KR20130107117A

KR20130107117A - Apparatus for synthesizing graphene

Info

Publication number: KR20130107117A
Application number: KR1020120028956A
Authority: KR
Inventors: 윤종혁
Original assignee: 삼성테크윈 주식회사
Priority date: 2012-03-21
Filing date: 2012-03-21
Publication date: 2013-10-01

Abstract

The present invention relates to a graphene synthesis device. The present invention is a vacuum unit for vacuuming the catalyst metal; An annealing unit to anneal the catalyst metal; Graphene synthesis unit for synthesizing graphene on the surface of the catalyst metal; And a cooling unit for cooling the graphene.

Description

Graphene synthesis device {Apparatus for synthesizing graphene}

The present invention relates to nonmetallic elements, and more particularly to an apparatus for synthesizing graphene on catalytic metals.

With the development of science and technology, the development of new materials using nanotechnology is actively progressing. Among them, research on carbon-containing materials such as carbon nanotubes, diamonds, graphite, graphenes, and the like has been intensively studied in the field of nanotechnology. In particular, graphene is a two-dimensional carbon allotrope and has very useful properties that differ from conventional materials. One of the characteristics of graphene is that when electrons move in graphene, it flows as if the mass of electrons is zero. This means that the electrons flow at the speed at which light in the vacuum moves, ie at the speed of light. Graphene has an electron mobility of up to 200,000 cm2 / Vs. Graphene exhibits an unusual half-integer quantum Hall effect on electrons and holes, and a fractional quantum Hall effect when suspended in the air.

The method for preparing graphene includes a peeling method for physically separating a layer of graphene from graphite, a chemical oxidation / reduction method for obtaining graphene by dispersing graphite in a dispersion and chemically reducing the silicon carbide (SiC) substrate. The pyrolysis method, and the chemical vapor deposition method to obtain a graphene layer through high temperature pyrolysis at, are the chemical vapor deposition method is a method that can synthesize the highest quality graphene.

An apparatus for producing graphene by chemical vapor deposition is disclosed in US Patent Publication No. US 2010201012727. The patent discloses an apparatus for manufacturing graphene in one chamber, and when manufacturing the graphene film according to the apparatus, the graphene manufacturing time is long, and thus, the manufacturing cost of the graphene film is high.

The present invention is to provide a graphene synthesis apparatus that the time for synthesizing graphene on the catalytic metal is shortened.

The present invention to achieve the above object,

A vacuum unit for vacuuming the catalyst metal; An annealing unit to anneal the catalyst metal; Graphene synthesis unit for synthesizing graphene on the surface of the catalyst metal; And it provides a graphene synthesis device having a cooling unit for cooling the graphene.

The vacuum unit, the annealing unit, the graphene synthesis unit, and the cooling unit are separated from each other.

A chamber having a catalyst metal mounted therein, the vacuum unit having a vacuum controller for vacuuming the inside of the chamber when the chamber is mounted, and the annealing unit annealing the catalyst metal mounted inside the chamber when the chamber is mounted. And a graphene synthesis controller for synthesizing graphene with a catalyst metal mounted inside the chamber when the chamber is mounted, and the cooling unit is inside the chamber when the chamber is mounted. It may be provided with a cooling controller for cooling the graphene mounted on.

The vacuum controller, the annealing controller, the graphene synthesis controller and the cooling controller are each connected by a conveyor, and the chamber may be moved on the conveyor.

The vacuum controller is provided with an air discharger for discharging the air inside the chamber to the outside when the chamber is mounted, the annealing controller supplies a gas to the chamber and the first heater for heating the chamber when the chamber is mounted The first gas supply and the first gas discharger for discharging the gas in the chamber to the outside is installed, the graphene synthesis controller is equipped with a second heater for heating the chamber and the gas when the chamber is mounted The second gas supplier for supplying and the second gas discharger for discharging the gas in the chamber to the outside is provided, and when the chamber is mounted in the cooling controller is supplied to the chamber by supplying the cooling gas to the inside of the chamber The third gas supply for cooling the graphene and the third gas discharger for discharging the gas inside the chamber to the outside It can chidoel.

By the roll-to-roll method, the catalyst metal may move between the vacuum chamber, the annealing chamber, the graphene synthesis chamber, and the cooling chamber.

And a rotating device for transferring the catalyst metal, wherein the rotating device discharges the catalyst metal from the vacuum chamber and introduces the catalyst metal into the annealing chamber, and discharges the catalyst metal from the annealing chamber to the graphene synthesis chamber. Into the inside of the, the catalyst metal may be discharged from the graphene synthesis chamber and introduced into the cooling chamber.

The graphene synthesis device of the present invention includes a separate device for each process to synthesize graphene on a catalyst metal.

Therefore, the graphene synthesis process may be performed for each process.

As such, according to the present invention, since the graphene synthesis process proceeds step by step, that is, the graphene synthesis is simultaneously performed in each process, the graphene synthesis time is drastically shortened, thereby allowing mass production of graphene. .

1 is a block diagram of a graphene synthesis device according to the present invention.
2 is a cross-sectional view of a catalytic metal.
3 is a cross-sectional view of a material synthesized with graphene on a catalytic metal.
4 is a cross-sectional view schematically showing the structure of a graphene synthesis device according to a first embodiment of the present invention.
5 is a cross-sectional view schematically illustrating a structure of a graphene synthesizing apparatus according to a second embodiment of the present invention.
6 is a cross-sectional view schematically showing the structure of a graphene synthesis device according to a first embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. Like reference numerals in the drawings denote like elements.

1 is a block diagram of a graphene synthesis device according to the present invention. Referring to FIG. 1, the graphene synthesizing apparatus 101 includes a vacuum unit 111, an annealing unit 121, a graphene synthesis unit 131, and a cooling unit 141. The graphene synthesis apparatus 101 synthesizes graphene (221 in FIG. 3) on the catalytic metal (211 in FIGS. 2 and 3) using a thermal chemical vapor deposition. The catalytic metals (211 in FIGS. 2 and 3) include nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), gold (Au), silver (Ag), aluminum (Al), and chromium (Cr). ), Copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium ( U), vanadium (V), palladium (Pd), yttrium (Y), and zirconium (Zr).

The vacuum unit 111 vacuums the catalyst metal (211 of FIGS. 2 and 3) used to synthesize graphene (221 of FIG. 3). Vacuum degree

~

It is preferable to set it to [Torr].

The annealing unit 121 anneals the catalyst metal (211 of FIGS. 2 and 3). The annealing unit 121 anneals the catalyst metal (211 of FIGS. 2 and 3) using hydrogen gas or hydrogen and argon gas. In order to anneal the catalyst metal (211 in FIGS. 2 and 3), the catalyst metal (211 in FIGS. 2 and 3) is heated to a specific temperature, such as 500 to 1000 [° C.]. In the process of annealing the catalyst metal (211 of FIGS. 2 and 3), impurities included in the catalyst metal (211 of FIGS. 2 and 3) may be removed by hydrogen. In other words, pretreatment of the catalyst metal (211 in FIGS. 2 and 3) is also performed by annealing.

The graphene synthesis unit 131 synthesizes graphene (221 of FIG. 3) on the surface of the catalyst metal (211 of FIGS. 2 and 3) where the annealing is completed. That is, graphene (221 in FIG. 3) is synthesized on the catalyst metal 211 as shown in FIG. 3. The graphene synthesis unit 131 may use a catalyst metal (211 of FIGS. 2 and 3) by using a gas obtained by mixing a graphene synthesis raw material fluid such as a gas or liquid containing carbon with one of an inert gas such as hydrogen gas or argon. Graphene (221 of FIG. 3) is synthesized on the substrate. In order to synthesize graphene (221 in FIG. 3) on the surface of the catalyst metal (211 in FIGS. 2 and 3), first, the catalyst metal (211 in FIGS. 2 and 3) is subjected to a specific temperature such as 500 to 1000 [° C.]. In the group consisting of the graphene synthesis raw material fluid or carbon source, for example, carbon monoxide (CO), carbon dioxide (CO2), acetylene (C2H2), methane (CH4), ethylene (C2H4), benzene (C6H6) Graphene (221 of FIG. 3) is synthesized on the catalytic metal (211 of FIGS. 2 and 3) using any one selected.

The cooling unit 141 cools the heated graphene (221 of FIG. 3) while the graphene (221 of FIG. 3) is synthesized.

As shown in FIG. 1, the graphene synthesis apparatus 101 according to the present invention includes a vacuum unit 111, an annealing unit 121, a graphene synthesis unit 131, and a cooling unit 131, respectively. The graphene synthesis process is simultaneously performed in each processing apparatus, thereby greatly reducing the graphene synthesis time.

That is, in the prior art, the synthesis time of graphene (221 of FIG. 3) is long by performing all four processes in one chamber, whereas the present invention simultaneously synthesizes graphene (221 of FIG. 3) by process. Therefore, the synthesis time of the graphene (221 of FIG. 3) can be significantly shortened. This enables mass production of graphene (221 in FIG. 3).

4 is a cross-sectional view schematically showing the structure of a graphene synthesis device according to a first embodiment of the present invention. Referring to FIG. 4, the graphene synthesis apparatus includes a vacuum controller 111a, an annealing controller 121a, a graphene synthesis controller 131a, and a cooling controller 141a.

Conveyors 151, 152, and 153 are installed in the vacuum controller 111a, the annealing controller 121a, the graphene synthesis controller 131a, and the cooling controller 141a.

An air ejector 115 is provided in the vacuum controller 111a. Therefore, when a chamber (not shown) is mounted to the vacuum controller 111a, the air ejector 115 opens an outlet (not shown) formed in the chamber to exhaust the air inside the chamber to bring out the inside of the chamber into a vacuum state. Make. Inside the chamber, a graphene synthesis catalyst metal (211 of FIGS. 2 and 3) is mounted. The chamber equipped with the catalytic metal (211 of FIGS. 2 and 3) therein may be transferred to the vacuum controller 111a by the conveyor 151 or may be mounted directly to the vacuum controller 111a without the conveyor 151. When the chamber is mounted in the vacuum controller 111a, the vacuum controller 111a fixes the chamber, and the air ejector 115 opens the outlet to discharge the air inside the chamber out. The interior of the chamber has a certain degree of vacuum,

~

When [Torr] is reached, the air ejector 115 closes the outlet. Subsequently, the chamber is transferred to the annealing controller 121a through the conveyor 152.

The annealing controller 121a is provided with a first heater 126, a first gas injector 124, and a first gas discharger 125. Therefore, when the chamber having a vacuum inside is transferred and mounted through the conveyor 152, the annealing controller 121a fixes the chamber and executes an annealing process. That is, first, the first heater 126 heats the interior of the chamber to a specific temperature, for example 500 to 1000 [° C]. When the chamber is heated to the specific temperature, the first gas injector 124 injects hydrogen or hydrogen and argon gas into the chamber. Thus, the catalytic metal (211 in FIGS. 2 and 3) is annealed. The first gas discharger 125 discharges the gas filled out inside the chamber. The first heater 126 is maintained heated to the specific temperature before the chamber is mounted to the annealing controller 121a to shorten the synthesis time of the graphene (221 of FIG. 3).

The air ejector 115 of the vacuum controller may use the same vacuum pump as the first gas ejector 125 of the annealing controller and the second gas ejector 135 of the graphene synthesis controller. In addition, the same vacuum pump may be provided in the third gas discharger 135 of the cooling controller. When the gas for cooling is injected, it is possible to cool by simultaneously extracting to the third gas discharger 135, and after cooling, the third gas discharger 135 may be paused to take out the graphene (221 of FIG. 3).

As the first heater 126, a laser device for irradiating photons or an electron beam device for irradiating electrons may be used. As an example, an annealing treatment of a catalytic metal (211 in FIGS. 2 and 3) can be performed with a Nd / YAG (neodymium-doped yttrium-aluminum garnet) laser at a wavelength in the range of 200 [nm] to 600 [nm]. have.

The graphene synthesis controller 131a is provided with a second heater 136, a second gas injector 134, and a second gas discharger 135. Therefore, when the chamber equipped with the catalytic metal annealed therein (211 of FIGS. 2 and 3) is transferred and mounted through the conveyor 152, the graphene synthesis controller 131a fixes the chamber, and the graphene ( The synthesis process of 221 of FIG. 3 is performed. That is, first, the second heater 136 heats the interior of the chamber to a specific temperature, such as 500 to 1000 [° C]. When the chamber is heated to the specific temperature, the second gas injector 134 injects a graphene synthesis raw material such as a gas or liquid containing carbon into the chamber together with one of hydrogen gas or an inert gas such as argon, or One selected from a carbon source is injected into the chamber to synthesize graphene (221 in FIG. 3) on the catalytic metal (211 in FIGS. 2 and 3). The second gas discharger 135 discharges the gas filled out inside the chamber. The second heater 136 is maintained heated to the specific temperature before the chamber is mounted to the graphene synthesis controller 131a in order to shorten the synthesis time of the graphene (221 of FIG. 3).

When an electrode (not shown) is installed on the graphene synthesis controller 131a, and the chamber is mounted on the graphene synthesis controller 131a, the electrode is installed inside the chamber, and a radio frequency (RF) is applied to the electrode. When a signal is applied, free electrons are emitted from the electrode and collide with atoms injected into the chamber, for example, argon atoms to ionize the argon atoms. The electrons emitted during the generation of argon ions and the free electrons supplied from the electrode continuously accelerate and collide with each other to generate more ions, while on the other hand, the recombination of electron-ions, the collision between the electrode and the inner wall of the chamber, etc. The electrons are also destroyed due to this. When the electron generation and extinction ratios are the same, a stable plasma is formed. In this state, when a gas containing carbon is injected into the chamber, argon ions collide with the carbon gas to dissociate the carbon. Dissociated carbon is deposited on the surface of the catalytic metal (211 of FIGS. 2 and 3) to form graphene (221 of FIG. 3).

In the graphene synthesis controller 131a, the second heater 136 is not limited to plasma heating, but various methods such as chemical vapor deposition (CVD) of a general heating method may be applied. Graphene synthesized by thermal chemical vapor deposition (Thermal CVD) is superior to the actual plasma CVD method. That is, like the laser annealing treatment described later, the heating heater can be applied to any method capable of raising the temperature up to a temperature capable of decomposing the source gas.

The annealing controller 121a and the graphene synthesis controller 131a may each have a device capable of controlling the total pressure in the chamber. The device acts as a valve to control the flow rate of gas flowing into or out of the chamber, thereby controlling the internal pressure of the chamber.

The third gas injector 144 and the third gas discharger 145 are installed in the cooling controller 141a. Accordingly, when the chamber equipped with the catalytic metal (221 of FIG. 3) synthesized therein (211 of FIGS. 2 and 3) is transported and mounted through the conveyor 152, the cooling controller 141a performs the chamber. Is fixed and the cooling process is executed. That is, first, a cooling gas or a cooling liquid is injected into the chamber through the third gas injector 144 to cool the graphene (221 of FIG. 3) formed on the catalyst metal (211 of FIGS. 2 and 3). The third gas discharger 145 discharges the gas filled out inside the chamber. The cooling controller 141a may include a cooler (not shown) instead of the third gas injector 144 and the third gas discharger 145 to cool the graphene (221 of FIG. 3) mounted inside the chamber. . The cooler may be installed in the cooling controller 141a or may be installed inside the chamber. In addition, the cooling controller 141a may cool the graphene (221 of FIG. 3) by cooling the graphene (221 of FIG. 3) by using air at room temperature or inject cold air into the chamber.

5 is a cross-sectional view schematically illustrating a structure of a graphene synthesizing apparatus according to a second embodiment of the present invention. Referring to FIG. 5, the graphene synthesis apparatus includes a vacuum chamber 111b, an annealing chamber 121b, a graphene synthesis chamber 131b, and a cooling chamber 141b. The vacuum chamber 111b, the annealing chamber 121b, the graphene chamber 131b and the cooling chamber 141b are each fixedly installed in one place.

An air ejector 115 is provided in the vacuum chamber 111b. Therefore, when the catalytic metal (211 of FIGS. 2 and 3) is mounted in the vacuum chamber 111b, the air exhauster 115 opens the exhaust port installed in the chamber and exhausts the air inside the chamber to the outside of the chamber. To vacuum. The catalytic metal (211 of FIGS. 2 and 3) is introduced into the vacuum chamber 111b from the outside by the material supply devices 161 and 162. The interior of the chamber has a certain degree of vacuum,

~

When [Torr] is reached, the air ejector 115 closes the outlet. Subsequently, the catalytic metal (211 of FIGS. 2 and 3) mounted in the vacuum chamber 111b is transferred to the annealing chamber 121b.

The first heater 126, the first gas injector 124, and the first gas discharger 125 are provided in the annealing chamber 121b. Therefore, when the catalyst metal (211 of FIGS. 2 and 3) is introduced, the annealing chamber 121b performs an annealing process. That is, first, the first heater 126 heats the interior of the chamber to a specific temperature, for example 500 to 1000 [° C]. When the chamber is heated to the specific temperature, the first gas injector 124 injects hydrogen or hydrogen and argon gas into the annealing chamber 121b. Thus, the catalytic metal (211 in FIGS. 2 and 3) is annealed. The first gas discharger 125 discharges the gas filled out inside the chamber. In order to shorten the synthesis time of the graphene (221 of FIG. 3), the first heater 126 may anneal the annealing chamber 121b before the catalytic metal (211 of FIGS. 2 and 3) is mounted in the annealing chamber 121b. Keep heated to a certain temperature. As the first heater 126, a laser device for irradiating photons or an electron beam device for irradiating electrons may be used. As an example, an annealing treatment of a catalytic metal (211 in FIGS. 2 and 3) can be performed with a Nd / YAG (neodymium-doped yttrium-aluminum garnet) laser at a wavelength in the range of 200 nm to 600 nm. have.

Instead of separately installing the vacuum chamber 111b, the inside of the annealing chamber 121b may be vacuumed by using the first gas ejector 125 installed in the annealing chamber 121b. In this case, the annealing process is performed while the annealing chamber 121b is vacuumed first.

The graphene synthesis chamber 131b is provided with a second heater 136, a second gas injector 134, and a second gas discharger 135. Therefore, when the annealed catalyst metal (211 of FIGS. 2 and 3) is mounted, the graphene synthesis chamber 131b fixes the catalyst metal (211 of FIGS. 2 and 3) and the graphene (221 of FIG. 3). Run the synthesis process. That is, first, the second heater 136 heats the interior of the graphene synthesis chamber 131b to a specific temperature, for example, 500 to 1000 [° C]. When the graphene synthesis chamber 131b is heated to the specific temperature, the second gas injector 134 may convert the graphene synthesis raw material such as a gas containing carbon or a liquid together with one of hydrogen gas or an inert gas such as argon. Graphene (221 in FIG. 3) is synthesized on the catalytic metal (211 in FIGS. 2 and 3) by injecting into the fin synthesis chamber (131b) or injecting one selected from the carbon sources into the graphene synthesis chamber (131b). do. The second gas discharger 135 discharges the gas filled out inside the graphene synthesis chamber 131b to the outside. In order to shorten the synthesis time of the graphene (221 of FIG. 3), the second heater 136 may include a graphene synthesis chamber (211 of FIG. 2 and FIG. 3) before the catalyst metal (211 of FIG. 3) is introduced into the graphene synthesis chamber 131b. 131b) is kept heated to the specific temperature.

When an electrode (not shown) is installed on the graphene synthesis chamber 131b and a radio frequency (RF) signal is applied to the electrode, free electrons are emitted from the electrode to form an interior of the graphene synthesis chamber 131b. It collides with atoms injected into, for example, argon atoms to ionize argon atoms. The electrons emitted during the generation of argon ions and the free electrons supplied from the electrode continually accelerate and collide to generate more ions, while on the other hand the recombination of electron-ions, the inner wall of the electrode and graphene synthesis chamber 131b The electrons are also destroyed due to collision with them. When the electron generation and extinction ratios are the same, a stable plasma is formed. In this state, when a gas containing carbon is injected into the graphene synthesis chamber 131b, argon ions collide with the carbon gas to dissociate the carbon. Dissociated carbon is deposited on the surface of the catalytic metal (211 of FIGS. 2 and 3) to form graphene (221 of FIG. 3).

The third gas injector 144 and the third gas discharger 145 are installed in the cooling chamber 141b. Therefore, when the catalyst metal (211 of FIGS. 2 and 3) into which graphene (221 of FIG. 3) is synthesized is introduced, the cooling chamber 141b fixes and cools the catalyst metal (211 of FIGS. 2 and 3). Run the process. That is, first, the cooling gas or the cooling liquid is injected into the cooling chamber 141b through the third gas injector 144 to cool the graphene (221 of FIG. 3) formed on the catalyst metal (211 of FIGS. 2 and 3). Let's do it. The third gas discharger 145 discharges the gas filled out inside the cooling chamber 141b to the outside. The cooling chamber 141b has a cooler (not shown) therein instead of the third gas injector 144 and the third gas discharger 145 and a catalyst metal (211 of FIGS. 2 and 3) is mounted on the cooler. The fin 221 of FIG. 3 may be cooled. In addition, the graphene (221 of FIG. 3) may be cooled by using atmospheric air or cold air without using the cooler.

The graphene synthesis apparatus illustrated in FIG. 5 includes material supply devices 161 and 162 to transfer the catalytic metal (211 in FIGS. 2 and 3) to an adjacent chamber in a roll to roll manner. The material supply apparatuses 161 and 162 wind and support one side of the catalyst metal (211 of FIGS. 2 and 3) and wind the rotatable first roll 161 and the other side of the catalyst metal (211 of FIGS. 2 and 3). And a rotatable second roll 162. Although not shown in the figure, the first roll 161 and the second roll 162 may be rotated by a motor, a belt, a chain, or the like. The catalytic metal (211 in FIGS. 2 and 3) passes through the inlets and outlets of the chambers 111, b, 121b, 131b, 141b by the material supply apparatus 161, 162. And 141b). The present invention is not limited to the method of supplying the above-described catalyst metal (211 of FIGS. 2 and 3), and various techniques may be used by modifying it, such as using a conveyor belt or a transfer robot.

6 is a cross-sectional view schematically illustrating a structure of a graphene synthesizing apparatus according to a third embodiment of the present invention. Referring to FIG. 6, the graphene synthesizing apparatus includes a vacuum chamber 111c, an annealing chamber 121c, a graphene synthesis chamber 131c, and a cooling chamber 141c, are installed in a circular shape, and are disposed in a circular central portion. The feeder 171 is installed.

The feeder 171 rotates in a circular manner to transfer the catalytic metal (211 in FIGS. 2 and 3) to the adjacent chamber. For example, the transporter 171 flows the catalyst metal (211 of FIGS. 2 and 3) into the vacuum chamber 111c from the outside and the catalyst metal (211 of FIGS. 2 and 3) from the vacuum chamber 111c. To the annealing chamber 121c, the annealed catalyst metal (211 in FIGS. 2 and 3) is discharged from the annealing chamber 121c and introduced into the graphene synthesis chamber 131c, and graphene (221 in FIG. 3). ) And the synthesized catalyst metal (211 of FIGS. 2 and 3) flows out of the graphene synthesis chamber 131c and enters the cooling chamber 141c, and the catalyst metal cooled in the cooling chamber 141c (FIGS. 2 and 3). 211 out of 3 outflow.

In the graphene synthesizing apparatus of FIG. 6, in addition to the method of flowing out the catalytic metal in each chamber to proceed with the process, a method of directly transferring the respective chambers by equally matching each process lead time may be possible.

Four arms of the conveyor 171, the ends of the arms are provided with supports 174 for supporting the catalytic metal (211 in Figures 2 and 3), the ends of the arms The hinges 173 and 173 may be provided between the arm and the rotation axis of the center of the conveyor 171 to fold and unfold the arms.

Since the structure of the vacuum chamber 111c, the annealing chamber 121c, the graphene synthesis chamber 131c, and the cooling chamber 141c may be configured in the same manner as shown in FIG. 5, a redundant description thereof will be omitted.

Although the present invention has been described with reference to the embodiments shown in the drawings, it is to be understood that various modifications and equivalent embodiments may be made by those skilled in the art without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims

A vacuum unit for vacuuming the catalyst metal;
An annealing unit to anneal the catalyst metal;
Graphene synthesis unit for synthesizing graphene on the surface of the catalyst metal; And
Graphene synthesizing apparatus comprising a cooling unit for cooling the graphene.

The method of claim 1,
The catalyst metal is graphene synthesis device, characterized in that the movement in the order of the vacuum unit, annealing unit, graphene synthesis unit and the cooling unit.

The method of claim 1,
Graphene synthesis device, characterized in that the vacuum unit, annealing unit, graphene synthesis unit and the cooling unit are separated from each other.

The method of claim 1,
A chamber having a catalyst metal mounted therein, the vacuum unit having a vacuum controller for vacuuming the inside of the chamber when the chamber is mounted, and the annealing unit annealing the catalyst metal mounted inside the chamber when the chamber is mounted. And a graphene synthesis controller for synthesizing graphene with a catalyst metal mounted inside the chamber when the chamber is mounted, and the cooling unit is inside the chamber when the chamber is mounted. Graphene synthesizing apparatus comprising a cooling controller for cooling the graphene mounted on.

5. The method of claim 4,
Graphene synthesizing apparatus, characterized in that the vacuum controller, the annealing controller, the graphene synthesis controller and the cooling controller are each connected by a conveyor, the chamber is moved on the conveyor.

5. The method of claim 4,
The vacuum controller is provided with an air discharger for discharging the air inside the chamber to the outside when the chamber is mounted, the annealing controller supplies a gas to the chamber and the first heater for heating the chamber when the chamber is mounted The first gas supply and the first gas discharger for discharging the gas in the chamber to the outside is installed, the graphene synthesis controller is equipped with a second heater for heating the chamber and the gas when the chamber is mounted The second gas supplier for supplying and the second gas discharger for discharging the gas in the chamber to the outside is provided, and when the chamber is mounted in the cooling controller is supplied to the chamber by supplying the cooling gas to the inside of the chamber The third gas supply for cooling the graphene and the third gas discharger for discharging the gas inside the chamber to the outside Graphene synthesizer such a manner that value.

The method according to claim 6,
The cooling chamber is a graphene synthesizing apparatus, characterized in that for cooling the graphene by attaching a cooling plate to the cooling chamber without the third gas supply and the third gas discharger.

The method of claim 1,
Graphene comprising a vacuum chamber for vacuuming the catalyst metal, an annealing chamber for annealing the catalyst metal, a graphene synthesis chamber for synthesizing graphene to the catalyst metal, and a cooling chamber for cooling the graphene Synthetic device.

9. The method of claim 8,
The catalytic metal is moved between the vacuum chamber, the annealing chamber, the graphene synthesis chamber, and the cooling chamber by a roll-to-roll method.

9. The method of claim 8,
A rotating device for transferring the catalyst metal,
The rotating device discharges the catalyst metal from the vacuum chamber and introduces the catalyst metal into the annealing chamber, and discharges the catalyst metal from the annealing chamber and introduces the catalyst metal into the graphene synthesis chamber. Graphene synthesizing apparatus characterized in that the catalyst metal is discharged and introduced into the cooling chamber.

9. The method of claim 8,
The vacuum chamber, the annealing chamber, the graphene synthesis chamber and the cooling chamber is characterized in that the transfer directly to match the same process lead time.

5. The method of claim 4,
The annealing controller and the graphene synthesis controller, respectively, graphene synthesizing apparatus having a device capable of controlling the total pressure in the chamber by controlling the flow rate of gas flowing into or out of the chamber.