CN111155092B - Silver thin film etching solution composition, etching method and metal pattern forming method - Google Patents
Silver thin film etching solution composition, etching method and metal pattern forming method Download PDFInfo
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- CN111155092B CN111155092B CN201911077331.4A CN201911077331A CN111155092B CN 111155092 B CN111155092 B CN 111155092B CN 201911077331 A CN201911077331 A CN 201911077331A CN 111155092 B CN111155092 B CN 111155092B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
Abstract
The present invention provides a silver thin film etching solution composition, an etching method using the same, and a method for forming a metal pattern, wherein the silver thin film etching solution composition comprises (A) nitric acid, (B) at least one selected from the group consisting of iron-based compounds and peroxide oxidants, (C) phosphoric acid, and (D) water, and a Galvanic current value measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as S/D (source/drain) electrodes of an Organic Light Emitting Display (OLED) is 40nA or less using the same as an electrolyte. The present invention provides the following effects: the silver (Ag) re-adsorption problem does not occur even when phosphoric acid is contained as an oxidizing agent, and the etching characteristics are excellent for a single-layer film composed of silver or a silver alloy and a multilayer film composed of the single-layer film and a transparent conductive film.
Description
Technical Field
The present invention relates to a silver thin film etching solution composition, an etching method using the same, and a method for forming a metal pattern.
Background
As the information age is really stepped into, the field of displays that process and display a large amount of information is rapidly developing, and a large number of flat panel displays have been developed and are receiving attention.
Examples of such flat Panel Display devices include Liquid crystal Display devices (LCDs), plasma Display devices (PDPs), field Emission Display devices (FEDs), electroluminescent Display devices (ELDs), and Organic Light Emitting Displays (OLEDs), and such flat Panel Display devices are used not only in the Field of home appliances such as televisions and video recorders, but also in computers such as notebooks, mobile phones, and the like for various applications. These flat panel display devices are rapidly replacing conventional Cathode Ray tubes (NITs) because of their excellent performance such as reduction in thickness and weight and reduction in power consumption.
In particular, since the OLED itself emits light and can be driven even at a low voltage, it has been rapidly applied to the market of small displays such as portable devices in recent years. In addition, the current state of OLEDs is spanning from small displays to commercialization of large TVs.
In addition, although aluminum (Al) reflectors have been mainly used as products in the past, in order to achieve low power consumption by improving brightness, a search has been made for a metal whose material has been changed to a metal with a higher reflectance. Therefore, it is desired to apply a silver (Ag: resistivity of about 1.59 μ Ω cm) film, a silver alloy, or a multilayer film including the same, which has lower resistivity and higher luminance than metal used in a flat panel display device, to an electrode of a color filter, LCD or OLED wiring, and a reflective plate, to realize large-scale, high-resolution, and low power consumption of the flat panel display device, and thus, it is necessary to develop an etching solution for use in the application of the material.
However, silver (Ag) has very poor adhesion (adhesion) to an insulating substrate such as glass or a lower substrate such as a semiconductor substrate made of intrinsic amorphous silicon or doped amorphous silicon, and is not easily vapor-deposited, and tends to induce lift-off (Peeling) or Peeling (Peeling) of wiring. In the case of depositing a silver (Ag) conductive layer on a substrate, an etching solution is used for patterning the conductive layer. When a conventional etching solution is used as such an etching solution, silver (Ag) is excessively etched or unevenly etched, whereby a phenomenon of peeling or peeling of the wiring occurs, and a defect occurs in a side profile of the wiring.
In addition, LOW Skew (LOW Skew) presentation for realizing high resolution has difficulty in terms of process.
In particular, silver (Ag) is a metal which is easily reduced, and etching can be performed without inducing a residue only when the etching rate is high, and in this case, since the etching rate is high and a difference in etching rate does not occur between the upper and lower portions, it is difficult to form a taper angle (taper angle) after etching, and it is difficult to ensure straightness of an etching pattern, there are many limitations in forming wiring and a pattern. Further, when the silver thin film is etched using the silver etchant composition, there occurs a problem that the etched silver particles are re-adsorbed to the metal film of the S/D portion exposed in the substrate, and in this case, an electrical short circuit occurs in a subsequent process, which is problematic in that it causes a failure.
In connection with this, korean laid-open patent No. 10-2008-0009866 relates to a phosphoric acid-based silver etchant composition that requires phosphoric acid as a main oxidant, but when a silver thin film is etched using the phosphoric acid-based silver etchant composition, there are problems such as re-adsorption of silver particles (particles) onto a substrate. Therefore, in fact, it is required to develop a silver etchant composition capable of completely solving the problems of the increase of side etching (Sideetch), the decrease of the performance of the etchant composition due to the increase of residue, re-adsorption of silver, and the increase of the number of processed sheets, which are major problems of the etchant composition containing phosphoric acid.
Documents of the prior art
Patent literature
Patent document 1: korean laid-open patent No. 10-2008-0009866
Disclosure of Invention
Problems to be solved
The present invention has been made to solve the above-mentioned problems of the conventional art, and an object of the present invention is to provide a silver thin film etching solution composition which does not cause a problem of re-adsorption of silver (Ag) even when phosphoric acid is contained as an oxidizing agent, and has excellent etching characteristics for a single layer film made of silver (Ag) or a silver alloy and a multilayer film made of the single layer film and a transparent conductive film.
Another object of the present invention is to provide a silver thin film etching solution composition which can be effectively used for wet etching which exhibits etching uniformity without damaging a lower film.
Another object of the present invention is to provide an etching method using the silver thin film etching solution composition.
Another object of the present invention is to provide a method for forming a metal pattern using the silver thin film etchant composition.
Means for solving the problems
In order to achieve the above object, the present invention provides a silver thin film etching solution composition comprising (a) nitric acid; (B) One or more selected from the group consisting of iron-based compounds and peroxide oxidizing agents; (C) phosphoric acid; and (D) water, wherein a Galvanic current value of Galvanic (Galvanic) measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as S/D (source/drain) electrodes of an Organic Light Emitting Display (OLED) is 40nA or less using the etching solution composition as an electrolyte.
The present invention also provides an etching method using the silver thin film etching solution composition.
The present invention also provides a method for forming a metal pattern using the silver thin film etchant composition.
Effects of the invention
The silver thin film etchant composition of the present invention provides the following effects by limiting a Galvanic value of Galvanic (Galvanic) to 40nA or less: the silver (Ag) re-adsorption problem does not occur even when phosphoric acid is contained as an oxidizing agent, and the film has excellent etching characteristics for a single-layer film composed of silver or a silver alloy and a multilayer film composed of the single-layer film and a transparent conductive film.
In addition, the silver thin film etching solution composition of the present invention can be effectively used for wet etching that exhibits etching uniformity without lower film damage.
Detailed Description
The invention relates to a silver thin film etching liquid composition, an etching method using the same and a method for forming a metal pattern, wherein the silver thin film etching liquid composition comprises (A) nitric acid; (B) One or more selected from the group consisting of iron-based compounds and peroxide oxidizing agents; (C) phosphoric acid; and (D) water, wherein a Galvanic current value of Galvanic (Galvanic) measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as S/D (source/drain) electrodes of an Organic Light Emitting Display (OLED) is 40nA or less using the etching solution composition as an electrolyte.
Conventionally, a phosphoric acid-based etching solution composition has been used for etching a silver thin film, but in the actual situation, when a silver thin film is etched by using an etching solution composition containing phosphoric acid, problems such as re-adsorption of silver particles (particles) formed during etching to a substrate occur, and thus a silver etching solution composition not containing phosphoric acid has been developed.
However, the inventors of the present invention have experimentally confirmed that, when an etchant composition containing nitric acid, at least one selected from the group consisting of an iron-based compound and a peroxide oxidant, phosphoric acid and water satisfies a Galvanic nickel (Galvanic) current value of 40nA or less measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as S/D (source/drain) electrodes of an Organic Light Emitting Display (OLED) using the etchant composition as an electrolytic solution, a silver re-adsorption problem does not occur even when phosphoric acid is contained as an oxidant, a single-layer film composed of silver or a silver alloy and a multi-layer film composed of the single-layer film and a transparent conductive film have excellent etching characteristics, that is, a good undercut (Side etch), and a performance degradation problem of the etchant composition due to an increase in the number of processed sheets does not occur, thereby completing the present invention.
In addition, the silver thin film etching solution composition of the present invention can be effectively used for wet etching that exhibits etching uniformity without lower film damage.
On the other hand, the silver reabsorption may refer to a phenomenon in which silver particles after etching adhere to a metal film of an S/D portion exposed in the substrate, and the metal film of the S/D portion exposed in the substrate may be Ti/Al/Ti, ti/Cu/Ti, mo/Cu/Mo, moTi/Cu/MoTi, moNb/Cu/MoNb, or the like, and particularly, may be reabsorption of silver into Ti on an upper portion of a Ti/Al/Ti triple-layer film.
The galvanic current can be measured by a Zero Resistance Amperometric (ZRA) method. The galvanic current value can be confirmed by measuring the current flowing between the aluminum (Al) electrode and the titanium (Ti) electrode in a Cell Off state with no voltage or current applied thereto using the etching liquid composition of the present invention as an electrolyte.
The galvanic value of the silver thin film etching solution composition of the present invention measured by the above method is 40nA or less, and preferably 5 to 40nA. When the range of the galvanic current value is satisfied, re-adsorption of silver can be prevented during etching of the silver thin film, which is preferable. The aluminum (Al) electrode and the titanium (Ti) electrode described above may be used as S/D (source/drain) electrodes of an Organic Light Emitting Display (OLED).
The silver thin film etching solution composition of the present invention, and the etching method and the metal pattern forming method using the same can be characterized in that the single layer film and the multilayer film can be etched at the same time.
The silver alloy may be In the form of an alloy containing silver as a main component and other metals such as Nd, cu, pd, nb, ni, mo, ni, cr, mg, W, pa, in, zn, sn, al, and Ti; and silver nitrides, silicides, carbides, oxides, and the like, but are not limited thereto.
The transparent conductive film may include one or more selected from the group consisting of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), indium Tin Zinc Oxide (ITZO), and Indium Gallium Zinc Oxide (IGZO).
The above-mentioned multilayer film may include a multilayer film formed in a manner of transparent conductive film/silver, transparent conductive film/silver alloy, transparent conductive film/silver/transparent conductive film, or transparent conductive film/silver alloy/transparent conductive film.
The silver thin film etchant composition, the etching method using the same, and the method for forming a metal pattern according to the present invention can be used for formation of an OLED TFT array substrate for a reflective film, a lead (trace) wiring for a touch screen panel, or a nanowire (nanowire) wiring, but are not limited thereto, and can be used for an electronic component material including the single layer film and the multilayer film.
< silver thin film etching solution composition >
The etching solution composition of the present invention comprises (a) nitric acid, (B) at least one selected from the group consisting of iron-based compounds and peroxide oxidizing agents, and (C) phosphoric acid, and may comprise (D) water as a solvent.
(A) Nitric acid
The nitric acid contained in the silver thin film etching solution composition of the present invention is used to oxidize the silver thin film and/or the transparent conductive film, and plays a role in determining the etching rate of the silver thin film and/or the transparent conductive film and adjusting the etching rate so as to enable uniform etching.
(B) One or more selected from the group consisting of iron-based compounds and peroxide oxidizing agents
The silver thin film etching solution composition of the present invention may include one or more selected from the group consisting of an iron-based compound and a peroxide oxidizer. The iron-based compound and the peroxide oxidizing agent are used as an etchant for the transparent conductive film, and prevent the occurrence of defects due to the re-adsorption of silver. Further, the iron-based compound has little damage to aluminum used for the S/D electrode, can prevent silver reabsorption due to the galvanic phenomenon, can reduce silver reabsorption due to the advantage of strong oxidizing ability, and is excellent in etching uniformity, and therefore, the iron-based compound is preferably used from the viewpoint of preventing silver reabsorption, etching uniformity, and the like.
More specifically, the iron-based compound may be selected from the group consisting of ferrous nitrate (Fe (NO) 3 ) 2 ) Iron nitrate (Fe (NO) 3 ) 3 ) Ferrous sulfate (FeSO) 4 ) And iron (Fe 2 (SO) sulfate 4 ) 3 ) Preferably, iron nitrate may be used.
However, the iron-based compound contains iron chloride (FeCl) 3 ) Such a chlorine compound (i.e., chloride ion) causes a problem of silver deposition when etching a silver thin film. Therefore, in the present invention, the iron-based compound preferably does not contain FeCl 3 And the like.
The above peroxide oxidizing agent may more specifically be one or more selected from the group consisting of hydrogen peroxide, OXONE (OXONE), and persulfate.
The persulfate may be specifically one or more selected from the group consisting of sodium persulfate, potassium persulfate, and ammonium persulfate, and preferably ammonium persulfate may be used.
(C) Phosphoric acid
The phosphoric acid contained in the silver thin film etching solution composition of the present invention acts as a chelating agent for silver to cause an etching reaction, thereby preventing the re-adsorption of silver ions onto the surface of the substrate.
(D) Water (W)
The water contained in the silver thin film etching solution composition of the present invention may be deionized water for a semiconductor process, and preferably the deionized water is 18M Ω/cm or more.
In the present invention, the content of water may be the balance, and the balance means the balance to make the total weight of the composition of the present invention containing the essential components and other components than the essential components 100 wt%.
On the other hand, when the silver thin film etching solution composition of the present invention contains acetic acid, a problem of lowering the stability of the etching solution composition with time may be caused. Therefore, the silver thin film etching solution composition of the present invention preferably does not contain acetic acid.
< etching method Using silver thin film etching solution composition >
The present invention also provides an etching method using the silver thin film etchant composition of the present invention. The etching method of the present invention can form a pattern according to a known metal etching method, except for using the silver thin film etchant composition of the present invention.
As an example, the etching method includes: i) Forming a single-layer film made of silver or a silver alloy or a multilayer film made of the single-layer film and a transparent conductive film on a substrate; ii) a step of selectively leaving a photoreactive material on the single layer film or the multilayer film; and iii) a step of etching the single-layer film or the multi-layer film using the silver thin film etching solution composition of the present invention.
< method for Forming Metal Pattern Using silver thin film etching solution composition >
The present invention also provides a method for forming a metal pattern using the silver thin film etchant composition of the present invention. The method for forming a metal pattern according to the present invention can form a pattern according to a known method for forming a metal pattern, except for using the silver thin film etchant composition of the present invention.
As an example, the method of forming the metal pattern includes: i) Forming a single-layer film made of silver or a silver alloy or a multilayer film made of the single-layer film and a transparent conductive film on a substrate; ii) a step of etching the single-layer film or the multilayer film using the silver thin film etching solution composition of the present invention.
The present invention will be described in more detail below with reference to examples. However, the following examples are intended to explain the present invention more specifically, and the scope of the present invention is not limited to the following examples. The scope of the present invention is shown in the claims, and includes all modifications equivalent in meaning and scope to the description of the claims. In the following examples and comparative examples, "%" and "part(s)" representing the content are based on mass unless otherwise mentioned.
Examples and comparative examples: preparation of silver thin film etching solution composition
The silver thin film etching solution compositions of examples 1 to 7 and comparative examples 1 to 4 were manufactured according to the compositions shown in table 1 below, and the balance of water was included so as to be 100 wt%.
[ Table 1]
Test examples
1. Galvanic (Galvanic) determination
The galvanic current was measured by the ZRA (zero internal resistance amperometric) method. After the electrodes were set using the silver etchant compositions of examples 1 to 7 and comparative examples 1 to 6 as an electrolyte, the current flowing between the following electrode 1 and electrode 2 was measured while being connected to a cable in a Cell Off state where no voltage or current was applied.
The electrodes 1: titanium (Ti) electrode
-an electrode 2: aluminum (Al) electrode
2. Evaluation of silver Re-adsorption
After an ITO (indium tin oxide)/silver/ITO three-layer film is formed on a substrate, a photoresist is patterned on the three-layer film. The silver thin film etching liquid compositions of examples 1 to 7 and comparative examples 1 to 6 were put into a spray etching type test apparatus (model name: ETCHER (TFT), SEMES Co.), and the temperature was raised to 40 ℃ and then the etching process of the test piece was performed when the temperature reached 40. + -. 0.1 ℃. The total etch time was 85 seconds. The substrate was placed in the chamber and the substrate was sprayed, and if the etching time reached 85 seconds, the substrate was taken out and washed with deionized water, and then dried by a hot air drying apparatus. The number of silver particles adsorbed to the upper Ti of the Ti/Al/Ti triple-layer film exposed in the substrate in the etching step was measured, and the results are shown in table 2, which were evaluated according to the following criteria.
< evaluation criteria for silver Re-adsorption >
Good: less than 5
The method comprises the following steps: more than 5 and less than 50
Poor results: more than 50
3. Evaluation of stability with time
The silver thin film etching solution compositions of examples 1 to 7 and comparative examples 1 to 6 were placed in a spray etching system test apparatus (model name: ETCHER (TFT), SEMES Co., ltd.), the temperature was set to 40 ℃ and the temperature was raised, and then the spray etching system apparatus was started to continuously circulate the etching solution in the spray etching system apparatus when the temperature reached 40. + -. 0.1 ℃. The etching step of the test piece was carried out at 0 hour (Reference) at 40. + -. 0.1 ℃ and after 12 hours. The total etch time was 85 seconds. The substrate was placed in the chamber and the substrate was sprayed, and if the etching time reached 85 seconds, the substrate was taken out and washed with deionized water, and then dried by a hot air drying apparatus. After cleaning and drying, the substrate was cut, and the Side Etch (Side Etch) (the distance between the photoresist and the etched metal film) was measured for the cross section by a scanning electron microscope (SEM; model name: SU-8010, HITACHI). The amount of change in undercut at 0 hour (control) and 12 hours was evaluated according to the following criteria, and the results are shown in table 2 below.
< evaluation criteria for stability with time >
Good: the etching variation (S/E) is less than or equal to 0.10 mu m
The method comprises the following steps: 0.10 μm < etching variation (S/E) less than or equal to 0.20 μm
Poor: 0.20 μm < etching variation (S/E)
[ Table 2]
| Galvanic current (nA) | Re-adsorption of Ag | Stability over time | |
| Example 1 | 20 | Is good | Good effect |
| Example 2 | 30 | General | Good effect |
| Example 3 | 25 | General | Is good |
| Example 4 | 34 | General | Good effect |
| Example 5 | 25 | Good effect | Good effect |
| Example 6 | 30 | Is good | Good effect |
| Example 7 | 40 | Good effect | Good effect |
| Comparative example 1 | 41 | Failure of the product | Good effect |
| Comparative example 2 | 234 | Failure to meet the requirements | Good effect |
| Comparative example 3 | 154 | Failure of the product | Is good |
| Comparison ofExample 4 | 262 | Failure of the product | Is good |
| Comparative example 5 | 20 | Failure to meet the requirements | Good effect |
| Comparative example 6 | 28 | Good effect | Failure to meet the requirements |
Referring to table 2 above, it was confirmed that the silver re-adsorption characteristics were excellent in examples 1 to 7 having a galvanic current value of 40nA or less, while the silver re-adsorption characteristics were poor in comparative examples 1 to 4 having a galvanic current value of more than 40nA.
In addition, the iron chloride (FeCl) is contained 3 ) In the case of comparative example 5, which is an iron-based compound, it was confirmed that the silver re-adsorption property was poor although the galvanic current value was 40nA or less. This is considered to be because of chloride ions (Cl) contained in ferric chloride - ) Resulting in the precipitation of silver as silver chloride (AgCl).
In addition, in the case of comparative example 6 containing acetic acid, it was confirmed that the galvanic current value was 40nA or less, the silver re-adsorption property was also good, but the stability property with time was poor.
Claims (9)
1. A silver thin film etching solution composition, comprising:
(A) Nitric acid;
(B) One or more selected from the group consisting of iron-based compounds and peroxide oxidizing agents;
(C) Phosphoric acid; and
(D) The amount of water is controlled by the amount of water,
the iron-based compound does not contain a chlorine compound,
the silver thin film etching solution composition does not contain acetic acid,
a galvanic current value measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as S/D, i.e., source/drain electrodes of an organic light emitting display OLED using the etching solution composition as an electrolyte is 40nA or less.
2. The silver thin film etchant composition according to claim 1, wherein the iron-based compound is one or more selected from the group consisting of ferrous nitrate, ferric nitrate, ferrous sulfate, and ferric sulfate.
3. The silver thin film etchant composition according to claim 1, wherein the peroxide oxidizer is one or more selected from the group consisting of hydrogen peroxide, oxone, and persulfate salts.
4. The silver thin film etching solution composition according to claim 3, wherein the persulfate comprises one or more selected from the group consisting of sodium persulfate, potassium persulfate and ammonium persulfate.
5. The silver thin film etching solution composition according to claim 1, wherein the silver thin film etching solution composition is capable of simultaneously etching a single-layer film composed of silver or a silver alloy, or a multilayer film composed of the single-layer film and a transparent conductive film.
6. The silver thin film etching solution composition according to claim 5, wherein the transparent conductive film is one or more selected from the group consisting of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), indium Tin Zinc Oxide (ITZO), and Indium Gallium Zinc Oxide (IGZO).
7. The silver thin film etchant composition according to claim 5, wherein the multilayer film comprises a multilayer film formed of a transparent conductive film/silver, a transparent conductive film/silver alloy, a transparent conductive film/silver/transparent conductive film, or a transparent conductive film/silver alloy/transparent conductive film.
8. An etching method, comprising:
forming a single-layer film made of silver or a silver alloy or a multilayer film made of the single-layer film and a transparent conductive film on a substrate;
a step of selectively leaving a photoreactive material on the single-layer film or the multilayer film; and
etching the single-layer film or the multilayer film using the silver thin film etching solution composition according to any one of claims 1 to 7.
9. A method of forming a metal pattern, comprising:
forming a single-layer film made of silver or a silver alloy or a multilayer film made of the single-layer film and a transparent conductive film on a substrate; and
etching the single-layer film or the multilayer film using the silver thin film etching solution composition according to any one of claims 1 to 7.
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| KR1020190123064A KR20200053400A (en) | 2018-11-08 | 2019-10-04 | Etchant composition for silver thin layer, etching method and method for fabrication metal pattern using the same |
| KR10-2019-0123064 | 2019-10-04 |
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| CN103911616A (en) * | 2012-12-31 | 2014-07-09 | 东友Fine-Chem股份有限公司 | Etching agent composition, method for forming matal pattern, and method for manufacturing array substrate |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN105755472A (en) * | 2015-01-05 | 2016-07-13 | 东友精细化工有限公司 | Silver etchant composition and display substrate using the same |
| CN105951101A (en) * | 2015-03-09 | 2016-09-21 | 东友精细化工有限公司 | Etching solution composition for silver-containing film and manufacturing method of an array substrate for display device using the same |
| CN107419270A (en) * | 2016-05-23 | 2017-12-01 | 东友精细化工有限公司 | Etchant containing Ag films and utilize its display base plate |
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