KR20130074810A - Light emitting device, and light emitting device package - Google Patents

Light emitting device, and light emitting device package Download PDF

Info

Publication number
KR20130074810A
KR20130074810A KR1020110136827A KR20110136827A KR20130074810A KR 20130074810 A KR20130074810 A KR 20130074810A KR 1020110136827 A KR1020110136827 A KR 1020110136827A KR 20110136827 A KR20110136827 A KR 20110136827A KR 20130074810 A KR20130074810 A KR 20130074810A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
electrode
conductive
semiconductor layer
Prior art date
Application number
KR1020110136827A
Other languages
Korean (ko)
Inventor
박범두
황선교
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110136827A priority Critical patent/KR20130074810A/en
Publication of KR20130074810A publication Critical patent/KR20130074810A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting device and a light emitting device package are provided to prevent a pad from being separated in a wire bonding process by forming an ohmic contact layer to cover the pad on a light emitting structure. CONSTITUTION: A light emitting structure (135) includes a first conductive semiconductor layer (110), an active layer (120), and a second conductive semiconductor layer (130). A support member (170) is located under the light emitting structure. A first electrode (115) is formed on the light emitting structure. An ohmic contact layer (194) covers the first electrode and the upper side of the light emitting structure. A current blocking layer (145) is formed under the second conductive semiconductor layer.

Description

LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device and a light emitting device package.

Group 3-5 nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. A group 3-5 nitride semiconductor is usually composed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.

The embodiment provides a light emitting device including a light emitting structure, a pad, and an ohmic contact layer, and a light emitting device package having the same.

Embodiments may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A support member under the light emitting structure; A first electrode on the light emitting structure; And it provides a light emitting device comprising an ohmic contact layer on the upper surface of the first electrode and the light emitting structure.

The embodiment forms an ohmic contact layer covering the pad on the light emitting structure, so that the lower portion of the pad directly bonds with the light emitting structure to form a current blocking region under the pad.

Therefore, the current applied through the pad is dispersed through the region other than the bottom of the pad, so that the light emitting structure can proceed in the entire light emitting structure.

In the embodiment, by forming an ohmic contact layer covering the pad on the light emitting structure, peeling of the pad can be prevented during wire bonding, thereby improving reliability.

1 is a side cross-sectional view showing a light emitting device according to an embodiment.
FIG. 2 is a detailed view of the upper portion of the light emitting device of FIG. 1.
3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
14 and 15 are cross-sectional views illustrating a light emitting device according to another embodiment.
16 is a view showing a light emitting device package having a light emitting device of the embodiment.
17 illustrates a display device including the light emitting device package of FIG. 16, according to an exemplary embodiment.
18 is a diagram illustrating another example of a display device including the light emitting device package of FIG. 16, according to an exemplary embodiment.
19 is a view showing a lighting device having a light emitting device package of FIG. 16 according to an embodiment.

Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a side cross-sectional view illustrating a light emitting device according to a first embodiment, and FIG. 2 is a top view of the light emitting device of FIG. 1.

Referring to FIG. 1, the light emitting device 100 includes a light emitting structure 135 having a plurality of compound semiconductor layers 110, 120, and 130, an electrode 115, a current blocking layer 145, a reflective electrode layer 152, and a barrier layer 154. ), A bonding layer 156, and a support member 170.

The light emitting device 100 may be implemented as a light emitting diode (LED) including a compound semiconductor, for example, a compound semiconductor of?-? Element, and the LED may be visible to emit light such as blue, green, or red. It may be an LED of the light band or UV LED of the ultraviolet band, but is not limited thereto.

The light emitting structure 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130.

The first conductive semiconductor layer 110 is a compound semiconductor of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. A semiconductor layer having a compositional formula of the first conductive semiconductor layer 110 is In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may include. The first conductive semiconductor layer 110 is an N-type semiconductor layer, and the first conductive dopant includes an N-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto. The top surface of the first conductive semiconductor layer 110 may have a roughness or pattern such as a light extraction structure for light extraction efficiency, and a transparent electrode layer may be selectively formed for current diffusion and light extraction. It does not limit to this.

The active layer 120 is formed under the first conductive semiconductor layer 110 and includes at least one of a single quantum well structure, a multi-quantum well structure, a quantum-wire structure, or a quantum dot structure. It can be formed of either. The active layer 120 may be formed using a compound semiconductor material of?-? Element, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, or It may be formed in a cycle of the InGaN well layer / InGaN barrier layer. The barrier layer may be formed of a material having a band gap wider than that of the well layer.

A first conductive type and / or a second conductive type cladding layer may be formed on or under the active layer 120, and the first and second conductive cladding layers may be formed of an AlGaN-based semiconductor. . The band gap of the conductive clad layer may be wider than the band gap of the barrier layer of the active layer 120.

The second conductive semiconductor layer 130 is formed under the active layer 120, and is a compound semiconductor of a Group III-V group element doped with a second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. A semiconductor layer having a compositional formula of the second conductive type semiconductor layer 130 may be In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may include. The second conductive semiconductor layer 130 is a P-type semiconductor layer, and the second conductive dopant includes a P-type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The outer side of the light emitting structure 135 may be formed to be inclined or vertical. Here, the width of the upper surface of the light emitting structure 135 may be formed wider than the width of the lower surface, this width difference may form a side surface of the light emitting structure 135 in an inclined structure.

The light emitting structure 135 may further include a third conductive semiconductor layer under the second conductive semiconductor layer 130, and the third conductive semiconductor layer may be opposite to the second conductive semiconductor layer. It can have polarity. In addition, the first conductive semiconductor layer 110 may be a P-type semiconductor layer, and the second conductive semiconductor layer 130 may be implemented as an N-type semiconductor layer. Accordingly, the light emitting structure 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure. Hereinafter, for convenience of description, the lower layer of the light emitting structure 135 will be described as an example in which a second conductive semiconductor layer is disposed.

The current blocking layer 145 is disposed under the second conductive semiconductor layer 130.

The current blocking layer 145 is disposed between the conductive layer 148 and the second conductive semiconductor layer 130 under the second conductive semiconductor layer 130.

The current blocking layer 145 is formed of a material having a lower electrical conductivity than the conductive layer 148, and blocks the current to be supplied to the other region.

The current blocking layer 145 may be formed in a plurality of pieces separated in the thickness direction of the light emitting structure 135.

The conductive layer 148 contacts the bottom surface of the light emitting structure 135, for example, the bottom surface of the second conductive semiconductor layer 130. The conductive layer 148 may be disposed between the current blocking layer 145 and may be in ohmic contact with a bottom surface of the second conductive semiconductor layer 130. The conductive layer 148 may be further formed below the current blocking layer 145, but is not limited thereto.

The conductive layer 148 may be formed to a thickness of 20 to 50 nm, and the material may include a conductive oxide and a conductive nitride, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or IZO nitride (IZON). , Indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium (GZO) zinc oxide).

The reflective electrode layer 152 is formed under the conductive layer 148, and the reflective electrode layer 152 may be formed on the entire lower surface or a portion of the lower surface of the conductive layer 148.

The reflective electrode layer 152 is electrically connected to the conductive layer 148 and supplies power. The width of the reflective electrode layer 152 may be formed to be at least larger than the width of the light emitting structure 135, in this case it can effectively reflect the incident light. Accordingly, the light extraction efficiency can be improved.

The reflective electrode layer 152 is formed not to be exposed to the side surface of the light emitting device, which can prevent damage in the channel region of the light emitting structure 135 by the material of the reflective electrode layer 152.

The reflective electrode layer 152 may be formed in a single layer or multiple layers by selectively using a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. Can be. The reflective electrode layer 152 may be formed in multiple layers using the above materials and materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like can be laminated. The thickness of the reflective electrode layer 152 may be formed to a thickness of 150 ~ 300nm, but is not limited thereto.

The barrier layer 154 may be formed under the reflective electrode layer 152 and may contact the conductive layer 148 disposed under the channel layer 142, but is not limited thereto. The barrier layer 154 is a barrier metal, and may include, for example, at least one of Ti, W, Pt, Pd, Rh, and Ir. The barrier layer 154 may affect the reflective electrode layer 152 from the bonding layer 156. It blocks you from giving. The barrier layer 154 may have a thickness of 300 to 500 nm, but is not limited thereto.

A bonding layer 156 is formed below the barrier layer 154, and the bonding layer 156 bonds the support member 170 to the barrier layer 154.

The bonding layer 156 may include at least one of a bonding metal, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. The bonding layer 156 serves as a bonding layer, for example, and a support member 170 is bonded thereunder. The support member 170 may be attached to the support member 170 under the reflective electrode layer 152 by plating or a conductive sheet without forming the bonding layer 156 and the barrier layer 154. The thickness of the bonding layer 156 may be formed of 5 ~ 9㎛, but is not limited thereto.

A support member 170 is formed below the bonding layer 156, and the support member 170 is a conductive substrate, and includes copper (Cu), gold (Au), nickel (Ni), and molybdenum (Mo). , Copper-tungsten (Cu-W) and the like. In addition, the support member 170 may be implemented as a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga 2 O 3 , GaN, etc.). In addition, the support member 170 may not be formed or implemented as a conductive sheet. The support member 170 may be formed to 50 ~ 300㎛, it is not limited thereto.

The conductive layer 148, the reflective electrode layer 152, the barrier layer 154, and the bonding layer 156 may be defined as the conductive member 160 or the electrode member.

Meanwhile, an electrode 115 is formed on an upper surface of the light emitting structure 135.

The electrode 115 may be formed on the first conductive semiconductor layer 110. The electrode 115 may be a pad or may include a branched electrode pattern connected to the pad, but is not limited thereto. Roughness in the form of irregularities may be formed on an upper surface of the electrode 115, but is not limited thereto. The lower surface of the electrode 115 may be formed in a concave-convex shape by the light extraction structure, but is not limited thereto.

The electrode 115 is formed on the upper surface of the first conductive semiconductor layer 110, for example, Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Cu and Au Any one or a plurality of materials may be mixed to form a single layer or multiple layers. When the electrode is formed in multiple layers, an alloy containing Au may be formed on the uppermost surface thereof so as to function as a pad, 2 to 3 μm.

The electrode 115 may be selected from the above materials in consideration of ohmic contact with the first conductive semiconductor layer 110, adhesion between the metal layers, reflective properties, and conductive properties. The pad of the electrode 115 may be formed in a single or plural, but is not limited thereto.

An ohmic contact layer 194 is formed on the first conductive semiconductor layer 110 to cover the electrode 115.

The ohmic contact layer 194 is a layer in ohmic contact with the first conductivity-type semiconductor layer 110, and may be formed as a single layer or a multilayer by mixing any one or a plurality of materials of Ni, Ge, and Au. .

The ohmic contact layer 194 is formed to cover the electrode 115 to receive an electric current applied to the pad by ohmic contact with the pad and to be dispersed in the entire surface of the light emitting structure 135.

The ohmic contact layer 194 may be formed to have a circle or a quadrangle as shown in FIG. 2, but is not limited thereto.

As shown in FIG. 1, the electrode 115 is formed directly on the first conductive semiconductor layer 110, and the ohmic contact layer 194 is formed to cover the electrode 115 and the first conductive semiconductor layer 110. A current spreading layer is formed between the electrode 115 and the first conductivity type semiconductor layer 110 so that current is not transmitted to the light emitting structure 135 through the lower portion of the electrode 115. Accordingly, the front surface of the first conductivity-type semiconductor layer 110 is formed through the ohmic contact layer 194 on the electrode 115 while preventing current from being concentrated under the electrode 115 to limit the emission region. As the current flows, the light emitting area can be secured.

As described above, by converting the stack of the ohmic contact layer 194 and the electrode 115, the effect of the current block can be obtained without forming a separate current block layer, which is economical.

Meanwhile, the insulating layer 190 covering the entire light emitting structure 135 is formed.

The insulating layer 190 is SiO 2 , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 ≪ / RTI >

3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIGS. 3 and 4, the substrate 101 is loaded onto growth equipment, and a compound semiconductor of group 2 to 6 elements may be formed in a layer or pattern form thereon.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The substrate 101 may be selected from an insulating, transmissive, or conductive material as a substrate, for example, sapphire substrate (Al 2 0 3 ), GaN, SiC, ZnO, Si, GaP, InP, Ga 2 0 3 , conductive Substrate, and GaAs. An uneven structure may be formed on the upper surface of the substrate 101. In addition, between the substrate 101 and the light emitting structure 135, a layer or a pattern using a compound semiconductor of Group 2 to Group 6 elements is, for example, a ZnO layer (not shown), a buffer layer (not shown), an undoped semiconductor layer (not shown). At least one layer may be formed. The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of group III-V group elements, and the buffer layer may reduce the difference in lattice constant between the substrate and the compound semiconductor, and the undoped semiconductor layer may be It may be formed of a nitride-based semiconductor that is not doped. The undoped semiconductor layer may have lower conductivity than the first conductive semiconductor layer 110 and may improve crystallinity of the first conductive semiconductor layer 110.

A first conductive semiconductor layer 110 is formed on the substrate 101, an active layer 120 is formed on the first conductive semiconductor layer 110, and a second conductive semiconductor layer is formed on the active layer 120. 130 is formed.

The first conductive semiconductor layer 110 is a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP , AlGaInP and the like. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

An active layer 120 is formed on the first conductive semiconductor layer 110, and the active layer 120 may be formed as a single quantum well structure or a multi quantum well structure. The active layer 120 may be formed using a compound semiconductor material of Group 3-5 elements, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, InGaN well layer / InGaN barrier layer may be formed in a cycle, and the like, but is not limited thereto. The band gap of the barrier layer may be higher than the band gap of the well layer.

The first conductive type and / or the second conductive cladding layer may be formed on or under the active layer 120, and the first and second conductive cladding layers may be formed of a nitride based semiconductor. . The first and second conductive clad layers may be formed of a material having a band gap higher than that of the barrier layer.

The second conductive semiconductor layer 130 is formed on the active layer 120, and the second conductive semiconductor layer 130 is a compound semiconductor of a Group 3-5 element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure 135. In addition, a third conductive semiconductor layer, for example, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be further formed on the second conductive semiconductor layer 130. Accordingly, the light emitting structure 135 may have at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

Referring to FIG. 4, the channel layer 142 is formed in the boundary region of the unit chip size T1. The channel layer 142 may have a ring shape, a loop shape, a frame shape, or the like along a boundary area of the chip size T1, and may be formed in a continuous pattern shape or a discontinuous pattern shape. The channel layer 142 may be formed after protecting the protective region with a mask layer, or may remove the region to be etched after forming the channel layer 142. The channel layer 142 may be formed by a sputtering or deposition method, but is not limited thereto.

Materials having a lower refractive index than the III-V compound semiconductors may be selected from metal oxides, metal nitrides, or insulating materials, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 may be selectively formed.

When the channel layer 142 is omitted, the process of FIG. 4 may be omitted.

In addition, as illustrated in FIG. 5, a current blocking layer 145 in contact with an upper surface of the second conductive semiconductor layer 130 is formed in an inner region of the channel layer 142. The current blocking layer 145 may be formed by protecting the protective region with a mask layer or by selectively removing the current blocking layer 145. The current blocking layer 145 may be formed using a sputtering method, a deposition method, or a printing method, but is not limited thereto.

The conductive layer 148 is formed on the upper surface of the light emitting structure 135, for example, the upper surface of the second conductive semiconductor layer 130. The conductive layer 148 may be formed by a sputtering or deposition method, and is in ohmic contact with an upper surface of the second conductive semiconductor layer 130.

The conductive layer 148 may be formed on the second conductive semiconductor layer 130, the channel layer 142, and the current blocking layer 145. The conductive layer 148 may be formed on a portion of the upper surface of the channel layer 142 or may not be formed on the upper surface, but is not limited thereto. The conductive layer 148 includes any one of a transparent conductive oxide and a conductive nitride, but is not limited thereto.

Referring to FIG. 6, a reflective electrode layer 152 is formed on the conductive layer 148, and a barrier layer 154 is formed on the reflective electrode layer 152. The reflective electrode layer 152 may be deposited by E-beam (electron beam), sputtering, or plating. The reflective electrode layer 152 is formed of a material having a reflective property of 70% or more, such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a material composed of an optional alloy thereof. It may be formed in a single layer or multiple layers. In addition, the reflective electrode layer 152 may be formed in a multilayer using the metal material and conductive oxide materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, IZO / Ni, AZO / Ag , IZO / Ag / Ni, AZO / Ag / Ni and the like.

The reflective electrode layer 152 may be formed up to the channel layer 142. Since the reflective electrode layer 152 is implemented using a reflective metal, the reflective electrode layer 152 may serve as an electrode.

A barrier layer 154 is formed on the reflective electrode layer 152, and the barrier layer 154 may be formed by a sputtering or deposition method. The barrier layer 154 may include at least one of Ti, W, Pt, Pd, Rh, and Ir as a barrier metal. The barrier layer 154 may also be in contact with the top surface of the conductive layer 148, but is not limited thereto.

Referring to FIG. 7, a bonding layer 156 is formed on the barrier layer 154. The bonding layer 156 may be formed by a sputtering or deposition method, and the material may be a metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. It may include, but is not limited thereto.

The bonding layer 156 is a bonding layer, and the support member 170 may be bonded thereon. The support member 170 is a conductive support member, and includes copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga 2 O 3 , GaN, etc.) may be implemented. The support member 170 may be bonded to the bonding layer 156, formed as a plating layer, or attached in the form of a conductive sheet. In an embodiment, the bonding layer 156 and the barrier layer 154 may not be formed. In this case, the conductive support member 170 may be formed on the reflective electrode layer 152.

8 to 10, the support member 170 is positioned at the base, and the substrate 101 is positioned at the uppermost side. Thereafter, the substrate 101 disposed on the light emitting structure 135 is removed.

The removal method of the substrate 101 may be removed by a laser lift off (LLO) process. The laser lift-off method is a method of irradiating and separating a laser having a wavelength of a predetermined region to the substrate 101. Here, when there is another semiconductor layer (eg, buffer layer) or an air gap between the substrate 101 and the first conductive semiconductor layer 110, the substrate may be separated using a wet etching solution. It does not limit about a removal method.

Referring to FIG. 10, the channel region 105, which is the boundary region of the chip size T1, is removed by isolation etching. That is, a portion of the channel layer 142 may be exposed by isolating the chip and the chip boundary region, and the side surface of the light emitting structure 135 may be inclined or vertically formed.

When the channel layer 142 is a light-transmissive material, the laser irradiated in the isolation etching or laser scribing process is transmitted to thereby transmit a metal material below the barrier layer 154, the bonding layer 156, and the supporting member. It is possible to suppress the material of 170 from protruding in the direction in which the laser is irradiated or generating debris.

The upper surface of the first conductive semiconductor layer 110 is etched to form a light extracting structure 112, and the light extracting structure 112 is formed in a roughness or uneven pattern to extract light. Can improve.

Referring to FIG. 11, an electrode 115 is formed on the first conductive semiconductor layer 110. The electrode 115 may be formed by a deposition method, a sputtering method or a plating method, but is not limited thereto. The number of the electrodes 115 may be formed in one or more, and the positions thereof may be overlapped in the thickness direction of the region of the current blocking layer 145 and the light emitting structure 135. The electrode 115 may include a branched pattern and a pad having a predetermined shape. The formation process of the electrode 115 may be performed before or after chip separation, but is not limited thereto.

Referring to FIG. 12, an ohmic contact layer 194 is formed on the top surface of the light emitting structure 135 to cover the electrode 115.

The ohmic contact layer 194 is in ohmic contact with the first conductivity-type semiconductor layer 110 and is formed of a material in ohmic contact with the electrode 115.

Next, as shown in FIG. 13, an insulating layer 190 is formed around the light emitting structure 135. The insulating layer 190 is formed around the chip, and may extend to an upper surface of the first conductive semiconductor layer 110. The insulating layer 190 may be formed around the light emitting structure 135 to prevent a short between the layers 110, 120, and 130 of the light emitting structure 135. In addition, the insulating layer 190 may prevent moisture from penetrating into the chip.

The insulating layer 190 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2, or the like.

In addition, it may be manufactured as shown in FIG. 1 by dividing into individual chip units based on the boundary region of the unit chip size T1. In this case, the chip-based separation method may selectively use a cutting process, a laser, or a breaking process.

Hereinafter, a light emitting device according to another exemplary embodiment will be described with reference to FIGS. 14 and 15.

Referring to FIGS. 14 and 15, the light emitting devices 100A and 100B may include a light emitting structure 135 having a plurality of compound semiconductor layers 110, 120, and 130, an electrode 115, a current blocking layer 145, and a reflective electrode layer 152. , The barrier layer 154, the bonding layer 156, and the support member 170.

The light emitting devices 100A and 100B may be implemented as a light emitting diode (LED) including a compound semiconductor, for example, a compound semiconductor of?-? Group elements, and the LED emits light such as blue, green, or red. It may be an LED in the visible light band or a UV LED in the ultraviolet band, but is not limited thereto.

The light emitting structure 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130.

The same configuration as that of the light emitting device 100 of FIG. 1 is omitted.

The light emitting device 100A of FIG. 14 includes an electrode 115 on an upper surface of the light emitting structure 135.

The electrode 115 may be formed on the first conductive semiconductor layer 110. The electrode 115 may be a pad or may include a branched electrode pattern connected to the pad, but is not limited thereto. Roughness in the form of irregularities may be formed on an upper surface of the electrode 115, but is not limited thereto. The lower surface of the electrode 115 may be formed in a concave-convex shape by the light extraction structure, but is not limited thereto.

The electrode 115 is formed on the upper surface of the first conductivity-type semiconductor layer 110, for example, Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Cu and Au Any one or a plurality of materials may be mixed to form a single layer or multiple layers. When the electrode is formed in multiple layers, an alloy containing Au may be formed on the uppermost surface thereof so as to function as a pad, 2 to 3 μm.

The electrode 115 may be selected from the above materials in consideration of ohmic contact with the first conductive semiconductor layer 110, adhesion between the metal layers, reflective properties, and conductive properties. The pad of the electrode 115 may be formed in a single or plural, but is not limited thereto.

An ohmic contact layer 194A is formed on the first conductive semiconductor layer 190 to cover a portion of the side surface and the upper surface of the electrode 115.

The ohmic contact layer 194A is formed while opening the central region d1 of the upper surface of the electrode 115 where wire bonding is performed.

The ohmic contact layer 194A may be in ohmic contact with the first conductivity-type semiconductor layer 190, and may be formed as a single layer or a multilayer by mixing any one or a plurality of materials of Ni, Ge, and Au. .

The ohmic contact layer 194A is formed to cover the electrode 115 and receives an electric current applied to the pad by ohmic contact with the electrode 115 to be dispersed in the entire surface of the light emitting structure 135.

In the light emitting device 100B of FIG. 15, a current blocking layer 195 is formed on the first conductivity type semiconductor layer 190.

The current blocking layer 195 may be formed of a material such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , and may be formed to define an area where a pad is formed. .

An ohmic contact layer 194B is formed to cover the first conductive semiconductor layer 190 and the current blocking layer 195.

The ohmic contact layer 194B may have a thickness d2 on the first conductive semiconductor layer 190 and a thickness d3 on the current blocking layer 195, and may be different from each other. The thickness d3 may be greater than the thickness d2 on the first conductivity-type semiconductor layer 190.

In this case, the ohmic contact layer 194B may be formed of the same material as the ohmic contact layer 194A of the light emitting device 100A of FIG. 14, but may include an alloy layer including Au thereon.

The ohmic contact layer 194 over the current blocking layer is formed by forming an alloy layer including the Au on the top and forming an ohmic contact layer 194 on the current blocking layer 195 to satisfy a predetermined thickness. Can function as

At this time, since the current blocking layer 195 is formed under the ohmic contact layer 194 serving as the pad, the current does not flow to the lower portion of the pad, but is dispersed to a neighboring area so that the current flows, as shown in FIGS. 1 and 14. The area is expanded.

16 is a view showing a light emitting device package according to the embodiment.

Referring to FIG. 16, the light emitting device package 30 according to the embodiment includes a body 31, a first lead electrode 32 and a second lead electrode 33 installed on the body 31, and the body ( The light emitting device 100 according to the exemplary embodiment installed in the 31 and electrically connected to the first lead electrode 32 and the second lead electrode 33, and the molding member 37 surrounding the light emitting device 100. ).

The body 31 may include a silicon material, a synthetic resin material, or a metal material, and a cavity having an inclined surface may be formed around the light emitting device 100.

The first lead electrode 32 and the second lead electrode layer 33 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 32 and the second lead electrode 33 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be installed on the body 31 or on the first lead electrode 32 or the second lead electrode 33.

The light emitting device 100 may be mounted on the first lead electrode 32 and connected to the second lead electrode 33 by a wire 36. As another example, the light emitting device 100 may be flipped or die bonded. It may be electrically connected.

The molding member 37 may surround and protect the light emitting device 100. In addition, the molding member 37 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

The light emitting device of FIG. 1 or the light emitting device package of FIG. 16 according to the embodiment may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 17 and 18 and a lighting device shown in FIG. 19. Etc. may be included.

17 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 17, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device package 30 may be arranged on the substrate 1033 at predetermined intervals. have. The substrate may be a printed circuit board, but is not limited thereto. In addition, the substrate 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 30 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that an emission surface on which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 30 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

18 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

Referring to FIG. 18, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 30 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

19 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 19, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 30 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Reference Signs List 100 light emitting element, 110 first conductive semiconductor layer, 120 active layer, 130 second conductive semiconductor layer, 115 electrode, 145 current blocking layer, 148 conductive layer, 152 reflective electrode layer, 154 barrier Layer, 156: bonding layer, 170: support member, 194 ohmic contact layer, 190: insulating layer

Claims (11)

A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A support member under the light emitting structure;
A first electrode on the light emitting structure; And
An ohmic contact layer covering an upper surface of the first electrode and the light emitting structure
. The method of claim 1,
And a current spreading layer disposed between the first electrode and the light emitting structure. The method of claim 2,
The first electrode is in ohmic contact with the ohmic contact layer. The method of claim 3,
The ohmic contact layer includes at least one of Ni, Ge, and Au. 5. The method of claim 4,
The first electrode includes at least one of Au, Ni, and Ge. The method of claim 5,
The first electrode is formed in a multilayer, and the uppermost layer comprises Au. The method according to claim 6,
The ohmic contact layer has an opening on an upper surface of the first electrode, and the opening exposes at least a portion of the first electrode. The method of claim 1,
Light emitting device in which an insulating layer is located on the side of the light emitting structure. 9. The method of claim 8,
The insulating layer is SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 Light emitting device comprising at least one of. The method of claim 1,
The ohmic contact layer has a plurality of openings and the openings are circular or rectangular. The method of claim 1,
A current blocking layer positioned below the light emitting structure,
A conductive layer located below the current blocking layer, and
A bonding layer located between the conductive layer and the support member
.
KR1020110136827A 2011-12-16 2011-12-16 Light emitting device, and light emitting device package KR20130074810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110136827A KR20130074810A (en) 2011-12-16 2011-12-16 Light emitting device, and light emitting device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110136827A KR20130074810A (en) 2011-12-16 2011-12-16 Light emitting device, and light emitting device package

Publications (1)

Publication Number Publication Date
KR20130074810A true KR20130074810A (en) 2013-07-05

Family

ID=48988800

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110136827A KR20130074810A (en) 2011-12-16 2011-12-16 Light emitting device, and light emitting device package

Country Status (1)

Country Link
KR (1) KR20130074810A (en)

Similar Documents

Publication Publication Date Title
KR101039879B1 (en) Light emitting device and fabrication method thereof
US9006776B2 (en) Light emitting device and light emitting device package having the same
KR101072193B1 (en) Light emitting device, fabrication method thereof, and light emitting device package
US8674389B2 (en) Light emitting device and light emitting device package having the same
KR20130021300A (en) Light emitting device, light emitting device package, and light unit
KR101865918B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR20130027275A (en) Light emitting device, light emitting device package, and light unit
KR20130021296A (en) Light emitting device, light emitting device package, and light unit
KR101795044B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR20130014255A (en) Light emitting device, method for fabricating the same and lighting system
KR20130009040A (en) Light emitting device, method of fabricating light emitting device, light emitting device package, and light unit
KR101916124B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR20130065327A (en) Light emitting device, light emitting device package, and light unit
KR20130045686A (en) Light emitting device, light emitting device package, and light unit
KR101836373B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR20130031674A (en) Light emitting device, light emitting device package, light unit, and method for fabricating light emitting device
KR101865923B1 (en) Light emitting device, light emitting device package, and light unit
KR20130038061A (en) Light emitting device, method of fabricating light emitting device, light emitting device package, and light unit
KR20120045635A (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
KR20120042516A (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
KR101896676B1 (en) Light emitting device, and light emitting device package
KR101855745B1 (en) Light emitting device, method for fabricating the same, and lighting system
KR20130074810A (en) Light emitting device, and light emitting device package
KR101926479B1 (en) Light emitting device, light emitting device package, and light unit
KR101786073B1 (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application