KR20130064456A - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
KR20130064456A
KR20130064456A KR1020110131081A KR20110131081A KR20130064456A KR 20130064456 A KR20130064456 A KR 20130064456A KR 1020110131081 A KR1020110131081 A KR 1020110131081A KR 20110131081 A KR20110131081 A KR 20110131081A KR 20130064456 A KR20130064456 A KR 20130064456A
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South Korea
Prior art keywords
electric field
substrate
electrode
thin film
emitter
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KR1020110131081A
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Korean (ko)
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KR101757874B1 (en
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최원석
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엘지전자 주식회사
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Publication of KR20130064456A publication Critical patent/KR20130064456A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: A solar cell is provided to improve the efficiency of a solar cell by minimizing the recombination of the carriers on the boundary of a rear protection unit and a substrate. CONSTITUTION: An emitter part(121) is formed on the rear surface of a substrate(110). The emitter part contains a second conductive impurity. A rear field part(122) contains a first conductive impurity. A rear protection unit(150) is formed on the rear surface of the substrate. A first electrode(141) is formed on the rear surface of the emitter part. A second electrode(142) is formed on the rear surface of the rear field part.

Description

Solar cell {SOLAR CELL}

The present invention relates to a solar cell.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells have a semiconductor portion that forms a p-n junction by different conductive types, such as p-type and n-type, and electrodes connected to semiconductor portions of different conductivity types, respectively.

When light is incident on the solar cell, a plurality of electron-hole pairs are generated in the semiconductor, and the generated electron-hole pairs are separated into electrons and holes which are charged by the incident light, and the electrons move toward the n-type semiconductor portion. The hole moves toward the p-type semiconductor portion. The moved electrons and holes are collected by respective electrodes connected to the p-type semiconductor portion and the n-type semiconductor portion, respectively, and connected with the wires to obtain electric power.

An object of the present invention is to improve the photoelectric conversion efficiency of solar cells.

One example of a solar cell according to the present invention includes a substrate containing impurities of a first conductivity type; An emitter portion formed on a rear surface of the substrate and containing impurities of a second conductivity type opposite to the first conductivity type; A rear electric field portion formed on the rear surface of the substrate and containing impurities of the same type as the first conductivity type at a higher concentration than the substrate; A rear protective part formed on an upper rear side of the substrate; A first electrode formed on a rear surface of the emitter unit; And a second electrode formed on a rear surface of the rear electric field part, wherein the first electrode is formed to at least partially overlap the rear protective part.

Here, the rear protection unit may be formed between the emitter unit and the rear electric field unit among the upper rear surface of the substrate.

In this case, the second electrode may be formed to overlap a part of the rear protection part, and the width of the area where the second electrode overlaps the rear protection part may be smaller than the width of the area where the first electrode overlaps the rear protection part.

Specifically, the width where the first electrode overlaps with the rear upper portion of the rear protector may be 50% or more and less than 100% of the width of the rear protector, or the area where the first electrode overlaps with the rear upper portion of the rear protector may include the area of the rear protector. It may be at least 50% and less than 100%.

In addition, the back surface protection part may include at least one of an intrinsic amorphous silicon layer (i-a-Si), a dielectric layer, and a thin film conductor layer having electrical conductivity.

In this case, the amorphous silicon layer may be located at the rear of the substrate, and at least one of the dielectric layer and the thin film conductor layer may be located at the rear of the amorphous silicon layer.

In this case, a thin film conductor layer and a dielectric layer may be sequentially formed on the rear surface of the amorphous silicon layer.

In addition, a portion of the thin film conductor layer may be electrically connected to the emitter portion.

Here, the dielectric layer may include at least one of SiNx, SiOx, HfO 2 and AL 2 O 3 , and the thickness of the thin film conductor layer may be smaller than the thickness of the amorphous silicon layer (a-Si) and the dielectric layer.

Here, the thin film conductor layer may include a metal thin film or metal nanoparticles.

In addition, the emitter unit and the rear electric field are in contact with each other, the rear protector may be positioned overlapping the rear portion of the rear electric field.

In this case, the rear protective part overlapping a portion of the rear surface of the rear electric field part may include an electrically conductive thin film conductor layer and a dielectric layer.

In addition, the rear protective part overlapping a portion of the rear surface of the rear electric field part may include an electrically conductive thin film conductor layer and a dielectric layer, and the thin film conductor layer may be positioned between the dielectric layers.

In addition, an anti-reflection film may be further formed on the front surface of the substrate to prevent reflection of incident light.

In the solar cell according to the present invention, since the first electrode extends to the rear upper portion of the rear protective portion to cover at least a rear portion of the rear protective portion, the efficiency of the solar cell is minimized by minimizing the carrier recombination and extinction at the interface between the rear protective portion and the substrate. Can improve.

1 is a partial perspective view of a solar cell according to a first embodiment of the present invention.
FIG. 2 is an overall sectional view of the solar cell cut along the line II-II of the solar cell shown in FIG. 1.
3 is a view for explaining the effect of the solar cell according to the present invention.
4 is a view for explaining a second embodiment of a solar cell according to the present invention.
5A and 5B are views for explaining a third embodiment of a solar cell according to the present invention.
6A and 6B are views for explaining a fourth embodiment of a solar cell according to the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. In addition, when a part is formed “overall” on another part, it means that it is not only formed on the entire surface (or front) of the other part but also on the edge part.

Next, a solar cell as an embodiment of the present invention will be described with reference to the accompanying drawings.

First, a solar cell according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a partial perspective view of a solar cell according to a first exemplary embodiment of the present invention, FIG. 2 is an overall cross-sectional view of the solar cell cut along the line II-II of the solar cell illustrated in FIG. 1, and FIG. It is a figure for demonstrating the effect of the solar cell which concerns on this invention.

Referring to FIGS. 1 and 2, one example of the solar cell 1 according to the present invention is a substrate 110, a surface of the substrate 110 that is opposite to the incident surface without being incident on light (hereinafter, referred to as 'rear'). a plurality of emitter portions 121 positioned above the substrate 110 and a plurality of back field fields 122 (BS) located on the back surface of the substrate 110 and spaced apart from the plurality of emitter portions 121. 122, a plurality of first electrodes 141 respectively positioned on the plurality of emitter portions 121, a plurality of second electrodes 142 respectively positioned on the plurality of rear electric field portions 122, and a substrate 110. And a rear protection part 150 positioned on the rear surface and positioned between the plurality of emitter parts 121 and the plurality of rear electric field parts 122, respectively.

In addition, an example of the solar cell according to the present invention may further include a front protection unit 160 and an anti-reflection unit 170 on the front surface of the incident surface of the substrate 110 as shown in FIGS. 1 and 2. have.

One example of the solar cell according to the present invention as shown in Figures 1 and 2, the first electrode 141 is formed extending from the rear of the emitter unit 121 to the upper rear of the rear protection unit 150 do. A detailed description thereof will be described later.

Although not shown, impurities of the same conductivity type (eg, n-type) as those of the substrate 110 may be formed between the front protective part 160 and the anti-reflection portion 170. It is also possible to further include a front electric field (not shown).

In the solar cell according to the present invention, the front protection part 160 and the anti-reflection part 170 may be omitted. However, when the front protection unit 160 and the anti-reflection unit 170 are provided, the photoelectric conversion efficiency of the solar cell is further improved. Hereinafter, the front protection unit 160 and the anti-reflection unit 170 may be provided. Explain.

Here, the substrate 110 is a substrate 110 made of silicon of a first conductivity type, for example, an n-type conductivity. At this time, the silicon is crystalline silicon such as monocrystalline silicon or polycrystalline silicon.

When the substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb), and the like are doped into the substrate 110. Alternatively, the substrate 110 may be of a p-type conductivity type and may be made of a semiconductor material other than silicon. When the substrate 110 has a p-type conductivity type, the substrate 110 is doped with impurities of trivalent elements such as boron (B), gallium (Ga), indium (In), and the like.

The substrate 110 has a textured surface whose texturing surface is textured to be an uneven surface. As a result, the front protection part 160 and the anti-reflection part 170 positioned on the front surface of the substrate 110 also have an uneven surface.

1 and 2, the substrate 110 may have a texturing surface on the back as well as on the front. In this case, the rear protection part 150, the plurality of emitter parts 121, and the rear electric field part 122 disposed on the rear surface of the substrate 110 may also have an uneven surface.

Next, the front protection part 160 may be formed on an incident surface of the substrate 110, that is, on the front surface, and may include at least one material of an intrinsic amorphous silicon (a-Si) film or a dielectric material. have. Here, the dielectric layer 150b may include at least one of silicon nitride (SiNx), silicon oxide (SiOx), HFO 2, and AL 2 O 3 .

The front protection part 160 converts a defect such as a dangling bond, which is mainly present on and near the surface of the substrate 110, into a stable bond, and is moved toward the surface of the substrate 110 by the defect. A passivation function is performed to reduce the disappearance of the transferred charge, thereby reducing the amount of charge lost on or near the surface of the substrate 110 by the defect.

In general, since defects are mainly present on or near the surface of the substrate 110, in the case of the embodiment, since the front protection part 160 is directly in contact with the surface of the substrate 110, the passivation function is further improved, and the amount of charge loss is increased. Is further reduced.

Next, the anti-reflection unit 170 is positioned on the front surface protection unit 160 to reduce the reflectivity of light incident on the solar cell 1 and increase selectivity in a specific wavelength region, thereby increasing the efficiency of the solar cell 1. .

The anti-reflection unit 170 may be formed of a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), or the like. In the present embodiment, the anti-reflection unit 170 may have a single layer structure but may have a multilayered layer structure such as a double layer, and may be omitted as necessary.

In addition, the anti-reflection unit 170 may contain hydrogen as described above with the front protection unit 160, thereby further enhancing the passivation function of the front protection unit 160.

The plurality of emitter units 121 are positioned to be spaced apart from the plurality of rear electric fields 122 on the rear surface of the substrate 110 and are formed to be parallel to the plurality of rear electric fields 122. That is, as shown in FIGS. 1 and 2, the rear electric field part 122 and the emitter part 121 are alternately positioned on the substrate 110.

The emitter part 121 has a second conductivity type opposite to the first conductivity type of the substrate 110, for example, a p-type conductivity type, and has a semiconductor different from the substrate 110, for example, Amorphous silicon. Accordingly, the emitter part 121 forms a hetero junction as well as a p-n junction with the substrate 110.

In this case, the emitter unit 121 may be formed by depositing impurities of the second conductivity type on the rear surface of the substrate 110.

However, when the emitter part 121 is formed of crystalline silicon like the substrate 110, the emitter part 121 may be formed by diffusing impurities of the second conductivity type into the back surface of the substrate 110.

The electron-hole pair, which is a charge generated by light incident on the substrate 110 due to a built-in potential difference due to a pn junction formed between the substrate 110 and the plurality of emitter portions 121, is formed of electrons. And electrons move toward n-type and holes move toward p-type. Therefore, when the substrate 110 is n-type and the plurality of emitter portions 121 are p-type, the separated holes move toward each emitter portion 121 and the separated electrons have a plurality of impurity concentrations higher than those of the substrate 110. It moves toward the rear electric field 122.

Since each emitter portion 121 forms a pn junction with the substrate 110, unlike the present embodiment, when the substrate 110 has a p-type conductivity type, the emitter portion 121 has an n-type conductivity type. Have In this case, the separated electrons move toward the plurality of emitter parts 121, and the separated holes move toward the plurality of rear electric field parts 122.

The plurality of emitters 121 may also perform a passivation function. In this case, the amount of electric charges dissipated on the rear surface of the crystalline semiconductor substrate 110 due to a defect is reduced, thereby improving the efficiency of the solar cell 1. .

Next, the plurality of rear electric field parts 122 are partially positioned on the rear surface of the substrate 110, and are regions in which impurities of the same first conductivity type as those of the substrate 110 are doped at a higher concentration than the substrate 110. For example, the plurality of backside fields 122 may be n + impurity regions.

As shown in FIGS. 1 and 2, the plurality of rear electric field parts 122 are alternately spaced apart from each other in parallel with the above-described emitter part 121 in the same direction on the rear surface of the substrate 110 and hydrogenated. It can be formed of an amorphous semiconductor such as amorphous silicon (a-Si: H).

However, the plurality of rear electric field 122 is alternately positioned in the direction parallel to the above-described emitter unit 121 on the rear of the substrate 110, as shown in FIGS. 1 and 2, the emitter unit 121 It may be formed so that the side contact is not spaced apart from. Hereinafter, as illustrated in FIGS. 1 and 2, for convenience of description, a case in which the plurality of rear electric fields 122 are formed to be spaced apart from the emitter unit 121 will be described as an example, and in each example, the plurality of rear electric fields An example in which the 122 is not spaced apart from the emitter portion 121 and the rear electric field portion 122 is formed in contact with the emitter portion 121 will be further described.

The rear electric field 122 interferes with the movement direction of electrons, that is, the hole movement toward the rear electric field 122 by the potential barrier due to the difference in the impurity concentration between the substrate 110 and the rear electric field 122. An electric field is formed to facilitate movement of electrons toward the electric field part 122.

 Accordingly, the amount of electric charge lost due to the recombination of electrons and holes in the rear electric field 122 and its vicinity or the first and second electrodes 141 and 142 is accelerated and the electrons move to the rear electric field 122. Increase the amount of electron transfer.

In addition, the electric field formed by the backside electric field 122 as described above may further improve the photovoltaic efficiency of the solar cell by improving the open voltage Voc of the solar cell.

The width of each emitter unit 121 and the width of each rear electric field unit 122 may be the same, but in some cases, the width of each emitter unit 121 may be the width of each rear electric field unit 122. It may be formed larger or smaller.

In addition, the thickness of each emitter unit 121 and the thickness of each rear electric field unit 122 may be the same or may be formed differently. For example, the emitter unit 121 and the rear electric field unit 122 may have a thickness of 10 nm to 20 nm, respectively.

Next, the rear protective part 150 may be formed on the upper rear side of the 110, and as shown in FIGS. 1 and 2, for example, the rear electric field part 122 is formed to be spaced apart from the emitter part 121. In this case, it may be formed between each emitter portion 121 and each rear electric field 122 formed on the rear surface of the substrate 110. However, as described above, when the rear electric field 122 is formed in contact with the emitter unit 121, the rear protection unit 150 may be formed to overlap a portion of the rear of the rear electric field 122.

The rear protective part 150 performs the passivation function in the same manner as the front protective part 160 to reduce the dissipation of the charges moved toward the rear surface of the substrate 110 by the defect.

The back protection part 150 may include one of an amorphous silicon layer (a-Si), a dielectric layer, and a thin film conductor layer having electrical conductivity. Here, the dielectric layer may include at least one of silicon nitride (SiNx), silicon oxide (SiOx), HFO 2, and AL 2 O 3 . In addition, the amorphous silicon layer (a-Si) of the rear protective part 150 may be an intrinsic amorphous silicon layer (ia-Si) containing no trivalent or pentavalent impurities.

The thickness of the rear protection part 150 may be formed to be the same as the thickness of the emitter part 121 or the rear electric field part 122, but in some cases, the thickness of the rear protection part 150 is the emitter part 121. B may be formed larger or smaller than the thickness of the rear electric field 122.

The plurality of first electrodes 141 are positioned on each emitter portion 121 positioned on the rear surface of the substrate 110 and electrically connected to the plurality of emitter portions 121.

The plurality of first electrodes 141 positioned on the plurality of emitter portions 121 extend along the plurality of emitter portions 121 and are electrically connected to the plurality of emitter portions 121. Each first electrode 141 collects charges, for example, holes, which have migrated toward the corresponding emitter section 121.

The plurality of second electrodes 142 are positioned on the plurality of rear electric field parts 122, extend along the plurality of rear electric field parts 122, and are electrically connected to the plurality of rear electric field parts 122. . Each second electrode 142 collects charge, for example, electrons, which move toward the corresponding backside field 122.

The plurality of first and second electrodes 141 and 142 may include nickel (Ni), copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), and indium (In). It may be made of at least one conductive material selected from the group consisting of titanium (Ti), gold (Au), and combinations thereof, but may be made of other conductive metal materials. As such, since the plurality of first and second electrodes 141 and 142 are made of a metal material, light passing through the substrate 110 is reflected toward the substrate 110.

The operation of the solar cell 1 according to this embodiment having such a structure is as follows.

When light is irradiated to the solar cell 1 and incident on the substrate 110 of the semiconductor through the anti-reflection film 130 and the emitter part 120, electron-hole pairs are generated in the substrate 110 of the semiconductor by light energy. At this time, the reflection loss of the light incident on the substrate 110 by the anti-reflection film 130 is reduced to increase the amount of light incident on the substrate 110.

These electron-hole pairs are separated from each other by a pn junction of the substrate 110 and the emitter portion 120 so that the holes and electrons are, for example, n-type conductivity with the emitter portion 120 having a p-type conductivity type. Each of them moves toward the rear electric field 122 of the substrate 110 having the type. As such, holes moved toward the emitter unit 120 are collected by the first electrode 141, and electrons moved toward the rear electric field unit 122 are collected by the second electrode 142. When the first electrode 141 and the second electrode 142 are connected to the second electrode and the first electrode of a neighboring solar cell, respectively, a current flows, and this is used as power from the outside.

Meanwhile, as shown in FIGS. 1 and 2, the first electrode 141 of the solar cell according to the present invention is formed so that at least a portion of the solar cell 150 overlaps the rear protective part 150.

That is, the first electrode 141 is formed on the rear of the emitter unit 120 so that at least a portion of the first electrode 141 overlaps the rear protector 150. It may be formed to extend to the upper back of the (150).

In addition, although the second electrode 142 does not overlap the rear protection part 150 in FIGS. 1 and 2, the second electrode 142 may also overlap a portion of the rear protection part 150.

In this case, the width (not shown) of the region where the second electrode 142 overlaps with the rear protection part 150 is the width W150 of the region where the first electrode 141 overlaps with the rear protection part 150. Can be less than

Here, the reason why the first electrode 141 overlaps the rear protection unit 150 and the reason why the second electrode 142 overlaps the rear protection unit 150 are different.

Specifically, the reason why the second electrode 142 overlaps with the rear protection part 150 is different from that shown in FIGS. 1 and 2 due to an error in the manufacturing process, so that the second electrode 142 is the rear protection part 150. ) May be overlapped with the first electrode 141 so that at least a portion of the first electrode 141 overlaps the rear protection part 150 to improve the collection efficiency of charges (ie, holes) collected toward the emitter part 121. to be.

Therefore, in the present invention, even if the second electrode 142 overlaps the rear protection part 150, the second electrode 142 is the rear protection part in consideration of the carrier collection efficiency of the emitter part 121 as described above. The width (not shown) of the region overlapping with 150 may be smaller than the width W150 of the region where the first electrode 141 overlaps with the rear protective part 150.

More specifically, with reference to Figure 3 will be described.

First, when the substrate 110 contains an n-type impurity, the rear field part 122 becomes an n + region. Accordingly, as described above, the rear electric field part 122 forms the first electric field EF122 by the potential barrier, and the first electric field EF122 pushes the holes.

Accordingly, the holes do not move irregularly due to the influence of the first electric field EF122 of the rear electric field 122, but move in the direction of the emitter unit 121 along the boundary surface of the first electric field EF122. The electrons are shortened, and the electrons move faster to the rear electric field 122 by the influence of the first electric field EF 122 of the rear electric field 122.

In addition, as shown in the present invention, when the first electrode 141 extends from the rear surface of the emitter portion 121 to the upper portion of the rear surface of the rear protection portion 150, most of the holes collected by the first electrode 141 are described above. As shown in FIG. 3, some of the holes collected by the first electrode 141 are used as external power through the conductive wires, but the first electrode 141 extends to the upper rear surface of the rear protective part 150. To move along, there is up to the rear upper portion of the rear protection unit 150.

In this case, due to the holes present in the first electrode 141 located on the upper rear side of the rear protection unit 150, the first electrode 141 located on the upper rear side of the rear protection unit 150 is generally ( (+) Of the first electrode 141 located in the upper portion of the rear surface of the rear protection part 150, as shown in FIG. 3, in the substrate 110 having the polarity and in contact with the rear protection part 150. ) The second electric field EF141 is formed by the polarity.

As described above, the second electric field EF141 due to the positive polarity of the first electrode 141 pushes the holes by repulsive force, and the holes are irregular due to the influence of the second electric field EF141. The movement path is shortened by moving in the direction of the emitter portion 121 along the boundary surface of the second electric field EF141 without moving to.

In addition, the second electric field EF141 due to the positive polarity of the first electrode 141 prevents holes from reaching the interface between the substrate 110 and the rear surface protection part 150, thereby preventing the holes from reaching the interface 110. Holes at the interface of the rear protective part 150 may be prevented from being recombined and extinguished by a defect.

Therefore, according to the present invention, the first electrode 141 extends from the rear surface of the emitter portion 121 to the upper surface of the rear surface of the rear protection portion 150, thereby further improving the efficiency of the solar cell.

The same principle can be applied to the case where the substrate 110 contains p-type impurities. That is, when the substrate 110 contains a p-type impurity, the rear electric field part 122 becomes a p + region, and the emitter part 121 becomes an n region. In this case, the hole moves to the rear electric field part 122, and the electron moves to the emitter part 121.

In this case, as described above, when the first electrode 141 positioned above the emitter unit 121 extends to the upper rear side of the rear protection unit 150, the electrons moved to the first electrode 141. Is present on the upper rear side of the rear protection unit 150, so that the first electrode 141 located on the upper rear side of the rear protection unit 150 has a negative polarity.

Therefore, an electric field is formed in the inside of the substrate 110 in contact with the rear protection part 150 by the negative polarity. Accordingly, the electrons collected by the emitter unit 121 may be prevented from being recombined and extinguished by a defect at the interface between the rear protective unit 150 and the substrate 110.

Here, as shown in FIG. 2, the width W141 at which the first electrode 141 overlaps with the upper portion of the rear surface of the rear protection portion 150 is greater than or equal to 50% and less than 100% of the width W150 of the rear protection portion 150. This can be done.

Here, the width of the first electrode 141 overlaps with the upper portion of the rear surface of the rear protection part 150 such that the width W141 is greater than or equal to 50% of the width W150 of the rear protection portion 150. In order to form a second electric field (EF141) of a suitable size inside the substrate 110 in contact with the ().

That is, when the width W141 of the first electrode 141 overlaps with the upper rear surface of the rear protection unit 150 is less than 50% of the width W150 of the rear protection unit 150, the rear protection unit 150 Since the width and size of the second electric field EF141 formed in the contacting substrate 110 are not sufficient, the first electric field EF122 by the rear electric field 122 and the second electric field by the first electrode 141 are not sufficient. A valley is formed between the EF141 so that a carrier (electron or hole) is provided in the valley between the first electric field EF122 and the second electric field EF141, thereby increasing the carrier collection efficiency of the emitter unit 121. Rather, it can be degraded.

In addition, the width of the first electrode 141 overlapping with the upper portion of the rear surface of the rear protective portion 150 is less than 100% of the width of the rear protective portion. This is to prevent the first electrode 141 from being short-circuited with the adjacent rear electric field 122 or the second electrode 142 by being spaced apart from the second electrode 142 at an appropriate interval.

In this manner, the area of the first electrode 141 overlapping the upper portion of the rear surface of the rear protective portion 150 may be 50% or more and less than 100% of the area of the rear protective portion 150.

Accordingly, as shown in FIG. 2, the first electrode 141 covers the upper most of the rear surface of the rear protection part 150 while maintaining an appropriate distance from the rear electric field 122 or the second electrode 142. As described above, a second electric field EF141 having an appropriate size may be formed in the substrate 110 in contact with the rear protection part 150.

Until now, the case where the layer of the rear protective part 150 is a single layer and the thickness of the rear protective part 150 is the same as the thickness of the rear electric field part 122 or the emitter part 121 has been described as an example. ) May be formed of a plurality of layers, and the thickness of the rear protection part 150 may also be thicker than the thickness of the rear electric field 122 or the emitter part 121.

4 is a view for explaining a second embodiment of a solar cell according to the present invention.

In FIG. 4, the rest of the configuration except for the rear protection part 150 is the same as described above with reference to FIGS. 1 to 3, and thus a detailed description thereof will be omitted.

As shown in FIG. 4, in the second embodiment of the solar cell according to the present invention, the thickness of the rear protective part 150 may be thicker than the thickness of the rear electric field part 122 or the emitter part 121. The rear protection part 150 may be formed of a plurality of layers.

More specifically, the back protection part 150 may include at least one of an amorphous silicon layer (a-Si, 150a), a dielectric layer 150b, and a thin film conductor layer (not shown), and the amorphous silicon layer (a-Si). , 150a may be in contact with the rear surface of the substrate 110, and at least one of the dielectric layer 150b and the thin film conductor layer (not shown) may be positioned on the rear surface of the amorphous silicon layer 150a.

Here, the amorphous silicon layer (a-Si, 150a) of the rear protection part 150 may be an intrinsic amorphous silicon layer (i-a-Si, 150a) as described above.

In FIG. 4, as an example, the back protection part 150 includes an intrinsic amorphous silicon layer (i-a-Si, 150a) and a dielectric layer 150b.

Here, when the rear protection part 150 includes an intrinsic amorphous silicon layer (ia-Si, 150a) and a dielectric layer 150b, the intrinsic amorphous silicon layer 150a is located at the rear of the substrate 110 and contains hydrogen. The dielectric layer 150b may be located behind the intrinsic amorphous silicon layer 150a.

Here, the amorphous silicon layer 150a contains impurities of the first conductivity type so that the amorphous silicon layer 150a is disposed between the substrate 110 and the second electrode 142 so that the amorphous silicon layer 150a is disposed between the substrate 110 and the second electrode 142. The same function as 122) may be performed. As such, when the amorphous silicon layer 150a contains an impurity of the first conductivity type, the amorphous silicon layer 150a may be referred to as a substantially rear electric field rather than the rear protective part 150.

As described above, when the amorphous silicon layer 150a contains impurities of the first conductivity type, not the intrinsic amorphous silicon layer (ia-Si), and functions substantially the same as the backside electric field 122, hereinafter, 'amorphous The back side electric field part 150a or the back side electric field part 150a 'with which the silicon layer 150a is replaced is referred to.

As such, when the intrinsic amorphous silicon layer (ia-Si) of the rear protective part 150 is replaced by the rear electric field part 150a, the rear electric field part 150a is formed in contact with the emitter part 121 and the rear protective part. The unit 150 may be positioned to overlap a portion of the rear electric field unit 150a.

In this case, the back protection part 150 may be made of only the dielectric layer 150b, or may include a thin film conductor layer (not shown) in addition to the dielectric layer 150b.

Here, the thickness of the rear electric field unit 150a may be the same as the thickness of the rear electric field unit 122 positioned between the second electrode 142 and the substrate 110.

As such, when the amorphous silicon layer 150a is replaced by the rear electric field unit 150a, the first conductive type contained in the rear electric field unit 150a may be formed inside the substrate 110 in contact with the rear electric field unit 150a. Along with the potential barrier due to impurities, the second electric field EF141 due to the positive polarity of the first electrode 141 on the upper surface of the rear protection part 150 may be combined to generate a stronger electric field.

In addition, the dielectric layer 150b may be formed of at least one or more layers including at least one of SiNx, SiOx, HfO 2, and AL 2 O 3.

5A and 5B are views for explaining a third embodiment of a solar cell according to the present invention.

In FIGS. 5A and 5B, detailed descriptions of the same parts described above with reference to FIGS. 1 to 4 will be omitted, and description will be given based on parts having different configurations.

As shown in FIG. 5A, in the third embodiment of the solar cell according to the present invention, the back protection part 150 may include an amorphous silicon layer 150a, a dielectric layer 150b, and a thin film conductor layer 150c. .

Here, the amorphous silicon layer 150a is located at the rear surface of the substrate 110, and the dielectric layer 150b and the thin film conductor layer 150c are located at the rear surface of the amorphous silicon layer 150a, as shown in FIG. 5A. The dielectric layer 150b and the thin film conductor layer 150c may be sequentially formed on the rear surface of the amorphous silicon layer 150a.

Here, the amorphous silicon layer 150a of the rear protective part 150 may be an intrinsic amorphous silicon layer (ia-Si), and the thin film conductor layer 150c may include a conductive material, for example, a metal thin film or a metal. It may include nanoparticles.

The thickness T150c of the thin film conductor layer 150c may be smaller than the thicknesses T150a and T150b of the amorphous silicon layers a-Si and 150a and the dielectric layer 150b.

For example, when the thicknesses T150a and T150b of each of the amorphous silicon layer a-Si 150a and the dielectric layer 150b are between 5 nm and 10 nm, the thickness T150c of the thin film conductor layer 150c is smaller than this. It can be formed within a range.

The thin film conductor layer 150c may be located between the amorphous silicon layer 150a and the dielectric layer 150b and may be spaced apart from each of the emitter portion 121 and the rear electric field portion 122 at a predetermined distance D. Can be.

Here, the thin film conductor layer 150c is spaced apart from the emitter part 121 and the rear electric field part 122 at a predetermined distance D by the emitter part 121 and the rear electric field part through the thin film conductor layer 150c. This is to prevent the 122 from being short-circuited with each other and to prevent the carrier (for example, electrons or holes) existing in the amorphous silicon layer 150a from escaping to the emitter portion 121 or the rear electric field portion 122. .

On the other hand, although not shown here, the amorphous silicon layer 150a does not include an intrinsic amorphous silicon layer (ia-Si) as described above with reference to FIG. 150a may be replaced with a backside electric field having the same function as the backside electric field 122 positioned between the substrate 110 and the second electrode 142.

Accordingly, the rear electric field unit 150a may be formed in contact with the emitter unit 121, and the rear protection unit 150 may be positioned to overlap the rear portion of the rear electric field unit 150a.

In addition, in FIG. 5A, the thickness of the rear electric field part 150a overlapping the rear protection part 150 is smaller than the thickness of the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. Alternatively, the thickness of the rear electric field part 150a overlapping the rear protective part 150 is formed to be equal to the thickness of the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. In addition, the rear electric field part 150a overlapping the rear protective part 150 may be formed together when forming the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. .

In this case, the rear protective part 150 overlapping the rear electric field part 150a includes a dielectric layer 150b and a thin film conductor layer 150c, and the dielectric layer 150b and the thin film conductor layer 150c are rear surfaces. It may be sequentially formed on the rear of the electric field unit (150a).

As such, the first electric field EF122 described above with reference to FIG. 3 may be formed in the rear electric field 150a overlapping the rear protective part 150, and the rear protective part 150 may be formed of a thin film conductor layer ( 150c) to further increase the size of the second electric field EF141 described with reference to FIG. 3.

More specifically, as shown in FIG. 5B, when the first electrode 141 is formed to extend to the upper rear surface of the rear protection unit 150, the first electrode 141 is formed on the rear upper portion of the rear protection unit 150 as described above. Holes exist in the first electrode 141 to form an electric field due to the positive polarity of the first electrode 141.

In this case, the electric field due to the positive polarity of the first electrode 141 attracts the free electrons present in the rear electric field part 150a to the attraction force.

Accordingly, the thin film conductor layer 150c has a negative polarity while the free electrons existing in the amorphous silicon layer 150a move and exist, and the amorphous silicon layer 150a is relatively It has a positive polarity.

For reference, when a portion of the thin film conductor layer 150c is connected to the emitter portion 121, free electrons moved to the thin film conductor layer 150c may be recombined with holes in the emitter portion 121. A portion of 150c is preferably spaced apart from the emitter portion 121.

In addition, when a part of the thin film conductor layer 150c is connected to the rear electric field 122 positioned between the substrate 110 and the second electrode 142, the carriers (electrons) collected by the rear electric field 122 are thin film. Since the conductive layer 150c may flow into the conductive layer 150c, the thin film conductor layer 150c may be spaced apart from the rear electric field 122.

Therefore, the rear electric field part 150a overlapping with the rear protection part 150 has a positive polarity as a result, and the rear electric field part 150a is formed inside the substrate 110 in contact with the rear electric field part 150a. The second electric field EF141 is formed by the positive polarity.

As such, the rear electric field part 150a overlapping the rear protective part 150 may be formed by the first electric field EF122 and the positive polarity due to the impurity of the first conductivity type included in the rear electric field part 150a. The two electric fields EF141 are formed inside the substrate 110 in contact with the rear electric field part 150a.

Here, since the second electric field EF141 due to the positive polarity of the rear electric field part 150a is relatively adjacent to the substrate 110 than the electric field of the first electrode 141, the second electric field EF141 is relatively in the substrate 110. By forming a stronger electric field, holes at the interface between the rear protective part 150 and the substrate 110 may be more effectively prevented from being recombined and extinguished by a defect. Thereby, the efficiency of a solar cell can be improved further.

6A and 6B are views for explaining a fourth embodiment of a solar cell according to the present invention.

In FIG. 6A and FIG. 6B, the description of the same parts as described above will be omitted, and other parts will be mainly described.

6A and 6B, descriptions of the same parts as those of FIGS. 5A and 5B are omitted in the description of the amorphous silicon layer 150a, the dielectric layer 150b, and the thin film conductor layer 150c. As shown in FIG. 6A, in the fourth embodiment of the solar cell according to the present invention, the back protection part 150 includes an intrinsic amorphous silicon layer 150a, a dielectric layer 150b, and a thin film conductor layer 150c. However, the thin film conductor layer 150c may be positioned between the dielectric layers 150b or inside the dielectric layer 150b, and a part of the thin film conductor layer 150c may be electrically connected to the emitter portion 121.

More specifically, the thin film conductor layer 150c is spaced apart from the rear electric field part 122, but a part thereof may be electrically connected to the emitter part 121.

In this case, as shown in FIG. 6B, as described above, the first electrode 141 on the rear surface of the rear protection part 150 forms an electric field with a positive polarity.

In addition, some of the carriers (holes) collected by the emitter unit 121 may flow into the thin film conductor layer 150c. In this case, the thin film conductor layer 150c has a (+) polarity due to the inflow of holes, and thus has an electric field due to the (+) polarity.

Accordingly, a second electric field EF141 is formed in the substrate 110 in contact with the amorphous silicon layer 150a by the positive polarity of the first electrode 141 and the thin film conductor layer 150c.

Meanwhile, as shown in FIG. 6A, when the rear protection part 150 includes an amorphous silicon layer 150a, a dielectric layer 150b, and a thin film conductor layer 150c, the amorphous silicon layer of the back protection part 150 is provided. The 150a may be an intrinsic amorphous silicon layer (ia-Si). Alternatively, the amorphous silicon layer 150a may be formed of a non-intrinsic amorphous silicon layer (ia-Si), as described above with reference to FIGS. 4 and 5a. Since the impurity of one conductivity type is contained, the amorphous silicon layer 150a may be replaced with a backside electric field having the same function as the backside electric field 122 positioned between the substrate 110 and the second electrode 142.

Accordingly, the rear electric field unit 150a may be formed in contact with the emitter unit 121, and the rear protection unit 150 may be positioned to overlap the rear portion of the rear electric field unit 150a.

In addition, in FIG. 5A, the thickness of the rear electric field part 150a overlapping the rear protection part 150 is smaller than the thickness of the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. Alternatively, the thickness of the rear electric field part 150a overlapping the rear protective part 150 is formed to be equal to the thickness of the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. In addition, the rear electric field part 150a overlapping the rear protective part 150 may be formed together when forming the rear electric field part 122 positioned between the substrate 110 and the second electrode 142. .

In this case, the rear protective part 150 overlapping the rear electric field part 150a may include a dielectric layer 150b and a thin film conductor layer 150c, and the thin film conductor layer 150c may be disposed between the dielectric layer 150b. Alternatively, a portion of the thin film conductor layer 150c may be electrically connected to the emitter portion 121. The dielectric layer 150b may be electrically connected to the emitter portion 121.

As such, the first electric field EF122 described above with reference to FIG. 3 may be formed in the rear electric field 150a overlapping the rear protective part 150, and the rear protective part 150 may be formed of a thin film conductor layer ( 150c) to further increase the size of the second electric field EF141 described with reference to FIG. 3.

As described above, when the amorphous silicon layer 150a is replaced by the rear electric field, as shown in FIG. 6B, free electrons present in the rear electric field 150a are formed at the interface between the rear electric field 150a and the dielectric 150c. As a result, the interface between the rear electric field part 150a and the substrate 110 becomes a relatively positive polarity. Accordingly, the rear electric field part 150a containing the impurity of the first conductivity type may further increase the strength of the second electric field EF141 due to the (+) polarity of the first electrode 141 and the thin film conductor layer 150c. Can be.

At the interface between the rear electric field part 150a and the substrate 110, carriers (eg, holes) may be more effectively prevented from being recombined and destroyed by defects. Thereby, the efficiency of a solar cell can be improved further.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (16)

A substrate containing impurities of a first conductivity type;
An emitter portion formed on a rear surface of the substrate and containing impurities of a second conductivity type opposite to the first conductivity type;
A rear electric field part formed on a rear surface of the substrate and containing impurities of the same type as the first conductivity type at a higher concentration than the substrate;
A rear protective part formed on an upper rear side of the substrate;
A first electrode formed on a rear surface of the emitter unit; And
And a second electrode formed on a rear surface of the rear electric field part.
The first electrode is a solar cell formed so that at least a portion overlaps with the back protection. The method according to claim 1,
The backside protection part is a solar cell formed between the emitter portion and the backside electric field of the upper back of the substrate. The method according to claim 1,
The second electrode is formed so as to overlap a portion of the rear protection portion, the width of the region where the second electrode overlaps with the rear protection portion is less than the width of the region where the first electrode overlaps with the rear protection portion battery. The method according to claim 1,
The first electrode is overlapped with the upper portion of the rear protection portion of the solar cell is 50% or more than 100% of the width of the rear protection portion. The method according to claim 1,
An area of the first electrode overlapping with an upper portion of a rear surface of the rear protective portion is at least 50% and less than 100% of the rear protective portion. The method according to claim 1,
The back surface protection unit includes at least two or more layers of an amorphous silicon layer (a-Si), a dielectric layer, and an electrically conductive thin film conductor layer. The method of claim 6,
And the amorphous silicon layer is located at the rear side of the substrate, and at least one of the dielectric layer and the thin film conductor layer is located at the rear side of the amorphous silicon layer. The method of claim 6,
And a thin film conductor layer and the dielectric layer are sequentially formed on a rear surface of the amorphous silicon layer. 6. The method of claim 5,
A portion of the thin film conductor layer is electrically connected to the emitter portion. The method of claim 6,
The dielectric layer includes at least one of SiNx, SiOx, HfO 2 and AL 2 O 3 . The method of claim 6,
The thickness of the thin film conductor layer is less than the thickness of the amorphous silicon layer (a-Si) and the dielectric layer. The method of claim 6,
The thin film conductor layer is a solar cell comprising a metal thin film or metal nanoparticles. The method according to claim 1,
The emitter part and the rear electric field part are in contact with each other,
The rear protector is a solar cell overlapping the position of the rear electric field portion. The method of claim 13,
And a rear protective part overlapping a portion of a rear surface of the rear electric field part in order to include an electrically conductive thin film conductor layer and a dielectric layer. The method of claim 13,
And a rear protective part overlapping a portion of a rear surface of the rear electric field part including an electrically conductive thin film conductor layer and a dielectric layer, wherein the thin film conductor layer is positioned between the dielectric layers. The method according to claim 1,
A solar cell is further formed on the front surface of the substrate to prevent the reflection of incident light.
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Cited By (4)

* Cited by examiner, † Cited by third party
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KR20160020859A (en) * 2014-08-14 2016-02-24 엘지전자 주식회사 Solar cell
KR20180050020A (en) * 2016-11-04 2018-05-14 엘지전자 주식회사 Solar cell
US10424681B2 (en) 2014-07-07 2019-09-24 Lg Electronics Inc. Solar cell
EP2980858B1 (en) * 2014-07-28 2021-06-30 LG Electronics Inc. Method for manufacturing a solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880989B1 (en) 2005-01-20 2007-03-09 Commissariat Energie Atomique SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND INTERDIGITAL STRUCTURE
WO2009096539A1 (en) * 2008-01-30 2009-08-06 Kyocera Corporation Solar battery element and solar battery element manufacturing method
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10424681B2 (en) 2014-07-07 2019-09-24 Lg Electronics Inc. Solar cell
EP2980858B1 (en) * 2014-07-28 2021-06-30 LG Electronics Inc. Method for manufacturing a solar cell
KR20160020859A (en) * 2014-08-14 2016-02-24 엘지전자 주식회사 Solar cell
KR20180050020A (en) * 2016-11-04 2018-05-14 엘지전자 주식회사 Solar cell
KR101868566B1 (en) * 2016-11-04 2018-06-19 엘지전자 주식회사 Solar cell

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