KR20130070037A - Canister for producing semiconductor - Google Patents

Canister for producing semiconductor Download PDF

Info

Publication number
KR20130070037A
KR20130070037A KR1020110137154A KR20110137154A KR20130070037A KR 20130070037 A KR20130070037 A KR 20130070037A KR 1020110137154 A KR1020110137154 A KR 1020110137154A KR 20110137154 A KR20110137154 A KR 20110137154A KR 20130070037 A KR20130070037 A KR 20130070037A
Authority
KR
South Korea
Prior art keywords
container
liquid source
supply
inner space
discharge
Prior art date
Application number
KR1020110137154A
Other languages
Korean (ko)
Inventor
박주영
나현규
Original Assignee
(주)아인스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아인스 filed Critical (주)아인스
Priority to KR1020110137154A priority Critical patent/KR20130070037A/en
Publication of KR20130070037A publication Critical patent/KR20130070037A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

The present invention relates to a canister for semiconductor manufacturing which can supply a vaporizer with a uniform density of a liquid source that is a raw material of a process gas used in a semiconductor manufacturing process. A supply unit for supplying a liquid source to the vessel, an inner space of the vessel, an agitator for generating a flow in a liquid source stored in the inner space of the vessel to maintain a uniform density, and a pressure for adjusting the internal pressure of the vessel. And an adjusting unit and an outlet for discharging the liquid source stored in the inner space of the container to the outside.
As described above, by stirring the liquid source contained in the inner space of the container to maintain a uniform density and supplying it to the vaporizer, the amount of gas generated in the vaporizer can be kept constant. That is, since the source gas can be constantly supplied to the reaction chamber, it is possible to prevent the quality of the thin film from being lowered unlike in the prior art.

Description

Canister for semiconductor manufacturing

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a canister for semiconductor manufacturing, and more particularly, to a canister for semiconductor manufacturing in which a liquid source serving as a raw material of a thin film deposited on a wafer is accommodated.

      In general, in order to manufacture a semiconductor device or a flat panel display, a process of depositing a predetermined thin film on a substrate such as a silicon wafer or glass is required. Simultaneously, two or more kinds of source materials combined according to the type of thin film to be deposited are simultaneously used. Alternatively, by sequentially feeding into the reaction chamber of the thin film deposition apparatus, it is possible to form a thin film of a desired thickness on the substrate.

Since the source material, which is a raw material of the thin film deposited on the substrate, is mostly liquid or solid at room temperature, it is necessary to vaporize the source material with the source gas before supplying the source material into the reaction chamber. Accordingly, a conventional thin film deposition apparatus is provided with a canister in which a liquid source, which is a raw material, is accommodated to generate a source gas supplied into the reaction chamber.

1 shows an example of a conventional semiconductor manufacturing canister, and as shown, the semiconductor manufacturing canister 10 includes a container 11 having an internal space in which a liquid source 1 for semiconductor production is provided, and the container. Carrier gas supply port 21 for injecting the carrier gas (2) for gasifying the liquid source (1) into the inner space of (11), and source gas (3) formed in the inner space of the container (11) And a source gas exhaust port 31 for discharging the gas to the outside.

Through the carrier gas supply line 23 and the carrier gas supply port 21, the carrier gas 2, for example, an inert gas such as nitrogen (N2) gas and helium (He) gas, argon (Ar) gas, is supplied to the container 11. When injected into the container, the liquid source 1 contained in the container 11 is bubbling by the carrier gas 2 and then converted into a gaseous source gas 3. The source gas 3 is supplied into the reaction chamber (not shown) through the source gas exhaust port 31 and the source gas exhaust line 33.

However, in the process of bubbling the liquid source 1, some liquid source 1a in a bubble state penetrates into the source gas exhaust port 31, and the penetrated liquid source is transferred to the reaction chamber by a gas line. There is a problem in that the quality of the deposited thin film is greatly reduced by spraying onto the substrate in a liquid state.

In addition, a part of the liquid source penetrating into the source gas exhaust port 31 remains in a powder form on the inner wall of the source gas exhaust line 33. As such, the source material in powder form not only reduces the amount of vaporization in the container, but also causes a problem of particles being transferred into the reaction chamber.

In order to solve the above problems, a separate vaporizer is installed between the canister and the reaction chamber, and a system configured to supply a liquid source stored in the canister to the vaporizer, vaporize the source gas, and supply the gas into the reaction chamber is developed. It is becoming.

However, in such a conventional system, a liquid source that is a raw material is supplied to the vaporizer in which the source gas is generated at a uniform density. If the density of the supplied liquid source is uneven, the amount of gas vaporized in the vaporizer is not constant. I can't. That is, there is a concern that the quality of the thin film may be degraded as the source gas is not constantly supplied to the reaction chamber.

The present invention has been made to solve the conventional problems as described above, the object is to provide a canister for manufacturing a semiconductor that can supply a liquid source to the vaporizer in a uniform density.

According to an aspect of the present invention, a flow is generated in a container having an internal space accommodating a liquid source for semiconductor manufacturing, a supply unit for supplying a liquid source to the internal space of the container, and a liquid source stored in the internal space of the container. A canister for semiconductor manufacturing is provided that includes a stirring portion for maintaining a uniform density, a pressure adjusting portion for adjusting an internal pressure of the vessel, and a discharge portion for discharging a liquid source stored in an inner space of the vessel to the outside.

In this case, the supply unit includes a supply line receiving a liquid source from the outside, a supply port connected to the supply line on one side and drawn into the container, and a supply valve to open or close the supply port or supply line. can do.

The discharge unit may include a discharge port having one side introduced into the container to discharge the liquid source to the outside, a discharge line connected to the discharge port to supply the liquid source to the outside, and the discharge port or the discharge line. It may include a discharge valve for opening and closing.

Here, the stirring unit, a rotary shaft one side is drawn into the inner space of the vessel and the other side is drawn out of the vessel, one or more stirring blades formed on one side of the rotary shaft, the outer shaft is installed on the outer shaft It can be configured to include a motor for driving the.

In addition, the container is provided with a through hole into which the rotating shaft is inserted, and the through hole may include a sealing member for sealing the inside of the container to prevent leakage of gas or liquid in the container.

As described above, the present invention has the effect of maintaining a constant amount of gas generated in the vaporizer by supplying it to the vaporizer while maintaining a uniform density by stirring the liquid source contained in the inner space of the container.

That is, since the source gas can be constantly supplied to the reaction chamber, it is possible to prevent the quality of the thin film from being lowered unlike in the prior art.

1 is a cross-sectional view showing an example of a conventional canister for semiconductor manufacturing.
Figure 2 is a cross-sectional view showing an embodiment of a canister for semiconductor manufacturing according to the present invention.
3 shows a flow chart of an embodiment of the operating process according to FIG. 2;

       BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

       Hereinafter, preferred embodiments of the seed germination device according to the present invention will be described in detail with reference to the accompanying drawings, and it is determined that the detailed description of the known art related to the present invention may obscure the gist of the present invention. In that case, the detailed description is omitted.

2 is a cross-sectional view showing an embodiment of a canister for semiconductor manufacturing according to the present invention, Figure 3 is a flow chart showing an embodiment of the operating process according to FIG.

As shown, the canister according to the present embodiment has a container 100 having an internal space in which the liquid source S is accommodated, and a supply unit for supplying the liquid source S to the internal space of the container 100. Include.

The supply unit is a device for injecting the liquid source (S) supplied from a separate liquid source reservoir (not shown) into the container 100 of the canister, in this embodiment, the supply of the liquid source (S) supplied from the outside A line 200, a supply port 220 connected to the supply line 200 on one side and drawn into the container 100, and between the supply line 200 and the supply port 220. It consists of a supply valve 210 is installed. That is, by opening and closing the supply valve 210 to control the supply of the liquid source (S) to the interior of the container (100).

In addition, there is provided a stirring section for maintaining a uniform density by generating a flow in the liquid-phase source (S) stored in the inner space of the container 100 through the supply, one side of the container 100 Rotating shaft 410 drawn into the inner space and the other side is drawn out, stirring blades 420 provided on one side outer circumferential surface of the rotating shaft 410 at regular intervals, and installed on the outside of the container 100 and the rotating shaft It consists of a motor 400 for driving 410.

Accordingly, when power is applied to the motor 400, the rotating shaft 410 rotates at a predetermined speed and direction, and a plurality of stirring blades 420 provided on the rotating shaft 410 are inside the liquid source S. By stirring at a constant speed it is possible to maintain a constant density of the liquid source (S).

On the other hand, there is provided with a discharge portion for discharging the liquid source (S) stored in the inner space of the container to the outside, the discharge portion according to the present embodiment is one side is introduced into the interior of the container 100 is the liquid source (S) The discharge port 320 for discharging to the outside, the discharge line 300 is connected to the discharge port 320 to supply the liquid source (S) to the outside, the discharge line 300 and the discharge port 320 It consists of a discharge valve 310 is installed between.

The discharge line 300 is provided with a vaporizer (not shown) for receiving a liquid source to generate a source gas, by controlling the liquid source supply to the vaporizer by opening and closing the discharge valve (310).

In addition, there is provided a pressure adjusting unit (not shown) for adjusting the internal pressure of the container 100, which will be described in detail in FIG. In addition, the container 100 has a through hole into which the rotation shaft 410 is inserted, and the through hole is provided with a sealing member 500 for sealing the inside of the container 100 to prevent leakage of gas or liquid.

In the present embodiment as the sealing member 500, a magnetic seal was used, and the magnetic seal is a component mainly used for sealing around a rotating shaft, so that gas, steam, and mist can be completely blocked, so that the inside of the container The degree of vacuum can be maintained.

Referring to the operation process of the canister according to Figure 2 as follows. As shown in FIG. 3, when the supply valve 210 is opened, the liquid source S supplied along the supply line 200 is injected into the container 100 through the supply port 220, and the liquid phase is supplied. When the source (S) is injected to a predetermined condition, the motor 400 rotates the stirring blade 420 to perform the liquid phase stirring operation.

When the storage amount of the liquid source (S) reaches a threshold value, the supply valve 210 cuts off the supply in the container 100 of the liquid source (S), wherein the liquid source agitating operation shuts off the supply valve 210. You can continue afterwards.

While maintaining the density of the liquid source (S) uniformly through the stirring operation, by adjusting the pressure in the container 100 using the above-described pressure adjusting unit (not shown) to smoothly discharge the liquid source (S) To be done.

Thereafter, the discharge valve 310 is opened to discharge the liquid source S maintained at a uniform density inside the container 100 to the outside, and the discharged liquid source passes through the discharge line 300 to the vaporizer (not shown). Is supplied. The liquid phase source supplied to the vaporizer generates a source gas through a vaporization process, and the generated source gas is supplied to a reaction chamber (not shown) to be used in a semiconductor manufacturing process.

That is, as the liquid source (S) is supplied to the vaporizer in a state of maintaining a uniform density, the amount of source gas generated per unit time in the vaporizer is kept constant, which keeps the amount of source gas supplied to the reaction chamber constant It is possible to prevent the quality of the thin film from deteriorating in advance.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It will be understood that the invention may be varied and varied without departing from the scope of the invention.

100: container 200: supply line
210: supply valve 220: supply port
300: discharge line 310: discharge valve
320: discharge port 400: motor
410: rotating shaft 420: stirring blade
500: sealing member

Claims (5)

A container having an internal space accommodating a liquid source for semiconductor manufacturing;
Supply unit for supplying a liquid source to the inner space of the container,
A stirring part for generating a uniform density by generating a flow in a liquid source stored in an inner space of the container;
A pressure adjusting unit for adjusting the internal pressure of the container;
And a discharging part for discharging the liquid source stored in the inner space of the container to the outside. The method of claim 1,
The supply unit includes a supply line receiving a liquid source from the outside, a supply port connected to the supply line on one side and drawn into the container, and a supply valve to open or close the supply port or the supply line. A canister for semiconductor manufacturing, characterized by the above-mentioned. The method of claim 1,
The discharge portion, the discharge port for one side is introduced into the inside of the container to discharge the liquid source to the outside, the discharge line connected to the discharge port to supply the liquid source to the outside, opening and closing the discharge port or discharge line A canister for semiconductor manufacturing comprising a discharge valve. 4. The method according to any one of claims 1 to 3,
The stirring unit may include a rotating shaft having one side drawn into the inner space of the container and the other side drawn out of the container, one or more stirring blades formed at one side of the rotating shaft, and installed outside the container to drive the rotating shaft. A canister for semiconductor manufacturing, comprising a motor to be used. 5. The method of claim 4,
The container has a through hole in which the rotating shaft is inserted, and the through hole is provided with a sealing member for sealing the inside of the container.
KR1020110137154A 2011-12-19 2011-12-19 Canister for producing semiconductor KR20130070037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110137154A KR20130070037A (en) 2011-12-19 2011-12-19 Canister for producing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110137154A KR20130070037A (en) 2011-12-19 2011-12-19 Canister for producing semiconductor

Publications (1)

Publication Number Publication Date
KR20130070037A true KR20130070037A (en) 2013-06-27

Family

ID=48864938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110137154A KR20130070037A (en) 2011-12-19 2011-12-19 Canister for producing semiconductor

Country Status (1)

Country Link
KR (1) KR20130070037A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200083829A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Precursor Degasser Using Centrifugal Force
KR20200083827A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Phase Precursor Degasser Including Exposed Surface Area Increasing Means
WO2020141669A1 (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid precursor degasser
KR20200083828A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Phase Precursor Including Dispersion Means
KR20210052765A (en) * 2019-10-31 2021-05-11 세메스 주식회사 Chemical solution apparatus and chemical ejeting system
KR20210062975A (en) * 2019-11-22 2021-06-01 세종대학교산학협력단 Flattening apparatus and substrate processing apparatus including the same, substrate processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200083829A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Precursor Degasser Using Centrifugal Force
KR20200083827A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Phase Precursor Degasser Including Exposed Surface Area Increasing Means
WO2020141669A1 (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid precursor degasser
KR20200083828A (en) * 2018-12-31 2020-07-09 한국표준과학연구원 Liquid Phase Precursor Including Dispersion Means
KR20210052765A (en) * 2019-10-31 2021-05-11 세메스 주식회사 Chemical solution apparatus and chemical ejeting system
KR20210062975A (en) * 2019-11-22 2021-06-01 세종대학교산학협력단 Flattening apparatus and substrate processing apparatus including the same, substrate processing method

Similar Documents

Publication Publication Date Title
KR20130070037A (en) Canister for producing semiconductor
KR101899634B1 (en) Film forming apparatus, film forming method, and recording medium
EP1038048B1 (en) Gas feeding system for chemical vapor deposition reactor and method of controlling the same
US9200364B2 (en) Film forming apparatus, film forming method, method for optimizing rotational speed, and storage medium
US9297072B2 (en) Film deposition apparatus
US20050172895A1 (en) MOCVD apparatus and MOCVD method
US11367611B2 (en) Film forming method and film forming apparatus
KR100703214B1 (en) Mocvd of planetary type
TWI613312B (en) Method for processing a substrate and substrate processing apparatus
TWI557269B (en) Film deposition method
GB2345298A (en) Liquid delivery system for chemical vapour deposition method
TW201801182A (en) Vaporization raw material supplying device and substrate processing apparatus using the same
KR20090116236A (en) Chemical vapor deposition apparatus
JPH11168092A (en) Method and equipment for vapor phase growth
US20130161287A1 (en) Substrate processing method and substrate processing apparatus
US8440018B2 (en) Apparatus for supplying source and apparatus for deposition thin film having the same
KR101854900B1 (en) Material supplying apparatus and thin film depositing system having the same
KR101741688B1 (en) Method for manufacturing thin film and apparatus for thereof
TWI424600B (en) Apparatus and method for depositing organic thin film
US11688585B2 (en) Plasma processing apparatus and plasma processing method
KR20130067725A (en) Substrate processing apparatus
KR101232908B1 (en) A chemical vapor dipositino apparatus
JP6441050B2 (en) Deposition method
KR101473403B1 (en) Shower head assembly and apparatus for chemical vapor deposition having the same
KR20110116470A (en) Shower head and apparatus for treating substrate with the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application