KR20080086239A - Method of mafacuturing leadframe - Google Patents

Method of mafacuturing leadframe Download PDF

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Publication number
KR20080086239A
KR20080086239A KR1020070028178A KR20070028178A KR20080086239A KR 20080086239 A KR20080086239 A KR 20080086239A KR 1020070028178 A KR1020070028178 A KR 1020070028178A KR 20070028178 A KR20070028178 A KR 20070028178A KR 20080086239 A KR20080086239 A KR 20080086239A
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South Korea
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layer
forming
etching
metal substrate
release
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KR1020070028178A
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Korean (ko)
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성낙훈
김일산
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성낙훈
김일산
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A method of manufacturing a lead frame is provided to prevent waste of material in an etching process by separating a substrate through a release layer. A method of manufacturing a lead frame includes the steps of: forming a release layer(12) on one surface of a metal substrate(11); forming a penetration barrier layer(13) on the release layer; coating the surface of the penetration barrier layer with a photoresist and then forming a photoresist pattern by etching the photoresist through exposure and development processes; forming a plating layer(20) at an opening between the photoresist patterns of the release layer; etching and removing the photoresist pattern; forming a resin layer covering the plating layer and the penetration barrier layer; removing the metal substrate from the release layer; and etching and removing penetration barrier layer.

Description

리드프레임 제조방법{METHOD OF MAFACUTURING LEADFRAME}Leadframe manufacturing method {METHOD OF MAFACUTURING LEADFRAME}

도 1은 본 발명의 일 실시예에 따른 리드프레임의 제조방법을 도시한 공정도. 1 is a process chart showing a method of manufacturing a lead frame according to an embodiment of the present invention.

도 2 내지 도 9는 본 발명의 리드프레임의 제조방법을 단계적으로 도시한 단면도. 2 to 9 are cross-sectional views showing a method of manufacturing a lead frame of the present invention step by step.

도 10은 본 발명의 리드프레임의 도금층에 대한 구체적인 실시형태를 예시한 단면도이다. 10 is a cross-sectional view illustrating a specific embodiment of the plating layer of the lead frame of the present invention.

* 도면의 주요 부분에 대한 부호의 간단한 설명 *Brief description of symbols for the main parts of the drawings

11 : 금속기판 12 : 이형층11: metal substrate 12: release layer

13 : 침투방지층 14 : 감광층13: penetration prevention layer 14: photosensitive layer

15 : 수지층 20 : 도금층15: resin layer 20: plating layer

본 발명은 리드프레임의 제조방법에 관한 것으로, 보다 상세하게는 리드프레임 제조시에 소요되는 각종 소재를 절감함으로써 그 제조원가를 감소시킬 수 있고, 또한 에칭되는 소재의 양을 감소시킴으로써 그 에칭시간 등을 단축함과 더불어 에칭에 의한 오염을 최소화할 수 있는 리드프레임의 제조방법에 관한 것이다. The present invention relates to a method for manufacturing a lead frame, and more particularly, it is possible to reduce the manufacturing cost by reducing various materials required for manufacturing the lead frame, and also to reduce the etching time by reducing the amount of the material to be etched. In addition, the present invention relates to a method of manufacturing a lead frame, which can shorten and minimize contamination by etching.

리드프레임은 반도체 칩을 탑재하여 회로연결, 열방출 및 지지기능을 구현하는 소켓의 일종으로, 이러한 리드프레임은 구리(Cu) 또는 구리 합금 등과 같은 금속기판 상에 다양한 도금층이 형성된 타입 및 금속기판이 생략된 연성 타입(flexible lead frame) 등으로 구분된다. 최근에는 구리 등의 원가 상승으로 인해 금속기판이 생략된 연성 타입이 주로 이용되고 있다. The lead frame is a type of socket that mounts a semiconductor chip to implement circuit connection, heat dissipation, and support. The lead frame is a type of metal substrate in which various plating layers are formed on a metal substrate such as copper (Cu) or a copper alloy. The flexible lead frame is omitted. Recently, a flexible type in which a metal substrate is omitted due to an increase in cost of copper or the like is mainly used.

하지만, 이러한 종래의 연성 타입 리드프레임은 그 공정 도중에 각종 금속 소재 또는 감광층 등을 에칭하여야 하며, 이에 의해 그 에칭되는 소재의 낭비가 심각하고, 또한 그 에칭 시간이 많이 소요될 뿐만 아니라 그 에칭량에 많아 발생하여 에칭에 의한 오염이 심각한 단점이 있었다. However, such a conventional flexible type lead frame has to etch various metal materials or photosensitive layers during the process, and waste of the etched material is serious, and the etching time is not only high, but also the amount of etching There were many serious disadvantages due to the contamination caused by etching.

본 발명은 상기와 같은 점을 감안하여 안출한 것으로, 리드프레임 제조시의 에칭공정에 소요되는 각종 소재를 절감함으로써 그 제조원가를 감소시킬 수 있고, 또한 에칭되는 소재의 양을 감소시킴으로써 그 에칭시간 등을 단축함과 더불어 에칭에 의한 오염을 최소화할 수 있는 리드프레임의 제조방법을 제공하는 데 그 목적이 있다. SUMMARY OF THE INVENTION The present invention has been made in view of the above, and the manufacturing cost can be reduced by reducing various materials required for the etching process in the manufacture of a lead frame, and the etching time can be reduced by reducing the amount of the material to be etched. The purpose of the present invention is to provide a method for manufacturing a lead frame that can shorten the contamination and minimize contamination by etching.

상기와 같은 목적을 달성하기 위한 본 발명의 리드프레임 제조방법은, Lead frame manufacturing method of the present invention for achieving the above object,

금속기판의 어느 일면에 이형층을 형성하는 이형층 형성단계;A release layer forming step of forming a release layer on one surface of the metal substrate;

상기 이형층의 표면에 침투방지층을 형성하는 침투방지층 형성단계;A penetration prevention layer forming step of forming a penetration prevention layer on the surface of the release layer;

상기 침투방지층의 표면에 감광층을 도포한 후에 노광 및 현상 공정에 의해 에칭하여 소정의 감광층 패턴을 형성하는 감광층패턴 형성단계;A photosensitive layer pattern forming step of forming a predetermined photosensitive layer pattern by coating the photosensitive layer on the surface of the penetration barrier layer and etching by an exposure and development process;

상기 이형층의 감광층 패턴 사이의 개구에 도금층을 형성시키는 도금층 형성단계;A plating layer forming step of forming a plating layer in openings between the photosensitive layer patterns of the release layer;

상기 감광층 패턴을 에칭하여 제거하는 감광층 패턴제거단계;A photosensitive layer pattern removing step of etching and removing the photosensitive layer pattern;

상기 도금층 및 침투방지층의 상부면을 덮는 수지층을 형성하는 수지층 형성단계; A resin layer forming step of forming a resin layer covering upper surfaces of the plating layer and the penetration prevention layer;

상기 이형층으로부터 금속기판을 박리하여 제거하는 금속기판 제거단계; 및 A metal substrate removing step of peeling and removing the metal substrate from the release layer; And

상기 침투방지층을 에칭하여 제거하는 침투방지층 제거단계;를 포함한다. And a penetration prevention layer removing step of etching and removing the penetration prevention layer.

상기 도금층은 서로 인접하는 상기 감광층패턴의 일부 상부면을 덮도록 형성시키는 것을 특징으로 한다. The plating layer may be formed to cover a portion of the upper surface of the photosensitive layer pattern adjacent to each other.

도 1 내지 도 9는 본 발명의 일 실시예에 따른 리드프레임 제조방법을 도시한다. 1 to 9 illustrate a method of manufacturing a lead frame according to an embodiment of the present invention.

도시된 바와 같이, 본 발명의 리드프레임 제조방법은 이형층 형성단계(S1), 침투방지층 형성단계(S2), 감광층패턴 형성단계(S3), 도금층 형성단계(S4), 감광층패턴 제거단계(S5), 수지층 형성단계(S6), 금속기판 제거단계(S7), 침투방지층 제 거단계(S8)를 포함한다. As shown, the lead frame manufacturing method of the present invention is a release layer forming step (S1), a penetration preventing layer forming step (S2), photosensitive layer pattern forming step (S3), plating layer forming step (S4), photosensitive layer pattern removing step (S5), the resin layer forming step (S6), the metal substrate removal step (S7), the penetration barrier layer removing step (S8).

먼저, 도 2에 도시된 바와 같이, 구리, 니켈, 스테인레스 등의 소재로 대략 200㎛ 정도의 두께로 이루어진 금속기판(11)의 표면에 실리콘수지, 왁스, 파라핀 등과 같은 이형제를 도포하여 상대적으로 얇은 이형층(12)을 형성한다(S1). First, as shown in Figure 2, a relatively thin by applying a release agent such as silicone resin, wax, paraffin, etc. on the surface of the metal substrate 11 made of copper, nickel, stainless, etc., the thickness of about 200㎛ The release layer 12 is formed (S1).

그런 다음, 상기 이형층(12)의 표면에 구리 등과 같은 침투방지층(13)을 10㎛ 정도의 두께로 형성하고(S2), 이 침투방지층(13)은 후술하는 수지층 형성단계(S6)에 의해 형성되는 수지층(15)이 이형층(12)을 통과하여 금속기판(11)측으로 침투됨을 방지하는 역할을 한다. Then, on the surface of the release layer 12, a penetration preventing layer 13 such as copper is formed to a thickness of about 10 μm (S2), and the penetration preventing layer 13 is formed in the resin layer forming step S6 described later. It prevents the resin layer 15 formed by passing through the release layer 12 to penetrate to the metal substrate 11 side.

도 3에 도시된 바와 같이, 침투방지층(13)의 표면에 감광액(Photoresist)를 도포하여 대략 40㎛ 정도의 두께로 감광층(14)을 형성하고, 이렇게 형성된 감광층(14)을 노광 및 현상 공정 등을 통해 에칭하여 도 4에 도시된 바와 같이 다수의 감광층패턴(14a)을 형성하며, 이에 의해 다수의 감광층패턴(14a) 사이에는 노출부(14b)가 형성된다(S3). As shown in FIG. 3, a photoresist is applied to the surface of the penetration barrier layer 13 to form a photosensitive layer 14 having a thickness of about 40 μm, and the photosensitive layer 14 thus formed is exposed and developed. By etching through a process or the like, a plurality of photosensitive layer patterns 14a are formed as shown in FIG. 4, whereby an exposed portion 14b is formed between the plurality of photosensitive layer patterns 14a (S3).

도 5에 도시된 바와 같이, 인접하는 감광층패턴(14a)들 사이의 노출부(14b)에는 도금층(20)을 형성하고, 이때 도금층(20)은 감광층패턴(14a) 보다 높게 형성되며, 특히 도금층(20)은 인접하는 감광층패턴(14a)의 상부 일부면을 덮도록 형성된다(S4). As shown in FIG. 5, the plating layer 20 is formed in the exposed portions 14b between adjacent photosensitive layer patterns 14a, and the plating layer 20 is formed higher than the photosensitive layer pattern 14a. In particular, the plating layer 20 is formed to cover the upper partial surface of the adjacent photosensitive layer pattern 14a (S4).

도 6에 도시된 바와 같이 노광 및 현상 공정 등에 의해 감광층패턴(14a)을 제거되고(S5), 이에 의해 도금층(20)의 하부에는 단턱(26)이 형성된다. As shown in FIG. 6, the photosensitive layer pattern 14a is removed by an exposure and development process (S5), whereby a step 26 is formed below the plating layer 20.

이런 상태에서 에폭시 수지 등을 제2도금층(20) 및 침투방지층(13)의 상부면 에 도포시킴으로써 도 7과 같이 수지층(15)을 형성한다(S6). 이렇게 형성되는 수지층(15)은 침투방지층(13)에 의해 이형층(12) 및 금속기판(11)측으로 침투됨이 방지되고, 또한 수지층(15)은 도금층(20)의 하부에 형성된 단턱(26)로 인입되어 형성됨에 따라 수지층(15)의 이탈이 보다 효과적으로 방지되는 장점이 있다. In this state, an epoxy resin or the like is applied to the upper surfaces of the second plating layer 20 and the penetration preventing layer 13 to form the resin layer 15 as shown in FIG. 7 (S6). The resin layer 15 formed as described above is prevented from penetrating into the release layer 12 and the metal substrate 11 by the penetration preventing layer 13, and the resin layer 15 is a step formed under the plating layer 20. As the lead is formed into (26), the separation of the resin layer 15 is more effectively prevented.

그리고, 도 8에 도시된 바와 같이 이형층(12)을 통해 금속기판(11)을 박리시킴으로써 금속기판(11)이 제거되고(S7), 그런 다음 침투방지층(13)이 에칭 공정 등에 의해 제거됨(S8)으로써 도 9에 도시된 구조의 리드프레임(10)이 완성된다. Then, as shown in FIG. 8, the metal substrate 11 is removed by peeling the metal substrate 11 through the release layer 12 (S7), and then the penetration barrier layer 13 is removed by an etching process or the like ( S8), the lead frame 10 of the structure shown in FIG. 9 is completed.

한편, 본 발명의 도금층(20)은 제1도금층(21), 제2도금층(22), 제3도금층(23), 및 제4도금층(24)으로 형성될 수 있고, 제1 및 제4도금층(21)은 금(Au) 등과 같이 전도성이 양호한 재질로 이루어질 수 있으며, 제3도금층(23)은 구리 또는 구리 합금으로 이루어지고, 제2도금층(22)은 구리 등과 같은 제3도금층(23)의 확산을 방지하기 위한 니켈 소재로 이루어질 수 있다. Meanwhile, the plating layer 20 of the present invention may be formed of the first plating layer 21, the second plating layer 22, the third plating layer 23, and the fourth plating layer 24, and the first and fourth plating layers. 21 may be made of a material having good conductivity such as gold (Au), the third plating layer 23 is made of copper or a copper alloy, and the second plating layer 22 is a third plating layer 23 such as copper. It may be made of a nickel material to prevent the diffusion of.

이상과 같은 본 발명은, 금속기판(11)을 이형층(12)을 통해 보다 용이하게 제거함으로써 에칭 공정에 소요되는 소재의 양을 감소시켜 그 소재비용을 절감할 수 있고, 이에 의해 그 전체적인 제조비용을 대폭 감소시킬 수 있는 장점이 있다. In the present invention as described above, by removing the metal substrate 11 through the release layer 12 more easily, it is possible to reduce the amount of material required for the etching process to reduce the material cost, thereby the overall manufacturing There is an advantage that can significantly reduce the cost.

상기와 같은 본 발명은, 리드프레임 제조시의 에칭공정에 소요되는 각종 소재를 절감함으로써 그 제조원가를 감소시킬 수 있고, 또한 에칭되는 소재의 양을 감소시킴으로써 그 에칭시간 등을 단축함과 더불어 에칭에 의한 오염을 최소화할 수 있는 장점이 있다. The present invention as described above can reduce the manufacturing cost by reducing the various materials required for the etching process in the manufacture of lead frame, and also reduce the etching time and the like by reducing the amount of the material to be etched, There is an advantage that can minimize the contamination by.

Claims (2)

금속기판의 어느 일면에 이형층을 형성하는 이형층 형성단계;A release layer forming step of forming a release layer on one surface of the metal substrate; 상기 이형층의 표면에 침투방지층을 형성하는 침투방지층 형성단계;A penetration prevention layer forming step of forming a penetration prevention layer on the surface of the release layer; 상기 침투방지층의 표면에 감광층을 도포한 후에 노광 및 현상 공정에 의해 에칭하여 소정의 감광층 패턴을 형성하는 감광층패턴 형성단계;A photosensitive layer pattern forming step of forming a predetermined photosensitive layer pattern by coating the photosensitive layer on the surface of the penetration barrier layer and etching by an exposure and development process; 상기 이형층의 감광층 패턴 사이의 개구에 도금층을 형성시키는 도금층 형성단계;A plating layer forming step of forming a plating layer in openings between the photosensitive layer patterns of the release layer; 상기 감광층 패턴을 에칭하여 제거하는 감광층 패턴제거단계;A photosensitive layer pattern removing step of etching and removing the photosensitive layer pattern; 상기 도금층 및 침투방지층의 상부면을 덮는 수지층을 형성하는 수지층 형성단계; A resin layer forming step of forming a resin layer covering upper surfaces of the plating layer and the penetration prevention layer; 상기 이형층으로부터 금속기판을 박리하여 제거하는 금속기판 제거단계; 및 A metal substrate removing step of peeling and removing the metal substrate from the release layer; And 상기 침투방지층을 에칭하여 제거하는 침투방지층 제거단계;를 포함하는 것을 특징으로 하는 리드프레임의 제조방법.And a penetration prevention layer removing step of etching and removing the penetration prevention layer. 제1항에 있어서, The method of claim 1, 상기 도금층은 서로 인접하는 상기 감광층패턴의 일부 상부면을 덮도록 형성시키는 것을 특징으로 하는 리드프레임의 제조방법. The plating layer is a manufacturing method of the lead frame, characterized in that formed to cover the upper surface of the portion of the photosensitive layer pattern adjacent to each other.
KR1020070028178A 2007-03-22 2007-03-22 Method of mafacuturing leadframe KR20080086239A (en)

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