KR20170020022A - Substrate treating method for selectively etching a substrate surfaces - Google Patents

Substrate treating method for selectively etching a substrate surfaces Download PDF

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Publication number
KR20170020022A
KR20170020022A KR1020150114653A KR20150114653A KR20170020022A KR 20170020022 A KR20170020022 A KR 20170020022A KR 1020150114653 A KR1020150114653 A KR 1020150114653A KR 20150114653 A KR20150114653 A KR 20150114653A KR 20170020022 A KR20170020022 A KR 20170020022A
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KR
South Korea
Prior art keywords
substrate
etching
center
spin chuck
selected region
Prior art date
Application number
KR1020150114653A
Other languages
Korean (ko)
Inventor
이봉문
Original Assignee
세메스 주식회사
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Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020150114653A priority Critical patent/KR20170020022A/en
Publication of KR20170020022A publication Critical patent/KR20170020022A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)

Abstract

The present invention relates to a substrate processing method for selectively etching a substrate surface. The substrate processing method includes a step of setting a selection region to be etched on a substrate; a step of loading the substrate on a spin chuck such that the selection region is located at the center of the spin chuck; and a step of moving a nozzle to the center of the spin chuck to provide an etchant to the selection region of the substrate rotated, and etching the selection region.

Description

[0001] SUBSTRATE TREATING METHOD FOR SELECTIVELY ETCHING A SUBSTRATE SURFACES [

The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing method for selectively etching a substrate surface.

In general, an etching process used for manufacturing a semiconductor device refers to a manufacturing process of processing a film (for example, a metal film, an oxide film, a polycrystalline silicon film, or a photoresist film) formed on a semiconductor substrate into a desired pattern .

Such etching processes include chemical etching, plasma etching, ion beam, and reactive ion etching. In recent years, a chemical etching method has been used to etch a semiconductor substrate A spin etching method in which a chemical solution is injected while spinning is widely used.

In the spin etching process, a central supply method for spraying the etching solution to the center of the semiconductor substrate and a scan supply method for spraying the chemical solution while moving to the edge in the central region of the semiconductor substrate are used.

1 is a view showing a semiconductor substrate W provided in an etching process.

Referring to FIG. 1, the thickness of the thin film deposited on the substrate W differs depending on the region of the substrate W. In the process of forming a thin film on the substrate W, a region where the thickness of the thin film is thicker than other regions such as a selective area (SA) is generated.

In the case where the substrate is processed by a spin etching process, since the thin film on the surface of the substrate is removed while the chemical liquid injected onto the substrate flows from the center to the edge of the substrate by centrifugal force, it is impossible to adjust the etching rate for each part of the semiconductor substrate.

Therefore, even after the etchant is uniformly supplied to the entire surface of the substrate and the etching is completed, the selective region remains thicker than the other regions. This causes process failures in subsequent processes.

Embodiments of the present invention are intended to provide a substrate processing method capable of selective etching according to defective scattering in all steps.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: setting a selection region to be etched on a substrate; Loading the substrate onto a spin chuck such that the selected region is located at the center of the spin chuck; And etching the selected region by providing an etchant to a selected region of the substrate rotated by moving the nozzle to the center of the spin chuck.

The setting step may include measuring a thickness of the thin film on the substrate; And setting the selection region by analyzing the measured thin film thickness.

Also, the loading step may load the substrate on the spin chuck such that the selected region is located at the rotation center of the spin chuck.

The setting step may further include setting a center of the selection area.

The loading step may load the substrate on the spin chuck such that the center of the selection area coincides with the rotation center of the spin chuck.

In the step of etching the selected region, the etching range may be controlled by adjusting the rotation speed of the spin chuck and the amount of the etching solution injected from the nozzle.

In addition, the spin chuck can fix the substrate by vacuum.

According to the present invention, the selective region can be locally etched by rotating the spin chuck at a low speed so that the selected region coincides with the rotation center of the spin chuck so as to be eccentric.

According to the present invention, it is possible to control the etching amount of each substrate portion.

1 is a view showing a semiconductor substrate provided in an etching process.
2 is a plan view schematically showing a substrate processing system;
3 is a cross-sectional view showing a substrate processing apparatus.
4 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
5A is a view showing the center of the selected region of the substrate.
5B is a view showing a state in which the center of the selected region of the substrate is placed to coincide with the center of rotation of the spin head.
5C is a view showing spraying the etchant into the selected region.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout the specification and claims. The description will be omitted.

2 is a plan view schematically showing the substrate processing system of the present invention.

Referring to FIG. 2, the substrate processing system 1000 of the present invention may include an index unit 10 and a process processing unit 20. The index section 10 and the process processing section 20 are arranged in a line. The direction in which the index portion 10 and the processing portion 20 are arranged is referred to as a first direction 1 and the direction perpendicular to the first direction 1 is referred to as a second direction 2, And a direction perpendicular to the plane including the first direction 1 and the second direction 2 is defined as a third direction 3. [

The index portion 10 is disposed in front of the first direction 1 of the substrate processing system 1000. The index portion 10 includes a load port 12 and a transfer frame 14.

The carrier 18 in which the substrate W is accommodated is seated in the load port 12. A plurality of load ports 12 are provided and they are arranged in a line along the second direction 2. The number of the load ports 12 may increase or decrease depending on the process efficiency and the footprint condition of the substrate processing apparatus 60, and the like. As the carrier 18, a front opening unified pod (FOUP) may be used. The carrier 18 is formed with a plurality of slots for accommodating the substrates horizontally arranged with respect to the paper surface.

The transfer frame 14 is disposed in the first direction adjacent to the load port 12. [ The transfer frame 14 is disposed between the load port 12 and the buffer section 22 of the processing section 20. The transfer frame 14 includes an index rail 17 and an index robot 16. And the index robot 16 is seated on the index rail 17. The index robot 16 transfers the substrate W between the buffer section 22 and the carrier 18. The index robot 16 moves linearly along the index rail 17 in the second direction or rotates about the third direction 3 as an axis.

Process processing section 20 is disposed behind substrate processing system 1000 along a first direction 1 adjacent to index section 10. The processing section 20 includes a buffer section 22, a moving passage 24, a main transfer robot 26, and a substrate processing apparatus 60.

The buffer unit 22 is disposed in front of the processing unit 20 along the first direction 1. The buffer unit 22 is a place where the substrate W is temporarily stored and waited before the substrate W is transferred between the substrate processing apparatus 60 and the carrier 18. [ The buffer portion 22 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided so as to be spaced apart from each other in the third direction 3.

The transfer passage 24 is disposed in correspondence with the buffer portion 22. The moving passages (24) are arranged in the longitudinal direction along the first direction (1). The transfer passage 24 provides a path through which the main transfer robot 26 moves. On both sides of the transfer passage 24, the substrate processing apparatuses 60 are disposed facing each other along the first direction 1. [ The main transfer robot 26 moves along the first direction 1 in the transfer passage 24 and moves up and down the upper and lower layers of the substrate processing apparatus 60 and the upper and lower layers of the buffer unit 22. [ Respectively.

The main transfer robot 26 is installed in the transfer passage 24 and transfers the substrate W between the substrate processing apparatus 60 and the buffer section 22 or between the substrate processing apparatuses 60. The main transfer robot 26 moves linearly in the second direction 2 along the movement path 24 or rotates about the third direction 3. [

 A plurality of substrate processing apparatuses 60 are provided and can be disposed on both sides of the moving path 24 along the second direction 2. [ Some of the substrate processing apparatuses 60 may be disposed along the longitudinal direction of the moving path 24. [ In addition, some of the substrate processing apparatuses 60 may be stacked on each other. That is, the substrate processing apparatuses 60 may be arranged in an array of A X B on one side of the transfer passage 24. Where A is the number of substrate processing apparatuses 60 provided in a row along the first direction 1 and B is the number of substrate processing apparatuses 60 provided in a row along the second direction 2. [ When four or six substrate processing apparatuses 60 are provided on one side of the transfer passage 24, the substrate processing apparatuses 60 may be arranged in an array of 2 X 2 or 3 X 2. The number of the substrate processing apparatuses 60 may increase or decrease. Unlike the above, the substrate processing apparatus 60 may be provided only on one side of the moving path 24. Also, unlike the above, the substrate processing apparatus 60 may be provided as a single layer on one side and on both sides of the moving passage 24. [

The substrate processing apparatus 60 can perform an etching process on the substrate W. [ The substrate processing apparatus 60 may have a different structure depending on the etching process to be performed. Alternatively, each substrate processing apparatus 60 may have the same structure. Alternatively, the substrate processing apparatuses 60 are divided into a plurality of groups, and the substrate processing apparatuses 60 belonging to the same group are identical to each other, and the structures of the substrate processing apparatuses 60 belonging to different groups are provided differently from each other .

2 is a cross-sectional view showing a substrate processing apparatus.

In the following embodiments, an example of an apparatus for performing an etching process for etching a film (for example, a metal film, an oxide film, a polycrystalline silicon film, or a photoresist film) formed on a substrate W using processing fluids is described as an example I will explain it. However, the technical spirit of the present invention is not limited thereto, and can be applied to various kinds of apparatuses that perform a process while supplying a processing fluid to a substrate, such as a cleaning process.

In the present embodiment, the substrate processed by the substrate processing apparatus 60 is exemplified as a semiconductor substrate. However, the present invention is not limited to this and can be applied to various types of substrates such as a glass substrate.

2, the substrate processing apparatus 60 includes a processing chamber 700, a processing vessel 100, a substrate supporting member 200, a jetting member 300, and a processing fluid supply unit 800. [

The process chamber 700 provides an enclosed space. Although not shown, a fan filter unit is installed on the top of the process chamber to generate a vertical air flow inside the process chamber 700. The vertical airflow of the air provided by the fan filter unit provides a uniform airflow over the substrate and the contaminated gas such as fumes generated during the processing of the substrate surface by the processing fluid flows into the processing vessel 100 to be discharged to the exhaust member 400 to be removed, thereby maintaining the cleanliness of the interior of the processing vessel.

A camera 790 is provided at the top of the process chamber 700 and a camera 790 is provided to check whether a selected region of the substrate is placed at the center of rotation of the spin head 210 of the substrate support member 200.

The process chamber 700 is partitioned into a process area 716 and a maintenance area 718 by a horizontal partition 714. The maintenance area 718 is provided with a processing fluid connected to the injection nozzle 340 of the injection member 300 in addition to the recovery lines 141 and 145 and the sub-exhaust line 410 connected to the processing vessel 100, Such as the supply unit 800, etc., is preferably located, such a maintenance area 718 is preferably isolated from the process area where the substrate processing is to be performed.

The processing vessel 100 has a cylindrical shape with an open top, and provides a processing space for processing the substrate w. The open upper surface of the processing vessel 100 is provided as a take-out and carry-in passage of the substrate w. The substrate support member 200 is located in the process space. The processing vessel 100 is provided with a second exhaust duct 190 connected to the second exhaust member 400 below the process space. The second exhaust duct 190 is provided with a drain line 192 at its bottom surface.

The processing vessel 100 includes recovery bins 121, 122, and 123 and a first elevating member 130.

The recovery tubes 121, 122, and 123 are arranged in multiple stages for introducing and sucking the chemical liquid and the gas scattered on the substrate to be rotated. Each of the recovery cylinders 121, 122 and 123 can recover different processing fluids among the processing fluids used in the process.

The third fixed recovery cylinder 123 is provided in an annular ring shape surrounding the substrate support member 311 and the second fixed recovery cylinder 122 is provided in the shape of an annular ring surrounding the third fixed recovery cylinder 123 And the first fixed recovery cylinder 121 is provided in the shape of an annular ring surrounding the second fixed collection cylinder 122. An inner space 123a of the third fixed recovery cylinder 123 is provided as an inlet through which the chemical liquid and the gas are introduced into the third fixed recovery cylinder 123. [ The space 122a between the third fixed recovery cylinder 123 and the second fixed recovery cylinder 122 is provided as an inlet through which the chemical solution and the gas are introduced into the second fixed collection cylinder 122. [ The space between the second fixed recovery cylinder 122 and the first fixed recovery cylinder 121 is provided as an inlet through which the chemical liquid and the gas are introduced into the first fixed recovery cylinder 121.

In this embodiment, the processing vessel is shown as having three fixed recovery cylinders, but the present invention is not limited thereto. The processing vessel may include two fixed recovery cylinders or three or more fixed recovery cylinders.

The exhaust member 400 is for providing the exhaust pressure in the processing vessel 100 during the substrate processing process. The second exhaust member 400 includes a sub-exhaust line 410 connected to the second exhaust duct 190, and a damper 420. The sub-exhaust line 410 is supplied with the exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line embedded in the bottom space of the semiconductor production line.

The substrate support member 200 supports the substrate W and rotates the substrate during the process. The substrate support member 200 includes a spin head 210, a support shaft 220, and a rotation drive unit 230. The spin head may be a vacuum chuck for holding the substrate in a vacuum. The spin head 210 has an upper surface that is generally circular when viewed from the top. The spin head 210 may have a diameter approximately twice the diameter of the substrate. A support shaft 220 rotatable by a rotation drive unit 230 is fixedly coupled to a bottom surface of the spin head 210.

The injection member 300 receives the processing fluid from the processing fluid supply unit and ejects the processing fluid onto the processing surface of the substrate placed on the spin head 210 of the substrate supporting member 200. The injection member 300 includes a support shaft 320, a driver 310, a nozzle support 330, and a spray nozzle 340. The support shaft 320 is provided in the third direction 3 in its longitudinal direction and the lower end of the support shaft 320 is engaged with the driver 310. The driver 310 rotates and linearly moves the support shaft 320. The nozzle support 330 is coupled to the support shaft 320 to move the injection nozzle 340 to an upper portion of the substrate or to cause the injection nozzle 340 to move while spraying the processing fluid over the substrate.

The injection nozzle 340 is installed at the bottom end of the nozzle support base 330. The injection nozzle 340 is moved to the process position and the standby position by the driver 310. The process position is a position where the injection nozzle 340 is disposed at the vertical upper portion of the processing container 100 and the standby position is the position where the injection nozzle 340 is deviated from the vertical upper portion of the processing container 100. The injection nozzle 340 injects the processing fluid supplied from the processing fluid supply unit 800. Further, the injection nozzle 340 can directly supply the processing fluid other than the processing fluid supplied from the processing fluid supply unit 800 to the nozzle and inject it.

FIG. 5A is a view showing a center of a selected region of a substrate, FIG. 5B is a cross-sectional view illustrating a state in which the center of the selected region of the substrate is aligned with the center of rotation of the spin head FIG. 5C is a view showing the spraying of the etchant into the selected region. FIG.

4 to 5C, a substrate processing method includes a step S100 of setting a selection area of a substrate W, a step S200 of loading a substrate on a spin head, And etching (S300).

In the step S100 of setting the selected region of the substrate, the thickness of the deposited film on the substrate is measured using the thin film measuring apparatus 910, and the controller 920 analyzes the thin film thickness measured in the thin film measuring apparatus 910 The thickness of the substrate is calculated, and a selection region SA to be locally deflected is set based on the calculated thickness. Further, the control unit 920 sets the selection area SA and then sets the center C1 of the selection area. The thin film measurement of the substrate may be performed in the substrate processing apparatus 60 or may be performed in a separate chamber before being transferred to the substrate processing apparatus 60.

 The step of loading the substrate onto the spin head places the substrate on the spin head such that the center of the selected area of the substrate coincides with the center of rotation of the spin head. Whether the center of rotation of the spin head coincides with the center of the selected area can be checked by a camera installed at the top of the process chamber.

The step of etching the selected region causes the spin head to rotate at a low speed, and the etchant is injected into the selected region after the injection nozzle is moved to the center of the selected region. The control unit adjusts the rotation speed of the spin head and the injection amount of the etching liquid so as to prevent the etching liquid from being pushed out of the selection area. That is, the size of the etching region can be controlled according to the rotation speed of the spin head and the amount of the etching solution supplied. As described above, the etching of the selective region reduces the thin film thickness of the selected region and the thin film thickness difference of the adjacent region.

As described above, local selective etching is possible by supplying a small amount of etchant to the center of rotation while rotating the substrate at a low speed so as to be eccentric to the spin head by positioning a desired selection region at the rotation center of the spin head.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

800: process fluid supply unit 810: flow rate control module
820: Case 830: Flow measurement member
840; Multi-purpose valve member 850: electropneumatic regulator

Claims (7)

A substrate processing method for etching a substrate, comprising:
Setting a selection region to be etched on the substrate;
Loading the substrate onto a spin chuck such that the selected region is located at the center of the spin chuck; And
And moving the nozzle toward the center of the spin chuck to provide an etchant to a selected region of the substrate to rotate to etch the selected region. The method according to claim 1,
The setting step
Measuring a thickness of the thin film on the substrate; And
And analyzing the measured thin film thickness to set the selected region. 3. The method of claim 2,
The loading step
And the substrate is loaded on the spin chuck such that the selected region is located at the center of rotation of the spin chuck. 3. The method of claim 2,
The setting step
And setting a center of the selection region. 5. The method of claim 4,
The loading step
And the substrate is loaded on the spin chuck such that the center of the selected region coincides with the rotation center of the spin chuck. The method according to claim 1,
In the step of etching the selected region
Wherein the etching range is controlled by adjusting the rotation speed of the spin chuck and the injection amount of the etching solution in the nozzle. The method according to claim 1,
Wherein the spin chuck holds the substrate in a vacuum.
KR1020150114653A 2015-08-13 2015-08-13 Substrate treating method for selectively etching a substrate surfaces KR20170020022A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110620069A (en) * 2019-10-21 2019-12-27 深圳市思坦科技有限公司 System and method for wet processing of wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110620069A (en) * 2019-10-21 2019-12-27 深圳市思坦科技有限公司 System and method for wet processing of wafers

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