KR20090026210A - 절연층, 전자 디바이스, 전계 효과 트랜지스터 및 폴리비닐티오페놀 - Google Patents
절연층, 전자 디바이스, 전계 효과 트랜지스터 및 폴리비닐티오페놀 Download PDFInfo
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- KR20090026210A KR20090026210A KR1020097002176A KR20097002176A KR20090026210A KR 20090026210 A KR20090026210 A KR 20090026210A KR 1020097002176 A KR1020097002176 A KR 1020097002176A KR 20097002176 A KR20097002176 A KR 20097002176A KR 20090026210 A KR20090026210 A KR 20090026210A
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/21—Bromine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims (13)
- 제 1 항에 있어서,상기 Ra 가 직접 결합인 것을 특징으로 하는 절연층.
- 제 1 항 또는 제 2 항에 있어서,상기 Ar 이 치환되어도 되는 탄화수소계 방향고리인 것을 특징으로 하는 절 연층.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 Rb 가 수소 원자 또는 직쇄상 또는 분지상 탄화수소기인 것을 특징으로 하는 절연층.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 고분자 절연체가 적어도 비닐티오페놀 및/또는 비닐티오페놀 유도체에서 유래하는 반복 단위를 포함하는 것을 특징으로 하는 절연층.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 고분자 절연체가, 가교성 비닐 모노머에서 유래하는 반복 단위를 포함하는 것을 특징으로 하는 절연층.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 고분자 절연체가, 내열성 비닐 모노머에서 유래하는 반복 단위를 포함하는 것을 특징으로 하는 절연층.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,전기전도도가 1×10-12S/㎝ 이하인 것을 특징으로 하는 절연층.
- 제 1 항 내지 제 8 항 중 어느 한 항에 기재된 절연층을 구비하는 것을 특징으로 하는 전자 디바이스.
- 제 1 항 내지 제 8 항 중 어느 한 항에 기재된 절연층을 구비하는 것을 특징으로 하는 전계 효과 트랜지스터.
- 제 10 항에 있어서,포르피린을 함유하는 반도체층과, 소스 전극과, 드레인 전극과, 게이트 전극을 구비하는 것을 특징으로 하는 전계 효과 트랜지스터.
- 적어도 비닐티오페놀 및/또는 비닐티오페놀 유도체에서 유래하는 반복 단위와 가교성 비닐 모노머에서 유래하는 반복 단위를 포함하는 것을 특징으로 하는 폴리비닐티오페놀.
- 적어도 비닐티오페놀 및/또는 비닐티오페놀 유도체에서 유래하는 반복 단위와 내열성 비닐 모노머에서 유래하는 반복 단위를 포함하는 것을 특징으로 하는 폴리비닐티오페놀.
Applications Claiming Priority (3)
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JPJP-P-2006-213014 | 2006-08-04 | ||
JP2006213014 | 2006-08-04 | ||
PCT/JP2007/065175 WO2008016110A1 (fr) | 2006-08-04 | 2007-08-02 | Couche isolante, dispositif électronique, transistor à effet de champ, et polyvinylthiophénol |
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KR20090026210A true KR20090026210A (ko) | 2009-03-11 |
KR101120450B1 KR101120450B1 (ko) | 2012-03-14 |
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US (1) | US8207524B2 (ko) |
EP (1) | EP2048171B1 (ko) |
KR (1) | KR101120450B1 (ko) |
CN (1) | CN101501080B (ko) |
WO (1) | WO2008016110A1 (ko) |
Cited By (1)
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KR20160002557A (ko) * | 2014-06-30 | 2016-01-08 | 엘지디스플레이 주식회사 | 자기치유 중합체 및 이를 포함하는 플렉서블 표시장치 |
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US7829155B1 (en) * | 2006-11-22 | 2010-11-09 | The University Of Memphis Research Foundation | Nanothin polymer coatings containing thiol and methods of use thereof |
DE102008057350A1 (de) * | 2008-11-14 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
TW201126606A (en) * | 2009-09-15 | 2011-08-01 | Sumitomo Chemical Co | Photocrosslinkable organic thin-film transistor insulation layer material |
US20120292626A1 (en) * | 2009-11-17 | 2012-11-22 | Sumitomo Chemical Company, Limited | Optical and thermal energy cross-linkable insulating layer material for organic thin film transistor |
WO2012002436A1 (ja) * | 2010-06-30 | 2012-01-05 | 住友化学株式会社 | 有機薄膜トランジスタ絶縁層材料及び有機薄膜トランジスタ |
JP2012164805A (ja) * | 2011-02-07 | 2012-08-30 | Sumitomo Chemical Co Ltd | 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料 |
JP2012222007A (ja) * | 2011-04-05 | 2012-11-12 | Dainippon Printing Co Ltd | コプレナ型の酸化物半導体素子とその製造方法 |
CN102508408B (zh) * | 2011-10-27 | 2014-09-10 | 无锡英普林纳米科技有限公司 | 一种双固化型纳米压印传递层材料 |
EP3902023B1 (en) * | 2018-12-20 | 2024-04-24 | Tosoh Corporation | Composition containing organic semiconductor, solution for forming organic semiconductor layer, organic semiconductor layer, and organic thin film transistor |
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US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
US6723394B1 (en) * | 1999-06-21 | 2004-04-20 | Cambridge University Technical Services Limited | Aligned polymers for an organic TFT |
JP2002139836A (ja) * | 2000-11-02 | 2002-05-17 | Fuji Photo Film Co Ltd | ネガ型レジスト組成物 |
US7081210B2 (en) * | 2002-04-22 | 2006-07-25 | Konica Minolta Holdings, Inc. | Organic semiconductor composition |
CN101667624B (zh) * | 2002-07-31 | 2011-08-17 | 三菱化学株式会社 | 场效应晶体管 |
KR100524552B1 (ko) * | 2002-09-28 | 2005-10-28 | 삼성전자주식회사 | 유기 게이트 절연막 및 이를 이용한 유기박막 트랜지스터 |
KR100995451B1 (ko) | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
JP5137296B2 (ja) | 2004-03-19 | 2013-02-06 | 三菱化学株式会社 | 電界効果トランジスタ |
JP2006245559A (ja) | 2005-02-07 | 2006-09-14 | Mitsubishi Chemicals Corp | 電界効果トランジスタ及びその製造方法 |
JP2006213014A (ja) | 2005-02-07 | 2006-08-17 | Ricoh Co Ltd | 画像出力装置 |
JP4897397B2 (ja) | 2005-12-27 | 2012-03-14 | ハリソン東芝ライティング株式会社 | 紫外線照射装置 |
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- 2007-08-02 CN CN2007800289700A patent/CN101501080B/zh active Active
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US20100001264A1 (en) | 2010-01-07 |
CN101501080A (zh) | 2009-08-05 |
EP2048171B1 (en) | 2017-11-22 |
EP2048171A1 (en) | 2009-04-15 |
WO2008016110A1 (fr) | 2008-02-07 |
EP2048171A4 (en) | 2013-10-16 |
US8207524B2 (en) | 2012-06-26 |
CN101501080B (zh) | 2011-05-11 |
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