KR20080063177A - Sn-B 도금액 및 이를 이용한 도금 방법 - Google Patents
Sn-B 도금액 및 이를 이용한 도금 방법 Download PDFInfo
- Publication number
- KR20080063177A KR20080063177A KR1020070139768A KR20070139768A KR20080063177A KR 20080063177 A KR20080063177 A KR 20080063177A KR 1020070139768 A KR1020070139768 A KR 1020070139768A KR 20070139768 A KR20070139768 A KR 20070139768A KR 20080063177 A KR20080063177 A KR 20080063177A
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- Prior art keywords
- plating
- plating solution
- ion source
- lead
- layer
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/30—Electrolytic production, recovery or refining of metals by electrolysis of melts of manganese
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (10)
- 납 이온을 포함하지 않고, Sn 이온공급원인 황산주석(Tin Sulfate)과, B 이온공급원인 디메틸아민보란(dimethyl amine borane) 또는 트리메틸아민보란(trimethyl amine borane)으로 조성된 것을 특징으로 하는 Sn-B 도금액.
- 제1항에 있어서, 상기 Sn 이온공급원은 15 g/L 내지 50 g/L 포함된 것을 특징으로 하는 Sn-B 합금 도금액.
- 제1항에 있어서, 상기 B 이온공급원은 0.1 g/L 내지 3.0 g/L 포함된 것을 특징으로 하는 Sn-B 도금액.
- 제1항에 있어서, 황산이 30 ml/L 내지 70 ml/L 더 포함된 것을 특징으로 하는 Sn-B 도금액.
- 제1항에 있어서, 크레졸술폰산(Cresolsulfonic acid) 또는 페놀술폰산(phenolsulfonic acid)이 10 g/L 내지 40 g/L 더 포함된 것을 특징으로 하는 Sn-B 도금액.
- 제1항에 있어서, 베타 나프톨(β-Naphtol)이 0.1 g/L 내지 0.5 g/L 더 포함 된 것을 특징으로 하는 Sn-B 도금액.
- 제1항에 있어서, 젤라틴(Gelatin)이 0.1 g/L 내지 3 g/L 더 포함된 것을 특징으로 하는 Sn-B 도금액.
- 납 이온을 포함하지 않고, Sn 이온공급원인 황산주석(Tin Sulfate)과, B 이온공급원인 디메틸아민보란(dimethyl amine borane) 또는 트리메틸아민보란(trimethyl amine borane)으로 조성된 Sn-B 도금액을 이용하여 도금하는 Sn-B 도금 방법.
- 제8항에 있어서, 전류밀도 0.5 A/dm2 내지 5 A/dm2로 도금하는 Sn-B 도금 방법.
- 제8항 또는 제9항에 있어서, 상기 도금액에서 상기 Sn 이온공급원은 15 g/L 내지 50 g/L 포함되고, 상기 B 이온공급원은 0.1 g/L 내지 3.0 g/L 포함되며, 황산 30 ml/L 내지 70 ml/L, 크레졸술폰산(Cresolsulfonic acid) 또는 페놀술폰산(phenolsulfonic acid) 10 g/L 내지 40 g/L, 베타 나프톨(β-Naphtol) 0.1 g/L 내지 0.5 g/L, 젤라틴(Gelatin) 0.1 g/L 내지 3 g/L가 더 포함된 것을 특징으로 하는 Sn-B 도금 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07860736A EP2126159A4 (en) | 2006-12-29 | 2007-12-28 | SN-B SEPARATION SOLUTION AND SEPARATION METHOD THEREWITH |
PCT/KR2007/006952 WO2008082192A1 (en) | 2006-12-29 | 2007-12-28 | Sn-b plating solution and plating method using it |
CN2007800475367A CN101595248B (zh) | 2006-12-29 | 2007-12-28 | Sn-B电镀液以及使用该电镀液的电镀方法 |
US12/521,338 US20100038255A1 (en) | 2006-12-29 | 2007-12-28 | Sn-b plating solution and plating method using it |
JP2009543955A JP5033197B2 (ja) | 2006-12-29 | 2007-12-28 | Sn−Bメッキ液及びこれを使用したメッキ法 |
TW097123945A TWI386523B (zh) | 2006-12-29 | 2008-06-26 | SnB電鍍液以及使用該電鍍液的電鍍方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060138526 | 2006-12-29 | ||
KR1020060138526 | 2006-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080063177A true KR20080063177A (ko) | 2008-07-03 |
KR101016415B1 KR101016415B1 (ko) | 2011-02-21 |
Family
ID=39815105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070139768A KR101016415B1 (ko) | 2006-12-29 | 2007-12-28 | 전기 도금용 Sn-B 도금액 및 이를 이용한 Sn-B 전기 도금 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100038255A1 (ko) |
EP (1) | EP2126159A4 (ko) |
JP (1) | JP5033197B2 (ko) |
KR (1) | KR101016415B1 (ko) |
CN (1) | CN101595248B (ko) |
TW (1) | TWI386523B (ko) |
WO (1) | WO2008082192A1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US10072347B2 (en) * | 2012-07-31 | 2018-09-11 | The Boeing Company | Systems and methods for tin antimony plating |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
CN105908227A (zh) * | 2016-06-03 | 2016-08-31 | 河海大学 | 一种提高Ni-B合金耐蚀耐磨性能的CMMA结构电化学制备方法 |
CN105887148A (zh) * | 2016-06-03 | 2016-08-24 | 河海大学 | 一种海洋装备用Ni-B/SiC CMMA涂层及其制备方法 |
CN106011956A (zh) * | 2016-06-03 | 2016-10-12 | 河海大学 | 一种提高Ni-W合金耐蚀性的CMMA结构电化学制备方法 |
CN106011955A (zh) * | 2016-06-03 | 2016-10-12 | 河海大学 | 一种海工机械耐蚀耐磨Ni-W/Al2O3 CMMA防护层及其制备方法 |
CN105908228A (zh) * | 2016-06-03 | 2016-08-31 | 河海大学 | 一种镍合金cmma镀层及其制备方法 |
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GB842826A (en) * | 1957-11-15 | 1960-07-27 | Du Pont | Improvements in or relating to chemical plating |
US3063850A (en) * | 1959-09-11 | 1962-11-13 | Metal Hydrides Inc | Metal plating by chemical reduction with amine boranes |
JPS529638A (en) * | 1975-07-15 | 1977-01-25 | Sumitomo Electric Industries | Tinnelectroplating solution |
US4955909A (en) * | 1989-01-31 | 1990-09-11 | Bioplasty, Inc. | Textured silicone implant prosthesis |
US5207709A (en) * | 1991-11-13 | 1993-05-04 | Picha George J | Implant with textured surface |
CN1094099A (zh) * | 1994-03-24 | 1994-10-26 | 天津大学 | 一种酸性镀锡的方法 |
KR100223320B1 (ko) | 1996-03-06 | 1999-10-15 | 이계철 | 전기접점용 주석-납 합금도금 제조방법 |
GB9805214D0 (en) * | 1998-03-11 | 1998-05-06 | Univ Glasgow | Cell adhesion |
WO2000015876A1 (fr) | 1998-09-11 | 2000-03-23 | Nippon Mining & Metals Co., Ltd. | Materiau metallique |
JP2000144482A (ja) * | 1998-09-11 | 2000-05-26 | Nippon Mining & Metals Co Ltd | 金属材料 |
JP2000169997A (ja) * | 1998-09-28 | 2000-06-20 | Nippon Mining & Metals Co Ltd | 金属材料 |
JP2000169996A (ja) * | 1998-09-28 | 2000-06-20 | Nippon Mining & Metals Co Ltd | 金属材料 |
JP4489232B2 (ja) * | 1999-06-14 | 2010-06-23 | 日鉱金属株式会社 | コネクタ用めっき材料 |
JP4698904B2 (ja) * | 2001-09-20 | 2011-06-08 | 株式会社大和化成研究所 | 錫又は錫系合金めっき浴、該めっき浴の建浴用又は維持・補給用の錫塩及び酸又は錯化剤溶液並びに該めっき浴を用いて製作した電気・電子部品 |
JP3513709B2 (ja) * | 2001-10-16 | 2004-03-31 | 石原薬品株式会社 | 前処理によるスズホイスカーの防止方法 |
US6860981B2 (en) * | 2002-04-30 | 2005-03-01 | Technic, Inc. | Minimizing whisker growth in tin electrodeposits |
KR100680650B1 (ko) * | 2002-11-29 | 2007-02-08 | 미츠이 마이닝 & 스멜팅 콤파니 리미티드 | 비수전해액 이차전지용 부극 및 그 제조방법 및 비수전해액이차전지 |
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EP1696052B1 (en) * | 2005-02-28 | 2010-10-06 | Rohm and Haas Electronic Materials, L.L.C. | Improved fluxing methods |
US20080275546A1 (en) * | 2007-05-03 | 2008-11-06 | Chameleon Scientific Corp | Inhibitory cell adhesion surfaces |
-
2007
- 2007-12-28 US US12/521,338 patent/US20100038255A1/en not_active Abandoned
- 2007-12-28 EP EP07860736A patent/EP2126159A4/en not_active Withdrawn
- 2007-12-28 WO PCT/KR2007/006952 patent/WO2008082192A1/en active Application Filing
- 2007-12-28 CN CN2007800475367A patent/CN101595248B/zh active Active
- 2007-12-28 JP JP2009543955A patent/JP5033197B2/ja not_active Expired - Fee Related
- 2007-12-28 KR KR1020070139768A patent/KR101016415B1/ko active IP Right Grant
-
2008
- 2008-06-26 TW TW097123945A patent/TWI386523B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR101016415B1 (ko) | 2011-02-21 |
JP2010514932A (ja) | 2010-05-06 |
TW200928006A (en) | 2009-07-01 |
US20100038255A1 (en) | 2010-02-18 |
TWI386523B (zh) | 2013-02-21 |
JP5033197B2 (ja) | 2012-09-26 |
CN101595248A (zh) | 2009-12-02 |
WO2008082192A1 (en) | 2008-07-10 |
EP2126159A1 (en) | 2009-12-02 |
EP2126159A4 (en) | 2010-06-02 |
CN101595248B (zh) | 2011-04-27 |
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