KR20130058416A - Substrate treating apparatus - Google Patents
Substrate treating apparatus Download PDFInfo
- Publication number
- KR20130058416A KR20130058416A KR1020110124411A KR20110124411A KR20130058416A KR 20130058416 A KR20130058416 A KR 20130058416A KR 1020110124411 A KR1020110124411 A KR 1020110124411A KR 20110124411 A KR20110124411 A KR 20110124411A KR 20130058416 A KR20130058416 A KR 20130058416A
- Authority
- KR
- South Korea
- Prior art keywords
- power source
- plate
- substrate
- chuck
- gas
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
Abstract
Description
The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.
Plasma is generated by very high temperature, strong electric fields or RF Electromagnetic Fields, and refers to an ionized gas state composed of ions, electrons, and radicals. The semiconductor device fabrication process employs a plasma to perform an etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.
1 is a view showing the structure of a conventional substrate processing apparatus.
Referring to FIG. 1, the
An object of the present invention is to provide a substrate processing apparatus for improving the selectivity by independently controlling the pulse frequency, duty ratio, and phase of power supplies applied to the process chamber.
The objects of the present invention are not limited thereto, and other objects not mentioned may be clearly understood by those skilled in the art from the following description.
According to one aspect of the invention, the process chamber and the space formed therein; A gas supply unit supplying a reaction gas into the process chamber; A chuck positioned inside the process chamber and supporting a substrate; An upper electrode positioned above the chuck to excite the reaction gas; An upper power source electrically connected to the upper electrode; A lower electrode installed at the chuck; A lower power source electrically connected to the lower electrode; A substrate processing apparatus may include a controller configured to independently control a frequency, a duty ratio, and a phase of each of the upper power source and the lower power source.
The upper power source may include a pulse DC power source, and the lower power source may include: a first lower power source for applying high frequency power; A substrate processing apparatus having a second lower power source for applying low frequency power may be provided.
In addition, the pulse DC power source may be provided with a substrate processing apparatus provided with any one of a negative pulse DC power source and a positive pulse DC power source.
The controller may be provided with a substrate processing apparatus that variably controls a pulse frequency and / or a duty ratio of the pulse DC power.
In addition, a substrate processing apparatus may be provided in which a variable range of the pulse frequency is provided at a frequency of 1 Hz to 900 KHz, and a variable range of the impact ratio is provided at 10% to 90%.
The controller may be further configured to control the first lower power source to have a frequency of 27.56 MHz to 200 MHz, and to control the second lower power source to have a frequency of 1 kHz to 13.56 MHz.
According to an embodiment of the present invention, the upper power supply is provided as a pulse DC power supply, and the control unit independently controls the pulse frequency, the duty ratio, and the phase of the upper power supply and the lower power supply. It has the effect of improving the selection ratio.
Moreover, according to the Example of this invention, there exists an effect which improves a yield.
1 is a view showing the structure of a conventional substrate processing apparatus.
2 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
3 to 4 are graphs showing an example of a frequency, an impact coefficient, and a phase of power applied to the first upper power supply and the lower power supply of FIG. 2.
Hereinafter, a substrate processing apparatus according to an exemplary embodiment will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
2 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
Referring to FIG. 2, the
The
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The
A
The matching
The
The
The
The
The second
The
The
An insulating
The
The
The
The
The
The
The upper
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As shown in FIGS. 3 to 4, the
The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention.
Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.
** Explanation of symbols on the main parts of the drawing **
100: process chamber 200: chuck
300: gas supply unit 400: plasma generation unit
500: heating unit 600: control unit
Claims (2)
A gas supply unit supplying a reaction gas into the process chamber;
A chuck positioned inside the process chamber and supporting a substrate;
An upper electrode positioned above the chuck to excite the reaction gas;
An upper power source electrically connected to the upper electrode;
A lower electrode installed at the chuck;
A lower power source electrically connected to the lower electrode;
And a controller for independently controlling a frequency, a duty ratio, and a phase of the upper power source and the lower power source, respectively.
The upper power source is provided as a pulse DC power source,
The lower power source,
A first lower power source for applying high frequency power;
A substrate processing apparatus having a second lower power source for applying low frequency power.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110124411A KR20130058416A (en) | 2011-11-25 | 2011-11-25 | Substrate treating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110124411A KR20130058416A (en) | 2011-11-25 | 2011-11-25 | Substrate treating apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130058416A true KR20130058416A (en) | 2013-06-04 |
Family
ID=48857689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110124411A KR20130058416A (en) | 2011-11-25 | 2011-11-25 | Substrate treating apparatus |
Country Status (1)
Country | Link |
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KR (1) | KR20130058416A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101585945B1 (en) * | 2014-07-16 | 2016-01-18 | 에이피티씨 주식회사 | Apparatus of etching a semiconductor device using plasma and method of etching the semiconductor device using the same |
US9490107B2 (en) | 2014-05-12 | 2016-11-08 | Samsung Electronics Co., Ltd. | Plasma apparatus and method of fabricating semiconductor device using the same |
-
2011
- 2011-11-25 KR KR1020110124411A patent/KR20130058416A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9490107B2 (en) | 2014-05-12 | 2016-11-08 | Samsung Electronics Co., Ltd. | Plasma apparatus and method of fabricating semiconductor device using the same |
KR101585945B1 (en) * | 2014-07-16 | 2016-01-18 | 에이피티씨 주식회사 | Apparatus of etching a semiconductor device using plasma and method of etching the semiconductor device using the same |
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E601 | Decision to refuse application |