KR20180120248A - Phase change material - Google Patents

Phase change material Download PDF

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KR20180120248A
KR20180120248A KR1020187029072A KR20187029072A KR20180120248A KR 20180120248 A KR20180120248 A KR 20180120248A KR 1020187029072 A KR1020187029072 A KR 1020187029072A KR 20187029072 A KR20187029072 A KR 20187029072A KR 20180120248 A KR20180120248 A KR 20180120248A
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weight
thermally conductive
microns
micron
thermal interface
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KR102554661B1 (en
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브라이트 장
웨이 준 왕
야 췬 리우
홍 민 황
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허니웰 인터내셔널 인코포레이티드
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Abstract

열 계면 물질은, 일 예시적인 구현으로, 적어도 하나의 폴리머, 적어도 하나의 상 변화 물질, 적어도 하나의 가교제 및 적어도 하나의 열 전도성 충전제를 포함한다. 적어도 하나의 열 전도성은 약 1미크론 이하의 입자 직경을 갖는 제1 복수의 입자를 포함한다. 적어도 하나의 열 전도성 충전제는 열 계면 물질의 총 중량의 적어도 80중량%로 포함된다. 열 계면 물질을 형성하기 위한 제형 및 열 계면 물질을 포함하는 전자 부품이 또한 제공된다.The thermal interface material, in one exemplary implementation, comprises at least one polymer, at least one phase change material, at least one crosslinker, and at least one thermally conductive filler. The at least one thermal conductivity comprises a first plurality of particles having a particle diameter of about 1 micron or less. The at least one thermally conductive filler comprises at least 80 wt% of the total weight of the thermal interface material. An electronic component comprising a formulation for forming a thermal interface material and a thermal interface material is also provided.

Description

상 변화 물질Phase change material

본 발명은 일반적으로 열 계면 물질에 관한 것으로, 보다 상세하게는 상 변화 물질을 포함하는 열 계면 물질에 관한 것이다.FIELD OF THE INVENTION The present invention relates generally to thermal interface materials, and more particularly to a thermal interface material comprising a phase change material.

열 계면 물질은 중앙 처리 장치, 비디오 그래픽 어레이, 서버, 게임 콘솔, 스마트폰, LED 보드 등과 같은 전자 부품으로부터 열을 소멸시키기 위해 널리 사용된다. 열 계면 물질은 전형적으로 전자 부품에서 열 확산기로 과도한 열을 전달한 다음, 열을 열 싱크에 전달하는 데 사용된다.Thermal interface materials are widely used to dissipate heat from electronic components such as central processing units, video graphics arrays, servers, game consoles, smart phones, LED boards, and the like. Thermal interface materials are typically used to transfer excessive heat from an electronic component to a heat spreader, and then to transfer heat to the heat sink.

도 1은 실리콘 다이(12), 인쇄 회로 기판(14), 및 인쇄 회로 기판(14) 상의 복수의 플립칩 접합부(16)를 포함하는 전자 칩(10)을 개략적으로 나타낸다. 전자 칩(10)은 예시적으로 하나 이상의 제1 열 계면 물질(TIM)(22)에 의해 열 확산기(18) 및 열 싱크(20)에 연결된다. 도 1에 나타낸 바와 같이, 제1 TIM(22A)은 열 싱크(20)와 열 확산기(18)를 연결하고, 제2 TIM(22B)은 열 확산기(18)와 전자칩(10)의 실리콘 다이(12)를 연결한다. 열 계면 물질(22A, 22B) 중 하나 또는 둘 모두는 후술하는 열 계면 물질일 수 있다.1 schematically depicts an electronic chip 10 including a silicon die 12, a printed circuit board 14 and a plurality of flip chip junctions 16 on a printed circuit board 14. As shown in FIG. Electronic chip 10 is illustratively connected to heat spreader 18 and heat sink 20 by one or more first thermal interface materials (TIM) 1, the first TIM 22A connects the heat sink 20 and the heat spreader 18 and the second TIM 22B connects the heat spreader 18 and the silicon die 10 of the electronic chip 10. [ (12). One or both of the thermal interface materials 22A, 22B may be a thermal interface material described below.

TIM(22A)은 TIM(2)으로 지정되고, TIM(22A)의 제1 표면이 열 확산기(18)의 표면과 접촉하고 TIM(22A)의 제2 표면은 열 싱크(20)의 표면과 접촉하도록 열 확산기(18)와 열 싱크(20) 사이에 위치한다. The TIM 22A is designated as the TIM 2 and the first surface of the TIM 22A contacts the surface of the heat spreader 18 and the second surface of the TIM 22A contacts the surface of the heat sink 20 And between the heat spreader 18 and the heat sink.

TIM(22B)은 TIM(1)으로 지정되고, TIM(22B)의 제1 표면이 실리콘 다이(12)의 표면과 같은 전자 칩(34)의 표면과 접촉하고 TIM(22B)의 제2 표면은 열 확산기(18)의 표면과 접촉하도록 전자 칩(10)과 열 확산기(18) 사이에 위치한다.The TIM 22B is designated as the TIM 1 and the first surface of the TIM 22B contacts the surface of the electronic chip 34 such as the surface of the silicon die 12 and the second surface of the TIM 22B Is positioned between the electronic chip (10) and the heat spreader (18) to contact the surface of the heat spreader (18).

일부 구현으로(도시되지 않음), TIM(22)은 TIM(1.5)으로 지정되고, TIM(22)의 제1 표면이 실리콘 다이(12)의 표면과 같은 전자 칩(10)의 표면과 접촉하고 TIM(2)의 제2 표면은 열 싱크(22)의 표면과 접촉하도록 전자 칩(10)과 열 싱크(20) 사이에 위치한다.In some implementations (not shown), the TIM 22 is designated as TIM 1.5 and the first surface of the TIM 22 contacts the surface of the electronic chip 10, such as the surface of the silicon die 12 The second surface of the TIM 2 is positioned between the electronic chip 10 and the heat sink 20 to contact the surface of the heat sink 22.

열 계면 물질은 열 그리스(thermal grease), 그리스-유사(grease-like) 물질, 엘라스토머 테이프 및 상 변화 물질을 포함한다. 전통적인 열 계면 물질에는 갭 패드 및 열 패드와 같은 부품이 포함된다. 예시적인 열 계면 물질은 CN 103254647, CN 103254647, JP 0543116, U.S. 6,238,596, U.S. 6,451,422, U.S. 6,500,891, U.S. 6,605,238, U.S. 6,673,434, U.S. 6,706,219, U.S. 6,797,382, U.S. 6,811,725, U.S. 6,874,573, U.S. 7,172,711, U.S. 7,147,367, U.S. 7,244,491, U.S. 7,867,609, U.S. 8,324,313, U.S. 8,586,650, U.S. 2005/0072334, U.S. 2007/0051773, U.S. 2007/0179232, U.S. 2008/0044670, U.S. 2009/0111925, U.S. 2010/0048438, U.S. 2010/0129648, U.S. 2011/0308782, US 2013/0248163, WO 2008/121491, 및 PCT/CN2014/093138에 개시되어 있다.Thermal interface materials include thermal grease, grease-like materials, elastomeric tapes and phase change materials. Conventional thermal interface materials include components such as gap pads and thermal pads. Exemplary thermal interface materials include CN 103254647, CN 103254647, JP 0543116, U.S. Pat. 6,238,596, U.S. Pat. 6,451,422, U.S. Pat. 6,500,891, U.S. Pat. 6,605,238, U.S. Pat. 6,673,434, U.S. Pat. No. 6,706,219, U.S. Pat. 6,797,382, U.S. Pat. 6,811,725, U.S. Pat. 6,874,573, U.S. Pat. No. 7,172,711, U.S. Pat. 7,147,367, U.S. Pat. No. 7,244,491, U.S. Pat. 7,867,609, U.S. Pat. 8,324,313, U.S. Pat. 8,586,650, U.S. Pat. 2005/0072334, U.S. Pat. 2007/0051773, U.S.A. 2007/0179232, U.S.A. 2008/0044670, U.S.A. 2009/0111925, U.S.A. 2010/0048438, U.S.A. 2010/0129648, U.S.A. 2011/0308782, US 2013/0248163, WO 2008/121491, and PCT / CN2014 / 093138.

열 그리스 및 상 변화 물질은, 매우 얇은 층에서 확산되고 인접한 표면들 사이에 밀착 접촉을 제공하는 능력 때문에 다른 유형의 열 계면 물질보다 낮은 열 저항을 갖는다. 그러나, 일부 상황에서, 전자 칩(10) 및 열 싱크(20) 및/또는 열 확산기(18)는 도 2에 도시된 바와 같이 수직 배향으로 배치된다. 이러한 수직 배향에서, 에어 갭(24)은 TIM이 보다 낮은 하단에 지지되지 않도록 TIM(22A) 및/또는 TIM(22B) 바로 아래에 위치한다. 보다 높은 온도에서, TIM(22A, 22B)과 같은 열 계면 물질은 에어 갭(24)을 통해 그리고 전자 부품의 다른 부분 상으로 계면으로부터 떨어질 수 있다.Thermal grease and phase change materials have a lower thermal resistance than other types of thermal interface materials because of their ability to diffuse in very thin layers and to provide close contact between adjacent surfaces. However, in some situations, the electronic chip 10 and the heat sink 20 and / or the heat spreader 18 are arranged in a vertical orientation as shown in Fig. In this vertical orientation, the air gap 24 is positioned directly below the TIM 22A and / or the TIM 22B such that the TIM is not supported at the lower lower end. At higher temperatures, thermal interface materials, such as TIMs 22A and 22B, may fall from the interface through the air gap 24 and onto other portions of the electronic component.

상술한 바와 같은 개선이 요구된다.An improvement as described above is required.

본 발명은 예를 들어, 컴퓨터 칩과 같은 열을 발생시키는 전자 장치로부터 열 확산기 및 열 싱크와 같은 열 방산 구조물(heat dissipating structures)로 열을 전달하는 데 유용한 열 계면 물질을 제공한다. 열 계면 물질은 예시적으로 적어도 하나의 상 변화 물질, 적어도 하나의 폴리머 매트릭스 물질, 하나 이상의 열 전도성 충전제 및 적어도 하나의 가교제를 포함하며, 열 전도성 충전제는 열 계면 물질의 총 중량의 적어도 80중량%로 포함되며, 그리고 열 전도성 충전제는 1 미크론 미만의 입자 직경을 갖는 제1 복수의 입자를 포함한다. 보다 구체적인 구현으로, 열 전도성 충전제는 열 계면 물질의 총 중량의 적어도 90중량%, 91중량%, 92중량%, 93중량 % 또는 95중량%로 포함된다.The present invention provides a thermal interface material useful for transferring heat from an electronic device generating heat, such as, for example, a computer chip, to heat dissipating structures such as heat spreaders and heat sinks. The thermal interface material will illustratively include at least one phase change material, at least one polymer matrix material, at least one thermally conductive filler, and at least one crosslinker, wherein the thermally conductive filler comprises at least 80 wt% And the thermally conductive filler comprises a first plurality of particles having a particle diameter of less than 1 micron. In a more specific embodiment, the thermally conductive filler comprises at least 90 wt%, 91 wt%, 92 wt%, 93 wt%, or 95 wt% of the total weight of the thermal interface material.

상기 구현 중 어느 하나 이상의 특정 구현에서, 열 계면 물질은 1 중량% 내지 16중량%의 적어도 하나의 폴리머 매트릭스 물질; 0.5중량% 내지 8중량%의 적어도 하나의 상 변화 물질; 및 0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제를 포함한다. 보다 특정한 구현에서, 열 계면 물질은 1중량% 내지 8중량%의 적어도 하나의 폴리머 매트릭스 물질; 0.5중량% 내지 5중량%의 적어도 하나의 상 변화 물질; 및 0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제를 포함한다.In certain embodiments of any of the above implementations, the thermal interface material comprises 1 wt% to 16 wt% of at least one polymer matrix material; From 0.5% to 8% by weight of at least one phase change material; And 0.1% to 1% by weight of at least one amine or amine based cross-linking agent. In a more particular embodiment, the thermal interface material comprises 1 wt% to 8 wt% of at least one polymer matrix material; From 0.5% to 5% by weight of at least one phase change material; And 0.1% to 1% by weight of at least one amine or amine based cross-linking agent.

상기 구현 중 어느 하나 이상의 특정 구현에서, 제1 복수의 입자는 산화 아연의 입자를 포함한다. 보다 특정한 구현에서, 산화 아연의 입자는 0.1미크론 내지 약 1미크론의 직경을 갖는다. 또 다른 더욱 특정한 구현에서, 산화 아연의 입자는 0.9미크론 이하의 직경을 갖는다.In certain embodiments of any of the above implementations, the first plurality of particles comprises particles of zinc oxide. In a more particular embodiment, the particles of zinc oxide have a diameter of from 0.1 micron to about 1 micron. In yet another more particular embodiment, the particles of zinc oxide have a diameter of 0.9 microns or less.

상기 구현 중 어느 하나 이상의 특정 구현에서, 열 전도성 충전제는 1미크론보다 큰 입자 직경을 갖는 제2 복수의 입자를 추가로 포함한다. 보다 더 특정한 구현에서, 제2 복수의 입자는 알루미늄의 입자를 포함한다. 보다 더 특정한 구현에서, 제2 복수의 입자는 약 3미크론 내지 약 15미크론의 직경을 갖는 알루미늄의 입자를 포함한다. 보다 더 특정한 구현에서, 제2 복수의 입자는 약 3미크론의 직경을 갖는 알루미늄 입자의 제1 부분 및 약 10미크론의 직경을 갖는 알루미늄 입자의 제2 부분을 포함한다.In certain embodiments of any of the above implementations, the thermally conductive filler further comprises a second plurality of particles having a particle diameter greater than 1 micron. In a more specific embodiment, the second plurality of particles comprises particles of aluminum. In a more particular embodiment, the second plurality of particles comprises particles of aluminum having a diameter of from about 3 microns to about 15 microns. In a more particular embodiment, the second plurality of particles comprises a first portion of aluminum particles having a diameter of about 3 microns and a second portion of aluminum particles having a diameter of about 10 microns.

상기 구현 중 어느 하나 이상의 특정 구현에서, 가교제는 아민 또는 아민계 가교제이다.In certain embodiments of any of the above implementations, the crosslinking agent is an amine or an amine based crosslinking agent.

상기 구현 중 어느 하나 이상의 특정 구현에서, 열 전도성 충전제는 열 계면 물질의 총 중량의 91중량% 내지 95중량%로 포함된다. 보다 더 특정한 구현에서, 열 전도성 충전제는 열 계면 물질의 총 중량의 92중량% 내지 94중량%로 포함된다.In certain embodiments of any of the above implementations, the thermally conductive filler comprises from 91% to 95% by weight of the total weight of the thermal interface material. In a more particular embodiment, the thermally conductive filler comprises from 92% to 94% by weight of the total weight of the thermal interface material.

상기 구현 중 어느 하나 이상의 특정 구현에서, 열 계면 물질은 티타네이트 커플링제와 같은 적어도 하나의 커플링제를 추가로 포함한다. 상기 구현 중 또 다른 어느 특정 구현에서, 열 계면 물질은 적어도 하나의 산화 방지제를 추가로 포함한다. 상기 구현 중 또 다른 어느 특정 구현에서, 열 계면 물질은 적어도 하나의 이온 스캐빈저(scavenger)를 추가로 포함한다. 상기 구현 중 또 다른 어느 특정 구현에서, 열 계면 물질은 적어도 하나의 틱소트로픽제(thixotropic agent)를 더 포함한다.In certain embodiments of any of the above implementations, the thermal interface material further comprises at least one coupling agent, such as a titanate coupling agent. In yet another particular embodiment of the above implementation, the thermal interface material further comprises at least one antioxidant. In yet another particular implementation of the above implementation, the thermal interface material further comprises at least one ion scavenger. In yet another particular implementation of the above implementation, the thermal interface material further comprises at least one thixotropic agent.

또 다른 구현에서, 열 계면 물질을 형성하기 위한 제형(formulation)이 제공된다. 상기 제형은 용매, 적어도 하나의 상 변화 물질, 적어도 하나의 폴리머 매트릭스 물질, 하나 이상의 열 전도성 충전제 및 적어도 하나의 가교제를 포함하며, 열 전도성 충전제는 열 계면 물질의 건조 중량(용매가 없는 중량)의 적어도 80중량%로 포함되며, 열 전도성 충전제는 1미크론 미만의 입자 직경을 갖는 제1 복수의 입자를 포함한다.In another embodiment, a formulation for forming a thermal interface material is provided. The formulation includes a solvent, at least one phase change material, at least one polymer matrix material, at least one thermally conductive filler, and at least one cross-linker, wherein the thermally conductive filler has a dry weight of the thermal interface material At least 80% by weight, and the thermally conductive filler comprises a first plurality of particles having a particle diameter of less than 1 micron.

또 다른 구현으로, 전자 부품이 제공된다. 전자 부품은 열 싱크, 전자 칩, 및 열 싱크와 전자 칩 사이에 배치된 열 계면 물질을 포함하고, 열 계면 물질은 적어도 하나의 상 변화 물질, 적어도 하나의 폴리머 매트릭스 물질, 하나 이상의 열 전도성 충전제 및 하나 이상의 가교제를 포함하며, 여기서 열 전도성 충전제는 열 계면 물질의 총 중량의 적어도 91중량%로 포함되며, 열 전도성 충전제는 1미크론 미만의 입자 직경을 갖는 제1 복수의 입자를 포함한다. 전자 칩 및 열 싱크는 수직 배향으로 위치되고, 열 계면 물질은 수직 배향된 전자 칩과 열 싱크 사이의 수직 배향으로 위치한다.In yet another embodiment, an electronic component is provided. The electronic component includes a heat sink, an electronic chip, and a thermal interface material disposed between the heat sink and the electronic chip, wherein the thermal interface material comprises at least one phase change material, at least one polymer matrix material, Wherein the thermally conductive filler comprises at least 91 weight percent of the total weight of the thermal interface material and the thermally conductive filler comprises a first plurality of particles having a particle diameter less than 1 micron. The electronic chip and the heat sink are positioned in a vertical orientation, and the thermal interface material is positioned in a vertical orientation between the vertically oriented electronic chip and the heat sink.

보다 특정한 구현으로, 열 계면 물질의 제1 표면은 전자 칩의 표면과 접촉하고, 열 계면 물질의 제2 표면은 열 싱크와 접촉한다. 또 다른 보다 특정한 구현으로, 전자 부품은 열 싱크와 전자 칩 사이에 배치된 열 확산기를 포함하며, 여기서 열 계면 물질의 제1 표면은 전자 칩의 표면과 접촉하고, 열 계면 물질의 제2 표면은 열 확산기와 접촉한다. 또 다른 보다 특정한 구현에서, 전자 부품은 열 싱크와 전자 칩 사이에 배치된 열 확산기를 포함하며, 여기서 열 계면 물질의 제1 표면은 열 확산기의 표면과 접촉하고, 열 계면 물질의 제2 표면은 열 싱크와 접촉한다.In a more particular embodiment, the first surface of the thermal interface material contacts the surface of the electronic chip, and the second surface of the thermal interface material contacts the heat sink. In another more specific implementation, the electronic component includes a heat spreader disposed between the heat sink and the electronic chip, wherein the first surface of the thermal interface material contacts the surface of the electronic chip, and the second surface of the thermal interface material And contacts the heat spreader. In another more specific implementation, the electronic component includes a heat spreader disposed between the heat sink and the electronic chip, wherein the first surface of the thermal interface material contacts the surface of the heat spreader and the second surface of the thermal interface material Contact the heat sink.

본 발명의 상기 언급된 특징 및 다른 특징 및 이점, 및 이를 달성하는 방법은 첨부된 도면을 함께 취하여 하기의 본 발명의 구현의 설명을 참조하면 보다 명백해질 것이며 더 잘 이해될 것이다.
도 1은 전자 칩, 열 확산기, 열 싱크 및 제1 및 제2 열 계면 물질을 개략적으로 나타낸 것이다.
도 2는 수직 배향으로 도 1의 전자 칩, 열 확산기, 열 싱크 및 제1 및 제2 열 계면 물질을 개략적으로 나타낸 것이다.
대응하는 레퍼런스 부호는 여러 도면에 걸쳐 대응하는 부분을 나타낸다. 여기에 설명된 예시들은 본 발명의 예시적인 구현들을 나타내고, 그러한 예시들은 어느 방식으로 본 발명의 범위를 제한하는 것으로 해석되어서는 안된다.
BRIEF DESCRIPTION OF THE DRAWINGS The above-mentioned and other features and advantages of the present invention and the manner of achieving it will become more apparent and may be better understood by referring to the following description of an embodiment of the invention taken in conjunction with the accompanying drawings.
1 schematically illustrates an electronic chip, a heat spreader, a heat sink, and first and second thermal interface materials.
Figure 2 schematically illustrates the electronic chip, heat spreader, heat sink, and first and second thermal interface materials of Figure 1 in a vertical orientation.
Corresponding reference characters denote corresponding parts throughout the several views. The examples set forth herein illustrate exemplary implementations of the invention, and such examples are not to be construed as limiting the scope of the invention in any way.

본 발명은 전자 부품으로부터 열을 전달하는 데 유용한 열 계면 물질에 관한 것이다.The present invention relates to thermal interface materials useful for transferring heat from electronic components.

A. 열 계면 물질A. Thermal interface materials

예시적인 일 구현으로, TIM(22)은 열 계면 물질이다. 일부 예시적인 구현으로, TIM(22)은 하나 이상의 상 변화 물질, 하나 이상의 폴리머 매트릭스 물질, 하나 이상의 열 전도성 충전제, 하나 이상의 가교제, 및 선택적으로 하나 이상의 첨가제를 포함한다.In one exemplary implementation, TIM 22 is a thermal interface material. In some exemplary implementations, TIM 22 includes one or more phase change materials, one or more polymer matrix materials, one or more thermally conductive fillers, one or more cross-linking agents, and optionally one or more additives.

a. 열 전도성 충전제a. Thermally conductive filler

일부 예시적인 구현으로, TIM(22)은 적어도 하나의 열 전도성 충전제를 포함한다.In some exemplary implementations, the TIM 22 includes at least one thermally conductive filler.

예시적인 열 전도성 충전제는 금속, 합금, 비금속, 금속 산화물, 금속 질화물 및 세라믹 및 이들의 조합을 포함한다. 예시적인 금속은 이에 한정되는 것은 아니나, 알루미늄, 구리, 은, 아연, 니켈, 주석, 인듐, 납, 은 코팅된 구리 또는 은 코팅된 알루미늄과 같은 은 코팅된 금속, 금속 코팅된 탄소 섬유 및 니켈 코팅된 섬유를 포함한다. 예시적인 비금속은 이에 한정되는 것은 아니나, 탄소, 카본 블랙, 흑연, 탄소 나노 튜브, 탄소 섬유, 그래핀, 분말 다이아몬드, 유리, 실리카, 질화규소 및 붕소 코팅된 입자를 포함한다. 예시적인 금속 산화물, 금속 질화물 및 세라믹은 이에 한정되는 것은 아니나, 알루미나, 질화 알루미늄, 질화 붕소, 산화 아연 및 산화 주석을 포함한다.Exemplary thermally conductive fillers include metals, alloys, non-metals, metal oxides, metal nitrides and ceramics, and combinations thereof. Exemplary metals include, but are not limited to, silver coated metals such as aluminum, copper, silver, zinc, nickel, tin, indium, lead, silver coated copper or silver coated aluminum, metal coated carbon fibers, ≪ / RTI > Exemplary base metals include, but are not limited to, carbon, carbon black, graphite, carbon nanotubes, carbon fibers, graphene, powdered diamonds, glass, silica, silicon nitride and boron coated particles. Exemplary metal oxides, metal nitrides and ceramics include, but are not limited to, alumina, aluminum nitride, boron nitride, zinc oxide, and tin oxide.

TIM(22)은 TIM(22)의 총 중량을 기준으로, 80중량%, 85중량%, 90중량%, 91중량%, 91.5중량%, 92중량%, 92.5중량%, 93중량% 정도로 작게, 93.5중량%, 94중량%, 95중량%, 96중량%, 97중량%, 98중량%, 99중량% 정도로 크게, 또는 80중량% 내지 99중량%, 91중량% 내지 99중량%, 91중량% 내지 95중량%, 또는 92중량% 내지 94중량%와 같이, 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 총량으로 하나 이상의 열 전도성 충전제를 포함할 수 있다.The TIM 22 may be as small as 80 wt%, 85 wt%, 90 wt%, 91 wt%, 91.5 wt%, 92 wt%, 92.5 wt%, 93 wt%, based on the total weight of the TIM 22, Or greater than or equal to about 93.5, 94, 95, 96, 97, 98, 99, or even 80, To 95% by weight, or from 92% by weight to 94% by weight, based on the total amount of the thermally conductive filler.

열 전도성 충전제는 입자로서 제공될 수 있다. 평균 입자 직경(D50)은 일반적으로 입자 크기를 측정하는 데 사용된다. 예시적인 입자는 10㎚, 20㎚, 50㎚, 0.1미크론, 0.2미크론, 0.5미크론, 1미크론, 2미크론, 3미크론 정도로 작은, 5미크론, 8미크론, 10미크론, 12미크론, 15미크론, 20 크론, 25미크론, 50미크론, 100미크론 정도로 큰, 또는 10nm 내지 100미크론, 0.1미크론 내지 20미크론, 또는 0.5미크론 내지 12미크론과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 평균 입자 직경을 갖는다.The thermally conductive filler may be provided as a particle. The average particle diameter (D50) is generally used to measure the particle size. Exemplary particles include, but are not limited to, 10 nm, 20 nm, 50 nm, 0.1 micron, 0.2 micron, 0.5 micron, 1 micron, 2 micron, 3 micron, 5 micron, 8 micron, 10 micron, 12 micron, 15 micron, , 25 microns, 50 microns, 100 microns, or an average particle diameter within any range defined between any two of these values, such as 10 nm to 100 microns, 0.1 microns to 20 microns, or 0.5 microns to 12 microns.

일 구현으로, 제1 열 전도성 충전제는 1미크론, 0.9미크론, 0.8미크론, 0.6미크론, 0.5미크론, 0.2미크론, 0.1미크론 또는 그 이하 정도로 작은, 또는 1미크론 내지 0.1미크론, 1미크론 내지 0.2미크론, 또는 1미크론 내지 0.8미크론과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 입자 직경을 갖는다. 보다 특정한 구현으로, 제1 열 전도성 충전제는 1미크론 이하의 직경을 갖는 복수의 산화 아연 입자를 포함한다.In one embodiment, the first thermally conductive filler is one micron, 0.9 micron, 0.8 micron, 0.6 micron, 0.5 micron, 0.2 micron, 0.1 micron or smaller, or 1 micron to 0.1 micron, 1 micron to 0.2 micron, or And has a particle diameter within a range defined between any two of these values, such as from 1 micron to 0.8 microns. In a more particular embodiment, the first thermally conductive filler comprises a plurality of zinc oxide particles having a diameter of 1 micron or less.

일 구현으로, 제1 열 전도성 충전제와 함께 제공되는 제2 열 전도성 충전제는 1미크론, 2미크론, 3미크론, 4미크론 정도로 작은, 6미크론, 8미크론, 10미크론, 또는 12미크론 정도로 큰, 또는 1미크론 내지 12미크론, 3미크론 내지 10미크론, 2미크론 내지 4미크론, 또는 8미크론 내지 12미크론과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 입자 직경을 갖는다. 보다 특정한 구현으로, 제2 열 전도성 충전제는 2미크론, 3미크론, 4미크론 정도로 작은, 6미크론, 8미크론, 10미크론 또는 12미크론 정도로 큰 직경을 갖는 입자, 또는 이의 혼합물을 포함하는, 1미크론 보다 큰 입자 크기의 혼합물을 갖는 입자들을 포함하여 구성된다. 보다 특정한 구현으로, 제1 열 전도성 충전제는 1미크론보다 큰 직경을 갖는 복수의 알루미늄 입자를 포함한다.In one embodiment, the second thermally conductive filler provided with the first thermally conductive filler is one micron, two microns, three microns, as small as four microns, six microns, eight microns, ten microns, or as large as 12 microns, Has a particle diameter within any range defined between any two of the above values, such as from 1 micron to 12 microns, from 3 microns to 10 microns, from 2 microns to 4 microns, or from 8 microns to 12 microns. In a more particular embodiment, the second thermally conductive filler may be less than 1 micron, including less than 2 microns, 3 microns, 4 microns, particles having a diameter as large as 6 microns, 8 microns, 10 microns, or 12 microns, And comprises particles having a mixture of large particle sizes. In a more particular embodiment, the first thermally conductive filler comprises a plurality of aluminum particles having a diameter greater than 1 micron.

보다 특정한 구현으로, 제2 열 전도성 충전제는 1미크론 보다 큰 직경을 갖는 복수의 입자를 포함하고, 제1 열 전도성 충전제는 1미크론 이하의 직경을 갖는 복수의 입자를 포함하고, 그리고 제1 열 전도성 충전제에 대한 제2 열 전도성 충전제의 중량비는 0.5:1, 1:1, 1.25:1, 1.5:1, 2:1, 2.5:1 정도로 작거나, 2.75:1, 3:1, 5:1, 10:1, 20:1 정도로 크거나, 또는 0.5:1 내지 20:1, 1:1 내지 10:1, 1.25:1 내지 5:1, 또는 2.5:1 내지 3:1과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내이다.In a more specific embodiment, the second thermally conductive filler comprises a plurality of particles having a diameter greater than 1 micron, the first thermally conductive filler comprises a plurality of particles having a diameter of 1 micron or less, and the first thermal conductivity The weight ratio of the second thermally conductive filler to the filler is as low as about 0.5: 1, 1: 1, 1.25: 1, 1.5: 1, 2: 1, 2.5: 10: 1, 20: 1, or any of the above values such as 0.5: 1 to 20: 1, 1: 1 to 10: 1, 1.25: 1 to 5: It is within a range defined between the two.

보다 특정한 구현으로, 열 전도성 충전제는 1미크론, 2미크론, 3미크론 정도로 작은, 5미크론, 8미크론, 10미크론, 12미크론, 15미크론 정도로 큰, 또는 1미크론 내지 15미크론 또는 2미크론 내지 12미크론, 또는 3미크론 내지 10미크론과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 입자 직경을 갖는 복수의 알루미늄 입자를 포함한다.In a more particular embodiment, the thermally conductive filler may be one micron, 2 microns, 3 microns tiny, 5 microns, 8 microns, 10 microns, 12 microns, 15 microns, or 1 micron to 15 microns, or 2 microns to 12 microns, Or a plurality of aluminum particles having a particle diameter within any range defined between any two of these values, such as from 3 microns to 10 microns.

b. 폴리머 매트릭스 물질b. Polymer matrix material

일부 예시적인 구현으로, TIM(22)은 폴리머 매트릭스 물질을 포함한다. 일부 예시적인 구현으로, 폴리머 매트릭스 물질은 열 전도성 충전제를 편입시키기 위한 매트릭스를 제공하고, 열 및 압력 하에서 가압될 경우에 유동성을 제공한다.In some exemplary implementations, TIM 22 includes a polymer matrix material. In some exemplary embodiments, the polymer matrix material provides a matrix for incorporating a thermally conductive filler and provides fluidity when pressed under heat and pressure.

일 예시적인 구현으로, 폴리머 매트릭스 물질은 탄화수소 고무 화합물 또는 고무 화합물의 블렌드를 포함한다. 예시적인 물질은 포화 및 불포화 고무 화합물을 포함한다. 일부 구현으로, 포화 고무는 불포화 고무 화합물보다 열 산화 분해에 덜 민감할 수 있다. 예시적인 포화 고무 화합물은 에틸렌-프로필렌 고무(EPR, EPDM), 폴리에틸렌/부틸렌, 폴리에틸렌-부틸렌-스티렌, 폴리에틸렌-프로필렌-스티렌, 하이드로게네이티드 폴리알킬디엔 "모노-올(mono-ols)"(하이드로게네이티드 폴리부타디엔 모노-올, 하이드로게네이티드 폴리프로파디엔(polypropadiene) 모노-올, 하이드로게네이티드 폴리펜타디엔 모노-올과 같은), 하이드로게네이티드 폴리알킬디엔 "디올(diols)"(하이드로게네이티드 폴리부타디엔 디올, 하이드로게네이티드 폴리프로파디엔 디올, 하이드로게네이티드 폴리펜타디엔 디올과 같은) 및 하이드로게네이티드 폴리이소프렌, 폴리올레핀 엘라스토머 또는 임의의 다른 적합한 포화 고무, 또는 이들의 블렌드를 포함한다. 일 구현으로, 폴리머 매트릭스 물질은 히드록실-말단 에틸렌 부틸렌 코폴리머, 특수 모노-올로도 지칭될 수 하이드로게네이티드 폴리부타디엔 모노-올이다.In one exemplary implementation, the polymer matrix material comprises a blend of a hydrocarbon rubber compound or a rubber compound. Exemplary materials include saturated and unsaturated rubber compounds. In some implementations, the saturated rubber may be less sensitive to thermal oxidative degradation than the unsaturated rubber compound. Exemplary saturated rubber compounds include ethylene-propylene rubber (EPR, EPDM), polyethylene / butylene, polyethylene-butylene-styrene, polyethylene- (Such as hydrogenated polybutadiene mono-ols, hydro- genated polypropadiene mono-ols, hydrogenated polypentadien mono-ols), hydrogenated polyalkyldiene "diols" Hydrogenated polybutadiene diols, hydrogenated polypropadiene diols, hydrogenated polypentadiene diols), and hydrogenated polyisoprene, polyolefin elastomers or any other suitable saturated rubber, or blends thereof . In one embodiment, the polymer matrix material is a hydroxyl-terminated ethylene butylene copolymer, a hydrogenated polybutadiene monool which may also be referred to as a special mono-ol.

일 예시적인 구현으로, 폴리머 매트릭스 물질은 실리콘 고무, 실록산 고무, 실록산 코폴리머 또는 어느 다른 적합한 실리콘-함유 고무를 포함한다.In one exemplary implementation, the polymer matrix material comprises a silicone rubber, a siloxane rubber, a siloxane copolymer, or any other suitable silicone-containing rubber.

일부 예시적인 구현으로, TIM(22)은 TIM(22)의 총량을 기준으로, 0.5중량%, 1중량%, 2중량%, 3중량%, 4중량% 정도로 적게, 5중량%, 6중량%, 7중량%, 8중량%, 10중량%, 12중량%, 16중량% 정도로 크게, 또는 1중량% 내지 16중량%, 1중량% 내지 8중량% 또는 4중량% 내지 6중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 폴리머 매트릭스 물질을 포함할 수 있다.In some exemplary implementations, the TIM 22 may comprise less than 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt% , 7% by weight, 8% by weight, 10% by weight, 12% by weight, 16% by weight or 1% by weight to 16% by weight, 1% by weight to 8% by weight or 4% by weight to 6% Lt; RTI ID = 0.0 > a < / RTI > amount within any range defined between any two of the values.

c. 상 변화 물질c. Phase change material

일부 예시적인 구현으로, TIM(22)은 하나 이상의 상 변화 물질을 포함한다. 상 변화 물질은 TIM(22)이 사용될 전자 장치의 일부의 작동 온도에서 또는 그 이하의 온도에서, 융점 또는 융점 범위를 갖는 물질이다. 예시적인 상 변화 물질은 파라핀 왁스와 같은 왁스이다. 파라핀 왁스는 일반식 CnH2n+2를 가지며 약 20℃ 내지 100℃ 범위의 융점을 갖는 고체 탄화수소의 혼합물이다. 폴리머 왁스는 폴리에틸렌 왁스 및 폴리프로필렌 왁스를 포함하며, 전형적으로 약 40℃ 내지 160℃의 융점 범위를 갖는다. 다른 예시적인 상 변화 물질은 우드 메탈(Wood's metal), 필드 메탈(Field's metal), 또는 융점이 약 20℃ 내지 90℃ 사이인 금속 또는 합금과 같은 저 융점 합금을 포함한다.In some exemplary implementations, TIM 22 includes one or more phase change materials. The phase change material is a material having a melting or melting range at or below the operating temperature of the portion of the electronic device in which the TIM 22 is to be used. Exemplary phase change materials are waxes such as paraffin wax. Paraffin wax is a mixture of solid hydrocarbons having the general formula C n H 2n + 2 and having a melting point in the range of about 20 캜 to 100 캜. Polymer waxes include polyethylene waxes and polypropylene waxes, and typically have a melting point range of about 40 占 폚 to 160 占 폚. Other exemplary phase change materials include Wood's metal, Field's metal, or a low melting point alloy such as a metal or alloy having a melting point between about 20 < 0 > C and 90 < 0 > C.

일부 구현으로, 상 변화 물질의 양은 TIM(22)의 경도를 조절하는 데 사용될 수 있다. 예를 들어, 상 변화 물질의 로딩이 낮은 일부 구현에서, 조성물은 연질 겔의 형태일 수 있으며, 그리고 상 변화 물질의 로딩이 높은 일부 구현에서, 조성물은 경질 고체일 수 있다. TIM(22)은 TIM(22)의 총 중량을 기준으로, 0.1중량%, 0.2중량%, 0.5중량%, 1중량%, 2중량% 정도로 적은 양으로, 3중량%, 3.5중량%, 4중량%, 5중량%, 7중량%, 8중량%, 10중량%, 12중량% 정도로 많은 양으로, 또는 0.1 중량% 내지 10중량%, 0.5중량% 내지 8중량% 또는 0.5중량% 내지 5중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 상 변화 물질을 포함할 수 있다.In some implementations, the amount of phase change material may be used to control the hardness of TIM 22. For example, in some implementations where the loading of the phase change material is low, the composition may be in the form of a soft gel, and in some implementations where the loading of the phase change material is high, the composition may be a hard solid. The TIM 22 may be present in an amount of less than 0.1 wt%, 0.2 wt%, 0.5 wt%, 1 wt%, 2 wt%, based on the total weight of the TIM 22, 3 wt%, 3.5 wt%, 4 wt% %, 5 wt%, 7 wt%, 8 wt%, 10 wt%, 12 wt% or 0.1 wt% to 10 wt%, 0.5 wt% to 8 wt% or 0.5 wt% to 5 wt% And may include one or more phase change materials in an amount within any range defined between any two of the above values.

d. 커플링제d. Coupling agent

일부 예시적인 구현으로, TIM(22)은 하나 이상의 커플링제를 포함한다. 일부 예시적인 구현에서, 커플링제의 포함은 폴리머 매트릭스와 열 전도성 충전제 사이에 계면을 제공함으로써 비교적 고온에서의 특성과 같은 열적 특성을 개선시킬 수 있다. 예시적인 커플링제는 미국 특허출원공개 제2011/0308782호에 개시된 것과 같은 티타네이트 커플링제를 포함하며, 이의 개시 내용은 그 전체가 본 명세서에 참고문헌으로 편입된다. 예시적인 커플링제는 다음을 포함한다:In some exemplary implementations, TIM 22 includes one or more coupling agents. In some exemplary embodiments, the inclusion of a coupling agent may improve thermal properties, such as properties at relatively high temperatures, by providing an interface between the polymer matrix and the thermally conductive filler. Exemplary coupling agents include titanate coupling agents such as those disclosed in U.S. Patent Application Publication No. 2011/0308782, the disclosure of which is incorporated herein by reference in its entirety. Exemplary coupling agents include:

티타늄 IV 2,2(비스 2-프로페놀라토메틸)부탄올라토, 트리스(디옥틸)피로포스파토-O(titanium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(dioctyl)pyrophosphato-O);Titanium IV 2,2 (bis 2-propenolatomethyl) butanolate, titanium IV 2,2 (bis 2-propenolatomethyl) butanolato, tris (dioctyl) pyrophosphato-O);

Figure pct00001
Figure pct00001

지르코늄 IV 2,2(비스 2-프로페놀라토메틸)부탄올라토, 트리스(디이소옥틸)피로포스파토-O(zirconium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(diisooctyl)pyrophosphato-O):Zirconium IV 2,2 (bis 2-propenolatomethyl) butanolato, tris (diisooctyl) pyrophosphato-O (zirconium IV 2,2 bis 2- propenolatomethyl butanolato, :

Figure pct00002
Figure pct00002

1몰의 디이소옥틸 포스파이트와의 티타늄 IV 2-프로파놀라토, 트리스(디옥틸)-피로포스파토-O) 부가물(titanium IV 2-propanolato, tris(dioctyl)-pyrophosphato-O) adduct with 1 mole of diisooctyl phosphite):Titanium IV 2-propanolate, tris (dioctyl) -pyrophosphato-O) adduct with 1 mol of diisooctylphosphite adduct (titanium IV 2-propanolato, tris with 1 mole of diisooctyl phosphite):

Figure pct00003
Figure pct00003

티타늄 IV 비스(디옥틸)피로포스파토-O, 옥소에틸렌디올라토, (부가물), 비스(디옥틸)(하이드로겐)포스파이트-O(titanium IV bis(dioctyl)pyrophosphato-O, oxoethylenediolato, (Adduct), bis(dioctyl) (hydrogen)phosphite-O):Titanium IV bis (dioctyl) pyrophosphato-O, oxoethylenediolato, (adduct), bis (dioctyl) pyrophosphato-O, Adduct), bis (dioctyl) (hydrogen) phosphite-O):

Figure pct00004
Figure pct00004

티타늄 IV 비스(디옥틸)피로포스파토-O, 에틸렌디올라토(부가물), 비스(디옥틸)하이드로겐 포스파이트(titanium IV bis(dioctyl)pyrophosphato-O, ethylenediolato (adduct), bis(dioctyl)hydrogen phosphite);Titanium IV bis (dioctyl) pyrophosphato-O, ethylenediolato (adduct), titanium IV bis (dioctyl) pyrophosphato-O, ethylenediolato (adduct), bis (dioctyl) hydrogen phosphite);

Figure pct00005
Figure pct00005

및 지르코늄 IV 2,2-비스(2-프로페놀라토메틸) 부타놀라토, 시클로 디[2,2-(비스 2-프로페놀라토메틸) 부타놀라토], 피로포스파토-O,O(zirconium IV 2,2-bis(2-propenolatomethyl) butanolato, cyclo di[2,2-(bis 2-propenolatomethyl) butanolato], pyrophosphato-O,O):And zirconium IV. In the case of zirconium IV, 2,2-bis (2-propenolatomethyl) butanolate, cyclodi [2,2- (bis 2-prophenolatomethyl) butanolate], zirconium IV 2,2-bis (2-propenolatomethyl) butanolato, cyclo [2,2- (bis 2-propenolatomethyl) butanolato], pyrophosphato-O,

Figure pct00006
Figure pct00006

일 예시적인 구현으로, 커플링제는 티타늄 IV 2,2(비스 2-프로페놀라토메틸) 부타놀라토, 트리스(디옥틸)피로포스파토-O(titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O)이다.In one exemplary embodiment, the coupling agent is selected from the group consisting of titanium IV 2,2 (bis 2-propenolatomethyl) butanolate, tris (dioctyl) pyrophosphato-O (titanium 2, , tris (dioctyl) pyrophosphato-O).

일부 예시적인 구현으로, TIM(22)은 TIM(22)의 총 중량을 기준으로, 0.1중량%, 0.2 중량%, 0.3중량%, 0.5중량% 정도로 적은 양으로, 1중량%, 2중량%, 3중량%, 5중량% 정도로 많은 양으로, 또는 0.1중량% 내지 5중량%, 0.2중량% 내지 2중량%, 또는 0.2중량% 내지 1중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 커플링제를 포함할 수 있다.In some exemplary implementations, the TIM 22 may comprise less than 0.1%, 0.2%, 0.3%, or 0.5% by weight, based on the total weight of the TIM 22, 3% by weight, 5% by weight in a large amount, or any range defined between any two of these values such as from 0.1% by weight to 5% by weight, from 0.2% by weight to 2% by weight, or from 0.2% Lt; RTI ID = 0.0 > of the < / RTI >

e. 가교제e. Cross-linking agent

일부 예시적인 구현으로, TIM(22)은 아민 또는 아민계 수지와 같은 하나 이상의 가교제를 포함한다. 가교제는 가교제 및 적어도 하나의 폴리머 매트릭스 물질 상의 1차 또는 말단 히드록실기 사이의 가교 반응을 촉진시키기 위해 열 계면 물질 조성물에 첨가되거나 편입된다. 예시적인 가교제는 미국 특허 제7,244,491호에 개시되어 있으며, 그 개시 내용은 그 전체가 본 명세서에 참고문헌으로 편입된다.In some exemplary implementations, TIM 22 includes one or more cross-linking agents, such as amine or amine based resins. The crosslinking agent is added to or incorporated into the thermal interface material composition to promote the crosslinking reaction between the crosslinking agent and the primary or terminal hydroxyl groups on the at least one polymer matrix material. Exemplary crosslinking agents are disclosed in U.S. Patent No. 7,244,491, the disclosure of which is incorporated herein by reference in its entirety.

일 예시적인 구현으로, 가교제는 수지 백본의 어느 부분에 적어도 하나의 아민 치환기를 포함하는 아민 또는 아민계 수지이다. 예시적인 아민 및 아민계 수지는 알킬화 멜라민 수지 및 우레아, 티오우레아, 멜라민 또는 알데히드, 특히 포름알데히드와 얼라이드 화합물(allied compounds)의 반응으로부터 유도된 합성 수지를 포함한다. 보다 특정한 구현에서, 가교제는 1차 아민 수지, 2차 아민 수지, 3차 아민 수지, 글리시딜 아민 에폭시 수지, 알콕시벤질 아민 수지, 에폭시 아민 수지, 멜라민 수지, 알킬화 멜라민 수지 및 멜라민-아크릴릭 수지로 구성되는 그룹으로부터 선택된 수지이다.In one exemplary embodiment, the cross-linking agent is an amine or amine-based resin comprising at least one amine substituent in any part of the resin backbone. Exemplary amine and amine based resins include alkylated melamine resins and synthetic resins derived from the reaction of urea, thiourea, melamine or aldehydes, especially formaldehyde, with allied compounds. In a more specific embodiment, the crosslinking agent is selected from the group consisting of a primary amine resin, a secondary amine resin, a tertiary amine resin, a glycidylamine epoxy resin, an alkoxybenzylamine resin, an epoxyamine resin, a melamine resin, an alkylated melamine resin and a melamine- Is a resin selected from the group consisting of.

일 예시적인 구현으로, 가교제는 멜라민 수지, 예컨대 알킬화 멜라민 수지 또는 보다 구체적으로 부틸화 멜라민 수지이다. 멜라민 수지는 고리계 화합물로 고리에는 3개의 탄소 원자와 3개의 질소 원자가 함유되어 있다. 멜라민 수지는 전형적으로 응축 반응을 통해 다른 화합물 및 분자와 쉽게 결합한다. 멜라민 수지는 전형적으로 다른 분자 및 화합물과 반응하여 사슬 성장 및 가교 결합을 촉진하고, 우레아 수지보다 내수성 및 내열성이 우수하고, 수용성 시럽 또는 물에 분산 가능한 불용성 분말로서 사용될 수 있고, 높은 융점(325℃ 초과)을 가지며, 비교적 비-가연성이다. 부틸화 멜라민 수지와 같은 알킬화 멜라민 수지는 수지 형성 동안 알킬 알코올을 편입함으로써 형성된다. 이들은 페인트 및 에나멜 용매 및 표면 코팅에 용해가능하다.In one exemplary embodiment, the cross-linking agent is a melamine resin, such as an alkylated melamine resin or more specifically a butylated melamine resin. The melamine resin is a cyclic compound containing three carbon atoms and three nitrogen atoms in the ring. Melamine resins typically bind easily to other compounds and molecules through condensation reactions. The melamine resin typically reacts with other molecules and compounds to promote chain growth and crosslinking, is superior to urea resin in water resistance and heat resistance, can be used as an insoluble powder that can be dispersed in water-soluble syrups or water, and has a high melting point And is relatively non-flammable. Alkylated melamine resins such as butylated melamine resins are formed by incorporating alkyl alcohols during resin formation. They are soluble in paint and enamel solvents and surface coatings.

일부 예시적인 구현으로, TIM(22)은 TIM(22)의 총 중량을 기준으로, 0.1중량%, 0.2중량%, 0.3중량%, 0.5중량% 정도로 적은 양으로, 1중량%, 2중량%, 3중량%, 5중량% 정도로 많은 양으로, 또는 0.1중량% 내지 5중량%, 0.2중량% 내지 2중량%, 또는 0.2중량% 내지 1중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 가교제를 포함할 수 있다.In some exemplary implementations, the TIM 22 may comprise less than 0.1%, 0.2%, 0.3%, or 0.5% by weight, based on the total weight of the TIM 22, 3% by weight, 5% by weight in a large amount, or any range defined between any two of these values such as from 0.1% by weight to 5% by weight, from 0.2% by weight to 2% by weight, or from 0.2% Lt; RTI ID = 0.0 > crosslinker < / RTI >

f. 첨가제f. additive

일부 예시적인 구현으로, TIM(22)은 하나 이상의 첨가제를 포함한다. 예시적인 첨가제는 산화 방지제, 이온 스캐빈저 및 틱소트로픽제(thixotropic agent)를 포함한다.In some exemplary implementations, the TIM 22 includes one or more additives. Exemplary additives include antioxidants, ion scavengers, and thixotropic agents.

일 예시적인 구현으로, 산화 방지제는 자유 라디칼의 전자를 산화제로 이동시킴으로써 폴리머 매트릭스의 열 분해를 억제한다. 예시적인 산화 방지제는 페놀계 산화 방지제, 아민계 산화 방지제, 또는 입체 장애 페놀 또는 아민 타입 산화 방지제와 같은 임의의 다른 적절한 타입의 산화 방지제 또는 이들의 조합을 포함한다. 예시적인 산화 방지제는 Irganox® 1076 또는 옥타데실 3-(3,5-디-(tert)-부틸-4-히드록시페닐)프로피오네이트와 같은 페놀 타입 산화 방지제; Irganox® 565 또는 2,6-디-tert-부틸-4-(4,6-비스(옥틸티오)-1,3,5-트리아진-2-일아미노) 페놀과 같은 아민 타입 산화 방지제, 및 입체 장애 황 함유 페놀릭 산화 방지제와 같은 황 함유 페놀릭 산화 방지제를 포함한다. 다른 예시적인 산화 방지제는 다음을 포함한다:In one exemplary embodiment, the antioxidant inhibits the thermal decomposition of the polymer matrix by transferring electrons of free radicals to the oxidant. Exemplary antioxidants include phenol-based antioxidants, amine-based antioxidants, or any other suitable type of antioxidants such as sterically hindered phenol or amine-type antioxidants, or combinations thereof. Exemplary antioxidants include phenolic-type antioxidants such as Irganox® 1076 or octadecyl 3- (3,5-di- (tert) -butyl-4-hydroxyphenyl) propionate; Amine type antioxidants such as Irganox 565 or 2,6-di-tert-butyl-4- (4,6-bis (octylthio) -1,3,5-triazin- Sulfur-containing phenolic antioxidants such as sterically hindered phenolic antioxidants. Other exemplary antioxidants include:

Irganox® 1010:Irganox® 1010:

Figure pct00007
Figure pct00007

Irgafos 168®:Irgafos 168®:

Figure pct00008
Figure pct00008

및 Irganox® 802:And Irganox 占 802:

Figure pct00009
Figure pct00009

일부 예시적인 구현으로, TIM(22)은 TIM(22)의 총 중량을 기준으로, 0.05중량%, 0.1중량%, 0.2중량%, 0.5중량% 정도로 적은 양으로, 1중량%, 1.5중량%, 2중량%, 5중량% 정도로 많은 양으로, 또는 0.05중량% 내지 5중량%, 0.1중량% 내지 2중량%, 또는 0.1중량% 내지 1중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 산화 방지제를 포함할 수 있다.In some exemplary implementations, the TIM 22 may comprise less than 0.05 wt%, 0.1 wt%, 0.2 wt%, or 0.5 wt%, based on the total weight of the TIM 22, 1 wt%, 1.5 wt% Or any range defined between any two of these values, such as from 0.05% by weight to 5% by weight, from 0.1% by weight to 2% by weight, or from 0.1% by weight to 1% Lt; RTI ID = 0.0 > antioxidant < / RTI >

일부 예시적인 구현으로, 이온 스캐빈저는 이들이 폴리머 내에서 자유 라디컬의 형성을 개시할 수 없도록 금속 이온을 포획하고 바인딩함으로써 폴리머 매트릭스의 열 분해를 억제한다. 예시적인 이온 스캐빈저는 PCT 출원번호 PCT/CN2014/081724에 개시되어 있으며, 이는 그 전체가 본 명세서에 참고문헌으로 편입된다. 예시적인 이온 스캐빈저는 다음을 포함한다:In some exemplary embodiments, the ion scavenger inhibits the thermal decomposition of the polymer matrix by capturing and binding metal ions such that they can not initiate the formation of free radicals in the polymer. Exemplary ion scavengers are disclosed in PCT Application No. PCT / CN2014 / 081724, which is incorporated herein by reference in its entirety. Exemplary ion scavengers include:

N-살리실리덴-N'살리실로일 히드라지드(N-salicylidene-N'salicyloyl hydrazide):N-salicylidene-N ' salicyloyl hydrazide:

Figure pct00010
Figure pct00010

옥살릴 비스(벤질리덴히드라지드)(oxalyl bis(benzylidenehydrazide)):Oxalyl bis (benzylidenehydrazide): < RTI ID = 0.0 >

Figure pct00011
Figure pct00011

N,N'-비스(살리실로일)히드라진(N,N'-bis(salicyloyl)hydrazine):N, N'-bis (salicyloyl) hydrazine:

Figure pct00012
Figure pct00012

3-(N-살리실로일)아미노-1,2,4-트리아졸(3-(N-salicyloyl)amino-1,2,4-triazole):3- (N-salicyloyl) amino-1,2,4-triazole):

Figure pct00013
Figure pct00013

2,2'-옥스아미도 비스[에틸 3-(3,5-디-tert-부틸-4-히드록시페닐)프로피오네이트](2,2'-oxamido bis[ethyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]):2,2'-oxamido bis [ethyl 3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] di-tert-butyl-4-hydroxyphenyl) propionate]):

Figure pct00014
Figure pct00014

N,N'-비스(살리실리덴)에틸렌디아민(N,N'-bis(salicylidene) ethylenediamine):N, N'-bis (salicylidene) ethylenediamine:

Figure pct00015
Figure pct00015

2',3-비스[[3-[3,5-디-tert-부틸-4-히드록시페닐]프로피오닉]]프로피오닐 히드라지드(2', 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide):Bis [[3- [3,5-di-tert-butyl-4-hydroxyphenyl] propionic acid]] propionyl hydrazide (2 ', 3-bis [ -di-tert-butyl-4-hydroxyphenyl] propionic]] propionyl hydrazide):

Figure pct00016
Figure pct00016

옥사닐리드(Oxanilide):Oxanilide:

Figure pct00017
Figure pct00017

메틸말로닉산 디아닐리드(Methylmalonic acid dianilide):Methylmalonic acid dianilide:

Figure pct00018
Figure pct00018

N-포르밀-N'-살리실로일 히드라진(N-formyl-N'-salicyloyl hydrazine):N-formyl-N'-salicyloyl hydrazine: N-formyl-

Figure pct00019
Figure pct00019

데카메틸렌디카르복실릭산 디살리실로일히드라지드(Decamethylenedicarboxylic acid disalicyloylhydrazide):Decamethylenedicarboxylic acid disalicyloylhydrazide: decamethylenedicarboxylic acid disalicyloylhydrazide:

Figure pct00020
Figure pct00020

및 비스(2,6-디-ter-부틸-4-메틸페닐)펜타에리트리톨-디포스파이트(Bis(2,6-di-ter-butyl-4-methylphenyl)pentaerythritol-diphosphite):And bis (2,6-di-tert-butyl-4-methylphenyl) pentaerythritol-diphosphite:

Figure pct00021
Figure pct00021

일부 예시적인 구현으로, TIM(22)은 TIM의 총 중량을 기준으로, 0.05중량%, 0.1중량%, 0.2중량%, 0.5중량% 정도로 적은 양으로, 0.6중량%, 1중량%, 1.5중량%, 2중량%, 5중량% 정도로 많은 양으로, 또는 0.05중량% 내지 5중량%, 0.1중량% 내지 1중량%, 또는 0.1중량% 내지 0.6중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 이온 스캐빈저를 포함할 수 있다.In some exemplary implementations, the TIM 22 may comprise less than 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.5 wt%, 0.6 wt%, 1 wt%, 1.5 wt% , 2% by weight, 5% by weight, or 0.05% by weight to 5% by weight, 0.1% by weight to 1% by weight, or 0.1% by weight to 0.6% by weight And may include one or more ion scavengers in an amount within the range.

예시적인 틱소트로픽제는 퓸드 실리카 및 셀룰로오스를 포함한다. 일부 예시적인 구현으로, TIM(22)은 TIM의 총 중량을 기준으로, 0.1중량%, 0.2중량%, 0.3중량%, 0.5중량% 정도로 적은 양으로, 1중량%, 2중량%, 3중량%, 5중량% 정도로 많은 양으로, 또는 0.1중량% 내지 5중량%, 0.2중량% 내지 2중량%, 또는 0.2중량% 내지 1중량%와 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 틱소트로픽제를 포함할 수 있다.Exemplary thixotropic agents include fumed silica and cellulose. In some exemplary implementations, the TIM 22 may comprise 1 wt%, 2 wt%, 3 wt%, or less, in an amount as low as 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.5 wt% , In an amount in the order of 5% by weight, or in an amount within any range defined between any of the above values, such as from 0.1% to 5%, 0.2% to 2%, or 0.2% One or more thixotropic agents.

B. 열 계면 물질 형성 방법B. Method of forming thermal interface material

일부 구현으로, TIM(22)은 하나 이상의 폴리머 매트릭스 물질, 하나 이상의 상 변화 물질, 둘 이상의 열 전도성 충전제, 하나 이상의 용매, 및 선택적으로 하나 이상의 첨가제를 포함하는 디스펜서블 제형(dispensable formulation)으로부터 형성된다. In some implementations, the TIM 22 is formed from a dispensable formulation comprising one or more polymer matrix materials, one or more phase change materials, two or more thermally conductive fillers, one or more solvents, and optionally one or more additives .

예시적인 용매는 미국 특허출원공개 제2007/0517733호에 개시되어 있으며, 그 개시 내용은 본 명세서에 참고문헌으로 편입된다. 적합한 용매는 임계 온도와 같은 원하는 온도에서 휘발되거나, 상술한 설계 목표 또는 필요성 중 어느 것을 용이하게 할 수 있고, 그리고 이들이 앞서 언급된 목표를 달성하기 위해 상 변화 물질과 상호작용하는 점에서 상 변화 물질과 양립할 수 있는 순수 용매 또는 유기 또는 무기 용매의 혼합물을 포함한다. 일부 구현에서, 용매, 용매 혼합물 또는 이들의 조합은 프린팅 기술에 의해 적용될 수 있도록 상 변화 물질을 용매화시킬 것이다. 일부 예시적인 구현에서, 용매 또는 둘 이상의 용매의 혼합물은 탄화수소 계열의 용매로부터 선택된다. 탄화수소 용매는 탄소와 수소를 포함한다. 탄화수소 용매의 대부분은 비극성이나; 극성으로 여겨지는 약간의 탄화수소 용매가 있다.Exemplary solvents are disclosed in U.S. Patent Application Publication No. 2007/0517733, the disclosure of which is incorporated herein by reference. Suitable solvents may be volatilized at a desired temperature, such as a critical temperature, or may facilitate any of the above-mentioned design goals or needs, and that they may interact with the phase change material to achieve the aforementioned goals, Or a mixture of organic or inorganic solvents. In some implementations, the solvent, solvent mixture or combination thereof will solvate the phase change material so that it can be applied by a printing technique. In some exemplary embodiments, the solvent or mixture of two or more solvents is selected from hydrocarbon series solvents. Hydrocarbon solvents include carbon and hydrogen. Most of the hydrocarbon solvents are non-polar; There are some hydrocarbon solvents that are considered polar.

탄화수소 용매는 일반적으로 3개의 부류, 즉 지방족, 고리형 및 방향족으로 분류된다. 지방족 탄화수소 용매는 직쇄 화합물 및 분지화되고 가능하게는 가교 결합된 화합물을 모두 포함하지만, 지방족 탄화수소 용매는 전형적으로 고리형으로 간주되지 않는다. 고리형 탄화수소 용매는 지방족 탄화수소 용매와 유사한 특성을 갖는 고리 구조로 배향된 적어도 3개의 탄소 원자를 포함하는 용매이다. 방향족 탄화수소 용매는 일반 결합(common bond) 및/또는 함께 융합된 다중 고리에 의해 부착된 단일 고리 또는 다중 고리를 갖는 일반적으로 3개 또는 그 이상의 불포화 결합을 포함하는 용매이다. 일부 예시적인 구현으로, 용매 또는 둘 이상의 용매의 혼합물은 케톤, 알코올, 에스테르, 에테르 및 아민과 같은 탄화수소 용매 계열의 화합물의 일부로 간주되지 않는 용매로부터 선택된다. 또 다른 고려되는 구현으로, 용매 또는 용매 혼합물은 본 명세서에 언급된 어느 용매들의 조합을 포함할 수 있다.Hydrocarbon solvents are generally classified into three classes: aliphatic, cyclic and aromatic. Aliphatic hydrocarbon solvents include both straight chain compounds and branched and possibly crosslinked compounds, but aliphatic hydrocarbon solvents are not typically considered cyclic. The cyclic hydrocarbon solvent is a solvent comprising at least three carbon atoms oriented in a ring structure having properties similar to an aliphatic hydrocarbon solvent. Aromatic hydrocarbon solvents are solvents that generally contain three or more unsaturated bonds with a single bond or multiple rings attached by common bonds and / or multiple rings fused together. In some exemplary embodiments, the solvent or mixture of two or more solvents is selected from a solvent that is not considered part of a hydrocarbon solvent-based compound such as ketones, alcohols, esters, ethers, and amines. In another contemplated implementation, the solvent or solvent mixture may comprise any combination of solvents mentioned herein.

예시적인 탄화수소 용매는 톨루엔, 자일렌, p-자일렌, m-자일렌, 메시틸렌, 용매 나프타 H, 용매 나프타 A, 이소파르 H 및 기타 파라핀 오일 및 이소파라핀 유체, 알칸, 예컨대 펜탄, 헥산, 이소헥산, 헵탄 , 노난, 옥탄, 도데칸, 2-메틸부탄, 헥사데칸, 트리데칸, 펜타데칸, 시클로펜탄, 2,2,4-트리메틸펜탄, 석유 에테르, 할로겐화 탄화수소, 예컨대 염소화 탄화수소, 질화 탄화수소, 벤젠, 1,2-디메틸 벤젠, 1,2,4-트리메틸벤젠, 미네랄 스피릿, 등유, 이소부틸벤젠, 메틸나프탈렌, 에틸톨루엔, 리그로인(ligroine)을 포함한다. 예시적인 케톤 용매는 아세톤, 디에틸 케톤, 메틸 에틸 케톤 등을 포함한다.Exemplary hydrocarbon solvents include but are not limited to toluene, xylene, p-xylene, m-xylene, mesitylene, solvent naphtha H, solvent naphtha A, isoparaffin and other paraffin oils and isoparaffin fluids, alkanes such as pentane, Hexane, heptane, heptane, nonane, octane, dodecane, 2-methylbutane, hexadecane, tridecane, pentadecane, cyclopentane, 2,2,4-trimethylpentane, petroleum ether, halogenated hydrocarbons such as chlorinated hydrocarbons, , Benzene, 1,2-dimethylbenzene, 1,2,4-trimethylbenzene, mineral spirit, kerosene, isobutylbenzene, methylnaphthalene, ethyltoluene, and ligroine. Exemplary ketone solvents include acetone, diethyl ketone, methyl ethyl ketone, and the like.

일 예시적인 구현으로, 용매는 펜탄, 헥산, 헵탄, 시클로헥산, 파라핀 오일, 이소파라피닉 유체, 벤젠, 톨루엔, 자일렌 및 이의 혼합물 또는 조합으로부터 선택된 하나 이상의 용매를 포함한다.In one exemplary embodiment, the solvent comprises at least one solvent selected from pentane, hexane, heptane, cyclohexane, paraffin oil, isoparaffinic fluid, benzene, toluene, xylene and mixtures or combinations thereof.

일부 예시적인 구현으로, 제형은 제형의 총 중량을 기준으로, 0.1중량%, 0.5중량%, 1중량% 정도로 적은 양으로, 5중량%, 10중량%, 20중량% 정도로 많은 양으로, 또는 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 양으로 하나 이상의 용매를 포함할 수 있다.In some exemplary embodiments, the formulation is present in an amount as low as 0.1 wt%, 0.5 wt%, 1 wt%, 5 wt%, 10 wt%, 20 wt% And may include one or more solvents in an amount within any range defined between any two of the values.

일부 예시적인 구현으로, TIM(22)을 형성하는 방법이 제공된다. 일부 예시적인 구현으로, TIM(22)의 형성은 TIM(22)의 베이킹 및 건조와 같은 프로세스를 포함한다.In some exemplary implementations, a method of forming a TIM 22 is provided. In some exemplary implementations, the formation of the TIM 22 includes a process such as baking and drying of the TIM 22.

일부 예시적인 구현으로, TIM(22)을 베이킹하는 것은 25℃, 50℃, 75℃, 80℃ 정도로 낮은 온도에서, 100℃, 125℃, 150℃, 170℃ 정도로 높은 온도에서, 또는 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 온도에서 베이킹하는 것을 포함한다. 일부 예시적인 구현으로, TIM(22)은 0.5분, 1분, 30분, 1시간, 2시간 정도로 조금, 8시간, 12시간, 24시간, 36시간, 48시간 정도로 길게, 또는 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내로 베이킹된다.In some exemplary implementations, baking the TIM 22 can be performed at temperatures as low as 25 DEG C, 50 DEG C, 75 DEG C, 80 DEG C, at temperatures as high as 100 DEG C, 125 DEG C, 150 DEG C, 170 DEG C, And baking at a temperature within a range defined between any two. In some exemplary implementations, the TIM 22 may be configured to be as short as 0.5 minutes, 1 minute, 30 minutes, 1 hour, 2 hours, 8 hours, 12 hours, 24 hours, 36 hours, 48 hours, And baked within a range defined between the two.

C. 열 계면 물질 특성C. Thermal Interface Material Properties

일부 예시적인 구현으로, TIM(22)은 0.05℃·㎠/W, 0.06℃·㎠/W, 0.07℃·㎠/W 정도로 낮은 열 임피던스, 0.08℃·㎠/W, 0.09℃·㎠/W, 0.1℃·㎠/W, 0.12℃·㎠/W 정도로 높은 열 임피던스, 또는 0.05℃·㎠/W 내지 0.12℃·㎠/W, 0.06℃·㎠/W 내지 0.1℃·㎠/W 또는 0.06℃·㎠/W 내지 0.08℃·㎠/W와 같이, 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 열 임피던스를 갖는다.In some exemplary implementations, the TIM 22 has a thermal impedance as low as 0.05 占 폚 占 / / W, 0.06 占 폚 占 / / W and 0.07 占 · 占 / / W, 0.08 占 폚 占 / / W, 0.09 占 폚 占 / / A high thermal impedance of 0.1 占 폚 占 / / W and 0.12 占 폚 占 / / W or 0.05 占 폚 占 / 2 / W to 0.12 占 폚 占 / / W, 0.06 占 폚 占 ㎠ / W to 0.1 占 폚 占 ㎠ / W or 0.06 占 폚 Cm < 2 > / W to 0.08 DEG C / cm < 2 > / W.

일부 예시적인 구현으로, TIM(22)은 130℃의 온도 및 85%의 상대습도에서 96시간 동안 컨디셔닝한 후에 20% 이하, 10% 이하, 5% 이하, 또는 상기 컨디셔닝 이전에 TIM(22)의 열 임피던스 이하의 열 임피던스를 갖는다.In some exemplary implementations, the TIM 22 is conditioned to a temperature of less than 20%, less than 10%, less than 5%, or even less than 5% of the temperature of the TIM 22 And has a thermal impedance lower than the thermal impedance.

일부 예시적인 구현으로, TIM(22)은 150℃의 온도에서 1000시간 동안 컨디셔닝한 후에 20% 이하, 10% 이하, 5% 이하, 또는 상기 컨디셔닝 이전에 TIM(22)의 열 임피던스 이하의 열 임피던스를 갖는다.In some exemplary implementations, the TIM 22 has a thermal impedance of less than 20%, less than 10%, less than 5%, or less than the thermal impedance of the TIM 22 prior to conditioning, after conditioning for 1000 hours at a temperature of 150 ° C .

열 발생 및 열 방산 부품들 사이에 적용된 후, 적용된 TIM의 최종 두께는 본드 라인 두께(BLT)로 지칭된다. BLT의 값은 열 발생 부품에 의해 가열될 때의 TIM의 유동성에 의해 부분적으로 결정된다. 상 변화 물질(PCM)은 열 발생 부품에 의해 가열될 때 TIM의 유동성을 증가시키는 왁스 또는 다른 물질을 포함하며, 이는 결과적으로 BLT를 감소시킨다. BLT는 열 임피던스(TI) 및 열 전도도(TC)와 식 TI = BLT/TC의 관계로 인해 BLT가 낮으면 동일한 열 전도도에서 보다 낮은 열 임피던스를 형성한다. 어느 특정 이론에 구속되는 것을 아니나, 열 전도성 충전제의 다중 크기를 포함하는 것이 더 작은 입자 크기가 보다 큰 입자 크기들 사이에 존재하는 갭을 채우고, TIM의 유동성을 증가시키고, BLT를 감소시키는 것을 가능하게 한다고 믿어진다. 낮은 BLT를 갖는 TIM 제형은 낮은 열 임피던스를 갖는 경향이 있다.After being applied between the heat generating and heat dissipating parts, the final thickness of the applied TIM is referred to as the bond line thickness (BLT). The value of BLT is determined in part by the flowability of the TIM when heated by the heat generating component. The phase change material (PCM) comprises wax or other material that increases the flowability of the TIM when heated by the heat generating component, which in turn reduces the BLT. BLTs form lower thermal impedances at the same thermal conductivity when the BLT is low due to the relationship between the thermal impedance (TI) and thermal conductivity (TC) and the equation TI = BLT / TC. Without being bound to any particular theory, it is possible to include multiple sizes of thermally conductive fillers to fill gaps where smaller particle sizes exist between larger particle sizes, to increase the flowability of TIMs, and to reduce BLT . TIM formulations with low BLT tend to have low thermal impedances.

일부 구현으로, 40psi의 압력을 받고 80℃로 가열될 경우, TIM(22)은 80미크론, 70미크론, 60미크론, 50미크론, 40미크론 정도로 큰 두께의 본드 라인 두께, 30미크론, 25미크론, 20미크론, 15미크론, 10미크론, 5미크론 이하 정도로 작은 두께의 본드 라인 두께, 또는 80미크론 내지 5미크론, 60미크론 내지 10미크론, 또는 30미크론 내지 20미크론과 같이 상기 값들 중 어느 둘 사이에 정의된 어느 범위 내의 본드 라인 두께를 갖는다.In some implementations, when subjected to a pressure of 40 psi and heated to 80 DEG C, the TIM 22 has a bond line thickness of 80 microns, 70 microns, 60 microns, 50 microns, 40 microns thick, 30 microns, 25 microns, 20 microns A thickness of the bond line as small as 15 microns, 15 microns, 10 microns, 5 microns or less, or any of the values defined between any two of these values such as 80 microns to 5 microns, 60 microns to 10 microns, or 30 microns to 20 microns And has a bond line thickness in the range.

일부 구현으로, TIM(22)은 상승된 온도에서 드리핑에 저항한다. 일 예시적인 드리핑 시험에서, TIM(22) 조성물은 2개의 금속 막대들 사이에 약 0.6mm의 두께로 적용되고 약 30psi의 압력을 받는다. 금속 사이의 TIM(22) 계면은 수직으로 위치하며 2일 동안 120℃의 온도를 받는다. 2일 동안 계면으로부터 드리핑되는 어느 TIM(22) 물질은 베이킹 시험에 실패했음을 나타낸다. 그 다음, 샘플은 -55℃ 내지 125℃ 사이에서 90번 순환된다. 순환 중에 계면으로부터 드리핑되는 어느 TIM(22)은 순환 시험에 실패했음을 나타낸다.In some implementations, the TIM 22 is resistant to dripping at elevated temperatures. In one exemplary droplet test, the TIM 22 composition is applied between two metal rods to a thickness of about 0.6 mm and is subjected to a pressure of about 30 psi. The TIM (22) interface between the metals is positioned vertically and is subjected to a temperature of 120 DEG C for two days. Any TIM (22) material that has been drained from the interface for 2 days indicates that the baking test failed. The sample is then cycled 90 times between -55 ° C and 125 ° C. Any TIM 22 that is draining from the interface during circulation indicates that the circulation test failed.

실시예Example

실시예는 표 1에 나타낸 조성에 따라 제조되었다. 표 1에 나타낸 바와 같이, 실시예 1은 멜라민 수지 가교제 및 1미크론보다 큰 직경을 갖는 알루미늄 입자 및 1미크론 미만의 직경을 갖는 산화 아연 입자를 포함하여 구성된 약 91.9중량% 총 열 전도성 충전제를 포함하였다. 비교예 1은 멜라민 수지 가교제가 결여되었고, 약 90.8중량% 총 열 전도성 충전제만을 포함하였으며, 1미크론 미만의 직경을 갖는 어느 입자를 포함하지 않았다. 비교예 2는 멜라민 수지 가교제를 포함하였으나, 단지 약 89.8중량% 총 열 전도성 충전제를 가졌으며, 1미크론 미만의 직경을 갖는 어느 입자를 포함하지 않았다. 비교예 3은 멜라민 수지 가교제가 결여되었지만, 1미크론보다 큰 직경을 갖는 알루미늄 입자 및 1미크론 미만의 직경을 갖는 산화 아연 입자를 포함하여 구성된 약 90.3중량% 총 열 전도성 충전제를 포함하였다.Examples were prepared according to the compositions shown in Table 1. As shown in Table 1, Example 1 included about 91.9 wt% total thermally conductive filler consisting of a melamine resin cross-linker and aluminum particles having a diameter greater than 1 micron and zinc oxide particles having a diameter less than 1 micron . Comparative Example 1 lacked a melamine resin crosslinker and contained only about 90.8 wt% total thermally conductive filler and did not contain any particles with diameters less than 1 micron. Comparative Example 2 contained a melamine resin crosslinker, but only had about 89.8 wt% total thermal conductive filler and did not contain any particles having a diameter less than 1 micron. Comparative Example 3 included about 90.3 wt% total thermally conductive filler consisting of aluminum particles having a diameter greater than 1 micron and zinc oxide particles having a diameter less than 1 micron, although the melamine resin crosslinker was absent.

[표 1][Table 1]

Figure pct00022
Figure pct00022

각각의 TIM은 수직 방향으로 계면이 배향된 2개의 금속 플레이트들 사이에 샌드위치되고 30psi가 가해진다. 각 샘플에 대한 원래의 두께는 표 2에 나타낸 바와 같이 약 0.6mm였다.Each TIM is sandwiched between two metal plates whose interfaces are oriented vertically and applied at 30 psi. The original thickness for each sample was about 0.6 mm as shown in Table 2.

각 샘플에 120℃의 온도에서 2일 동안 베이킹 테스트를 실시하였다. 2일 동안 계면으로부터 드리핑되는 어느 TIM 물질은 베이킹 테스트 실패를 나타낸다. 그 다음, 각 샘플은 -55℃ 내지 125℃까지 90 온도 사이클의 열 순환 테스트를 2일 반 동안 받았다. 순환 중에 계면으로부터 드리핑되는 어느 TIM 물질은 열 순환 테스트 실패를 나타낸다.Each sample was baked for 2 days at a temperature of 120 ° C. Any TIM material that is drained from the interface for 2 days represents a failure of the baking test. Each sample was then subjected to a thermal cycling test of 90 temperature cycles from -55 ° C to 125 ° C for two and a half days. Any TIM material that is drained from the interface during cycling indicates a failure in the thermocycling test.

[표 2][Table 2]

Figure pct00023
Figure pct00023

표 2에 나타낸 바와 같이, 서브미크론 열 전도성 충전제 및 가교제를 포함하는 실시예 1만이 베이킹 테스트 및 열 순환 온도 순환 테스트를 통과하였다. 가교제를 포함하지만 서브미크론 충전제가 없는 비교예 1 및 2는 베이킹 결과 테스트 및 열 순환 온도 순환 테스트 모두에 실패했다. 서브미크론 충전제를 포함하지만 가교제가 없는 비교예 3은 베이킹 테스트를 통과했지만 열 순환 온도 순환 테스트에 실패했다. 실시예 1은 비교예들 중 어느 것보다 우수한 안티-트립 특성을 가졌다.As shown in Table 2, only Example 1, which includes a submicron thermally conductive filler and a crosslinking agent, passed the baking test and the thermocycling temperature cycling test. Comparative Examples 1 and 2, which included a cross-linker but no submicron filler, failed both in the baking result test and in the thermocycling temperature cycling test. Comparative Example 3, which contained a submicron filler but no crosslinker, passed the baking test but failed in the thermocycling temperature cycling test. Example 1 had better anti-trip properties than either of the comparative examples.

각 TIM에 열 신뢰도 시험을 실시하였다. 각 샘플을 90℃에서 1시간 동안 금형에 끼우고 본래의 열 임피던스와 두께(본드 라인 두께)를 측정하였다. 비교예 1, 비교예 2 및 실시예 1의 경우, 각 물질의 처음 2개 샘플은 35psi로 가압되고, 3번째 샘플은 압력없이 베이킹되었다. 비교예 3의 경우, 3개의 샘플 중 어느 것에도 압력을 가하지 않았다.Thermal reliability tests were performed on each TIM. Each sample was placed in a mold at 90 ° C for 1 hour and the intrinsic thermal impedance and thickness (bond line thickness) were measured. For Comparative Example 1, Comparative Example 2 and Example 1, the first two samples of each material were pressurized to 35 psi and the third sample was baked without pressure. In the case of Comparative Example 3, no pressure was applied to any of the three samples.

각 샘플을 260℃에서 10분 동안 베이킹한 후, 샘플을 세척하고 열 임피던스를 재시험하였다. 실시예 1의 경우, 샘플을 또한 20분 동안 베이킹한 후, 이들을 세척하고 열 임피던스를 재시험하였다. 베이킹 후 열 임피던스의 변화가 작은 것이 바람직하다.After each sample was baked at 260 ° C for 10 minutes, the sample was washed and the thermal impedance was re-examined. For Example 1, the samples were also baked for 20 minutes, then they were washed and the thermal impedance was re-examined. It is preferable that the change in thermal impedance after baking is small.

[표 2][Table 2]

Figure pct00024
Figure pct00024

표 3에 나타낸 바와 같이, 서브미크론 열 전도성 충전제 및 가교제를 포함하는 실시예 1만이 가압된(35psi) 결과 및 가압되지 않은(0psi) 결과 모두에서 양호한 결과를 제공하였다. 실시예 1의 열 임피던스는 26℃에서 20분 후에도 비교적 일정한 것으로 나타났다. 가교제를 포함하지만 서브미크론 충전제가 없는 비교예 1 및 2는 가압된(35psi) 경우 열 임피던스의 증가를 나타내고, 가압되지 않은(0psi) 경우 열 임피던스의 실질적인 증가를 나타냈다. 서브미크론 충전제를 포함하지만 가교제가 없는 비교예 3은 가압되지 않은(0 psi) 경우 열 임피던스의 실질적인 증가를 나타냈다. 따라서, 실시예 1은 어느 비교예보다 더 우수한 신뢰도를 나타내었다.As shown in Table 3, only Example 1 comprising submicron thermally conductive filler and crosslinker provided good results in both pressurized (35 psi) and unpressurized (0 psi) results. The thermal impedance of Example 1 was relatively constant even after 20 minutes at 26 占 폚. Comparative Examples 1 and 2, which included a crosslinker but no submicron filler, showed an increase in thermal impedance at pressurized (35 psi) and a substantial increase in thermal impedance at unpressurized (0 psi). Comparative Example 3, which includes a submicron filler but no crosslinker, showed a substantial increase in thermal impedance when unpressurized (0 psi). Thus, Example 1 exhibited better reliability than either comparative example.

본 발명은 예시적인 디자인을 갖는 것으로 설명되었지만, 본 발명은 본 개시의 사상 및 범위 내에서 추가로 변형될 수 있다. 따라서, 본 출원은 이의 일반 원리를 사용하여 본 발명의 임의의 변형, 사용 또는 적용을 포괄하고자 한다. 또한, 본 출원은 본 발명이 속하는 기술분야에 알려지거나 통상적인 수행으로 나오는 본 발명으로부터의 이탈을 포괄하는 것으로 의도되며, 이는 첨부된 청구범위의 범위 내에 포함된다.While the present invention has been described as having an exemplary design, the present invention may be further modified within the spirit and scope of the present disclosure. Accordingly, this application is intended to cover any variations, uses, or adaptations of the invention using its general principles. This application is also intended to cover such departures from the present invention as come within known or customary practice in the art to which this invention pertains and which fall within the scope of the appended claims.

Claims (10)

1중량% 내지 16중량%의 적어도 하나의 폴리머 매트릭스 물질;
0.5중량% 내지 8중량%의 적어도 하나의 상 변화 물질;
0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제; 및
약 1미크론 이하의 입자 직경을 갖는 제1 복수의 입자를 포함하는 적어도 하나의 열 전도성 충전제를 포함하며; 여기서 적어도 하나의 열 전도성 충전제는 열 계면 물질의 총 중량의 80중량%로 포함되는, 열 계면 물질.
1% to 16% by weight of at least one polymer matrix material;
From 0.5% to 8% by weight of at least one phase change material;
0.1% to 1% by weight of at least one amine or amine based cross-linking agent; And
At least one thermally conductive filler comprising a first plurality of particles having a particle diameter of about 1 micron or less; Wherein the at least one thermally conductive filler comprises 80 wt% of the total weight of the thermal interface material.
제1항에 있어서,
제1 복수의 입자는 약 0.1미크론 내지 약 1미크론의 직경을 갖는 산화 아연의 입자를 포함하는, 열 계면 물질.
The method according to claim 1,
Wherein the first plurality of particles comprises particles of zinc oxide having a diameter of from about 0.1 micron to about 1 micron.
제1항에 있어서,
적어도 하나의 열 전도성 충전제는 약 1미크론 이상의 입자 직경을 갖는 제2 복수의 입자를 포함하는, 열 계면 물질.
The method according to claim 1,
Wherein the at least one thermally conductive filler comprises a second plurality of particles having a particle diameter of at least about 1 micron.
제3항에 있어서,
제2 복수의 입자는 약 2미크론 내지 약 12미크론의 입자 직경을 갖는 알루미늄의 입자를 포함하는, 열 계면 물질.
The method of claim 3,
Wherein the second plurality of particles comprises particles of aluminum having a particle diameter of from about 2 microns to about 12 microns.
제1항에 있어서,
아민 또는 아민계 가교제는 알킬화 멜라민 수지인, 열 계면 물질.
The method according to claim 1,
Wherein the amine or amine based crosslinking agent is an alkylated melamine resin.
제1항에 있어서,
열 계면 물질은 열 계면 물질의 총 중량을 기준으로, 1중량% 내지 8중량%의 적어도 하나의 폴리머 매트릭스 물질; 0.5중량% 내지 5중량%의 적어도 하나의 상 변화 물질; 0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제; 및 91중량% 내지 95중량%의 적어도 하나의 열 전도성 충전제를 포함하는, 열 계면 물질.
The method according to claim 1,
The thermal interface material may comprise from 1 wt% to 8 wt% of at least one polymer matrix material, based on the total weight of the thermal interface material; From 0.5% to 5% by weight of at least one phase change material; 0.1% to 1% by weight of at least one amine or amine based cross-linking agent; And 91% to 95% by weight of at least one thermally conductive filler.
제1항에 있어서,
적어도 하나의 커플링제, 산화 방지제, 이온 스캐빈저, 또는 틱소트로픽제(thixotropic agent)를 추가로 포함하는, 열 계면 물질.
The method according to claim 1,
A thermal interface material further comprising at least one coupling agent, an antioxidant, an ion scavenger, or a thixotropic agent.
열 싱크;
전자 칩;
상기 열 싱크와 전자 칩 사이에 수직 배향으로 위치한 열 계면 물질로서,
1중량% 내지 16중량%의 적어도 하나의 폴리머 매트릭스 물질;
0.5중량% 내지 8중량%의 적어도 하나의 상 변화 물질;
0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제; 및
약 0.1미크론 내지 약 1미크론 입자의 직경을 갖는 복수의 산화 아연 입자 및 약 2미크론 내지 약 12의 입자 직경을 갖는 복수의 알루미늄 입자를 포함하는 적어도 하나의 열 전도성 충전제를 포함하며; 여기서 상기 적어도 하나의 열 전도성 충전제는 열 계면 물질의 총 중량의 적어도 80중량%로 포함되는, 열 계면 물질
을 포함하는, 전자 부품.
Heat sink;
Electronic chip;
A thermal interface material positioned in a vertical orientation between the heat sink and the electronic chip,
1% to 16% by weight of at least one polymer matrix material;
From 0.5% to 8% by weight of at least one phase change material;
0.1% to 1% by weight of at least one amine or amine based cross-linking agent; And
At least one thermally conductive filler comprising a plurality of zinc oxide particles having a diameter of from about 0.1 micron to about 1 micron particle and a plurality of aluminum particles having a particle diameter of from about 2 microns to about 12; Wherein the at least one thermally conductive filler comprises at least 80 weight percent of the total weight of the thermal interface material,
And an electronic component.
제8항에 있어서,
아민 또는 아민계 가교제는 알킬화 멜라민 수지인, 전자 부품.
9. The method of claim 8,
Wherein the amine or amine-based crosslinking agent is an alkylated melamine resin.
제8항에 있어서,
적어도 하나의 열 전도성 충전제는 열 계면 물질의 총 중량을 기준으로, 1중량% 내지 8중량%의 적어도 하나의 폴리머 매트릭스 물질; 0.5중량% 내지 5중량%의 적어도 하나의 상 변화 물질; 0.1중량% 내지 1중량%의 적어도 하나의 아민 또는 아민계 가교제; 및 91중량% 내지 95중량%의 적어도 하나의 열 전도성 충전제를 포함하는, 전자 부품.
9. The method of claim 8,
Wherein the at least one thermally conductive filler comprises from 1% to 8% by weight, based on the total weight of the thermal interface material, of at least one polymer matrix material; From 0.5% to 5% by weight of at least one phase change material; 0.1% to 1% by weight of at least one amine or amine based cross-linking agent; And 91% to 95% by weight of at least one thermally conductive filler.
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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10155894B2 (en) 2014-07-07 2018-12-18 Honeywell International Inc. Thermal interface material with ion scavenger
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US10567084B2 (en) * 2017-12-18 2020-02-18 Honeywell International Inc. Thermal interface structure for optical transceiver modules
US11162744B2 (en) * 2018-01-08 2021-11-02 Hamilton Sundstrand Corporation Heat sink phase change material
CN108365034B (en) * 2018-01-19 2020-07-31 合肥晶澳太阳能科技有限公司 Heat dissipation layer containing phase-change material, preparation method of heat dissipation layer and solar photovoltaic module
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
CN112771662A (en) * 2018-09-27 2021-05-07 汉高知识产权控股有限责任公司 Wear resistant coating for thermal interfaces
US10679923B1 (en) 2019-01-09 2020-06-09 Toyota Motor Engineering & Manufacturing North America, Inc. Encapsulated phase change porous layer
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
US11037860B2 (en) * 2019-06-27 2021-06-15 International Business Machines Corporation Multi layer thermal interface material
JP7347273B2 (en) * 2020-03-11 2023-09-20 住友金属鉱山株式会社 thermally conductive composition
CN111303821A (en) * 2020-03-14 2020-06-19 广东力王新材料有限公司 Single-component heat storage potting material
US11774190B2 (en) 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
US20220025241A1 (en) * 2020-07-27 2022-01-27 Google Llc Thermal interface material and method for making the same
WO2022031654A1 (en) * 2020-08-03 2022-02-10 Henkel IP & Holding GmbH Hydrosilation curable compositions
CN111987266A (en) * 2020-09-02 2020-11-24 博罗县矩之阵新能源有限公司 Heat storage support based on phase-change material and battery module

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002327116A (en) * 2001-05-01 2002-11-15 Shin Etsu Chem Co Ltd Thermoconductive silicone composition and semiconductor device
KR20040081453A (en) * 2002-01-14 2004-09-21 허니웰 인터내셔널 인코포레이티드 Thermal Interface Materials
JP2009102577A (en) * 2007-10-25 2009-05-14 Polymatech Co Ltd Thermal conductive composition
KR20110053441A (en) * 2008-09-01 2011-05-23 다우 코닝 도레이 캄파니 리미티드 Thermally conductive silicone composition and semiconductor device
WO2015120773A1 (en) * 2014-02-13 2015-08-20 Honeywell International Inc. Compressible thermal interface materials
WO2016004565A1 (en) * 2014-07-07 2016-01-14 Honeywell International Inc. Thermal interface material with ion scavenger

Family Cites Families (393)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1655133A (en) 1926-11-09 1928-01-03 Charles A Clase Inside micrometer gauge
US2451600A (en) 1945-02-03 1948-10-19 Atlantic Refining Co Tube gauge
US2810203A (en) 1954-08-06 1957-10-22 Sun Oil Co Tube calipering device
GB989845A (en) 1963-05-03 1965-04-22 Polymer Corp Improved butyl rubber-polyolefine blends
US4006530A (en) 1974-04-09 1977-02-08 Schlumberger Technology Corporation Apparatus for measuring the diameter of a well bore
JPS5314131A (en) 1975-05-02 1978-02-08 Nobuyasu Doi Luster tinnlead alloy electroplating method
CH588683A5 (en) 1975-07-28 1977-06-15 Concast Ag
US4180498A (en) 1976-07-30 1979-12-25 Ciba-Geigy Corporation Hindered phenyl phosphites
CH630174A5 (en) 1978-04-05 1982-05-28 Hans Meyer INTERIOR MEASURING DEVICE.
DE2933870A1 (en) 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München N.N'-BIS-SALICYLOYL-HYDRAZINE AS A METAL DETECTOR.
FR2518738B1 (en) 1981-12-23 1985-10-18 Flopetrol Etu Fabrications DEVICE FOR MEASURING INTERNAL DIMENSIONS OF A TUBE, PARTICULARLY IN A WELL AND METHOD OF MEASURING DISPLACEMENT APPLICABLE TO SUCH A DEVICE
IT1157405B (en) 1982-01-15 1987-02-11 Finike Italiana Marposs COMPARATOR FOR THE CONTROL OF LINEAR DIMENSIONS OF MECHANICAL PIECES
JPS5967387A (en) 1982-10-08 1984-04-17 Hiyougoken Tin, lead and tin-lead alloy plating bath
US4565610A (en) 1983-12-22 1986-01-21 Learonal, Inc. Bath and process for plating lead and lead/tin alloys
US4604424A (en) 1986-01-29 1986-08-05 Dow Corning Corporation Thermally conductive polyorganosiloxane elastomer composition
JPH01500147A (en) 1986-04-23 1989-01-19 バッテル・ディベロプメント・コーポレーション Chromatographic equipment and methods
FR2607431B1 (en) 1986-12-02 1989-03-10 Clextral METHOD AND INSTALLATION FOR MOUNTING AND DISASSEMBLING THE SCREWS OF AN EXTRUSION MACHINE
US4832781A (en) 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
US4816086A (en) 1988-04-25 1989-03-28 Armstrong World Industries, Inc. Compositions useful in copper oxidation, and a method to prepare copper oxidation solutions
US4910050A (en) 1988-08-04 1990-03-20 Hughes Aircraft Company Method and composition for providing electrostatic discharge protection for spacecraft
JP2611364B2 (en) 1988-08-26 1997-05-21 上村工業株式会社 Electroless tin plating bath and electroless tin plating method
EP0433816B1 (en) 1989-12-18 1994-04-20 Riedel-De Haen Aktiengesellschaft Process and device for the preparation of a solution of a non-ferrous metal sulphonate
JP2745438B2 (en) * 1990-07-13 1998-04-28 株式会社荏原製作所 Heat transfer material and heating element for heating and heating device using the same
US5403580A (en) 1991-01-22 1995-04-04 Dow Corning Corporation Organosilicon gels and method of making
US5167851A (en) 1991-04-22 1992-12-01 Thermoset Plastics, Inc. Hydrophilic thermally conductive grease
US5084099A (en) * 1991-06-17 1992-01-28 Tektronix, Inc. Phase change ink colorants and phase change inks produced therefrom
JPH0543116A (en) 1991-08-15 1993-02-23 Ricoh Co Ltd Copy tray
US5294923A (en) 1992-01-31 1994-03-15 Baker Hughes Incorporated Method and apparatus for relaying downhole data to the surface
JP3175979B2 (en) 1992-09-14 2001-06-11 株式会社東芝 Resin-sealed semiconductor device
US6197859B1 (en) 1993-06-14 2001-03-06 The Bergquist Company Thermally conductive interface pads for electronic devices
JP3305720B2 (en) 1993-07-06 2002-07-24 株式会社東芝 Heat dissipation sheet
US6090484A (en) 1995-05-19 2000-07-18 The Bergquist Company Thermally conductive filled polymer composites for mounting electronic devices and method of application
US5562814A (en) 1995-09-01 1996-10-08 Dale Electronics, Inc. Sludge-limiting tin and/or lead electroplating bath
PT876427E (en) 1996-01-22 2003-01-31 Dow Chemical Co MIXTURES OF POLYOLEFINIC ELASTOMERS PRESENTING APPROPRIATE CHARACTERISTICS
AU723258B2 (en) 1996-04-29 2000-08-24 Parker-Hannifin Corporation Conformal thermal interface material for electronic components
US5950066A (en) 1996-06-14 1999-09-07 The Bergquist Company Semisolid thermal interface with low flow resistance
US5738936A (en) 1996-06-27 1998-04-14 W. L. Gore & Associates, Inc. Thermally conductive polytetrafluoroethylene article
US5930115A (en) 1996-08-26 1999-07-27 Compaq Computer Corp. Apparatus, method and system for thermal management of a semiconductor device
US5816699A (en) 1997-06-13 1998-10-06 Entek Manufacturing Inc. Twin screw extruder barrel with an easily removable seamless insert having a wear and corrosion resistant lining
JP3662715B2 (en) 1997-06-16 2005-06-22 アルプス電気株式会社 Conductive material, conductive paste and electronic device
JP4015722B2 (en) 1997-06-20 2007-11-28 東レ・ダウコーニング株式会社 Thermally conductive polymer composition
US6432497B2 (en) 1997-07-28 2002-08-13 Parker-Hannifin Corporation Double-side thermally conductive adhesive tape for plastic-packaged electronic components
US6096414A (en) 1997-11-25 2000-08-01 Parker-Hannifin Corporation High dielectric strength thermal interface material
FR2775481B1 (en) 1998-02-27 2003-10-24 Rhodia Chimie Sa CROSS-LINKABLE ADHESIVE SILICONE COMPOSITION AND USE THEREOF FOR BONDING VARIOUS SUBSTRATES
JP3948642B2 (en) 1998-08-21 2007-07-25 信越化学工業株式会社 Thermally conductive grease composition and semiconductor device using the same
US20040069454A1 (en) 1998-11-02 2004-04-15 Bonsignore Patrick V. Composition for enhancing thermal conductivity of a heat transfer medium and method of use thereof
US6432320B1 (en) 1998-11-02 2002-08-13 Patrick Bonsignore Refrigerant and heat transfer fluid additive
JP2000143808A (en) 1998-11-17 2000-05-26 Fuji Kobunshi Kogyo Kk Heat conductive, electrical insulating silicone gel composition
US6299721B1 (en) 1998-12-14 2001-10-09 Gould Electronics Incl Coatings for improved resin dust resistance
EP1149519B1 (en) 1998-12-15 2004-11-03 Parker Hannifin Corporation Method of applying a phase change thermal interface material
US6238596B1 (en) * 1999-03-09 2001-05-29 Johnson Matthey Electronics, Inc. Compliant and crosslinkable thermal interface materials
US6165612A (en) 1999-05-14 2000-12-26 The Bergquist Company Thermally conductive interface layers
US6391442B1 (en) 1999-07-08 2002-05-21 Saint-Gobain Performance Plastics Corporation Phase change thermal interface material
US20070241303A1 (en) 1999-08-31 2007-10-18 General Electric Company Thermally conductive composition and method for preparing the same
US6605238B2 (en) 1999-09-17 2003-08-12 Honeywell International Inc. Compliant and crosslinkable thermal interface materials
US6706219B2 (en) 1999-09-17 2004-03-16 Honeywell International Inc. Interface materials and methods of production and use thereof
US6975944B1 (en) 1999-09-28 2005-12-13 Alpha Mos Method and apparatus for monitoring materials used in electronics
US6496373B1 (en) 1999-11-04 2002-12-17 Amerasia International Technology, Inc. Compressible thermally-conductive interface
US6395811B1 (en) * 1999-11-11 2002-05-28 3D Systems, Inc. Phase change solid imaging material
JP2001139818A (en) 1999-11-12 2001-05-22 Dow Corning Toray Silicone Co Ltd Thermally conductive silicone rubber composition
US6451422B1 (en) 1999-12-01 2002-09-17 Johnson Matthey, Inc. Thermal interface materials
US6797382B2 (en) * 1999-12-01 2004-09-28 Honeywell International Inc. Thermal interface materials
DE19959262A1 (en) 1999-12-09 2001-06-21 Altoflex S A Conductive pasty material and its use
US7078109B2 (en) 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
US7369411B2 (en) 2000-02-25 2008-05-06 Thermagon, Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US6940721B2 (en) 2000-02-25 2005-09-06 Richard F. Hill Thermal interface structure for placement between a microelectronic component package and heat sink
US6372997B1 (en) 2000-02-25 2002-04-16 Thermagon, Inc. Multi-layer structure and method for forming a thermal interface with low contact resistance between a microelectronic component package and heat sink
US6797758B2 (en) 2000-04-05 2004-09-28 The Bergquist Company Morphing fillers and thermal interface materials
US6649325B1 (en) 2001-05-25 2003-11-18 The Bergquist Company Thermally conductive dielectric mounts for printed circuitry and semi-conductor devices and method of preparation
US6339120B1 (en) 2000-04-05 2002-01-15 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US6984685B2 (en) 2000-04-05 2006-01-10 The Bergquist Company Thermal interface pad utilizing low melting metal with retention matrix
US20030207128A1 (en) * 2000-04-10 2003-11-06 Tomoaki Uchiya Thermally conductive sheet
US6400565B1 (en) 2000-04-21 2002-06-04 Dell Products L.P. Thermally conductive interface member
EP1149864A1 (en) 2000-04-28 2001-10-31 STMicroelectronics S.r.l. Polymeric composition for packaging a semiconductor electronic device and packaging obtained therefrom
US6616999B1 (en) 2000-05-17 2003-09-09 Raymond G. Freuler Preapplicable phase change thermal interface pad
US6500891B1 (en) 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
DE10196259T1 (en) 2000-05-31 2003-05-15 Honeywell Int Inc filling
US6506332B2 (en) 2000-05-31 2003-01-14 Honeywell International Inc. Filling method
GB0014622D0 (en) 2000-06-16 2000-08-09 D C Heat Limited Clothing or footwear with heating element
JP2002003830A (en) 2000-06-26 2002-01-09 Denki Kagaku Kogyo Kk Highly heat conductive composition and its application
US6475962B1 (en) 2000-09-14 2002-11-05 Aos Thermal Compounds, Llc Dry thermal grease
US6610635B2 (en) 2000-09-14 2003-08-26 Aos Thermal Compounds Dry thermal interface material
US20040206941A1 (en) 2000-11-22 2004-10-21 Gurin Michael H. Composition for enhancing conductivity of a carrier medium and method of use thereof
US20030151030A1 (en) 2000-11-22 2003-08-14 Gurin Michael H. Enhanced conductivity nanocomposites and method of use thereof
US6573328B2 (en) 2001-01-03 2003-06-03 Loctite Corporation Low temperature, fast curing silicone compositions
EP1354353B1 (en) 2001-01-22 2007-05-30 Parker Hannifin Corporation Clean release, phase change thermal interface
KR20020073434A (en) 2001-03-16 2002-09-26 쉬플리 캄파니, 엘.엘.씨. Tin plating
US7060747B2 (en) 2001-03-30 2006-06-13 Intel Corporation Chain extension for thermal materials
US6469379B1 (en) 2001-03-30 2002-10-22 Intel Corporation Chain extension for thermal materials
US7608324B2 (en) 2001-05-30 2009-10-27 Honeywell International Inc. Interface materials and methods of production and use thereof
JP4237505B2 (en) 2001-05-30 2009-03-11 ハネウエル・インターナシヨナル・インコーポレーテツド Interface material and method for producing and using the same
US6818301B2 (en) 2001-06-01 2004-11-16 Psiloquest Inc. Thermal management with filled polymeric polishing pads and applications therefor
US7038009B2 (en) 2001-08-31 2006-05-02 Cool Shield, Inc. Thermally conductive elastomeric pad and method of manufacturing same
CN1260399C (en) 2001-08-31 2006-06-21 罗姆和哈斯电子材料有限责任公司 Electrolytic tin-plating solution and method for electroplating
FR2831548B1 (en) 2001-10-31 2004-01-30 Rhodia Chimie Sa CROSSLINKABLE ADHESIVE SILICONE COMPOSITION COMPRISING AS A THIXOTROPIC AGENT A COMPOUND WITH CYCLIC AMINE FUNCTION CARRIED BY A SILOXANIC CHAIN
US20030112603A1 (en) 2001-12-13 2003-06-19 Roesner Arlen L. Thermal interface
US6620515B2 (en) 2001-12-14 2003-09-16 Dow Corning Corporation Thermally conductive phase change materials
KR100479857B1 (en) 2001-12-28 2005-03-30 제일모직주식회사 Silicon resin composition for packaging semiconductor
US6597575B1 (en) 2002-01-04 2003-07-22 Intel Corporation Electronic packages having good reliability comprising low modulus thermal interface materials
JP3844125B2 (en) 2002-01-22 2006-11-08 信越化学工業株式会社 Heat dissipating member, manufacturing method thereof and laying method thereof
AU2002335883A1 (en) 2002-02-06 2003-09-02 Parker Hannifin Corporation Thermal management materials having a phase change dispersion
US6946190B2 (en) 2002-02-06 2005-09-20 Parker-Hannifin Corporation Thermal management materials
US6926955B2 (en) 2002-02-08 2005-08-09 Intel Corporation Phase change material containing fusible particles as thermally conductive filler
US7846778B2 (en) 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US20030159938A1 (en) 2002-02-15 2003-08-28 George Hradil Electroplating solution containing organic acid complexing agent
US20040149587A1 (en) 2002-02-15 2004-08-05 George Hradil Electroplating solution containing organic acid complexing agent
JP2004002970A (en) 2002-03-05 2004-01-08 Shipley Co Llc Restriction of tin loss caused by oxidation in tin or tin alloy electroplating solution
US6913686B2 (en) 2002-12-10 2005-07-05 Advanced Technology Materials, Inc. Methods for analyzing solder plating solutions
US20030171487A1 (en) 2002-03-11 2003-09-11 Tyco Electronics Corporation Curable silicone gum thermal interface material
US6815486B2 (en) 2002-04-12 2004-11-09 Dow Corning Corporation Thermally conductive phase change materials and methods for their preparation and use
US7208191B2 (en) 2002-04-23 2007-04-24 Freedman Philip D Structure with heat dissipating device and method
US20030203181A1 (en) 2002-04-29 2003-10-30 International Business Machines Corporation Interstitial material with enhanced thermal conductance for semiconductor device packaging
US7147367B2 (en) 2002-06-11 2006-12-12 Saint-Gobain Performance Plastics Corporation Thermal interface material with low melting alloy
US20030230403A1 (en) 2002-06-14 2003-12-18 Webb Brent J. Conductive thermal interface and compound
US6791839B2 (en) 2002-06-25 2004-09-14 Dow Corning Corporation Thermal interface materials and methods for their preparation and use
EP1531985A4 (en) 2002-07-15 2008-03-19 Honeywell Int Inc Thermal interconnect and interface systems, methods of production and uses thereof
JP4016326B2 (en) 2002-08-02 2007-12-05 石原薬品株式会社 Electroless tin plating bath
US6657297B1 (en) 2002-08-15 2003-12-02 The Bergquist Company Flexible surface layer film for delivery of highly filled or low cross-linked thermally conductive interface pads
US6761932B2 (en) 2002-08-23 2004-07-13 Basf Corporation Method to improve adhesion of primers to substrates
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US6908682B2 (en) 2002-09-12 2005-06-21 3M Innovative Properties Company Photocured silicone sealant having improved adhesion to plastic
US6911077B2 (en) 2002-09-25 2005-06-28 The Intertech Group, Inc. Fiber reinforced cementitious material
US6783692B2 (en) 2002-10-17 2004-08-31 Dow Corning Corporation Heat softening thermally conductive compositions and methods for their preparation
US7608326B2 (en) 2002-10-21 2009-10-27 Laird Technologies, Inc. Thermally conductive EMI shield
US6956739B2 (en) 2002-10-29 2005-10-18 Parker-Hannifin Corporation High temperature stable thermal interface material
CN1296994C (en) 2002-11-14 2007-01-24 清华大学 A thermal interfacial material and method for manufacturing same
FR2848215B1 (en) 2002-12-04 2006-08-04 Rhodia Chimie Sa SILICONE ELASTOMER COMPOSITION, ADHESIVE, MONOCOMPONENT AND CROSS-LINKABLE BY POLYADDITION
US7326042B2 (en) 2002-12-24 2008-02-05 Bostik Findley, Inc. Apparatus for packaging hot melt adhesives using a mold and carrier
JP4288469B2 (en) 2003-03-12 2009-07-01 石原薬品株式会社 Electroless tin plating bath for preventing copper erosion and method for preventing copper erosion
US6924027B2 (en) 2003-03-31 2005-08-02 Intel Corporation Phase change thermal interface materials including exfoliated clay
JP2006522491A (en) * 2003-04-02 2006-09-28 ハネウエル・インターナシヨナル・インコーポレーテツド Thermal interconnect and interface system, manufacturing method, and method of use
US7013965B2 (en) 2003-04-29 2006-03-21 General Electric Company Organic matrices containing nanomaterials to enhance bulk thermal conductivity
US6901675B2 (en) 2003-05-27 2005-06-07 Bristol Compressors, Inc. System and method for sizing a center bore of a laminated rotor
US7744991B2 (en) 2003-05-30 2010-06-29 3M Innovative Properties Company Thermally conducting foam interface materials
US7229683B2 (en) 2003-05-30 2007-06-12 3M Innovative Properties Company Thermal interface materials and method of making thermal interface materials
TWI251320B (en) 2003-07-04 2006-03-11 Fuji Polymer Ind Thermal conductive composition, a heat-dissipating putty sheet and heat-dissipating structure using the same
JP4337433B2 (en) 2003-07-08 2009-09-30 パナソニック株式会社 Aging method and aging apparatus for plasma display panel
KR100981571B1 (en) 2003-07-26 2010-09-10 삼성전자주식회사 System and method for transmitting/receiving signal in mobile communication system using multiple input multiple output adaptive antenna array scheme
US7253523B2 (en) 2003-07-29 2007-08-07 Intel Corporation Reworkable thermal interface material
US6951182B2 (en) 2003-07-29 2005-10-04 Onweller Arthur E Marine Mooring Line Vermin Shield
US7408787B2 (en) * 2003-07-30 2008-08-05 Intel Corporation Phase change thermal interface materials including polyester resin
US6985690B2 (en) 2003-07-31 2006-01-10 Xerox Corporation Fuser and fixing members containing PEI-PDMS block copolymers
US6874573B2 (en) 2003-07-31 2005-04-05 National Starch And Chemical Investment Holding Corporation Thermal interface material
JP2005060822A (en) 2003-08-08 2005-03-10 Rohm & Haas Electronic Materials Llc Electroplating for composite substrate
CN1580116A (en) 2003-08-15 2005-02-16 台盐实业股份有限公司 Radiating interface material composition
US20050049350A1 (en) 2003-08-25 2005-03-03 Sandeep Tonapi Thin bond-line silicone adhesive composition and method for preparing the same
US8039961B2 (en) 2003-08-25 2011-10-18 Samsung Electronics Co., Ltd. Composite carbon nanotube-based structures and methods for removing heat from solid-state devices
US7550097B2 (en) 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
DE10347378A1 (en) 2003-10-07 2005-05-12 Huhtamaki Alf Zweigniederlassu container
US20050072334A1 (en) 2003-10-07 2005-04-07 Saint-Gobain Performance Plastics, Inc. Thermal interface material
JP4828429B2 (en) 2003-11-05 2011-11-30 ダウ・コーニング・コーポレイション Thermally conductive grease, and method and device using the grease
JP4219793B2 (en) 2003-11-25 2009-02-04 信越化学工業株式会社 Silicone grease composition for heat dissipation
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7119143B2 (en) 2004-03-04 2006-10-10 Laird Technologies, Inc. Silicone pads for electronics thermal management
US20050228097A1 (en) 2004-03-30 2005-10-13 General Electric Company Thermally conductive compositions and methods of making thereof
JP5068997B2 (en) 2004-04-01 2012-11-07 株式会社カネカ One-part curable composition
EP1746133B1 (en) 2004-05-07 2019-03-06 Kaneka Corporation Curable composition improved in adhesiveness
JP4501526B2 (en) 2004-05-14 2010-07-14 住友化学株式会社 High thermal conductive resin composition
WO2005111146A1 (en) 2004-05-17 2005-11-24 Techno Polymer Co., Ltd. Thermal conductive resin composition, method for producing same and housing
JP4480457B2 (en) 2004-05-17 2010-06-16 株式会社カネカ Curable composition
JP5005538B2 (en) 2004-05-20 2012-08-22 モーメンティブ・パフォーマンス・マテリアルズ・インク Nanomaterial-containing organic matrix for increasing bulk thermal conductivity
US20050287362A1 (en) 2004-06-23 2005-12-29 3M Innovative Properties Company Halogen free tapes & method of making same
WO2006017193A1 (en) 2004-07-13 2006-02-16 Henkel Corporation Novel packaging solution for highly filled phase-change thermal interface material
JP5305656B2 (en) 2004-08-23 2013-10-02 モーメンティブ・パフォーマンス・マテリアルズ・インク Thermally conductive composition and method for producing the same
ES2367796T3 (en) 2004-08-31 2011-11-08 Basf Se STABILIZATION OF ORGANIC MATERIALS.
US20060060980A1 (en) 2004-09-22 2006-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Ic package having ground ic chip and method of manufacturing same
EP1805256A1 (en) 2004-10-28 2007-07-11 Dow Corning Corporation Conductive curable compositions
US7328547B2 (en) 2004-10-29 2008-02-12 Bostik, Inc. Process for packaging plastic materials like hot melt adhesives
US20060094809A1 (en) 2004-11-02 2006-05-04 Simone Davide L Electrically and thermally conductive silicone adhesive compositions
WO2006051798A1 (en) 2004-11-10 2006-05-18 Kaneka Corporation Curable composition
US8058190B2 (en) 2005-02-01 2011-11-15 Dow Corning Corporation Curable coating compositions
US7241707B2 (en) 2005-02-17 2007-07-10 Intel Corporation Layered films formed by controlled phase segregation
CN100543103C (en) 2005-03-19 2009-09-23 清华大学 Heat interfacial material and preparation method thereof
US20060228542A1 (en) * 2005-04-08 2006-10-12 Saint-Gobain Performance Plastics Corporation Thermal interface material having spheroidal particulate filler
CN100404242C (en) 2005-04-14 2008-07-23 清华大学 Heat interface material and its making process
US20060260948A2 (en) 2005-04-14 2006-11-23 Enthone Inc. Method for electrodeposition of bronzes
KR100934401B1 (en) 2005-04-28 2009-12-29 멜텍스 가부시키가이샤 A chip component having a tin plating liquid, a tin plating method using the tin plating liquid, a tin plating liquid adjusting method, and a tin plating layer formed using the tin plating liquid.
US20070116626A1 (en) 2005-05-11 2007-05-24 Molecular Nanosystems, Inc. Methods for forming carbon nanotube thermal pads
US20060264566A1 (en) 2005-05-19 2006-11-23 Wacker Chemical Corporation HCR room temperature curable rubber composition
CA2609712C (en) 2005-05-26 2015-04-07 Nanocomp Technologies, Inc. Systems and methods for thermal management of electronic components
JP2007002002A (en) 2005-06-21 2007-01-11 Idemitsu Kosan Co Ltd Heat conductive resin composition
US20070013054A1 (en) 2005-07-12 2007-01-18 Ruchert Brian D Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages
US20070051773A1 (en) * 2005-09-02 2007-03-08 Ruchert Brian D Thermal interface materials, methods of preparation thereof and their applications
JP4860229B2 (en) * 2005-10-11 2012-01-25 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Thermally conductive grease composition
EP1839469A2 (en) * 2005-11-01 2007-10-03 Techfilm, LLC Thermal interface material with multiple size distribution thermally conductive fillers
JP2007131798A (en) 2005-11-14 2007-05-31 Kaneka Corp Curable composition
CN1970666A (en) 2005-11-24 2007-05-30 鸿富锦精密工业(深圳)有限公司 Heat-conductive glue
CN1978582A (en) 2005-12-09 2007-06-13 富准精密工业(深圳)有限公司 Heat-conductive cream and electronic device using same
US7465605B2 (en) 2005-12-14 2008-12-16 Intel Corporation In-situ functionalization of carbon nanotubes
US7262369B1 (en) 2006-03-09 2007-08-28 Laird Technologies, Inc. Combined board level EMI shielding and thermal management
JP4933094B2 (en) 2005-12-27 2012-05-16 信越化学工業株式会社 Thermally conductive silicone grease composition
US7964542B2 (en) 2006-01-12 2011-06-21 International Business Machines Corporation Enhanced thermo-oxidative stability thermal interface compositions and use thereof in microelectronics assembly
US20070166554A1 (en) 2006-01-18 2007-07-19 Ruchert Brian D Thermal interconnect and interface systems, methods of production and uses thereof
US20070179232A1 (en) 2006-01-30 2007-08-02 National Starch And Chemical Investment Holding Corporation Thermal Interface Material
US7440281B2 (en) 2006-02-01 2008-10-21 Apple Inc. Thermal interface apparatus
WO2007106209A2 (en) * 2006-02-23 2007-09-20 Dow Corning Corporation Thermally conductive grease and methods and devices in which said grease is used
US7463496B2 (en) 2006-03-09 2008-12-09 Laird Technologies, Inc. Low-profile board level EMI shielding and thermal management apparatus and spring clips for use therewith
US20070219312A1 (en) 2006-03-17 2007-09-20 Jennifer Lynn David Silicone adhesive composition and method for preparing the same
US7955900B2 (en) 2006-03-31 2011-06-07 Intel Corporation Coated thermal interface in integrated circuit die
TWI313695B (en) 2006-04-20 2009-08-21 Taiwan Textile Res Inst Melted-spinning grains containing thermal-stable phase-change polymer and preparation method thereof
US7514485B2 (en) 2006-06-20 2009-04-07 Chemtura Corporation Compatibilizers for composites of PVC and cellulosic materials
JP2008050555A (en) 2006-07-24 2008-03-06 Sumitomo Chemical Co Ltd Thermoconductive resin composition and use thereof
US20080023665A1 (en) 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
JP2010502785A (en) 2006-09-05 2010-01-28 スリーエム イノベイティブ プロパティズ カンパニー Thermally conductive grease
JP2008063412A (en) 2006-09-06 2008-03-21 Showa Denko Kk Heat-conductive resin composition and sheet
JP5231236B2 (en) 2006-10-17 2013-07-10 電気化学工業株式会社 Grease
KR100820902B1 (en) 2006-11-08 2008-04-11 조인셋 주식회사 Multilayer heat conductive pad
TWI344196B (en) * 2006-11-15 2011-06-21 Ind Tech Res Inst Melting temperature adjustable metal thermal interface materials and use thereof
US7554793B2 (en) 2006-11-16 2009-06-30 Kemet Electronics Corporation Low temperature curable conductive adhesive and capacitors formed thereby
US8431647B2 (en) 2006-12-27 2013-04-30 Bluestar Silicones France Sas Adhesive silicone compositions and adhesive bonding/seaming therewith
EP2115065B1 (en) * 2007-02-20 2016-05-11 Dow Corning Corporation Filler treating agents based on hydrogen bonding polyorganosiloxanes
CN101067030A (en) 2007-03-30 2007-11-07 广东华南精细化工研究院有限公司 Composite heat resisting antioxidant for polyolefin and its production process and application
EP2134823A1 (en) 2007-04-02 2009-12-23 3M Innovative Properties Company Thermal grease article and method
US8431655B2 (en) 2007-04-09 2013-04-30 Designer Molecules, Inc. Curatives for epoxy compositions
GB0707176D0 (en) 2007-04-16 2007-05-23 Dow Corning Hydrosilylation curable compositions
US7462294B2 (en) 2007-04-25 2008-12-09 International Business Machines Corporation Enhanced thermal conducting formulations
US7646778B2 (en) 2007-04-27 2010-01-12 Cisco Technology, Inc. Support of C-tagged service interface in an IEEE 802.1ah bridge
US20080291634A1 (en) 2007-05-22 2008-11-27 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
US7765811B2 (en) 2007-06-29 2010-08-03 Laird Technologies, Inc. Flexible assemblies with integrated thermoelectric modules suitable for use in extracting power from or dissipating heat from fluid conduits
FR2919615A1 (en) 2007-08-02 2009-02-06 Bluestar Silicones France Soc ADHESIVE SILICONE ELASTOMERIC COMPOSITION
DE102007037435B4 (en) 2007-08-08 2012-03-22 Sgl Carbon Se laminate
JP5269366B2 (en) 2007-08-22 2013-08-21 コスモ石油ルブリカンツ株式会社 Heat-resistant thermal grease
CN101372614B (en) 2007-08-24 2011-06-08 清华大学 Carbon nano-tube array composite heat-conducting fin and manufacturing method thereof
KR20150043545A (en) 2007-08-31 2015-04-22 캐보트 코포레이션 Thermal interface materials
JP5535915B2 (en) 2007-09-12 2014-07-02 スモルテック アーベー Connection and bonding of adjacent layers by nanostructures
US8586650B2 (en) 2007-09-14 2013-11-19 Henkel US IP LLC Thermally conductive composition
US8112884B2 (en) 2007-10-08 2012-02-14 Honeywell International Inc. Method for providing an efficient thermal transfer through a printed circuit board
CN101939359B (en) 2007-10-22 2015-09-09 弗莱克斯伯陶器公司 Fire-resistant flexible ceramic resin blend and the composite product formed by it
US20090111925A1 (en) 2007-10-31 2009-04-30 Burnham Kikue S Thermal interface materials, methods of production and uses thereof
US8445102B2 (en) 2007-11-05 2013-05-21 Laird Technologies, Inc. Thermal interface material with thin transfer film or metallization
US9795059B2 (en) 2007-11-05 2017-10-17 Laird Technologies, Inc. Thermal interface materials with thin film or metallization
JP5137538B2 (en) 2007-11-28 2013-02-06 リンテック株式会社 Adhesive composition, adhesive sheet and method for producing semiconductor device
JP2009138036A (en) 2007-12-04 2009-06-25 Momentive Performance Materials Japan Kk Thermally-conductive silicone grease composition
US8076773B2 (en) 2007-12-26 2011-12-13 The Bergquist Company Thermal interface with non-tacky surface
US20110121435A1 (en) 2008-01-16 2011-05-26 Kazuyuki Mitsukura Photosensitive adhesive composition, filmy adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device, and process for producing semiconductor device
US20090184283A1 (en) 2008-01-18 2009-07-23 Deborah Duen Ling Chung Antioxidants for phase change ability and thermal stability enhancement
US7732829B2 (en) 2008-02-05 2010-06-08 Hymite A/S Optoelectronic device submount
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
JP4656340B2 (en) 2008-03-03 2011-03-23 信越化学工業株式会社 Thermally conductive silicone grease composition
KR20100136544A (en) * 2008-04-10 2010-12-28 월드 프로퍼티즈 인코퍼레이티드 Circuit materials with improved bond, method of manufacture thereof, and articles formed therefrom
WO2009131913A2 (en) 2008-04-21 2009-10-29 Honeywell International Inc. Thermal interconnect and interface materials, methods of production and uses thereof
US8632879B2 (en) 2008-04-25 2014-01-21 The University Of Kentucky Research Foundation Lightweight thermal management material for enhancement of through-thickness thermal conductivity
US10358535B2 (en) 2008-04-25 2019-07-23 The University Of Kentucky Research Foundation Thermal interface material
WO2009136508A1 (en) 2008-05-08 2009-11-12 富士高分子工業株式会社 Heat conductive resin composition
US8115303B2 (en) 2008-05-13 2012-02-14 International Business Machines Corporation Semiconductor package structures having liquid coolers integrated with first level chip package modules
JP5607298B2 (en) 2008-07-29 2014-10-15 株式会社カネカ Thermal conductive material
KR20110034038A (en) 2008-08-04 2011-04-04 히다치 가세고교 가부시끼가이샤 Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8394746B2 (en) 2008-08-22 2013-03-12 Exxonmobil Research And Engineering Company Low sulfur and low metal additive formulations for high performance industrial oils
EP2194165A1 (en) 2008-10-21 2010-06-09 Rohm and Haas Electronic Materials LLC Method for replenishing tin and its alloying metals in electrolyte solutions
US20100129648A1 (en) 2008-11-26 2010-05-27 Jun Xu Electronic packaging and heat sink bonding enhancements, methods of production and uses thereof
CN101445627A (en) 2008-12-11 2009-06-03 上海交通大学 High-voltage DC cable insulating material and a preparation method thereof
US8138239B2 (en) 2008-12-23 2012-03-20 Intel Corporation Polymer thermal interface materials
JP5390202B2 (en) 2009-01-21 2014-01-15 株式会社カネカ Heat dissipation structure
US7816785B2 (en) 2009-01-22 2010-10-19 International Business Machines Corporation Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package
JP5663495B2 (en) 2009-02-04 2015-02-04 ダウ コーニング コーポレーションDow Corning Corporation Method for forming non-random copolymer
CN102341474B (en) * 2009-03-02 2014-09-24 霍尼韦尔国际公司 Thermal interface material and method of making and using the same
US8440312B2 (en) 2009-03-12 2013-05-14 Dow Corning Corporation Thermal interface materials and methods for their preparation and use
JP5651676B2 (en) 2009-03-16 2015-01-14 ダウ コーニング コーポレーションDow Corning Corporation Thermally conductive grease, and method and device using the grease
DE102009001722B4 (en) 2009-03-20 2012-04-05 Infineon Technologies Ag Method for applying a heat transfer medium to a heat dissipation surface
KR101659537B1 (en) 2009-04-03 2016-09-23 보르벡크 머터리얼스 코포레이션 Polymer compositions containing graphene sheets and graphite
US20100256280A1 (en) 2009-04-07 2010-10-07 Laird Technologies, Inc. Methods of forming resin and filler composite systems
JP2010248277A (en) 2009-04-10 2010-11-04 Panasonic Corp Heat-conductive resin paste and optical disk device using the same
JP5562574B2 (en) 2009-04-14 2014-07-30 信越化学工業株式会社 Thermally conductive adhesive
ES2733913T3 (en) 2009-05-05 2019-12-03 Parker Hannifin Corp Thermoconducting foam product
JP5577553B2 (en) 2009-05-27 2014-08-27 協同油脂株式会社 Heat dissipation compound composition
US8362607B2 (en) 2009-06-03 2013-01-29 Honeywell International Inc. Integrated circuit package including a thermally and electrically conductive package lid
KR100953679B1 (en) 2009-06-15 2010-04-20 두성산업 주식회사 Material for radiating heat, and method for producing the said material
US8081468B2 (en) 2009-06-17 2011-12-20 Laird Technologies, Inc. Memory modules including compliant multilayered thermally-conductive interface assemblies
JP5466294B2 (en) 2009-06-19 2014-04-09 ダウ コーニング コーポレーション Use of ionomer silicone thermoplastic elastomers in electronic devices
US8535787B1 (en) 2009-06-29 2013-09-17 Juniper Networks, Inc. Heat sinks having a thermal interface for cooling electronic devices
CN101942197B (en) 2009-07-09 2012-06-27 昆山伟翰电子有限公司 Heat-conducting silicon rubber composite material and preparing method thereof
US20120174956A1 (en) 2009-08-06 2012-07-12 Laird Technologies, Inc. Thermoelectric Modules, Thermoelectric Assemblies, and Related Methods
US20130199724A1 (en) 2009-10-09 2013-08-08 Designer Molecules, Inc. Curatives for epoxy compositions
JP5463116B2 (en) 2009-10-14 2014-04-09 電気化学工業株式会社 Thermally conductive material
US9593209B2 (en) 2009-10-22 2017-03-14 Dow Corning Corporation Process for preparing clustered functional polyorganosiloxanes, and methods for their use
US8223498B2 (en) 2009-11-11 2012-07-17 Juniper Networks, Inc. Thermal interface members for removable electronic devices
TWI370532B (en) 2009-11-12 2012-08-11 Ind Tech Res Inst Chip package structure and method for fabricating the same
JP5318733B2 (en) 2009-11-26 2013-10-16 コスモ石油ルブリカンツ株式会社 Thermally conductive grease
GB2508320B (en) 2009-12-09 2014-07-23 Intel Corp Polymer thermal interface materials
TWI475103B (en) 2009-12-15 2015-03-01 Ind Tech Res Inst Heat spreader structure
US20110192564A1 (en) 2009-12-21 2011-08-11 Saint-Gobain Performance Plastics Corporation Thermally conductive foam material
CN101735619B (en) 2009-12-28 2011-11-09 华南理工大学 Halogen-free flame-retarded heat-conducting organic silicon electronic potting adhesive and preparation method thereof
KR101023241B1 (en) 2009-12-28 2011-03-21 제일모직주식회사 Adhensive composition for semiconductor device and adhensive film using the same
JP2011165792A (en) 2010-02-08 2011-08-25 Teijin Dupont Films Japan Ltd Biaxially oriented heat dissipating film
US9771508B2 (en) 2010-02-23 2017-09-26 Laird Technologies, Inc. Thermal interface materials including thermally reversible gels
US9260645B2 (en) 2010-02-23 2016-02-16 Laird Technologies, Inc. Thermal interface materials including thermally reversible gels
US7990711B1 (en) 2010-02-24 2011-08-02 International Business Machines Corporation Double-face heat removal of vertically integrated chip-stacks utilizing combined symmetric silicon carrier fluid cavity and micro-channel cold plate
CN102791819B (en) 2010-03-15 2015-04-01 日本化药株式会社 Heat-resistant adhesive
US8009429B1 (en) 2010-03-22 2011-08-30 Honeywell International Inc. Electrical component thermal management
WO2011137360A1 (en) 2010-04-30 2011-11-03 Indium Corporation Thermal interface materials with good reliability
US8308861B2 (en) 2010-05-13 2012-11-13 E I Du Pont De Nemours And Company Phase change material compositions
US8647752B2 (en) 2010-06-16 2014-02-11 Laird Technologies, Inc. Thermal interface material assemblies, and related methods
CN102134474B (en) 2010-12-29 2013-10-02 深圳市优宝惠新材料科技有限公司 Thermal grease composition
US8917510B2 (en) 2011-01-14 2014-12-23 International Business Machines Corporation Reversibly adhesive thermal interface material
US9598575B2 (en) 2011-01-26 2017-03-21 Dow Corning Corporation High temperature stable thermally conductive materials
US8277774B2 (en) 2011-01-27 2012-10-02 Honeywell International Method for the preparation of high purity stannous oxide
HUE032290T2 (en) 2011-03-30 2017-09-28 Infacare Pharmaceutical Corp Methods for synthesizing metal mesoporphyrins
KR101800437B1 (en) 2011-05-02 2017-11-22 삼성전자주식회사 Semiconductor Package
US20120285673A1 (en) 2011-05-11 2012-11-15 Georgia Tech Research Corporation Nanostructured composite polymer thermal/electrical interface material and method for making the same
JP2012241063A (en) 2011-05-17 2012-12-10 Nitto Denko Corp Adhesive sheet for producing semiconductor device
CN102250588B (en) * 2011-05-18 2013-09-25 杨福河 High-performance phase-change heat conduction material and preparation method thereof
US20120292005A1 (en) 2011-05-19 2012-11-22 Laird Technologies, Inc. Thermal interface materials and methods for processing the same
WO2013021717A1 (en) 2011-08-10 2013-02-14 株式会社Adeka Silicon-containing curable composition and cured product of same
JP5687167B2 (en) 2011-09-27 2015-03-18 コスモ石油ルブリカンツ株式会社 Heat-resistant thermal grease
CN103102689B (en) 2011-11-15 2015-04-01 佛山市金戈消防材料有限公司 Organic-silicon pouring sealant composition with high thermal conductivity and application thereof
US20130127069A1 (en) 2011-11-17 2013-05-23 International Business Machines Corporation Matrices for rapid alignment of graphitic structures for stacked chip cooling applications
WO2013074920A1 (en) 2011-11-17 2013-05-23 Reliabulb, Llc Low thermal impedance interface for an led bulb
CN103131138B (en) 2011-11-23 2016-05-11 合肥杰事杰新材料股份有限公司 A kind of thermoplastic polyester composition and preparation method thereof
CN103254647A (en) 2012-02-20 2013-08-21 深圳德邦界面材料有限公司 Heat-conductive gap interface material and preparation method thereof
CN102627943A (en) 2012-04-11 2012-08-08 北京化工大学常州先进材料研究院 Moisture/ultraviolet double-curing organic silicon adhesive
CN102634212B (en) 2012-04-23 2015-11-25 湖州明朔光电科技有限公司 A kind of heat conductive silicone grease composition
JP5783128B2 (en) 2012-04-24 2015-09-24 信越化学工業株式会社 Heat curing type heat conductive silicone grease composition
US8937384B2 (en) 2012-04-25 2015-01-20 Qualcomm Incorporated Thermal management of integrated circuits using phase change material and heat spreaders
TWI598385B (en) 2012-05-10 2017-09-11 國立清華大學 Insulated thermal interface material
JP2014003152A (en) 2012-06-18 2014-01-09 Dow Corning Toray Co Ltd Method for forming thermal interface material and heat dissipation structure
CN104428385B (en) 2012-07-04 2016-05-18 Dic株式会社 Sealant, the duplexer that uses this sealant and solar module
US8587945B1 (en) 2012-07-27 2013-11-19 Outlast Technologies Llc Systems structures and materials for electronic device cooling
EP2882821B1 (en) 2012-07-30 2020-06-03 Dow Silicones Corporation Thermally conductive condensation reaction curable polyorganosiloxane composition and methods for the preparation and use of the composition
US20150232664A1 (en) * 2012-09-07 2015-08-20 Sabic Innovative Plastics Ip B.V. Thermally conductive blended polymer compositions with improved flame retardancy
GB201220099D0 (en) 2012-09-19 2012-12-26 Dow Corning Production of blend of polyolefin and organopolysiloxane
JP2014105283A (en) 2012-11-28 2014-06-09 Shin Etsu Chem Co Ltd Thermally conductive silicone grease composition
FR3000090A1 (en) 2012-12-20 2014-06-27 Bluestar Silicones France METHOD AND COMPOSITIONS USEFUL FOR SEALING AND ASSEMBLING COMPONENTS OF A MOTOR-PROPELLER GROUP
JP5944306B2 (en) 2012-12-21 2016-07-05 コスモ石油ルブリカンツ株式会社 High thermal conductive grease
CN103087389B (en) 2013-01-31 2015-06-10 合肥工业大学 High-heat-conductivity high-toughness composite material and preparation method thereof
JP6408491B2 (en) 2013-02-11 2018-10-17 ダウ シリコーンズ コーポレーション INSITU Method for Forming Thermally Conductive Thermal Radical Curable Silicone Composition
JP5372270B1 (en) 2013-02-19 2013-12-18 ビッグテクノス株式会社 Thermal radiation film and thermal radiation adhesive tape
JP6263042B2 (en) * 2013-02-28 2018-01-17 コスモ石油ルブリカンツ株式会社 Thermally conductive grease with base oil diffusion prevention performance
CN103102552A (en) 2013-03-12 2013-05-15 泰山体育产业集团有限公司 Phase-changed heat insulation polyolefin foam material and preparation method thereof
WO2014160067A1 (en) 2013-03-14 2014-10-02 Dow Corning Corporation Thermally curable silicone compositions as temporary bonding adhesives
US9070660B2 (en) 2013-03-15 2015-06-30 Intel Corporation Polymer thermal interface material having enhanced thermal conductivity
JP2014208728A (en) * 2013-04-16 2014-11-06 富士高分子工業株式会社 Heat storable silicone material and method for producing the same
CN103214848B (en) 2013-04-28 2015-07-22 深圳市新亚新材料有限公司 Phase change heat-conducting thermal silicone grease composition for central processing unit (CPU) radiating and preparation method thereof
CN103333447A (en) 2013-06-26 2013-10-02 苏州天脉导热科技有限公司 Phase-change thermal interface material and preparation method thereof
US9464879B2 (en) 2013-06-28 2016-10-11 Buhler, Inc. Barrel measuring device
KR20160032009A (en) 2013-07-16 2016-03-23 히타치가세이가부시끼가이샤 Photosensitive resin composition, film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, and semiconductor device
CN103409116B (en) 2013-07-30 2015-07-22 深圳德邦界面材料有限公司 Insulating enhanced heat conduction interface material and preparation method thereof
CN104341772A (en) * 2013-07-30 2015-02-11 霍尼韦尔国际公司 Heat-conducting polyamide composition for application of LED (Light Emitting Diode) radiator
CN103436027B (en) 2013-09-09 2015-10-28 北京化工大学 A kind of heat-conduction electric insulation silicon rubber thermal interface material and preparation method thereof
US20150069290A1 (en) * 2013-09-10 2015-03-12 Sabic Innovative Plastics Ip B.V. Polycarbonate based ductile thermally conductive polymer compositions and uses
KR101917164B1 (en) 2013-10-30 2018-11-09 에스케이이노베이션 주식회사 Method of fabricating thermal conductive polymer
US20150125646A1 (en) 2013-11-05 2015-05-07 Espci Innov Self-Healing Thermally Conductive Polymer Materials
WO2015068551A1 (en) 2013-11-08 2015-05-14 リンテック株式会社 Protective film forming composition, protective film forming sheet, and chip provided with protective film
JP2015097134A (en) 2013-11-15 2015-05-21 日東電工株式会社 Suspension substrate with circuit
CN103756631B (en) 2013-11-28 2015-06-03 常熟市恒信粘胶有限公司 Double-component self-adhesive addition type flame retardant heat conducting room temperature curing organic silicon pouring sealant
EP3077578A4 (en) 2013-12-05 2017-07-26 Honeywell International Inc. Stannous methansulfonate solution with adjusted ph
CN104152103B (en) 2013-12-23 2016-08-17 郑州中原应用技术研究开发有限公司 A kind of add-on type bi-component heat conduction casting glue and preparation method thereof
CN103709757A (en) 2013-12-30 2014-04-09 无锡中石油润滑脂有限责任公司 Insulating and heat-conducting silicone grease and preparation method thereof
CN104449550B (en) 2013-12-31 2016-08-17 弗洛里光电材料(苏州)有限公司 Silicon composition and application thereof
CN103773322A (en) * 2014-02-08 2014-05-07 中国电子科技集团公司第三十三研究所 Phase change microcapsule heat conduction material and preparation method thereof
CN103865271B (en) 2014-03-20 2017-04-05 北京化工大学 A kind of preparation method of the modified organosilicon heat conductive electronic pouring sealant of nano-hybrid material
CN103849356A (en) * 2014-03-20 2014-06-11 中国电子科技集团公司第三十三研究所 Electrical insulating phase-change heat conducting material and preparation method thereof
JP6348434B2 (en) 2014-03-28 2018-06-27 信越化学工業株式会社 Silicone pressure-sensitive adhesive composition, production method thereof, and pressure-sensitive adhesive film
JP2015212318A (en) 2014-05-01 2015-11-26 信越化学工業株式会社 Thermal conductive silicone composition
US20150334871A1 (en) 2014-05-19 2015-11-19 Laird Technologies, Inc. Thermal interface materials with thin film sealants
CN104140678B (en) 2014-06-29 2017-04-12 惠州市永卓科技有限公司 Self-adhesive heat-conducting silicone grease and preparation method thereof
CN104098914B (en) 2014-07-02 2017-09-29 深圳市安品有机硅材料有限公司 Organosilicon heat-conducting interface material
EP3190636B1 (en) 2014-09-01 2020-07-29 Kaneka Corporation Automotive led lamp heat sink
WO2016044975A1 (en) 2014-09-22 2016-03-31 Dow Global Technologies Llc Thermal grease based on hyperbranched olefinic fluid
US10355188B2 (en) 2014-10-23 2019-07-16 Kaneka Corporation LED lamp heat sink
WO2016063931A1 (en) 2014-10-24 2016-04-28 ナミックス株式会社 Conductive composition and electronic component using same
CN104479623B (en) * 2014-12-03 2016-05-18 湖南皓志科技股份有限公司 A kind of high heat conduction normal temperature cure organic silicon potting adhesive
KR20170091669A (en) 2014-12-05 2017-08-09 허니웰 인터내셔널 인코포레이티드 High performance thermal interface materials with low thermal impedance
CN104513487B (en) 2014-12-10 2017-05-10 东莞兆舜有机硅科技股份有限公司 Bi-component heat conduction silica gel and application thereof
CN104497574A (en) 2014-12-10 2015-04-08 深圳市博恩实业有限公司 Multifunctional organic silicon thermal interface material
CN107207858B (en) 2014-12-25 2021-02-05 积水保力马科技株式会社 Silicon composition
US10431858B2 (en) 2015-02-04 2019-10-01 Global Web Horizons, Llc Systems, structures and materials for electrochemical device thermal management
CN104804705A (en) 2015-05-06 2015-07-29 成都拓利化工实业有限公司 Low release quantity additive halogen-free flame-retardant heat-conduction organic silicon pouring sealant and preparation method thereof
CN104861661A (en) 2015-05-13 2015-08-26 浙江中天氟硅材料有限公司 Low density heat conduction pouring sealant and preparation method thereof
JP7149074B2 (en) 2015-06-03 2022-10-06 株式会社カネカ METAL-RESIN COMPOSITE AND MANUFACTURING METHOD THEREOF
JP6323398B2 (en) 2015-06-10 2018-05-16 信越化学工業株式会社 Thermally conductive silicone putty composition
US10692797B2 (en) * 2015-06-30 2020-06-23 Laird Technologies, Inc. Thermal interface materials with low secant modulus of elasticity and high thermal conductivity
CN106467668B (en) 2015-08-19 2021-07-30 广东生益科技股份有限公司 Organic silicon resin aluminum-based copper-clad plate and preparation method thereof
JP7089876B2 (en) 2015-09-09 2022-06-23 株式会社カネカ Thermally conductive resin composition
CN105111750A (en) 2015-09-09 2015-12-02 蓝星(成都)新材料有限公司 Organosilicon sealant for LED (light-emitting diode) packaging
JP6497291B2 (en) 2015-10-14 2019-04-10 信越化学工業株式会社 Insulating heat dissipation sheet
CN105349113A (en) 2015-10-14 2016-02-24 文雪烽 Heat-conductive interface material
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
CN105419339A (en) 2015-12-01 2016-03-23 江苏晶河电子科技有限公司 High-performance silicon-based thermal-conducting gel and preparation method thereof
CN105566920A (en) 2015-12-24 2016-05-11 平湖阿莱德实业有限公司 Low-oil-permeability super-soft thermally-conductive silica gel composition and thermally-conductive silica gel gasket and preparation method thereof
CN105670555A (en) 2016-01-22 2016-06-15 何挺 High heat conductivity organosilicon potting compound
CN105925243A (en) 2016-05-23 2016-09-07 东莞珂洛赫慕电子材料科技有限公司 Room-temperature cured-type high thermal conductive flexible silica gel
CN105838322A (en) 2016-05-26 2016-08-10 张学健 Novel organosilicone pouring sealant
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
US20180030328A1 (en) 2016-07-26 2018-02-01 Honeywell International Inc. Gel-type thermal interface material
CN106221236B (en) 2016-07-26 2019-09-10 深圳市金无曼工业新材料有限公司 Can room temperature or heating gelation preparation two-component heat-conducting silicone grease and preparation method thereof
EP3526303A4 (en) 2016-10-12 2020-09-09 Honeywell International Inc. Thermal interface materials including coloring agent
JP7129181B2 (en) 2017-03-17 2022-09-01 旭化成株式会社 Parts for head-mounted displays
CN107057370A (en) * 2017-05-18 2017-08-18 平湖阿莱德实业有限公司 A kind of high heat conduction calking boundary material and preparation method thereof
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10344194B2 (en) 2017-09-27 2019-07-09 Momentive Performance Materials Inc. Thermal interface composition comprising ionically modified siloxane
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002327116A (en) * 2001-05-01 2002-11-15 Shin Etsu Chem Co Ltd Thermoconductive silicone composition and semiconductor device
KR20040081453A (en) * 2002-01-14 2004-09-21 허니웰 인터내셔널 인코포레이티드 Thermal Interface Materials
JP2009102577A (en) * 2007-10-25 2009-05-14 Polymatech Co Ltd Thermal conductive composition
KR20110053441A (en) * 2008-09-01 2011-05-23 다우 코닝 도레이 캄파니 리미티드 Thermally conductive silicone composition and semiconductor device
WO2015120773A1 (en) * 2014-02-13 2015-08-20 Honeywell International Inc. Compressible thermal interface materials
WO2016004565A1 (en) * 2014-07-07 2016-01-14 Honeywell International Inc. Thermal interface material with ion scavenger

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