KR20100065831A - Etching method of metal layer - Google Patents
Etching method of metal layer Download PDFInfo
- Publication number
- KR20100065831A KR20100065831A KR1020080124397A KR20080124397A KR20100065831A KR 20100065831 A KR20100065831 A KR 20100065831A KR 1020080124397 A KR1020080124397 A KR 1020080124397A KR 20080124397 A KR20080124397 A KR 20080124397A KR 20100065831 A KR20100065831 A KR 20100065831A
- Authority
- KR
- South Korea
- Prior art keywords
- metal plate
- etching
- weight
- photoresist film
- photoresist
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for etching a metal plate in which the surface can be made uniform by removing fine holes or the like after etching, and the fine holes and the like removed after the etching.
The present invention to achieve the above object is a process of forming a photoresist film in a predetermined pattern by applying a photoresist on the surface of the metal plate and then exposed,
10-20% by weight of nitric acid, 10-20% by weight of sulfuric acid, 15-25% by weight of copper nitrate, 5-15% by weight of chloric acid, 3-7% by weight of ferric chloride, according to the pattern of the photoresist film, pure water 25 First etching by exposure to an etchant consisting of ˜40% by volume,
Removing the photoresist film and washing the metal plate and exposing the washed metal plate to the etching solution to perform secondary etching;
And polishing or heat-treating the surface of the etched metal plate to remove fine pores formed on the metal plate surface.
Description
The present invention relates to an etching method for forming a character or an image pattern on the surface of a metal plate.
In general, a technique of forming a predetermined pattern on the surface of a metal plate using a photolithography method is performed by applying a photoresist to the surface of the metal plate to form a photoresist film, then placing a mask pattern on the photoresist film and exposing the photoresist film. . Thereafter, the developer is subjected to a process of removing the unexposed portion of the photoresist film and drying it. Subsequently, the metal film is subsequently immersed in an etching solution so that the surface of the metal plate is etched in a predetermined pattern, and then the surface of the metal plate is cleaned.
However, when the metal plate is etched by using the photolithography method, there is a problem that the surface of the metal plate is damaged due to the etching liquid flowing into an unwanted place under the influence of minute holes or the like formed in the photoresist film.
In addition, the surface of the metal plate is damaged during the etching process, thereby deteriorating the quality of the product.
The present invention has been made in order to solve the above problems, and after forming a predetermined letter or pattern on the surface of the metal plate by etching, the surface of the metal plate is subjected to a polishing or heat treatment process by etching the surface of the metal plate by etching Remove the formed micro voids.
In order to achieve the above object, the etching method of the metal plate of the present invention is a process of forming a photoresist film in a predetermined pattern by applying a photoresist on the surface of the metal plate and then exposing it;
10-20% by weight of nitric acid, 10-20% by weight of sulfuric acid, 15-25% by weight of copper nitrate, 5-15% by weight of chloric acid, 3-7% by weight of ferric chloride, according to the pattern of the photoresist film, pure water 25 First etching by exposure to an etchant consisting of ˜40% by volume,
Removing the photoresist film and washing the metal plate and exposing the washed metal plate to the etching solution to perform secondary etching;
And polishing or heat-treating the surface of the etched metal plate to remove fine pores formed on the metal plate surface.
The etching method of the metal plate of this invention is a process of primary etching after forming a photoresist film on the surface of a metal plate,
Washing the first etched metal plate and then performing second etching,
After the first and second etching is completed by removing the fine pores formed on the surface of the metal plate in the etching process by heat treatment or surface polishing method,
The surface of the metal plate on which the letters or patterns are formed is smoothly formed, and the effect of preventing foreign matter from entering and contaminating the micropores on the surface can be obtained.
Hereinafter, the technical configuration and operation of the present invention will be described in detail with reference to FIG. 1.
First, a mask pattern for expressing a character or an image to be formed on a metal plate surface is manufactured.
Subsequently, the
Subsequently, as shown in FIG. 1B, a
Subsequently, after removing the mask pattern as shown in FIG. 1C, 10 to 20 wt% of nitric acid, 10 to 20 wt% of sulfuric acid, 15 to 25 wt% of copper nitrate, 5 to 15 wt% of chloric acid, and 3 to 7 wt% of ferric chloride, The
Subsequently, as shown in FIG. 1D, after removing the photoresist film on the
Subsequently, the surface of the metal plate on which the secondary etching is completed is uniformly polished around 3 μm using a polishing machine, or heat-treated at a predetermined temperature to smoothly treat the corroded surface in the secondary etching process.
The polishing and heat treatment steps may be selectively performed in any one step or both.
Instead of using a photoresist film, the etching process of the said metal plate may use the method of making a screen using a photosensitive emulsion, and screen-printing a resist film on the surface of a metal plate using the said screen. This method does not require the use of a photoresist film as a resist film because a predetermined pattern is printed on the surface of the metal plate by the screen.
According to the present invention, the surface of the etched metal plate can be made uniform through the above steps, and fine holes and the like of the surface are removed, thereby improving appearance and quality.
The metal plate etching method of the present invention described above is not limited to the illustrated structure and description, and may be variously modified within the scope of the claims and objects of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the etching method of the metal plate of this invention.
<Explanation of symbols for the main parts of the drawings>
10-metal plate 20-photoresist film
30 -mask pattern
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080124397A KR20100065831A (en) | 2008-12-09 | 2008-12-09 | Etching method of metal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080124397A KR20100065831A (en) | 2008-12-09 | 2008-12-09 | Etching method of metal layer |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20100065831A true KR20100065831A (en) | 2010-06-17 |
Family
ID=42365003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080124397A KR20100065831A (en) | 2008-12-09 | 2008-12-09 | Etching method of metal layer |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20100065831A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101040625B1 (en) * | 2010-08-18 | 2011-06-10 | (주)휴메릭 | Hot melt type 3 layer clad manufcturing method and 3 layer clad goods thereof |
KR102188249B1 (en) | 2020-06-12 | 2020-12-09 | 임서현 | Metal case and modifying method thereof |
-
2008
- 2008-12-09 KR KR1020080124397A patent/KR20100065831A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101040625B1 (en) * | 2010-08-18 | 2011-06-10 | (주)휴메릭 | Hot melt type 3 layer clad manufcturing method and 3 layer clad goods thereof |
KR102188249B1 (en) | 2020-06-12 | 2020-12-09 | 임서현 | Metal case and modifying method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102240445B1 (en) | Manufacturing method of thin-film glass for L chamfer type cover window | |
JP2015534098A5 (en) | ||
JP2003507765A (en) | Exposure during rework for improved resist removal | |
KR20100065831A (en) | Etching method of metal layer | |
JP2016206670A5 (en) | ||
TWI582529B (en) | Process enhancing safe sraf printing using etch aware print avoidance | |
JP2009295745A (en) | Method for manufacturing semiconductor device | |
JP2000306795A (en) | Manufacture of semiconductor | |
TW201312647A (en) | Method of forming an etch mask | |
JPH07335519A (en) | Formation of pattern | |
JP2009105248A (en) | Pattern formation method | |
US3668029A (en) | Chemical machining process | |
KR101383893B1 (en) | Method for forming patterns of substrate | |
RU2195047C2 (en) | Photoresist mask generation process | |
KR101168393B1 (en) | Forming method of fine pattern using double exposure process | |
KR100422956B1 (en) | Method for forming fine pattern | |
KR100271216B1 (en) | Method of fabricating printed circuit board using dry film resist | |
JPS63296221A (en) | Formation of resist pattern | |
TW201301342A (en) | Method for forming pattern, and pattern structure | |
JPH0353587A (en) | Formation of resist pattern | |
JP4322482B2 (en) | Method for forming fine resist pattern and method for manufacturing semiconductor device | |
TW201907232A (en) | Micron-scale imprinting mold and manufacturing method thereof including a chromium film layer forming step, a photoresist coating step, an exposure and development step, a chromium film etching step and a substrate etching step | |
KR0163528B1 (en) | Manufacture of mask for marking | |
JPH11154634A (en) | Manufacture of semiconductor device and device therefor | |
JPH1025581A (en) | Production of etched parts |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |