KR20090112308A - 반도체 발광소자 및 그 제조방법 - Google Patents
반도체 발광소자 및 그 제조방법 Download PDFInfo
- Publication number
- KR20090112308A KR20090112308A KR1020080038117A KR20080038117A KR20090112308A KR 20090112308 A KR20090112308 A KR 20090112308A KR 1020080038117 A KR1020080038117 A KR 1020080038117A KR 20080038117 A KR20080038117 A KR 20080038117A KR 20090112308 A KR20090112308 A KR 20090112308A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor layer
- electrode
- conductive semiconductor
- light emitting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
- 반사 전극층;상기 반사층 위에 형성된 제 2도전성 반도체층;상기 제 2도전성 반도체층 위에 형성된 활성층;상기 활성층 위에 형성된 제1도전성 반도체층;상기 제 1도전성 반도체층의 일측 아래에 형성된 제 1전극을 포함하는 반도체 발광소자.
- 제 1항에 있어서,상기 반사 전극층 아래에 형성된 전도성 지지부재를 포함하는 반도체 발광소자.
- 제 1항에 있어서,상기 제 2도전성 반도체층은 p형 반도체층 또는 p형 반도체층과 그 위에 적층된 n형 반도체층을 포함하는 반도체 발광소자.
- 제 1항에 있어서,상기 제 1전극의 측면 및 저면 영역에 다른 층과의 절연을 위해 형성된 절연막을 포함하는 반도체 발광소자.
- 제 4항에 있어서,상기 절연막은 상기 반사 전극층, 상기 제 2도전성 반도체층 및 상기 활성층과 제 1전극 사이를 절연시켜 주는 반도체 발광소자.
- 기판 위에 제 1도전성 반도체층, 활성층 및 제 2도전성 반도체층을 형성하는 단계;상기 제 1도전성 반도체층의 일측에 제 1전극을 형성하는 단계;상기 제 1전극의 외측에 절연막을 형성하는 단계;상기 제 2도전성 반도체층 및 상기 절연막 위에 반사 전극층을 형성하는 단계;상기 반사 전극층 위에 전도성 지지부재를 형성하는 단계;상기 기판을 제거하는 단계;상기 제 1도전성 반도체층의 타측 일부를 에칭하여 상기 제 1전극을 노출시켜 주는 단계를 포함하는 반도체 발광소자 제조방법.
- 제 6항에 있어서,상기 절연막은 상기 반사전극층, 상기 제 2도전성 반도체층, 상기 활성층과 제1전극 사이에 형성되는 반도체 발광소자 제조방법.
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080038117A KR100946523B1 (ko) | 2008-04-24 | 2008-04-24 | 반도체 발광소자 및 그 제조방법 |
EP09734742A EP2262010A4 (en) | 2008-04-24 | 2009-04-16 | SEMICONDUCTOR ELECTROLUMINESCENT DEVICE |
DE202009018441U DE202009018441U1 (de) | 2008-04-24 | 2009-04-16 | Lichtemittierende Halbleitervorrichtung |
PCT/KR2009/001992 WO2009131335A2 (ko) | 2008-04-24 | 2009-04-16 | 반도체 발광소자 |
JP2011506185A JP2011519161A (ja) | 2008-04-24 | 2009-04-16 | 半導体発光素子 |
EP13177922.5A EP2657996A3 (en) | 2008-04-24 | 2009-04-16 | Semiconductor light-emitting device |
CN2009801138976A CN102017195A (zh) | 2008-04-24 | 2009-04-16 | 半导体发光器件 |
US12/428,622 US7973329B2 (en) | 2008-04-24 | 2009-04-23 | Semiconductor light emitting device |
US13/112,322 US8492782B2 (en) | 2008-04-24 | 2011-05-20 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080038117A KR100946523B1 (ko) | 2008-04-24 | 2008-04-24 | 반도체 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090112308A true KR20090112308A (ko) | 2009-10-28 |
KR100946523B1 KR100946523B1 (ko) | 2010-03-11 |
Family
ID=41214125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080038117A KR100946523B1 (ko) | 2008-04-24 | 2008-04-24 | 반도체 발광소자 및 그 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7973329B2 (ko) |
EP (2) | EP2657996A3 (ko) |
JP (1) | JP2011519161A (ko) |
KR (1) | KR100946523B1 (ko) |
CN (1) | CN102017195A (ko) |
DE (1) | DE202009018441U1 (ko) |
WO (1) | WO2009131335A2 (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR20120008958A (ko) * | 2010-07-21 | 2012-02-01 | 엘지이노텍 주식회사 | 발광 소자 |
KR20120009829A (ko) * | 2010-07-21 | 2012-02-02 | 엘지이노텍 주식회사 | 발광소자 |
KR20120088047A (ko) * | 2010-11-05 | 2012-08-08 | 엘지이노텍 주식회사 | 발광 소자 |
KR101451036B1 (ko) * | 2011-05-16 | 2014-10-14 | 가부시끼가이샤 도시바 | 반도체 발광 소자 |
KR20150136852A (ko) * | 2014-05-28 | 2015-12-08 | 엘지이노텍 주식회사 | 발광소자 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100946523B1 (ko) * | 2008-04-24 | 2010-03-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
DE102010044986A1 (de) * | 2010-09-10 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
TWI572025B (zh) * | 2015-01-15 | 2017-02-21 | 財團法人工業技術研究院 | 半導體發光元件及其製作方法 |
US9721931B2 (en) | 2015-01-15 | 2017-08-01 | Industrial Technology Research Institute | Semiconductor light emitting device and fabricating method thereof |
US10354580B2 (en) | 2017-09-07 | 2019-07-16 | United Microelectronics Corp. | Integrated LED display and fabrication method thereof |
CN109888074B (zh) * | 2019-01-31 | 2020-07-07 | 华灿光电(浙江)有限公司 | 发光二极管芯片及其制备方法 |
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JP3087831B2 (ja) * | 1996-11-27 | 2000-09-11 | 日亜化学工業株式会社 | 窒化物半導体素子 |
EP0905797B1 (de) * | 1997-09-29 | 2010-02-10 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
JP3859356B2 (ja) * | 1998-05-21 | 2006-12-20 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
DE10044500A1 (de) * | 2000-09-08 | 2002-04-04 | Highlink Technology Corp Chupe | Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben |
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TW518771B (en) * | 2001-09-13 | 2003-01-21 | United Epitaxy Co Ltd | LED and the manufacturing method thereof |
TW578318B (en) * | 2002-12-31 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and method of making the same |
KR100663324B1 (ko) * | 2004-04-29 | 2007-01-02 | 주식회사 이츠웰 | 수직전극형 발광 다이오드 및 그 제조 방법 |
US9368428B2 (en) * | 2004-06-30 | 2016-06-14 | Cree, Inc. | Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management |
JP2006073619A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP4353167B2 (ja) * | 2004-10-21 | 2009-10-28 | 日亜化学工業株式会社 | 半導体発光素子とその製造方法 |
US7679097B2 (en) * | 2004-10-21 | 2010-03-16 | Nichia Corporation | Semiconductor light emitting device and method for manufacturing the same |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
JP2006278554A (ja) | 2005-03-28 | 2006-10-12 | Tokyo Institute Of Technology | AlGaN系深紫外発光素子およびその製造方法 |
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EP1925036B1 (en) * | 2005-09-13 | 2016-04-13 | Toyoda Gosei Co., Ltd. | Nitride semiconductor light emitting device and production method thereof |
KR101316415B1 (ko) * | 2005-10-17 | 2013-10-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
KR100946523B1 (ko) * | 2008-04-24 | 2010-03-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2008
- 2008-04-24 KR KR1020080038117A patent/KR100946523B1/ko active IP Right Grant
-
2009
- 2009-04-16 EP EP13177922.5A patent/EP2657996A3/en not_active Withdrawn
- 2009-04-16 WO PCT/KR2009/001992 patent/WO2009131335A2/ko active Application Filing
- 2009-04-16 EP EP09734742A patent/EP2262010A4/en not_active Ceased
- 2009-04-16 DE DE202009018441U patent/DE202009018441U1/de not_active Expired - Lifetime
- 2009-04-16 JP JP2011506185A patent/JP2011519161A/ja active Pending
- 2009-04-16 CN CN2009801138976A patent/CN102017195A/zh active Pending
- 2009-04-23 US US12/428,622 patent/US7973329B2/en active Active
-
2011
- 2011-05-20 US US13/112,322 patent/US8492782B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR20120008958A (ko) * | 2010-07-21 | 2012-02-01 | 엘지이노텍 주식회사 | 발광 소자 |
KR20120009829A (ko) * | 2010-07-21 | 2012-02-02 | 엘지이노텍 주식회사 | 발광소자 |
KR20120088047A (ko) * | 2010-11-05 | 2012-08-08 | 엘지이노텍 주식회사 | 발광 소자 |
KR101451036B1 (ko) * | 2011-05-16 | 2014-10-14 | 가부시끼가이샤 도시바 | 반도체 발광 소자 |
US9082931B2 (en) | 2011-05-16 | 2015-07-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US9299889B2 (en) | 2011-05-16 | 2016-03-29 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US9368682B2 (en) | 2011-05-16 | 2016-06-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
KR20150136852A (ko) * | 2014-05-28 | 2015-12-08 | 엘지이노텍 주식회사 | 발광소자 |
Also Published As
Publication number | Publication date |
---|---|
KR100946523B1 (ko) | 2010-03-11 |
EP2262010A2 (en) | 2010-12-15 |
WO2009131335A2 (ko) | 2009-10-29 |
US20090267106A1 (en) | 2009-10-29 |
EP2657996A3 (en) | 2014-03-05 |
DE202009018441U1 (de) | 2011-09-06 |
WO2009131335A3 (ko) | 2010-01-21 |
EP2657996A2 (en) | 2013-10-30 |
JP2011519161A (ja) | 2011-06-30 |
EP2262010A4 (en) | 2011-09-14 |
CN102017195A (zh) | 2011-04-13 |
US7973329B2 (en) | 2011-07-05 |
US8492782B2 (en) | 2013-07-23 |
US20110284823A1 (en) | 2011-11-24 |
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