KR20110096126A - Anti-corrosive photoresist-removing agent composition - Google Patents
Anti-corrosive photoresist-removing agent composition Download PDFInfo
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- KR20110096126A KR20110096126A KR1020117014267A KR20117014267A KR20110096126A KR 20110096126 A KR20110096126 A KR 20110096126A KR 1020117014267 A KR1020117014267 A KR 1020117014267A KR 20117014267 A KR20117014267 A KR 20117014267A KR 20110096126 A KR20110096126 A KR 20110096126A
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C217/00—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton
- C07C217/02—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C217/04—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C217/06—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted
- C07C217/08—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted the oxygen atom of the etherified hydroxy group being further bound to an acyclic carbon atom
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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Abstract
By the anticorrosive photoresist releasing agent composition containing the polar organic solvent (A), the organic amine compound (B), and the anticorrosive agent (C) which consists of a combination of an aromatic polyhydroxy compound and a saccharide, about either copper and aluminum Provided is an anticorrosive photoresist releasing agent composition that exhibits an excellent anticorrosive effect in a wide temperature range and in the presence or absence of water.
Description
TECHNICAL FIELD The present invention relates to an anticorrosive photoresist releasing agent composition, and in particular, to provide an anticorrosive photoresist releasing agent composition having excellent anticorrosive effect by containing a specific anticorrosive agent.
Conventionally, various peeling agents have been developed for the purpose of simply peeling off a resist applied on an inorganic substrate.
About these peeling agents, from the viewpoint of manufacturing a highly accurate circuit wiring, when peeling, it is calculated | required that a resist can be peeled off without corroding aluminum, copper, or an inorganic gas used as a metal wiring. In order to satisfy these requirements, the method of adding carbonic acids, such as benzoic acid and acetic acid, chelate compounds, saccharides, such as sorbitol, and polyhydroxy aromatics, such as catechol, as an anticorrosive agent is examined.
By the way, although many aluminum wirings are employ | adopted for a liquid crystal display, with the enlargement of the recent liquid crystal display, adoption of the copper wiring whose resistance value is smaller than aluminum from the viewpoint of cost reduction and the thinning of a television is examined. Therefore, there is a need for a resist releasing agent having an excellent anticorrosive effect not only for aluminum but also for copper. However, the release agent which provided the anticorrosive prescription which can exhibit sufficient anticorrosive effect to both copper and aluminum is not known until now.
Although
Although Patent Document 2 discloses using a sugar (linear polyhydric alcohol) or an aromatic hydroxy compound as a corrosion inhibitor, a peeling liquid composition formed by using an aromatic hydroxy compound and a sugar in combination is not specifically disclosed in Examples. not.
Moreover, although the peeling liquid composition containing a saccharide is disclosed by patent document 3, it does not describe at all about using an aromatic hydroxy compound.
Further, Patent Document 7 relates to a non-aqueous cleaning composition containing a polar organic solvent, an organic hydroxylated amine compound, and the like, and relates to an aryl compound or the like in which two or more hydroxyl groups are directly bonded to a saccharide or an aromatic ring. Although there exists a description, there is no specific disclosure about the release agent composition which uses together an aromatic hydroxy compound and sugar in an Example etc.
This invention is made | formed in order to solve the said subject, The anticorrosive photo which expresses the outstanding anticorrosive effect also in both a copper and aluminum in a wide temperature range and also in presence or absence of water. It is an object to provide a resist release agent composition.
MEANS TO SOLVE THE PROBLEM As a result of earnestly researching in order to achieve the said objective, the present inventors discovered that the said subject can be solved by using the anticorrosive photoresist removing agent composition which used the combination of an aromatic polyhydroxy compound and a sugar as an anticorrosive agent, The present invention has been completed.
That is, the present invention,
1.An anticorrosive photoresist stripper composition containing a polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide,
2. The anticorrosive photoresist releasing agent composition according to the above 1 containing a polar organic solvent (A), an organic amine compound (B), an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide, and water;
3. The anticorrosive photoresist releasing agent composition according to 1 or 2 above, comprising an anticorrosive agent (C) composed of a combination of a polar organic solvent (A), an organic amine compound (B), an aromatic polyhydroxy compound, and a sugar, and water only;
4. The anticorrosive photoresist releasing agent composition according to any one of 1 to 3 above, wherein the polar organic solvent (A) is an amide solvent;
5. The anticorrosive photoresist stripper composition according to any one of 1 to 4 above, wherein the organic amine compound (B) is at least one selected from monoethanolamine, N-methylethanolamine and N, N-dimethylethanolamine.
6. The anticorrosive photoresist releasing agent composition according to any one of 1 to 5, wherein the aromatic polyhydroxy compound is represented by the following General Formula (a),
R m -Ar- (OH) n ... (a)
(Wherein R is an alkyl group or an aryl group, Ar is an aromatic hydrocarbon structure, m is an integer from 0 to 4, n is an integer from 2 to 6)
7. The anticorrosive photoresist removing agent composition according to any one of 1 to 6 above, wherein the saccharide is at least one selected from xylitol, sorbitol, arabitol, mannitol, glucose and galactose.
8. The anticorrosive photoresist releasing agent composition according to any one of 1 to 7, wherein the anticorrosive agent (C) contains an aromatic polyhydroxy compound and a saccharide in a ratio of 9: 1 to 1: 9 by mass, and
9. Any of said 1-8 containing 19-95 mass% of said polar organic solvents (A), 4-80 mass% of said organic amine compounds (B), and 0.001-10 mass% of said anticorrosive agents (C). It is providing the anticorrosive photoresist releasing agent composition described in.
According to the present invention, any of copper and aluminum can be provided with an anticorrosive photoresist releasing agent composition that exhibits excellent anticorrosive effect in both a wide temperature range and in the presence or absence of water.
BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the correlation between each addition amount of water and the copper corrosion rate of the (corrosive) photoresist removing agent composition prepared in Examples 1 and 2 and Comparative Examples 1-3 (Table 2).
FIG. 2: is a figure which shows the correlation between the addition amount of each water and the corrosion rate of aluminum of the (corrosive) photoresist stripper composition prepared in Examples 1 and 2 and Comparative Examples 1-3 (Table 3).
It is a figure which shows the Cu corrosion rate in each temperature of the (corrosive) photoresist peeling agent composition prepared in Example 1, Comparative Examples 3, 4, and 7 (Table 4).
It is a figure which shows the Al corrosion rate in each temperature of the (corrosive) photoresist removing agent composition prepared in Example 1, Comparative Examples 3, 4, and 7 (Table 4).
Best Mode for Carrying Out the Invention [
The anticorrosive photoresist removing agent composition of this invention contains the anticorrosive agent (C) which consists of a combination of a polar organic solvent (A), an organic amine compound (B), and an aromatic polyhydroxy compound and a saccharide.
As said polar organic solvent (A), if an organic amine compound, an aromatic polyhydroxy compound, and a saccharide can be melt | dissolved uniformly, it will not specifically limit, An amide solvent, an ether alcohol solvent, an alcohol solvent, an ester solvent, Dimethyl sulfoxide (DMSO) etc. are mentioned. Specific examples of the amide solvents include N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), and compounds represented by the following general formula (1). In particular, the amide solvent of the following general formula (1) is preferable, and 3-methoxy-N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide are more preferable.
(In formula, R <1> is a C1-C6 linear or branched alkyl group, R <2> and R <3> is respectively independently a C1-C3 linear or branched alkyl group.
As a specific example of the said linear alkyl group, a methyl group, an ethyl group, n-propyl group, n-butyl group, n-heptyl group, and n-hexyl group are mentioned.
Specific examples of the branched alkyl group include isopropyl group, s-butyl group, isobutyl group, t-butyl group, 2-methylbutyl group, 3-methylbutyl group, isopentyl group, 2-ethylpropyl group and neopentyl The group can be mentioned.
Specific examples of the ether alcohol solvents include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether (BDG), and the like.
Specific examples of the ester solvent include γ-butyrolactone, butyl acetate and the like.
Ethylene glycol, propylene glycol, etc. are mentioned as an example of alcohol solvent.
The said polar organic solvent (A) may be used individually by 1 type, and may use 2 or more types together. Among the polar organic solvents (A), amide solvents are preferable, and since they are amphiphilic and have high solubility, 3-methoxy-N, N-dimethylpropionamide and 3-butoxy- N, N-dimethylpropionamide is particularly preferred.
Specific examples of the organic amine compound (B) include primary alkanolamines such as monoethanolamine, monoisopropanolamine, diglycolamine, N-methylethanolamine, N-methylpropanolamine, N-methylbutanolamine, and N-ethyl. Secondary alkanolamines such as ethanolamine and diethanolamine, secondary amines such as diethylamine, N, N-dimethylethanolamine, N-methyl diethanolamine, N-ethyl diethanolamine, and N-propyldi Tertiary alkanolamines, such as ethanolamine and N-butyl diethanolamine, and tertiary amines, such as triethylamine, etc. are mentioned. Among them, ethanolamine-based compounds such as monoethanolamine, N-methylethanolamine and N, N-dimethylethanolamine can be preferably used from the viewpoint of anticorrosive performance. In view of this, N-methylethanolamine which is a secondary alkanolamine and N, N-dimethylethanolamine which is a tertiary alkanolamine are preferable. These organic amine compounds (B) may be used individually by 1 type, and may use 2 or more types together.
The said anticorrosive (C) consists of a combination of an aromatic polyhydroxy compound and a saccharide.
As said aromatic polyhydroxy compound, what is represented by the following general formula (a) is preferable:
R m -Ar- (OH) n ... (a)
(Wherein R is an alkyl group or an aryl group, Ar is an aromatic hydrocarbon structure, m is an integer of 0 to 4, preferably 1 to 2, n is an integer of 2 to 6, preferably 2 to 4) .
In the said general formula (a), R is an alkyl group or an aryl group.
As an alkyl group represented by R in the said General formula (a), a C1-C50 thing is preferable and a C1-C20 thing is more preferable. The alkyl group may be linear, branched or cyclic, and specific examples thereof include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, tert-butyl group, pentyl group and hexyl group. , Cyclohexyl group, heptyl group, octyl group, stearyl group and the like.
As an aryl group represented by R in the said General formula (a), a C6-C50 thing is preferable and a C6-C18 thing is more preferable. As a specific example of an aryl group, a phenyl group, a naphthyl group, anthracenyl group, a pyrenyl group, a chrysenyl group, a biphenyl group, a terphenyl group, etc. are mentioned.
As an aromatic hydrocarbon structure represented by Ar in the said general formula (a), a C6-C50 thing is preferable and a C6-C18 thing is more preferable. As a specific example of an aromatic hydrocarbon structure, the structure of the group mentioned as a specific example of the said aryl group is mentioned.
Specific examples of the aromatic polyhydroxy compound include pyrocatechol, t-butylcatechol, resorcinol, hydroquinone, pyrogallol, 1,2,4-benzenetriol, and the like, and hydroquinone is preferably used. do. These aromatic polyhydroxy compounds may be used individually by 1 type, and may use 2 or more types together.
As a specific example of the said saccharide, xylitol, sorbitol, arabitol, mannitol, glucose, galactose, etc. are mentioned, Xylitol and sorbitol are preferable. These sugars may be used individually by 1 type, and may use 2 or more types together.
In this invention, it is preferable that the content rate of the aromatic polyhydroxy compound and saccharide in an anticorrosive agent (C) exists in the range of 9: 1-1: 9 by mass ratio from a viewpoint of anticorrosive effect, 8 It is more preferable to exist in the range of: 2-5: 5.
The specific composition ratio of the anticorrosive photoresist releasing agent composition of the present invention is not particularly limited and may have a peeling performance that can be used as a releasing agent, and the polar organic solvent (A), organic amine compound (B) and anticorrosive agent (C) It is preferable if it contains 20-98 mass% of said polar organic solvents (A), 1-79 mass% of said organic amine compounds (B), and 0.001-10 mass% of said anticorrosive agents (C) with respect to the total amount of It is more preferable if it contains 50-96 mass% of (A), 3-49 mass% of said organic amine compound (B), and 0.01-5 mass% of said anticorrosive agent (C). Moreover, if the said anticorrosive agent (C) shows an anticorrosive effect even in an extremely small amount, it is preferable to contain 0.001-10 mass%, and it is more preferable if it contains 0.01-5 mass%.
Moreover, the anticorrosive photoresist peeling agent composition of this invention shows favorable anticorrosive property even if it contains the extremely small amount of 0.001-1 mass% of the said anticorrosive agent (C), and also 0.01-0.5 mass%.
The anticorrosive photoresist releasing agent composition of the present invention may further contain water. In general, the presence of water in the photoresist stripping agent tends to reduce the peeling performance and the corrosion of the inorganic gas, but the anticorrosive photoresist stripping agent composition of the present invention exhibits an excellent anticorrosive effect even in the presence or absence of water. .
As water content in the anticorrosive photoresist removing agent composition of this invention, 100 mass parts or less of water are preferable with respect to 100 mass parts of total amounts of the said polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C). And 20 mass parts or less of water are more preferable. On the other hand, from the viewpoint of eliminating the flash point of the anticorrosive photoresist stripper composition and facilitating handling,
By using the anticorrosive photoresist releasing agent composition of the present invention having the effect not only in the absence of water but also in the presence of water, since a uniform anticorrosive effect is expressed over a wide temperature range, temperature control is easy, and There is an advantage in that the optimum temperature can be determined from the viewpoint. When the anticorrosive photoresist stripper composition of the present invention is preferably used at 30 to 90 ° C, more preferably at 40 to 80 ° C, still more preferably at 65 to 80 ° C, the effect of the present invention is more remarkably expressed. .
The anticorrosive photoresist releasing agent composition of the present invention exhibits anticorrosive performance to various inorganic substrates. As the inorganic substrate, semiconductor wiring materials such as silicon, polysilicon, silicon oxide film, aluminum, aluminum alloy, titanium, titanium-tungsten, titanium nitride, tungsten or compound semiconductors such as gallium arsenide, gallium-phosphorus, indium-phosphorus, and also The glass substrate of an LCD, etc. are mentioned, Especially it shows the outstanding anticorrosive ability with respect to metals, such as aluminum, aluminum alloy (Al-Cu), copper, iridium, titanium, silicon, polysilicon, etc.
The anticorrosive photoresist releasing agent composition of the present invention is a photoresist film applied on an inorganic substrate, or a photoresist layer remaining after dry etching, or a photoresist remaining by ashing after dry etching. It can be used when peeling off a photoresist film on an inorganic substrate such as a resist residue, and when such peeling is carried out, heating or ultrasonic wave or the like can be appropriately used as necessary. Moreover, although the method by a spray is the general method of the processing by the anticorrosive photoresist peeling agent composition of this invention, you may use other methods, for example, an immersion method.
Example
Although an Example and a comparative example demonstrate this invention further in detail below, this invention is not limited at all by these.
<Compound Component>
The compounding component used in Examples 1-16 and Comparative Examples 1-10 is shown below.
Polar Organic Solvents (A):
3-methoxy-N, N-dimethylpropionamide
Diethylene glycol monobutyl ether (BDG, Wako Pure Chemical Industries, Ltd. make)
Organic Amine Compound (B):
N-methylethanolamine (N-MeEtAm, manufactured by Wako Pure Chemical Industries, Ltd.)
Monoethanolamine (MEA, Wako Pure Chemical Industries, Ltd. make)
N, N-dimethylethanolamine (DMAE, Wako Pure Chemical Industries, Ltd. make)
Anticorrosive (C):
Aromatic Polyhydroxy Compounds:
Hydroquinone (made by Wako Pure Chemical Industries, Ltd.)
sugars:
Xylitol (manufactured by Sigma-Aldrich)
Sorbitol (manufactured by Jun Seikagaku Co., Ltd.)
Example 1
Based on 86.5 mass% of 3-methoxy-N, N- dimethyl propionamide and 12.5 mass% of N-MeEtAm, 1.0 mass% of anticorrosive agents consisting of 0.5 mass% of hydroquinone and 0.5 mass% of xylitol are added to this, An anticorrosive photoresist removing agent composition was prepared. The compounding ratio is shown in Table 1. Moreover, about the obtained corrosion-resistant photoresist peeling agent composition, the corrosion rate, water concentration dependence, and temperature dependence of copper and aluminum were evaluated in the procedure shown below.
(Evaluation of Corrosion Rate)
Al and Cu were vapor-deposited (about 7000 Pa), respectively, on the glass plate, and two types of test pieces were produced. The anticorrosive photoresist release agent composition obtained above was kept at 60 degreeC, and two types of test pieces were immersed for 33 minutes. After immersion, the test piece was sufficiently washed with isopropyl alcohol, then air-dried and dried, the surface resistance was measured by four probe method, and the corrosion rate was calculated. The evaluation result of the corrosion rate with respect to Cu is shown in Table 2, and the evaluation result of the corrosion rate with respect to Al is shown in Table 3, respectively.
(Evaluation of water concentration dependency)
1-99 mass parts of water were added with respect to 100 mass parts of anticorrosive photoresist removing agent compositions, and the corrosion rate was evaluated like the above. The evaluation result of the corrosion rate with respect to Cu is shown in Table 2, and the evaluation result of the corrosion rate with respect to Al is shown in Table 3, respectively.
(Evaluation of temperature dependency)
About the process temperature of 40 degreeC and 80 degreeC, the corrosion rate was evaluated similarly to the above, respectively. Table 4 shows the evaluation results of the corrosion rate at each temperature.
Example 2
Except having set it as the composition ratio shown in Table 1, the photoresist removing agent composition was prepared like Example 1, and the corrosion rate and water concentration dependence were evaluated. The evaluation result of the corrosion rate with respect to Cu is shown in Table 2, and the evaluation result of the corrosion rate with respect to Al is shown in Table 3, respectively.
Comparative Examples 1 and 2
Except having made into the compounding ratio shown in Table 1, the photoresist removing agent composition was prepared like Example 1, and their corrosion rate and water concentration dependence were evaluated. The evaluation result of the corrosion rate with respect to Cu is shown in Table 2, and the evaluation result of the corrosion rate with respect to Al is shown in Table 3, respectively.
Comparative Example 3
Except having made into the compounding ratio shown in Table 1, the photoresist removing agent composition was prepared like Example 1, and their corrosion rate, water concentration dependence, and temperature dependence were evaluated. The evaluation result of the corrosion rate with respect to Cu is shown in Table 2, the evaluation result of the corrosion rate with respect to Al is shown in Table 3, and the evaluation result of temperature dependency is shown in Table 4, respectively.
Compared with Examples 1 and 2 containing hydroquinone and sugars, Comparative Example 1 containing only these, Comparative Example 2 containing only xylitol, and Comparative Example 3 containing only hydroquinone have a particularly high corrosion rate to copper. . It turns out that the anticorrosive photoresist peeling agent composition obtained in Examples 1 and 2 has the outstanding anticorrosive property also in any of copper and aluminum.
In addition, in Examples 1 and 2, even if water is added to the anticorrosive photoresist stripper composition, excellent anticorrosive property is expressed in a wide water concentration region, whereas in Comparative Examples 1 to 3, especially with the increase of the water concentration, Corrosion rate to copper is significantly higher.
In addition, while the anticorrosive photoresist stripper composition obtained in Example 1 shows anticorrosive property in the wide temperature range of 40 degreeC-80 degreeC, the photoresist stripper composition obtained in Comparative Examples 3, 4, and 7 is a temperature. As a result, the corrosion rate is particularly high for copper.
Examples 3 and 4
Except having set it as the mixing | blending ratio shown in Table 5, it carried out similarly to Example 1, and prepared the anticorrosive photoresist removing agent composition, and evaluated their corrosion rates. The evaluation results are shown in Table 5.
Based on Examples 3 and 4, it examined whether there exists a difference in the anticorrosive effect by anticorrosive agent combination according to the difference of an amine. In Example 3, monoethanolamine was added to 3-methoxy-N, N-dimethylpropionamide, and DMAE which is a tertiary alkanolamine in Example 4 was respectively mix | blended, and the evaluation result of the corrosion rate shown in Table 5 is shown Got it. From this result, it turns out that the effect in combined use of both anticorrosive agents has a larger effect to the system which mix | blended secondary amine or tertiary amine than the primary amine compounding.
Examples 5 to 13
An anticorrosive photoresist removing agent composition was prepared in the same manner as in Example 1 except that the blending ratios shown in Tables 6 and 7 were used. 40 mass parts of water were added with respect to 100 mass parts of obtained anticorrosive photoresist peeling agent compositions, and their corrosion rates were evaluated. The evaluation results are shown in Tables 6 and 7.
Example 14
An anticorrosive photoresist removing agent composition was prepared in the same manner as in Example 1 except that the blending ratio shown in Table 8 was used. 10 mass parts of water were added with respect to 100 mass parts of obtained anticorrosive photoresist removing agent compositions, and the corrosion rate was evaluated. The evaluation results are shown in Table 8.
Comparative Example 4
Except having set it as the compounding ratio shown in Table 8, it carried out similarly to Example 14, and prepared the photoresist stripper composition, and evaluated the corrosion rate and temperature dependence. The evaluation result of a corrosion rate is shown in Table 8, and the evaluation result of temperature dependency is shown in Table 4, respectively.
Comparative Examples 5 and 6
Except having made into the compounding ratio shown in Table 8, the photoresist removing agent composition was prepared like Example 14, and the corrosion rate was evaluated. The evaluation results are shown in Table 8.
Example 15
An anticorrosive photoresist releasing agent composition was prepared in the same manner as in Example 1 except that the mixing ratio shown in Table 9 was used. In addition, the corrosion rate of the obtained anticorrosive photoresist releasing agent composition was evaluated. The evaluation results are shown in Table 9.
Comparative Example 7
Except having set it as the compounding ratio shown in Table 9, it carried out similarly to Example 15, and prepared the photoresist removing agent composition and evaluated the corrosion rate and temperature dependence. The evaluation result of a corrosion rate is shown in Table 9, and the evaluation result of temperature dependency is shown in Table 4, respectively.
Comparative Examples 8 and 9
Except having made into the compounding ratio shown in Table 9, the photoresist removing agent composition was prepared like Example 15, and the corrosion rate was evaluated. The evaluation results are shown in Table 9.
Example 16
An anticorrosive photoresist releasing agent composition was prepared in the same manner as in Example 1 except that sorbitol was used instead of xylitol, and the mixing ratio shown in Table 10 was used, and the corrosion rate thereof was evaluated. The evaluation results are shown in Table 10. In addition, the peeling performance of the anticorrosive photoresist removing agent composition was evaluated in the order shown below.
(Evaluation of peeling performance)
On a sufficiently clean glass substrate, a positive resist composition (manufactured by FUJIFILM Electronics, Inc., HPR204, 8 cps) was applied with a spin coater (750 rpm x 20 s), and baked in an oven under the following conditions.
Firing conditions: 80 ° C × 15 minutes + 130 ° C × 15 minutes + 160 ° C × 15 minutes
This glass substrate was cut to the magnitude | size of about 5x5 mm, and the test piece was obtained.
About 10 ml of anticorrosive photoresist removing agent composition was put into the beaker, and it thermostated at 70 degreeC by the oil bath. The test piece was immersed in this, and after 2 minutes, it took out immediately, fully rinsed with pure water, aired, and dried sufficiently.
As a result of observing the test piece under a scanning electron microscope (SEM), it was confirmed that the resist was completely removed.
Comparative Example 10
Except having set it as the compounding ratio shown in Table 10, it carried out similarly to Example 16, and prepared the photoresist removing agent composition and evaluated the corrosion rate. The results are shown in Table 10.
Examples 1, 5 to 13 and 16, and Comparative Example 10, the anticorrosive photoresist releasing agent composition of the present invention in combination with an aromatic polyhydroxy compound and sugars exhibits sufficient anticorrosive effect even when the total anticorrosive concentration is low concentration. It was confirmed. On the other hand, in the low concentration addition of sorbitol alone (Comparative Example 10), although the anticorrosive effect to aluminum was confirmed, copper corrosion proceeded greatly.
As mentioned above, it was confirmed that the anticorrosive photoresist peeling agent composition of this invention does not have temperature dependence, shows high anticorrosive property at wide temperature, and shows the anticorrosive effect in wide water concentration.
1 and 2, when hydroquinone, xylitol, or sorbitol are used in combination, they have higher anticorrosive properties for both copper and aluminum in the entire area of water addition than the resist stripping agent prescribed with xylitol or hydroquinone alone. It can be seen that. In addition, it can be seen from FIGS. 3 and 4 that the anticorrosive photoresist stripper composition of the present invention has a lower temperature dependency than other anticorrosive formulations and exhibits anticorrosive effects to any of copper and aluminum at any temperature.
As described in detail above, the anticorrosive photoresist releasing agent composition of the present invention exhibits excellent anticorrosive effects for both copper and aluminum, and has a low water concentration dependency and a low temperature dependency, so that the resist is coated on an inorganic substrate. It is useful as a peeling agent of etc.
Claims (9)
An anticorrosive photoresist releasing agent composition containing a polar organic solvent (A), an organic amine compound (B), an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide, and water.
The anticorrosive photoresist stripper composition which consists only of the polar organic solvent (A), the organic amine compound (B), the aromatic polyhydroxy compound, and the sugar (C), and water.
The anticorrosive photoresist release agent composition wherein the polar organic solvent (A) is an amide solvent.
The organic amine compound (B) is at least one selected from monoethanolamine, N-methylethanolamine and N, N-dimethylethanolamine.
An anticorrosive photoresist releasing agent composition wherein the aromatic polyhydroxy compound is represented by the following general formula (a):
R m -Ar- (OH) n ... (a)
(Wherein R is an alkyl group or an aryl group, Ar is an aromatic hydrocarbon structure, m is an integer of 0 to 4, n is an integer of 2 to 6).
The anti-corrosive photoresist releasing agent composition wherein the saccharide is at least one selected from xylitol, sorbitol, arabitol, mannitol, glucose and galactose.
The anticorrosive photoresist releasing agent composition wherein the anticorrosive agent (C) contains an aromatic polyhydroxy compound and a saccharide in a ratio of 9: 1 to 1: 9 by mass ratio.
19-95 mass% of said polar organic solvents (A) and 4-80 mass% of said organic amine compounds (B) with respect to the total amount of the said polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C). And an anticorrosive photoresist releasing agent composition containing 0.001 to 10% by mass of the anticorrosive agent (C).
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| Application Number | Priority Date | Filing Date | Title |
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| JP2008305176 | 2008-11-28 | ||
| JPJP-P-2008-305176 | 2008-11-28 |
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| KR1020117014267A KR20110096126A (en) | 2008-11-28 | 2009-10-22 | Anti-corrosive photoresist-removing agent composition |
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| JP (1) | JP5302334B2 (en) |
| KR (1) | KR20110096126A (en) |
| CN (1) | CN102301282B (en) |
| TW (1) | TWI470380B (en) |
| WO (1) | WO2010061701A1 (en) |
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|---|---|---|---|---|
| KR101089211B1 (en) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | Composition of stripping solution for liquid crystal display process photoresist comprising primary alkanolamine |
| JP5575318B1 (en) * | 2013-09-02 | 2014-08-20 | パナソニック株式会社 | Resist stripper |
| KR20150146285A (en) * | 2014-06-23 | 2015-12-31 | 동우 화인켐 주식회사 | Resist stripper composition and method of stripping resist using the same |
| WO2018088511A1 (en) * | 2016-11-11 | 2018-05-17 | 株式会社カネコ化学 | Remover for cured products of curable resins, swelling agent for cured products of curable resins, and volume reducing agent for cured foams of curable resins |
| KR102511277B1 (en) * | 2017-01-13 | 2023-03-17 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition containing an amide solvent |
| CN111638632B (en) * | 2020-06-24 | 2022-08-05 | 福建省佑达环保材料有限公司 | Photoresist reworking liquid composition for CF procedure |
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| JP2001222118A (en) * | 1999-12-01 | 2001-08-17 | Tokyo Ohka Kogyo Co Ltd | Rinsing solution for photolithography and method for treating substrate with same |
| KR100360985B1 (en) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | Resist stripper composition |
| JP4810764B2 (en) * | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | Resist stripper composition |
| KR100964801B1 (en) * | 2003-06-26 | 2010-06-22 | 동우 화인켐 주식회사 | Photoresist stripper composition, and exfoliation method of a photoresist using it |
| JP4405767B2 (en) * | 2003-08-28 | 2010-01-27 | ソニー株式会社 | Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same |
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- 2009-10-22 CN CN200980155620.XA patent/CN102301282B/en active Active
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| Publication number | Publication date |
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| JP5302334B2 (en) | 2013-10-02 |
| JPWO2010061701A1 (en) | 2012-04-26 |
| WO2010061701A1 (en) | 2010-06-03 |
| TW201035702A (en) | 2010-10-01 |
| CN102301282A (en) | 2011-12-28 |
| TWI470380B (en) | 2015-01-21 |
| CN102301282B (en) | 2014-03-05 |
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