KR20130028181A - Photomask cleaning method - Google Patents

Photomask cleaning method Download PDF

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Publication number
KR20130028181A
KR20130028181A KR1020110080286A KR20110080286A KR20130028181A KR 20130028181 A KR20130028181 A KR 20130028181A KR 1020110080286 A KR1020110080286 A KR 1020110080286A KR 20110080286 A KR20110080286 A KR 20110080286A KR 20130028181 A KR20130028181 A KR 20130028181A
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KR
South Korea
Prior art keywords
photo mask
cleaning
pattern
conductive
chuck
Prior art date
Application number
KR1020110080286A
Other languages
Korean (ko)
Inventor
최기훈
장동혁
강병철
김성수
Original Assignee
세메스 주식회사
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Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020110080286A priority Critical patent/KR20130028181A/en
Publication of KR20130028181A publication Critical patent/KR20130028181A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a photo mask cleaning process. The photo mask cleaning method includes loading a photo mask into a spin chuck having conductive chuck pins; Removing charges accumulated in the pattern of the photo mask; And cleaning the photo mask; In the charge removing step, the conductive treatment liquid is sprayed onto the photo mask rotated at a low speed so that the charge accumulated in the pattern of the photo mask is removed through the conductive chuck pins of the spin chuck through the conductive treatment liquid.

Figure P1020110080286

Description

Photomask cleaning method

The present invention relates to a method for cleaning a photo mask, and more particularly, to a method for cleaning a photo mask made of a non-conductive substrate.

A photomask is a shape of a microcircuit of a semiconductor on a quartz or glass substrate. For example, using a chromium thin film coated on an upper layer of a transparent quartz substrate, a semiconductor integrated circuit and an LCD pattern may be 1 to 5 times the actual size. Etched. The fine pattern of the photomask is formed on the substrate through a photolithography process. In the photolithography process, the photoresist is uniformly coated on a substrate, the pattern on the photomask is reduced and projectedly exposed using an exposure apparatus such as a stepper, and then the development process is performed before the formation of the two-dimensional photoresist pattern. Say the process.

Photomasks are undergoing a cleaning process to remove contamination from various requirements. The photo mask cleaning process is performed in a spin cleaning apparatus.

However, since the photomask is deposited with a metal pattern (chromium pattern), if there is an electrostatic discharge due to the equipment or the surrounding environment during the process, a strong current flows into the internal region and causes great damage such as melting the fine pattern of the photomask. A problem arises.

That is, the photomask easily reaches the internal micropattern area through the conductor such as chromium pattern deposited on the pattern surface by the electrostatic discharge (ESD) generated by the external environment such as an operator or equipment during the process, and generates high heat. It causes damage and breaks the chrome pattern. Therefore, when the wafer is exposed in the state where the photo mask is damaged in this way, a defective pattern is generated, which causes a secondary problem of remanufacturing an expensive mask.

In particular, the charge accumulated on the metal pattern of the photo mask is discharged for a moment when rotated at a high speed in the cleaning process, causing pattern damage. In the apparatus for cleaning the photomask, pattern damage due to static electricity generated in the conductive pattern included in the photomask is rapidly increasing due to the rotation of the photomask.

In order to prevent the pattern damage problem caused by static electricity in such a cleaning device, a fixing pin for supporting the photomask may be made of a conductive material. However, since the photomask is patterned about 1 mm into the quartz (or glass) substrate, the charges accumulated in the metal pattern are difficult to escape to the conductive pins.

[Document 1] Korean Patent Publication No. 10-2010-0023067

The present invention is to solve the above problems, and provides a cleaning method of the photo mask that can remove the electric charge present in the metal pattern of the photo mask.

In addition, the present invention provides a method for cleaning a photomask, which can prevent photomask damage due to static electricity during the cleaning process.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a photo mask cleaning method according to an embodiment of the present invention includes loading a photo mask on a spin chuck having conductive chuck pins; Removing charges accumulated in the pattern of the photo mask; And cleaning the photo mask; In the charge removing step, the conductive treatment liquid is sprayed onto the photo mask rotated at a low speed so that the charge accumulated in the pattern of the photo mask is removed through the conductive chuck pins of the spin chuck through the conductive treatment liquid.

According to an embodiment of the present invention, the conductive treatment liquid is ultrapure water to which carbon dioxide (CO 2) is added.

According to an embodiment of the present invention, the rotation speed of the photo mask in the charge removing step is 200rpm or less.

According to an embodiment of the present invention, the chuck pins are connected to an external ground line through a conductive line inside the spin chuck so that charges charged on the pattern surface of the photo mask are discharged to the outside.

According to the present invention, charges charged on the pattern surface of the photo mask are electrically connected to the chuck pins by the conductive treatment liquid and discharged to the outside, thereby preventing damage to the chromium film and generation of particles during photo mask cleaning.

The drawings described below are for illustrative purposes only and are not intended to limit the scope of the invention.
1 is a view showing a photo mask cleaning equipment according to an embodiment of the present invention.
FIG. 2 shows a one-layer layout of the photo mask cleaning equipment shown in FIG. 1.
FIG. 3 shows a two-layer layout of the photo mask cleaning equipment shown in FIG. 1.
4 is a view showing a state where the photo mask is loaded into the spin chuck for the cleaning process,
FIG. 5 is an enlarged view illustrating main parts of a process in which charge on the pattern surface of the photomask flows to the chuck pins by the conductive treatment liquid.
6 is a flowchart for briefly explaining a photo mask cleaning method.

Hereinafter, with reference to the accompanying drawings will be described in detail a photo mask cleaning equipment equipped with a conveying apparatus according to a preferred embodiment of the present invention. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

(Example)

1 is a block diagram showing a photo mask cleaning equipment according to an embodiment of the present invention. 2 and 3 show layouts of the first and second layers of the photo mask cleaning apparatus shown in FIG. 1.

1 to 3, the photo mask cleaning apparatus 1 includes an index unit 1000, a first processing unit 2000, a second processing unit 3000, and an inversion buffer unit 4000.

The index unit 1000 includes four ports 1100 on which a container containing a photo mask is placed, and an index robot 1200 for transferring the photo mask. The photo mask is placed in the port 1100 in a container with the pattern side turned upside down. Therefore, it is possible to minimize the contamination of the pattern surface of the photo mask. The photo mask is provided after the pattern surface is inverted to face upward in the inversion buffer unit 4000 before being loaded into the first processing unit 2000 or the second processing unit 3000.

The first processing unit 2000 performs wet cleaning of the photo mask. The first processing unit 2000 is connected to the inversion buffer unit 4000 and is disposed along the first transport path 2100 and the first transport path 2100 having the first transport device 2200 for transporting the photo mask. Three glue removal processing modules (HSU, GSU) 2300 and 2400, which are photo mask cleaning modules, and two photo mask cooling units (CPUs) 2500 are included.

The glue removal processing modules (HSU, GSU) apply SPM solution to the entire surface of the photo mask to remove the glue by applying the HSU (2300) to remove the glue and SPM solution partially on the edge of the photo mask. Module (HSU) 2400. The photo mask cooling apparatus 2500 is a cooling apparatus for lowering the temperature of the photo mask heat treated by the ultraviolet / heat processing module 3300 to room temperature.

The second processing unit 3000 is arranged to be partitioned from the first processing unit 2000 in layers. In the second processing unit 3000, the photo mask is dried and washed with functional water. The second processor 3000 is an ultraviolet / heating module (HPU) 3300 disposed along the second transport path 3100 and the second transport path 3100 having the second transport device 3200 for transporting the photo mask. ) And two functional water treatment modules (SCU) 3400.

The inversion buffer unit 4000 is disposed between the first processing unit 2000 and the index unit 1000. Although not shown, the inversion buffer unit 4000 may be disposed between the second processing unit 3000 and the index unit 1000. The inversion buffer unit 4000 inverts the photo mask.

In the photo mask cleaning installation 1 of the present invention, the first layer is composed of modules for wet cleaning, and the second layer is composed of modules for dry cleaning. That is, the wet cleaning using the chemical liquid was arranged in one layer so that the ion contamination by the downflow did not affect the dry-processed photomask. For example, the photo mask cleaning installation 1 of the present invention can be configured such that both the modules for wet cleaning and the modules for dry cleaning are arranged in a single layer.

The photo mask cleaning equipment can process up to five photo masks simultaneously, so high productivity can be expected.

The photo mask is very vulnerable to static electricity because the pattern surface is made of Cr. Therefore, the photo mask cleaning equipment of the present invention has a movement path (first feed path, second feed path, respectively) to minimize damage caused by static electricity. Ionizer (inside the processing module) of the (ionizer) can be installed. In addition, the photomask cleaning equipment of the present invention frequently removes static electricity when cleaning a photomask that is susceptible to static electricity. Description of the static elimination will be described later in detail.

The glue removal processing modules (HSU, GSU) 2300 and 2400 and the functional water treatment module (SCU) 3400 are provided with a rotation processing device having a spin chuck, and the photo mask is cleaned while being loaded on the spin chuck. Is processed. Below, the rotation processing apparatus used for each processing module is outlined.

4 is a view illustrating a state in which a photo mask is loaded into a spin chuck for a cleaning process, and FIG. 5 is an enlarged view illustrating main parts of a process in which charge on the pattern surface of the photo mask flows to the chuck pins by the conductive treatment liquid.

4 to 5, the rotation processing apparatus 5000 includes a container 5100, a spin chuck 5200, a lifting unit 5300, and a first spray nozzle 5400.

The container 5100 has a space 5110 in which an upper portion thereof is opened and a photo mask is processed, and a spin chuck 5200 is disposed in the space 5110. Although not shown, the container 5100 may include a structure capable of separating and recovering the treatment liquids used in the process. This makes it possible to reuse the treatment liquids.

The lifting unit 5300 linearly moves the container 5100 in the vertical direction. As the vessel 5100 moves up and down, the relative height of the vessel 5100 relative to the spin chuck 5200 changes. The elevating unit 5300 has a bracket 5331, a moving shaft 5340, and a driver 5336.

The spin chuck 5200 supports the photo mask during the process and rotates the photo mask. The spin chuck includes a body 5210, a rotation shaft 5220 and chuck pins 5230. A driver 5240 such as a motor providing a rotational force is fixedly coupled to the lower end of the rotation shaft 5220. Body 5210 has a top surface that is provided generally circular when viewed from the top. The chuck pins 5230 are fixedly installed on an upper surface of the body 5210. The lower surface of the body 5210 is fixedly coupled to the rotating shaft 5220 to support and rotate the body. The rotating shaft 5220 has a hollow shape. The rotating shaft 5220 protrudes out of the container 5210 through an opening formed in the bottom surface of the container 5210. The rotating shaft 5220 is fixedly coupled to a driver (not shown), such as a motor for providing a rotational force thereto.

Meanwhile, a back nozzle 5280 is installed at the center of the body 5210. The bag nozzle 5280 protrudes above the body 5210. The bag nozzle 5280 includes a plurality of discharge ports 5302. The discharge ports 5302 spray a plurality of processing fluids. Here, the treating fluid may include ultrapure water containing carbon dioxide, nitrogen gas, SC-1 (standard clean 1), and SPM (hydrogen sulfate peroxide mixture).

The chuck pins 5230 support the photomask so that the photomask is spaced apart from the upper surface of the body 5210 by a predetermined distance. The chuck pins 5230 are installed in the body 5210 so as to protrude upward from the top surface of the body 5210 in the edge region of the body 5210. The chuck pins 5230 may be made of a conductive SiC or Cr6100 material. Four chuck pins 5230 may be provided. The chuck pins 5230 support the edges of the photo mask so that the spin chuck 5200 does not deviate laterally from the edges of the photo mask when the spin chuck 5200 is rotated. The chuck pins 5230 all have the same shape and size. The chuck pins 5230 preferably have a large area for smooth contact with the conductive treatment liquid.

A conductive line 5302 is connected to the chuck pins 5230. The conductive line 5252 is connected to the ground line 5342. The thick dashed line shown in FIG. 4 indicates a path through which the electric charge charged in the photo mask P is discharged through the chuck pins 5230. The conductive line 5232 is made of a wire or conductor connecting the chuck pins 5230 and the rotation shaft 5220. In addition, the ground line 5342 is for discharging charges moved to the rotation shaft 5220 and is connected to the lower end of the rotation shaft 5220 to be grounded, and may be made of a wire or a conductor.

The first spray nozzle 5400 supplies the conductive treatment liquid to the pattern surface PS of the photo mask P placed on the spin chuck 5200. The electrically conductive treatment liquid is ultrapure water (hereinafter referred to as carbon dioxide functional water) to which carbon dioxide (CO2) is added. The conductive treatment liquid may be a functional water having a specific resistance in addition to the carbon dioxide functional water. The carbon dioxide functional water serves as a medium through which the pattern surface PS of the photo mask P and the chuck pins 5230 can be energized. In other words, since the portion of the photo mask P that contacts the chuck pins 5230 is a non-conductive material (glass or quartz), the pattern surface PS and the chuck pins 5230 on the upper surface of the photo mask are not energized. However, when carbon dioxide functional water, which is an electrically conductive treatment liquid, is supplied and flowed to the pattern surface PS of the photo mask, charge accumulated in the pattern surface PS flows to the chuck pins 5230 through the carbon dioxide functional water and is then discharged to the outside. do. As such, in the present invention, the charge generated in the pattern surface PS of the photo mask is discharged to the outside through the carbon dioxide functional water-> chuck pin-> conductive line-> ground line.

Here, the carbon dioxide functional water is used as a rinse treatment liquid in the photo mask cleaning process. Therefore, the carbon dioxide functional water is injected for the rinse treatment such as the treatment liquid removal in addition to the purpose of removing the static electricity of the photo mask during the photo mask cleaning process, and the charge on the photo mask pattern surface is automatically removed every rinse treatment.

Although not shown, the rotation processing apparatus 5000 includes a plurality of jet nozzles in addition to the first jet nozzle 5400. Many jet nozzles spray various processing fluids used for cleaning photo masks. The treatment fluid here includes SPM, Hot DIW, nitrogen gas, SC-1, NH4OH + DIW, O3 + DIW.

6 is a flowchart for briefly explaining a photo mask cleaning method.

4 and 6, the photo mask cleaning method includes a charge removing step S100, a cleaning step S200, and a drying step S300. Photomask P is loaded into spin chuck 5200 with conductive chuck pins 5230. In the charge removing step, the spin chuck 5200 is rotated at a low speed of 200 rpm or less (S110), and carbon dioxide functional water is injected onto the pattern surface of the photomask that is rotated at a low speed (S120). The charge accumulated on the pattern surface of the photo mask is removed to the outside through the chuck pins 5230 of the spin chuck 5200 using the carbon dioxide functional water as a medium.

The photo mask from which the charge is removed is cleaned by various processing liquids (S200). In the cleaning treatment step, the carbon dioxide functional water used in the charge removal step is supplied to the photo mask P for the rinse treatment. Therefore, the photo mask is discharged to the outside through the chuck pins every time the rinse treatment step is performed even in the cleaning step.

The cleaned photo mask is dried through a surface drying process (S300).

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

5000: rotation processing device 5100: container
5200: spin chuck 5300: lifting unit
5400: first spray nozzle

Claims (2)

In the photo mask cleaning method:
Loading a photo mask into a spin chuck having conductive chuck pins;
Removing charges accumulated in the pattern of the photo mask; And
Cleaning the photo mask;
The charge removing step
And a charge accumulated in the pattern of the photo mask by spraying the conductive treatment liquid on the photo mask rotated at a low speed, and is removed through the conductive chuck pins of the spin chuck using the conductive treatment liquid as a medium. The method of claim 1,
The conductive treatment liquid
It is ultrapure water to which carbon dioxide (CO2) was added, The photo mask cleaning method characterized by the above-mentioned.
KR1020110080286A 2011-08-11 2011-08-11 Photomask cleaning method KR20130028181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110080286A KR20130028181A (en) 2011-08-11 2011-08-11 Photomask cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110080286A KR20130028181A (en) 2011-08-11 2011-08-11 Photomask cleaning method

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KR20130028181A true KR20130028181A (en) 2013-03-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107748483A (en) * 2017-11-20 2018-03-02 张家港奇点光电科技有限公司 A kind of cleaning device of multi-functional exposure machine base station
KR20200045161A (en) 2018-10-22 2020-05-04 세메스 주식회사 Guide pin, unit for supporting photo mask with the guide pin, and apparatus for cleaning photo mask with the guide pin
KR20220054016A (en) * 2020-10-23 2022-05-02 세메스 주식회사 Supporting uint and apparatus for treating substrate having the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107748483A (en) * 2017-11-20 2018-03-02 张家港奇点光电科技有限公司 A kind of cleaning device of multi-functional exposure machine base station
KR20200045161A (en) 2018-10-22 2020-05-04 세메스 주식회사 Guide pin, unit for supporting photo mask with the guide pin, and apparatus for cleaning photo mask with the guide pin
US10955758B2 (en) 2018-10-22 2021-03-23 Semes Co., Ltd. Guide pin, photo mask supporting unit including the same, and photo mask cleaning apparatus including the same
KR20220054016A (en) * 2020-10-23 2022-05-02 세메스 주식회사 Supporting uint and apparatus for treating substrate having the same

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