KR20150090943A

KR20150090943A - Apparatus and method for treating substrate

Info

Publication number: KR20150090943A
Application number: KR1020140011206A
Authority: KR
Inventors: 김태훈
Original assignee: 세메스 주식회사
Priority date: 2014-01-29
Filing date: 2014-01-29
Publication date: 2015-08-07

Abstract

An embodiment of the present invention provides an apparatus and a method for heat-treating a substrate. The substrate processing apparatus includes a chamber formed with an opening through which a substrate is introduced into and taken out from the one surface, a chamber provided in the processing space, a stage supported in the processing space, a substrate supported on the stage, A door assembly having a door for opening and closing the opening, and a blocking member for blocking external air flow into the processing space, wherein the blocking member includes a gas nozzle provided on the one surface, A gas supply line for supplying a blocking gas, and a heater provided on the gas supply line for heating a blocking gas provided through the gas supply line. The blocking gas may block the inlet through which the substrate is introduced to prevent the external air flow into the chamber.

Description

[0001] Apparatus and method for treating substrate [0002]

The present invention relates to an apparatus and a method for heat-treating a substrate.

Recently, a liquid crystal display (LCD) device and a plasma display panel (PDP) device are used for manufacturing a video display device, and a substrate of a flat panel display (FPD) is used.

As a process for manufacturing a flat panel display device, many processes such as a substrate fabrication process, a cell fabrication process, and a module fabrication process must be performed. Particularly, in the substrate manufacturing process, a photolithography process is performed to form various patterns on the substrate. The photolithography process sequentially performs a coating process of applying a photosensitive liquid such as a photoresist on a substrate, an exposure process of forming a specific pattern on the applied photosensitive film, and a developing process of developing the area corresponding to the exposed photosensitive film. Before and after the double coating step and the developing step are performed, a baking step for heat-treating the substrate is performed.

The bake process is carried out in an enclosed bake chamber outside. However, in the process of bringing the substrate into the bake chamber, an external airflow flows into the bake chamber to lower the internal temperature. The substrate also has a temperature lower than the internal temperature of the bake chamber, which reduces its internal temperature upon entry into the bake chamber.

As a result, the bake chamber must take some time to convert the internal temperature to the bake atmosphere. In addition, external particles enter the bake chamber and contaminate the interior.

Korean Published Patent No. 2009-0046719

The present invention intends to provide an apparatus and a method that can quickly perform the bake process.

The present invention also provides an apparatus and method for maintaining the internal temperature of the bake chamber at a constant level.

The present invention also provides an apparatus and a method for preventing particles from entering the bake chamber.

An embodiment of the present invention provides an apparatus and a method for heat-treating a substrate. The substrate processing apparatus includes a chamber formed with an opening through which a substrate is introduced into and taken out from the one surface, a chamber provided in the processing space, a stage supported in the processing space, a substrate supported on the stage, A door assembly having a door for opening and closing the opening, and a blocking member for blocking external air flow into the processing space, wherein the blocking member includes a gas nozzle provided on the one surface, A gas supply line for supplying a blocking gas, and a heater provided on the gas supply line for heating a blocking gas provided through the gas supply line.

The gas nozzle may be provided to discharge the blocking gas downward from the top of the opening. The longitudinal direction of the gas nozzle may be provided so as to be in a direction parallel to the longitudinal direction of the opening. The blocking member may further include a nozzle driver that rotates the gas nozzle about a longitudinal axis of the gas nozzle. The blocking member may further include a valve for opening and closing the gas supply line, and the controller may control the door assembly and the valve, and the controller may discharge the blocking gas when the opening is opened.

The substrate processing method may include an opening step of opening an opening formed in one surface of the chamber, a blocking step of blocking a flow of external air into the opening by discharging the blocking gas to the opening by the gas nozzle, A transfer step of transferring the substrate into the chamber, and a heating step of heat-treating the substrate placed in the chamber, wherein the shielding gas is provided at a temperature higher than normal temperature.

The gas nozzle may be provided to discharge the blocking gas downward from the top of the opening. The blocking gas may be changed in the direction of moving away from the chamber while the substrate is brought into the chamber through the opening. The blocking gas may be provided as an inert gas.

Also, a method of carrying out a process of heating a substrate includes: bringing a substrate into the chamber through an opening of the chamber, wherein an external airflow is introduced into the chamber while the substrate is being carried, And the heated gas is supplied to the opening.

The process may be provided in a bake process. The blocking gas may be discharged downward from the top of the opening so as to be parallel to one surface of the chamber in which the opening is formed. The blocking gas may be changed in the direction of moving away from the chamber while the substrate is brought into the chamber through the opening.

According to the embodiment of the present invention, the blocking gas can block the inlet through which the substrate is introduced and prevent the external airflow from flowing into the chamber.

Further, according to the embodiment of the present invention, since the blocking gas is heated to a temperature higher than the normal temperature, even if a part of the external air flow is introduced, the external air flow can be heated to maintain the internal temperature of the chamber.

According to the embodiment of the present invention, since the blocking gas is heated to a temperature higher than the normal temperature, the temperature of the substrate is brought into contact with the substrate to be brought in, and the temperature of the substrate can be prevented from being lowered due to the temperature of the substrate have.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a perspective view showing the coating unit of Fig. 1. Fig.
3 is a cross-sectional view showing the drying unit of Fig.
4 is a cross-sectional view showing the bake unit of Fig.
5 is a front view showing the bake unit of Fig.
6 to 8 are cross-sectional views showing a process of bringing the substrate into the bake unit.

The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

In addition, an embodiment of the present invention will be described as an example of a device for baking a substrate in a photolithography process. However, the present embodiment is not limited to this, and can be applied variously as long as it is a process of heat-treating a substrate.

In the embodiment of the present invention, a glass (S) for manufacturing a flat panel display panel is described as an example. However, the present embodiment is not limited to this and is also applicable to a circular wafer W.

Hereinafter, the present embodiment will be described in detail with reference to FIGS. 1 to 8. FIG.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention. 1, the substrate processing apparatus includes an index 100, a cleaning unit 110, a plurality of baking units 120, a coating unit 200, a drying unit 400, a buffer unit 130, an interface 140 An exposure unit 180, an edge exposure unit 150, a developing unit 160, and an inspection unit 170. [ Each processing unit is arranged in an inline type and includes an index 100, a cleaning unit 110, a coating unit 200, a drying unit 300, a buffer unit 130, an interface 140, an edge exposure unit 150, The developing unit 160, and the inspection unit 170 are sequentially arranged. The plurality of bake units 120 are arranged before and after the application unit 200 and before and after the development unit 160, respectively. An exposure unit 180 is disposed on one side of the interface 140. Between these processing units, a carrier robot is installed, and the carrier robot carries the substrate S between adjacent processing units.

In this embodiment, only the coating unit 200, the drying unit 300, and the bake unit 300 will be described, and the detailed description of the processing units will be omitted.

The application unit 200 applies a coating film on the substrate S. Fig. 2 is a perspective view showing the coating unit of Fig. 1. Fig. 2, the coating unit 200 includes a plate 210, a substrate moving member 220, a coating nozzle 230, and a substrate moving member 220. The width direction of the plate 210 is referred to as a first direction 12 and the longitudinal direction of the plate 210 is referred to as a second direction 14. As viewed from above, the first direction 12 and the second direction 14 are provided perpendicular to each other. A gas supply hole 212 is formed on the upper surface of the plate 210. The gas supply hole 212 receives gas from a gas supply line (not shown) connected thereto and injects gas. The gas injected from the gas supply holes 212 floats the substrate S placed on the plate 210.

The substrate moving member 220 is installed on both sides of the plate 210 facing the first direction 12. The substrate moving member 220 includes a substrate moving rail 222 and a holding member 224. The substrate moving rails 222 are provided long along the second direction 14 at each side of the plate 210. Each of the substrate moving rails 222 is provided with a holding member 224. The gripping member 224 grips the substrate S in a levitated state from the plate 210. The gripping member 224 is provided to be movable in the second direction 14 along the substrate moving rail 222. The gripping member 224 is movable in the second direction 14 together with the substrate S while supporting the floated substrate S. [

The application nozzle 230 supplies the first treatment liquid and the second treatment liquid onto the substrate S. The application nozzle 230 has a longitudinal direction toward the first direction 12. A slit-shaped injection port is formed on the bottom surface of the application nozzle 230, and the longitudinal direction of the injection port is provided so as to face the first direction 12. The length of the jetting port facing the first direction 12 may be provided corresponding to or longer than the width of the substrate S. [ For example, the first treatment liquid may be a photoresist and the second treatment liquid may be a solvent. The photoresist may be a sensitizing solution, and the solvent may be thinner. The photoresist and the solvent may be sprayed from one application nozzle 230 or a plurality of application nozzles 230, respectively.

The substrate moving member 220 includes a support 242, a vertical frame 244, a guide rail 246, and a driving unit (not shown). The support 242 is engaged with the application nozzle 230 at the top of the plate 210. The support 242 is provided so that its longitudinal direction is in the first direction 12. Both ends of the support 242 are connected to the vertical frame 244. Vertical frame 244 is provided extending downward from both ends of support 242. The lower end of the vertical frame 244 is installed in the guide rail 246. The guide rails 246 are located on both sides of the substrate moving rail 222, respectively. The guide rail 246 is provided so that its longitudinal direction faces the second direction 14. The driver moves the vertical frame 244 in the second direction 14 on the guide rail 246. As the vertical frame 244 is moved in the second direction 14, the support 242 and the application nozzle 230 are moved together in the second direction 14.

The drying unit 300 drys the substrate in a vacuum atmosphere. 3 is a cross-sectional view of the drying unit 300 of FIG. Referring to Fig. 3, the drying unit 300 includes a drying chamber 310, a stage 320, and a pressure-reducing member 314. An exhaust hole 312 is formed in the bottom edge region of the drying chamber 310. The stage 320 supports the substrate inside the drying chamber 310. A plurality of support pins 322 are provided on the upper surface of the stage 320. The support pins 322 are installed so as to protrude from the upper surface of the stage 320. Each support pin 322 may support the substrate such that the substrate is spaced apart from the stage 320. The pressure-reducing member 314 is connected to the exhaust hole 312 to form the inside of the drying chamber 310 in a vacuum atmosphere.

The bake unit 400 heat-treats the substrate S. Fig. 4 is a sectional view showing the bake unit of Fig. 1, and Fig. 5 is a front view showing the bake unit of Fig. 4 and 5, the bake unit 400 includes a bake chamber 410, a stage 420, a heating member 430, 350, a door assembly 440, and a blocking member 460 . The bake chamber 410 is provided to have a rectangular parallelepiped shape. The bake chamber 410 provides a processing space 412 therein. An opening 414 is formed in one side wall of the bake chamber 410. According to one example, the opening 414 may be provided with a slit facing the first direction. The opening 414 serves as an inlet through which the substrate S is put in and out. An exhaust hole 416 is formed in the bottom surface of the bake chamber 410 and an exhaust hole 416 is connected to the exhaust member 314. The exhaust member 314 exhausts the process by-products generated in the process space 412 through the exhaust hole 416. [ The processing space 412 can be provided at a lower pressure than the normal pressure in the process of evacuating the processing space 412 by the exhaust member 418. [

The stage 420 supports the substrate S in the bake chamber 410. A plurality of suction holes (not shown) and pinholes 422 are formed on the upper surface of the stage 420. The suction holes 332 are connected to a pressure-reducing member (not shown) to vacuum adsorb the substrate S placed on the stage 420. The vacuum adsorbed substrate S may be fixed to the stage 420. Each of the pinholes 422 is provided with a lift pin 424. The lift pin 424 is movable to the lift position and the lift position by the pin drive member 426. Here, the lift position is the position where the upper end of the lift pin 424 protrudes from the pinhole 422, and the lowered position is the position where the upper end of the lift pin 424 is provided to the pinhole 422. For example, the lift-up position may be provided at a position where the upper end of the lift pin 424 faces the opening 414.

The heating member 430 is positioned inside the stage 420. The heating member 430 heats the substrate S placed on the stage 420. For example, the heating member 430 may be provided as a heater.

The door assembly 440 opens and closes the opening 414. The door assembly 440 includes a door 442 and a door driver 444. The door 442 is provided in a plate shape larger than the opening 414 of the bake chamber 410. The door 442 is located outside the bake chamber 410. The door driver 444 moves the door 442 to the blocking position and the open position. The blocking position is the position where the door 442 is opposed to the opening 414 and the opening position is the position where the door 442 is out of the blocking position. The door driver 444 includes a support shaft 446 and a fixed shaft 448. Next, for convenience of explanation of the support shaft 446 and the fixing shaft 448, the door 442 is placed in the cutoff position as an example.

The support shaft 446 supports the bottom surface of the door 442. The support shaft 446 is fixedly coupled to the door 442. The support shaft 446 is provided so as to have a bar shape whose longitudinal direction is directed upward and downward. A plurality of support shafts 446 are provided. According to one example, the support shaft 446 is provided in two and can support the bottom edge region of the door 442, respectively. The fixed shaft 448 connects the support shaft 446 to one side wall of the bake chamber 410. The fixed shaft 448 is fixedly coupled to one side wall of the bake chamber 410. The fixed shaft 448 is provided so as to have a shape protruding from one side wall of the bake chamber 410. A plurality of fixing shafts 448 are provided. According to one example, the fixed shaft 448 may be provided in a number corresponding one-to-one with the support shaft 446. A lower region of the support shaft 446 is coupled to the fixed shaft 448. The support shaft 446 is hinged to the fixed shaft 448. The support shaft 446 is provided to rotate about an axis that faces the second direction. The door 442 is pivoted together with the support shaft 446 to be movable to the open position and the shutoff position.

The blocking member 460 prevents external airflow of the bake chamber 410 from entering the processing space 412. The blocking member 460 includes a gas nozzle 462, a gas supply line 464, a heater 466, a nozzle driver 470, and a controller 480. The gas nozzle 462 discharges the blocking gas to block the flow of the external air into the bake chamber 410. The gas nozzle 462 blocks the flow of external air through the opening 414 into the bake chamber 410 together with the substrate S. [ The gas nozzle 462 discharges the blocking gas in an air curtain manner to block the flow of the external air flow. The gas nozzle 462 is installed on one side wall of the bake chamber 410. The gas nozzle 462 is positioned above the opening 414. [ According to one example, the gas nozzle 462 may be positioned above the door 442, which is located in the blocking position so as not to interfere with the door 442. The gas nozzle 462 is provided so as to have a bar shape whose longitudinal direction is directed to the second direction. On the bottom surface of the gas nozzle 462, a discharge port for discharging gas is formed. The discharge port is provided in a slit shape toward the second direction. The discharge port is provided equal to or longer than the width of the opening 414. Alternatively, the discharge port may be provided in a plurality of circles. The discharge ports may be sequentially arranged along the longitudinal direction of the gas nozzle 462. The gas supply line 464 provides a shutoff gas to the gas nozzle 462. A valve 468 is provided on the gas supply line 464. The valve 468 opens and closes the gas supply line 464 to adjust the supply flow rate of the blocking gas. The heater 466 is installed on the gas supply line 464. The heater 466 heats the blocking gas provided on the gas supply line 464. According to one example, the heater 466 can heat the blocking gas to a temperature higher than normal temperature. The heater 466 can heat the blocking gas to the same temperature as the heating member 430 provided on the stage 420. [ The heater 466 may be located upstream of the valve 468 with respect to the direction in which the blocking gas is supplied on the gas supply line 464. The blocking gas may be an inert gas. For example, the barrier gas may be nitrogen gas (N ₂ ).

The nozzle driver 470 axially rotates the gas nozzle 462 such that the blocking gas is discharged in an outward direction away from one side wall of the bake chamber 410. The nozzle driver 470 axially rotates the gas nozzle 462 so that the discharge port of the gas nozzle 462 faces downwardly inclined as it is away from the bake chamber 410. The nozzle driver 470 is fixed to one side wall of the chamber. The nozzle driver 470 supports both ends of the gas nozzle 462. A nozzle nozzle 462 is hinged to the nozzle driver 470. The nozzle driver 470 axially rotates the gas nozzle 462 about the second direction.

The controller 480 controls the door driver 444 and the valve 468. The controller 480 causes the blocking gas to be discharged when the door 442 is opened. The controller 480 also controls the nozzle driver 470 such that the blocking gas causes the gas nozzle 462 to rotate while the substrate S is being carried into the opening 414. [

Next, a process of baking the substrate S using the above-described substrate processing apparatus will be described. 5 to 7 are sectional views showing a process of bringing the substrate into the bake unit. 5 to 7, the door 442 is moved from the blocking position to the open position. While the door 442 is moved to the open position, the gas nozzle 462 discharges the shielding gas to prevent the external air flow into the processing space 412. While the shielding gas is being discharged, the transfer robot 500 supporting the substrate S passes through the lower region of the opening 414. While the substrate S passes through the opening 414, the gas nozzle 462 is pivoted to adjust the discharge direction of the blocking gas in a downward inclined direction from the downward direction. When the substrate S is carried into the processing space 412, the lift pin 424 is moved to the lift position to take the substrate S from the transport robot 500. The conveying robot 500 is moved to the outside of the bake chamber 410, and the door 442 is moved to the shutting position. When the opening 414 is blocked, the gas nozzle 462 stops the discharge of the blocking gas. The lift pin 424 is moved to the lowered position to seat the substrate S on the stage 420. [ The heating member 430 heats the substrate S placed on the stage 420 to perform a baking process. When the bake process is completed, the lift pin 424 is moved to the lift position to lift the substrate S from the stage 420. The door 442 is moved to the open position, and the gas nozzle 462 discharges the blocking gas. The carrying robot 500 passes through the opening 414 and takes over the substrate S from the lift pin 424. [ When the substrate S is placed on the conveying robot 500, the substrate S is taken out of the chamber.

In the above-described embodiment, the blocking member 460 has been described as being provided in the apparatus performing the bake process. However, the barrier member 460 of the present embodiment is not limited to the bake process, and can be variously applied to a process that is performed at a temperature higher than room temperature, such as a plasma process and a deposition process.

410: chamber 440: door assembly
460: blocking member 462: gas nozzle
464: gas supply line 466: heater

Claims

A chamber formed with an opening through which the substrate is introduced and unloaded on one surface, the chamber providing a processing space therein;
A support plate positioned in the processing space and supporting the substrate;
A heating member provided in the support plate to heat the substrate supported on the support plate;
A door assembly having a door for opening and closing the opening;
And a blocking member for blocking external airflow from entering the processing space,
The blocking member
A gas nozzle provided on the one surface;
A gas supply line for supplying a shutoff gas to the gas nozzle;
And a heater provided on the gas supply line to heat the shielding gas provided through the gas supply line.

The method according to claim 1,
Wherein the gas nozzle is provided to discharge the blocking gas downward from the top of the opening.

3. The method of claim 2,
And the longitudinal direction of the gas nozzle is provided so as to be in a direction parallel to the longitudinal direction of the opening.

The method of claim 3,
The blocking member
Further comprising a nozzle driver for rotating the gas nozzle about a longitudinal axis of the gas nozzle as a center axis.

5. The method according to any one of claims 1 to 4,
Wherein the blocking member further comprises a valve for opening and closing the gas supply line,
Further comprising a controller for controlling the door assembly and the valve,
And the controller causes the shield gas to be discharged when the opening is opened.

An opening step of opening an opening formed in one surface of the chamber;
A blocking step of blocking a flow of external air into the opening by discharging a blocking gas to the opening of the gas nozzle;
A carrying-in step of carrying a substrate into the chamber while the blocking gas is being discharged;
And a heating step of heating the substrate placed in the chamber,
Wherein the blocking gas is provided at a temperature higher than room temperature.

The method according to claim 6,
Wherein the gas nozzle is provided to discharge the blocking gas downward from the top of the opening.

8. The method of claim 7,
Wherein the blocking gas changes the discharge angle in a direction away from the chamber while the substrate is brought into the chamber through the opening.

9. The method according to any one of claims 6 to 8,
Wherein the blocking gas is provided as an inert gas.

A method of performing a step of heat-treating a substrate,
Introducing the substrate into the chamber through an opening in the chamber,
A substrate processing method for supplying a heated shielding gas to the opening to prevent an external air flow into the chamber while the substrate is being carried and to prevent the temperature inside the chamber from being lowered,

11. The method of claim 10,
Wherein the process is provided in a bake process.

12. The method of claim 11,
Wherein the blocking gas is discharged downward from the top of the opening so as to be parallel to one surface of the chamber in which the opening is formed.

13. The method of claim 12,
Wherein the blocking gas changes the discharge angle in a direction away from the chamber while the substrate is brought into the chamber through the opening.