KR101736843B1 - Appatus for generating plasma, and apparatus for treating substrate comprising the same - Google Patents

Abstract

The present invention relates to a plasma generating apparatus capable of stabilizing impedance matching and a substrate processing apparatus including the plasma generating apparatus. An apparatus for generating plasma according to an embodiment of the present invention includes: an upper RF power supply for providing a first RF power; An upper electrode for generating plasma by receiving the first RF power; A lower electrode disposed to face the upper electrode; A lower RF power source connected to the lower electrode and providing a second RF power; And a second RF power supply connected to the upper RF power supply and the upper electrode for receiving the first RF power and outputting the second RF power to the upper electrode, And a circulator for blocking output of the output signal.

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma generating apparatus and a substrate processing apparatus including the plasma generating apparatus.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma generating apparatus and a substrate processing apparatus including the plasma generating apparatus, and more particularly, to a plasma processing apparatus using a circulator.

The semiconductor manufacturing process may include processing the substrate using plasma. Plasma is an ionized gas generated by a very high temperature, a strong electric field, or a RF electromagnetic field and composed of ions, electrons, and radicals. The semiconductor device fabrication process employs a plasma to perform an etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.

In capacitive coupled plasma (CCP) etching equipment, which is one of the plasma processing equipment, RF power is applied to the upper electrode and the lower electrode to generate plasma. In this case, the upper and lower RF systems are connected in series to cause a series resonance phenomenon. In addition, since a high aspect ratio is required in manufacturing semiconductor devices, high RF power is applied. In this case, it is necessary to secure the stability of the RF system.

The present invention is intended to improve the stability of the RF power supply by reducing the series resonance phenomenon of the upper and lower RF systems in a plasma generating apparatus, for example, a CCP etching apparatus.

The present invention is for facilitating impedance matching in a plasma generating apparatus.

The present invention is also intended to reduce process asymmetry in the plasma process.

The objects to be solved by the present invention are not limited to the above-mentioned problems, and the matters not mentioned above can be clearly understood by those skilled in the art from the present specification and the accompanying drawings .

An apparatus for generating plasma according to an embodiment of the present invention includes: an upper RF power supply for providing a first RF power; An upper electrode for generating plasma by receiving the first RF power; A lower electrode disposed to face the upper electrode; A lower RF power source connected to the lower electrode and providing a second RF power; And a second RF power supply connected to the upper RF power supply and the upper electrode for receiving the first RF power and outputting the second RF power to the upper electrode, And a circulator for blocking output of the output signal.

The circulator may output the second RF power flowing from the lower electrode to the upper electrode to a ground node.

Wherein the circulator includes a first port connected to the upper RF power source, a second port connected to the upper electrode, and a third port connected to the ground node, the input of the first port being output to the second port, And the input of the second port can be output to the third port.

The first port receives the first RF power from the upper RF power source and the second port receives the second RF power transmitted to the upper electrode.

The plasma generator may include a chamber including an upper electrode and a lower electrode and an inner space formed therein for performing a process, and the third port may be formed in a radial structure on an upper portion of the chamber.

The frequency of the first RF power may be higher than the frequency of the second RF power.

The plasma generator may further include an upper impedance matching unit connected between the upper RF power supply and the circulator.

The plasma generator may further include a lower impedance matching unit connected between the lower RF power source and the lower electrode.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber having a space for processing a substrate therein; A substrate support assembly located within the chamber and supporting the substrate; A gas supply unit for supplying gas into the chamber; And a plasma generating unit for exciting the gas in the chamber to a plasma state, the plasma generating unit comprising: an upper RF power supply for providing a first RF power; An upper electrode for generating plasma by receiving the first RF power; A lower electrode included in the substrate support assembly and disposed to face the upper electrode; A lower RF power source connected to the lower electrode and providing a second RF power; And a second RF power supply connected to the upper RF power supply and the upper electrode for receiving the first RF power and outputting the second RF power to the upper electrode, And a circulator for blocking output of the output signal.

The circulator may output the second RF power flowing from the lower electrode to the upper electrode to a ground node.

Wherein the circulator includes a first port connected to the upper RF power source, a second port connected to the upper electrode, and a third port connected to the ground node, the input of the first port being output to the second port, And the input of the second port can be output to the third port.

The first port receives the first RF power from the upper RF power source and the second port receives a second RF power transmitted to the upper electrode.

The third port may be formed in a radial structure on the upper portion of the chamber.

The frequency of the first RF power may be higher than the frequency of the second RF power.

The plasma generating unit may further include an upper impedance matching unit connected between the upper RF power supply and the circulator.

The plasma generating unit may further include a lower impedance matching unit connected between the lower RF power source and the lower electrode.

According to an embodiment of the present invention, the stability of the RF power supply can be improved by reducing the series resonance phenomenon of the upper and lower RF systems when using a plasma generating apparatus, for example, a CCP etching apparatus.

According to an embodiment of the present invention, impedance matching can be easily performed when using the plasma generating apparatus.

In addition, according to an embodiment of the present invention, it is possible to reduce process asymmetry in a plasma process.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is an exemplary diagram showing a substrate processing apparatus according to an embodiment of the present invention.
2 is an exemplary diagram for explaining a configuration of a plasma generating unit according to an embodiment of the present invention.
3 is an exemplary diagram for explaining a circulator used in a plasma generating apparatus according to an embodiment of the present invention.
Figure 4 is an exemplary view showing that a third port of the circulator is radially formed in the chamber.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Unless defined otherwise, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. The term 'and / or' as used herein refers to each of the listed configurations or various combinations thereof.

1 is an exemplary diagram showing a substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to Fig. 1, a substrate processing apparatus 10 processes a substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 includes a chamber 100, a substrate support assembly 200, a gas supply unit 300, a plasma generation unit 400, and a heating unit 500.

The chamber 100 has a space 101 formed therein. The internal space 101 is provided as a space for performing a plasma processing process on the substrate W. [ The plasma treatment for the substrate W includes an etching process. On the bottom surface of the chamber 100, an exhaust hole 102 is formed. The exhaust hole 102 is connected to the exhaust line 121. The reaction byproducts generated in the process and the gas staying in the chamber 100 may be discharged to the outside through the exhaust line 121. The internal space 101 of the chamber 100 is depressurized to a predetermined pressure by the evacuation process.

A substrate support assembly 200 is positioned within the chamber 100. The substrate support assembly 200 supports the substrate W. [ The substrate support assembly 200 includes an electrostatic chuck for attracting and securing the substrate W using an electrostatic force. The substrate support assembly 200 includes a dielectric plate 210, a lower electrode 220, a heater 230, a support plate 240, and an insulation plate 270.

The dielectric plate 210 is located at the upper end of the substrate support assembly 200. The dielectric plate 210 is provided as a disk-like dielectric. A substrate W is placed on the upper surface of the dielectric plate 210. The upper surface of the dielectric plate 210 has a smaller radius than the substrate W. [ Therefore, the edge region of the substrate W is located outside the dielectric plate 210. A first supply passage 211 is formed in the dielectric plate 210. The first supply passage 211 is provided from the upper surface to the lower surface of the dielectric plate 210. A plurality of first supply passages 211 are provided spaced apart from each other and are provided as passages through which the heat transfer medium is supplied to the bottom surface of the substrate W. [ A separate electrode for attracting the substrate W to the dielectric plate 210 may be embedded in the dielectric plate 210. A DC current may be applied to the electrode. An electrostatic force acts between the electrode and the substrate due to the applied current, and the substrate W can be attracted to the dielectric plate 210 by the electrostatic force.

The lower electrode 220 is connected to the lower power supply unit 221. The lower power supply unit 221 applies power to the lower electrode 220. The lower power supply unit 221 includes lower RF power sources 222 and 223 and a lower impedance matching unit 225. A plurality of lower RF power sources 222 and 223 may be provided as shown in FIG. 1, or alternatively, only one lower RF power source may be provided. The lower RF power sources 222 and 223 can control the plasma density. The lower RF power sources 222 and 223 regulate ion bombardment energy. The plurality of lower RF power sources 222, 223 may generate frequency power of 2 MHz and 13.56 Hz, respectively. The lower impedance matching unit 225 is electrically connected to the lower RF power sources 222 and 223 and applies frequency powers of different sizes to the lower electrode 220.

The heater 230 is electrically connected to an external power source (not shown). The heater 230 generates heat by resisting a current applied from an external power source. The generated heat is transferred to the substrate W through the dielectric plate 21. The substrate W is maintained at a predetermined temperature by the heat generated in the heater 230. The heater 230 includes a helical coil. The heaters 230 may be embedded in the dielectric plate 210 at regular intervals.

A support plate 240 is disposed under the dielectric plate 210. The bottom surface of the dielectric plate 210 and the top surface of the support plate 240 may be adhered by an adhesive 236. [ The support plate 240 may be made of aluminum. The upper surface of the support plate 240 may be stepped so that the central region is located higher than the edge region. The upper surface central region of the support plate 240 has an area corresponding to the bottom surface of the dielectric plate 210 and is bonded to the bottom surface of the dielectric plate 210. The first circulation flow path 241, the second circulation flow path 242, and the second supply flow path 243 are formed in the support plate 240.

The first circulation channel 241 is provided as a passage through which the heat transfer medium circulates. The first circulation flow path 241 may be formed in a spiral shape inside the support plate 240. Alternatively, the first circulation flow path 241 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 241 can communicate with each other. The first circulation flow paths 241 are formed at the same height.

The second circulation passage 242 is provided as a passage through which the cooling fluid circulates. The second circulation flow path 242 may be formed in a spiral shape inside the support plate 240. Alternatively, the second circulation flow path 242 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the second circulation flow paths 242 can communicate with each other. The second circulation channel 242 may have a larger cross-sectional area than the first circulation channel 241. The second circulation flow paths 242 are formed at the same height. The second circulation channel 242 may be positioned below the first circulation channel 241.

The second supply passage 243 extends upward from the first circulation passage 241 and is provided on the upper surface of the support plate 240. The second supply passage 243 is provided in a number corresponding to the first supply passage 211 and connects the first circulation passage 241 and the first supply passage 211.

The first circulation channel 241 is connected to the heat transfer medium storage unit 252 through a heat transfer medium supply line 251. The heat transfer medium storage unit 252 stores the heat transfer medium. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium comprises helium (He) gas. The helium gas is supplied to the first circulation flow path 241 through the supply line 251 and is supplied to the bottom surface of the substrate W through the second supply flow path 243 and the first supply flow path 211 in order. The helium gas acts as a medium through which the heat transferred from the plasma to the substrate W is transferred to the substrate support assembly 200. The ion particles contained in the plasma are attracted to the electric force formed on the substrate support assembly 200 and move to the substrate support assembly 200, and collide with the substrate W during the movement to perform the etching process. Heat is generated in the substrate W during the collision of the ion particles with the substrate W. The heat generated in the substrate W is transferred to the substrate support assembly 200 through the helium gas supplied in the space between the bottom surface of the substrate W and the upper surface of the dielectric plate 210. Thereby, the substrate W can be maintained at the set temperature.

The second circulation flow passage 242 is connected to the cooling fluid reservoir 262 through a cooling fluid supply line 261. The cooling fluid is stored in the cooling fluid reservoir 262. A cooler 263 may be provided in the cooling fluid reservoir 262. The cooler 263 cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 263 may be installed on the cooling fluid supply line 261. The cooling fluid supplied to the second circulation channel 242 through the cooling fluid supply line 261 circulates along the second circulation channel 242 to cool the support plate 240. Cooling of the support plate 240 cools the dielectric plate 210 and the substrate W together to maintain the substrate W at a predetermined temperature.

An insulating plate 270 is provided under the support plate 240. The insulating plate 270 is provided in a size corresponding to the supporting plate 240. The insulating plate 270 is positioned between the support plate 240 and the bottom surface of the chamber 100. The insulating plate 270 is made of an insulating material and electrically insulates the supporting plate 240 from the chamber 100.

The focus ring 280 is disposed in the edge region of the substrate support assembly 200. The focus ring 200 has a ring shape and is disposed along the periphery of the dielectric plate 210. The upper surface of the focus ring 280 may be stepped so that the outer portion 280a is higher than the inner portion 280b. The upper surface inner side portion 280b of the focus ring 280 is located at the same height as the upper surface of the dielectric plate 210. [ The upper side inner side portion 280b of the focus ring 280 supports the edge region of the substrate W positioned outside the dielectric plate 210. [ The outer side portion 280a of the focus ring 280 is provided so as to surround the edge region of the substrate W. [ The focus ring 280 extends the electric field forming region such that the substrate W is positioned at the center of the region where the plasma is formed. Thereby, plasma is uniformly formed over the entire region of the substrate W, so that each region of the substrate W can be uniformly etched.

The gas supply unit 300 supplies the process gas to the chamber 100. The gas supply unit 300 includes a gas reservoir 310, a gas supply line 320, and a gas inlet port 330. The gas supply line 320 connects the gas storage part 310 and the gas inlet port 330 and supplies the process gas stored in the gas storage part 310 to the gas inlet port 330. The gas inlet port 330 is connected to the gas supply holes 412 formed in the upper electrode 410.

The plasma generating unit 400 excites the process gas staying inside the chamber 100. The plasma generating unit 400 includes an upper electrode 410, a distribution plate 420, and an upper power supply 440.

The upper electrode 410 is provided in a disc shape and is located on the upper side of the substrate support assembly 200. The upper electrode 410 includes an upper plate 410a and a lower plate 410b. The top plate 410a is provided in a disc shape. The upper plate 410a is electrically connected to the upper RF power supply 441. [ The top plate 410a applies the first RF power generated in the upper RF power supply 441 to the process gas staying in the chamber 100 to excite the process gas. The process gas is excited and converted to a plasma state. The bottom surface of the top plate 410a is stepped so that the central region is positioned higher than the edge region. Gas supply holes 412 are formed in the central region of the top plate 410a. The gas supply holes 412 are connected to the gas inlet port 330 and supply the process gas to the buffer space 414. A cooling passage 411 may be formed in the top plate 410a. The cooling passage 411 may be formed in a spiral shape. Alternatively, the cooling channels 411 may be arranged so that the ring-shaped channels having different radii have the same center. The cooling flow passage 411 is connected to the cooling fluid storage portion 432 through a cooling fluid supply line 431. The cooling fluid reservoir 432 stores the cooling fluid. The cooling fluid stored in the cooling fluid storage portion 432 is supplied to the cooling flow path 411 through the cooling fluid supply line 431. The cooling fluid circulates through the cooling passage 411 and cools the top plate 410a.

The lower plate 410b is located at the lower portion of the upper plate 410a. The lower plate 410b is provided in a size corresponding to the upper plate 410a, and is positioned facing the upper plate 410a. The upper surface of the lower plate 410b is stepped so that the central region is located lower than the edge region. The upper surface of the lower plate 410b and the lower surface of the upper plate 410a are combined with each other to form a buffer space 414. The buffer space 414 is provided in a space where the gas supplied through the gas supply holes 412 temporarily stays before being supplied into the chamber 100. Gas supply holes 413 are formed in the central region of the lower plate 410b. The plurality of gas supply holes 413 are spaced apart at regular intervals. The gas supply holes 413 are connected to the buffer space 414.

The distribution plate 420 is located at the bottom of the bottom plate 410b. The distribution plate 420 is provided in a disc shape. Distribution holes (421) are formed in the distribution plate (420). The distribution holes 421 are provided from the upper surface to the lower surface of the distribution plate 420. The distribution holes 421 are provided in a number corresponding to the gas supply holes 413 and are positioned corresponding to the positions where the gas supply holes 413 are located. The process gas staying in the buffer space 414 is uniformly supplied into the chamber 100 through the gas supply hole 413 and the distribution holes 421. [

The upper power supply 440 applies RF power to the top plate 410a. The upper power supply unit 440 includes an upper RF power supply 441 and an upper impedance matching unit 442.

The heating unit 500 heats the lower plate 410b. The heating unit 500 includes a heater 510, a second upper power source 520, and a filter 530. The heater 510 is installed inside the lower plate 410b. The heater 510 may be provided in an edge region of the lower plate 410b. The heater 510 includes a heating coil, and may be provided so as to surround the central region of the lower plate 410b. The second upper power source 520 is electrically connected to the heater 510. The second upper power source 520 may generate DC power. Alternatively, the second upper power supply 520 may generate AC power. The second frequency power generated in the second upper power supply 520 is applied to the heater 510, and the heater 510 generates heat by resisting the applied current. The heat generated in the heater 510 heats the bottom plate 410b and the heated bottom plate 410b heats the distribution plate 420 located below the bottom plate 410b to a predetermined temperature. The bottom plate 420 may be heated to a temperature of 60 ° C to 300 ° C. The filter 530 is electrically connected to the second upper power source 520 and the heater 510 in the interval between the second upper power source 520 and the heater 510.

2 is a schematic view for explaining a configuration of a plasma generating unit 400 used in a substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 2, a plasma generating unit according to an embodiment of the present invention includes an upper RF power source 441, an upper electrode 410, a lower electrode 220, lower RF power sources 222 and 223, and a circulator 443). And may include an upper impedance matching portion 442 and a lower impedance matching portion 225 connected to the upper and lower RF power sources, respectively.

The upper RF power supply 441 provides the first RF power and the upper electrode 410 receives the first RF power to generate plasma. The lower electrode 220 may be disposed to face the upper electrode 410. The lower RF power sources 222 and 223 may be connected to the lower electrode 220. The lower RF power source 222, 223 provides a second RF power through which the ionic particles contained in the plasma can migrate to the lower electrode.

The upper electrode 410 and the lower electrode 220 form a capacitor so that the upper power supply and the lower power supply can be connected in series. At this time, the element values of the upper and lower impedance matching portions 442 and 225 may be varied due to the occurrence of resonance. Also, due to the high impedance of the upper electrode 410, RF power supplied from the lower RF power sources 222 and 223 flows along the inner wall of the chamber, resulting in process asymmetry.

Therefore, in order to solve the above problems, the plasma generating unit according to the embodiment of the present invention includes a circulator 443 so that the upper power supply unit and the lower power supply unit are isolated.

Referring again to FIG. 2, a circulator 443 is disposed between the upper RF power supply 441 and the upper electrode 410.

The circulator 443 may be, for example, in the form shown in Fig. The circulator 443 may include a first port, a second port, and a third port. The circulator 443 can be used as an emergency half-element by placing a magnetic body such as ferrite in the centers of a plurality of connected ports and flowing an electromagnetic wave in a specific direction when a certain magnetic field is applied.

The circulator 443 included in the plasma generating apparatus according to an embodiment of the present invention receives the first RF power and outputs the first RF power to the upper electrode 410 and the inflow from the lower electrode 220 to the upper electrode 410 Thereby preventing the second RF power from being output to the upper RF power supply 441. The circulator 443 can output the second RF power flowing from the lower electrode 220 to the upper electrode 410 to the ground node.

The circulator 443 may include a first port coupled to the upper RF power supply 441, a second port coupled to the upper electrode 410, and a third port coupled to the ground node. The circulator 443 outputs the input of the first port to the second port and the input of the second port to the third port.

The plasma generator according to the embodiment of the present invention can minimize the resonance caused by the series connection of the upper and lower power supply parts by circulator 443 isolating the upper and lower power supply parts. Therefore, the upper and lower impedance matching portions 442 and 225 can be stabilized.

The plasma generator according to the embodiment of the present invention outputs the second RF power introduced from the lower electrode 220 to the upper electrode 410 to the ground node by the circulator 443 so that the current flowing in the outer wall of the chamber . This can reduce the plasma process asymmetry.

The circulator 443 according to the embodiment of the present invention has a third port for outputting the second RF power flowing from the lower electrode 220 to the upper electrode 410 to the ground node, . 4 is a top view of the chamber when the circulator according to one embodiment of the present invention is disposed on top of the chamber. As shown in FIG. 4, the third port may be formed radially to minimize the asymmetry of the plasma process. At this time, the first port and the second port may be formed in a direction from the upper part to the lower part of the chamber.

In the third port shown in FIG. 4, three sub-ports are formed in a radial shape, but the third port connected to the ground node may be formed in any form capable of enhancing the symmetry of the plasma process . Also, the third port may be a form in which one port is connected to the ground node.

It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modified embodiments may be included within the scope of the present invention. For example, each component shown in the embodiment of the present invention may be distributed and implemented, and conversely, a plurality of distributed components may be combined. Therefore, the technical protection scope of the present invention should be determined by the technical idea of the claims, and the technical protection scope of the present invention is not limited to the literary description of the claims, The invention of a category.

10: substrate processing apparatus
100: chamber
400: Plasma generating unit
410: upper electrode
441: Upper RF power source
442: upper impedance matching portion
443: Circulator
220: lower electrode
222, 223: Lower RF power source
225: lower impedance matching portion

Claims (16)

An upper RF power supply providing a first RF power;
An upper electrode for generating plasma by receiving the first RF power;
A lower electrode disposed to face the upper electrode;
A lower RF power source connected to the lower electrode and providing a second RF power;
The first RF power is received by the upper RF power source and the upper RF power is output to the upper electrode and the second RF power flowing into the upper electrode from the lower electrode is output to the upper RF power A circulator for shutting off the refrigerant;
An upper impedance matching unit connected between the upper RF power supply and the circulator; And
And a chamber including an upper space and an upper space,
The circulator including a first port connected to the upper RF power source, a second port connected to the upper electrode, and a third port connected to the ground node,
An input of the first port is output to the second port, an input of the second port is output to the third port,
And the third port is formed in a radial configuration on the top of the chamber.
The method according to claim 1,
The circulator includes:
And outputs the second RF power flowing from the lower electrode to the upper electrode to a ground node.
delete The method according to claim 1,
The first port receives the first RF power from the upper RF power source,
And the second port receives the second RF power transmitted to the upper electrode.
delete The method according to claim 1,
Wherein the frequency of the first RF power is higher than the frequency of the second RF power.
delete The method according to claim 1,
The plasma generating apparatus includes:
And a lower impedance matching unit connected between the lower RF power source and the lower electrode.
A chamber having a space for processing the substrate therein;
A substrate support assembly located within the chamber and supporting the substrate;
A gas supply unit for supplying gas into the chamber; And
And a plasma generating unit that excites gas in the chamber into a plasma state, the plasma generating unit comprising:
An upper RF power supply providing a first RF power;
An upper electrode for generating plasma by receiving the first RF power;
A lower electrode included in the substrate support assembly and disposed to face the upper electrode;
A lower RF power source connected to the lower electrode and providing a second RF power;
The first RF power is received by the upper RF power source and the upper RF power is output to the upper electrode and the second RF power flowing into the upper electrode from the lower electrode is output to the upper RF power A circulator for shutting off the output signal; And
And an upper impedance matching unit connected between the upper RF power supply and the circulator,
The circulator including a first port connected to the upper RF power source, a second port connected to the upper electrode, and a third port connected to the ground node,
An input of the first port is output to the second port, an input of the second port is output to the third port,
Wherein the third port is formed in a radial configuration on top of the chamber.
10. The method of claim 9,
The circulator includes:
And outputs the second RF power flowing from the lower electrode to the upper electrode to a ground node.
delete 10. The method of claim 9,
The first port receives the first RF power from the upper RF power source,
And the second port receives the second RF power transmitted to the upper electrode.
delete 10. The method of claim 9,
Wherein the frequency of the first RF power is higher than the frequency of the second RF power.
delete 10. The method of claim 9,
The plasma generating unit includes:
And a lower impedance matching unit connected between the lower RF power supply and the lower electrode.

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