KR20110074500A - Method of arranging nanovire on substrate - Google Patents

Method of arranging nanovire on substrate Download PDF

Info

Publication number
KR20110074500A
KR20110074500A KR1020110054438A KR20110054438A KR20110074500A KR 20110074500 A KR20110074500 A KR 20110074500A KR 1020110054438 A KR1020110054438 A KR 1020110054438A KR 20110054438 A KR20110054438 A KR 20110054438A KR 20110074500 A KR20110074500 A KR 20110074500A
Authority
KR
South Korea
Prior art keywords
substrate
nanowires
arranging
nanowire
array
Prior art date
Application number
KR1020110054438A
Other languages
Korean (ko)
Inventor
손광수
Original Assignee
손광수
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 손광수 filed Critical 손광수
Priority to KR1020110054438A priority Critical patent/KR20110074500A/en
Publication of KR20110074500A publication Critical patent/KR20110074500A/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0061—Methods for manipulating nanostructures
    • B82B3/0071—Sorting nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Abstract

PURPOSE: A nanowire arraying method is provided to arrange the nanowire at a desired direction with a uniform density by applying a physical force to the nanowire with controlled location and density. CONSTITUTION: The nanowire arraying method includes following steps.(a) The nano wire in which a location and a density are controlled on a substrate is prepared.(b) The physical force is applied to the nano wire. The step(a) includes following steps.(a1) A metallic catalyst pattern is formed on the top of the substrate.(a2) The nano wire is grown up from the metallic catalyst pattern. The step(b) includes following steps.(b1) A substrate for arrangement is prepared.(b2) The substrate 'provided with the nanowire contacts with the substrate for arrangement.(b3) The substrate for arrangement 'contacted with the substrate' is moved at a one-direction.

Description

Method of arranging nanovire on substrate

The present application relates generally to a method of arranging nanowires, and more particularly, to a method of arranging nanowires on a substrate.

Nanowires are materials with so-called one-dimensional structures ranging from a few nanometers in diameter to tens of nanometers in length and several microns in length. Nanowire is one of the ten technologies that will change the world, commonly referred to as nanosurfaces, nanotubes, nanorods and nanospheres. These nanowires exhibit unique characteristics that differ from those of conventional thin films or bulks in electrical, optical, physical, and properties. Research into applications using solar cells, channels of transistors, sensors, semiconductor devices, and the like has been conducted.

However, despite these outstanding characteristics, it is still not commercially available. This is because, unlike other thin films and bulks, there is a shortage of alignment techniques to date to suit the nanowires as desired. To overcome this, many researchers are working on related research. Typically, contact printing, flow channel, bubble film, LB, rolling, and the like are known as methods for arranging nanowires. Among them, the rolling method is a method of selectively growing nanowires and then pushing them with a roller to print and arrange on a desired substrate. Specifically, the paper by Yerushalmi et al. Applied Physics Letters 91, 203104 (2007) discloses a method of arranging nanowires by a printing method using a roller. However, there is a problem in that the nanowires are used as they are, and the nanowires cannot be manipulated on a substrate to have various arrangements.

The technical problem to be achieved by the present invention is to provide a method for arranging nanowires with a uniform density in a desired direction.

Another technical object of the present invention is to provide a method for arranging nanowires in various directions.

In order to achieve the above technical problem, a method of arranging nanowires according to an aspect of the present application is provided. In the method of arranging the nanowires, a nanowire having a controlled position and density is first provided on a substrate. A physical force is applied to the nanowires provided on the substrate.

Provided is a method of arranging nanowires on a substrate according to another aspect of the present application for achieving the above technical problem. In the method of arranging nanowires on the substrate, first, a nanowire having a controlled position and density is provided on a first surface of the first transparent substrate. A physical force is applied to the nanowires provided on the first surface of the first transparent substrate to arrange the nanowires on the first surface of the first transparent substrate. A second substrate is provided. Aligning the translucent first substrate on a first side of the second substrate. The first surface of the light transmissive first substrate and the first surface of the second substrate are bonded to each other. The nanowires arranged on the first surface of the translucent first substrate are moved to the first surface of the second substrate.

Provided is a method of arranging nanowires on a substrate according to another aspect of the present application for achieving the above technical problem. In the method of arranging nanowires on the substrate, nanowires whose position and density are controlled on the first surface of the first substrate are first formed by the VLS method using a metal catalyst. The nanowires are arranged on the first surface of the first substrate by applying a physical force to the nanowires formed on the first surface of the first substrate. A light transmissive second substrate is provided. The nanowires arranged on the first side of the first substrate are moved to the first side of the transparent second substrate. A third substrate is provided. The nanowires moved to the first surface of the second transparent substrate are moved to the third substrate.

According to one embodiment of the present application, nanowires may be arranged on a substrate while controlling position and density.

According to another embodiment of the present application, the nanowires disposed on the light transmissive substrate may be arranged on the other substrate at a desired position in a desired direction. Therefore, it can be applied as a component in various electronic devices that require precise arrangement of nanowires.

1 is a flowchart schematically showing a nanowire array method according to an embodiment of the present application.
2 to 10 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application.
11 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application.
12 to 19 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application.
20 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to another embodiment of the present application.
21 to 26 are diagrams illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application.
27 to 30 schematically illustrate an application of the method of arranging nanowires on a substrate according to an embodiment of the present application.

Embodiments of the present application will now be described in more detail with reference to the accompanying drawings. However, the techniques disclosed in this application are not limited to the embodiments described herein but may be embodied in other forms. It should be understood, however, that the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the widths or thicknesses of the layers (or layers) and regions are enlarged more than they are in order to clearly express the various layers (or layers) and regions. When described in the drawings as a whole, at the observer's point of view, if one element is referred to as being attached onto another element or substrate, it may be that one element is attached directly onto another element or substrate or an additional element may be interposed between them. It includes everything that it is. In addition, one of ordinary skill in the art may implement the spirit of the present application in various other forms without departing from the technical spirit of the present application. And, like numerals in the drawings refer to like elements.

When the term first or second side of the substrate is used herein, the surface of the substrate on which the nanowires are disposed is defined as the first side. The side opposite to the first side of the substrate on which the nanowires are placed is defined as the second side.

1 is a flowchart schematically showing a nanowire array method according to an embodiment of the present application. Referring to FIG. 1, first, at 110 blocks, a nanowire with controlled position and density is provided on a substrate. The substrate may be, for example, a silicon substrate, an SOI substrate, a sapphire substrate, a quartz substrate, a glass substrate, or the like, but is not limited thereto. The nanowires may include nanotubes, nanorods, nanospheres, nanorods, and the like. In one embodiment, the method for providing the nanowires includes forming a metal catalyst pattern on the substrate and growing a nanowire from the metal catalyst pattern. The process of forming the metal catalyst pattern on the substrate first applies a polymer on the substrate. The polymer is patterned to form a contact pattern of the polymer. A metal layer is deposited on the substrate including the contact pattern. The metal catalyst pattern may be formed by lifting off the polymer. According to one embodiment, the polymer may be a photosensitive polymer. The photosensitive polymer may be, for example, a positive photoresist or a negative photoresist. The patterning process of the photosensitive polymer may include a lithography process and an etching process using a photomask. In another embodiment, the polymer may be a resist for electron beams. In this case, the patterning process of the polymer may be a pattern forming process using an electron beam.

The process of growing the nanowires from the metal catalyst pattern may be performed by, for example, the VLS method. The VLS method is a known method commonly known as a vapor-liquid-solid method. That is, the VLS method prepares catalyst particles and provides the catalyst particles with vapor in the vapor phase of a substance to be grown into nanowires. The vapor is allowed to dissolve in the catalyst particles to convert to a liquid state. When the vapor exceeds the dissolution limit in the liquid alloyed with the catalyst particles, it is precipitated to grow into nanowires.

At 120 blocks, a physical force is applied against the nanowires provided on the substrate. According to an embodiment, in the process of applying the physical force, a method of flowing a gas in a predetermined direction and contacting the flowing gas and the nanowire with respect to the nanowire provided on the substrate may be applied. The gas may be an inert gas, and may be, for example, nitrogen or argon gas. According to another embodiment, in the process of applying the physical force, first, an array substrate is prepared. The substrate provided with the nanowires is brought into contact with the array substrate. The array substrate is moved in a predetermined direction in contact with the substrate. In another embodiment, the applying of the physical force coats a lubricant on the substrate provided with the nanowires. Prepare an array substrate. The substrate coated with the lubricant is brought into contact with the array substrate. The array substrate is moved in a predetermined direction in contact with the substrate. By applying a physical force through the above-described method, the nanowires can be arranged on the substrate based on the direction of the flowing gas or based on the moving direction of the array substrate.

Hereinafter, a method of arranging nanowires according to an embodiment described above with reference to FIG. 1 will be described in more detail with reference to the accompanying drawings.

2 to 10 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application. First, referring to FIG. 1, a polymer 220 is coated on a substrate 210. The substrate 210 may be, for example, a silicon substrate, an SOI substrate, a sapphire substrate, a quartz substrate, a glass substrate, or the like, but is not limited thereto. The polymer 220 may be, for example, a photosensitive polymer. The photosensitive polymer may be, for example, a positive photoresist or a negative photoresist. As another example, the polymer 220 may be a resist for an electron beam.

In another embodiment, an insulator film 230 may be formed on the substrate 210. The insulator film 230 may include an oxide or a nitride. For example, when the substrate 210 is a silicon substrate, the insulator film 230 may be a silicon oxide film. The polymer 220 may be applied on the insulator film 230. The coating method of the polymer 220 may be a known coating method.

Referring to FIG. 3, the polymer 220 is patterned to form a polymer contact pattern 330. In one embodiment, the method of forming the polymer contact pattern 330 may be a lithography and etching process using a mask when the polymer 220 is a photocurable polymer. In another embodiment, the method of forming the polymer contact pattern 330 may use electron beam lithography when the polymer 220 is an electron beam resist. The polymer contact pattern 330 partially etches the polymer 220 to expose the underlying layer. Therefore, when the insulator film 230 exists on the substrate 210, the insulator film 230 is partially exposed, and when the insulator film 230 does not exist on the substrate 210, the substrate 210 is exposed. Partially expose A metal catalyst pattern is formed in the polymer contact pattern 330 as described below, and nanowires are grown from the metal catalyst pattern. Therefore, the polymer contact pattern 330 may control density and size in consideration of density, position, diameter, number, etc. of nanowires to be grown later.

Referring to FIG. 4, a metal layer 440 is deposited on the substrate 210 on which the polymer contact pattern 330 is formed. The metal layer 440 may be, for example, gold, but is not limited thereto, and a known metal which may be used as a metal catalyst may be applied. As a method of depositing the metal layer 440, a vapor deposition method such as vapor deposition, evaporation, sputtering, or wet deposition such as dip coating, spin coating, or electroplating may be applied. The metal layer 440 is deposited inside the polymer contact pattern 330 and over the polymer 220.

Referring to FIG. 5, the polymer 220 on which the polymer contact pattern 330 is formed is removed from the substrate 210. According to one embodiment, by applying a lift-off process to remove the polymer 220, the metal layer 440 deposited on the polymer 220 is also removed. As a result, a portion of the metal layer 440 existing in the polymer contact pattern 330 remains, so that the metal catalyst pattern 550 is formed on the substrate 210 as shown in FIG. 5. The metal catalyst pattern 550 may be, for example, a gold thin film pattern, and functions as a catalyst pattern applied to the VLS method described below. When the insulator film 230 is formed on the substrate 210, the metal catalyst pattern 550 may be formed on the insulator film 230. In the process of removing the polymer 220, a solution capable of etching the polymer 220 may be applied. For example, a well-known acetone or remover PG may be used.

Referring to FIG. 6, the nanowires 660 are grown from the metal catalyst pattern 550. The nanowire 660 is, for example, a semiconductor such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), oxides such as zinc oxide (ZnO), titanium oxide (TiO 2), or silicon carbide (SiC). And the like, but are not limited thereto and may include various materials. According to one embodiment, the method of growing the nanowire 660 may be applied to the VLS method. The VLS method provides a vapor of a material to be grown into the nanowire 660 to the metal catalyst pattern 550 and when the concentration limit of the vapor dissolved in the metal catalyst pattern 550 is exceeded, the metal catalyst pattern ( Nanowire 660 grows from 550. According to one embodiment, the size and density of the metal catalyst pattern 550 is controlled in advance so that the growing nanowires 660 may be grown at predetermined intervals from each other. In some embodiments, the nanowires 660 may be grown from at least one metal catalyst pattern 550. As an example, as shown, the nanowires 660 may grow one by one from the metal catalyst pattern 550.

FIG. 7 is a diagram illustrating a method of applying a physical force to the nanowire 660 provided on the substrate 210 according to one embodiment of the present application. According to one embodiment, the process of applying the physical force flows the gas 770 in a predetermined direction with respect to the nanowire 660 provided on the substrate 210 and the flowing gas 770 and nanowires The method of contact 660 may apply. The gas may be an inert gas, and may be, for example, nitrogen or argon gas. As an example, the nanowires 660 may be arranged on the substrate 210 along the flow of the flowing gas 770. The nanowires 660 may be arranged in substantially the same direction while being spaced apart from each other.

8 and 9 illustrate a method of applying a physical force to the nanowires 660 provided on the substrate 210 in another embodiment of the present application. According to one embodiment, the process of applying the physical force, first, the lubricant 880 is coated on the substrate 210 provided with the nanowire 660. As an example, the lubricant 880 may be oil, but is not limited thereto, and water and various other liquids may be used.

Referring to FIG. 9, an array substrate 990 is prepared. Then, the substrate 210 coated with the lubricant 880 is brought into contact with the substrate 990 for alignment. The array substrate 990 is moved in a predetermined direction in contact with the substrate 210. The array substrate 990 may transfer a physical force to the substrate 210 by moving in the predetermined one direction while being in contact with the substrate 210. The array substrate 990 may include, for example, a polymer such as PDMS, silicon, or silicon oxide, but is not limited thereto, and various materials capable of transmitting a physical force to the substrate 210 may be applied. As a result, the nanowires 660 are arranged on the substrate 210 along the moving direction of the array substrate 990. As shown, the nanowires 660 may be arranged in substantially the same direction while being spaced apart from each other.

According to an embodiment, before arranging the nanowires 660 using the array substrate 990, an array method using the flow of the gas 770 described above with reference to FIG. 7 may be additionally applied. In this case, the arrangement method using the flow of the gas 770 may arrange the nanowires 660 preliminarily, so that the nanowire 660 arrangement method using the array substrate 990 may be more efficiently performed. have.

According to some embodiments, the process of coating the lubricant 880 described above with reference to FIG. 8 may be omitted. That is, after contacting the array substrate 210 with the nanowire 660 disposed substrate 210 without the lubricant 880 coated thereon, the physical force is transferred by moving the array substrate 990 in a predetermined direction. The nanowires 660 may be arranged on the substrate 210 while being transferred to 210.

Referring to FIG. 10, the appearance of the nanowire 660 arranged on the substrate 210 after the alignment process using the array substrate 990 is disclosed. As shown, the nanowires 660 are arranged in a line in a predetermined direction.

According to one embodiment of the present application, in the VLS method applying the metal catalyst pattern, by using the property that the nanowires are selectively grown on the metal catalyst pattern, it is possible to adjust the position, size, density, etc. of the nanowires. Thereafter, a physical force may be applied to the nanowires grown with a predetermined density and position to form the nanowires in a predetermined direction on the substrate.

11 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 11, first, at 1110 blocks, a nanowire having a controlled position and density is provided on a first surface of a translucent first substrate. For example, the transparent first substrate may include a glass, a heat resistant glass, quartz, sapphire, zinc oxide, or the like as a transparent substrate. The process of providing the nanowires whose position and density are controlled on the first surface of the translucent first substrate may be substantially the same as the processes of the above-described embodiments with reference to FIGS. 2 to 6. Therefore, detailed description is omitted in order to exclude duplication.

According to another embodiment, the process of providing the nanowires in which the position and the density are controlled on the first surface of the translucent first substrate is performed by the process described above with reference to FIGS. 2 to 10. First, the controlled nanowires are provided. Thereafter, the preliminary substrate and the translucent first substrate may be bonded to each other, and the nanowires may be moved from the preliminary substrate to the translucent first substrate. The movement process of the nanowires may be performed by, for example, performing a functionalization process to improve adhesion to the nanowires on the translucent first substrate.

In block 1120, the nanowires are arranged on the first surface of the first transparent substrate by applying a physical force to the nanowires provided on the first surface of the first transparent substrate. Arranging the nanowires on the first surface of the light transmissive first substrate by applying a physical force is substantially the same as the process of the above-described embodiments with reference to FIGS. 7 to 10. Therefore, detailed description is omitted in order to exclude duplication.

In block 1130, a second substrate is provided. The second substrate may be a substrate that actually requires aligned nanowires, for example, a substrate on which aligned nanowires may be disposed as one component of an electronic device. Therefore, the second substrate may be made of various materials or may include various structures.

In block 1140, the light transmissive first substrate is aligned on the first surface of the second substrate. The alignment process may include forming an alignment mark on the light transmissive first substrate and the second substrate, and arranging the alignment marks to correspond to each other. In this case, the alignment mark may perform a function of aligning the nanowires of the translucent first substrate to a position corresponding to the position of the second substrate to which the nanowires are to be moved. Since the light-transmissive first substrate has a transparent property having transparency, the alignment marks of the light-transmissive first substrate may be aligned to correspond to the alignment marks formed on the second substrate.

In block 1150, the first surface of the translucent first substrate and the first surface of the second substrate are bonded. The bonding process may include performing a functionalization treatment to improve adhesion to the nanowires on the first surface of the second substrate, and a first surface of the first substrate on the first surface of the second substrate on which the functionalization treatment is performed. It involves the process of splicing. The functionalization treatment may be performed using polyelasin, and the nanowires may have better adhesion to the second substrate than the first substrate by the functionalization treatment.

In block 1160, the nanowires arranged on the first side of the translucent first substrate are moved to the first side of the second substrate. The bonded light-transmissive first substrate and the second substrate are detached. In this case, the nanowires are arranged on the second substrate having a relatively excellent adhesion. The nanowires may be arranged on the second substrate while maintaining the arrangement state of the transparent first substrate.

As such, first, nanowires may be formed and arranged on the first transparent substrate, and the nanowires formed and reheated on the first transparent substrate may be transferred to the second substrate.

Hereinafter, a method of arranging nanowires on a substrate according to an embodiment described above with reference to FIG. 11 will be described in more detail with reference to the accompanying drawings.

12 to 19 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application. Referring to FIG. 12, a light transmissive first substrate 1210 is prepared. For example, the transparent first substrate 1210 may be a substrate made of a transparent material, and may include glass, heat resistant glass, quartz, sapphire, zinc oxide, or the like.

Referring to FIG. 13, a first alignment mark 1320 is formed on the transparent first substrate 1210. The first alignment mark 1320 is positioned to correspond to the second alignment mark 1620 disposed on the second substrate 1510, which will be described later, to align the transparent first substrate 1210 and the second substrate 1510. Can be. The use of the above-described alignment mark is a technique currently used generally in the semiconductor manufacturing process for the alignment of the process substrate and the mask. The method of forming the first alignment mark 1320 may apply a known thin film deposition and patterning process.

Referring to FIG. 14, the nanowire 1430 having a controlled position and density is formed on the first surface 1410 of the first transparent substrate 1210, and the first surface 1410 of the first transparent substrate 1210 is formed. The nanowire 1430 is arranged on the first surface 1410 of the translucent first substrate 1210 by applying a physical force to the nanowire 1430 provided therein. In the drawing, the second surface 1420 of the first transparent substrate 1210 refers to the opposite side of the first surface 1410 of the first transparent substrate 1210 on which the nanowires 1430 are arranged. The process of forming and arranging the nanowires 1430 on the first surface 1410 of the first transparent substrate 1210 is substantially the same as the process of the above-described embodiments with reference to FIGS. 2 to 10. Therefore, detailed description is omitted in order to exclude duplication.

Referring to FIG. 15, a second substrate 1510 is prepared. The second substrate 1510 may be a substrate that actually requests the aligned nanowires 1430. For example, the second substrate 1510 may be a substrate on which the aligned nanowires may be disposed as one component of the electronic device. Therefore, the second substrate 1510 may be made of various materials or may include various structures. In the figure, the second substrate 1510 on which the insulator film 1520 is formed is shown.

Referring to FIG. 16, a second alignment mark 1620 is formed on the second substrate 1510. The second alignment mark 1620 may be positioned to correspond to the first alignment mark 1320 disposed on the transparent first substrate 1210 to align the transparent first substrate 1210 and the second substrate 1510. have. The use of the above-described alignment mark is a technique currently used generally in the semiconductor manufacturing process for the alignment of the process substrate and the mask. The method of forming the second alignment mark 1620 may apply a known thin film deposition and patterning process.

Referring to FIG. 17, a functionalization process is performed to improve adhesion to the nanowires 1430 on the first surface 1520 of the second substrate 1510. The functionalization process may be performed to form a functionalization layer 1730. The functionalization process may be performed by applying the adhesion between the nanowires 1430 and the second substrate 1510 to the nanowires 1430 and the transparent first substrate 1210. It can be carried out to improve the adhesion of the liver. The functionalization may be performed using, for example, polyelasin. After the bonding process and the desorption process described below, the functionalization may be omitted if the adhesion of the nanowire 1430 to the second substrate 1510 can be secured.

Referring to FIG. 18, the transparent first substrate 1210 is aligned on the first surface 1520 of the second substrate 1510. In an embodiment, the alignment process may include disposing alignment marks 1320 and 1620 of the first transparent substrate 1210 and the second substrate 1510 to correspond to each other. In this case, the alignment marks 1320 and 1620 are positioned such that the nanowires 1430 of the first transparent substrate 1210 are positioned at positions corresponding to the positions of the second substrates 1510 on which the nanowires 1430 are to be moved. You can do the sorting function. Since the light transmissive first substrate 1210 has a translucent property, the alignment mark of the light transmissive first substrate may be aligned to correspond to the alignment mark formed on the second substrate 1510. That is, in one embodiment, the transparent first substrate 1210 has a transparent property, so that the first transparent substrate 1210 is disposed on the second substrate 1510, the image of the first transparent substrate 1210 Alignment marks 1320 and 1620 can be observed using a microscope in the direction. The alignment process may be performed by moving the positions of the transparent first substrate 1210 and the second substrate 1510 based on the observation result. When the alignment process is completed, the light transmissive first substrate 1210 and the second substrate 1510 are bonded to each other.

Referring to FIG. 19, the second substrate 1510 and the transparent first substrate 1210 are separated from each other. When the light-transmissive first substrate 1210 is detached from the second substrate 1510, the nanowires 1430 are arranged on the second substrate 1510 having a relatively good adhesion. The arrangement state of the nanowires 1430 on the second substrate 1510 maintains the arrangement state of the nanowires 1430 on the transparent first substrate 1510.

Thus, first, the nanowires 1430 are formed and arranged on the first transparent substrate 1210, and the nanowires 1430 formed and arranged on the first transparent substrate 1210 are transferred to the second substrate 1510. You can. In some embodiments, the nanowires 1430 arranged on the light transmissive first substrate 1210 correspond to the alignment direction required for the second substrate 1510, so that the light transmissive first substrate 1210 and the second substrate ( 1510) after the alignment is made. As a result, the nanowires 1430 arranged in one direction on the second substrate 1510 may be implemented.

20 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to another embodiment of the present application. Referring to FIG. 20, first, in the 2010 block, nanowires having a controlled position and density on a first surface of a first substrate are formed by a VLS method using a metal catalyst. This process is substantially the same as the process in the embodiment described above with reference to FIGS. 2 to 6 of the present application. Therefore, detailed description is omitted in order to exclude duplication.

In block 2020, the nanowires are arranged on the first surface of the first substrate by applying a physical force to the nanowires formed on the first surface of the first substrate. This process is substantially the same as the process in the embodiment described above with reference to FIGS. 7 to 10 of the present application. Therefore, detailed description is omitted in order to exclude duplication.

In block 2030, a light transmissive second substrate is provided. For example, the transparent second substrate may be a substrate made of a transparent material, and may include glass, heat resistant glass, quartz, sapphire, zinc oxide, and the like. The second transparent substrate may serve as a medium for moving the nanowires from the first substrate on which the nanowires are formed to a third substrate that is a substrate that requests the nanowires to be actually aligned.

In block 2040, the nanowires arranged on the first side of the first substrate are moved to the first side of the translucent second substrate. The moving process may include forming an alignment mark on the first substrate and the light transmissive second substrate, and arranging and arranging the first substrate and the light transmissive second substrate to correspond to the alignment marks. And bonding the first substrate and the light transmissive second substrate, separating the first substrate and the light transmissive second substrate, and moving the nanowires from the first substrate to the light transmissive second substrate. do. In this case, the alignment mark may perform a function of aligning the nanowire of the first substrate to be positioned at a position corresponding to the position of the light transmissive second substrate to which the nanowire is to be moved. Since the process is substantially the same as the process described above with reference to FIGS. 12 to 19, a detailed description thereof will be omitted.

In block 2050, a third substrate is provided. The third substrate may be a substrate that actually requests aligned nanowires. For example, the third substrate may be a substrate on which aligned nanowires may be disposed as one component of an electronic device. Therefore, the second substrate may be made of various materials or may include various structures.

In block 2060, the nanowires moved to the first surface of the second transparent substrate are moved to the third substrate. The process may include forming an alignment mark on the second transparent substrate and the third substrate, arranging the alignment marks to correspond to each other, bonding the third substrate and the second transparent substrate, and forming the alignment mark. Separating the substrate from the transparent second substrate and moving the nanowires from the transparent second substrate to the third substrate. In this case, the alignment mark may perform a function of aligning the nanowires of the light transmissive second substrate to a position corresponding to the position of the third substrate to which the nanowires are to be moved. Since the process is substantially the same as the process described above with reference to FIGS. 12 to 19, a detailed description thereof will be omitted.

Hereinafter, a method of arranging nanowires on a substrate according to an embodiment described above with reference to FIG. 20 will be described in more detail with reference to the accompanying drawings.

21 to 26 are diagrams illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 21, an insulator film 2120 is formed on the first substrate 2110. The first alignment mark 2130 is formed on the insulator film 2120. In some embodiments, the insulator film 2120 may be omitted and an alignment mark 2130 may be formed on the first substrate 2110. Since the process of forming the alignment mark 2130 is substantially the same as the process of forming the alignment mark 2130 in the above-described embodiment with reference to FIG. 13, a detailed description thereof will be omitted.

Referring to FIG. 22, nanowires 2240 are formed and arranged on the first surface 2115 of the first substrate 2110. Forming and arranging the nanowires 2240 are substantially the same as those described above with reference to FIGS. 2 to 10, and thus a detailed description thereof will be omitted.

Referring to FIG. 23, a light transmissive second substrate 2310 is prepared. An alignment mark 2330 is formed on the light transmissive second substrate 2310. Since the process of forming the alignment mark 2330 is substantially the same as the process of forming the alignment mark 2330 in the above-described embodiment with reference to FIG. 13, a detailed description thereof will be omitted.

Referring to FIG. 24, the nanowires 2240 arranged on the first surface 2115 of the first substrate 2110 are moved to the first surface of the transparent second substrate 2310. Since the movement method of the nanowire 2240 is substantially the same as the above-described process with reference to FIGS. 12 to 19, a detailed description thereof will be omitted.

Referring to FIG. 25, a third substrate 2510 is provided. The third substrate 2510 is a substrate that actually requests the aligned nanowires 2240. For example, the third substrate 2510 may be a substrate on which the aligned nanowires may be disposed as one component of the electronic device. An alignment mark 2530 may be formed on the third substrate 2510. The third substrate 2510 and the transparent second substrate 2310 are aligned using the alignment marks 2330 and 2530, and then bonded and detached. At this time, the nanowire 2240 moved to the first surface of the second transparent substrate 2310 is moved to the third substrate 2510. Since the movement method of the nanowire 2240 is substantially the same as the above-described process with reference to FIGS. 12 to 19, a detailed description thereof will be omitted.

Referring to FIG. 26, a nanowire 2240 arranged on a third substrate 2510 is illustrated. As described above, in the present exemplary embodiment, the nanowires arranged on the first substrate may be moved to the third substrate through the second transparent substrate.

The method of arranging nanowires on a substrate according to an embodiment of the present application may be applied to various aspects in manufacturing an electronic device. 27 to 30 schematically illustrate an application of the method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 27, by repeatedly performing a nanowire array method according to an embodiment of the present application, nanowires 2720. 2730 having different directions and arrangements may be formed on a substrate 2710. 28 is a view illustrating a process of forming a field effect transistor using a nanowire array method according to an embodiment of the present application. Referring to FIG. 28, first, a substrate 2810 is prepared in FIG. (b) In the figure, the nanowires 2820 arranged on the preliminary substrate are moved to the substrate 2810 according to one embodiment of the present application. The nanowire 2820 may function as a channel layer of the field effect transistor. (c) Referring to the drawing, an electrode layer 2830 is formed on a portion of the nanowire 2820. The electrode layer forming process may include forming a polymer pattern, depositing a conductor layer, and lifting-off a polymer pattern. Referring to the drawing, a gate insulating layer 2840 is deposited on the substrate on which the nanowires 2820 and the electrode layer 2830 are formed. As an example, the gate electrode layer 2840 may be a silicon oxide film, an aluminum oxide film, a hafnium oxide film, or the like. (e) A nanowire 2850 is formed as a first gate electrode on the gate insulating layer 2840 in the drawing. The process of forming the nanowires 2850 may be accomplished by moving the nanowires 2850 arranged on the preliminary substrate to the substrate 2810 according to one embodiment of the present application. (f) A second gate electrode 2860 is formed in the figure.

As such, the nanowire array method according to an embodiment of the present application may be applied to the method of forming the field effect transistor using the nanowire.

Although described above with reference to the drawings and embodiments, those skilled in the art will be variously modified and changed the embodiments disclosed in this application within the scope not departing from the technical spirit of the present application described in the claims below I can understand that you can.

210: substrate, 220: polymer, 230: insulator film,
330: polymer contact pattern, 440: metal layer, 550: metal catalyst pattern, 660: nanowire, 770: gas, 880: lubricant, 990: array substrate,
1210: first transparent substrate, 1320: first alignment mark, 1410: first surface of first transparent substrate, 1420: second side of first transparent substrate, 1430: nanowire, 1510: second substrate, 1520: insulator Membrane, 1620: second alignment mark, 1730: functionalized layer,
2110: first substrate, 2115: first surface of first substrate, 2120: insulator film, 2130: first alignment mark, 2240: nanowire, 2310: second substrate, 2330: alignment mark, 2530: alignment mark, 2710 : Substrate, 2720, 2730: nanowire,
2810: substrate, 2820: nanowire, 2830: electrode layer, 2840: gate insulating layer, 2850: first gate electrode, 2860: second gate electrode.

Claims (20)

In the arrangement method of the nanowires,
(a) providing a location and density controlled nanowire on the substrate; And
(b) applying a physical force to the nanowires provided on the substrate;
Arrangement method of nanowires. The method according to claim 1,
(a) the process
(a1) forming a metal catalyst pattern on the substrate; And
(a2) growing a nanowire from the metal catalyst pattern;
Arrangement method of nanowires. The method of claim 2,
(a1) process
Applying a polymer on the substrate;
Patterning the polymer to form a contact pattern of the polymer;
Depositing a metal layer on the substrate including the contact pattern; And
Lifting off the polymer to form the metal catalyst pattern;
Arrangement method of nanowires. The method of claim 2,
(a2) the process
A nanowire array method for growing a nanowire from the metal catalyst pattern by applying the VLS method. The method according to claim 1,
(B) process
The nanowire arrangement method for flowing the gas in one direction with respect to the nanowire provided on the substrate and the nanowire is arranged by contacting the flowing gas and the nanowire. The method of claim 5,
The gas is an inert gas, wherein the nanowires are arranged in the direction in which the inert gas flows. The method according to claim 1,
(B) process
(b1) preparing an array substrate;
(b2) contacting the substrate provided with the nanowires with the array substrate; And
(b3) A method of arranging nanowires, comprising moving the array substrate in one direction in contact with the substrate. The method according to claim 1,
The step (b)
(b1) coating a lubricant on the substrate provided with the nanowires;
(b2) preparing an array substrate;
(b3) contacting the lubricant coated substrate with the array substrate; And
(b4) A method of arranging nanowires, comprising moving the array substrate in one direction while being in contact with the substrate. The method according to claim 7 or 8,
Method of arranging nanowires in which the nanowires are arranged along the moving direction of the array substrate. In the method of arranging nanowires on a substrate,
(a) providing a location and density controlled nanowire on the first side of the light transmissive substrate;
(b) arranging the nanowires on the first side of the first transparent substrate by applying a physical force to the nanowires provided on the first side of the first transparent substrate;
(c) providing a second substrate;
(d) aligning the translucent first substrate on a first side of the second substrate;
(e) bonding the first surface of the translucent first substrate and the first surface of the second substrate; And
(f) moving the nanowires arranged on the first side of the translucent first substrate to the first side of the second substrate;
Method of arranging nanowires on a substrate. The method of claim 10,
(a) The process is performed by the VLS method using a metal catalyst pattern
Method of arranging nanowires on a substrate. The method of claim 10,
(b) The method of applying the physical force of the process
Flowing gas to the substrate or contacting the array substrate with the substrate and moving the array substrate;
Method of arranging nanowires on a substrate. The method of claim 10,
(d) process
Forming an alignment mark on the translucent first substrate and the second substrate; And
Arranging the alignment marks to correspond to each other,
The alignment mark may be aligned such that the nanowires of the light transmissive first substrate are positioned at positions corresponding to the positions of the second substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate. The method of claim 10,
Step (e) is
(e1) performing a functionalization treatment to improve adhesion to the nanowires on the first surface of the second substrate; And
(e2) bonding the first surface of the first substrate to the first surface of the second substrate on which the functionalization is performed;
Method of arranging nanowires on a substrate. The method of claim 14,
The functionalization is carried out using polyelasin
Method of arranging nanowires on a substrate. The method of claim 10,
(f) process
And detaching the light-transmissive first substrate and the second substrate,
After the desorption, the nanowires are arranged on a second substrate having relatively good adhesion to the nanowires.
Method of arranging nanowires on a substrate. (a) forming a nanowire whose position and density are controlled on the first surface of the first substrate by a VLS method using a metal catalyst;
(b) arranging the nanowires on the first surface of the first substrate by applying a physical force to the nanowires formed on the first surface of the first substrate;
(c) providing a transparent second substrate;
(d) moving the nanowires arranged on the first side of the first substrate to the first side of the translucent second substrate;
(g) providing a third substrate;
(h) moving the nanowires moved to the first surface of the translucent second substrate to the third substrate;
Method of arranging nanowires on a substrate. The method of claim 17,
(b) The method of applying the physical force of the process
Flowing gas to the first substrate or contacting the array substrate with the first surface of the first substrate and moving the array substrate;
Method of arranging nanowires on a substrate. The method of claim 17,
(d) process
Forming alignment marks on the first substrate and the transparent second substrate; And
Arranging the alignment marks to correspond to each other,
The alignment mark is aligned to position the nanowires of the first substrate at a position corresponding to the position of the translucent second substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate. The method of claim 17,
(h) the process of moving
(h1) forming an alignment mark on the transparent second substrate and the third substrate; And
(h2) including arranging the alignment marks to correspond to each other,
The alignment mark is aligned so that the nanowires of the translucent second substrate are positioned at a position corresponding to the position of the third substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate.
KR1020110054438A 2011-06-07 2011-06-07 Method of arranging nanovire on substrate KR20110074500A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110054438A KR20110074500A (en) 2011-06-07 2011-06-07 Method of arranging nanovire on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110054438A KR20110074500A (en) 2011-06-07 2011-06-07 Method of arranging nanovire on substrate

Publications (1)

Publication Number Publication Date
KR20110074500A true KR20110074500A (en) 2011-06-30

Family

ID=44404792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110054438A KR20110074500A (en) 2011-06-07 2011-06-07 Method of arranging nanovire on substrate

Country Status (1)

Country Link
KR (1) KR20110074500A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012105595A1 (en) 2011-08-10 2013-02-14 Samsung Electronics Co. Ltd. Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012105595A1 (en) 2011-08-10 2013-02-14 Samsung Electronics Co. Ltd. Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer
DE102012105595B4 (en) 2011-08-10 2021-10-07 Samsung Electronics Co. Ltd. Magnetic tunnel junction devices, memories, storage systems and electronic devices

Similar Documents

Publication Publication Date Title
JP5249196B2 (en) Method for forming a pattern of metal, metal oxide and / or semiconductor material on a substrate
Meitl et al. Transfer printing by kinetic control of adhesion to an elastomeric stamp
JP4927542B2 (en) Method, apparatus and composition for depositing and orienting nanostructures
JP5701331B2 (en) Pattern transfer printing with dynamic control of adhesion to elastomeric stamps
EP1594002A2 (en) Method for manufacturing large area stamp for nanoimprint lithography
KR100702531B1 (en) Nanowire device and fabricating method for the same
KR101039630B1 (en) Method to assemble nano-structure on a substrate and nano-molecule device comprising nano-structure formed thereby
KR101182522B1 (en) fabrication method of nano pattern and fabrication method for TFT and LCD using the same
KR101861644B1 (en) High contrast alignment marks through multiple stage imprinting
KR100716937B1 (en) Fabrication method for a nanowire device
CN110098328A (en) Flexible electronic device and its manufacturing method
KR20110074500A (en) Method of arranging nanovire on substrate
US10424480B2 (en) Method for making thin film transistor with nanowires as masks
KR20100050699A (en) Patterning method of metal line on flexible substrate using nanoimprint lithography
KR20140068616A (en) Method for fabricating nano/micro hybrid structure
JP2007329351A (en) Thin-line-form structure assembly, electronic device having same assembly, manufacturing methods of these, and orienting method of same thin-line-form structure
KR101886056B1 (en) forming method of nanostructure pattern by vacuum deposition and sensor device thereby
US10424479B2 (en) Method for making nano-scaled channels with nanowires as masks
KR101029995B1 (en) High Integrating Method of 1 Dimensional or 2 Dimensional Conductive Nanowires Using Charged Materials, and High Integrated Conductive Nanowires by the Same
KR101327310B1 (en) Patterninig Method Using Imprint Lithography and Multi-Layer Film
CN109946340B (en) Preparation method of two-dimensional layered material sample electrical testing microelectrode
US11011628B2 (en) Method for making thin film transistor with nanowires as masks
KR101081717B1 (en) Method of fabricating catalyst pattern for nano wire growth, method of fabricating nano wire using the catalyst pattern and nano wire device using the fabricated nano wire by the method
TWI668184B (en) A method for making microstructure in nanoscale
Hu et al. Nano-electro-mechanical systems fabricated using tip-based nanofabrication

Legal Events

Date Code Title Description
A201 Request for examination
G15R Request for early opening
E902 Notification of reason for refusal
E601 Decision to refuse application