KR20190109070A - Etching solution composition for silver-containing layer and manufacturing method for an array substrate for display device using the same - Google Patents
Etching solution composition for silver-containing layer and manufacturing method for an array substrate for display device using the same Download PDFInfo
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- KR20190109070A KR20190109070A KR1020180030989A KR20180030989A KR20190109070A KR 20190109070 A KR20190109070 A KR 20190109070A KR 1020180030989 A KR1020180030989 A KR 1020180030989A KR 20180030989 A KR20180030989 A KR 20180030989A KR 20190109070 A KR20190109070 A KR 20190109070A
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- Prior art keywords
- silver
- transparent conductive
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- etching
- conductive film
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- 238000005530 etching Methods 0.000 title claims abstract description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 66
- 239000004332 silver Substances 0.000 title claims abstract description 66
- 239000000203 mixture Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 29
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 86
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 9
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- SUSQOBVLVYHIEX-UHFFFAOYSA-N phenylacetonitrile Chemical compound N#CCC1=CC=CC=C1 SUSQOBVLVYHIEX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- KTPHYLJFAZNALV-UHFFFAOYSA-N 2,3,4-trifluorobenzonitrile Chemical compound FC1=CC=C(C#N)C(F)=C1F KTPHYLJFAZNALV-UHFFFAOYSA-N 0.000 claims description 2
- GKPHNZYMLJPYJJ-UHFFFAOYSA-N 2,3-difluorobenzonitrile Chemical compound FC1=CC=CC(C#N)=C1F GKPHNZYMLJPYJJ-UHFFFAOYSA-N 0.000 claims description 2
- DAVJMKMVLKOQQC-UHFFFAOYSA-N 2-(2-fluorophenyl)acetonitrile Chemical compound FC1=CC=CC=C1CC#N DAVJMKMVLKOQQC-UHFFFAOYSA-N 0.000 claims description 2
- JHQBLYITVCBGTO-UHFFFAOYSA-N 2-(4-fluorophenyl)acetonitrile Chemical compound FC1=CC=C(CC#N)C=C1 JHQBLYITVCBGTO-UHFFFAOYSA-N 0.000 claims description 2
- SNJNVEVAILOJBB-UHFFFAOYSA-N 2-ethoxypropanenitrile Chemical compound CCOC(C)C#N SNJNVEVAILOJBB-UHFFFAOYSA-N 0.000 claims description 2
- GDHXJNRAJRCGMX-UHFFFAOYSA-N 2-fluorobenzonitrile Chemical compound FC1=CC=CC=C1C#N GDHXJNRAJRCGMX-UHFFFAOYSA-N 0.000 claims description 2
- QKPVEISEHYYHRH-UHFFFAOYSA-N 2-methoxyacetonitrile Chemical compound COCC#N QKPVEISEHYYHRH-UHFFFAOYSA-N 0.000 claims description 2
- SFPQDYSOPQHZAQ-UHFFFAOYSA-N 2-methoxypropanenitrile Chemical compound COC(C)C#N SFPQDYSOPQHZAQ-UHFFFAOYSA-N 0.000 claims description 2
- AEKVBBNGWBBYLL-UHFFFAOYSA-N 4-fluorobenzonitrile Chemical compound FC1=CC=C(C#N)C=C1 AEKVBBNGWBBYLL-UHFFFAOYSA-N 0.000 claims description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- -1 Neodynium (Nd) Substances 0.000 claims description 2
- RFFFKMOABOFIDF-UHFFFAOYSA-N Pentanenitrile Chemical compound CCCCC#N RFFFKMOABOFIDF-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- BTGRAWJCKBQKAO-UHFFFAOYSA-N adiponitrile Chemical compound N#CCCCCC#N BTGRAWJCKBQKAO-UHFFFAOYSA-N 0.000 claims description 2
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 claims description 2
- SVPZJHKVRMRREG-UHFFFAOYSA-N cyclopentanecarbonitrile Chemical compound N#CC1CCCC1 SVPZJHKVRMRREG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- SDAXRHHPNYTELL-UHFFFAOYSA-N heptanenitrile Chemical compound CCCCCCC#N SDAXRHHPNYTELL-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- YSIMAPNUZAVQER-UHFFFAOYSA-N octanenitrile Chemical compound CCCCCCCC#N YSIMAPNUZAVQER-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 7
- 241000220259 Raphanus Species 0.000 description 6
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 150000001214 Proactinium Chemical class 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- H01L27/3248—
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- H01L27/3262—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- ing And Chemical Polishing (AREA)
Abstract
Description
본 발명은 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법에 관한 것이다.The present invention relates to a silver-containing thin film etchant composition and a method of manufacturing an array substrate for a display device using the same.
본격적인 정보화시대로 접어들게 됨에 따라 대량의 정보를 처리 및 표시하는 표시장치 분야가 급속도로 발전해 왔으며, 이에 부응하여 다양한 평판 디스플레이가 개발되어 각광받고 있다.As the era of full-scale informatization has entered, the field of display devices for processing and displaying large amounts of information has been rapidly developed. In response, various flat panel displays have been developed and attracted much attention.
이러한 평판 표시장치 장치의 예로는 액정디스플레이장치(Liquid Crystal Display device: LCD), 플라즈마 디스플레이장치(Plasma Display Panel device: PDP), 전계방출디스플레이장치(Field Emission Display device: FED), 유기발광소자(Organic Light Emitting Diodes: OLED) 등을 들 수 있다.Examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), and an organic light emitting device (Organic). Light Emitting Diodes (OLED), etc. may be mentioned.
일례로서, OLED는 소자 자체적으로 빛을 발광하면서 저전압에서도 구동될 수있기 때문에 휴대기기 등의 소형 표시장치 시장에 빠르게 적용되고 있을 뿐만 아니라, 표시장치의 대화면화에 대한 트랜드에 따라 대형 TV 등에의 상용화를 목전에 둔 상황이다. 표시장치가 대화면화 되면서, 배선 등이 길어지게 되어 배선 저항이 증가하게 됨에 따라, 저항을 낮추어 표시장치의 대형화 및 고해상도 실현을 가능하게 하는 방법이 요구되고 있다.As an example, OLEDs can be driven at low voltages while emitting light on their own, so they are rapidly being applied to small display devices such as mobile devices, and commercialized to large TVs according to the trend of large screens of display devices. It is a situation in front of. As the display device becomes larger and the wiring becomes longer and the wiring resistance increases, there is a demand for a method for lowering the resistance to allow the display device to be enlarged and to realize high resolution.
저항 증가에 의한 신호 지연 등의 문제를 해결하기 위해서는, 상기 배선을 최대한 낮은 비저항을 가지는 재료로 형성할 필요가 있다. 그러한 노력의 일환으로 다른 금속들에 비해 낮은 비저항과 높은 휘도, 전도도를 가지고 있는 은(Ag: 비저항 약 1.59μΩ㎝)막, 은합금막 또는 은막이나 은합금막을 포함한 다층막을 컬러필터의 전극, 배선 및 반사막 등에 적용하여 평판 표시장치장치의 대형화와 고해상도 및 저전력 소비 등을 실현하기 위한 노력이 경주되고 있으며, 이러한 재료에 적용하기 위한 식각액이 요구되고 있다.In order to solve a problem such as signal delay due to an increase in resistance, it is necessary to form the wiring with a material having the lowest specific resistance. As part of this effort, silver (Ag: 1.59 μΩcm resistivity) films, silver alloy films, or multilayer films including silver films or silver alloy films, which have lower resistivity, higher brightness, and higher conductivity than other metals, may be used as electrodes, wiring and Efforts have been made to increase the size of flat panel display devices, high resolution, and low power consumption by applying them to reflective films and the like, and etching liquids for such materials are required.
은(Ag) 포함 박막을 이용하는 경우, 이를 패터닝, 식각하기 위해 종래의 식각액을 사용하면 은(Ag)의 재흡착이 증가하여 고해상도 디스플레이 구현이 어려우며, 은이 과도하게 식각되거나 불균질하게 식각되어 배선의 측면 프로파일이 불량하게 된다. In the case of using a thin film containing silver, using a conventional etchant to pattern and etch it increases the resorption of silver (Ag), making it difficult to realize a high resolution display, and the silver is excessively etched or heterogeneously etched to prevent the formation of wiring. The side profile is bad.
대한민국 등록특허공보 제 10-05794241호에는 은 또는 은 합금 배선 및 반사막을 형성하기 위한 인산, 초산, 질산을 포함하는 식각용액이 개시되어 있으나, Pad부에 노출된 데이터 배선(Al 포함하는 배선)에 손상(Damage)을 억제할 수 없는 문제점이 있다. 따라서, 이러한 문제점을 해결할 수 있는 새로운 식각액의 개발이 요구되는 실정이다.Korean Patent Publication No. 10-05794241 discloses an etching solution containing phosphoric acid, acetic acid, and nitric acid for forming silver or silver alloy wirings and a reflective film, but the data wirings (wires including Al) exposed to the pad portion are disclosed. There is a problem that can not suppress the damage (Damage). Therefore, the development of a new etching solution that can solve this problem is required.
본 발명은 은(Ag)을 포함하는 박막에 대해 사용할 수 있으며, Pad부에 노출된 데이터(Data) 배선을 손상시키지 않고 은(Ag)의 재흡착 현상을 억제하며 식각 균일성을 나타낼 수 있는 식각액 조성물을 제공하는 것을 목적으로 한다.The present invention can be used for a thin film containing silver (Ag), an etching solution that can suppress the re-adsorption of silver (Ag) and exhibit an etching uniformity without damaging the data wiring exposed to the pad portion It is an object to provide a composition.
또한, 본 발명은 상기 식각액 조성물을 사용하는 표시 장치의 제조 방법을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a method of manufacturing a display device using the etchant composition.
본 발명은, 식각액 조성물 총 중량에 대하여, 인산 30 내지 60중량%; 질산 1 내지 9중량%; 시안화물 0.1 내지 5중량%; 및 잔량의 물을 포함하는 은 함유 박막의 식각액 조성물을 제공한다.The present invention, 30 to 60% by weight of phosphoric acid based on the total weight of the etching liquid composition; 1-9 weight percent nitric acid; 0.1 to 5 weight percent cyanide; And it provides an etching liquid composition of the silver-containing thin film containing a residual amount of water.
또한, 본 발명은 상기 식각액 조성물을 사용하는 표시 장치용 어레이기판의 제조 방법을 제공한다.In addition, the present invention provides a method of manufacturing an array substrate for a display device using the etchant composition.
본 발명의 식각액 조성물은 은(Ag)을 포함하는 박막, 예를 들어, 은(Ag) 또는 은합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성된 다층막 식각시 우수한 식각특성을 제공할 수 있다.The etchant composition of the present invention can provide excellent etching characteristics when etching a thin film containing silver (Ag), for example, a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and the transparent conductive film. have.
구체적으로, 본 발명의 식각액 조성물은 은(Ag)을 포함하는 박막 식각시에 식각 균일성을 유지하면서 미세 식각을 가능하게 하며, 패드(Pad)부에 노출된 데이터 배선을 손상시키지 않고 은(Ag)의 재흡착 현상을 억제하며, 기판의 상단과 하단의 skew 차이를 감소시킬 수 있다.Specifically, the etchant composition of the present invention enables fine etching while maintaining the etching uniformity during the etching of the thin film containing silver (Ag), and does not damage the data wiring exposed to the pad portion. Resorption of) can be suppressed and skew difference between the top and bottom of the substrate can be reduced.
또한, 본 발명은 상기 식각액 조성물을 사용하는 표시 장치용 어레이기판을 제조 방법을 제공한다.In addition, the present invention provides a method of manufacturing an array substrate for a display device using the etchant composition.
본 발명은, 식각액 조성물 총 중량에 대하여, 인산 30 내지 60중량%; 질산 1 내지 9중량%; 시안화물 0.1 내지 5중량%; 및 잔량의 물을 포함함으로써, 은(Ag)을 포함하는 박막, 예컨데 은(Ag) 또는 은합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성된 다층막 식각시 식각 균일성을 유지하면서 미세 식각을 가능하게 하며, 패드(Pad)부에 노출된 데이터 배선을 손상시키지 않고 은(Ag)의 재흡착 현상을 억제하며, 기판의 상단과 하단의 skew 차이를 감소시킬 수 있는 은 함유 박막의 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법에 관한 것이다.The present invention, 30 to 60% by weight of phosphoric acid based on the total weight of the etching liquid composition; 1-9 weight percent nitric acid; 0.1 to 5 weight percent cyanide; And a residual amount of water, so that a thin film including silver (Ag), for example, a single layer made of silver (Ag) or a silver alloy, and fine etching while maintaining the etching uniformity when etching the multilayer film composed of the single layer and the transparent conductive layer The etching liquid composition of the thin film containing silver which makes it possible to suppress the resorption phenomenon of silver (Ag) without damaging the data wiring exposed to the pad part, and can reduce the skew difference of the top and bottom of a board | substrate. And a method of manufacturing an array substrate for a display device using the same.
이하, 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail.
본 발명에서, 은 함유 박막은 구성 성분 중에 은(Ag)이 포함되는 것으로, 단일막 또는 이중막 이상의 다층막을 포함하는 개념이다. 상기 은(Ag) 함유 박막은 은 또는 은합금의 단일막 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 포함할 수 있으며, 이에 제한되지 않는다.In the present invention, the silver-containing thin film includes silver (Ag) as a constituent and is a concept including a single film or a multilayer film of a double film or more. The silver (Ag) -containing thin film may include a single film of silver or silver alloy or a multilayer film composed of the single film and the transparent conductive film, but is not limited thereto.
본 발명에서, 투명전도막은 산화주석인듐(ITO), 산화아연인듐(IZO), 산화주석아연인듐(ITZO) 및/또는 산화갈륨아연인듐(IGZO)등으로 구성된 군에서 선택되는 1종 이상일 수 있으며, 이에 제한되지 않는다.In the present invention, the transparent conductive film may be at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and / or gallium zinc indium oxide (IGZO) and the like. This is not restrictive.
본 발명에서, 은합금은 은(Ag)을 주성분으로 하여, 니켈(Ni), 구리(Cu), 아연(Zn), 망간(Mn), 크롬(Cr), 주석(Sn), 팔라듐(Pd), 네오디늄(Nd), 니오븀(Nb), 몰리브덴(Mo), 마그네슘(Mg), 텅스텐(W), 프로트악티늄(Pa), 알루미늄(Al) 및 티타늄(Ti)으로부터 선택되는 1종 이상을 포함할 수 있으며, 이에 제한되지 않는다. In the present invention, the silver alloy has silver (Ag) as a main component, nickel (Ni), copper (Cu), zinc (Zn), manganese (Mn), chromium (Cr), tin (Sn), palladium (Pd) And at least one selected from neodymium (Nd), niobium (Nb), molybdenum (Mo), magnesium (Mg), tungsten (W), proactinium (Pa), aluminum (Al) and titanium (Ti). Can be, but is not limited thereto.
본 발명에서, 단일막과 투명전도막으로 구성되는 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막일 수 있으며, 이에 제한되지 않는다. 상기 투명전도막/은합금/투명전도막은 a-ITO/AgX/a-ITO 일 수 있으며, 이에 제한되지 않는다. In the present invention, the multilayer film composed of a single film and a transparent conductive film may be a transparent conductive film / silver, a transparent conductive film / silver alloy, a transparent conductive film / silver / transparent conductive film or a transparent conductive film / silver alloy / transparent conductive film, This is not restrictive. The transparent conductive film / silver alloy / transparent conductive film may be a-ITO / AgX / a-ITO, but is not limited thereto.
본 발명에서, skew 차란 상단부분과 하단부분의 편측식각(Side Etch; S/E) 차이를 의미하며, 상단부분은 식각을 위해 식각장치에 경사진 상태로 투입되는 기판의 상부를 의미하며, 하단부분이란 경사를 이루는 금속막의 끝단부분을 의미한다.In the present invention, the skew difference means a side etch (Side Etch (S / E)) difference between the upper portion and the lower portion, the upper portion means the upper portion of the substrate is inclined to the etching apparatus for etching, The part means the end portion of the metal film which forms the slope.
본 발명의 실시예들에 따른 식각액 조성물은 인산((H3PO4), 질산(HNO3), 시안화물 및 물을 포함하여, 상술한 은 함유 박막 식각시 우수한 식각 특성을 나타낼 수 있다.The etchant composition according to the embodiments of the present invention may include phosphoric acid ((H 3 PO 4 ), nitric acid (HNO 3 ), cyanide, and water, and may exhibit excellent etching characteristics during the above-described silver-containing thin film etching.
본 발명의 식각액 조성물에 포함되는 인산(H3PO4)은 주 해리제로 사용되는 성분으로서, 은(Ag)과 투명전도막을 산화시켜 습식 식각하는 역할을 수행한다. Phosphoric acid (H 3 PO 4 ) included in the etchant composition of the present invention serves as a component used as a main dissociating agent, and performs wet etching by oxidizing silver (Ag) and the transparent conductive film.
상기 인산의 함량은 식각액 조성물 총 중량에 대하여 30 중량% 내지 60 중량%로 포함될 수 있으며, 바람직하게는 30 내지 55 중량% 로 포함될 수 있다. 인산의 함량이 상술한 범위 미만인 경우에는 은의 식각 속도 저하와 식각 프로파일의 불량을 야기시킬 수 있으며 상술한 범위를 초과하는 경우에는 Ag 재흡착 현상이 발생하고, 투명전도막의 식각 속도는 저하되고, 은의 식각 속도는 너무 빨라져 상하부 투명전도막의 팁(Tip)이 발생하게 되어 후속공정에 문제가 되는 불리한 점이 있다. The phosphoric acid content may be included in an amount of 30 wt% to 60 wt%, and preferably 30 to 55 wt%, based on the total weight of the etchant composition. If the content of phosphoric acid is less than the above-mentioned range, the etching rate of silver may be reduced and the etching profile may be defective. If the phosphoric acid content exceeds the above-mentioned range, Ag resorption may occur, and the etching rate of the transparent conductive film may be lowered. Etching speed is too fast to generate a tip of the upper and lower transparent conductive film has a disadvantage in that a problem in the subsequent process.
본 발명의 식각액 조성물에 포함되는 질산(HNO3)은 산화제로 사용되는 성분으로서, 은(Ag)과 투명전도막을 산화시켜 습식 식각하는 역할을 수행한다. 상기 질산의 함량은 식각액 조성물 총 중량에 대하여 1 중량% 내지 9 중량%로 포함될 수 있으며, 바람직하게는 4 내지 7 중량%로 포함될 수 있다. 질산의 함량이 상술한 범위 미만인 경우에는 은(Ag)과 투명전도막 (예컨대, ITO등)의 식각 속도 저하가 발생하며, 이로써 기판내의 식각 균일성(Uniformity)이 불량해지므로 얼룩이 발생할 수 있다. 질산이 상술한 범위를 초과하는 경우에는 상하부 투명전도막의 식각 속도가 가속화 되어 상하부 투명전도막의 언더컷 발생으로 후속 공정에 문제가 발생되는 불리한 점이 있다.Nitric acid (HNO 3 ) included in the etchant composition of the present invention serves as a component used as an oxidant, and wet etching by oxidizing silver (Ag) and the transparent conductive film. The content of nitric acid may be included in an amount of 1% by weight to 9% by weight based on the total weight of the etchant composition, preferably 4 to 7% by weight. When the content of nitric acid is less than the above-mentioned range, the etching rate of silver (Ag) and the transparent conductive film (eg, ITO, etc.) may be lowered. As a result, staining may occur since the uniformity of the substrate is poor. If the nitric acid exceeds the above-mentioned range, there is a disadvantage that the etching speed of the upper and lower transparent conductive films is accelerated, and the undercut of the upper and lower transparent conductive films causes problems in subsequent processes.
본 발명의 식각액 조성물에 포함되는 시안화물은 은(Ag) 리간드로 사용되는 성분으로서, 습식 식각 시 박막에 대한 은(Ag) 재흡착을 감소시키고 또한 균일하게 식각되도록 식각 속도를 조절한다. 상기 시안화물의 함량은 식각액 조성물 총중량에 대하여 0.1 중량% 내지 5 중량%로 포함될 수 있으며, 바람직하게는 1 내지 3 중량%로 포함될 수 있다. 시안화물 함량이 상술한 범위 미만인 경우에는 기판 내에 부분적으로 은 재흡착이 생길 수 있으며, 상술한 범위를 초과하는 경우에는 식각 균일성이 불량해지므로 얼룩이 발생할 수 있다.The cyanide included in the etchant composition of the present invention is a component used as a silver (Ag) ligand, and the etching rate is controlled to reduce the silver (Ag) resorption to the thin film and to etch uniformly during wet etching. The cyanide content may be included in an amount of 0.1 wt% to 5 wt% with respect to the total weight of the etchant composition, and preferably, 1 to 3 wt%. If the cyanide content is less than the above-mentioned range, silver resorption may occur partially in the substrate. If the cyanide content exceeds the above-mentioned range, staining may occur because the etching uniformity is poor.
본 발명의 식각액 조성물에서 사용되는 시안화물은 은(Ag) 리간드로서의 역할을 할 수 있는 것이라면 특별히 제한되지 않으나, 예를 들면, 아크릴로니트릴, 아디포니트릴, 아세토니트릴, 프로피오니트릴, 부티로니트릴, 발레로니트릴, 카프릴로니트릴, 헵탄니트릴, 사이클로펜탄 카르보니트릴, 사이클로헥산 카르보니트릴, 2-플루오로벤조니트릴, 4-플루오로벤조니트릴, 디플루오로벤조니트릴, 트리플루오로벤조니트릴, 페닐아세토니트릴, 2-플루오로페닐아세토니트릴, 4-플루오로페닐아세토니트릴, 메톡시 아세토니트릴, 메톡시 프로피오니트릴 및 에톡시 프로피오니트릴로 이루어진 군으로부터 선택되는 1종 이상일 수 있고, 바람직하게는 아크릴로니트릴일 수 있다.The cyanide used in the etchant composition of the present invention is not particularly limited as long as it can serve as a silver (Ag) ligand. For example, acrylonitrile, adiponitrile, acetonitrile, propionitrile, butyronitrile , Valeronitrile, caprylonitrile, heptanenitrile, cyclopentane carbonitrile, cyclohexane carbonitrile, 2-fluorobenzonitrile, 4-fluorobenzonitrile, difluorobenzonitrile, trifluorobenzonitrile, phenylaceto Nitrile, 2-fluorophenylacetonitrile, 4-fluorophenylacetonitrile, methoxy acetonitrile, methoxy propionitrile and ethoxy propionitrile can be at least one selected from the group consisting of May be ronitrile.
본 발명의 식각액 조성물에서 사용하는 물은 특별히 한정되지 않으나, 예를 들면, 탈이온 증류수 일 수 있다.Water used in the etchant composition of the present invention is not particularly limited, for example, may be deionized distilled water.
상기 물은 식각액 조성물 총 중량이 100중량% 가 되도록 잔량으로 포함될 수 있다.The water may be included as a residual amount such that the total weight of the etchant composition is 100% by weight.
본 발명의 식각액 조성물은 은 또는 은 합금의 단일막 뿐만 아니라, 투명전도막/ 은, 투명전도막/은 합금의 이중막, 투명전도막/은/투명전도막으로 구성되는 3중막에 대해서도 일괄 에칭도 가능하며, 2 단계 에칭 상부 투명전도막을 다른 식각액으로 에칭 후 본 식각액으로 은(은합금) 및 하부 투명전도막을 에칭 가능하며, 3 단계 에칭 즉 상부 투명전도막을 다른 식각액으로 에칭 후 본 식각액으로 은(은합금) 에칭 후 다른 식각액으로 하부 투명전도막을 에칭하는 공정에서도 사용 가능하다.The etching liquid composition of the present invention is batch-etched not only for a single film of silver or silver alloy, but also for a triple film composed of a transparent conductive film / silver, a transparent conductive film / silver alloy double film, and a transparent conductive film / silver / transparent conductive film. It is also possible to etch the silver (silver alloy) and the lower transparent conductive film with the etching solution after etching the two-step etched upper transparent conductive film with another etching liquid, and after the three-step etching, that is, etching the upper transparent conductive film with the other etching solution, (Silver alloy) It can also be used in the process of etching a lower transparent conductive film with another etching liquid after an etching.
표시 장치의 제조 시, 배선, 반사막 및 화소전극으로 사용되는 은(Ag) 또는 은합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성된 다층막에 대해 본 발명의 식각액 조성물을 사용하는 경우, 패턴부의 배선인 알루미늄을 포함하는 은합금 다층막에서 알루미늄을 손상시키지 않고 패턴(Pattern) 부의 배선, 전극 및 반사막에 대한 식각 균일성을 나타내고 Pad부 데이타(Data) 배선의 손상으로부터 발생하는 은(Ag) 재흡착 문제도 개선할 수 있다.When manufacturing the display device, when the etching liquid composition of the present invention is used for a single film made of silver (Ag) or silver alloy used as a wiring, a reflective film and a pixel electrode, and a multilayer film composed of the single film and the transparent conductive film, In the silver alloy multilayer film containing aluminum, which is a negative wiring, silver (Ag) material generated from damage of Pad data data wiring, showing etch uniformity of the wiring, electrodes, and reflective films of the pattern portion without damaging the aluminum. Adsorption problems can also be improved.
본 발명은, a) 기판 상에 게이트 배선을 형성하는 단계; b) 상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계; c) 상기 게이트 절연층 상에 산화물 반도체층을 형성하는 단계; d) 상기 산화물 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및 e) 상기 드레인 전극에 연결된 화소전극 또는 반사막을 형성하는 단계; 를 포함하는 표시장치용 어레이 기판의 제조방법에 있어서, 상기 a)단계 및 e) 단계 중 적어도 어느 한 단계에서는 기판 상에 은(Ag) 함유 박막을 형성하고, 상술한 본 발명의 은 함유 박막의 식각액 조성물로 식각하여 화소전극 또는 반사막을 형성하는 단계를 포함하는 표시장치용 어레이기판의 제조방법을 제공한다. The present invention comprises the steps of: a) forming a gate wiring on a substrate; b) forming a gate insulating layer on the substrate including the gate wiring; c) forming an oxide semiconductor layer on the gate insulating layer; d) forming source and drain electrodes on the oxide semiconductor layer; And e) forming a pixel electrode or a reflective film connected to the drain electrode; A method of manufacturing an array substrate for a display device, the method comprising: forming a silver (Ag) -containing thin film on a substrate in at least one of steps a) and e), and Provided is a method of manufacturing an array substrate for a display device, which includes etching the etching liquid composition to form a pixel electrode or a reflective film.
본 발명에서, 단일막과 투명전도막으로 구성되는 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막일 수 있으며, 이에 제한되지 않는다. 상기 투명전도막/은/투명전도막은 a-ITO/AgX/a-ITO 일 수 있으며, 이에 제한되지 않는다.In the present invention, the multilayer film composed of a single film and a transparent conductive film may be a transparent conductive film / silver, a transparent conductive film / silver alloy, a transparent conductive film / silver / transparent conductive film or a transparent conductive film / silver alloy / transparent conductive film, This is not restrictive. The transparent conductive film / silver / transparent conductive film may be a-ITO / AgX / a-ITO, but is not limited thereto.
본 발명에서, 상술한 제조방법에 의해 제조되는 표시장치용 어레이기판은 유기발광소자용(OLED) 또는 액정표시장치(LCD)용으로 사용될 수 있으며, 이에 제한 되지 않는다.In the present invention, the display device array substrate manufactured by the above-described manufacturing method may be used for an organic light emitting device (OLED) or a liquid crystal display (LCD), but is not limited thereto.
이하, 본 발명을 실시예 및 비교예를 이용하여 더욱 상세하게 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것으로서 본 발명은 하기 실시예에 의해 한정되지 않으며, 다양하게 수정 및 변경될 수 있다. 본 발명의 범위는 후술하는 특허청구범위의 기술적 사상에 의해 정해질 것이다.Hereinafter, the present invention will be described in more detail using examples and comparative examples. However, the following examples are provided to illustrate the present invention, and the present invention is not limited to the following examples and may be variously modified and changed. The scope of the invention will be defined by the technical spirit of the claims below.
<실시예 및 비교예> 은 함유 박막의 식각액 조성물 제조<Examples and Comparative Examples> Preparation of the etchant composition of the silver-containing thin film
하기 표 1에 나타낸 조성 및 함량에 따라 실시예 1 내지 실시예 4 및 비교예 1 내지 비교예 3의 식각액 조성물 150㎏을 제조하였으며, 식각액 조성물 총 중량이 100 중량%가 되도록 잔량의 물을 포함하였다.150 kg of the etchant composition of Examples 1 to 4 and Comparative Examples 1 to 3 were prepared according to the compositions and contents shown in Table 1 below, and the residual amount of water was included so that the total weight of the etchant composition was 100% by weight. .
(아크릴로니트릴)Cyanide
(Acrylonitrile)
<실험 예> Experimental Example
기판 상에 은나노와이어를 오버코트 물질과 함께 도포하고, 그 위에 포토레지스트를 노광, 현상 공정을 통해 패터닝을 한 기판을 다이아몬드 칼을 이용하여 500 X 600mm로 절단하여 시편을 준비하였다.Silver nanowires were applied together with the overcoat material on the substrate, and the specimens were prepared by cutting a substrate, patterned through photoresist on it, and patterning the substrate through a diamond knife to 500 × 600 mm.
상기 실시예 1 내지 4 및 비교예 1 내지 3의 식각액 조성물을 사용하여 하기와 같이 성능 테스트를 진행하였다.The performance test was carried out using the etchant compositions of Examples 1 to 4 and Comparative Examples 1 to 3 as follows.
실험 예 1: skew 차이 평가 Experimental Example 1: Evaluation of skew difference
분사식 식각 방식의 실험장비(모델명: 5.5 ETCHER, 프로웨트 사) 내에 상기 실시예 1 내지 4 및 비교예 1 내지 3의 식각액 조성물을 각각 넣고, 온도를 40℃℃로 설정하여 가온 한 후, 온도가 40±±0.1℃℃에 도달하였을 때 상기 시편의 식각 공정을 수행하였다. 총 식각 시간은 100초로 실시하였다. 기판을 넣고 분사를 시작하여 100초의 식각 시간이 다 되면 꺼내어 탈이온수로 세정한 후, 열풍건조장치를 이용하여 건조하고, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여 식각이 된 후 분석을 진행하였고, 하기의 기준으로 기판의 상단부분과 하단부분의 편측식각(S/E) 차이(즉, skew 차)를 측정하고 평가하였으며, 그 결과를 하기 표 2에 나타내었다. The etching liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 3 were respectively placed in an experimental equipment of a spray etching method (model name: 5.5 ETCHER, Prowet, Inc.), and the temperature was set to 40 ° C., followed by heating. When the specimen reached 40 ±± 0.1 ° C., an etching process of the specimen was performed. Total etching time was 100 seconds. Inserting the substrate and starting spraying, when the etching time of 100 seconds is reached, taken out, washed with deionized water, dried using a hot air dryer, and removed the photoresist using a photoresist stripper (PR stripper). After cleaning and drying, the analysis was performed after etching using an electron scanning microscope (SEM; model name: SU-8010, manufactured by HITACHI), and the unilateral etching of the upper and lower portions of the substrate (S / E) was performed based on the following criteria. ) Difference (ie, skew difference) was measured and evaluated, and the results are shown in Table 2 below.
[상단부분과 하단부분의 편측식각 차이(즉, skew 차이) 기준][Based on the unilateral etching difference (ie skew difference) between the upper part and the lower part]
◎ : 매우 우수 (편측식각(Side Etch) 차이: ≤0.1㎛)◎: Very good (side etch difference: ≤0.1㎛)
○ : 우수 (편측식각(Side Etch) 차이: ≤ 0.15㎛, > 0.1㎛)○: Excellent (Side Etch Difference: ≤ 0.15㎛,> 0.1㎛)
△ : 양호 (편측식각(Side Etch) 차이: ≤ 0.2㎛, > 0.15㎛)△: Good (side etch difference: ≤ 0.2㎛,> 0.15㎛)
Ⅹ : 불량 (편측식각(Side Etch) 차이:> 0.2㎛)불량: defective (side etch difference:> 0.2㎛)
실험 예 2: Ag 재흡착 평가 (패드 부 분석)Experimental Example 2: Ag resorption evaluation (pad part analysis)
분사식 식각 방식의 실험장비(모델명: 5.5 ETCHER, 프로웨트 사) 내에 상기 실시예 1 내지 4 및 비교예 1 내지 3의 식각액 조성물을 각각 넣고, 온도를 40℃℃로 설정하여 가온 한 후, 온도가 40±±0.1℃℃에 도달하였을 때 상기 시편의 식각 공정을 수행하였다. 총 식각 시간은 100초로 실시하였다. 기판을 넣고 분사를 시작하여 100초의 식각 시간이 다 되면 꺼내어 탈이온수로 세정한 후, 열풍건조장치를 이용하여 건조하고, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여 식각이 된 후, 주로 데이터 배선 등 이종 금속이 노출 된 부분이나 굴곡 현상에 의해 마찰이 발생할 수 있는 특정 부위에 식각된 은(Ag)이 흡착되어 있는 현상을 전면 관찰을 통해 분석을 진행하였고, 하기의 기준으로 평가하였으며, 그 결과를 하기 표 2에 나타내었다. The etching liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 3 were respectively placed in an experimental equipment of a spray etching method (model name: 5.5 ETCHER, Prowet, Inc.), and the temperature was set to 40 ° C., followed by heating. When the specimen reached 40 ±± 0.1 ° C., an etching process of the specimen was performed. Total etching time was 100 seconds. Inserting the substrate and starting spraying, when the etching time of 100 seconds is reached, taken out, washed with deionized water, dried using a hot air dryer, and removed the photoresist using a photoresist stripper (PR stripper). After cleaning and drying, after etching using an electron scanning microscope (SEM; model name: SU-8010, manufactured by Hitachi), a specific area where friction may occur due to the exposed portion of different metals such as data wiring or bending The phenomenon in which the silver (Ag) is etched in the adsorption was analyzed through a full observation, evaluated based on the following criteria, the results are shown in Table 2 below.
[Ag 재흡착 평가 기준][Ag resorption evaluation criteria]
◎ : 매우 우수 (50개 이하)◎ very good (50 or less)
○ : 우수 (80개 이하)○: Excellent (80 or less)
△ : 양호 (100개 이하)△: good (100 or less)
Ⅹ : 불량 (100개 이상)불량: Poor (more than 100)
실험 예 3: 알루미늄 손상(Damage) 평가Experimental Example 3: Evaluation of Aluminum Damage
상기 실시예 1 내지 4 및 비교예 1 내지 3의 식각액 조성물로 (알루미늄을 포함하는 은 박막 기재)를 식각하였다. 구체적으로, 분사식 식각 방식의 실험장비 (모델명: Mini ETCHER(TFT), AST社) 내에 제조된 식각액을 넣고 온도를 40로 설정하여 가온한 후, 온도가 40±0.1에 도달하였을 때 식각 공정을 수행하였다. 총 식각 시간은 엔드포인트 검출(End Point Detection, EPD)을 기준으로 하여 오버 에치(Over Etch) 50%를 주어 실시하였다. (Silver thin film base material containing aluminum) was etched with the etching liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 3. Specifically, the etchant prepared in the spray etching experiment equipment (Model name: Mini ETCHER (TFT), AST Co., Ltd.) and the temperature is set to 40 and warmed, and the etching process is performed when the temperature reaches 40 ± 0.1 It was. The total etching time was performed by giving 50% of the over etch based on End Point Detection (EPD).
기판을 넣고 분사를 시작하여 식각이 다 되면 꺼내어 탈이온수로 세정한 후, 에어블로잉을 이용하여 건조하고, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: S-4700, HITACHI사 제조)을 이용하여) 알루미늄 손상을 평가하였다. 평가 기준은 다음과 같으며, 그 결과를 표 2에 나타내었다.The substrates were sprayed and started to be etched, and then removed, washed with deionized water, dried using air blowing, and removed using a photoresist stripper. After washing and drying, the damage of the aluminum was evaluated using an electron scanning microscope (SEM; model name: S-4700, manufactured by Hitachi). Evaluation criteria are as follows, and the results are shown in Table 2.
[알루미늄 Damage 평가 기준][Aluminum Damage Evaluation Criteria]
무: 은 박막에 포함된 알루미늄이 손상되지 않음Zero: Aluminum in silver thin film is not damaged
유: 은 박막에 포함된 알루미늄이 손상됨Oil: Aluminum contained in silver thin film is damaged
상기 표 2에 나타난 바와 같이, 본 발명의 은 함유 박막의 식각액 조성물은 skew 차이, Ag 재흡착, 알루미늄 손상(Damage) 측면에서 모두 우수한 효과를 가짐을 확인하였다.As shown in Table 2, the etching liquid composition of the silver-containing thin film of the present invention was confirmed to have excellent effects in terms of skew difference, Ag resorption, aluminum damage (Damage).
반면, 비교예 1 내지 3의 식각액 조성물의 경우 skew 차이, Ag 재흡착, 알루미늄 손상(Damage) 측면에서 모두 실시예에 비해 효과가 현저히 저하되는 것을 확인하였다. On the other hand, in the case of the etchant composition of Comparative Examples 1 to 3 it was confirmed that the effect is significantly reduced compared to the examples in terms of skew difference, Ag resorption, aluminum damage (Damage).
Claims (8)
인산 30 내지 60중량%;
질산 1 내지 9중량%;
시안화물 0.1 내지 5중량%; 및
잔량의 물을 포함하는, 은 함유 박막의 식각액 조성물.For the total weight of the etchant composition,
30 to 60% by weight phosphoric acid;
1-9 weight percent nitric acid;
0.1 to 5 weight percent cyanide; And
An etching liquid composition of a silver-containing thin film, containing a residual amount of water.
b) 상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계;
c) 상기 게이트 절연층 상에 산화물 반도체층을 형성하는 단계;
d) 상기 산화물 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및
e) 상기 드레인 전극에 연결된 화소전극 또는 반사막을 형성하는 단계; 를 포함하는 표시장치용 어레이 기판의 제조방법에 있어서,
상기 a)단계 및 e) 단계 중 적어도 어느 한 단계에서는 기판 상에 은(Ag) 함유 박막을 형성하고, 청구항 1 의 은 함유 박막의 식각액 조성물로 식각하여 화소전극 또는 반사막을 형성하는 단계를 포함하는, 표시장치용 어레이기판의 제조방법. a) forming a gate wiring on the substrate;
b) forming a gate insulating layer on the substrate including the gate wiring;
c) forming an oxide semiconductor layer on the gate insulating layer;
d) forming source and drain electrodes on the oxide semiconductor layer; And
e) forming a pixel electrode or a reflective film connected to the drain electrode; In the manufacturing method of the array substrate for a display device comprising:
At least one of the steps a) and e) includes forming a silver (Ag) -containing thin film on the substrate and etching the etching liquid composition of the silver-containing thin film of claim 1 to form a pixel electrode or a reflective film. Method of manufacturing array substrate for display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180030989A KR20190109070A (en) | 2018-03-16 | 2018-03-16 | Etching solution composition for silver-containing layer and manufacturing method for an array substrate for display device using the same |
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