KR20170025892A - Composition forforming electrode, electrode manufactured using the same and solar cell - Google Patents
Composition forforming electrode, electrode manufactured using the same and solar cell Download PDFInfo
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- KR20170025892A KR20170025892A KR1020150122990A KR20150122990A KR20170025892A KR 20170025892 A KR20170025892 A KR 20170025892A KR 1020150122990 A KR1020150122990 A KR 1020150122990A KR 20150122990 A KR20150122990 A KR 20150122990A KR 20170025892 A KR20170025892 A KR 20170025892A
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- South Korea
- Prior art keywords
- electrode
- composition
- bismuth
- weight
- glass frit
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 54
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 28
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- 229910052684 Cerium Inorganic materials 0.000 description 1
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- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
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- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 229940051250 hexylene glycol Drugs 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
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- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
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- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000010022 rotary screen printing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Geology (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
A composition for forming electrodes, an electrode made therefrom, and a solar cell.
Solar cells generate electrical energy by using photoelectric effect of pn junction that converts photon of sunlight into electricity. The solar cell is formed with a front electrode and a rear electrode on a semiconductor wafer or substrate upper and lower surfaces, respectively, where a pn junction is formed. The photovoltaic effect of the pn junction is induced in the solar cell by the sunlight incident on the semiconductor wafer, and the electrons generated from the pn junction provide a current flowing to the outside through the electrode.
The electrode of such a solar cell can be formed in a predetermined pattern on the surface of the wafer by applying, patterning and firing the composition for electrode formation.
In order to improve the conversion efficiency of the solar cell, it is necessary to improve the contact property with the substrate to minimize the contact resistance (Rc) and the series resistance (Rs), or to adjust the line width of the screen mask a fine line is formed to increase the short-circuit current I sc .
In the electrode patterns formed on the substrate, the cells constituting the solar cell are connected to each other by ribbons to be manufactured as a final module. If the adhesion strength between the electrode and the ribbon is poor, the series resistance may be large and conversion efficiency may be deteriorated.
Accordingly, there is a demand for a composition for forming an electrode that can improve the adhesion between the electrode and the ribbon.
One embodiment is to provide a composition for electrode formation which can increase the efficiency and reliability of a solar cell by minimizing the series resistance (Rs) by increasing the adhesive force.
Another embodiment provides an electrode made of the electrode forming composition.
Another embodiment provides a solar cell comprising the electrode.
One embodiment includes a conductive powder bismuth (Bi) -tellurium (Te) based glass frit MgO powder and an organic vehicle, wherein the MgO powder is contained in an amount of 0.1 to less than 0.5% by weight based on 100% by weight of the composition for electrode formation A composition for electrode formation is provided.
The content of the MgO powder may be 0.1 to 0.49 wt% based on 100 wt% of the composition for forming an electrode.
The molar ratio of tellurium and bismuth in the bismuth (Bi) -tellurium (Te) glass frit may be in the range of 1: 1 to 1:40.
The bismuth (Bi) -theluri (Te) glass frit may further include lithium (Li).
The bismuth (Bi) - tellurium (Te) glass frit may contain 0.01 to 0.5 mole of lithium per mole of the total of tellurium and bismuth.
Wherein the composition for electrode formation comprises 60 to 95% by weight of the conductive powder; 0.5 to 20% by weight of said bismuth (Bi) -thelurium (Te) glass frit; And an MgO powder content of 0.1 to 0.5% by weight and an amount of the organic vehicle residue.
The composition for electrode formation may further include at least one additive selected from the group consisting of a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent.
Another embodiment provides an electrode made of the electrode forming composition.
Another embodiment provides a solar cell comprising the electrode.
The composition for electrode formation can increase the adhesion between the substrate and the electrode pattern, thereby improving the efficiency of the solar cell.
1 is a schematic view briefly showing a structure of a solar cell according to an embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.
One embodiment includes a conductive powder bismuth (Bi) -tellurium (Te) glass frit MgO powder and an organic vehicle, wherein the MgO powder is contained in an amount of 0.1 to less than 0.5% by weight based on 100% by weight of the composition for electrode formation A composition for electrode formation is provided.
Hereinafter, the present invention will be described in detail.
The electrode forming composition may use a metal powder as the conductive powder. The metal powder may be at least one selected from the group consisting of Ag, Au, Pd, Pt, Ru, Rh, Os, Ir, (Ti), niobium (Nb), tantalum (Ta), aluminum (Al), copper (Cu), nickel (Ni), molybdenum (Mo), vanadium (V), zinc (Zn) (Y), Co, Zr, Fe, W, Sn, Cr, Mn, and the like.
The conductive powder may be a powder having a particle size of nano size or micro size, for example, a conductive powder having a size of several tens to several hundreds of nanometers, a conductive powder of several to several tens of micrometers, Conductive powder may be mixed and used.
The conductive powder may have a spherical shape, a plate shape, or an amorphous shape. The average particle diameter (D50) of the conductive powder is preferably 0.1 占 퐉 to 10 占 퐉, and more preferably 0.5 占 퐉 to 5 占 퐉. The average particle diameter was measured using a 1064LD model manufactured by CILAS after dispersing the conductive powder in isopropyl alcohol (IPA) at room temperature (20 to 25 ° C) for 3 minutes using ultrasonic waves. Within this range, the contact resistance and line resistance can be lowered.
The conductive powder may be contained in an amount of 60 to 95% by weight based on the total weight of the electrode forming composition. Preferably 70 to 90% by weight. In this range, it is possible to prevent the conversion efficiency from being lowered by increasing the resistance, and to prevent the paste from becoming difficult due to the relative reduction in the amount of the organic vehicle.
The bismuth (Bi) -thelrium (Te) glass frit is formed by etching the antireflection film during the firing process of the electrode forming composition, melting the conductive powder particles to lower the resistance, To improve the adhesion between the conductive powder and the wafer and to soften the sintered powder to lower the firing temperature.
Increasing the area of the solar cell to increase the efficiency of the solar cell may increase the contact resistance of the solar cell, so that the damage of the pn junction should be minimized and the resistance of the series should be minimized. Further, since the variation range of the firing temperature increases with the increase of wafers having various sheet resistances, it is preferable to use the glass frit which can sufficiently secure thermal stability even at a wide firing temperature.
Further, the cells constituting the solar cell are connected to each other by the ribbon. If the adhesion strength between the ribbon and the solar cell electrode to be bonded is not secured sufficiently, There is a risk of degradation.
Therefore, in one embodiment of the present invention, a Bi-tellurium (Te) glass frit is used to simultaneously secure physical characteristics such as electrical characteristics and adhesion strength of a solar cell. The bismuth (Bi) - tellurium (Te) glass frit is lead-free glass which does not contain lead and is advantageous in that it is environmentally friendly.
The molar ratio of tellurium to bismuth in the bismuth (Bi) -tellurium (Te) based glass frit may be in the range of 1: 1 to 1:40. The efficiency of the solar cell and the adhesion strength of the electrode pattern in the above range can be ensured at the same time .
The bismuth (Bi) -theluri (Te) glass frit may further include lithium (Li).
The bismuth (Bi) -tellurium (Te) glass frit may contain 0.01 to 0.5 mol, specifically 0.03 to 0.3 mol, of lithium relative to 1 mol of the total amount of tellurium and bismuth.
The bismuth (Bi) -thelrium (Te) glass frit may be at least one selected from the group consisting of phosphorus (P), germanium (Ge), gallium (Ga), cerium ), Tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium ) Selected from nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese And may further include more than two kinds of metal elements. These metal elements may be contained in an amount of 0.01 to 0.5 mol per 1 mol of the total amount of tellurium and bismuth in the bismuth (Bi) -tellurium (Te) glass frit.
The bismuth (Bi) tellurium (Te) glass frit may be derived from an oxide of the metal element described above using conventional methods. For example, the mixture prepared by mixing the bismuth oxide, tellurium oxide and optionally the lithium oxide and / or the oxide of the added metal element in a specific composition is melted and then quenched And then grinding again. The mixing process may be performed using a ball mill or a planetary mill. The melting process may be performed at a temperature of 700 ° C to 1300 ° C, and the crystallization process may be performed at room temperature (20 ° C to 25 ° C). The pulverization process may be performed by a disk mill, a planetary mill or the like, but is not limited thereto.
The bismuth (Bi) -tellurium (Te) glass frit may have an average particle diameter (D50) of 0.1 탆 to 10 탆, and may be contained in an amount of 0.5 to 20% by weight based on the total weight of the electrode forming composition. The bonding strength of the electrode pattern can be improved within a range that does not impair the electrical characteristics of the electrode within the above range.
The shape of the bismuth (Bi) tellurium (Te) glass frit may be spherical or non-shape.
The organic vehicle imparts suitable viscosity and rheological properties to the paste composition through mechanical mixing with inorganic components of the electrode-forming composition. The organic vehicle comprises an organic binder and a solvent.
The organic binder may be an acrylate-based or a cellulose-based resin, and ethylcellulose is generally used. However, it is preferable to use a mixture of ethylhydroxyethylcellulose, nitrocellulose, a mixture of ethylcellulose and phenol resin, an alkyd resin, a phenol resin, an acrylic ester resin, a xylene resin, a polybutene resin, a polyester resin, Based resin, a wood rosin, or a polymethacrylate of an alcohol may be used.
The weight average molecular weight (Mw) of the organic binder may be 30,000 to 200,000 g / mol, and preferably 40,000 to 150,000 g / mol. When the weight average molecular weight (Mw) is within the above range, an excellent effect can be obtained in view of printability.
The solvent includes, for example, hexane, toluene, texanol, methyl cellosolve, ethyl cellosolve, cyclohexanone, butyl cellosolve, aliphatic alcohol, (Diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol terpineol, methyl ethyl ketone, benzyl alcohol, gamma-butyrolactone, ethyl lactate, and the like, or a mixture of two or more thereof.
The organic vehicle may be used in an amount of 1 to 30% by weight, preferably 5 to 15% by weight based on the total weight of the composition for forming an electrode. It is possible to improve the adhesion strength between the electrode pattern and the substrate in the above-mentioned range and to ensure excellent continuous printing property.
In addition to the above-described components, the composition for electrode formation may further include conventional additives as needed in order to improve flow characteristics, process characteristics, and stability. The additive may be used alone or in admixture of two or more, such as a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent. These are added in an amount of 0.1 to 5% by weight based on the total weight of the composition for electrode formation, but they can be changed as needed. The content of the additive may be selected in consideration of the printing property, dispersibility, and storage stability of the electrode-forming composition.
According to another embodiment, there is provided an electrode formed from the electrode forming composition.
The electrode can be formed in a predetermined pattern on the surface of the wafer by applying, patterning and firing the electrode forming composition. The electrode forming composition may be applied by various methods such as screen printing, gravure offset method, rotary screen printing method, or lift-off method, but is not limited thereto. The coated electrode forming composition preferably has a certain pattern and preferably has a thickness of 10 to 40 탆.
The baking process of the patterned composition for electrode formation will be described in detail in a manufacturing process of the solar cell.
According to another embodiment, there is provided a solar cell including the electrode. A solar cell according to an embodiment will be described with reference to FIG.
1 is a schematic view briefly showing a structure of a solar cell according to one embodiment.
1, a composition for electrode formation is printed and fired on a
In addition, a preparation step for the front electrode can be performed by printing a composition for electrode formation on the entire surface of the
Hereinafter, the present invention will be described in more detail by way of examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.
Preparation of composition for electrode formation
Examples 1 to 5 and Comparative Examples 1 to 3
(Dow chemical company, STD4) (Mw = 50,000 g / mol) and Texanol (Eastman) as a solvent were sufficiently melted at 60 ° C. to obtain spherical silver powder having an average particle diameter of 2.0 μm Bi-Te lead-free glass frit powder (ABT-1, manufactured by Asahi Glass Co., Ltd.), dispersant (BYK-chemie, BYK-102) and stiffening agent (Dowa Hightech Co. LTD AG-5-11F) Elementis Co., Thixatrol ST) were added, mixed and dispersed by a 3 roll milling machine to prepare a composition for electrode formation.
Comparative Examples 4 to 6
Except that the composition shown in the following Table 1 was used instead of the Bi-Te-based lead-free glass frit powder using a Pb-Te glass frit powder having an average particle size of 1.0 占 퐉 (CT-55, Particle Lodge) A composition for electrode formation was prepared in the same manner.
Frit
bookbinder
Evaluation of efficiency of solar cell
After texturing the entire surface of a wafer (p-type wafer doped with boron), an n + layer is formed of POCl 3 , and a multi crystalline silicon nitride (SiNx: H) The wafers were screen-printed on the entire surface of the substrate in the same manner as in Examples 1 to 5 and Comparative Examples 1 to 6, and dried at 300 to 400 ° C using an infrared ray drying furnace. Thereafter, aluminum paste was printed on the rear surface of the wafer and dried in the same manner. The cells formed in the above process were fired at 400 to 900 DEG C for 40 seconds using a belt-type firing furnace to prepare test cells.
The efficiency of the fabricated test cell was measured using a solar cell efficiency measuring device (Passan, CT-801). The results are shown in Table 2 below.
Adhesion evaluation
A flux was applied to the prepared electrode and then bonded to the ribbon at 300 to 400 ° C using an iron soldering machine (HAKKO). Then, the adhesive strength was measured at a stretching angle of 50 mm / min using a tensile tester (Tiniusolsen) under the condition of 180 deg. The measured adhesive strength (N / mm) is shown in Table 2 below.
Referring to Table 2, the solar cell manufactured using the composition for electrode formation according to Examples 1 to 5 exhibited both good efficiency and adhesion strength. On the other hand, the solar cell manufactured using the composition for electrode formation according to Comparative Example 1 in which MgO was not used was not excellent in bonding strength, and the electrode according to Comparative Example 2 and Comparative Example 3 in which the MgO content was 0.5 weight% It can be seen that the efficiency of the solar cell manufactured using the composition is low.
Further, when the lead-containing glass frit powder was used as in Comparative Example 4, it was found that the efficiency and the bonding strength were both lower than those of Example 2 using the same amount of MgO and using the Bi-Te lead- . It can be seen that the efficiency is poor in Comparative Example 5 and Comparative Example 6 in which the lead-containing glass frit powder is used and the MgO content is 0.5 wt% or more.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
Bi-tellurium (Te) -based glass frit
MgO powder and
An organic vehicle,
Wherein the MgO powder is contained in an amount of 0.1 to less than 0.5% by weight based on 100% by weight of the electrode forming composition.
Wherein the content of the MgO powder is 0.1 to 0.49% by weight based on 100% by weight of the composition for electrode formation.
Wherein the molar ratio of tellurium and bismuth in the bismuth (Bi) -tellurium (Te) glass frit is in the range of 1: 1 to 1:40.
Wherein the bismuth (Bi) -thelurium (Te) glass frit further comprises lithium (Li).
Wherein the bismuth (Bi) tellurium (Te) glass frit contains lithium in an amount of 0.01 to 0.5 mol based on 1 mol of the total of tellurium and bismuth.
Wherein the composition for electrode formation comprises 60 to 95% by weight of the conductive powder; 0.5 to 20% by weight of said bismuth (Bi) -thelurium (Te) glass frit; And 0.1 to less than 0.5% by weight of MgO powder and 1 to 30% by weight of the organic vehicle.
Wherein the composition for electrode formation comprises at least one additive selected from the group consisting of a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent .
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