KR20110039300A - Substrate heating apparatus, liquid material applying apparatus provided with substrate heating apparatus, and substrate heating method - Google Patents

Substrate heating apparatus, liquid material applying apparatus provided with substrate heating apparatus, and substrate heating method Download PDF

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KR20110039300A
KR20110039300A KR20117002267A KR20117002267A KR20110039300A KR 20110039300 A KR20110039300 A KR 20110039300A KR 20117002267 A KR20117002267 A KR 20117002267A KR 20117002267 A KR20117002267 A KR 20117002267A KR 20110039300 A KR20110039300 A KR 20110039300A
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substrate
heating
board
opening
contact
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KR20117002267A
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Korean (ko)
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KR101568238B1 (en
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가즈마사 이쿠시마
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무사시 엔지니어링 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Coating Apparatus (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

This invention provides the board | substrate heating apparatus which can reduce the temperature change of the board | substrate with which the semiconductor chip is mounted, and prevents the breakage of a connection part before and behind an application | coating operation, the coating apparatus provided with the same, and the board | substrate heating method.
A substrate heating device for heating a substrate, which is conveyed in one direction and coated on a workpiece disposed thereon, during the conveyance from below, a flat upper surface which abuts on the bottom surface of the substrate and heats the substrate, and the upper surface. And a heating member provided on the bottom surface of the substrate, the heating member having an ejection opening for ejecting a gas for heating, and an elevating mechanism for elevating the heating member. Device and substrate heating method.

Description

SUBSTRATE HEATING APPARATUS, LIQUID MATERIAL APPLYING APPARATUS PROVIDED WITH SUBSTRATE HEATING APPARATUS, AND SUBSTRATE HEATING METHOD}

This invention relates to the board | substrate heating apparatus which heats the board | substrate with which a liquid material is apply | coated, the coating apparatus provided with it, and a board | substrate heating method. In particular, the present invention relates to a substrate heating apparatus, an application apparatus having the same, and a substrate heating method, which prevent damage to the substrate or the chip mounted thereon in the underfill process of the semiconductor packaging until the underfill process is completed.

In this specification, a substrate on which a work such as a semiconductor chip is mounted may be simply referred to as a substrate.

One of the semiconductor chip mounting technologies is a flip chip method. In the flip chip method, a protrusion-shaped electrode is formed on the surface of the semiconductor chip 1 and directly connected to the electrode pad on the substrate 2.

In the flip chip package, in order to prevent the stress generated by the difference in the coefficient of thermal expansion between the semiconductor chip 1 and the substrate 2 from being concentrated on the connection part 3, the connection part 3 is destroyed. The gap between 1) and the substrate 2 is filled with a resin 4 to reinforce the connecting portion 3. This process is called underfill (see FIG. 1).

In the underfill process, the liquid resin 4 is applied along the outer circumference of the semiconductor chip 1, and the resin 4 is applied to the semiconductor chip 1 and the substrate 2 by capillary action. It fills in the clearance gap, and heats it with oven etc., and hardens resin 4.

In recent years, further miniaturization and thinning of products have progressed, and accordingly, miniaturization and thinning of the semiconductor chip 1 and the board | substrate 2 itself by the flip chip system are also progressing. When the size is small and thin, heat is easily transferred to the semiconductor chip 1 and the substrate 2, and thus, the connection portion 3 is easily broken by the above-described stress. Therefore, in order to ensure reinforcement in an underfill process, heating of a board | substrate is performed in order to lower | hang the viscosity of resin and to make it easy to fill.

For example, Patent Literature 1 discloses a substrate heating apparatus that heats a substrate by blowing a heated gas, and has a protrusion provided to protrude upward toward the bottom surface of the substrate, and one end is opened on the upper surface of the protrusion. A heating unit having a gas flow passage in which the other end communicates with the gas supply portion in the blowing hole, gas heating means for heating the gas flowing in the gas flow passage, an on / off valve for turning on / off the flow of gas into the gas flow passage, opening and closing Disclosed is a substrate heating apparatus comprising a valve control unit for heating a substrate to a target temperature by controlling the opening and closing operation of the valve.

In addition, Patent Document 2 discloses that in the underfilling step, when resin is injected between the IC chip and the substrate, the IC chip is energized to contact the hot plate heated only to the IC chip, or only to the IC chip. A method of mounting an electronic component is disclosed in which the viscosity of the resin between the IC chip and the substrate is lowered than the viscosity of the resin in other portions by applying vibration.

Patent document 3 has an application | coating stage which mounts the TAB tape which mounted a semiconductor chip, and is a manufacturing apparatus of the semiconductor device which supplies resin between a semiconductor chip and a TAB tape, Comprising: A semiconductor chip and a TAB tape are heated on an application | coating stage. Disclosed is a manufacturing apparatus for a semiconductor device, comprising a heating means.

Japanese Patent Application Publication No. 2006-314861 Japanese Patent Application Publication No. 2005-45284 Japanese Patent Application Publication No. 2007-227558

As described in each of the aforementioned patent documents, a substrate heating apparatus for heating a substrate only at the time of application has conventionally existed. However, the apparatus which heats a board | substrate before and after application | coating was not known to the applicant. That is, in the conventional board | substrate heating apparatus, since it becomes a non-heated state at the time of conveyance before and behind application | coating, the temperature change at the time of application | coating and conveyance becomes large, and the change of the stress which arises by the difference of the above-mentioned thermal expansion coefficient is large. As a result, the connection part is easily broken.

Accordingly, the present invention provides a substrate heating apparatus capable of reducing the temperature change of a substrate on which a semiconductor chip is mounted and preventing breakage of the connecting portion before and after the coating operation, a coating apparatus having the same, and a substrate heating method. For the purpose of

1st invention is a board | substrate heating apparatus for heating below the board | substrate conveyed in one direction and the application | coating operation | work performed with respect to the workpiece | work arrange | positioned on it in the middle of a lower surface, which is in contact with the bottom surface of the said board | substrate, and heats a board | substrate It is a board | substrate heating apparatus provided in the upper surface and the said upper surface, Comprising: The heating member provided in the bottom surface of the said board | substrate, and the opening part which blows off the gas for heating, and the elevating mechanism which raises and lowers a heating member.

According to a second aspect of the present invention, in the first aspect, the heating member has a suction opening on the upper surface thereof to apply a suction force to the bottom surface of the substrate, and at the lift position of the lifting mechanism, A suction force is applied, the upper surface of the heating member is brought into contact with the bottom surface of the substrate to heat the substrate, and at the lowered position of the elevating mechanism, the heated gas is ejected from the ejection opening to heat the substrate. Characterized in that.

In the second invention, in the second invention, the ejection opening and the suction opening are constituted by the same opening, and the opening is provided with a negative pressure source and a pressurizing source through a switching valve. It is characterized by being connected to.

As for 4th invention, in any one of 1st invention-3rd invention, there exist multiple said openings, It is characterized by the above-mentioned.

In 5th invention, in any one of 1st invention-4th invention, a some heating member is provided continuously in the conveyance direction of the said board | substrate, It is characterized by the above-mentioned.

6th invention is a 5th invention WHEREIN: The said heating member is comprised by the several kind of heating block from which length differs. It is characterized by the above-mentioned.

7th invention provides the board | substrate heating apparatus by any one of 1st invention-6th invention, the discharge apparatus which discharges the said liquid material, the drive mechanism which makes the said discharge apparatus relatively move with respect to the said board | substrate, It is a liquid material coating apparatus provided with the conveyance mechanism which conveys the said board | substrate to one direction, and the control part which controls these operations.

8th invention is a 7th invention WHEREIN: When the said control part performs an application | coating operation | work to the workpiece | work arrange | positioned on the board | substrate, the upper surface of a heating member is made to contact a bottom surface of a board | substrate with the said lifting mechanism in a raised position, and a board | substrate At the time of conveyance, the said lifting mechanism is set to the lowered position, and the heated gas is blown out from the said blower outlet, It is characterized by the above-mentioned.

9th invention is a board | substrate heating method for heating the board | substrate which is conveyed in one direction and the application | coating operation | work is performed to the workpiece | work arrange | positioned on it in the middle from below, The flat top surface of a heating member to the bottom surface of the said board | substrate by a lifting mechanism. And a contact heating step of heating the substrate to separate the bottom surface of the substrate from the upper surface of the heating member by the elevating mechanism to blow out the gas for heating from the blowing opening formed in the upper surface of the heating member. It is a board | substrate heating method characterized by including a non-contact heating process.

In a ninth invention, in the ninth invention, in the contact heating step, a suction force is applied from a suction opening formed on an upper surface of the heating member.

11th invention WHEREIN: In 10th invention, the said injection opening and the said suction opening are comprised by the same opening, and the said opening is connected to the negative pressure source and the pressurization source via a switching valve, and in the said contact heating process, And the opening and the negative pressure source communicate with each other, and in the non-contact heating step, the opening and the pressure source communicate with each other.

12th invention WHEREIN: The invention of any one of 9th invention-11th invention WHEREIN: The said contact heating process is performed when apply | coating work to the workpiece | work arrange | positioned on the said board | substrate, and the said non-contact at the time of conveyance of the said board | substrate. A heating step is performed.

According to a twelfth invention, in the twelfth invention, the non-contact heating step is performed before and after the coating operation.

According to a twelfth invention or the thirteenth invention, the coating operation is an underfill process.

According to a fifteenth aspect of the invention, in the contact heating step and the non-contact heating step, the entire bottom surface of the substrate is heated evenly. By heating the entire bottom surface of the substrate evenly, the connection portion can be more effectively protected.

If the substrate heating apparatus of this invention is demonstrated from another viewpoint, it is as follows.

The substrate heating apparatus of the present invention is a substrate heating apparatus which is provided below a conveyance mechanism for conveying a substrate to which a liquid material is applied, and heats the substrate, one end of which is in communication with a distribution port, and the other end of which is a negative pressure source and a pressure source. A flow passage communicated with a switching valve for switching communication with the heater, a heating block in which the flow passage is laid on the surface facing the substrate, and in which the flow passage is insulted; A heater for heating the heating block and further heating a gas in the flow path, a temperature sensor built into the heating block to detect a temperature of the heating block, and the heater based on a signal from the temperature sensor. A temperature control unit for controlling the temperature, an elevated position for contacting and supporting the substrate from the bottom surface when applying the liquid material, and the substrate of the heating block when conveying the substrate. And an elevating mechanism for elevating and moving the heating block between opposite surfaces of the lowering position spaced apart from the substrate.

When the heating block is in the raised position, the switching valve communicates with a negative pressure source, sucks gas from the flow port, adsorbs the substrate supported from the bottom surface to the heating block, The substrate is heated by contacting the substrate, and when in the lowered position, the substrate is in communication with the pressure source by a switching valve, and is heated by the heater toward the substrate bottom surface at a position spaced apart from the heating block. It is preferable to heat the said substrate by blowing off the gas in a flow path from the said distribution port. Here, it is more preferable that a plurality of said flow ports are installed in the said heating block, and a plurality of said flow paths are built in.

In addition, the flow passage has a first flow passage where one end communicates with a first flow port, the other end communicates with a first valve for switching communication with a negative pressure source, and one end communicates with a second flow port, and the other end is pressurized. It is divided into the 2nd flow path connected to the 2nd valve which switches communication with a circle, The said heating block has the said 1st flow path and the said 2nd flow path installed in the surface which faces a board | substrate, and the said 1st flow path And it is preferable that the second flow path is built in. Here, when the heating block is in the elevated position, the heating block communicates with the negative pressure source by the first valve, sucks gas from the first flow port, and adsorbs the substrate supported from the bottom surface to the heating block. And heating the substrate by bringing the heating block into contact with the substrate, and when in the lowered position, communicates with a pressurized source by the second valve to face the substrate bottom at a position spaced apart from the heating block. More preferably, the substrate is heated by blowing gas in the second flow path heated by the heater from the second flow port.

Here, it is most preferable that the plurality of first flow paths and the second flow paths are installed in the heating block while a plurality of the first flow paths and the second flow paths are laid.

The coating device of this invention is demonstrated from another viewpoint as follows.

The coating device of the present invention includes any one of the above-described substrate heating devices, a discharge device for discharging a liquid material, a drive mechanism for relatively moving the discharge device with respect to the substrate, and extends into the coating device to convey the substrate. And a control unit for controlling these operations. Here, it is preferable that the said conveyance mechanism is divided into several parts, and each of the some board | substrate heating apparatus is provided with respect to each of the some parts of the said conveyance mechanism.

According to the present invention, heating is performed not only at the time of coating but also at the time of conveyance before and after, so that, for example, in the underfill process, the temperature change of the substrate on which the semiconductor chip is mounted is extremely small, and thus the breakage of the connecting portion can be prevented. have.

Moreover, since the temperature change of a board | substrate can be made extremely small during the application | coating operation | work, a liquid material state is stabilized and application | coating can be performed stably.

In addition, since two different heating methods can be performed by one heating mechanism, any heating at the time of application and non-application (at the time of conveyance) can correspond to one heating mechanism. Therefore, the device can be miniaturized.

1 is an explanatory diagram for explaining an underfill process.
2 is a schematic perspective view of a heating mechanism according to the present invention.
3 is a sectional view of an essential part of a heating mechanism according to the present invention.
4 is a block diagram of a heating mechanism according to the present invention.
It is explanatory drawing explaining the heating form in the heating block rising position which concerns on this invention.
It is explanatory drawing explaining the heating form in the heating block lowering position which concerns on this invention.
7 is a schematic perspective view of the coating apparatus according to Example 1. FIG.
It is explanatory drawing explaining the conveyance mechanism of the coating device which concerns on Example 1. FIG.
9 is a flowchart showing the flow of operation in the coating apparatus according to the first embodiment.
10 is a flowchart showing the flow of operation in the coating apparatus according to the first embodiment.
11 is a flowchart showing the flow of operation in the coating device according to the first embodiment.
12 is a flowchart showing the flow of operation in the coating apparatus according to the first embodiment.
13 is a sectional view of an essential part of a heating mechanism according to the second embodiment.
14 is a block diagram of a heating mechanism according to the second embodiment.

One embodiment for implementing the present invention will be described taking the case where the underfill process is performed on a substrate on which semiconductor chips are arranged.

[Heater body]

2 is a schematic perspective view of the substrate heating mechanism 105 according to the present invention. 3 and a block diagram are shown in FIG. 4, respectively.

Since the heating block 11 which is a main part of the heating mechanism 105 in this embodiment has a substantially rectangular parallelepiped shape, the upper surface 12 which opposes the board | substrate has the surface of the same width as the size of the board | substrate 2, It is.

On the upper surface 12, a plurality of first flow ports 13 and a plurality of second flow ports 14 are evenly arranged at regular intervals. Here, the arrangement of the distribution ports 13 and 14 shown in FIG. 2 is only an example, and the arrangement can be changed as appropriate. In the embodiment, the bottom of the substrate 2 is protected from the viewpoint of protecting the connecting portion. An even arrangement is adopted so that there is no temperature difference across the surface.

The plurality of first flow ports 13 are suction openings, and communicate with the plurality of first flow paths 15 embedded in the heating block 11. In addition, the plurality of second flow ports 14 are openings for blowing, and communicate with the plurality of second flow paths 16 built in the heating block 11, respectively. The plurality of first flow passages 15 communicate with the negative pressure source 19 through the first valve 17, and the plurality of second flow passages 16 communicate with the pressurization source 20 through the second valve 18. Communicating. By opening and closing the first valve 17 and the second valve 18, the gas in the flow paths 15 and 16 can be sucked or the gas can be blown into the flow path. Here, it is preferable that the 1st valve 17 and the 2nd valve 18 are provided in the place different from the heating block 11. In addition, you may provide the 1st valve 17 and the 2nd valve 18 in multiple numbers corresponding to the force of the negative pressure source 19 and the pressure source 20. FIG. Air flows through the flow paths 15 and 16 as the working gas, but is not limited thereto. For example, nitrogen may be used when an inert gas is desired.

The heater 21 is provided inside the heating block 11, and heats the gas in the heating block 11 and the second flow path 16. Although the heat transfer heater is used as the heater 21 in this embodiment, it is not limited to this, For example, a Peltier element etc. may be used. The number of heaters to be installed may be any number, and the arrangement thereof may be appropriately changed. However, from the viewpoint of protecting the connecting portion, it is preferable to adopt the number and arrangement in which the temperature difference does not occur in the entire bottom surface of the substrate 2. Do.

In addition to the heater 21, a temperature sensor 22 is provided inside the heating block 11. And the heater 21 and the temperature sensor 22 are connected to the temperature control part 23, and the temperature control part 23 controls the heater 21 so that temperature may become constant based on the signal from the temperature sensor 22. As shown in FIG. To control. Although a control method is not specifically limited, PID (proportional, integral, differential) control used for temperature control, general feedback control, simple on-off control, etc. are used. The arrangement and number of the temperature sensors 22 can be appropriately changed and applied.

The board | substrate 2 is conveyed by the conveyance mechanism 104 in one direction. The conveyance mechanism 104 is provided with the two rail-shaped members 109, and the heating mechanism 105 is provided in between. The heating block 11 which is a main part of the heating mechanism 105 is mounted in the lifting mechanism 24 (see FIG. 2). The lifting mechanism 24 has a rising position for supporting the substrate 2 located above the heating block 11 from the bottom surface, and a falling position for separating the heating block 11 from the substrate 2. In the raised position, the substrate 2 is fixed to the hooked substrate pressing member 106 and the upper surface 12 of the heating block.

As an apparatus for driving the lifting mechanism 24, for example, an air cylinder in which a piston is driven by a compressed gas, a combination of a motor and a ball screw, and the like can be used. When apply | coating the liquid material 4, the heating block 11 serves as an application | coating stage by moving to a raise position and supporting the board | substrate 2 from a bottom surface. On the other hand, at the time of board | substrate conveyance, the heating block 11 moves to the fall position spaced apart from the board | substrate 2 so that board | substrate conveyance may be performed smoothly. In order to efficiently maintain the substrate temperature by the heating gas, the distance between the upper surface 12 of the heating block and the bottom surface of the substrate 2 is preferably not too long, for example, several mm. The detail of the conveyance mechanism 104 is demonstrated in an Example.

[Heated sun]

The heating aspect of the heating mechanism 105 which concerns on this invention is divided roughly into two types according to the position of the heating block 11.

[1] heating at elevated position (FIG. 5)

When the heating block 11 is in the raised position, the first valve 17 communicates with the first flow path 15 and the negative pressure source 19 in the heating block 11. Thereby, gas is sucked in from the 1st flow path 13 in which the 1st flow path 15 in the heating block 11 communicates with the other stage (refer to the arrow of 26). The board | substrate 2 is located in the nearest upper part of the 1st distribution port 13, and by the suction action from the 1st distribution port 13, the board | substrate 2 is adsorbed and the upper surface 12 of a heating block is carried out. And the bottom surface of the substrate 2 closely contact each other. As such, the bottom surface of the substrate 2 comes into contact with the top surface 12 of the heating block, so that heat from the heater 21 is transferred directly and quickly through the heating block 11. The temperature of the substrate 2 can be kept constant by controlling the heater 21 so that the temperature becomes constant by the temperature control unit 23.

According to the heating method described above, by bringing the upper surface 12 of the heating block into contact with the bottom surface of the substrate 2, heat from the heater 21 can be efficiently transferred, and the temperature of the substrate 2 can be stably maintained. Can be controlled. Controlling the temperature stably not only prevents the breakage of the connecting portion 3, but also stabilizes the state of the liquid material 4 and is associated with stable application. Moreover, since it can adsorb | suck uniformly by the several opening 1st opening 13 over the board | substrate surface 12, it can contact uniformly to the board | substrate 2, and also makes the top view of the board | substrate 2 constant I can keep it.

[2] heating in the lowered position (FIG. 6)

When the heating block 11 is in the lowered position, the second valve 18 communicates the pressurization source 20 with the second flow path 16 in the heating block 11. In this way, gas is blown out from the 2nd flow path 16 in the heating block 11, and the 2nd flow port 14 connected in the other end (27). Since the second flow port 14 is spaced apart from the substrate 2, the gas flows out toward the bottom surface of the substrate 2. The jetted gas is heated by the heater 21 in the heating block 11, and heat is transmitted to the substrate 2 by the heated gas. The temperature of the substrate 2 can be kept constant by controlling the heater 21 so that the temperature becomes constant by the temperature control unit 23.

According to the above-mentioned heating method, heat can be transferred to the moving substrate 2 by blowing the heated gas from the spaced place. That is, since temperature can be controlled also about the board | substrate 2 which is moving, the temperature change in an underfill process can be made extremely small. In addition, since the heated gas is blown out from the plurality of opened second flow ports 14 over the substrate surface 12, the entire substrate 2 can be heated.

By suitably combining the above-mentioned [1] and the above [2], the substrate 2 in the underfill process is irrelevant regardless of when the substrate 2 is stopped and applied, and when the substrate 2 is moved and conveyed. The temperature can be kept constant, and the breakage of the connecting portion 3 between the semiconductor chip 1 and the substrate 2 can be prevented. It is preferable to perform heating in the fall position of said [2] before and behind an application | coating work process. Heating before an application | coating operation process is preheating, and heating after an application | coating operation process is temperature maintenance heating which suppresses the temperature change of a board | substrate to a predetermined range.

In the above, the structure which makes the bottom surface of the board | substrate 2 and the upper surface 12 of a heating block contact by making a suction force act on the 1st flow port 13 was demonstrated, However, without forming the 1st flow port 13 It is good also as a structure which contact | connects the board | substrate 2 and the upper surface 12 of a heating block by the combination of the board | substrate pressurization member 106 and the lifting mechanism 24. FIG. However, in the case where the bottom surface of the substrate is processed with good accuracy, by forming a flow opening for exerting a suction force, the action of adsorbing the upper surface of the heating block to mimic the bottom surface of the substrate can be obtained. Therefore, the contact area becomes wider, and the effect which heat conduction becomes efficient can be acquired. Moreover, when making the upper surface 12 of a heating block into an application | coating stage, the flatness of the board | substrate 2 becomes favorable and the effect which improves application | coating precision can also be acquired. These effects become particularly remarkable when the substrate 2 is thin. On the other hand, in the structure which is constricted by the board | substrate pressurization member 106, without forming the flow port which exerts a suction force, the problem of the center part of a board | substrate may arise.

It is preferable to employ | adopt the structure which forms the flow port which makes a suction force act on the heating block 11 for the reason mentioned above.

Hereinafter, although an Example demonstrates the detail of this invention, this invention is not limited by an Example.

Example 1

[Application device]

As shown in FIG. 7, the coating device 101 according to the present embodiment controls the discharge device 102, the drive mechanism 103, the transfer mechanism 104, the heating mechanism 105, and these. The control unit 124 is provided.

The discharge device 102 includes a storage container 107 (not shown) for storing the liquid material 4, and a nozzle 108 (see FIG. 1) for discharging the liquid material 4. Doing. The discharging device 102 is attached to the XYZ drive mechanism 103 so that the nozzles 108 face the application surface of the application target substrate 2, and the application target substrate 2 conveyed by the transfer mechanism 104. It is possible to move up.

The conveyance mechanism 104 is provided over the width | variety of the coating apparatus 101, is comprised by the three conveyance units 114, 115, and 116, and is each independently operable. Since the conveyance mechanism 104 is comprised by the three conveyance units, it becomes possible to perform carrying in and carrying out individually even during an application | coating operation, and can shorten a process process time. As shown in FIG. 8, the conveyance mechanism 104 of the present embodiment has a structure in which two rail members 109 widened by the width of the substrate 2 to be conveyed are provided in parallel, and the rail member 109 is provided. The belt 111 which rotates by the roller 110 is provided in the upper side of (). The belt 111 rotates by rotating the roller 110, and the board | substrate 2 mounted on the belt 111 is conveyed. The widths of the two rail members 109 can be changed in accordance with the size of the substrate 2. Here, as shown by the arrow in FIG. 7, the board | substrate 2 is carried in from the left conveyance mechanism 114 into the coating apparatus 101, via the center conveyance mechanism 115, and from the right conveyance mechanism 116. FIG. It is carried out of the coating apparatus 101.

The heating mechanism 105 is composed of three heating units 121, 122, 123. Each heating unit is provided corresponding to the conveying units 114, 115, 116 between two rail-like members 109 constituting the conveying mechanism 104. By configuring the heating mechanism 105 by three heating units, the board | substrate 2 can be heated corresponding to an individual conveyance operation.

Since the heating block 11 is about the same size as the board | substrate 2, a heating unit may not be provided in the space which is less than the size of the board | substrate 2, such as a carry-in side and a carry-out side. Therefore, in the present embodiment, the auxiliary heating units 118, 119 and 120 which are smaller than the heating unit are provided. The auxiliary heating unit is fixed at the lowered position spaced apart from the substrate 2 without lifting and lowering, and only at the point of ejecting the heated gas from the second flow port 14 without forming the first flow port 13. It differs from the heating unit mentioned above. The size of the auxiliary heating unit 118, 119, 120 should just be a size which can embed | buy between three heating units 121, 122, 123, and can be installed changing it suitably. In the present embodiment, the auxiliary heating unit 118 is positioned at the carrying in portion, the auxiliary heating unit 119 is placed at the position between the central heating unit 122 and the right heating unit 123, and the auxiliary heating is performed at the position of the carrying out portion. Each unit 120 was installed.

Although the set temperature in the heating mechanism 105 changes with the size of the board | substrate 2, the number of the semiconductor chips 1, etc., it sets in the range of 100 degreeC to 150 degreeC in general. Within this range, you may control so that heating may be performed according to the objective of preheating, the optimum temperature at the time of application | coating, and temperature maintenance heating.

[work]

The operation of the coating device 101 according to the present embodiment will be described with reference to FIGS. 9 to 12.

On the left side of the coating device 101, there is a loader or a pre-processing device that supplies the uncoated substrate 2. On the right side of the coating device 101, there is an unloader or a post-processing device for recovering the substrate 2 already coated. Hereinafter, for convenience of explanation, each of the heating unit and the auxiliary heating unit is referred to as a stage.

When the operation is started, the temperature of the inlet stage 118 and the previous stage 121 is read (STEP 101) before the substrate 2 is brought into the coating apparatus 101 to determine whether it is within a set temperature range. (STEP 102). If the set temperature has not been reached, read the temperature again and repeat until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains in the previous stage 121 (STEP 103). If the board | substrate 2 remains, it waits until the board | substrate 2 is removed. When the board | substrate 2 does not remain, the jet of gas from the inlet stage 118 and the previous stage 121 is started (STEP 104). And the board | substrate 2 is conveyed to the position of the previous stage 121 (STEP 105). When the substrate 2 reaches the position of the previous stage 121, the jet of gas from the previous stage 121 is stopped, the previous stage 121 rises to support the substrate 2, and the previous stage 121. Suction is started to adsorb and fix the substrate 2 (STEP 106).

When it is fixed to the previous stage 121, the temperature of the application stage 122 is read (STEP 107), and it is determined whether or not it is within a range of the set temperature (STEP 108). If the set temperature has not been reached, the temperature is read again and controlled until the set temperature is reached while controlling the substrate 2 fixed to the previous stage 121 so that the temperature becomes constant (STEP 110). When the set temperature is reached, it is determined whether or not the substrate 2 remains in the coating stage 122 (STEP 109). When the board | substrate 2 remains, while controlling so that temperature may become constant with respect to the board | substrate 2 fixed to the previous stage 121 (STEP 110), it waits until the board | substrate 2 is removed. When the substrate 2 is not left, the ejection of the gas from the coating stage 122 is started (STEP 111). Then, the suction of the previous stage 121 is stopped, the previous stage 121 descends, and the ejection of the gas from the previous stage 121 is started (STEP 112). Then, the board | substrate 2 is conveyed to the position of the application | coating stage 122 (STEP 113). When the substrate 2 reaches the position of the application stage 122, the ejection of gas from the application stage 122 is stopped, the application stage 122 rises to support the substrate 2, and the application stage 122 is applied. Suction is started to adsorb and fix the substrate 2 (STEP 114).

In the application stage 122, the liquid material 4 is applied by the discharge device 102 (STEP 115). When application | coating is complete | finished, the temperature of the intermediate | middle stage 119 and the later stage 123 is read (STEP 116), and it is judged whether it exists in the range of a set temperature (STEP 117). If the set temperature is not reached, the temperature is read again and controlled until the set temperature is reached while controlling the temperature of the substrate 2 fixed to the coating stage 122 to be constant (STEP 119). When the set temperature is reached, it is determined whether or not the substrate 2 remains in the later stage 123 (STEP 118). When the board | substrate 2 remains, it waits until the board | substrate 2 is removed, controlling so that temperature may become constant with respect to the board | substrate 2 fixed to the application | coating stage 122 (STEP 119). When the substrate 2 is not left, the ejection of gas from the intermediate stage 119 and the later stage 123 is started (STEP 120). Then, the suction of the coating stage 122 is stopped, the coating stage 122 is lowered, and the ejection of the gas from the coating stage 122 is started (STEP 121). Then, the board | substrate 2 is conveyed to the position of the post-stage 123 (STEP 122). When the substrate 2 reaches the position of the post stage 123, the jet of gas from the post stage 123 is stopped, the post stage 123 is raised to support the substrate 2, and the post stage 123 is provided. Suction is started to adsorb and fix the substrate 2 (STEP 123).

After being fixed to the stage 123, the temperature of the outlet stage 120 is read (STEP 124), and it is determined whether or not it is within the set temperature range (STEP 125). If the set temperature has not been reached, the temperature is read again and controlled until the set temperature is reached while controlling the substrate 2 fixed to the stage 123 so that the temperature becomes constant (STEP 127). When the set temperature is reached, it is determined whether the substrate 2 can be carried out of the apparatus 101 (STEP 126). If it cannot be carried out, the substrate 2 fixed to the stage 123 is controlled so as to have a constant temperature (STEP 127), and waits until the carrying out is possible. When carrying out is possible, the blowing of the gas from the carrying out stage 120 is started (STPE 128). Then, the suction of the rear stage 123 is stopped, the rear stage 123 is lowered, and the ejection of the gas from the rear stage 123 is started (STEP 129). Then, the board | substrate 2 is conveyed out of the apparatus 101 (STEP 130).

Although the above-mentioned operation | movement showed the flow with respect to one board | substrate 2, it is natural that it can apply also to several board | substrate 2 continuously. In this case, since each operation from STEP 101 to STEP 106, STEP 107 to STEP 114, STEP 115 to STEP 123, and STEP 124 to STEP 130 can be performed independently, each operation can be performed in parallel. As a result, the time required for the process treatment can be shortened.

[Example 2]

In Example 1, although the flow path in the heating block 11 is comprised separately by the negative pressure system 15 and the pressurization system 16, this can be comprised by one flow path. 13 is a sectional view of principal parts of the heating mechanism according to the second embodiment, and a block diagram of FIG. 14, respectively.

Since the heating block 201 in Example 2 has a substantially rectangular parallelepiped shape, the upper surface 202 which opposes a board | substrate becomes a surface of about the same width as the magnitude | size of the board | substrate 2. As shown in FIG. The plurality of distribution ports 203 are opened evenly at regular intervals on the upper surface 202. Each flow port 203 communicates with a flow path 204 built into the heating block 201. The flow path 204 communicates with the switching valve 205 provided at a place different from the heating block 201, and communicates with the negative pressure source 206 and the pressurizing source 207 via the switching valve 205. By switching this switching valve 205 and communicating either the negative pressure source 206 or the pressurization source 207 with the flow path 204, the gas in the flow path 204 can be aspirated, or gas can be blown in into a flow path. . A plurality of switching valves 205 may be provided corresponding to the strength of the pressure of the negative pressure source 206 or the pressure source 207. The other heater 21, the temperature sensor 22, the lifting mechanism 24, etc. are the same as that of Example 1. FIG.

When the heating block 201 is in the raised position, the switching valve 205 communicates the flow path 204 and the negative pressure source 206 in the heating block 201. Thereby, gas is attracted from the flow path 204 in the heating block 201 and the flow port 203 which communicates with the other end. The board | substrate 2 is located in the nearest upper part of the distribution port 203, and the board | substrate 2 is adsorbed by the suction action from the distribution port 203, and the upper surface 202 of the heating block and the board | substrate 2 ) Bottom surface is in close contact. As such, the bottom surface of the substrate 2 comes into contact with the top surface 202 of the heating block, so that heat from the heater is directly and quickly transmitted through the heating block 201. And the temperature of the board | substrate 2 can be kept constant by controlling a heater so that temperature may become constant by the temperature control part 208. FIG.

When the heating block 201 is in the lowered position, the switching valve 205 communicates the flow path 204 and the pressure source 207 in the heating block 201. Then, gas is blown out from the flow path 204 in the heating block 201 and the flow port 203 which communicates with the other end. Since the flow port 203 is spaced apart from the substrate 2, the gas flows out toward the bottom surface of the substrate 2. The blown gas is heated by the heater in the heating block 201, and heat is transferred to the substrate 2 by the heated gas. The temperature of the substrate 2 can be kept constant by controlling the heater so that the temperature is constant by the temperature control unit 208.

Moreover, according to the heating block 201 of this embodiment, by using a flow path as a system, a valve, piping, etc. which go through it can be reduced, and space saving can be realized.

1: workpiece (semiconductor chip) 2: substrate
3: connection part (protrusion type electrode, electrode pad) 4: liquid resin, liquid material
11: heating block 12: surface facing the substrate (top surface)
13: 1st flow opening (suction opening) 14: 2nd flow opening (suction opening)
15: first euro 16: second euro
17: first valve 18: second valve
19: negative pressure source 20: pressure source
21: heater 22: temperature sensor
23: temperature control unit 24: lifting mechanism
25: pipe joint 26: flow of gas to be sucked
27: flow of blowing gas 101: coating device
102: discharge device 103: XYZ drive mechanism
104: conveyance mechanism 105: substrate heating mechanism
106: substrate pressurizing member 107: storage container
108: nozzle 109: rail-shaped member
110: roller 111: belt
112: substrate conveyance direction 113: drive direction
114: left conveying unit 115: center conveying unit
116: right conveying unit
118: left auxiliary heating unit (inlet stage)
119: central auxiliary heating unit (middle stage)
120: right auxiliary heating unit (outlet stage)
121: left heating unit (all stages)
122: central heating unit (application stage)
123: right heating unit (after stage)
124: control unit 201: heating block
202: surface facing the substrate (upper surface) 203: distribution port
204: Euro 205: switching valve
206: negative pressure source 207: pressure source
208: temperature control unit 209: gas flow

Claims (15)

As a board | substrate heating apparatus for heating the board | substrate conveyed in one direction and the application | coating operation | work performed to the workpiece arrange | positioned on it in the middle of conveyance from the lower side,
A heating member provided with a flat upper surface which contacts the bottom surface of the substrate and heats the substrate, and is provided on the upper surface, and has an opening for blowing on the bottom surface of the substrate for ejecting a heating gas; Substrate heating device comprising a lifting mechanism to make. The method of claim 1,
The heating member has a suction opening on its upper surface for applying a suction force to the bottom surface of the substrate,
At the rising position of the lifting mechanism, a suction force is applied from the suction opening, the upper surface of the heating member is brought into contact with the bottom surface of the substrate, and the substrate is heated. The substrate heating apparatus which heats the said board | substrate by blowing the gas heated from the opening for dragons. The method of claim 2,
The ejection opening and the suction opening are constituted by the same opening, and the opening is connected to a negative pressure source and a pressurizing source via a switching valve. 4. The method according to any one of claims 1 to 3,
And a plurality of openings. The method according to any one of claims 1 to 4,
The said heating member is a board | substrate heating apparatus provided continuously in the conveyance direction of the said board | substrate. The method of claim 5,
The said heating member is a board | substrate heating apparatus comprised by the several kind of heating block from which a length differs. The substrate heating apparatus in any one of Claims 1-6;
A discharge device for discharging the liquid material;
A drive mechanism for relatively moving said discharge device with respect to said substrate;
A conveying mechanism for conveying the substrate in one direction; And
Control unit controlling their operation
Liquid material applying apparatus comprising a. The method of claim 7, wherein
The control unit,
When carrying out the coating operation on the workpiece placed on the substrate, the upper surface of the heating member is brought into contact with the bottom surface of the substrate with the elevating mechanism in the raised position.
The liquid material application apparatus which ejects the heated gas from the said jet port by making the said lifting mechanism into a lowered position at the time of conveyance of the said board | substrate. As a board | substrate heating method for heating the board | substrate conveyed in one direction and the application | coating work | work performed with respect to the workpiece arrange | positioned on it in the middle from below,
A contact heating step of heating the substrate by bringing a flat upper surface of the heating member into contact with the bottom surface of the substrate by a lifting mechanism; And
A non-contact heating step of ejecting a heating gas from a blowing opening formed in an upper surface of the heating member by separating the bottom surface of the substrate from the upper surface of the heating member by the elevating mechanism.
Substrate heating method comprising a. 10. The method of claim 9,
In the contact heating step, a suction force is applied from a suction opening formed on an upper surface of the heating member. The method of claim 10,
The ejection opening and the suction opening are constituted by the same opening, and the opening is connected to a negative pressure source and a pressurizing source through a switching valve,
In the contact heating step, the opening and the negative pressure source communicate with each other,
In the non-contact heating step, the opening is in communication with the pressure source. 12. The method according to any one of claims 9 to 11,
The said contact heating process is performed when an application | coating operation | work is performed to the workpiece | work arrange | positioned on the said board | substrate, and the said non-contact heating process is performed at the time of conveyance of the said board | substrate. The method of claim 12,
The substrate heating method which performs the said non-contact heating process before and behind the said coating operation. The method according to claim 12 or 13,
The coating operation is an underfill process, the substrate heating method. The method of claim 14,
The substrate heating method of heating the bottom surface of the said board | substrate uniformly in the said contact heating process and the said non-contact heating process.
KR1020117002267A 2008-07-04 2009-07-02 Substrate heating apparatus, liquid material applying apparatus provided with substrate heating apparatus, and substrate heating method KR101568238B1 (en)

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JP2008176071A JP5465846B2 (en) 2008-07-04 2008-07-04 Substrate heating apparatus, liquid material coating apparatus including the same, and substrate heating method
JPJP-P-2008-176071 2008-07-04

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US9029740B2 (en) * 2013-01-15 2015-05-12 Nordson Corporation Air impingement heater
EP3524362A4 (en) 2016-10-07 2020-06-17 Musashi Engineering, Inc. Liquid material discharge device with temperature control device, application device for same, and application method
WO2023082170A1 (en) * 2021-11-12 2023-05-19 Illinois Tool Works Inc. Multi-pattern tooling plate
CN116504686B (en) * 2023-06-28 2023-10-20 北京中科科美科技股份有限公司 Semiconductor heating plate based on liquid uniform temperature control

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TW201006568A (en) 2010-02-16
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KR101568238B1 (en) 2015-11-20
WO2010001608A1 (en) 2010-01-07

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