KR20100065831A - Etching method of metal layer - Google Patents

Etching method of metal layer Download PDF

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Publication number
KR20100065831A
KR20100065831A KR1020080124397A KR20080124397A KR20100065831A KR 20100065831 A KR20100065831 A KR 20100065831A KR 1020080124397 A KR1020080124397 A KR 1020080124397A KR 20080124397 A KR20080124397 A KR 20080124397A KR 20100065831 A KR20100065831 A KR 20100065831A
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KR
South Korea
Prior art keywords
metal plate
etching
weight
photoresist film
photoresist
Prior art date
Application number
KR1020080124397A
Other languages
Korean (ko)
Inventor
송홍섭
Original Assignee
송홍섭
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 송홍섭 filed Critical 송홍섭
Priority to KR1020080124397A priority Critical patent/KR20100065831A/en
Publication of KR20100065831A publication Critical patent/KR20100065831A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for etching a metal plate in which the surface can be made uniform by removing fine holes or the like after etching, and the fine holes and the like removed after the etching.

The present invention to achieve the above object is a process of forming a photoresist film in a predetermined pattern by applying a photoresist on the surface of the metal plate and then exposed,

10-20% by weight of nitric acid, 10-20% by weight of sulfuric acid, 15-25% by weight of copper nitrate, 5-15% by weight of chloric acid, 3-7% by weight of ferric chloride, according to the pattern of the photoresist film, pure water 25 First etching by exposure to an etchant consisting of ˜40% by volume,

Removing the photoresist film and washing the metal plate and exposing the washed metal plate to the etching solution to perform secondary etching;

And polishing or heat-treating the surface of the etched metal plate to remove fine pores formed on the metal plate surface.

Description

Etching method of metal layer

The present invention relates to an etching method for forming a character or an image pattern on the surface of a metal plate.

In general, a technique of forming a predetermined pattern on the surface of a metal plate using a photolithography method is performed by applying a photoresist to the surface of the metal plate to form a photoresist film, then placing a mask pattern on the photoresist film and exposing the photoresist film. . Thereafter, the developer is subjected to a process of removing the unexposed portion of the photoresist film and drying it. Subsequently, the metal film is subsequently immersed in an etching solution so that the surface of the metal plate is etched in a predetermined pattern, and then the surface of the metal plate is cleaned.

However, when the metal plate is etched by using the photolithography method, there is a problem that the surface of the metal plate is damaged due to the etching liquid flowing into an unwanted place under the influence of minute holes or the like formed in the photoresist film.

In addition, the surface of the metal plate is damaged during the etching process, thereby deteriorating the quality of the product.

The present invention has been made in order to solve the above problems, and after forming a predetermined letter or pattern on the surface of the metal plate by etching, the surface of the metal plate is subjected to a polishing or heat treatment process by etching the surface of the metal plate by etching Remove the formed micro voids.

In order to achieve the above object, the etching method of the metal plate of the present invention is a process of forming a photoresist film in a predetermined pattern by applying a photoresist on the surface of the metal plate and then exposing it;

10-20% by weight of nitric acid, 10-20% by weight of sulfuric acid, 15-25% by weight of copper nitrate, 5-15% by weight of chloric acid, 3-7% by weight of ferric chloride, according to the pattern of the photoresist film, pure water 25 First etching by exposure to an etchant consisting of ˜40% by volume,

Removing the photoresist film and washing the metal plate and exposing the washed metal plate to the etching solution to perform secondary etching;

And polishing or heat-treating the surface of the etched metal plate to remove fine pores formed on the metal plate surface.

The etching method of the metal plate of this invention is a process of primary etching after forming a photoresist film on the surface of a metal plate,

Washing the first etched metal plate and then performing second etching,

After the first and second etching is completed by removing the fine pores formed on the surface of the metal plate in the etching process by heat treatment or surface polishing method,

The surface of the metal plate on which the letters or patterns are formed is smoothly formed, and the effect of preventing foreign matter from entering and contaminating the micropores on the surface can be obtained.

Hereinafter, the technical configuration and operation of the present invention will be described in detail with reference to FIG. 1.

First, a mask pattern for expressing a character or an image to be formed on a metal plate surface is manufactured.

Subsequently, the photoresist film 20 is applied to the metal plate 10 made of stainless material with a predetermined thickness by using a spin coating method as shown in FIG. 1A.

Subsequently, as shown in FIG. 1B, a mask pattern 30 manufactured in the shape of a problem image or the like is placed on the photoresist film 20 and irradiated with ultraviolet rays to expose the exposed photoresist film 20 portion of the mask pattern.

Subsequently, after removing the mask pattern as shown in FIG. 1C, 10 to 20 wt% of nitric acid, 10 to 20 wt% of sulfuric acid, 15 to 25 wt% of copper nitrate, 5 to 15 wt% of chloric acid, and 3 to 7 wt% of ferric chloride, The metal plate 10 is first etched to a predetermined depth (about 20 to 150 µm) with an etching solution composed of 25 to 40% by weight of pure water.

Subsequently, as shown in FIG. 1D, after removing the photoresist film on the metal plate 10 on which the primary etching is completed, the second surface is etched by about 5 to 10 μm.

Subsequently, the surface of the metal plate on which the secondary etching is completed is uniformly polished around 3 μm using a polishing machine, or heat-treated at a predetermined temperature to smoothly treat the corroded surface in the secondary etching process.

The polishing and heat treatment steps may be selectively performed in any one step or both.

Instead of using a photoresist film, the etching process of the said metal plate may use the method of making a screen using a photosensitive emulsion, and screen-printing a resist film on the surface of a metal plate using the said screen. This method does not require the use of a photoresist film as a resist film because a predetermined pattern is printed on the surface of the metal plate by the screen.

According to the present invention, the surface of the etched metal plate can be made uniform through the above steps, and fine holes and the like of the surface are removed, thereby improving appearance and quality.

The metal plate etching method of the present invention described above is not limited to the illustrated structure and description, and may be variously modified within the scope of the claims and objects of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the etching method of the metal plate of this invention.

<Explanation of symbols for the main parts of the drawings>

10-metal plate 20-photoresist film

30 -mask pattern

Claims (1)

Applying a photoresist to the surface of the metal plate and then exposing the photoresist to form a photoresist film in a predetermined pattern; 10-20% by weight of nitric acid, 10-20% by weight of sulfuric acid, 15-25% by weight of copper nitrate, 5-15% by weight of chloric acid, 3-7% by weight of ferric chloride, according to the pattern of the photoresist film, pure water 25 First etching by exposure to an etchant consisting of ˜40% by volume, Removing the photoresist film and washing the metal plate and exposing the washed metal plate to the etching solution to perform secondary etching; And polishing or heat-treating the surface of the etched metal plate to remove fine voids formed on the surface of the metal plate.
KR1020080124397A 2008-12-09 2008-12-09 Etching method of metal layer KR20100065831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080124397A KR20100065831A (en) 2008-12-09 2008-12-09 Etching method of metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080124397A KR20100065831A (en) 2008-12-09 2008-12-09 Etching method of metal layer

Publications (1)

Publication Number Publication Date
KR20100065831A true KR20100065831A (en) 2010-06-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080124397A KR20100065831A (en) 2008-12-09 2008-12-09 Etching method of metal layer

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Country Link
KR (1) KR20100065831A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101040625B1 (en) * 2010-08-18 2011-06-10 (주)휴메릭 Hot melt type 3 layer clad manufcturing method and 3 layer clad goods thereof
KR102188249B1 (en) 2020-06-12 2020-12-09 임서현 Metal case and modifying method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101040625B1 (en) * 2010-08-18 2011-06-10 (주)휴메릭 Hot melt type 3 layer clad manufcturing method and 3 layer clad goods thereof
KR102188249B1 (en) 2020-06-12 2020-12-09 임서현 Metal case and modifying method thereof

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