KR20100021539A - High efficiency solar cells - Google Patents

High efficiency solar cells Download PDF

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KR20100021539A
KR20100021539A KR1020080080214A KR20080080214A KR20100021539A KR 20100021539 A KR20100021539 A KR 20100021539A KR 1020080080214 A KR1020080080214 A KR 1020080080214A KR 20080080214 A KR20080080214 A KR 20080080214A KR 20100021539 A KR20100021539 A KR 20100021539A
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South Korea
Prior art keywords
solar cell
film
electric field
high efficiency
photovoltaic
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KR1020080080214A
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Korean (ko)
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KR101411996B1 (en
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위순임
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다이나믹솔라디자인 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: High efficiency solar cells are provided to prevent the recombination of an electron-hole pair for high energy conversion efficiency by applying a bias voltage to the solar cells. CONSTITUTION: A photoelectro-motive force generator(22) generates an electric charge by light absorption. Electrodes(24, 26) with different polarities are included the photoelectro-motive force generator. The electrodes outputs a photoelectro-motive force from the photoelectro-motive force generator to an external load. A bias electrode(34) applies electric field to the photoelectro-motive force generator.

Description

High Efficiency Solar Cells {HIGH EFFICIENCY SOLAR CELLS}

The present invention relates to a solar cell, and in particular, by applying a bias voltage to the solar cell so that the charge generated by the light is rapidly flowed and collected, the high energy conversion efficiency can be obtained by preventing the recombination of the electron-hole pair as much as possible. An improved high efficiency solar cell is provided.

Photovoltaic power generation is an infinite clean power generation technology that produces electricity from sunlight. The photovoltaic power generation system is a solar cell (module) that generates electricity by receiving sunlight, and a peripheral device such as a power regulator for converting the generated direct current electricity into alternating current and a storage battery for storing the generated electricity. It consists of. Solar cells are basically diodes composed of pn junctions, and are classified into various types according to materials used as light absorbing layers. Solar cells using silicon as a light absorption layer are classified into crystalline substrate type solar cells and thin film type solar cells. In addition, CdTe or CIS (CuInSe2) compound thin film solar cell, group III-V solar cell, dye-sensitized solar cell and organic solar cell are the representative solar cells.

Thin film solar cells may be silicon based, CuInSe 2 based or CdTe thin film solar cells depending on the light absorbing layer material used. The advantage of such thin film solar cells is that they can be used on low-cost substrates such as glass or metal plates instead of expensive silicon substrates. It is possible to manufacture solar cells at low cost by minimizing material consumption through thin film deposition inside and outside the micron. Another advantage is that large-area modules can be manufactured using an in-line process to improve productivity and reduce manufacturing costs. Types of silicon thin film solar cells are classified into various types according to the thin film deposition temperature, the type of substrate used (glass, metal plate, ceramic, silicon substrate, etc.) and the deposition method. Depending on the crystal characteristics of the light absorbing layer, it is classified into amorphous and crystalline silicon thin film solar cells, and the crystalline silicon thin film solar cells are again classified according to the crystal size and the thickness of the light absorbing layer.

Amorphous silicon (a-Si: H) thin-film solar cells have a very low diffusion length of carriers due to the properties of the material itself compared to monocrystalline (or polycrystalline) silicon substrates. The collection efficiency of electron-hole pairs is very low. Therefore, in general, an amorphous silicon thin film solar cell has a pin structure in which a light absorbing layer composed of an intrinsic semiconductor layer to which impurities are not added is inserted between a p-type semiconductor layer having a high doping concentration and an n-type semiconductor layer. In this structure, the light absorbing layer is depleted by the p and n layers having high doping concentrations above and below, and an electric field is generated therein. Therefore, the electron-hole pairs generated from the light absorbing layer by the incident light are collected into the n-layer and p-layer by the drift by the internal electric field rather than by diffusion, and generate current.

In an ideal device, an electric field is generated uniformly inside, so that an electron-hole pair flows smoothly. In real devices, however, defects present in the light absorbing layer increase the space charge density at the pi and ni interfaces and decrease the electric field in the light absorbing layer. In general, when the solar cell is exposed to light, a deterioration characteristic (Staebler-Wronski Effect) appears, and the solar cell characteristics decrease by up to 30% depending on the thickness and physical properties of the light absorbing layer. Light-soaking also increases the density of dangling bonds in the light absorbing layer and reduces the internal electric field, further accelerating the recombination of electron-hole pairs generated by light, which is why the characteristics of solar cells Deterioration occurs.

Meanwhile, nanocrystalline (nc-Si: H) silicon thin film solar cells use nanocrystalline silicon, commonly called microcrystalline silicon (μc-Si: H), as a light absorbing layer as a boundary material between amorphous and single crystal silicon. do. Nanocrystalline silicon has a crystal size of several tens of nm to hundreds of nm depending on the deposition method, the amorphous boundary is often present in the grain boundary and most carrier recombination occurs in the crystal boundary due to the high bonding density. However, there is no deterioration phenomenon that occurs in amorphous silicon thin film solar cell. The nanocrystalline silicon thin film solar cell is also manufactured in the same pin structure as the amorphous silicon thin film solar cell, which has a small grain size of nanocrystalline silicon and contains a large number of amorphous matrices. Although larger than silicon, the np structure alone is not enough to collect carriers by diffusion.

In terms of the price of each component of the photovoltaic system, modules (60%), peripheral devices (25%) and installation costs (15%) are known to account for the largest share of the total system price. The module price, which accounts for 60% of the total system price, consists of the substrate (40%, silicon), the solar cell manufacturing process (25%), and module assembly (35%). Given that the market share of silicon substrate solar cells is very high, the current high price of the photovoltaic system is due to the high price of the solar module, that is, the high price share of the silicon substrate constituting the solar cell. The biggest problem that PV technology currently sits on is the high cost of power generation due to the high price of the system, which is the biggest obstacle to the widespread deployment of PV power. Therefore, energy conversion efficiency is very important for solar cells.

SUMMARY OF THE INVENTION An object of the present invention is to provide an improved high efficiency solar cell that can obtain high energy conversion efficiency by preventing the recombination of electron-hole pairs as much as possible by applying a bias voltage to the solar cell so that the charge generated by the light is flowed and collected quickly. have.

One aspect of the present invention for achieving the above technical problem relates to a high efficiency solar cell. A high efficiency solar cell of the present invention includes: a photovoltaic power generation unit generating charges by light absorption; First and second electrodes having different polarities for outputting photovoltaic power generated by the photovoltaic generator to an external load; And a bias electrode for applying an electric field added to the photovoltaic generator, wherein charges generated in the photovoltaic generator are caused by an added electric field due to an internal electric field and a bias voltage applied to the bias electrode. By being flowed and collected more quickly toward the second electrode, high energy conversion efficiency can be obtained by preventing recombination of the electron-hole pair.

In one embodiment, an insulating film for electrically insulating the bias electrode.

In example embodiments, the photovoltaic generator may include a light absorbing layer having a multi-layer structure in which an intrinsic amorphous semiconductor film and an intrinsic microcrystalline semiconductor film are alternately repeated.

In one embodiment, the photovoltaic generator comprises a heterojunction with Intrinsic Thin-layer (HIT) structure.

In one embodiment, the first and second electrodes have an integrated backside contact (IBC) structure.

In one embodiment, the photovoltaic generation unit includes an antireflection film of a multi-layered structure in which one porous antireflection film or two or more porous antireflection films overlap.

According to the high-efficiency solar cell of the present invention, the charge generated by the bias voltage applied to the bias electrode is rapidly flowed and collected to prevent the recombination of the electron-hole pair as much as possible to obtain high energy conversion efficiency. The high efficiency solar cell of the present invention can be applied to all kinds of amorphous or crystalline silicon thin film solar cells, or substrate type solar cells using a single crystalline or polycrystalline silicon substrate. In addition, high efficiency solar cells can be realized by adding bias electrodes to CdTe or CIS (CuInSe2) compound thin film solar cells, III-V solar cells, dye-sensitized solar cells, and organic solar cells.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

The general solar cell 10, with reference to FIG. 1, is composed of first and second electrodes 14 and 16 having different polarities from those of the photovoltaic generator 12. The photovoltaic generator 12 generates photovoltaic power in response to the light input, and the generated electromotive force is provided to the external load 18 through the first and second electrodes 14 and 16. The external load 18 is, for example, a force charging device for storing the generated photovoltaic power or a power consuming device for consuming photovoltaic power. Electron-hole pairs generated in the photovoltaic generator 12 in response to light input are mostly generated by the first and second electrodes 14 and 16 by an internal electric field (an electric field generated by depletion of p and n layers). It is collected and drifts toward.

However, electron-electron pairs that are flowed by the internal electric field are recombined for various reasons in the flow process. The higher the recombination rate, the lower the energy conversion efficiency. In order to overcome this problem, the high-efficiency solar cell of the present invention applies the added electric field by the bias voltage to the solar cell so that the charge generated by the light flows rapidly and collects the high energy by preventing the recombination of the electron-hole pair as much as possible. Conversion efficiency can be obtained.

2 is a schematic configuration diagram of a high efficiency solar cell having a bias electrode of the present invention.

Referring to FIG. 2, the high-efficiency solar cell 20 having the bias electrode of the present invention is largely the first and second electrodes 24 and 26 and the bias electrode 34 having different polarities from those of the photovoltaic generator 22. ). An insulating film 32 for electrical insulation is provided between the bias electrode 34 and the second electrode 26. The photovoltaic generator 22 generates photovoltaic power in response to the light input and provides the generated photovoltaic power to the external load 36. In this case, the bias electrode 34 is driven by receiving the bias voltage from the bias power supply 30 to apply the bias voltage to the photovoltaic generator 22. The electron-hole pair generated in the photovoltaic generator 22 is rapidly flowed and collected by the electric field formed by the internal electric field and the applied bias voltage, thereby preventing the electron-hole pair from being recombined as much as possible. The bias power supply 30 basically applies a constant voltage using a DC power supply. Alternatively, an AC power supply may be used to check an AC voltage or a pulse voltage may be applied.

3 to 6 show various embodiments of a high efficiency solar cell.

First, referring to FIG. 3, one of the embodiments of the present invention includes a bias electrode 34 in the thin film solar cell 40 having a pin superstrate structure to implement a high efficiency solar cell. The thin film solar cell 40 deposits a bias electrode 34 on the substrate 47 and an insulating film 32 thereon. The photovoltaic generator 41 is formed on the insulating film 32. The photovoltaic generator 41 has a light absorbing layer 42 (for example, an intrinsic amorphous silicon film) and a first conductive semiconductor film 43 (for example, a p-type) is disposed therebetween. A second conductive semiconductor film 44 (e.g., n-type). The first and second conductivity-type semiconductor films 43 and 44 may be selected from, for example, a-Si or mc-Si or a-Si / mc-Si. The light absorbing layer 42 may be composed of a single film made of an intrinsic amorphous semiconductor film, but may be formed of a multi-layered structure in which an intrinsic amorphous semiconductor film and an intrinsic microcrystalline semiconductor film are alternately repeated. A transparent conductive film 45 is provided as a first electrode on the first conductive semiconductor film 43, and a back reflector 46 is reflected below the second conductive semiconductor film 44. It is composed of a material having high conductivity and reflectance to function as a second electrode with a function, and has a textured structure to increase the reflecting area such as embossing or bending.

When light is incident on the light absorbing layer 42 through the transparent electrode 45 and the first conductive semiconductor film 43, electron-hole pairs are generated, and the first conductive semiconductor film 43 and the second conductive semiconductor film are respectively. Flows separated into 44. In this case, the bias electrode 34 is driven by receiving a voltage from the bias power supply 30 and adds an electric field by the bias voltage to an internal electric field generated between the first and second conductivity-type semiconductor films 43 and 44. . Thus, the generated electron-hole pairs are rapidly flowed apart and collected by the electric field added by the internal electric field and the bias voltage, thereby preventing the electron-hole pairs from being recombined as much as possible.

Referring to FIG. 4, according to another embodiment of the present invention, a bias electrode 34 is provided in the thin film solar cell 50 having a nip substrate structure to implement a high efficiency solar cell. The thin film solar cell 50 having the nip substrate structure basically has the same configuration and operation characteristics as the thin film solar cell 40 having the pin super-straight structure described above. However, since the light incidence is made through the rear surface of the substrate 57, the thin film solar cell 50 having the nip substrate structure has the opposite stacking order of the semiconductor films constituting the photovoltaic generator 51. That is, the transparent conductive film 55 is laminated on the substrate 57 (the substrate is made of a transparent substrate, for example, glass), and the first conductive semiconductor film 53 and the light absorbing layer 52 are stacked thereon. The second conductive semiconductor film 54 is sequentially stacked. And the back reflection film 56 is laminated | stacked. Then, the insulating film 32 and the bias electrode 34 are sequentially stacked.

Referring to FIG. 5, in another embodiment of the present invention, a bias electrode 34 is provided in the crystalline substrate type solar cell 60 having a heterojunction with an intrinsic thin-layer (HIT) structure. Implement solar cells. The substrate-type solar cell 60 of the HIT structure has an intrinsic semiconductor film 69 (for example, intrinsic amorphous silicon) on one surface to which light of a crystalline semiconductor substrate 68 (for example, an n-type single crystal silicon substrate) is incident. Film) and the anti-reflection film 80 are sequentially formed thereon. In order to increase light absorption, the antireflection film 80 is made of porous silicon having a porous structure on a textured surface of a pyramid structure. The anti-reflection film 80 may be composed of one porous anti-reflection film, but may be formed of a multi-layered structure in which two or more porous anti-reflection films having the same refractive index or different from each other in order to increase light absorption.

The photovoltaic generator 61 and the semiconductor films for forming the first and second electrodes are provided adjacent to the rear surface of the substrate 68 at intervals. In order to form the first electrode, an intrinsic semiconductor film 63 (for example, an intrinsic amorphous silicon film) and a first conductivity-type semiconductor film 65 (for example, one region on the back surface of the substrate 68 are sequentially A p-type amorphous silicon film) and a conductive film 67 (for example, a transparent conductive film) serving as the first electrode are laminated. In order to form the second electrode, the intrinsic semiconductor film 62 (for example, an intrinsic amorphous silicon film) and the second conductivity-type semiconductor film 64 (for example, in another region on the back surface of the substrate 68 are sequentially An n-type amorphous silicon film) and a conductive film 66 (for example, a transparent conductive film) serving as a second electrode are laminated. The conductive films 67 and 66 functioning as the first and second electrodes may be formed of, for example, a transparent conductive oxide film (TCO) such as ITO, SnO 2, ZnO, or the like. Although not shown in the drawings, each of the conductive films 67 and 66 may be a collecting electrode, and a metal electrode such as Al or Ag may be formed.

The substrate-type solar cell 60 having the HIT structure has a substrate 68 composed of n-type single crystal silicon and a first conductivity-type semiconductor film 65 composed of p-type amorphous silicon film in order to improve pn junction characteristics. It has a HIT (Heterojunction with Intrinsic Thin-Layer) structure in which an intrinsic semiconductor film 63 composed of an intrinsic amorphous silicon film is provided therebetween. And a BSF including an intrinsic semiconductor film 62 composed of an intrinsic amorphous silicon film and a second conductive semiconductor film 64 composed of an n-type amorphous silicon film on the back surface of the substrate 68 composed of n-type single crystal silicon. (Back Surface Field) structure. Here, the insulating film 32 and the bias electrode 34 are laminated | stacked sequentially.

When light is incident on the substrate 68 through the anti-reflection film 80 and the intrinsic semiconductor layer 69, electron-hole pairs are generated, respectively, to the first conductive semiconductor film 65 and the second conductive semiconductor film 64, respectively. Separate and flow. At this time, the bias electrode 34 is driven by receiving a voltage from the bias power supply 30 and adds an electric field by the bias voltage to an internal electric field generated between the first and second conductivity-type semiconductor films 65 and 64. . Thus, the generated electron-hole pairs are rapidly flowed apart and collected by the electric field added by the internal electric field and the bias voltage, thereby preventing the electron-hole pairs from being recombined as much as possible.

Referring to FIG. 6, in another embodiment of the present invention, the crystalline substrate type solar cell 70 having an integrated backside contact (IBC) structure includes a bias electrode 34 to implement a high efficiency solar cell. do. The substrate type solar cell 70 of the IBC structure is provided with a crystalline semiconductor substrate 78 (for example, an n-type single crystal silicon substrate). Via holes 77 are formed on the substrate 78 from one surface to the other. An intrinsic semiconductor film 72 (eg, an intrinsic amorphous silicon film) is stacked on one side and a back surface of the substrate 78 and a side of the via hole 77, and an intrinsic semiconductor film 72 formed on one surface of the substrate 78. The first conductive semiconductor film 74 (for example, a p-type amorphous silicon film) is formed so as to reach the back surface of the substrate 78 through the upper portion and the via hole 77. A second conductive semiconductor film 73 (for example, an n-type amorphous silicon film) is formed on the back surface of the substrate 78 at intervals around the via hole 77. An antireflection film 80 is formed on the first conductive semiconductor film 74 formed on one surface of the substrate 78. The anti-reflection films 75 and 76 respectively below the second conductivity-type semiconductor film 73 formed on the back surface of the substrate 78 and below the first conductivity-type semiconductor film 78 extending below the via hole 77. ) Is configured. The anti-reflection film 76 stacked below the first conductive semiconductor film 74 under the substrate 78 functions as a first electrode, and the anti-reflection film stacked below the second conductive semiconductor film 73. 75 functions as a second electrode. Although not shown in the drawings, each of the anti-reflection films 76 and 75 may be a collecting electrode, and a metal electrode such as Al or Ag may be formed. The insulating film 32 and the bias electrode 34 are laminated | stacked sequentially under the antireflection film 75 which functions as a 2nd electrode.

When light enters the substrate 78 through the anti-reflection film 80 and the first conductive semiconductor layer 74, electron-hole pairs are generated, and the first conductive semiconductor film 74 and the second conductive semiconductor film ( 73) and flow separately. In this case, the bias electrode 34 is driven by receiving a voltage from the bias power supply 30 and adds an electric field by the bias voltage to an internal electric field generated between the first and second conductivity-type semiconductor films 74 and 73. . Thus, the generated electron-hole pairs are rapidly flowed apart and collected by the electric field added by the internal electric field and the bias voltage, thereby preventing the electron-hole pairs from being recombined as much as possible.

The high efficiency solar cell of the present invention as described above can be applied to all kinds of amorphous or crystalline silicon thin film solar cells or substrate type solar cells using a single crystalline or polycrystalline silicon substrate in addition to the above-described embodiments. In addition, high efficiency solar cells can be realized by adding bias electrodes to CdTe or CIS (CuInSe2) compound thin film solar cells, III-V solar cells, dye-sensitized solar cells, and organic solar cells.

Embodiments of the highly efficient solar cell of the present invention described above are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. Could be. Therefore, it will be understood that the present invention is not limited only to the form mentioned in the above detailed description. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

1 is a schematic configuration diagram of a general solar cell.

2 is a schematic configuration diagram of a high efficiency solar cell having a bias electrode of the present invention.

3 to 6 show various embodiments of a high efficiency solar cell.

* Description of the symbols for the main parts of the drawings *

10: solar cell 12: photovoltaic power generation unit

14: first electrode 16: second electrode

18: load 20: solar cell

22: photovoltaic power generation unit 24: first electrode

26: second electrode 30: bias power supply

32: insulating film 34: bias electrode

36: load 40: solar cell

41: photovoltaic generator 42: light absorbing layer

43: first conductive semiconductor film 44: second conductive semiconductor film

45: transparent conductive film 46: rear reflective film

47: substrate 50: solar cell

51: photovoltaic generator 52: light absorbing layer

53: first conductive semiconductor film 54: second conductive semiconductor film

55: transparent conductive film 56: back reflecting film

57: substrate 60: solar cell

61: photovoltaic generator 62: intrinsic semiconductor film

63: intrinsic semiconductor film 64: second conductive semiconductor film

65: first conductive semiconductor film 66: conductive film

67: conductive film 68: crystalline semiconductor substrate

69: intrinsic semiconductor film 70: solar cell

71: photovoltaic generator 72: intrinsic semiconductor layer

73: second conductive semiconductor film 74: first conductive semiconductor film

75: antireflection film 76: antireflection film

78: crystalline semiconductor substrate 80: antireflection film

Claims (6)

A photovoltaic generation unit generating charges by light absorption; First and second electrodes having different polarities for outputting photovoltaic power generated by the photovoltaic generator to an external load; And A bias electrode for applying an electric field added to the photovoltaic generator, The charge generated by the photovoltaic generator is flowed and collected more quickly toward the first and second electrodes due to the internal electric field and the added electric field due to the bias voltage applied to the bias electrode, thereby recombining the electron-hole pair. High efficiency solar cell, characterized in that the high energy conversion efficiency can be obtained by preventing. The method of claim 1, A high efficiency solar cell comprising an insulating film for electrically insulating the bias electrode. The method of claim 1, The photovoltaic power generation unit A high-efficiency solar cell, wherein the intrinsic amorphous semiconductor film and the intrinsic microcrystalline semiconductor film comprise a multi-layer structured light absorbing layer. The method of claim 1, The photovoltaic power generation unit A high efficiency solar cell comprising a heterojunction with intrinsic thin-layer (HIT) structure. The method of claim 1, And the first and second electrodes have an integrated backside contact (IBC) structure. The method of claim 1, The photovoltaic generator is a high efficiency solar cell, characterized in that it comprises one anti-reflection film or a multi-layered anti-reflection film overlapping two or more porous anti-reflection film.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882499A (en) * 2015-05-19 2015-09-02 东南大学 Thermovoltaic cell
CN104964638A (en) * 2015-06-28 2015-10-07 西安电子科技大学 Method of measuring the forbidden band width of a strain Ge on the basis of a heterojunction capacitance-voltage method
KR101629729B1 (en) * 2015-09-07 2016-06-13 한국기계연구원 Perovskite solar cell
US11658253B2 (en) 2016-05-06 2023-05-23 Rensselaer Polytechnic Institute High absorption photovoltaic material and methods of making the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950004594B1 (en) * 1989-04-29 1995-05-02 삼성전자주식회사 Thermal treatment method of amorphous silicon solar cell
KR100303471B1 (en) * 2000-02-15 2001-11-03 주흥로 Avalanche photodetector device and method for manufacturing the same
JP2003158288A (en) 2001-11-21 2003-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector and its manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882499A (en) * 2015-05-19 2015-09-02 东南大学 Thermovoltaic cell
CN104964638A (en) * 2015-06-28 2015-10-07 西安电子科技大学 Method of measuring the forbidden band width of a strain Ge on the basis of a heterojunction capacitance-voltage method
KR101629729B1 (en) * 2015-09-07 2016-06-13 한국기계연구원 Perovskite solar cell
US11658253B2 (en) 2016-05-06 2023-05-23 Rensselaer Polytechnic Institute High absorption photovoltaic material and methods of making the same

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