KR20090014512A - Manufacturing method of diamond like carbon films doped with the third elements - Google Patents
Manufacturing method of diamond like carbon films doped with the third elements Download PDFInfo
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- KR20090014512A KR20090014512A KR1020070078526A KR20070078526A KR20090014512A KR 20090014512 A KR20090014512 A KR 20090014512A KR 1020070078526 A KR1020070078526 A KR 1020070078526A KR 20070078526 A KR20070078526 A KR 20070078526A KR 20090014512 A KR20090014512 A KR 20090014512A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910003460 diamond Inorganic materials 0.000 title abstract description 8
- 239000010432 diamond Substances 0.000 title abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 21
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 2
- 229910021385 hard carbon Inorganic materials 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003828 vacuum filtration Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
Abstract
Description
본 발명은 탄소를 함유한 가스를 분해하여 탄소박막을 제조하는 방법에 관한 것으로, 보다 상세하게는 기판 주위에 메쉬 형태의 재료를 설치하고 상기 재료에 고주파 전원을 인가하여 재료를 스퍼터링하면서 동시에 ECR(Electron Cyclotron Resonance) 플라즈마를 이용한 화학증착방식으로 경질 탄소박막을 코팅하여 경질 탄소박막에 금속재료가 도핑되게 한 제3의 원소가 첨가된 다이아몬드상 탄소박막의 제조방법에 관한 것이다.The present invention relates to a method for producing a carbon thin film by decomposing a gas containing carbon, and more particularly, by installing a material in the form of a mesh around the substrate and applying a high frequency power to the material to sputter the material and at the same time ECR ( Electron Cyclotron Resonance) The present invention relates to a method of manufacturing a diamond-like carbon thin film in which a third element is added to a hard carbon thin film by coating a hard carbon thin film by chemical vapor deposition using plasma.
일반적으로, 진공중에서 탄소를 함유한 가스 또는 흑연 타겟을 이용하면서 플라즈마를 이용한 활성화를 통해 제조되는 탄소박막은 수소의 함량이나 이온에너지 등에 따라 흑연 특성은 물론 폴리머 특성, 그리고 다이아몬드 특성까지 다양한 형태로 구현되며 제조된 박막의 기계적, 물리적 특성 또한 매우 광범위한 형태로 나타난다.In general, a carbon thin film manufactured by activating plasma using a carbon-containing gas or graphite target in a vacuum is realized in various forms, including graphite, polymer, and diamond, depending on hydrogen content and ion energy. In addition, the mechanical and physical properties of the manufactured thin film are also shown in a wide range.
예컨대, 비정질 탄소박막은 이러한 다양한 탄소계 박막 중에서 물리적, 화학적으로 안정하고 기계적 특성이 우수한 박막을 통칭하여 일컫는 말이다.For example, amorphous carbon thin film refers to a thin film which is physically and chemically stable and has excellent mechanical properties among the various carbon-based thin films.
이러한 비정질 탄소박막 중에서 지금까지 가장 많이 연구가 되어 왔으며, 또한 산업상 널리 이용되는 것이 다이아몬드상 탄소(Diamond Like Carbon; DLC)이며, 이와 같은 다이아몬드상 탄소박막은 높은 경도, 고윤활 특성, 우수한 생체적합성, 낮은 표면거칠기 등 많은 장점을 가지고 있다.Among these amorphous carbon thin films, the most research has been conducted so far, and the most widely used industrially is diamond like carbon (DLC). Such diamond carbon thin films have high hardness, high lubrication characteristics, and excellent biocompatibility. It has many advantages such as low surface roughness.
지금까지 다이아몬드상 탄소박막을 제조하는 방법으로는 ECR-CVD방식(공개특허 2001-0026548)과, 진공여과아크방식(공개특허2003-0035444), PECVD(공개특허 2004-0088650), 이온빔증착법(공개특허 2005-0005251) 등이 있다.So far, a diamond-like carbon thin film is manufactured by ECR-CVD method (Patent Patent 2001-0026548), vacuum filtration arc method (Patent Patent 2003-0035444), PECVD (Patent Patent 2004-0088650), ion beam deposition method (published) Patent 2005-0005251).
그러나, 개시된 기술에 의한 다이아몬드상 탄소박막은 높은 경도로 인해 잔류응력이 높고, 기판과의 낮은 친화력으로 인해 부착 특성이 열악하여 신뢰성이 높은 피막제조가 어려워 산업에 적용하는데 많은 제약이 따랐다.However, the diamond-like carbon thin film according to the disclosed technology has high residual stress due to high hardness and poor adhesion characteristics due to low affinity with the substrate, making it difficult to manufacture a highly reliable film, which has led to many limitations in application to the industry.
이러한 문제점을 해결하기 위해 공개특허 2003-0035444에서는 아크소스와 스퍼터링 소스를 동시에 이용하여 다이아몬드상 탄소박막내에 실리콘을 첨가하여 제반 물성은 유지하면서 잔류응력을 감소시키는 방법을 제공하였다.In order to solve this problem, Korean Patent Laid-Open Publication No. 2003-0035444 provided a method of reducing residual stress while maintaining overall physical properties by adding silicon to a diamond-like carbon thin film using an arc source and a sputtering source simultaneously.
그럼에도 불구하고, 이 방법은 소스를 두 개 이상 사용하기 때문에 제어가 까다롭다는 단점이 있었다.Nevertheless, this method has the disadvantage of being difficult to control because it uses more than one source.
본 발명은 상술한 바와 같은 제반 문제점을 감안하여 이를 해소하기 위해 창출된 것으로, 탄소를 함유한 가스를 분해하여 탄소박막을 제조할 때에 기판 주위에 판상의 재료를 설치하고 이 재료에 고주파 전원을 인가하여 재료를 스퍼터링하면서 동시에 ECR 플라즈마를 이용한 화학증착방식으로 경질 탄소박막을 코팅하여 경질 탄소박막에 금속재료가 도핑되게 하여 다이아몬드상이 되도록 함으로써 제어의 용이성을 확보함과 동시에 물성은 유지하면서 잔류응력을 감소시킬 수 있도록 하여 산업상 이용성을 더욱 높인 제3의 원소가 첨가된 다이아몬드상 탄소박막의 제조방법의 제공을 그 주된 해결 과제로 한다.The present invention has been made to solve the above problems in consideration of the above-mentioned problems. When manufacturing a carbon thin film by decomposing a gas containing carbon, a plate-like material is installed around a substrate and high frequency power is applied to the material. By sputtering the material and simultaneously coating the hard carbon thin film by chemical vapor deposition using ECR plasma so that the metal material is doped into the hard carbon thin film so that it becomes diamond-like, thereby ensuring ease of control and reducing residual stress while maintaining physical properties. The main problem is to provide a method for producing a diamond-like carbon thin film to which a third element is added, which further enhances industrial usability.
본 발명은 상기한 기술적 과제를 달성하기 위한 수단으로, 진공실 내부에는 기판이 장착된 기판홀더가 구비되고, 기판 상부에는 거리를 두고 도핑물질메쉬가 고주파전원과 연결된 채 배치되며, 진공실 상부에는 가스주입구가 형성되고, 전자석이 구비되며, 전자석 사이로는 가이드튜브가 배치되고, 이 가이드튜브에는 마이크로파발생기가 연결되도록 배치하는 단계와; 상기 단계후 진공실내 진공도를 10-5 토르 이하로 진공시키는 단계와; 진공이 형성되면 가스도입구를 통해 진공실 내부로 아르곤가스를 도입시키면서 마이크로파발생기에 전원을 인가하여 마이크로파를 발생시키고 전자석에 전원을 인가하여 300W의 전력으로 ECR 플라즈마를 발생시켜 아르곤 플라즈마로 기판의 표면을 청정시키는 단계와; 상기 청정 단계후 상기 가스도입구를 통해 메탄과 수소가 혼합된 혼합가스를 공급하면서 도핑물질메쉬에도 300W의 고주파전원을 인가하여 상기 도핑물질이 기판상에 도핑되면서 다이아몬드상 탄소박막을 형성시키는 단계로 이루어진 제3의 원소가 첨가된 다이아몬드상 탄소박막의 제조방법을 제공함에 그 특징이 있다.The present invention is a means for achieving the above technical problem, a substrate holder in which the substrate is mounted is provided inside the vacuum chamber, the doping material mesh is disposed at a distance above the substrate connected to the high frequency power source, the gas inlet above the vacuum chamber Is formed, is provided with an electromagnet, the guide tube is disposed between the electromagnet, the guide tube disposed so as to connect the microwave generator; Vacuuming the vacuum in the vacuum chamber to 10 −5 Torr or less after the step; When the vacuum is formed, argon gas is introduced into the vacuum chamber through the gas inlet, and the microwave generator is supplied with power to generate microwaves, and the electromagnet is applied to generate an ECR plasma with a power of 300 W to form the surface of the substrate with argon plasma. Purging; After the cleaning step, by supplying a mixed gas mixed with methane and hydrogen through the gas inlet, and applying a 300W high-frequency power to the doping material mesh to form a diamond-like carbon thin film as the doping material is doped on the substrate It is characterized by providing a method for producing a diamond-like carbon thin film to which a third element made up is added.
이때, 상기 탄소박막 형성단계에서, 메탄과 수소의 혼합비는 1:5인 것에도 그 특징이 있다.At this time, in the carbon thin film forming step, the mixing ratio of methane and hydrogen is also characterized in that 1: 5.
또한, 상기 탄소박막 형성단계에서, ECR 플라즈마는 전자석에 인가되는 전력이 500W인 것에도 그 특징이 있다.In addition, in the carbon thin film forming step, the ECR plasma is characterized in that the power applied to the electromagnet is 500W.
본 발명의 방법으로 금속이 함유된 다이아몬드상 탄소박막을 제조하면 공정이 간단하면서 광범위한 조성의 도핑 물질 제어가 가능하여 산업적으로 매우 유용한 다이아몬드상 탄소박막을 제조할 수 있게 된다.When the diamond-like carbon thin film containing the metal is produced by the method of the present invention, the process is simple and the doping material control of a wide range of compositions is possible, thereby making it possible to manufacture a diamond-like carbon thin film which is very industrially useful.
이하에서는, 첨부도면을 참조하여 본 발명에 따른 바람직한 실시예를 보다 상세하게 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment according to the present invention.
도 1은 본 발명을 설명하기 위한 탄소피막 형성시의 사용설비를 보인 모식도 이고, 도 2는 본 발명의 실시예에 따른 고주파전원의 전력에 따른 도핑물질 함유량의 변화를 보인 그래프이다.Figure 1 is a schematic diagram showing the equipment used when forming a carbon film for explaining the present invention, Figure 2 is a graph showing a change in the content of the doping material according to the power of the high frequency power supply according to an embodiment of the present invention.
본 발명에 따른 표면처리를 위해 사용되는 진공설비로 공지된 진공증착장치를 이용하였다.A vacuum deposition apparatus known as a vacuum facility used for the surface treatment according to the present invention was used.
예컨대, 도 1의 예시와 같이, 진공실(1) 내에는 기판홀더(2)가 구비되고, 상기 기판홀더(2)에는 기판(3)이 장착된다.For example, as shown in FIG. 1, the
또한, 상기 기판(3)의 상부에는 도핑물질메쉬(4)가 설치되고, 상기 도핑물질메쉬(4)에는 고주판전원(9)이 연결된다.In addition, a
한편, 상기 진공실(1)의 상부에는 ECR 플라즈마를 발생시키기 위한 마이크로파발생기(7)와, 가이드 튜브(5), 전자석(6) 및 가스도입구(8)가 구비된다.On the other hand, the upper portion of the
이 상태에서, 먼저 진공펌프(미도시)를 이용하여 진공실(1) 내부의 진공도가 10-5 토르 이하가 되도록 배기한다.In this state, a vacuum pump (not shown) is first used to evacuate the vacuum in the
이 과정을 통해, 상기 진공실(1)의 진공도가 10-5 토르 이하가 되면, 기판(3)의 청정을 위해 가스도입구(8)를 통해 아르곤가스를 주입하면서 마이크로파발생기(7)에 전원을 인가하여 마이크로파를 발생시킨 다음 전자석(6)에 전원을 인가하여 ECR 플라즈마를 유도한다.Through this process, when the vacuum degree of the
이어, 고주파전원(9)에 전원을 인가하여 아르곤가스를 방전시킴으로써 아르곤 플라즈마를 발생시키고, 이 아르곤 플라즈마를 이용하여 기판(3)의 표면을 청정시킨다.Subsequently, argon plasma is generated by applying power to the high
이때, 상기 기판(3)의 청정은 기판(3)에 존재하는 유기물과 같은 불순물 뿐만 아니라 자연적으로 존재하는 산화막까지를 제거하는 것을 의미하며, 만약 이들 불순물이 충분히 제거되지 않으면 밀착성에 영향을 주므로 충분히 청정을 해주어야 한다.At this time, the cleaning of the
이를 위해, 기판(3)의 청정은 보통 10-2 토르 정도의 아르곤가스 분위기에서 시편에 300W의 고주파 전력을 인가하여 실시함이 바람직하다.For this purpose, it is preferable to clean the
이렇게 하면, 방전영역에 존재하는 아르곤 이온이 기판(3)에 충돌하여 기판(3)에 존재하는 불순물을 제거하게 된다. In this way, argon ions present in the discharge region collide with the
이와 같은 과정을 통해, 기판(3)의 청정이 완료되면 가스도입구(8)를 통해 메탄이나 아세틸렌 등의 탄소함유 가스와 수소 가스를 적정비율로 혼합 주입하면서 기판(3)을 청정하였을 때와 동일한 방법으로 ECR 플라즈마를 유도하고, 고주파전원(9)에 전력을 인가하여 다이아몬드상 탄소박막을 제조한다.Through such a process, when the cleaning of the
이하, 실시예에 대하여 설명한다.Hereinafter, an Example is described.
[실시예]EXAMPLE
본 발명 실시를 위해, Co가 10% 함유된 초경 기판상에 Ti이 약 8% 함유된 다이아몬드상 탄소박막을 제조하였다.For carrying out the present invention, a diamond-like carbon thin film containing about 8% Ti was prepared on a cemented carbide substrate containing 10% Co.
이때, 실험을 위해, 가로, 세로가 각각 5cm이고 두께가 5mm인 초경 기판(3)을 시편으로 하고, 이 시편을 기판홀더(2)에 장착한 다음 지름이 1mm인 티타늄 메쉬를 가로, 세로가 각각 10cm가 되도록 엮은 다음 기판 위의 5cm 위에 위치시켰다.At this time, for the experiment, a cemented
이어, 진공펌프를 이용하여 배기하여, 진공도가 10-5 토르 이하가 된 후 기판(3)의 청정을 위해 가스도입구(8)를 통해 아르곤 가스를 주입하면서 마이크로파발생기(7)에 전원을 인가하여 마이크로파를 발생시킨 다음 전자석(6)에 전원을 인가하여 300W의 전력으로 ECR 플라즈마를 유도하였다.Subsequently, the vacuum pump is exhausted, and after the vacuum degree is 10 −5 Torr or less, power is supplied to the
다음에, 고주파전원(9)에 300W의 전원을 인가하여 아르곤 플라즈마를 발생시켜 30분 동안 기판(3)을 청정시켰다.Next, 300W of power was applied to the high
기판(3)의 청정이 완료된 후 가스도입구를 통해 메탄과 수소를 1:5(이 범위일 때 다이아몬드상 탄소박막의 효율이 제일 좋기 때문)의 비율로 조절하여 주입하 면서 ECR 플라즈마를 유도하되 발생된 플라즈마의 전력을 500W로 하고 도핑물질메쉬(5)인 Ti 메쉬에 고주파전원(9)을 통해 300W의 전력을 인가하여 티타늄이 함유된 다이아몬드상 탄소박막을 제조하였다. After the cleaning of the
이 결과, 도 2에서와 같이, 고주파전원(9)의 전력에 따른 도핑물질 함유량이 선형적으로 증가함을 확인할 수 있었다.As a result, as shown in Figure 2, it can be seen that the content of the doping material in accordance with the power of the high frequency power source (9) increases linearly.
이를 통해, 간단하면서도 용이하게 금속이 함유된 다이아몬드상 탄소박막을 제조할 수 있었고, 광범위한 조성의 도핑 물질 제어도 가능함을 확인할 수 있었다.Through this, it was possible to easily and easily prepare a diamond-like carbon thin film containing a metal, it was confirmed that the doping material control of a wide range of composition is possible.
도 1은 본 발명을 설명하기 위한 탄소피막 형성시의 사용설비를 보인 모식도,1 is a schematic diagram showing the equipment used in the formation of a carbon film for explaining the present invention,
도 2는 본 발명의 실시예에 따른 고주파전원의 전력에 따른 도핑물질 함유량의 변화를 보인 그래프.2 is a graph showing a change in the content of the doping material according to the power of the high frequency power supply according to an embodiment of the present invention.
♧ 도면의 주요 부분에 대한 부호의 설명 ♧♧ description of the symbols for the main parts of the drawing ♧
1....진공실 2....기판홀더1 .... vacuum room 2 .... substrate holder
3....기판 4....도핑물질메쉬3 .... substrate 4 .... doping material mesh
5....가이드튜브 6....전자석5 .... guide tube 6 .... electromagnet
7....마이크로파발생기 8....가스도입구7 ....
9....고주파전원9 .... high frequency power supply
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