KR20160113505A - Preparation method of high density thermoelectric materials - Google Patents
Preparation method of high density thermoelectric materials Download PDFInfo
- Publication number
- KR20160113505A KR20160113505A KR1020150082488A KR20150082488A KR20160113505A KR 20160113505 A KR20160113505 A KR 20160113505A KR 1020150082488 A KR1020150082488 A KR 1020150082488A KR 20150082488 A KR20150082488 A KR 20150082488A KR 20160113505 A KR20160113505 A KR 20160113505A
- Authority
- KR
- South Korea
- Prior art keywords
- thermoelectric material
- thermoelectric
- manufacturing
- powder
- container
- Prior art date
Links
Images
Classifications
-
- H01L35/14—
-
- H01L35/02—
-
- H01L35/16—
-
- H01L35/18—
-
- H01L35/28—
-
- H01L35/34—
Abstract
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thermoelectric material, and more particularly, to a method of hot isostatic pressing (HIP) of a thermoelectric material powder at a temperature of 300 to 400 DEG C and a pressure of 300 to 800 bar And a method of manufacturing the thermoelectric material. The manufacturing method of the present invention has the effect of increasing the density of the thermoelectric material as compared with the prior art. Further, since the physical properties of the thermoelectric material are uniformly expressed, it is possible to produce a material which is economical in mass production. Furthermore, by separately coating the diffusion preventing layer in the metal material container which can be used in the manufacturing method of the present invention, a high-density pure thermoelectric material can be manufactured. The thermoelectric material thus produced is cooled by a Peltier element for cooling, And the like.
Description
The present invention relates to a method for producing a thermoelectric material capable of converting waste heat into electric energy or converting electricity into thermal energy, and more particularly to a method for producing a thermoelectric material capable of converting homogenous physical properties 0002] The present invention relates to a method of manufacturing a thermoelectric material having a thermoelectric material.
Thermoelectric materials are energy conversion materials that generate electrical energy when a temperature difference is applied between opposite ends of a material, and generate a temperature difference when electrical energy is applied. Conversely, the thermoelectric material is a thermoelectric material, Seebeck effect, Peltier effect, and Thomson effect. Then, it was used as a special independent power source device such as space and military using thermoelectric power mainly in USA and Europe from the late 1930s And power plants using automobiles, incinerators, and waste heat are being developed. In addition, they are widely used for cooling chillers, coolers and heat exchangers for computer-related small chillers, cold / hot water chillers, and the like, which require thermoelectric cooling, a compact air conditioner system and precise temperature control.
The power generation capacity and the cooling capacity of the thermoelectric material are expressed by the thermoelectric performance index ZT = (σα 2 / κ) T (α: Seebeck coefficient, σ: electrical conductivity, κ: thermal conductivity, . The high energy conversion efficiency of the thermoelectric material means that the performance index ZT is high. To increase the figure of merit, the electrical conductivity and the Seebeck coefficient should be improved, while the thermal conductivity should be reduced. That is, in the case of a thermoelectric material, independent characteristics control of high electrical conductivity and low thermal conductivity is required.
On the other hand, Bi 2 Te 3 is known as a material exhibiting the highest thermoelectric performance index at room temperature. This Bi 2 Te 3 -based material has a laminated structure in the order of -Te-Bi-Te-Bi-Te- as a layered compound having a surface-type crystal structure, and has a thermoelectric anisotropy While the Te-Te bonding surface is composed of van der Waals bonds having weak atomic bonds, which makes it difficult to cut and plastic work.
In order to improve the performance, a Bi-Te powder is sintered to produce a thermoelectric material. For example, a pulverization method using a ball mill or the like, a mechanical Research has been reported on the alloying, pulverized and intermixed sintering elements (PIES), rapid solidification, and pressure sintering.
However, such a sintering method is known to exhibit excellent thermoelectric properties and mechanical strength. However, there are problems such as oxidation of powder, incorporation of impurities and volatilization of Te due to a high sintering temperature depending on complex processes, There is a disadvantage in that it is relatively expensive
As described above, since a Bi-Te based material has a disadvantage that it is difficult to increase the density of a general atmosphere sintering furnace due to its large anisotropic crystal structure, recently, spark plasma sintering or hot pressing pressing method) have been used.
However, in the uniaxial pressure process, there is a disadvantage that the properties of the sintered body produced are anisotropic in the material properties in the plane perpendicular to the direction in which the pressure is applied and in the horizontal plane.
Therefore, the inventors of the present invention have found that when hot isostatic pressing (HIP) is performed on a thermoelectric material powder while conducting research for increasing the density of a thermoelectric material, , And the production process of the present invention was completed.
An object of the present invention is to provide a method of manufacturing a high-density thermoelectric material.
The present invention
And hot isostatic pressing (HIP) of the thermoelectric material powder at a temperature of 300 to 400 DEG C and a pressure of 300 to 800 bar.
Further, according to the present invention,
Wherein the thermoelectric material has a theoretical density value of 99% or more, which is produced through a manufacturing method.
Further,
A method for improving the density of a thermoelectric material including thermoelectric materials having a theoretical density of 95% or more by hot isostatic pressing (HIP) is provided.
The manufacturing method of the present invention has the effect of increasing the density of the thermoelectric material as compared with the prior art. Further, since the physical properties of the thermoelectric material are uniformly expressed, it is possible to produce a material which is economical in mass production. Furthermore, by separately coating the diffusion preventing layer in the metal material container which can be used in the manufacturing method of the present invention, a high-density pure thermoelectric material can be manufactured. The thermoelectric material thus produced is cooled by a Peltier element for cooling, And the like.
1 is a photograph showing a metal container with a thermoelectric material sealed in an embodiment of the present invention,
FIG. 2 is a photograph of a powder used as a material in the embodiment of the present invention, observed with a scanning electron microscope,
FIG. 3 is a graph showing the X-ray diffraction analysis of powder used as a material in the embodiment of the present invention,
4 is a graph showing a relative density of thermoelectric materials according to a sintering method,
5 is a conceptual view of a container for a HIP process,
6 is a photograph showing a change in composition distribution with and without a diffusion preventing layer,
7 is a graph showing changes in the thermoelectric conversion performance index depending on the presence or absence of the diffusion preventing layer,
8 is a graph showing changes in hardness of the surface and the inside depending on the presence or absence of the diffusion preventing layer.
Hereinafter, a method of manufacturing the thermoelectric material of the present invention will be described in detail.
According to the present invention,
There is provided a method of manufacturing a thermoelectric material including hot isostatic pressing (HIP) of a thermoelectric material powder.
The method for manufacturing a thermoelectric material according to the present invention is particularly for increasing the density of a thermoelectric material, and includes a step of subjecting the thermoelectric material powder to high temperature isostatic pressing as described above.
That is, in manufacturing a thermoelectric material, the thermoelectric material powders have been sintered through a sintering process in the prior art. For example, a spark plasma sintering process or a hot pressing process, Sintering methods have been used.
However, in the case of the uniaxial pressure process such as the spark plasma sintering or the hot press, there is a disadvantage in that the properties of the sintered body produced exhibit anisotropy in physical properties of the thermoelectric material on the plane perpendicular to the direction in which the pressure is applied and on the horizontal plane. And the physical properties of the thermoelectric material produced are not uniformly displayed in the sample.
Accordingly, the present invention provides a method of manufacturing a thermoelectric material including a step of subjecting a thermoelectric material powder to high-temperature isostatic pressing to solve the disadvantage that anisotropy is exhibited in the physical properties of the thermoelectric material as described above.
In the high temperature isostatic pressing, a target material, that is, a thermoelectric material powder is placed in a container in which a process is performed, a high-pressure gas is applied to the powder in the container in three axes, and the thermoelectric material powder is three- . Accordingly, since the closed pores existing in the thermoelectric material powder can be easily removed, a high-density thermoelectric material can be produced directly from the thermoelectric material powder unlike the ingot-based manufacturing process.
At this time, in the manufacturing method of the present invention, the thermoelectric material powder may have a structure represented by the following formula (1).
≪ Formula 1 >
A x B y
(Wherein A is at least one element of In, Bi and Sb,
B is at least one element of Te and Se,
x has a range of 0 < x? 4,
and y is a number having a range of 0 < y <
In the manufacturing method of the present invention, the thermoelectric material powder may be an N-type or P-type Bi-Te type. For example, a p-type Bi-Sb-Te, an n-type Bi- Powder, but the thermoelectric material powder is not limited thereto.
In the manufacturing method of the present invention, the high temperature isostatic pressing may be performed by charging a thermoelectric material powder into a metal container containing a metal such as copper (Cu), aluminum (Al), and iron (Fe) have.
High-temperature isostatic pressing is a step of three-dimensionally compressing a target substance in a container by applying a high-pressure gas on three axes and then compressing the same in a uniform direction. Therefore, in the manufacturing method of the present invention in which the thermoelectric material powder is subjected to high temperature isostatic pressing, the thermoelectric material powder can be placed in the container and then subjected to hot isostatic pressing. Particularly, containers containing copper, aluminum and the like can be used.
Since the metal such as copper and aluminum is a relatively loose metal, it can be suitably applied to high temperature isostatic pressing of the thermoelectric material powder. In addition, stainless steel can be used as a metal container in the present invention if its thickness is adjusted, for example, to a thickness of 1 mm or less, although its strength is high, so that it is slightly deformed.
In the high temperature isostatic pressing, as shown in FIG. 5, a diffusion preventing layer may be formed in the metal container.
That is, the metal container may contain a metal such as copper or aluminum to perform a high-temperature isostatic pressing of the thermoelectric material powder. However, copper, aluminum and the like may easily react with a thermoelectric material powder, for example, a Bi-Te thermoelectric powder. In addition, when the high-temperature isostatic pressing is performed, if the metal of the metal container is diffused into the thermoelectric material powder at a high temperature, the composition of the thermoelectric material may not be constant. In this case, Can not be used.
In the present invention, as described above, the diffusion barrier layer may be included in the metal container, thereby preventing diffusion of the metal in the metal container even if high temperature isostatic pressing is performed.
At this time, the diffusion preventing layer may include gold (Au), platinum (Pt), carbon material and the like, preferably gold or carbon material having low reactivity,
As the carbon material, graphite or the like may be used, but it is not limited thereto as long as it can prevent the metal of the metal container from diffusing.
Meanwhile, the method of the present invention may include a buffer layer and a diffusion preventing layer in the metal container when performing the high temperature isostatic pressing.
That is, as mentioned above, when the metal of the metal container of the metal container is diffused into the thermoelectric material powder during the high temperature isostatic pressing of the thermoelectric material powder, the composition of the thermoelectric material may not be constant. In this case, The thermoelectric material in the region close to the container can not be used.
Further, in the present invention, in order to prevent diffusion of the metal of the metal container, the diffusion barrier layer may be included in the metal container,
When the diffusion barrier layer is formed of a noble metal such as gold (Au), the diffusion barrier layer may be formed in a nanoscale, in which case the metal of the metal container may be diffused through the thin diffusion barrier layer. As a means for preventing such a problem, in the manufacturing method of the present invention, a buffer layer and a diffusion preventing layer may be included in the metal container.
At this time, the buffer layer may include metals such as Ni, Fe, and Co, but it is not limited thereto, and a suitable metal that can prevent diffusion between the diffusion barrier layer and the metal container Can be selected.
In addition, the thickness of the diffusion barrier layer and the buffer layer are not particularly limited as long as they can prevent diffusion of metal, but they may preferably be formed to have a thickness of 10 to 100 nm, respectively.
On the other hand, in the case of the iron-based container, since the reactivity with the Bi-Te thermoelectric material is relatively low, it is preferable to form the diffusion preventing layer with a thickness of about 1 mm from the viewpoint of sample protection and container protection.
The diffusion preventing layer and the buffer layer may be formed through a process such as sputtering, chemical vapor deposition, or electroless plating, but the method of forming the diffusion preventing layer and the buffer layer is not limited thereto.
In the production method of the present invention, the high temperature isostatic pressing may be performed at a temperature of 300 to 400 ° C and a pressure of 300 to 800 bar.
If the high temperature isostatic pressing is carried out under the above-mentioned pressure range, the container itself may not be deformed due to low stress, so that the thermoelectric material may not be densified. The deformation and densification of the container are sufficiently performed, but the amount of the gas used for increasing the pressure is greatly increased, which may cause a problem of lowering the economical efficiency.
Meanwhile, the manufacturing method of the present invention may further include uniaxially compressing the thermoelectric powder before the high-temperature isostatic pressing is performed
This is to further improve the density (theoretical density) of the thermoelectric material to be manufactured, and the uniaxial compression can press-mold the thermoelectric material powder at 60 to 90% of the theoretical density.
If the uniaxial compression is less than 60% of the theoretical density and the thermoelectric material powder is compacted, residual pores may be present even after the subsequent high-temperature isostatic pressing is performed because the compact density is low. In addition, when the thermoelectric material powders are press-formed in excess of 90% of the theoretical density, the sintering property may be improved, but the metal container of the soft material may be broken.
In addition,
The thermoelectric material has a theoretical density value of 99% or more, which is produced through the above-described production method.
The object of the present invention is to increase the density of the thermoelectric material, and in order to increase the density of the thermoelectric material, the thermoelectric material of high density can be manufactured through the high temperature isostatic pressing. , It is possible to exhibit a theoretical density value of 99% or higher, which is higher than that of the thermoelectric material produced through hot pressing.
Hereinafter, the present invention will be described in more detail with reference to examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
≪ Example 1 > Production of thermoelectric material 1
Step 1: mechanical bismuth, tellurium, antimony material Bi 0 .5 Sb 1 .5 in were weighed according to the composition of Te 3, 450rpm via the charging them to the vial and flash four planetary mill (planetary milling) for 8 hours for the alloy to Bi-Sb-Te based thermoelectric material powders of type p (Bi 0 .5 Sb 1 .5 Te 3) were prepared.
Step 2: The Bi-Sb-Te thermoelectric material powder prepared in the above step 1 was charged into a copper container, and the container was sealed through a copper lid as shown in FIG. 1, and a vacuum of 10 -6 torr The inside air was degassed until it reached. Thereafter, the temperature of the vessel was maintained at 250 DEG C for 1 hour.
At this time, the thickness of the copper container was 1 mm, and gold (Au) having a thickness of about 10 nm was sputter coated inside the copper container.
Step 3: The copper container loaded with the thermoelectric material powders up to the
Example 2: Production of
Prior to carrying out the step 3 of Example 1, the same procedure as in Example 1 was carried out except that the step of uniaxially compressing the copper container charged with the thermoelectric material powder under a pressure of 100 MPa was carried out, Material.
≪ Example 3 > Production of thermoelectric material 3
A thermoelectric material was prepared in the same manner as in Example 1, except that a nickel coating layer having a thickness of about 100 nm and a copper coating having a gold (Au) coating layer having a thickness of 10 nm were used.
≪ Comparative Example 1 > Production of thermoelectric material by sintering method
The Bi-Sb-Te-based thermoelectric material powder prepared in Step 1 of Example 1 was press-molded at 50 MPa and sintered at 350 ° C for 1 hour to prepare a thermoelectric material.
≪ Comparative Example 2 > Production of thermoelectric material by hot pressing
The Bi-Sb-Te-based thermoelectric material powder prepared in the step 1 of Example 1 was charged into a graphite mold and sintered for 1 hour under a pressure of 50 MPa at a temperature of 350 ° C to prepare a thermoelectric material.
≪ Comparative Example 3 &
A thermoelectric material was prepared in the same manner as in Example 1 except that nitrogen gas was injected at a pressure of 140 MPa at a temperature of 480 ° C. and high-temperature isostatic pressing was performed for 60 minutes in the step 3 of Example 1 .
≪ Comparative Example 4 &
A thermoelectric material was prepared in the same manner as in Example 1 except that a copper container without a diffusion preventing layer was used.
<Experimental Example 1> Scanning electron microscopic analysis
The Bi-Sb-Te based thermoelectric material powders prepared in the step 1 of Example 1 were observed with a scanning electron microscope. The results are shown in FIG.
As shown in the photograph of FIG. 2, it can be seen that the prepared thermoelectric powder is a mixture of powders having a size of several mu m to several tens of mu m.
Experimental Example 2 X-ray diffraction analysis
X-ray diffraction analysis of the Bi-Sb-Te-based thermoelectric material powder prepared in the step 1 of Example 1 was performed. The results are shown in FIG.
As shown in the graph of Figure 3, the embodiment of Bi-Sb-Te based thermoelectric material powder prepared in step 1 of 1 it can be seen that the composition is manufactured for the purpose of Bi 0 .5 Sb 1 .5 Te 3 who.
≪ Experimental Example 3 > Theoretical density analysis
The relative density of the thermoelectric materials prepared in Example 1, Comparative Example 1 and Comparative Example 2 was measured by the method using the principle of Archimedes using the difference between the weight of the sample in water and the weight of the sample after drying, The results are shown in Fig.
As shown in the graph of FIG. 4, it can be seen that the thermoelectric material prepared in Example 1 of the present invention had a theoretical density value of about 95% or more.
On the other hand, it can be seen that the thermoelectric material of Comparative Example 1 produced through simple atmosphere sintering has a theoretical density value of about 85%, and the thermoelectric material of Comparative Example 2 produced through one-sided compression, i.e. hot pressing, , But showed a lower density than the first embodiment.
Thus, it can be seen that a high-density thermoelectric material can be produced through the manufacturing method of the present invention.
EXPERIMENTAL EXAMPLE 4 Analysis of Diffusion of Metal Container
In Example 1 and Comparative Example 4, Energy Dispersive X-ray Spectroscopy (EDS) attached to a scanning electron microscope was used to analyze metal diffusion according to presence or absence of a diffusion barrier layer.
EDS is suitable for analyzing the element composition of a thermoelectric material by quantitatively analyzing the presence and the amount of a specific element by distinguishing the intensity of an electron beam which is scanned and smashed by a sample, and the result of the analysis is shown in FIG.
As shown in Fig. 6, in the case of using the copper container in which the diffusion preventing layer is not formed in Comparative Example 4, copper is diffused into the thermoelectric material.
On the other hand, when the gold (Au) diffusion preventing layer is formed in Example 1, copper is not diffused into the thermoelectric material.
It can be seen from this that, in the case of using the metal container having the diffusion preventing layer formed in the manufacturing method of the present invention, it is possible to prevent the diffusion of the metal to produce a high quality thermoelectric material.
<Experimental Example 5> Analysis of the change in the thermoelectric conversion performance index according to the diffusion of the metal container
The electrical conductivity (σ), the Seebeck coefficient (S) and the thermal conductivity (κ) of the thermoelectric material were measured at the absolute temperature T) at 300 K, and the thermoelectric conversion performance index (ZT) of each thermoelectric material was calculated using the equation of Z = (σ · S · 300 K) / κ, and the result is shown in FIG.
As shown in Fig. 7, it was found that the thermoelectric conversion efficiency index of the thermoelectric material produced without the diffusion preventing layer in Comparative Example 4 significantly decreased at the surface, that is, at the portion contacting the metal container.
On the other hand, in the case of using the copper container to which the diffusion preventing layer was applied in Example 1, the thermoelectric conversion performance indexes on the surface and the center portion of the manufactured thermoelectric material were not different.
As a result, it can be seen that when the metal container having the diffusion barrier layer is used in the manufacturing method of the present invention, it is possible to manufacture a thermoelectric material having a homogeneous thermoelectric conversion performance index by preventing diffusion of metal.
<Experimental Example 6> Mechanical properties of thermoelectric materials according to diffusion of metal containers
In order to analyze the change in mechanical properties according to presence or absence of the diffusion preventing layer in Examples 1 and 4, a pyramid-shaped indenter having a diamond quadrangular pyramid shape was used to measure a diagonal line of a pyramidal concave portion The hardness was obtained. In this experiment, the size of the indentor press-fitted with a load of 100 g was measured, and then the Vickers hardness of each thermoelectric material was analyzed by the method of indicating the relative hardness of the sample. The results are shown in FIG.
As shown in Fig. 8, it can be seen that the thermoelectric material of Comparative Example 4 has a large difference in Vickers hardness value depending on the distance from the surface.
That is, the thermoelectric material of Comparative Example 4 shows that the characteristics of the thermoelectric material are not homogeneous due to the diffusion of the metal (copper).
On the other hand, in the thermoelectric material of Example 1, it can be seen that the Vickers hardness value is uniform in accordance with the distance from the surface. In other words, it can be seen that the thermoelectric material of Example 1 can exhibit homogeneous mechanical properties without diffusion of metal (copper).
As a result, it can be seen that when the metal container having the diffusion barrier layer is used in the manufacturing method of the present invention, diffusion of the metal is prevented, and a thermoelectric material having homogeneous mechanical characteristics can be manufactured.
Claims (11)
≪ Formula 1 >
A x B y
(Wherein A is at least one element of In, Bi and Sb,
B is at least one element of Te and Se,
x has a range of 0 < x? 4,
and y is a number having a range of 0 < y < = 4).
Wherein the thermoelectric material powder is charged into a metal container containing copper (Cu), aluminum (Al), or iron (Fe) based stainless steel.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20150039138 | 2015-03-20 | ||
| KR1020150039138 | 2015-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160113505A true KR20160113505A (en) | 2016-09-29 |
| KR101685659B1 KR101685659B1 (en) | 2016-12-13 |
Family
ID=57073431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150082488A KR101685659B1 (en) | 2015-03-20 | 2015-06-11 | Preparation method of high density thermoelectric materials |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101685659B1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100053359A (en) | 2008-11-12 | 2010-05-20 | 세종대학교산학협력단 | METHOD FOR MANUFACTURING OF P-TYPE Bi-Sb-Te BASED THERMOELECTRIC MATERIALS |
-
2015
- 2015-06-11 KR KR1020150082488A patent/KR101685659B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100053359A (en) | 2008-11-12 | 2010-05-20 | 세종대학교산학협력단 | METHOD FOR MANUFACTURING OF P-TYPE Bi-Sb-Te BASED THERMOELECTRIC MATERIALS |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101685659B1 (en) | 2016-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Koch et al. | Nanostructured materials by mechanical alloying: new results on property enhancement | |
| Rogl et al. | Half-Heusler alloys: Enhancement of ZT after severe plastic deformation (ultra-low thermal conductivity) | |
| CN100391021C (en) | Ag-Pb-Sb-Te thermoelectric materials and preparation process thereof | |
| US10662507B2 (en) | Method for producing a thermoelectric material | |
| KR101051010B1 (en) | Method of manufacturing p-type Bi-Sb-Te thermoelectric material | |
| US20190245129A1 (en) | Polycrystalline magnesium silicide and use thereof | |
| JP4854215B2 (en) | Thermoelectric material and manufacturing method thereof | |
| Li et al. | Enhanced interfacial reliability and mechanical strength of CoSb3-based thermoelectric joints with rationally designed diffusion barrier materials of Ti-based alloys | |
| Rogl et al. | High pressure torsion, a large‐scale manufacturing tool for high ZT skutterudite thermoelectrics | |
| KR102242915B1 (en) | Method for manufacturing a thermoelectric material having a uniform thermal conductive properties | |
| Truong | Thermoelectric properties of higher manganese silicides | |
| KR101685659B1 (en) | Preparation method of high density thermoelectric materials | |
| JP5877275B2 (en) | Method for producing thermoelectric conversion material | |
| US20170110645A1 (en) | Thermoelectric material with an antifluorite structure type matrix and method of manufacturing the material | |
| Rogl et al. | Thermoelectric Sb-based skutterudites for medium temperatures | |
| Zhou et al. | Design and optimization of gradient interface of p-type Ba 0.3 In 0.3 FeCo 3 Sb 12/Bi 0.48 Sb 1.52 Te 3 thermoelectric materials | |
| KR101528589B1 (en) | Method of manufacturing thermoelectric material and thermoelectric material prepared by the method and thermoelectric generator | |
| Chaturvedi | Synthesis and investigation of thermo-electric properties of Skutterudites CoSb3/Graphene particles nanocomposite | |
| KR102243128B1 (en) | Method for synthesizing single phase bulk AlSb | |
| JP5820550B2 (en) | (Zr, Hf) 3Ni3Sb4 n-type thermoelectric conversion material | |
| Song et al. | A Novel Pulse‐Current‐Assisted Sintering Method for Fabrication of Metallic Cellular Structures | |
| Acar et al. | The physical properties of aluminium-7xxx series alloys produced by powder metallurgy method | |
| WO2023145337A1 (en) | Thermoelectric conversion material, thermoelectric conversion material composition, thermoelectric conversion element, thermoelectric conversion module, thermoelectric conversion system, method for producing thermoelectric conversion material composition, and method for producing thermoelectric conversion material | |
| WO2023145339A1 (en) | Thermoelectric conversion material, thermoelectric conversion material composition, thermoelectric conversion element, thermoelectric conversion module, thermoelectric conversion system, method for producing thermoelectric conversion material composition, and method for producing thermoelectric conversion material | |
| JP6826925B2 (en) | Thermoelectric conversion materials, thermoelectric conversion elements, thermoelectric conversion modules, and mobiles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |