KR20080109788A - 레이저 조사 장치 - Google Patents
레이저 조사 장치 Download PDFInfo
- Publication number
- KR20080109788A KR20080109788A KR1020087023807A KR20087023807A KR20080109788A KR 20080109788 A KR20080109788 A KR 20080109788A KR 1020087023807 A KR1020087023807 A KR 1020087023807A KR 20087023807 A KR20087023807 A KR 20087023807A KR 20080109788 A KR20080109788 A KR 20080109788A
- Authority
- KR
- South Korea
- Prior art keywords
- laser beam
- laser
- axis direction
- irradiation area
- shaped irradiation
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
- B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
Claims (2)
- 레이저 빔(B1)을 펄스 출력하는 레이저 발진기(1)와, 상기 레이저 빔(B1)을 반사하는 반사기(2)와, 상기 레이저 빔(B1)이 입사하는 상기 반사기(2)의 반사면(2b)의 상기 레이저 빔(B1)에 대한 각도(θ) 또는 위치의 변화에 의해 반사 빔(B2)이 움직이는 방향을 장축 방향으로 하는 띠 형상 조사 영역(4)에 상기 반사 빔(B2)을 정형하여 반도체 기판(S)에 조사하는 광학계(3)와, 상기 반도체 기판(S)을 보호 유지하여 상기 띠 형상 조사 영역(4)의 단축 방향으로 이동할 수 있는 이동대(5)와, 상기 반사기(2)의 각도 또는 위치를 바꾸는 반사기 구동 수단(6)과, 띠 형상 조사 영역의 장축 방향의 소정 범위내에서 띠 형상 조사 영역의 위치를 바꾸기 위해서 상기 레이저 발진기(1)로 레이저 빔(B1)을 펄스 출력하는 타이밍과 상기 반사기 구동 수단(6)으로 상기 반사기(2)의 각도 또는 위치를 바꾸는 타이밍의 조정을 행하는 타이밍 제어 수단(8)을 구비하는 것을 특징으로 하는 레이저 조사 장치(1).
- 트리거(G)에 따라서 레이저 빔(B1)을 펄스 출력하는 레이저 발진기(1)와, 상기 레이저 빔(B1)을 반사하는 회전 다각형 미러(2)와, 상기 레이저 빔(B1)이 입사하는 상기 회전 다각형 미러(2)와, 상기 레이저 빔(B1)의 입사각(θ)의 변화에 의해 반사 빔(B2)이 흔들리는 방향을 장축 방향으로 하는 띠 형상 조사 영역(4)에 상 기 반사 빔(B2)을 정형하여 반도체 기판(S)에 조사하는 광학계(3)와, 상기 반도체 기판(S)을 보호 유지하여 상기 띠 형상 조사 영역(4)의 단축 방향으로 이동할 수 있는 이동대(5)와, 상기 회전 다각형 미러(2)를 일정 속도로 회전시키는 회전 구동 수단(6)과, 상기 회전 다각형 미러(2)의 회전 위상 정보(Q)를 출력하는 회전 위상 검출 수단(7)과, 상기 회전 위상 정보(Q)에 근거하여 상기 트리거(G)의 출력 타이밍을 소정의 시간 범우 내에서 변화시켜서 상기 입사각(θ)을 소정 각도 범위 내에서 변화시키는 타이밍 제어 수단(8)을 구비하는 것을 특징으로 하는 레이저 조사 장치(100).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006094484A JP4549996B2 (ja) | 2006-03-30 | 2006-03-30 | レーザ照射装置 |
JPJP-P-2006-00094484 | 2006-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080109788A true KR20080109788A (ko) | 2008-12-17 |
KR101028598B1 KR101028598B1 (ko) | 2011-04-11 |
Family
ID=38580878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087023807A KR101028598B1 (ko) | 2006-03-30 | 2007-02-13 | 레이저 조사 장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4549996B2 (ko) |
KR (1) | KR101028598B1 (ko) |
DE (1) | DE112007000735T5 (ko) |
TW (1) | TW200737352A (ko) |
WO (1) | WO2007116576A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180011453A (ko) * | 2016-07-22 | 2018-02-01 | 전자부품연구원 | 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다 |
US10103180B2 (en) | 2011-11-24 | 2018-10-16 | Samsung Display Co., Ltd. | Crystallization apparatus, crystallizing method, and method of manufacturing organic light-emitting display apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013109328A2 (en) * | 2011-10-27 | 2013-07-25 | Applied Materials, Inc. | Laser crystallization and polycrystal efficiency improvement for thin film solar |
WO2020152796A1 (ja) * | 2019-01-23 | 2020-07-30 | ギガフォトン株式会社 | レーザ加工装置及び被加工物の加工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPH0410216A (ja) | 1990-04-26 | 1992-01-14 | Fuji Photo Film Co Ltd | 磁気記録媒体及びその製造方法 |
JP3825515B2 (ja) * | 1996-01-17 | 2006-09-27 | 株式会社東芝 | 液晶表示装置の製造方法 |
JPWO2004042806A1 (ja) * | 2002-11-05 | 2006-03-09 | ソニー株式会社 | 光照射装置及び光照射方法 |
JP4583004B2 (ja) * | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | アクティブ・マトリクス基板の製造方法 |
-
2006
- 2006-03-30 JP JP2006094484A patent/JP4549996B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-17 TW TW096101711A patent/TW200737352A/zh not_active IP Right Cessation
- 2007-02-13 WO PCT/JP2007/000079 patent/WO2007116576A1/ja active Application Filing
- 2007-02-13 DE DE112007000735T patent/DE112007000735T5/de not_active Withdrawn
- 2007-02-13 KR KR1020087023807A patent/KR101028598B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10103180B2 (en) | 2011-11-24 | 2018-10-16 | Samsung Display Co., Ltd. | Crystallization apparatus, crystallizing method, and method of manufacturing organic light-emitting display apparatus |
KR20180011453A (ko) * | 2016-07-22 | 2018-02-01 | 전자부품연구원 | 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다 |
Also Published As
Publication number | Publication date |
---|---|
DE112007000735T5 (de) | 2009-01-22 |
TW200737352A (en) | 2007-10-01 |
WO2007116576A1 (ja) | 2007-10-18 |
TWI380369B (ko) | 2012-12-21 |
KR101028598B1 (ko) | 2011-04-11 |
JP2007273539A (ja) | 2007-10-18 |
JP4549996B2 (ja) | 2010-09-22 |
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