시예 4a에서와 같이, 접착력이 전단강도를 통해 측정되었다. 측정된 전단강도: 24 N/㎟.
본 발명에 따르는 실시예 4c, 적외선 조사 하에서 실시예 3b에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 3b에 따라 건조된 샌드위치 배치구조는 길이 30 cm, 출력 30 W/cm, 필라멘트 온도 2009℃의 NIR 에미터(emitter)로, 그리고 1100 nm의 피크 파장으로 실리콘 칩의 위로부터 10 cm 거리로부터 20분 동안 조사되었으며, 따라서 실시예 3b로부터의 적외선 조사 공정이 중단 없이 계속되었다는 점에서 무가압 방식으로 소결되었다. 그 다음, 실시예 4a에서와 같이, 접착력이 전단강도를 통해 측정되었다. 측정된 전단강도: 21 N/㎟.
참조 실시예 5, 실시예 1로부터의 금속 페이스트의 도포 및 샌드위치 배치구조의 형성: 실시예 1로부터의 금속 페이스트가 스텐실 프린팅에 의해 75 ㎛의 습윤막층의 DCB 기판 및 5 mmㆍ8 mm의 표면을 포함하는 전체 표면에 걸쳐 도포되었다. 5 mmㆍ8 mm의 은 접촉면을 포함하는 실리콘 칩은 5 mmㆍ8 mm의 DCB 기판 및 칩의 공동 오버랩 표면을 포함하는 샌드위치 배치구조를 형성함에 의해 이러한 방식으로 도포된 페이스트에 부착되었다.
참조 실시예 6a, 오븐에서 실시예 5로부터의 샌드위치 배치구조의 건조: 실시예 5에 따라서 형성된 샌드위치 배치구조는 (중량 측정에 의해 측정되는) 금속 페이스트에 최초로 함유된 유기 용매를 기초로, 0.5 중량% 미만의 잔여 용매 함량을 제외하고, 150℃ 오븐 온도에서 질소 분위기 하에서 건조되었다. 건조 공정은 90분을 필요로 하였다.
참조 실시예 6b, IR 조사 하에 실시예 5로부터의 샌드위치 배치구조의 건조
실시예 5에 따라 형성된 샌드위치 배치구조는 길이 30 cm, 출력 30 W/cm, 필라멘트 온도 2009℃의 NIR 에미터(emitter)로, 그리고 1100 nm의 피크 파장으로 실리콘 칩의 위로부터 공기에서 10 cm 거리로부터 조사되었으며, 따라서 (중량 측정에 의해 측정되는) 금속 페이스트에 최초로 함유된 유기 용매를 기초로, 0.5 중량% 미만의 잔여 용매 함량을 제외하고는 유기 용매는 없어졌다. 전적으로 IR 조사에 의해 달성되는 건조 공정은 20분을 필요로 하였다.
비교 실시예 7a, 오븐에서 실시예 6a에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 6a에 따라 형성된 샌드위치 배치구조가 230℃ 오븐 온도에서 60분 동안 무가압 방식으로 질소 분위기 하에서 대류식 오븐(컨벡션 오븐)에서 소결되었다. 냉각 후, 접착력이 전단강도를 통해 측정되었다. 이에 의해 실리콘 칩들이 260 ℃에서 0.3 mm/s의 속도로 시어링 치즐에 의해 전단되었다. 힘은 측정 박스에 의해 기록되었다(device DAGE 2000 by DAGE, Germany). 측정된 전단강도: 22 N/㎟.
비교 실시예 7b, 오븐에서 실시예 6b에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 6b에 따라 형성된 샌드위치 배치구조가 230℃ 오븐 온도에서 60분 동안 무가압 방식으로 질소 분위기 하에서 대류식 오븐(컨벡션 오븐)에서 소결되었다. 그 다음, 실시예 7a에서와 같이, 접착력이 전단강도를 통해 측정되었다. 측정된 전단강도: 22 N/㎟.
본 발명에 따르는 실시예 7c, 적외선 조사 하에서 실시예 6b에 따라 건조된 샌드위치 배치구조의 상압소결: 실시예 6b에 따라 건조된 샌드위치 배치구조는 길이 30 cm, 출력 30 W/cm, 필라멘트 온도 2009℃의 NIR 에미터(emitter)로, 그리고 1100 nm의 피크 파장으로 실리콘 칩의 위로부터 10 cm 거리로부터 20분 동안 조사되었으며, 따라서 실시예 6b로부터의 적외선 조사 공정이 중단 없이 계속되었다는 점에서 무가압 방식으로 소결되었다. 그 다음, 실시예 7a에서와 같이, 접착력이 전단강도를 통해 측정되었다. 측정된 전단강도: 23 N/㎟.

Claims (14)

  1. 부품들을 연결하기 위한 방법으로서,
    (1) 제1 부품의 접촉면에 유기 용매를 함유하는 금속 페이스트를 도포하는 단계,
    (2) 선택적으로 제1 부품에 연결될 제2 부품의 접촉면에 금속 페이스트를 도포하는 단계,
    (3) 2개의 부품들과 그 사이에 금속 페이스트의 층을 갖는 샌드위치 배치구조를 형성하는 단계,
    (4) 2개의 부품들 사이의 금속 페이스트의 층을 건조하는 단계, 및
    (5) 건조된 금속 페이스트의 층을 포함하는 샌드위치 배치구조를 상압소결하는 단계를 포함하며,
    건조 및 상압소결은 750 내지 1500 nm 파장 범위의 피크 파장을 갖는 적외선으로 조사함에 의해 수행되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  2. 제1항에 있어서,
    부품들의 접촉면은 1 내지 150 ㎟ 범위에 놓이는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  3. 제1항 또는 제2항에 있어서,
    부품들은 기판들, 능동 부품들 및 수동 부품들로 구성되는 그룹으로부터 선택되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  4. 선행하는 항들 중 어느 한 항에 있어서,
    단계 (1)에서 그리고 선택적으로 단계 (2)에서 도포된 금속 페이스트는 25 내지 90 중량%의 소결 가능한 금속 입자들, 5 내지 30 중량%의 유기 용매, 0 내지 65 중량%의 금속 전구체 화합물들, 0 내지 5 중량%의 소결 보조제들, 및 0 내지 5 중량%의 다른 첨가물들을 함유하는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  5. 선행하는 항들 중 어느 한 항에 있어서,
    단계 (4) 동안 금속 페이스트에 최초 함유된 유기 용매 또는 용매들의 95 내지 100 중량%가 제거되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  6. 선행하는 항들 중 어느 한 항에 있어서,
    피크 파장이 750 내지 1200 nm의 파장 범위에 놓이는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  7. 선행하는 항들 중 어느 한 항에 있어서,
    건조 및 상압소결은 각 경우 전적으로 적외선으로 조사함에 의해 달성되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  8. 선행하는 항들 중 어느 한 항에 있어서,
    15 내지 100 W/cm 범위의 출력으로 작동되는 하나 또는 복수의 NIR 에미터(근적외선 에미터)가 적외선에 대한 방사원으로서 사용되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  9. 제8항에 있어서,
    NIR 에미터 또는 에미터들의 에미터 표면 온도는 1800 내지 3000℃ 범위에 놓이는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  10. 선행하는 항들 중 어느 한 항에 있어서,
    부품들 중 하나 또는 양자는 적외선에 대해 투과성인 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  11. 제10항에 있어서,
    적외선 조사는 상단부에 배치되며 적외선에 대해 투과성인 부품을 통해 위로부터 수행되는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  12. 선행하는 항들 중 어느 한 항에 있어서,
    적외선 방사원 또는 방사원들의 방사 배출 표면과 금속 페이스트의 층 사이의 거리는 1 내지 50 cm 범위에 놓이는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  13. 선행하는 항들 중 어느 한 항에 있어서,
    단계 (4) 및 단계 (5)는 산소를 함유하는 분위기에서 또는 산소가 없는 분위기에서 수행되며, 양자의 경우들에서, 부품들 중 하나 또는 양 부품들은 산화 민감성 접촉면을 갖는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
  14. 선행하는 항들 중 어느 한 항에 있어서,
    단계 (4) 및 (5)는 바로 서로 뒤따르는 것을 특징으로 하는 부품들을 연결하기 위한 방법.
KR1020197031081A 2017-05-12 2018-04-20 금속 페이스트에 의해 부품들을 연결하기 위한 방법 KR20190130148A (ko)

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