KR20130074810A - Light emitting device, and light emitting device package - Google Patents
Light emitting device, and light emitting device package Download PDFInfo
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- KR20130074810A KR20130074810A KR1020110136827A KR20110136827A KR20130074810A KR 20130074810 A KR20130074810 A KR 20130074810A KR 1020110136827 A KR1020110136827 A KR 1020110136827A KR 20110136827 A KR20110136827 A KR 20110136827A KR 20130074810 A KR20130074810 A KR 20130074810A
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- Prior art keywords
- layer
- light emitting
- electrode
- conductive
- semiconductor layer
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Embodiments relate to a light emitting device and a light emitting device package.
Group 3-5 nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. A group 3-5 nitride semiconductor is usually composed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1).
Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.
LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.
The embodiment provides a light emitting device including a light emitting structure, a pad, and an ohmic contact layer, and a light emitting device package having the same.
Embodiments may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A support member under the light emitting structure; A first electrode on the light emitting structure; And it provides a light emitting device comprising an ohmic contact layer on the upper surface of the first electrode and the light emitting structure.
The embodiment forms an ohmic contact layer covering the pad on the light emitting structure, so that the lower portion of the pad directly bonds with the light emitting structure to form a current blocking region under the pad.
Therefore, the current applied through the pad is dispersed through the region other than the bottom of the pad, so that the light emitting structure can proceed in the entire light emitting structure.
In the embodiment, by forming an ohmic contact layer covering the pad on the light emitting structure, peeling of the pad can be prevented during wire bonding, thereby improving reliability.
1 is a side cross-sectional view showing a light emitting device according to an embodiment.
FIG. 2 is a detailed view of the upper portion of the light emitting device of FIG. 1.
3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
14 and 15 are cross-sectional views illustrating a light emitting device according to another embodiment.
16 is a view showing a light emitting device package having a light emitting device of the embodiment.
17 illustrates a display device including the light emitting device package of FIG. 16, according to an exemplary embodiment.
18 is a diagram illustrating another example of a display device including the light emitting device package of FIG. 16, according to an exemplary embodiment.
19 is a view showing a lighting device having a light emitting device package of FIG. 16 according to an embodiment.
Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.
1 is a side cross-sectional view illustrating a light emitting device according to a first embodiment, and FIG. 2 is a top view of the light emitting device of FIG. 1.
Referring to FIG. 1, the
The
The
The first
The
A first conductive type and / or a second conductive type cladding layer may be formed on or under the
The second
The outer side of the
The
The
The
The
The
The
The
The
The
The
The
The
A
The
A
The
Meanwhile, an
The
The
The
An
The
The
The
As shown in FIG. 1, the
As described above, by converting the stack of the
Meanwhile, the insulating
The insulating
3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
Referring to FIGS. 3 and 4, the
The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.
The
A first
The first
An
The first conductive type and / or the second conductive cladding layer may be formed on or under the
The second
The first
Referring to FIG. 4, the
Materials having a lower refractive index than the III-V compound semiconductors may be selected from metal oxides, metal nitrides, or insulating materials, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 may be selectively formed.
When the
In addition, as illustrated in FIG. 5, a
The
The
Referring to FIG. 6, a
The
A
Referring to FIG. 7, a
The
8 to 10, the
The removal method of the
Referring to FIG. 10, the
When the
The upper surface of the first
Referring to FIG. 11, an
Referring to FIG. 12, an
The
Next, as shown in FIG. 13, an insulating
The insulating
In addition, it may be manufactured as shown in FIG. 1 by dividing into individual chip units based on the boundary region of the unit chip size T1. In this case, the chip-based separation method may selectively use a cutting process, a laser, or a breaking process.
Hereinafter, a light emitting device according to another exemplary embodiment will be described with reference to FIGS. 14 and 15.
Referring to FIGS. 14 and 15, the
The
The
The same configuration as that of the
The
The
The
The
An
The
The
The
In the
The
An ohmic contact layer 194B is formed to cover the first
The ohmic contact layer 194B may have a thickness d2 on the first
In this case, the ohmic contact layer 194B may be formed of the same material as the
The
At this time, since the
16 is a view showing a light emitting device package according to the embodiment.
Referring to FIG. 16, the light emitting
The
The
The
The
The
The light emitting device of FIG. 1 or the light emitting device package of FIG. 16 according to the embodiment may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 17 and 18 and a lighting device shown in FIG. 19. Etc. may be included.
17 is an exploded perspective view of a display device according to an exemplary embodiment.
Referring to FIG. 17, the
The
The
The light emitting module 1031 is disposed on at least one side of the
The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the
The plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that an emission surface on which light is emitted is spaced apart from the
The
The
The
The
The
The
18 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.
Referring to FIG. 18, the
The
The
The
The
19 is a perspective view of a lighting apparatus according to an embodiment.
Referring to FIG. 19, the
The
The
The
In addition, the
At least one light emitting
The
The
Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (11)
A support member under the light emitting structure;
A first electrode on the light emitting structure; And
An ohmic contact layer covering an upper surface of the first electrode and the light emitting structure
.
And a current spreading layer disposed between the first electrode and the light emitting structure.
The first electrode is in ohmic contact with the ohmic contact layer.
The ohmic contact layer includes at least one of Ni, Ge, and Au.
The first electrode includes at least one of Au, Ni, and Ge.
The first electrode is formed in a multilayer, and the uppermost layer comprises Au.
The ohmic contact layer has an opening on an upper surface of the first electrode, and the opening exposes at least a portion of the first electrode.
Light emitting device in which an insulating layer is located on the side of the light emitting structure.
The insulating layer is SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 Light emitting device comprising at least one of.
The ohmic contact layer has a plurality of openings and the openings are circular or rectangular.
A current blocking layer positioned below the light emitting structure,
A conductive layer located below the current blocking layer, and
A bonding layer located between the conductive layer and the support member
.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110136827A KR20130074810A (en) | 2011-12-16 | 2011-12-16 | Light emitting device, and light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110136827A KR20130074810A (en) | 2011-12-16 | 2011-12-16 | Light emitting device, and light emitting device package |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130074810A true KR20130074810A (en) | 2013-07-05 |
Family
ID=48988800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110136827A KR20130074810A (en) | 2011-12-16 | 2011-12-16 | Light emitting device, and light emitting device package |
Country Status (1)
Country | Link |
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KR (1) | KR20130074810A (en) |
-
2011
- 2011-12-16 KR KR1020110136827A patent/KR20130074810A/en not_active Application Discontinuation
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