KR20110075841A - 수소 센서 및 그 제조방법 - Google Patents
수소 센서 및 그 제조방법 Download PDFInfo
- Publication number
- KR20110075841A KR20110075841A KR1020090132402A KR20090132402A KR20110075841A KR 20110075841 A KR20110075841 A KR 20110075841A KR 1020090132402 A KR1020090132402 A KR 1020090132402A KR 20090132402 A KR20090132402 A KR 20090132402A KR 20110075841 A KR20110075841 A KR 20110075841A
- Authority
- KR
- South Korea
- Prior art keywords
- hydrogen
- thin film
- tensile force
- hydrogen sensor
- substrate
- Prior art date
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 199
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 199
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims abstract description 119
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 52
- 239000000956 alloy Substances 0.000 claims abstract description 52
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 44
- 150000003624 transition metals Chemical class 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 46
- 229910052763 palladium Inorganic materials 0.000 claims description 31
- 239000013013 elastic material Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229920001971 elastomer Polymers 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000005060 rubber Substances 0.000 claims description 7
- 229920003051 synthetic elastomer Polymers 0.000 claims description 6
- 239000005061 synthetic rubber Substances 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims description 4
- 244000043261 Hevea brasiliensis Species 0.000 claims description 3
- 229910021069 Pd—Co Inorganic materials 0.000 claims description 3
- 229910021065 Pd—Fe Inorganic materials 0.000 claims description 3
- 229910018885 Pt—Au Inorganic materials 0.000 claims description 3
- 229910018879 Pt—Pd Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229920003052 natural elastomer Polymers 0.000 claims description 3
- 229920001194 natural rubber Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 229920001059 synthetic polymer Polymers 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229920000459 Nitrile rubber Polymers 0.000 claims description 2
- 239000005062 Polybutadiene Substances 0.000 claims description 2
- 229920003049 isoprene rubber Polymers 0.000 claims description 2
- 229920001084 poly(chloroprene) Polymers 0.000 claims description 2
- 229920002857 polybutadiene Polymers 0.000 claims description 2
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 abstract description 110
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 101
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 103
- 230000008859 change Effects 0.000 description 31
- 238000001514 detection method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 239000002070 nanowire Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- -1 MISFETs Substances 0.000 description 2
- 229910002845 Pt–Ni Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007084 catalytic combustion reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000000549 coloured material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/005—H2
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Nanotechnology (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
Claims (18)
- 전이금속 또는 그 합금 박막을 탄성 기판의 표면에 배치하는 단계; 및상기 탄성 기판에 인장력을 작용시켜 상기 탄성 기판 표면에 배치된 상기 박막에 나노 갭을 형성하는 단계; 를 포함하되,상기 인장력의 인가 시에, 상기 박막은 인장력이 작용한 방향으로 인장되는 동시에, 인장력이 작용한 방향의 수직 방향으로 압축하고,상기 인장력의 회수 시에, 상기 박막은 인장력이 회수된 방향으로 다시 압축되는 동시에, 인장력이 회수된 방향의 수직방향으로 다시 인장하는 것에 의해 상기 나노 갭을 형성하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서, 상기 전이금속은 Pd, Pt, Ni, Ag, Ti, Fe, Zn, Co, Mn, Au, W, In, Al중 1선택된 1종이상인 것을 특징으로 하는 수소센서의 제조방법.
- 제1항에 있어서, 상기 합금은 Pd-Ni, Pt-Pd, Pd-Ag, Pd- Ti, Pd-Fe, Pd-Zn, Pd-Co, Pd-Mn, Pd-Au, Pd-W, Pt-Ni, Pt-Ag, Pt-Ag, Pt-Ti, Fe-Pt, Pt-Zn, Pt-Co, Pt-Mn, Pt-Au, Pt-W중 선택된 1종이상인 것을 특징으로 하는 수소센서의 제조방법.
- 제 1항에 있어서, 상기 전이금속은 Pd이며, 상기 합금은 Pd합금인 것을 특징으로 하는 수소센서의 제조방법.
- 제1항에 있어서,상기 기판은 0.3 내지 0.7의 프와송 비(poisson's ratio)를 갖는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 인장력은 상기 탄성 기판에 1.05내지 1.50배로 신장되도록 인가되는 것을 특징으로 하는 수소 센서의 제조방법
- 제1항에 있어서,상기 탄성 소재는 천연고무, 합성고무, 또는 폴리머를 이용하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제7항에 있어서,상기 합성고무는 부타디엔계 고무, 이소프렌계 고무, 클로로프렌계 고무, 니트릴계 고무, 폴리우레탄계 고무, 및 실리콘계 고무로 이루어진 군에서 선택된 어느 하나인 것을 특징으로 하는 수소 센서의 제조방법.
- 제8항에 있어서,상기 실리콘계 고무는 PDMS(polydimethylsiloane)인 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 인장력은 상기 탄성 기판에 1 회 이상 반복 작용하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 인장력은 상기 탄성 기판에 1 방향 이상으로 작용하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제11항에 있어서,상기 인장력은 제 1 방향, 상기 제 1 방향과 수직을 이루는 제 2 방향, 그리고 상기 제 1 방향 및 상기 제 2 방향과는 다른 방향을 이루는 제 3방향으로 반복 인가되는 것을 특징으로 하는 수소 센서의 제조 방법.
- 제 1항에 있어서, 상기 전이금속 또는 그 합금 박막의 두께가 1㎚ 내지 100㎛의 범위를 만족하는 것을 특징으로 하는 수소 센서 제조방법.
- 제1항에 있어서,상기 탄성 기판은 0.1 내지 2m의 너비, 0.1 내지 2m의 길이, 및 0.15 내지 1.5m의 두께를 갖는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 나노 갭이 형성된 상기 전이금속 또는 그 합금 박막을 열처리하는 단계를 더 포함하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 나노 갭이 형성된 상기 전이금속 또는 그 합금 박막을 이온 밀링하는 단계를 더 포함하는 것을 특징으로 하는 수소 센서의 제조방법.
- 제1항에 있어서,상기 형성된 나노 갭은 1㎚ 내지 10㎛의 폭을 가짐을 특징으로 하는 수소 센서의 제조방법.
- 탄성 소재로 이루어진 기판;제1항 내지 제17항 중 어느 한 방법에 의해 다수개의 나노 갭이 형성된 전이금속 또는 그 합금 박막; 및상기 박막의 양단에 형성된 전극;을 포함하는 것을 특징으로 하는 수소 센서.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090132402A KR101067557B1 (ko) | 2009-12-29 | 2009-12-29 | 수소 센서 및 그 제조방법 |
PCT/KR2010/000705 WO2011081245A1 (ko) | 2009-12-29 | 2010-02-05 | 수소 센서 및 그 제조방법 |
JP2011547833A JP5145463B2 (ja) | 2009-12-29 | 2010-12-03 | 水素センサー及びその製造方法 |
EP10813060.0A EP2520928B1 (en) | 2009-12-29 | 2010-12-03 | Method for manufacturing a hydrogen sensor |
PCT/KR2010/008618 WO2011081308A2 (ko) | 2009-12-29 | 2010-12-03 | 수소 센서 및 그 제조 방법 |
US13/059,882 US8468872B2 (en) | 2009-12-29 | 2010-12-03 | Hydrogen sensor and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090132402A KR101067557B1 (ko) | 2009-12-29 | 2009-12-29 | 수소 센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110075841A true KR20110075841A (ko) | 2011-07-06 |
KR101067557B1 KR101067557B1 (ko) | 2011-09-27 |
Family
ID=44226641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090132402A KR101067557B1 (ko) | 2009-12-29 | 2009-12-29 | 수소 센서 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101067557B1 (ko) |
WO (1) | WO2011081245A1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101358245B1 (ko) * | 2012-03-19 | 2014-02-07 | 연세대학교 산학협력단 | 수소 센서 및 수소 센서 제조 방법 |
KR101431625B1 (ko) * | 2013-05-10 | 2014-08-22 | 연세대학교 산학협력단 | 위험물질 감지센서 및 제조방법, 그리고 이를 이용한 실시간 위험물질 경보장치 |
KR101445590B1 (ko) * | 2012-05-08 | 2014-10-02 | 연세대학교 산학협력단 | 수소 센서 및 수소 센서 제조방법 |
US10203313B2 (en) | 2014-02-18 | 2019-02-12 | Industry-Academic Cooperation Foundation, Yonsei University | Hydrogen sensor and sensor circuit |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101990675B1 (ko) | 2017-03-22 | 2019-10-01 | 한양대학교 에리카산학협력단 | 가스 센서 및 그 제조 방법 |
KR20230060124A (ko) | 2021-10-27 | 2023-05-04 | 현대자동차주식회사 | 수소 센서 및 수소 센서 제조방법 |
CN114414485B (zh) * | 2022-01-19 | 2023-12-05 | 浙江树人学院(浙江树人大学) | 一种基于弹性光纤的氢气探测器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849911B2 (en) * | 2002-08-30 | 2005-02-01 | Nano-Proprietary, Inc. | Formation of metal nanowires for use as variable-range hydrogen sensors |
KR20060111296A (ko) * | 2005-04-22 | 2006-10-27 | 엘지전자 주식회사 | 수소 센서 및 그 제조 방법 |
KR100849384B1 (ko) | 2005-10-21 | 2008-07-31 | 한국생명공학연구원 | 나노갭 및 나노갭 센서의 제조방법 |
KR100757389B1 (ko) * | 2005-12-06 | 2007-09-11 | 한국전자통신연구원 | 나노갭 전극을 갖는 센서 및 그 제조 방법 |
KR100900904B1 (ko) * | 2007-08-31 | 2009-06-03 | 연세대학교 산학협력단 | 팔라듐-니켈 합금 박막을 이용한 수소 센서 제조 방법 및상기 방법을 이용하여 제조되는 수소 센서 |
-
2009
- 2009-12-29 KR KR1020090132402A patent/KR101067557B1/ko active IP Right Grant
-
2010
- 2010-02-05 WO PCT/KR2010/000705 patent/WO2011081245A1/ko active Application Filing
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101358245B1 (ko) * | 2012-03-19 | 2014-02-07 | 연세대학교 산학협력단 | 수소 센서 및 수소 센서 제조 방법 |
US9442099B2 (en) | 2012-03-19 | 2016-09-13 | Industry-Academic Cooperation Foundation, Yonsei University | Hydrogen sensor and method of manufacturing the same |
KR101445590B1 (ko) * | 2012-05-08 | 2014-10-02 | 연세대학교 산학협력단 | 수소 센서 및 수소 센서 제조방법 |
KR101431625B1 (ko) * | 2013-05-10 | 2014-08-22 | 연세대학교 산학협력단 | 위험물질 감지센서 및 제조방법, 그리고 이를 이용한 실시간 위험물질 경보장치 |
US10203313B2 (en) | 2014-02-18 | 2019-02-12 | Industry-Academic Cooperation Foundation, Yonsei University | Hydrogen sensor and sensor circuit |
Also Published As
Publication number | Publication date |
---|---|
WO2011081245A1 (ko) | 2011-07-07 |
KR101067557B1 (ko) | 2011-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8468872B2 (en) | Hydrogen sensor and method of manufacturing the same | |
KR101067557B1 (ko) | 수소 센서 및 그 제조방법 | |
Tang et al. | A fully integrated wireless flexible ammonia sensor fabricated by soft nano-lithography | |
KR101445590B1 (ko) | 수소 센서 및 수소 센서 제조방법 | |
Pandey et al. | Pd-doped reduced graphene oxide sensing films for H2 detection | |
Wei et al. | A novel SnO2 gas sensor doped with carbon nanotubes operating at room temperature | |
Wang et al. | Fabrication of a SnO2 nanowire gas sensor and sensor performance for hydrogen | |
Kim et al. | Self-activated transparent all-graphene gas sensor with endurance to humidity and mechanical bending | |
KR101358245B1 (ko) | 수소 센서 및 수소 센서 제조 방법 | |
US10247689B2 (en) | Low concentration ammonia nanosensor | |
Moon et al. | All villi-like metal oxide nanostructures-based chemiresistive electronic nose for an exhaled breath analyzer | |
Moon et al. | A stretchable, room-temperature operable, chemiresistive gas sensor using nanohybrids of reduced graphene oxide and zinc oxide nanorods | |
Peng et al. | Highly sensitive and selective room-temperature nitrogen dioxide sensors based on porous graphene | |
KR101151662B1 (ko) | 수소 센서 및 그 제조방법 | |
Choi et al. | Batch-fabricated CO gas sensor in large-area (8-inch) with sub-10 mW power operation | |
KR101130084B1 (ko) | 수소 센서 및 그 제조방법 | |
RU2745636C1 (ru) | Газовый сенсор и газоаналитический мультисенсорный чип на основе графена, функционализированного карбонильными группами | |
KR101602843B1 (ko) | 유연소재 히터를 포함하는 그래핀 가스센서 | |
Miao et al. | Precise preparation of α-Fe2O3/SnO2 core-shell nanowires via atomic layer deposition for selective MEMS-based H2S gas sensor | |
Misra et al. | Study of activation energy and humidity sensing application of nanostructured Cu-doped ZnO thin films | |
Choi et al. | Tin oxide nanosheets on microelectromechanical system devices for improved gas discrimination | |
KR101499511B1 (ko) | 수소 센서 및 그 제조 방법 | |
Gamboa et al. | Resistive hydrogen sensors based on carbon nanotubes: A review | |
Kim et al. | Highly sensitive cantilever type chemo-mechanical hydrogen sensor based on contact resistance of self-adjusted carbon nanotube arrays | |
Deng et al. | Sensing devices of semiconducting metal oxides gas sensors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150629 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160919 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170913 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180917 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20191205 Year of fee payment: 9 |