KR20130053223A - Illumination package module and lighting device using the same - Google Patents

Illumination package module and lighting device using the same Download PDF

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Publication number
KR20130053223A
KR20130053223A KR1020110118878A KR20110118878A KR20130053223A KR 20130053223 A KR20130053223 A KR 20130053223A KR 1020110118878 A KR1020110118878 A KR 1020110118878A KR 20110118878 A KR20110118878 A KR 20110118878A KR 20130053223 A KR20130053223 A KR 20130053223A
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South Korea
Prior art keywords
light emitting
emitting surface
package module
lighting package
lighting
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Application number
KR1020110118878A
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Korean (ko)
Inventor
조현석
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엘지이노텍 주식회사
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Priority to KR1020110118878A priority Critical patent/KR20130053223A/en
Publication of KR20130053223A publication Critical patent/KR20130053223A/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/69—Details of refractors forming part of the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A lighting package module and a lighting device using the same are provided to reduce the area of a light source by placing a zener diode or a varistor at the outside of a light-emitting surface. CONSTITUTION: A light source module is placed on a substrate. A light-emitting surface(130) is placed on the light source module. Electrode pads(123,124) are placed on both outer sides of the light-emitting surface. An ESD(Electrostatic Discharge) protection element(140) is placed at the outside of the light-emitting surface. The protection element is separated from the electrode pads by a fixed distance.

Description

Lighting package module and lighting device using the same {ILLUMINATION PACKAGE MODULE AND LIGHTING DEVICE USING THE SAME}

Embodiments relate to a lighting package module and a lighting device using the same.

In general, a light emitting diode (LED) is a kind of semiconductor device that converts electrical energy into light. The light emitting diode (LED) has advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Accordingly, in recent years, a lot of researches are being conducted to replace an existing light source with a light emitting diode (LED), and it is widely used as a light source for various liquid crystal display devices, electronic displays, and street lamps that are used indoors and outdoors.

The conventional lighting package module provides a light emitting device chip disposed on an upper surface of a substrate, and forms a light emitting surface by injecting silicon (Silicone) containing a phosphor on the light emitting device chip. A zener diode or a varistor is disposed inside the light emitting surface to protect the light emitting device chip from an electrostatic discharge (ESD).

However, in the conventional lighting package module, since the light emitting device chip and the zener diode or the varistor are arranged together inside the light emitting surface, the zener positioned adjacent to the electrode pad due to the heat generated from the electrode pad PAD. There is a high risk of failure of a diode or varistor.

In addition, as the rated voltage of the light emitting device chip increases day by day, the specifications of the rated voltage of the Zener diode and the varistor are also required, so the size of the Zener diode and the varistor is increased. It also gets bigger. As a result, the area of the light emitting surface is inevitably designed to be large, and thus the size of the lighting product is increased, and the amount of silicon and the phosphor forming the light emitting surface is increased, resulting in a cost increase.

Korean Laid-Open Patent No. 2011-0105624 (published: 2011.09.27)

In order to solve the above problems, an embodiment of the present invention is to provide a lighting package module that can reduce the size of a lighting product by placing a zener diode located inside the light emitting surface outside the light emitting surface to reduce the light source area. And to present a lighting device using the same.

In addition, another technical problem to be achieved by the embodiment is, by placing a varistor (Varistor) located inside the light emitting surface to the outside of the light emitting surface to reduce the light source area, the lighting package module that can reduce the size of the lighting product and a lighting device using the same To present.

In addition, another technical problem to be achieved by the embodiment is to form a dome lens (Dome Lens) made of high-viscosity silicon to protect the Zener diode or varistor and the wire disposed outside the light emitting surface The present invention provides a lighting package module and a lighting device using the same.

The solution to the problem of the present invention is not limited to those mentioned above, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

As a means for solving the above-described technical problem, the lighting package module according to the embodiment, the substrate, the light source module disposed on the substrate, the light emitting surface disposed on the light source module and the outer portion of the light emitting surface An electrode pad disposed on the substrate and an ESD protection element disposed on the substrate outside the light emitting surface and spaced apart from the electrode pad by a predetermined distance.

Here, the ESD protection element may be configured using a Zener diode or a varistor. In this case, the zener diode may be formed using a printing process, and the varistor may be formed using a surface arrangement process (SMT).

The illumination package module forms a dome lens of high viscosity silicon on the ESD protection device. In this case, the dome lens may be formed using a dispensing method.

In the illumination package module, positive and negative electrode pads may be positioned in one diagonal direction outside the light emitting surface, and the ESD protection element may be positioned in the other diagonal direction outside the light emitting surface.

In addition, the illumination package module may have (+) and (-) electrode pads positioned in left and right directions outside the light emitting surface, and the ESD protection element may be positioned above or below the light emitting surface.

In addition, in the illumination package module, positive and negative electrode pads may be positioned in upper and lower directions outside the light emitting surface, and the ESD protection element may be positioned in a left or right direction outside the light emitting surface.

The substrate includes a substrate including metal, the light source module includes a plurality of COB packages, and the COB package is a single chip or a multi-chip or a single chip. And a multi-chip may be mixed.

The light emitting surface may include a circular white dam formed around the outside of the light source module and an encapsulant formed in the white dam to form the light emitting surface. Here, the white dam may be made of a silicon-based material containing TiO 2 . The TiO 2 may contain 60% to 80% by weight (%).

The encapsulant may be mixed with silicon and at least one phosphor.

In addition, as a means for solving the above technical problem, the lighting apparatus according to the embodiment may include the lighting package module.

According to the embodiment, the size of the lighting product can be reduced by placing a Zener diode or varistor located inside the light emitting surface outside the light emitting surface to reduce the light source area.

In addition, as the light emitting area becomes smaller, the volume of silicon and phosphor inside the light emitting surface is reduced, thereby saving material costs.

In addition, a dome lens may be formed of high viscosity silicon to protect a Zener diode or a varistor and a wire disposed outside the light emitting surface.

The effects of the present invention are not limited to those mentioned above, and other effects that are not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a configuration diagram of a lighting package module according to a first embodiment
FIG. 2 is a side view of the lighting package module shown in FIG. 1
3 is a configuration diagram of a lighting package module according to a second embodiment
4 is a configuration diagram of a lighting package module according to a third embodiment

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

1 is a configuration diagram of a lighting package module according to a first embodiment, Figure 2 is a side view of the lighting package module shown in FIG.

As shown in FIGS. 1 and 2, the lighting package module according to the first embodiment includes a substrate 110, a light source module 120 disposed on an upper surface of the substrate 110, and the light source module 120. A light emitting surface 130 formed on the substrate, an ESD protection device 140 disposed on the substrate 110 outside the light emitting surface 130, and a dome lens formed of silicon on the ESD protection device 140. Lens 150).

First, the substrate 100 may be formed of a metal core PCB (MCPCB). As illustrated in FIG. 1, the substrate 100 has the light emitting surface 130 disposed at a central portion thereof, and soldering pads 111 and (+) electrodes of (+) electrodes at both corners of the diagonal direction. Soldering pads 112 of the electrodes are arranged, respectively.

The light source module 120 is disposed at the center of the emission surface 130, and electrode pads 123 and 124 are disposed at both sides of the light source module 120. In addition, a white dam 131 is formed around the light source module 120 and the electrode pads 123 and 124 in a circular structure.

The light source module 120 is composed of a plurality of COB packages 121, and is electrically connected between the COB packages 121 by wires. Although not shown in FIG. 1, the COB package 121 and the electrode pads 123 and 124 are also electrically connected by wires. In this case, the wire may have a good electrical conductivity, for example, gold (Au), copper (Cu) or an alloy material of gold (Au) and silver (Ag).

The plurality of COB packages 121 may be configured as an LED COB package having a multi-chip structure or an LED COB package having a single chip structure. In addition, the LED COB package having a multi-chip structure and a single chip structure may be mixed. In addition, the COB package may be configured of any one of a vertical type, a horizontal type, and a flip chip structure.

The COB package 121 includes a plurality of light emitting devices, and may be electrically connected to electrode pads in various forms. For example, it may be electrically connected in a flip-bonding manner without wires, die-bonded and electrically connected on (+) and (-) electrodes, or electrically connected through wires. The light emitting device may be a light emitting diode chip emitting red, green, or blue light or a light emitting diode chip emitting UV.

The white dam 131 performs a function of partially reflecting light emitted from the light emitting device. The white dam 131 may be mainly made of a silicon-based material, and may contain TiO 2 to perform a reflection function. In this case, the content of TiO 2 may be determined according to the degree to which the white dam 131 should function as a reflector and the robustness of the white dam 131, and may be 60% by weight. 80% may be contained.

An encapsulant forming the light emitting surface 130 may be filled in the interior surrounded by the white dam 131. In this case, the encapsulant may include at least one phosphor in a translucent resin including silicon.

When the light emitting device is a blue light emitting diode, phosphors included in the translucent resin constituting the light emitting surface 130 may include garnet-based (YAG, TAG), silicate-based, and nitride-based compounds. And an oxynitride system.

On the other hand, natural light (white light) can be realized by including only the yellow-based phosphor in the light-transmissive resin, but may further include a green-based phosphor or a red-based phosphor to improve the color rendering index and reduce the color temperature.

In addition, when various kinds of phosphors are mixed in the light-transmitting resin, the proportion of the phosphor to be added according to the color of the phosphor may be more green-based phosphors than red-based phosphors, and yellow-based phosphors may be used more than green-based phosphors.

The yellow phosphor is a garnet-based YAG, silicate-based, oxynitride-based, the green phosphor is used a silicate-based, oxynitride-based, the red phosphor is used a nitride Can be.

In addition to the various types of phosphors mixed in the light-transmissive resin, a layer having a red phosphor, a layer having a green phosphor, and a layer having a yellow phosphor may be separately divided.

Subsequently, in the illumination package module, positive and negative electrode pads 111 and 112 and an ESD protection element 140 are disposed on the substrate 110 outside the light emitting surface 130. In this case, the (+) and (-) electrode pads 111 and 112 are disposed in one diagonal direction of the substrate 110, and the ESD protection element 140 is disposed in the other diagonal direction of the substrate 110. It is. That is, the ESD protection element 140 is located at a position as far as possible from the (+) and (-) electrode pads 111 and 112 to protect it from the heat generated from the (+) and (-) electrode pads 111 and 112. It is good to place.

The ESD protection device 140 is a device for protecting the light source module 120 from an electrostatic discharge (ESD), and may be formed of a zener diode or a varistor. In the first embodiment (FIG. 1), a Zener diode is shown as the ESD protection element 140 as an example.

The method of forming the Zener diode 140 on the substrate 110 outside the light emitting surface 130 may be formed by using a screen printing process. The zener diode 140 is then electrically connected to the positive and negative electrode pads 141 and 142 using a wire 143.

The illumination package module is disposed on the zener diode 140 and the wire 143 to protect the zener diode 140 and the wire 143 disposed outside the light emitting surface 130. A dome lens 150 is formed of high viscosity silicon. The dome lens 150 may be formed using a dispensing method of a conventional LED package PKG.

Meanwhile, when the ESD protection device 140 is configured as a varistor instead of the zener diode, the varistor may be formed using a surface arrangement process (SMT).

As described above, in the lighting package module according to the first embodiment, the light source area is designed to be small by arranging the position of the zener diode 140 outside the light emitting surface 130 instead of inside the light emitting surface 130. As a result, the size of the lighting product and the volume of the silicon and the phosphor forming the light emitting surface 130 can be reduced, thereby saving material costs.

Second Embodiment

3 is a configuration diagram of a lighting package module according to a second embodiment.

As shown in FIG. 3, the lighting package module according to the second embodiment includes a substrate 110, a light source module 120 disposed on an upper surface of the substrate 110, and a light source module 120 formed on the light source module 120. An emission surface 130, an ESD protection element 140 disposed on the substrate 110 outside the emission surface 130, and a dome lens formed of silicon on the ESD protection element 140 ( 150).

In the second embodiment, positive and negative electrode pads 111 and 112 are disposed in left and right directions outside the light emitting surface 130, and the ESD protection is provided in a lower direction outside the light emitting surface 130. The point where the element 140 is arranged is different from that of the first embodiment (Fig. 1). In this case, the ESD protection element 140 may be disposed in an upward direction outside the light emitting surface 130. That is, the ESD protection element 140 is located at a position as far as possible from the (+) and (-) electrode pads 111 and 112 to protect it from the heat generated from the (+) and (-) electrode pads 111 and 112. It is good to place.

The ESD protection element 140 may be configured as a Zener diode or a varistor as in the first embodiment.

When the zener diode 140 is disposed outside the light emitting surface 130, the zener diode 140 and the wire 143 may be protected to protect the zener diode 140 and the wire 143. The dome lens 150 may be formed of high-viscosity silicon. In this case, the dome lens 150 may be formed using a dispensing method of a conventional LED package (PKG).

As described above, the lighting package module according to the second embodiment may arrange the position of the zener diode 140 outside the light emitting surface 130 instead of inside the light emitting surface 130, thereby designing a small light source area. As a result, the size of the lighting product and the volume of the silicon and the phosphor forming the light emitting surface 130 may be reduced, thereby reducing the material cost.

Third Embodiment

4 is a configuration diagram of a lighting package module according to a third embodiment.

As shown in FIG. 4, the lighting package module according to the third embodiment includes a substrate 110, a light source module 120 disposed on an upper surface of the substrate 110, and a light source module 120 formed on the light source module 120. An emission surface 130, an ESD protection element 140 disposed on the substrate 110 outside the emission surface 130, and a dome lens formed of silicon on the ESD protection element 140 ( 150).

In the third embodiment, positive and negative electrode pads 111 and 112 are disposed in upper and lower directions outside the light emitting surface 130, and the ESD protection is performed in a right direction outside the light emitting surface 130. The point where the element 140 is disposed differs from the first and second embodiments (Figs. 1 and 3). In this case, the ESD protection element 140 may be disposed in a left direction outside the light emitting surface 130. That is, the ESD protection element 140 is located at a position as far as possible from the (+) and (-) electrode pads 111 and 112 to protect it from the heat generated from the (+) and (-) electrode pads 111 and 112. It is good to place.

The ESD protection element 140 may be configured as a Zener diode or a varistor as in the first embodiment.

Like the first and second embodiments, when the zener diode 140 is disposed outside the light emitting surface 130, the zener diode 140 and the wire 143 may be protected to protect the zener diode 140 and the wire 143. A dome lens 150 may be formed of high viscosity silicon on the diode 140 and the wire 143. In this case, the dome lens 150 may be formed using a dispensing method of a conventional LED package (PKG).

Accordingly, the lighting package module according to the third embodiment may be designed to place the zener diode 140 in the light emitting surface 130 outside the light emitting surface 130, rather than the inside of the light emitting surface 130, thereby reducing the light source area. Accordingly, the size of the lighting product and the volume of the silicon and the phosphor forming the light emitting surface 130 can be reduced, thereby reducing the material cost.

The lighting package module and the lighting apparatus using the same according to the embodiment configured as described above are arranged by reducing a light source area by disposing a zener diode or varistor located inside the light emitting surface to the outside of the light emitting surface. Can be solved.

Although the above description has been made with reference to the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains are not illustrated above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

The lighting package module and the lighting device using the same according to the embodiment may be applied to a lighting device, a back light unit (BLU), an LED display device, and the like.

110: substrate (MCPCB) 111: (+) electrode pad
112: (-) electrode pad 120: light source module
121: COB package 123: electrode pad
124: electrode pad 130: emitting surface
131: White DAM 140: Zener Diode
141: electrode pad 142: electrode pad
143: wire
150: Silicon Dome Lens

Claims (14)

Board;
A light source module disposed on the substrate;
A light emitting surface disposed on the light source module;
Electrode pads disposed on the substrate on both outer portions of the light emitting surface; And
An ESD protection element disposed on the substrate outside the light emitting surface and spaced apart from the electrode pad by a predetermined distance;
Lighting package module comprising a.
The method of claim 1,
The ESD protection element is a Zener diode or a varistor.
3. The method of claim 2,
The zener diode is formed using a printing process,
The varistor is a lighting package module formed by using a surface arrangement process (SMT).
The lighting package module of claim 1, wherein the lighting package module comprises:
And a dome lens formed of silicon on the ESD protection device.
The method of claim 4, wherein
The dome lens is a lighting package module formed using a dispensing (Dispensing) method.
The lighting package module of claim 1, wherein the lighting package module comprises:
(+) And (-) electrode pads are positioned in one diagonal direction outside the light emitting surface,
And an ESD protection element positioned in a diagonal direction on the other side outside the light emitting surface.
The lighting package module of claim 1, wherein the lighting package module comprises:
(+) And (-) electrode pads are located at left and right directions outside the light emitting surface,
And an ESD protection device positioned above or below the light emitting surface.
The lighting package module of claim 1, wherein the lighting package module comprises:
(+) And (-) electrode pads are positioned in the upper and lower directions outside the light emitting surface,
And an ESD protection device disposed on a left side or a right side of the light emitting surface outside.
The method of claim 1,
The substrate includes a substrate including a metal (Metal),
The light source module includes a plurality of COB packages,
The COB package is a single chip (chip) or multi-chip (Multi-chip) or a single chip (chip) and a multi-chip (multi-chip) mixed light package module.
The light emitting surface of claim 1, wherein the light emitting surface is:
A circular white dam formed around an outer edge of the light source module; And
An encapsulant formed in the white dam to form the light emitting surface;
Lighting package module comprising a.
11. The method of claim 10,
The white dam is a lighting package module made of a silicon-based material containing TiO 2 .
The method of claim 11,
The TiO 2 is a lighting package module containing 60% to 80% by weight (%).
11. The method of claim 10,
The encapsulant is a lighting package module mixed with silicon and at least one phosphor.
A lighting device comprising the lighting package module according to any one of claims 1 to 13.
KR1020110118878A 2011-11-15 2011-11-15 Illumination package module and lighting device using the same KR20130053223A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4343415A3 (en) * 2015-11-02 2024-06-26 LG Electronics Inc. Display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4343415A3 (en) * 2015-11-02 2024-06-26 LG Electronics Inc. Display device

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