KR20140096846A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- KR20140096846A KR20140096846A KR1020130009971A KR20130009971A KR20140096846A KR 20140096846 A KR20140096846 A KR 20140096846A KR 1020130009971 A KR1020130009971 A KR 1020130009971A KR 20130009971 A KR20130009971 A KR 20130009971A KR 20140096846 A KR20140096846 A KR 20140096846A
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- Prior art keywords
- light emitting
- layer
- emitting device
- semiconductor layer
- buffer layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims abstract description 30
- 229910052738 indium Inorganic materials 0.000 claims description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 6
- 230000003139 buffering effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 162
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000008393 encapsulating agent Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(iii) oxide Chemical compound O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008842 WTi Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006128 poly(nonamethylene terephthalamide) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
An embodiment relates to a light emitting device and a light emitting device package including the same.
Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.
When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band. It is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes an LED.
Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.
The luminescent element may be distorted due to lattice mismatch between a plurality of layers therein. Therefore, it is necessary to study a method of solving the lattice mismatching while maintaining the optical and electrical characteristics.
The light emitting device package is manufactured by manufacturing a light emitting device on a substrate, separating the light emitting device chip through dieseparation, which is a sawing process, and then diebonding the light emitting device chip to a package body. Wire bonding and molding can be performed, and the test can proceed.
An embodiment of the present invention provides a light emitting device in which a buffer layer containing indium is disposed on an electron blocking layer to minimize defects due to lattice mismatch, thereby increasing light efficiency.
A light emitting device according to an embodiment of the present invention includes a substrate; A first semiconductor layer disposed on a substrate; An active layer disposed on the first semiconductor layer; An electron blocking layer disposed on the active layer; A second semiconductor layer disposed on the electron blocking layer and configured to restrict leakage of electrons supplied by the first semiconductor layer into the second semiconductor layer; And a buffer layer which is disposed between the electron blocking layer and the second semiconductor layer and has an energy band gap smaller than that of the electron blocking layer and whose energy band gap varies with height.
The light emitting device and the light emitting device package of the various embodiments of the present invention have one or more of the following effects.
The light emitting device according to one embodiment includes a buffer layer, thereby improving the warpage and minimizing defects.
The light emitting device according to one embodiment can change the energy band of the buffer layer according to the height, thereby minimizing the piezoelectric effect due to the lattice mismatch.
1 is a cross-sectional view illustrating a light emitting device according to an embodiment,
2 is a view showing an energy band gap of a light emitting device according to an embodiment,
3 is a view showing an energy band gap calculated through an experiment of a light emitting device according to an embodiment,
FIG. 4 is a graph showing the internal quantum efficiency of the light emitting device according to one embodiment,
5A and 5B are a perspective view and a cross-sectional view of a light emitting device package including a light emitting device according to an embodiment,
6A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment,
FIG. 6B is a cross-sectional view illustrating a lighting device including a light emitting device package according to an embodiment,
7 is a conceptual view illustrating a liquid crystal display device including a light emitting device package according to an embodiment,
8 is a conceptual view illustrating a liquid crystal display device including a light emitting device package according to an embodiment.
BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.
The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.
The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.
Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.
Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.
Hereinafter, embodiments will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view illustrating a light emitting device according to an embodiment, and FIG. 2 is a diagram illustrating an energy band gap of the light emitting device according to one embodiment.
1, a
The
The
The
The
The
The
The
The
The
When the
The
The well layer (not shown) may have a smaller energy bandgap than the barrier layer (not shown). The well layer (not shown) may have a smaller energy bandgap than the
The
The
The doping concentration of the conductive dopant in the
When the
A second electrode (not shown) may be disposed in one region of the
The first electrode (not shown) and the second electrode (not shown) may be formed of a conductive material such as indium (In), cobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium ), Platinum (Pt), ruthenium (Ru), rhenium (Re), magnesium (Mg), zinc (Zn), hafnium (Hf), tantalum (Ta), rhodium (Ti), Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, Or a multi-layered structure using a metal or an alloy selected from the group consisting of a metal, a metal, and an alloy.
A transparent electrode layer (not shown) may be disposed between the second electrode (not shown) and the
For example, the transparent electrode layer (not shown) may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x, RuO x, RuO x / ITO, Ni, Ag, Ni / IrO x / Au, And at least one of Ni / IrO x / Au / ITO.
The
The
The
The piezoelectric field effect may occur due to the pressure due to the difference in lattice constant between the
The
The
Referring to FIG. 2, the
The
The content of indium may gradually increase until the
The
The
FIG. 3 is a graph illustrating an experimentally calculated energy band gap of the
In the graph shown in Fig. 3, the abscissa is the height (nm) of the layer and the ordinate is the energy (eV). 3 may be any one of a plurality of well layers of the
The energy band of the light emitting element can be distorted in accordance with the piezoelectric effect. If the defect due to the piezoelectric effect is too severe, the light emitting device may not be matched due to the deformation of the conduction band lower well layer and the balance band upper well layer. When the piezoelectric effect is excessively generated, the positions of the highest density of electrons and the highest density of holes are not matched with each other, so that recombination of electrons and holes may be difficult.
When the graph of FIG. 3 is confirmed, it can be confirmed that the portion having the highest density of electrons and holes in the well layer of the
4 is a graph showing the internal quantum efficiency (IQE) of the light emitting device of one embodiment.
In the graph of Fig. 4, the abscissa is the current value and the ordinate is the internal quantum efficiency.
Referring to FIG. 4, the purple line shows a change in the internal quantum efficiency of the light emitting device without the buffer layer inserted therein, and the blue line shows the change in the internal quantum efficiency of the light emitting device with the buffer layer inserted.
In the case of the light emitting device in which the buffer layer is not inserted, it can be seen that the quantum efficiency decreases gradually as the current increases. However, it can be confirmed that the internal quantum efficiency is maintained in the light emitting device inserted with the buffer layer.
5A is a perspective view illustrating a light emitting
5A and 5B, the light emitting
The
The inner surface of the
The shape of the cavity formed in the
The
The phosphor (not shown) may be selected according to the wavelength of the light emitted from the
The fluorescent material (not shown) included in the
The phosphor (not shown) may be excited by the light having the first light emitted from the
When the
The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.
The
The
The
The
The
The
The light emitting
A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting
The light emitting
FIG. 6A is a perspective view showing an
6B is a cross-sectional view of the
6A and 6B, the
The light emitting
The light emitting
The light emitting
The
The
The light generated from the light emitting
The finishing
7 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.
7, the
The liquid
The
The thin
The thin
The
The light emitting
The light emitting
The
8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 7 are not repeatedly described in detail.
8 is a direct-view liquid
The
The light emitting
The light emitting
The
The light emitted from the light emitting
The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.
100: Light emitting element
110: substrate
132: first semiconductor layer
134: active layer
136: second semiconductor layer
140: electron blocking layer
150: buffer layer
Claims (10)
A first semiconductor layer disposed on the substrate;
An active layer disposed on the first semiconductor layer;
An electron blocking layer disposed on the active layer and configured to restrict leakage of electrons supplied by the first semiconductor layer to the second semiconductor layer;
A second semiconductor layer disposed on the electron blocking layer; And
And a buffer layer disposed between the electron blocking layer and the second semiconductor layer and having an energy band gap smaller than that of the electron blocking layer and having an energy band gap varying with height.
Wherein the buffer layer has a parabolic energy band.
Wherein the slope of the energy band gradually decreases until the buffer layer reaches the middle in the height direction on the lower surface.
Wherein a slope of the energy band is gradually increased until the buffer layer reaches the upper surface in the middle in the height direction.
Wherein the buffer layer comprises indium gallium nitride (InGaN).
Wherein the buffer layer varies in indium (In) content depending on the height.
Wherein the buffer layer gradually increases in indium content until reaching the middle in the height direction on the lower surface.
Wherein the buffer layer gradually decreases in indium content until the buffer layer reaches the upper surface in the height direction.
Wherein the buffer layer has a thickness of 10 nm to 48 nm.
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KR20160084033A (en) * | 2015-01-05 | 2016-07-13 | 엘지이노텍 주식회사 | Light emitting device |
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KR20100003331A (en) * | 2008-06-26 | 2010-01-08 | 서울옵토디바이스주식회사 | Light emitting device and method of manufacturing the same |
JP2010212657A (en) * | 2009-03-06 | 2010-09-24 | Chung Hoon Lee | Light emitting device |
KR20120075209A (en) * | 2010-12-28 | 2012-07-06 | 엘지디스플레이 주식회사 | Method for manufacturing lcd, lcd module including led |
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KR20090083566A (en) * | 2008-01-30 | 2009-08-04 | 엘지전자 주식회사 | Nitride semiconductor device and method for manufacturing the same |
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KR20100003331A (en) * | 2008-06-26 | 2010-01-08 | 서울옵토디바이스주식회사 | Light emitting device and method of manufacturing the same |
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