KR20080104363A - 반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 - Google Patents
반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 Download PDFInfo
- Publication number
- KR20080104363A KR20080104363A KR1020087024670A KR20087024670A KR20080104363A KR 20080104363 A KR20080104363 A KR 20080104363A KR 1020087024670 A KR1020087024670 A KR 1020087024670A KR 20087024670 A KR20087024670 A KR 20087024670A KR 20080104363 A KR20080104363 A KR 20080104363A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- semiconductor light
- izo film
- emitting element
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 136
- 229910002601 GaN Inorganic materials 0.000 claims description 68
- 238000000137 annealing Methods 0.000 claims description 68
- 238000011282 treatment Methods 0.000 claims description 38
- -1 gallium nitride compound Chemical class 0.000 claims description 27
- 239000012298 atmosphere Substances 0.000 claims description 21
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 128
- 238000002834 transmittance Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 239000012528 membrane Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
온도 | 시트 저항[Ω/sq] | |
O2 함유 N2 분위기 | N2 분위기 | |
300℃ | 15 | 13 |
400℃ | 150 | 13 |
500℃ | 200 | 12 |
600℃ | 7×105 | 9 |
Claims (14)
- p형 반도체층을 포함하고, 적어도 자외 영역에 발광 파장을 갖는 반도체층과, 상기 p형 반도체층 상에 설치된 투광성 전극을 구비하고,상기 투광성 전극이 결정화된 IZO막을 포함하는 것을 특징으로 하는 반도체 발광 소자.
- 제1항에 있어서, 적어도 350㎚ 내지 420㎚에 발광 파장을 갖는 것을 특징으로 하는 반도체 발광 소자.
- 제1항 또는 제2항에 있어서, 상기 IZO막의 두께가 35㎚ 내지 10㎛인 것을 특징으로 하는 반도체 발광 소자.
- 제3항에 있어서, 상기 IZO막의 두께가 100㎚ 내지 1㎛인 것을 특징으로 하는 반도체 발광 소자.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 IZO막 상에 보호층이 형성되어 있는 것을 특징으로 하는 반도체 발광 소자.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 반도체층이 질화갈륨계 화 합물 반도체층인 것을 특징으로 하는 반도체 발광 소자.
- p형 반도체층을 포함하고, 적어도 자외 영역에 발광 파장을 갖는 반도체층과, 상기 p형 반도체층 상에 설치되고, 결정화된 IZO막을 포함하는 투광성 전극을 구비하는 반도체 발광 소자의 제조 방법이며,상기 p형 반도체층 상에 아몰퍼스 상태의 IZO막을 형성하는 공정과,500℃ 내지 900℃의 어닐링 처리를 행함으로써 상기 아몰퍼스 상태의 IZO막을 결정화된 IZO막으로 하는 어닐링 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항에 있어서, 상기 어닐링 공정을 행하기 전에 상기 아몰퍼스 상태의 IZO막을 패터닝하는 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 또는 제8항에 있어서, 상기 어닐링 처리는 O2를 포함하지 않는 분위기 중에서 행하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제9항에 있어서, 상기 어닐링 처리는 N2 분위기 중 또는 N2와 H2의 혼합 가스 분위기 중에서 행하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 내지 제10항 중 어느 한 항에 있어서, 상기 IZO막의 두께가 35㎚ 내지 10㎛인 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제11항에 있어서, 상기 IZO막의 두께가 100㎚ 내지 1㎛인 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 내지 제12항 중 어느 한 항에 있어서, 상기 어닐링 공정의 후 상기 IZO막 상에 보호층을 적층하는 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제1항 내지 제6항 중 어느 한 항에 기재된 반도체 발광 소자가 사용되고 있는 것을 특징으로 하는 램프.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006112012A JP5265090B2 (ja) | 2006-04-14 | 2006-04-14 | 半導体発光素子およびランプ |
JPJP-P-2006-00112012 | 2006-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080104363A true KR20080104363A (ko) | 2008-12-02 |
KR100988143B1 KR100988143B1 (ko) | 2010-10-18 |
Family
ID=38609590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087024670A KR100988143B1 (ko) | 2006-04-14 | 2007-04-13 | 반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8334200B2 (ko) |
EP (1) | EP2012371B1 (ko) |
JP (1) | JP5265090B2 (ko) |
KR (1) | KR100988143B1 (ko) |
CN (1) | CN101421856A (ko) |
TW (1) | TWI359509B (ko) |
WO (1) | WO2007119830A1 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5201566B2 (ja) * | 2006-12-11 | 2013-06-05 | 豊田合成株式会社 | 化合物半導体発光素子及びその製造方法 |
WO2008081566A1 (ja) | 2006-12-28 | 2008-07-10 | Nec Corporation | 電極構造、半導体素子、およびそれらの製造方法 |
JP2008235877A (ja) | 2007-02-19 | 2008-10-02 | Showa Denko Kk | 太陽電池及びその製造方法 |
JP2009260237A (ja) | 2008-01-24 | 2009-11-05 | Showa Denko Kk | 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置 |
US20090205707A1 (en) * | 2008-02-19 | 2009-08-20 | Showa Denko K.K. | Solar cell and method for producing the same |
WO2009110539A1 (ja) * | 2008-03-06 | 2009-09-11 | 住友金属鉱山株式会社 | 半導体発光素子、該半導体発光素子の製造方法および該半導体発光素子を用いたランプ |
KR101221281B1 (ko) | 2008-03-13 | 2013-01-11 | 쇼와 덴코 가부시키가이샤 | 반도체 발광 소자 및 그 제조 방법 |
JP5083973B2 (ja) * | 2008-03-28 | 2012-11-28 | スタンレー電気株式会社 | 光半導体素子の製造方法 |
JP2009246275A (ja) * | 2008-03-31 | 2009-10-22 | Showa Denko Kk | Iii族窒化物半導体発光素子及びランプ |
JP2009253056A (ja) * | 2008-04-07 | 2009-10-29 | Showa Denko Kk | Iii族窒化物半導体発光素子及びランプ |
JP2009283551A (ja) | 2008-05-20 | 2009-12-03 | Showa Denko Kk | 半導体発光素子及びその製造方法、ランプ |
JP2011086855A (ja) * | 2009-10-19 | 2011-04-28 | Showa Denko Kk | 半導体発光素子の製造方法 |
JP5379703B2 (ja) * | 2010-01-26 | 2013-12-25 | パナソニック株式会社 | 紫外半導体発光素子 |
US20110244663A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
CN101847677B (zh) * | 2010-04-07 | 2012-11-14 | 中国科学院半导体研究所 | 采用mvpe两步法制备氧化锌透明电极的方法 |
JP5829014B2 (ja) * | 2010-09-30 | 2015-12-09 | シャープ株式会社 | 化合物半導体発光素子の製造方法 |
CN110459658A (zh) * | 2018-05-08 | 2019-11-15 | 山东浪潮华光光电子股份有限公司 | 一种P型GaN层的UV LED芯片及其制备方法 |
CN112420888B (zh) * | 2021-01-21 | 2021-04-23 | 华灿光电(浙江)有限公司 | 紫外发光二极管外延片及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222312A (ja) | 1985-07-23 | 1987-01-30 | アルプス電気株式会社 | 透明導電性被膜の形成方法 |
JPH05299175A (ja) | 1992-04-24 | 1993-11-12 | Fuji Xerox Co Ltd | El発光素子 |
JP2000026119A (ja) | 1998-07-09 | 2000-01-25 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000067657A (ja) * | 1998-08-26 | 2000-03-03 | Internatl Business Mach Corp <Ibm> | 赤外線透過に優れた透明導電膜及びその製造方法 |
EP1777321A1 (en) * | 1999-11-25 | 2007-04-25 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and process for producing the sputtering target |
JP2002164570A (ja) * | 2000-11-24 | 2002-06-07 | Shiro Sakai | 窒化ガリウム系化合物半導体装置 |
JP4310984B2 (ja) * | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | 有機発光表示装置 |
JP3720341B2 (ja) * | 2003-02-12 | 2005-11-24 | ローム株式会社 | 半導体発光素子 |
JP4259268B2 (ja) | 2003-10-20 | 2009-04-30 | 豊田合成株式会社 | 半導体発光素子 |
JP2005217331A (ja) * | 2004-01-30 | 2005-08-11 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2005259891A (ja) * | 2004-03-10 | 2005-09-22 | Toyoda Gosei Co Ltd | 発光装置 |
KR100634503B1 (ko) * | 2004-03-12 | 2006-10-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7339255B2 (en) | 2004-08-24 | 2008-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
KR101511231B1 (ko) * | 2004-09-13 | 2015-04-17 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 투명도전막과 그 제조방법 및 투명도전성 기재, 발광디바이스 |
JP4578929B2 (ja) | 2004-10-15 | 2010-11-10 | 日本エステル株式会社 | ポリ乳酸系複合バインダー繊維 |
-
2006
- 2006-04-14 JP JP2006112012A patent/JP5265090B2/ja active Active
-
2007
- 2007-04-13 US US12/296,849 patent/US8334200B2/en active Active
- 2007-04-13 CN CNA2007800128677A patent/CN101421856A/zh active Pending
- 2007-04-13 WO PCT/JP2007/058193 patent/WO2007119830A1/ja active Application Filing
- 2007-04-13 KR KR1020087024670A patent/KR100988143B1/ko active IP Right Grant
- 2007-04-13 EP EP07741629.5A patent/EP2012371B1/en active Active
- 2007-04-14 TW TW096113231A patent/TWI359509B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101421856A (zh) | 2009-04-29 |
EP2012371B1 (en) | 2015-02-25 |
EP2012371A4 (en) | 2014-01-22 |
WO2007119830A1 (ja) | 2007-10-25 |
JP5265090B2 (ja) | 2013-08-14 |
TWI359509B (en) | 2012-03-01 |
JP2007287845A (ja) | 2007-11-01 |
KR100988143B1 (ko) | 2010-10-18 |
US20090179220A1 (en) | 2009-07-16 |
EP2012371A1 (en) | 2009-01-07 |
TW200805714A (en) | 2008-01-16 |
US8334200B2 (en) | 2012-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100988143B1 (ko) | 반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 | |
JP5201566B2 (ja) | 化合物半導体発光素子及びその製造方法 | |
EP2012372B1 (en) | Method for manufacturing gallium nitride compound semiconductor light emitting element | |
KR101151158B1 (ko) | 화합물 반도체 발광 소자 및 그 제조 방법, 화합물 반도체 발광 소자용 도전형 투광성 전극, 램프, 전자 기기 및 기계 장치 | |
TWI416759B (zh) | 半導體發光元件、該半導體發光元件之製造方法及使用該半導體發光元件之燈具 | |
KR101014953B1 (ko) | 질화갈륨계 화합물 반도체 발광 소자, 그것의 제조 방법, 및 그것을 포함하는 램프 | |
JP2012084667A (ja) | 化合物半導体発光素子及びその製造方法、ランプ、電子機器並びに機械装置 | |
JP4252622B1 (ja) | 半導体発光素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130924 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150917 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170920 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180920 Year of fee payment: 9 |