KR20110098433A - Paper substrate and the method of manufacturing the same, and semiconductor device and manufacturing method thereof using the same - Google Patents
Paper substrate and the method of manufacturing the same, and semiconductor device and manufacturing method thereof using the same Download PDFInfo
- Publication number
- KR20110098433A KR20110098433A KR1020100018059A KR20100018059A KR20110098433A KR 20110098433 A KR20110098433 A KR 20110098433A KR 1020100018059 A KR1020100018059 A KR 1020100018059A KR 20100018059 A KR20100018059 A KR 20100018059A KR 20110098433 A KR20110098433 A KR 20110098433A
- Authority
- KR
- South Korea
- Prior art keywords
- paper
- metal wiring
- wiring layer
- manufacturing
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 15
- 239000012044 organic layer Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 11
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates generally to substrates used in the manufacture of electronic devices such as electronic devices, semiconductor devices and the like, methods of manufacturing the same, and semiconductor devices manufactured using the substrates described above and methods of manufacturing the same. In the present invention, paper is used as a substrate, and a conductive metal is wired on the paper to form a substrate. At this time, the metal wiring is formed through a vacuum deposition method. Then, other electronic elements are attached or the inorganic or organic layer including the semiconductor layer is laminated on the metal wiring.
Description
BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates generally to substrates used in the manufacture of electronic devices such as electronic devices, semiconductor devices and the like, methods of manufacturing the same, and semiconductor devices manufactured using the substrates described above and methods of manufacturing the same.
In the case of a semiconductor element such as a transistor or a memory, it is manufactured by a method of forming a plurality of wiring layers or inorganic layers on a substrate such as silicon. However, in order to make such a silicon substrate, after growing the silicon to have a certain direction to make an ingot, a complicated process of cutting and mirror-processing it is required, there is a problem that takes a lot of manufacturing time and cost.
Meanwhile, Korean Patent Application Nos. 10-2007-0030811 and 10-2009-0014155 disclose a method of manufacturing an electronic device through a method of forming various wiring layers by using an electrophotography technique on paper, coated paper or plastic. There is a bar.
However, the above-described method is difficult to form nanoscale wiring because the printing is carried out by attaching toner to the drum after charging the drum, and the toner previously adhered to the drum is completely removed when forming another wiring layer. There is a problem in that it is not suitable for manufacturing a precision device such as a semiconductor device because it acts as a contaminant without being removed.
Accordingly, the present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate suitable for the manufacture of an electronic device or a semiconductor device and a method of manufacturing the same using an eco-friendly and inexpensive paper.
Another object of the present invention is to provide a semiconductor device using paper as a substrate and a method of manufacturing the same.
The substrate using the paper according to the first aspect of the present invention for realizing the above object comprises a paper and a metal wiring layer formed on the paper, characterized in that the metal wiring layer is vacuum deposited on the paper.
In addition, the paper is characterized in that the heat treatment in a vacuum or inert gas or nitrogen gas atmosphere.
In addition, an electronic device is attached on the metal wiring layer.
In addition, the method of manufacturing a substrate using paper according to the second aspect of the present invention comprises the steps of preparing a paper, and forming a metal wiring layer made of a conductive metal on the paper through a vacuum deposition method It is done.
In addition, the paper is heat-treated prior to the vacuum deposition in a vacuum or inert gas or nitrogen gas atmosphere.
In addition, the metal wiring layer is formed using a mask.
A semiconductor device using paper according to a third aspect of the present invention includes a paper, a metal wiring layer vacuum deposited on the paper, a semiconductor layer formed on the metal wiring layer, and an inorganic or organic material layer formed on the metal wiring layer. It is characterized in that the configuration.
In addition, the paper is characterized in that the heat treatment in a vacuum or inert gas or nitrogen gas atmosphere.
A method of manufacturing a semiconductor device using paper according to a fourth aspect of the present invention includes the steps of preparing a paper, forming a metal wiring layer made of a conductive metal on the paper through a vacuum deposition method, and a semiconductor above the metal wiring layer. Forming a layer, and forming an inorganic material or an organic material layer on the metal wiring layer.
In addition, the paper is heat-treated prior to the vacuum deposition in a vacuum or inert gas or nitrogen gas atmosphere.
In addition, the metal wiring layer is formed using a mask.
The method may further include coating a moisture resistant film on the outside of the semiconductor device.
According to the present invention having the above-described configuration, it is possible to implement an electronic device or a semiconductor device by forming various inorganic layers and organic material layers on paper or attaching necessary devices on metal wiring. Therefore, it is possible to manufacture an electronic device or a semiconductor device at a very low cost compared to the prior art.
In addition, when the product is disposed of, the material formed on the paper can be easily recovered by removing the moisture resistant coating and then burning the paper or immersing the product in water to remove the paper.
1 is a cross-sectional view showing the structure of a transistor formed by the present invention as an example of a semiconductor device according to the present invention.
2 is a cross-sectional view showing a structure of a memory device formed by the present invention as an example of a semiconductor device according to another embodiment of the present invention.
Hereinafter, embodiments according to the present invention will be described with reference to the drawings. In addition, the embodiments described below show one preferred embodiment of the present invention, and examples of such embodiments are not intended to limit the scope of the present invention. The present invention can be practiced in various ways without departing from the basic concept of the invention.
In the present invention, the term "paper" includes any type of paper made from a main material of the pulp, and the present invention may be used in which a heat-resistant coating material is applied to the paper in addition to the general paper. In addition, in the present invention, the substrate refers to a wiring pattern formed on the substrate.
In this invention, the board | substrate which can be used for manufacture of an electronic device is produced through the method of forming a wiring pattern using a conductive metal in paper. The vacuum deposition method is adopted for formation of the wiring pattern.
First, a mask suitable for the wiring pattern to be formed on paper is prepared. Then, a wiring pattern is formed on the paper by vacuum depositing a conductive metal such as gold (Au), platinum (Pt), or silver (Ag) on the paper using the mask.
At this time, as a method of forming the wiring pattern, a method of applying an insulating material on the unused part after applying the conductive metal on the paper or applying the conductive metal on the paper as a whole or by applying the conductive metal on the paper as a whole is also adopted. can do.
On the other hand, when the metal is vacuum-deposited on the paper, when moisture or air is contained in the tissue of the paper, the paper may be burned by the heat applied during the deposition. Therefore, prior to vacuum deposition, the paper is heat-treated in a vacuum state or inert gas such as argon (Ar), neon (Ne), or nitrogen (N) gas atmosphere to remove moisture or air contained in the paper. .
After the substrate is produced according to the method described above, an element necessary for the wiring pattern on paper is attached using a conductive adhesive or another suitable wiring layer or material layer is laminated, and finally, the entire structure is applied using a moisture resistant resin film or the like. This completes the desired product.
The substrate according to the present invention can be effectively used to make semiconductor devices such as RF ID tags, transistors, memories, sensors, and the like.
Since the substrate according to the present invention is composed of paper, which is an environmentally friendly material, does not cause environmental pollution, and when the device is later destroyed, the paper is burned by applying heat to the product or the product in water for a predetermined time. By immersing and removing the paper, the metal or the like adhered on the paper can be easily recovered.
1 is a cross-sectional view showing the structure of a semiconductor device according to the present invention using paper as a substrate, which shows the structure when a transistor is manufactured as a semiconductor device.
First, the
Subsequently, a metal wiring made of a conductive metal such as gold (Au), platinum (Pt), silver (Ag) or the like is formed on the
Next, an
And finally, the device is completed by covering the entire structure with a moisture resistant film or the like.
In the transistor shown in FIG. 1, when a voltage is applied to the
Fig. 2 is a cross-sectional view showing another structure of the semiconductor device according to the present invention using paper as a substrate, which shows the structure when a ferroelectric memory device is manufactured as a semiconductor device.
Also in FIG. 2, the
On the
The
Subsequently, a
And finally, the device is completed by covering the entire structure with a moisture resistant film or the like.
The structure is a memory device having a 1T (1-Transistor) structure. In the above structure, the
The data "0" or "1" is recognized according to the on / off state of the transistor.
Of course, the memory device formed on the
The present invention has been described above. According to the present invention described above, it is possible to implement an electronic device or a semiconductor device by forming various inorganic layers and organic layers on paper or attaching necessary devices on a metal wiring.
When the product is disposed of, the material formed on the paper can be easily recovered by removing the moisture resistant coating and then burning the paper or immersing the product in water to remove the paper.
In addition, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the technical spirit of the present invention.
1, 21: paper, 2, 22: metal wiring,
4, 24: semiconductor layer, 4, 25: drain electrode,
5, 26: source electrode, 23: ferroelectric layer.
Claims (12)
It comprises a metal wiring layer formed on the paper,
The metal wiring layer is a substrate using a paper, characterized in that the vacuum deposition on the paper.
The paper is a substrate using a paper, characterized in that the heat treatment in a vacuum or inert gas or nitrogen gas atmosphere.
A substrate using paper, wherein an electronic device is attached to the metal wiring layer.
Forming a metal wiring layer made of a conductive metal on the paper by a vacuum deposition method.
A method of manufacturing a substrate using paper, characterized in that the paper is heat-treated in a vacuum state or inert gas or nitrogen gas atmosphere prior to the vacuum deposition.
And said metal wiring layer is formed using a mask.
A metal wiring layer vacuum deposited on the paper,
A semiconductor layer formed on the metal wiring layer;
A semiconductor device using paper, comprising an inorganic material or an organic material layer formed above the metal wiring layer.
The paper is a semiconductor device using a paper, characterized in that the heat treatment in a vacuum or inert gas or nitrogen gas atmosphere.
Forming a metal wiring layer made of a conductive metal on the paper through a vacuum deposition method,
Forming a semiconductor layer on the metal wiring layer;
And forming an inorganic or organic layer on the upper side of the metal wiring layer.
A method of manufacturing a semiconductor device using paper, wherein the paper is heat-treated in a vacuum state or in an inert gas or nitrogen gas atmosphere prior to the vacuum deposition.
And said metal wiring layer is formed using a mask.
A method for manufacturing a semiconductor device using paper, the method comprising the step of coating a moisture resistant film on the outside of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100018059A KR20110098433A (en) | 2010-02-26 | 2010-02-26 | Paper substrate and the method of manufacturing the same, and semiconductor device and manufacturing method thereof using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100018059A KR20110098433A (en) | 2010-02-26 | 2010-02-26 | Paper substrate and the method of manufacturing the same, and semiconductor device and manufacturing method thereof using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110098433A true KR20110098433A (en) | 2011-09-01 |
Family
ID=44951985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100018059A KR20110098433A (en) | 2010-02-26 | 2010-02-26 | Paper substrate and the method of manufacturing the same, and semiconductor device and manufacturing method thereof using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20110098433A (en) |
-
2010
- 2010-02-26 KR KR1020100018059A patent/KR20110098433A/en active Search and Examination
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| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
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| E601 | Decision to refuse application | ||
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| E90F | Notification of reason for final refusal | ||
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