KR20120028567A - Semiconductor light emitting device having a multi-cell array - Google Patents

Semiconductor light emitting device having a multi-cell array Download PDF

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Publication number
KR20120028567A
KR20120028567A KR1020100090493A KR20100090493A KR20120028567A KR 20120028567 A KR20120028567 A KR 20120028567A KR 1020100090493 A KR1020100090493 A KR 1020100090493A KR 20100090493 A KR20100090493 A KR 20100090493A KR 20120028567 A KR20120028567 A KR 20120028567A
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KR
South Korea
Prior art keywords
light emitting
semiconductor layer
conductive semiconductor
emitting cells
common electrode
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KR1020100090493A
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Korean (ko)
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송호영
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삼성엘이디 주식회사
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Priority to KR1020100090493A priority Critical patent/KR20120028567A/en
Publication of KR20120028567A publication Critical patent/KR20120028567A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A semiconductor light emitting device having a multi cell array is provided to improve light extraction efficiency by using a transparent electrode as a common electrode. CONSTITUTION: A plurality of light emitting cells(C) is arranged on a substrate(101). The light emitting cell includes first and second conductive semiconductor layers(102,104) and an active layer. The light emitting cells are respectively electrically connected with first and second metal lines(106b,107b) by a common electrode(105). A first metal line(106b) connects the first conductive semiconductor layer of the light emitting cell to the first conductive semiconductor layer of the other light emitting cell. A second metal line(107b) is overlapped with the first metal line at least in a partial area at a vertical direction to a main surface of the substrate.

Description

Semiconductor light emitting device with multi-cell array {SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A MULTI-CELL ARRAY}

 The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device having a structure in which a plurality of light emitting cells are arranged.

In general, semiconductor light emitting diodes (LEDs) have advantageous advantages as light sources in terms of output, efficiency, and reliability, and thus are actively researched and developed as high power and high efficiency light sources for various lighting devices as well as backlights of display devices. In order to commercialize such LEDs as a light source for lighting, it is necessary to increase the light efficiency and lower the manufacturing cost while providing the desired high level output.

However, in the case of a high output LED using a high rated current, the light efficiency is significantly lowered because the current density is higher compared to a low output LED using a relatively low rated current. Specifically, when the rated current is increased to obtain a high luminous flux from the LED chip of the same area in order to obtain a high output, the light efficiency is lowered due to the increase of the current density, and the light efficiency decrease is accelerated due to the heating of the device. have.

As a solution to this problem, a high output light emitting device for die bonding a plurality of low power LED chips at the package level and then connecting the chip to the chip by wire bonding has been proposed. According to the present method, since a low output LED chip of a relatively small size is used, the current density is lower than that of a high output LED chip of a large size, thereby increasing the overall light efficiency. However, as the number of wire bonding increases, not only the manufacturing cost increases and the complexity of the process increases, but also the defect rate due to the wire opening increases. In addition, when a chip is connected with a wire by wire, it is difficult to implement a complicated parallel or parallel wiring structure, and it is difficult to miniaturize the package by the space consumed by the wire, and the number of chips that can be mounted in a single package is also difficult. There is a limited problem.

One of the objects of the present invention is to improve the light efficiency by improving the current density per unit area, and further, to increase the effective light emitting area while minimizing the light loss emitted to the outside.

In order to solve the above problems, one embodiment of the present invention,

A plurality of light emitting cells arranged on the substrate, each of the first and second conductive semiconductor layers having an active layer formed therebetween and emitting blue light, and a first conductive semiconductor layer of the light emitting cells. A first metal line formed to connect with a first conductivity type semiconductor layer of another light emitting cell, and overlapping the first metal line with at least a portion of the first metal line in a direction perpendicular to a main surface of the substrate; A semiconductor light emitting device includes a second metal line, an insulator formed between the first and second metal lines, a second conductive semiconductor layer of the plurality of light emitting cells, and a common electrode connecting the second metal line. do.

In one embodiment of the present invention, the common electrode may have a light transmitting property.

In contrast, the common electrode may be made of metal to reflect light.

In one embodiment of the present invention, the plurality of light emitting cells may be electrically connected in parallel to each other.

In one embodiment of the present invention, the semiconductor substrate may further include a highly reflective metal layer formed on an upper surface of a substrate corresponding to a region between the plurality of light emitting cells.

In an embodiment of the present disclosure, the first conductivity type semiconductor layer may be integrally formed so that the plurality of light emitting cells may share the first conductivity type semiconductor layer.

In one embodiment of the present invention, it may further include an insulator formed between the common electrode, the first conductivity type semiconductor layer and the active layer.

In an embodiment of the present disclosure, an area where the first and second metal lines overlap may be an area corresponding to the plurality of light emitting cells.

In this case, the plurality of light emitting cells may include a region in which the second conductive semiconductor layer and the active layer are partially removed to expose the first conductive semiconductor layer, and the region where the first and second metal lines overlap. An exposed region of the first conductivity-type semiconductor layer may be a region facing each other among regions corresponding to the plurality of light emitting cells.

When using a semiconductor light emitting device according to an embodiment of the present invention, light extraction efficiency can be improved by overlapping the metal lines for connection between the light emitting cells and using the transparent electrode as a common electrode.

1 is a plan view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view taken along line AA ′ of FIG. 1.
3 is an equivalent circuit diagram illustrating a connection relationship between respective light emitting cells in the semiconductor light emitting device of FIG. 1.
4 is a cross-sectional view schematically illustrating a semiconductor light emitting device according to an embodiment modified from the embodiment of FIG. 1.
FIG. 5 is an enlarged view of a region R in FIG. 4.
6 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a plan view schematically illustrating a semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view taken along line AA ′ of FIG. 1. 3 is an equivalent circuit diagram illustrating a connection relationship of each light emitting cell in the semiconductor light emitting device shown in FIG. 1.

1 and 2, the semiconductor light emitting apparatus 100 according to the present embodiment includes a substrate 101 and a plurality of light emitting cells C arranged on the substrate 101, and each light emitting cell C ) Is electrically connected to each other by the wiring structure, that is, the first and second metal lines 106b and 107b and the common electrode 105. In this case, the term 'light emitting cell' denotes a semiconductor multilayer film portion having an active layer region which is distinguished from other cells. In the present embodiment, ten light emitting cells C are arranged in rows and columns, but the number and arrangement of the light emitting cells C may be variously modified. As an additional component, first and second pad portions 106a and 107a may be formed on the substrate 101 that may be used for application of an external electrical signal. As in the present embodiment, since the current density per unit area can be reduced by separating the light emitting cells C into a single cell having a large area, the light emitting efficiency can be improved accordingly.

As shown in FIG. 2, each light emitting cell includes a first conductivity type semiconductor layer 102, an active layer 103, and a second conductivity type semiconductor layer 104 formed on the substrate 101, and FIG. 3. Electrically connected in parallel to each other as shown in. Such a parallel connection structure may be usefully used as a high power light source under a DC power supply.

The substrate 101 may use a substrate having electrical insulation, whereby the light emitting cells C may be electrically separated. However, even when using a conductive substrate may be used by depositing an insulating film thereon. In this case, the substrate 101 may be a growth substrate for growing a semiconductor single crystal. In consideration of this, a sapphire substrate may be used. Sapphire substrates are hexagonal-Rhombo R3c symmetric crystals with lattice constants in the c-axis and a-axis directions of 13.001 Å and 4.758 각각, respectively, C (0001) plane, A (1120) plane, and R ( 1102) surface and the like. In this case, since the C surface is relatively easy to grow a nitride thin film and stable at high temperature, it is usefully used as a substrate for growing a nitride semiconductor. Of course, according to the form is also possible to use a substrate made of SiC, GaN, ZnO, MgAl 2 O 4, MgO, LiAlO 2 and LiGaO 2 and the like.

The first and second conductivity type semiconductor layers 102 and 104 are nitride semiconductors, that is, Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ It may have a composition of 1), n-type impurities and p-type impurities may be doped. In this case, the first and second conductivity type semiconductor layers 102 and 104 may be formed by a metal organic chemical vapor deposition (MOCVD), a hydraulic vapor phase epitaxy (HVPE), a molecular beam epitaxy (MBE) process, or the like, which are known in the art. Can be grown. The active layer 103 formed between the first and second conductivity type semiconductor layers 102 and 104 emits light having a predetermined energy by recombination of electrons and holes, and the band gap energy is adjusted according to the indium content. It may have a structure in which a plurality of layers of x Ga 1 - x N (0 ≦ x ≦ 1) are stacked. In this case, the active layer 103 may be formed of a multi-quantum well (MQW) structure, for example, an InGaN / GaN structure, in which a quantum barrier layer and a quantum well layer are alternately stacked. Meanwhile, the light emitting cells C including the first and second conductivity-type semiconductor layers 102 and 104 and the active layer 103 are separated from each other at the time of growth or grow the light emitting stacks, and then are separated into individual cell units. It can be obtained by the method.

As described above, the plurality of light emitting cells are electrically connected in parallel to each other. For this purpose, the first conductive semiconductor layer 102 is connected by the first metal line 106b, and the second conductive semiconductor layer ( 104 is connected by a common electrode 105 formed to cover the plurality of light emitting cells. As described above, in the case of the present embodiment, since the wire is not used as the connection structure between the light emitting cells, the possibility of short circuit can be reduced and the ease of the wiring process can be improved. The common electrode 105 may be formed of a material having transparency and electrical conductivity, and may include, for example, a transparent conductive oxide (ITO, ZnO, CIO, etc.), Ni / Au, or the like. By using the common electrode 105 having light transmittance, light extraction efficiency can be improved.

However, the second metal line 107b connected to the second pad part 107a may be used to evenly apply current to the plurality of light emitting cells regardless of the distances from the pad parts 106a and 107a. The second metal line 107b is disposed to overlap at least a portion of the first metal line 106b in a direction perpendicular to the main surface of the substrate 101, and between the first and second metal lines 106b and 107b. Insulators 108 are disposed to prevent electrical shorts. In addition, the insulator 108 is also formed between the common electrode 105, the first conductivity type semiconductor layer 102, and the active layer 103 for the same purpose. In this case, the insulator 108 may use a material known in the art, such as silicon oxide or silicon nitride. The common electrode 105 connects the second conductive semiconductor layer 104 and the second metal line 107b of the plurality of light emitting cells to implement parallel connection. The first and second metal lines 107b may be made of a highly reflective metal such as Ag, Al, Cu, etc. to minimize light loss.

As the first and second metal lines 107a and 107b have overlapping structures, light loss due to light absorption of the first and second metal lines 107a and 107b may also be minimized. In addition, the space for forming the metal lines may be reduced and the area of the light emitting cells may be increased in comparison with the case where the structure is not overlapped. In this case, the overlapping region of the first and second metal lines 107b is a region corresponding to the plurality of light emitting cells, and more specifically, as shown in FIG. 1, a region corresponding to the plurality of light emitting cells. The exposed regions of the first conductive semiconductor layer 102 may be regions facing each other. Here, the exposed region of the first conductive semiconductor layer 102 is a region in which the second conductive semiconductor layer 104 and the active layer 103 are partially removed from the light emitting cell, thereby exposing the first conductive semiconductor layer 102. it means. On the other hand, although not necessarily required in the present invention, as shown in Figure 2, the light emitting cell may have an inclined shape of the side, thereby, can be expected to increase the light emitting surface.

4 is a cross-sectional view schematically illustrating a semiconductor light emitting device according to an embodiment modified from the embodiment of FIG. 1. FIG. 5 is an enlarged view of a region R in FIG. 4. Referring to FIG. 4, in the semiconductor light emitting device 100 ′, unlike the embodiment of FIG. 1, the common electrode 105 ′ is made of metal, thereby reflecting light in a direction in which the substrate 101 is disposed. Other configurations than the difference of the common electrode 105 'may be adopted in the same manner as in the embodiment of FIG. As the metal having high light reflectivity is used as the common electrode 105`, the common electrode 105` may be used as a so-called flip chip structure mounted on a PCB substrate in the direction in which the common electrode 105` is formed, and in this case, the first and second The metal lines 106a and 107a may bring about an improvement in light efficiency by the overlapping structure. On the other hand, as shown in Figure 5, by forming a highly reflective metal layer 108` on the upper surface of the substrate 101 corresponding to the region between the plurality of light emitting cells, the light extraction efficiency can be further improved, such a highly reflective metal layer ( 108 ′) may also be applied to the embodiment of FIG. 1.

6 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 6, the semiconductor light emitting device 200 according to the present embodiment includes a substrate 201 and a plurality of light emitting cells arranged on the substrate 201, and each light emitting cell has a wiring structure, that is, a first structure. And second metal lines 206b and 207b and the common electrode 205. In addition, each light emitting cell includes a first conductive semiconductor layer 202, an active layer 203, and a second conductive semiconductor layer 204 formed on the substrate 201, and are electrically connected in parallel with each other. In the case of the previous embodiment, unlike the first conductive semiconductor layer 202 is separated from each other by light emitting cells, in the present embodiment, the first conductive semiconductor layer 202 is integrally formed so that the plurality of light emitting cells The first conductive semiconductor layer 202 is shared with each other, whereby a plurality of light emitting cells may be connected in parallel. As the first conductive semiconductor layer 202 is integrally formed, like the second metal line 207b, the first metal line 206b may not need to have an extension part connecting each light emitting cell. Therefore, the effect of reducing the portion where light loss occurs by the first metal line 206b can be seen. In this case, although not separately illustrated, the structure in which the first conductivity-type semiconductor layer 202 is integrally formed may be applied to the embodiment of FIG. 4.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

101: substrate 102: second conductive semiconductor layer
103: active layer 104: first conductive semiconductor layer
105 and 105`: common electrodes 106a and 107a: first and second pad portions
106b, 107b: First and second metal lines 108: Insulator
108`: highly reflective metal layer

Claims (9)

Board;
A plurality of light emitting cells arranged on the substrate, each having a first conductive semiconductor layer and an active layer formed therebetween, the active layer emitting blue light;
A first metal line formed to connect the first conductive semiconductor layer of the light emitting cell with the first conductive semiconductor layer of another light emitting cell;
A second metal line formed on the first metal line and overlapping with the first metal line in at least a partial region in a direction perpendicular to a main surface of the substrate;
An insulator formed between the first and second metal lines; And
A common electrode connecting the second conductive semiconductor layer of the plurality of light emitting cells and the second metal line;
Semiconductor light emitting device comprising a.
The method of claim 1,
And the common electrode has a light transmitting property.
The method of claim 1,
The common electrode is made of a metal, the semiconductor light emitting device, characterized in that for reflecting light.
The method of claim 1,
And the plurality of light emitting cells are electrically connected in parallel with each other.
The method of claim 1,
And a highly reflective metal layer formed on an upper surface of the substrate corresponding to the area between the plurality of light emitting cells.
The method of claim 1,
And the first conductive semiconductor layer is integrally formed so that the plurality of light emitting cells share the first conductive semiconductor layer with each other.
The method of claim 1,
And an insulator formed between the common electrode, the first conductivity-type semiconductor layer, and the active layer.
The method of claim 1,
And the region where the first and second metal lines overlap is a region corresponding to the plurality of light emitting cells.
The method of claim 8,
The plurality of light emitting cells may include a region in which the second conductive semiconductor layer and the active layer are partially removed to expose the first conductive semiconductor layer.
And a region in which the first and second metal lines overlap each other is an area in which exposed regions of the first conductive semiconductor layer face each other among regions corresponding to the plurality of light emitting cells.
KR1020100090493A 2010-09-15 2010-09-15 Semiconductor light emitting device having a multi-cell array KR20120028567A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789237A (en) * 2016-04-25 2016-07-20 京东方科技集团股份有限公司 LED display module, LED display device and manufacturing method of LED display module
CN108598104A (en) * 2018-06-25 2018-09-28 广东省半导体产业技术研究院 A kind of micro- LED array of parallel connection and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789237A (en) * 2016-04-25 2016-07-20 京东方科技集团股份有限公司 LED display module, LED display device and manufacturing method of LED display module
CN108598104A (en) * 2018-06-25 2018-09-28 广东省半导体产业技术研究院 A kind of micro- LED array of parallel connection and preparation method thereof

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