KR20080002525A - Aging circuit for oled panel - Google Patents

Aging circuit for oled panel Download PDF

Info

Publication number
KR20080002525A
KR20080002525A KR1020060061405A KR20060061405A KR20080002525A KR 20080002525 A KR20080002525 A KR 20080002525A KR 1020060061405 A KR1020060061405 A KR 1020060061405A KR 20060061405 A KR20060061405 A KR 20060061405A KR 20080002525 A KR20080002525 A KR 20080002525A
Authority
KR
South Korea
Prior art keywords
transistor
emitting diode
organic light
light emitting
aging
Prior art date
Application number
KR1020060061405A
Other languages
Korean (ko)
Other versions
KR101243159B1 (en
Inventor
한인효
김중철
Original Assignee
엘지.필립스 엘시디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지.필립스 엘시디 주식회사 filed Critical 엘지.필립스 엘시디 주식회사
Priority to KR1020060061405A priority Critical patent/KR101243159B1/en
Publication of KR20080002525A publication Critical patent/KR20080002525A/en
Application granted granted Critical
Publication of KR101243159B1 publication Critical patent/KR101243159B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An aging circuit of an OLED(Organic Light-Emitting Diode) panel is provided to enhance image quality by reducing leakage current according to a TFT(Thin Film Transistor) aging. An aging circuit of an OLED(Organic Light-Emitting Diode) panel includes first to eighth transistors(T1-T8), an organic light emitting diode(OLED), and a capacitor(C). The first and fifth transistors(T1,T5) and the organic light emitting diode are series-connected between source voltage and ground terminals. The second transistor is parallel-connected to the first transistor. The third transistor and capacitor deliver RGB data to a gate of the first transistor. The fourth transistor delivers a reference voltage to the gate of the first transistor. The sixth and seventh transistors deliver gate-off signals and the RGB data voltages to a scan terminal and the source of the third transistor, respectively, according to a first enable signal. The eighth transistor delivers an illumination control signal to the gates of fourth and fifth transistors according to a second enable signal.

Description

유기발광다이오드 패널의 에이징 회로{AGING CIRCUIT FOR OLED PANEL}Aging circuit of organic light emitting diode panel {AGING CIRCUIT FOR OLED PANEL}

도 1은 본 발명에 의한 유기발광다이오드 패널의 에이징 회로도.1 is an aging circuit diagram of an organic light emitting diode panel according to the present invention.

도 2는 본 발명에 의한 누설전류 에이징 타이밍도. 2 is a leakage current aging timing diagram according to the present invention.

도 3의 (a),(b)는 루미넌스 에이징을 수행하기 전후의 발광특성 그래프. 3 (a) and 3 (b) are graphs of light emission characteristics before and after performing luminance aging;

***도면의 주요 부분에 대한 부호의 설명*** *** Description of the symbols for the main parts of the drawings ***

T1-T8 : 트랜지스터 C : 콘덴서T1-T8: Transistor C: Capacitor

본 발명은 유기발광다이오드(OLED)의 화질 및 수명 특성을 개선하는 기술에 관한 것으로, 특히 에이징(Aging)을 통해 유기발광다이오드의 화질 특성과 수명을 개선할 수 있도록 한 유기발광다이오드 패널의 에이징 회로에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for improving the image quality and lifespan characteristics of an organic light emitting diode (OLED), and in particular, an aging circuit of an organic light emitting diode panel which can improve the image quality characteristics and life of an organic light emitting diode through aging It is about.

근래 들어, 음극선관을 대체할 평판 표시장치로 액정표시장치(LCD), 전계방출 표시장치(Field Emission Display), 플라즈마 표시장치(PDP) 및 유기발광소자(OLED: Organic Light Emitting Device, 이하 '유기발광다이오드'라 한다) 등의 개발되었다.Recently, liquid crystal displays (LCDs), field emission displays (PDPs), organic light emitting devices (OLEDs) and organic light emitting devices (OLEDs) may be used as flat panel displays to replace cathode ray tubes. Light emitting diodes').

상기 평판 표시장치 중에서 유기발광다이오드는 유기물 박막에 음극과 양극을 통하여 주입된 전자와 정공이 재결합(recombination)하여 여기자(exciton)를 형성하고, 이렇게 형성된 여기자로부터의 에너지에 의해 특정한 파장의 빛이 발생되는 현상을 이용한 표시소자이다.In the flat panel display, an organic light emitting diode recombines electrons and holes injected through a cathode and an anode to an organic thin film to form excitons, and light having a specific wavelength is generated by energy from the excitons formed as described above. It is a display device using the phenomenon.

일반적으로, 유기발광다이오드 패널의 화질 특성을 개선하거나, 수명 특성을 개선하기 위해서는 이에 따른 적절한 에이징 기술이 요구된다. 그럼에도 불구하고, 종래의 유기발광다이오드 패널에 있어서는 그러한 에이징 기술이 마련되어 있지 않아 화질 특성을 개선하거나, 수명을 연장하는데 어려움이 있었다. In general, in order to improve the image quality characteristics of the organic light emitting diode panel or to improve the life characteristics, an appropriate aging technique is required. Nevertheless, in the conventional organic light emitting diode panel, such an aging technique is not provided, which makes it difficult to improve the image quality characteristics or to extend the lifespan.

따라서, 본 발명의 목적은 유기발광다이오드 패널의 화질 특성을 개선하거나, 수명 특성을 개선하기 위한 에이징 회로를 제공함에 있다.Accordingly, an object of the present invention is to provide an aging circuit for improving the image quality characteristics of the organic light emitting diode panel or for improving the life characteristics.

상기와 같은 목적을 달성하기 위한 본 발명은, 화소전원단자와 접지단자 사이에 직렬 접속된 제1,5트랜지스터 및 유기발광다이오드와; 게이트가 스캔단자에 접속되고, 소스,드레인이 상기 제1트랜지스터의 드레인,소스에 각기 접속된 제2트랜지스터와; R,G,B 데이터전압을 상기 제1트랜지스터의 게이트에 전달하기 위한 제3트랜지스터 및 콘덴서와; 기준전압을 상기 제1트랜지스터의 게이트에 전달하기 위한 제4트랜지스터로 구성된 유기발광다이오드 구동회로에 있어서,The present invention for achieving the above object, the first and fifth transistor and the organic light emitting diode connected in series between the pixel power terminal and the ground terminal; A second transistor having a gate connected to the scan terminal, a source and a drain connected to a drain and a source of the first transistor, respectively; A third transistor and a capacitor for transmitting R, G, and B data voltages to a gate of the first transistor; In the organic light emitting diode driving circuit comprising a fourth transistor for transmitting a reference voltage to the gate of the first transistor,

제1인에이블신호에 의해 턴온되어 게이트오프신호를 스캔단자에 전달하는 제6트랜지스터와; 제1인에이블신호에 의해 턴온되어 상기 R,G,B 데이터전압을 상기 제3트랜지스터의 소스에 전달하는 제7트랜지스터와; 제2인에이블신호에 의해 턴온되어 발광제어신호를 상기 제4,5트랜지스터의 게이트에 전달하는 제8트랜지스터를 추가로 구성하여 트랜지스터 에지징과 유기발광다이오드 에이징을 수행하도록 구성함을 특징으로 한다.A sixth transistor turned on by the first enable signal and transferring a gate-off signal to the scan terminal; A seventh transistor turned on by a first enable signal to transfer the R, G, and B data voltages to a source of the third transistor; And an eighth transistor configured to be turned on by the second enable signal and to transfer the light emission control signal to the gates of the fourth and fifth transistors to perform transistor edge and organic light emitting diode aging.

이하, 첨부한 도면을 참조하여 본 발명에 따른 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 의한 유기발광다이오드 패널의 에이징 회로도로서 이에 도시한 바와 같이, 화소전원단자(VDD_EL)와 접지단자(VDD) 사이에 직렬 접속된 제1,5트랜지스터(T1),(T5) 및 유기발광다이오드(OLED)와; 게이트는 스캔단자(SCAN)에 접속되고, 소스,드레인이 상기 제1트랜지스터(T1)의 드레인,소스에 각기 접속된 제2트랜지스터(T2)와; 데이터전압(R,G,B)을 상기 제1트랜지스터(T1)의 게이트에 전달하기 위한 제3트랜지스터(T3) 및 콘덴서(C)와; 기준전압(Vref)을 상기 제1트랜지스터(T1)의 게이트에 전달하기 위한 제4트랜지스터(T4)와; 게이트에 공급되는 인에이블신호(VEN)에 의해 턴온되어 게이트오프신호(VGOFF)를 스캔단자(SCAN)에 전달하는 제6트랜지스터(T6)와; 게이트에 공급되는 인에이블신호(VEN)에 의해 턴온되어 데이터전압(R,G,B)을 상기 제3트랜지스터(T3)의 소스에 전달하는 제7트랜지스터(T7)와; 게이트에 공급되는 인에이블신호(VEM_EN)에 의해 턴온되어 발광제어신호(VEM)를 상기 제4,5트랜지스터(T4),(T5)의 게이트에 전달하는 제8트랜지스터(T8)로 구성하여, 트랜지스터 에지징과 유기발광다이오드 에이징을 수행하도록 구성한 것으로, 이와 같이 구성한 본 발명의 작용을 첨부한 도 2 및 도 3을 참조하여 상세히 설명하면 다음과 같다.1 is an aging circuit diagram of an organic light emitting diode panel according to an embodiment of the present invention. As shown therein, first and fifth transistors T1 and T5 connected in series between a pixel power supply terminal VDD_EL and a ground terminal VDD. And an organic light emitting diode (OLED); A gate is connected to the scan terminal SCAN, and a source and a drain are respectively connected to a drain and a source of the first transistor T1; A third transistor (T3) and a capacitor (C) for transferring data voltages (R, G, B) to the gate of the first transistor (T1); A fourth transistor T4 for transferring a reference voltage Vref to the gate of the first transistor T1; A sixth transistor T6 that is turned on by the enable signal VEN supplied to the gate and transfers the gate-off signal VGOFF to the scan terminal SCAN; A seventh transistor T7 turned on by the enable signal VEN supplied to the gate to transfer the data voltages R, G, and B to a source of the third transistor T3; The transistor is configured by an eighth transistor T8 that is turned on by the enable signal VEM_EN supplied to the gate and transfers the emission control signal VEM to the gates of the fourth and fifth transistors T4 and T5. It is configured to perform the edge and the organic light emitting diode aging, it will be described in detail with reference to Figures 2 and 3 attached to the operation of the present invention configured as described above.

먼저, 트랜지스터(T2)의 누설전류에 의한 화질 불균일을 해소하기 위한 티에프티-에이징(TFT-Aging) 모드는 다음과 같이 수행된다.First, a TFT-Aging mode for resolving image quality unevenness due to leakage current of the transistor T2 is performed as follows.

인에이블신호(VEN),(VEM_EN) 및 발광제어신호(VEM)를 부극성 전압('-')으로 공급하고, 화소전원(VDD_EL)을 0V로 공급한다. 또한, 게이트오프신호(VGOFF)를 정극성 전압('+')으로 공급하고, 접지단자전압(GND)을 정극성과 부극성이 교번되게 나타나는 AC전압으로 공급한다. The enable signals VEN and VEM_EN and the emission control signal VEM are supplied with the negative voltage '-', and the pixel power source VDD_EL is supplied with 0V. The gate-off signal VGOFF is supplied to the positive polarity voltage '+', and the ground terminal voltage GND is supplied to an AC voltage in which the positive and negative polarities alternately appear.

이에 따라, 데이터전압(R,G,B)이 트랜지스터(T7),(T3)을 순차적으로 통해 트랜지스터(T2)의 소스측에 전달된다. 이에 따라, 상기 트랜지스터(T2)가 상기 데이터전압(R,G,B)에 의해 오프 스테이트 스트레스(Off-state stress) 상태로 된다. Accordingly, the data voltages R, G, and B are sequentially transmitted to the source side of the transistor T2 through the transistors T7 and T3. Accordingly, the transistor T2 enters an off-state stress state by the data voltages R, G, and B.

이때, 상기 접지단자전압(GND)이 AC전압으로 공급되어 상기 트랜지스터(T2)가 양방향으로 스트레스를 받게 된다. 이에 따라, 누설전류가 감소되고, 화질이 개선된다. At this time, the ground terminal voltage GND is supplied to an AC voltage, and the transistor T2 is stressed in both directions. Accordingly, leakage current is reduced, and image quality is improved.

여기서, 상기 데이터전압(R,G,B)은 가변이 가능하고, 에이징 타임(Aging time)과 주파수는 트랜지스터의 특성에 따라 변경될 수 있다. The data voltages R, G, and B may be variable, and the aging time and frequency may be changed according to the characteristics of the transistor.

한편, 유기발광다이오드(OLED)에 역전압을 인가하여 유기물과 애노드(ITO 또는 IZO)와의 물리적, 화학적 접합 특성을 개선하기 위한 리버스 에이징(Reverse-aging) 모드는 다음과 같이 수행된다.On the other hand, the reverse-aging mode for applying a reverse voltage to the organic light emitting diode (OLED) to improve the physical and chemical bonding characteristics of the organic material and the anode (ITO or IZO) is performed as follows.

인에이블신호(VEN),(VEM_EN)를 게이트 개방전압(부극성 전압)으로 공급하고, 게이트오프신호(VGOFF),발광제어신호(VEM)를 -20V 이상의 부극성 전압으로 공급하며, 화소전원(VDD_EL)과 기준전압(Vref)은 AC전압으로 공급한다. The enable signals VEN and VEM_EN are supplied as the gate open voltage (negative polarity voltage), the gate off signal VGOFF and the emission control signal VEM are supplied as negative voltages of -20V and higher, and the pixel power source ( VDD_EL) and the reference voltage Vref are supplied as AC voltages.

이에 따라, 트랜지스터(T1),(T5)의 게이트에 충분한 온 바이어스 전압이 인가되어 이들이 턴온되고, 이에 의해 유기발광다이오드(OLED)의 양단에 부극성 전압과 정극성 전압이 교번되게 인가된다. 따라서, 상기 유기발광다이오드(OLED)의 접합면 및 계면의 트랩(trap) 및 모바일 차지(mobile charge)가 개선된다. Accordingly, sufficient on-bias voltages are applied to the gates of the transistors T1 and T5 so that they are turned on, whereby the negative voltage and the positive voltage are alternately applied to both ends of the organic light emitting diode OLED. Therefore, trap and mobile charge of the bonding surface and the interface of the organic light emitting diode OLED are improved.

한편, 유기발광다이오드(OLED)의 누설전류(Leakage current)를 측정하여 양품대비 큰 값이 검출되었다면, 이는 시간이 경과됨에 따라 불량으로 나타날 수 있다. 따라서, 상기와 같은 불량을 방지하기 위해 누설전류 에이징을 실시하게 되는데, 이 누설전류 에이징(Leakage-aging) 모드는 도 2의 타이밍도와 같이 수행된다.On the other hand, if a large value compared to a good product is detected by measuring the leakage current of the organic light emitting diode OLED, this may appear to be defective as time passes. Accordingly, leakage current aging is performed to prevent such defects. The leakage current aging mode is performed as shown in the timing diagram of FIG. 2.

즉, 상기 트랜지스터(T2)의 게이트에 공급되는 스캔신호(SCAN)를 일정 시간 동안 0V로 공급하다가 15V로 상승시키고, 기준전압(Vref)을 상기 스캔신호(SCAN)보다 조금 더 오랫동안 0V로 공급하다가 15V로 상승시키고, 접지단자전압(GND)를 상기 기준전압(Vref)보다 조금 더 오랫동안 0V로 공급하다가 15V로 상승시킨다.That is, the scan signal SCAN supplied to the gate of the transistor T2 is supplied at 0V for a predetermined time and then raised to 15V, and the reference voltage Vref is supplied at 0V for a little longer than the scan signal SCAN. The voltage is raised to 15V and the ground terminal voltage GND is supplied to 0V for a little longer than the reference voltage Vref, and then raised to 15V.

이때, 화소전원(VDD_EL), 데이터전압(R,G,B), 발광제어신호(VEM)는 0V로 공급한다. At this time, the pixel power source VDD_EL, the data voltages R, G, and B, and the emission control signal VEM are supplied at 0V.

한편, 유기발광다이오드(OLED)의 초기 열화 즉, 수명 개선을 위해 루미넌스 에이징(Luminance-aging) 모드는 다음과 같이 수행된다.Meanwhile, the luminance aging mode is performed as follows to initially deteriorate the organic light emitting diode (OLED), that is, to improve the lifetime.

상기 모든 트랜지스터(TFT1-TFT8)를 완전히 온시키고, 유기발광다이오드(OLED)가 1500nit 밝기의 빛을 발하도록 화소전원(VDD_EL) 및 데이터전압(R,G,B)을 설정하여 공급한다. All the transistors TFT1-TFT8 are turned on completely, and the pixel power source VDD_EL and the data voltages R, G, and B are set and supplied such that the organic light emitting diode OLED emits light having a brightness of 1500 nits.

도 3의 (a)는 상기와 같은 루미넌스 에이징을 수행하기 이전의 유기발광다이오 드(OLED)의 발광특성 그래프이고, 도 3의 (b)는 상기와 같은 루미넌스 에이징을 수행한 후의 유기발광다이오드(OLED)의 발광특성 그래프이다. 이에 도시한 바와 같이 초기에 높은 휘도를 나타내다가 곧바로 뚝 떨어지는 현상이 개선된 것을 알 수 있다.Figure 3 (a) is a graph of the light emission characteristics of the organic light emitting diode (OLED) before performing the above-described luminance aging, Figure 3 (b) is an organic light emitting diode after performing the above-described luminance aging ( OLED) light emission characteristic graph. As shown in the drawing, the phenomenon of falling down immediately after showing high luminance at an early stage can be seen.

참고로, 도 1에서 트랜지스터(T1-T5)는 유기발광다이오드(OLED)를 구동하기 위해 패널에 고정설치된 트랜지스터이고, 나머지 트랜지스터(T6-T8)는 본 발명의 에이징을 수행하기 위해 상기 트랜지스터(T6-T8)와 별도로 패널의 일측에 설치된 트랜지스터이다.For reference, in FIG. 1, the transistors T1-T5 are transistors fixed to a panel to drive the organic light emitting diode OLED, and the other transistors T6-T8 are transistors T6 for performing aging of the present invention. -T8) is a transistor installed on one side of the panel.

그리고, 도 1에서는 기준전압(Vref)의 단자가 접지단자(GND)와 분리된 것으로 도시하였으나, 이는 에이징을 위해 임시로 분리한 것이고 실제 사용시에는 서로 연결되어 있다. In addition, although the terminal of the reference voltage Vref is illustrated as being separated from the ground terminal GND in FIG. 1, it is temporarily separated for aging and connected to each other in actual use.

이상에서 상세히 설명한 바와 같이 본 발명은, 티에프티 에이징(TFT-Aging)을 수행하여 누설전류가 감소되고 온 영역특성이 개선되게 함으로써, 화질이 개선되는 효과가 있다. As described in detail above, the present invention performs the TFT-Aging to reduce the leakage current and to improve the on-region characteristics, thereby improving image quality.

또한, 유기발광다이오드에 대한 에이징을 수행하여 그 유기발광다이오드의 수명이 개선되는 효과가 있다.In addition, the aging of the organic light emitting diode is performed to improve the life of the organic light emitting diode.

Claims (8)

화소전원단자와 접지단자 사이에 직렬 접속된 제1,5트랜지스터 및 유기발광다이오드와;First and fifth transistors and an organic light emitting diode connected in series between the pixel power terminal and the ground terminal; 게이트가 스캔단자에 접속되고, 소스,드레인이 상기 제1트랜지스터의 드레인,소스에 각기 접속된 제2트랜지스터와;A second transistor having a gate connected to the scan terminal, a source and a drain connected to a drain and a source of the first transistor, respectively; R,G,B 데이터전압을 상기 제1트랜지스터의 게이트에 전달하기 위한 제3트랜지스터 및 콘덴서와;A third transistor and a capacitor for transmitting R, G, and B data voltages to a gate of the first transistor; 기준전압을 상기 제1트랜지스터의 게이트에 전달하기 위한 제4트랜지스터로 구성된 유기발광다이오드 구동회로에 있어서,In the organic light emitting diode driving circuit comprising a fourth transistor for transmitting a reference voltage to the gate of the first transistor, 제1인에이블신호에 의해 턴온되어 게이트오프신호를 스캔단자에 전달하는 제6트랜지스터와;A sixth transistor turned on by the first enable signal and transferring a gate-off signal to the scan terminal; 제1인에이블신호에 의해 턴온되어 상기 R,G,B 데이터전압을 상기 제3트랜지스터의 소스에 전달하는 제7트랜지스터와;A seventh transistor turned on by a first enable signal to transfer the R, G, and B data voltages to a source of the third transistor; 제2인에이블신호에 의해 턴온되어 발광제어신호를 상기 제4,5트랜지스터의 게이트에 전달하는 제8트랜지스터를 추가하여 트랜지스터 에지징과 유기발광다이오드 에이징을 수행하도록 구성한 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.An organic light emitting diode panel configured to perform transistor edge and organic light emitting diode aging by adding an eighth transistor that is turned on by a second enable signal and transmits an emission control signal to the gates of the fourth and fifth transistors Aging circuit. 제1항에 있어서, 제1,2인에이블신호 및 발광제어신호를 부극성 전압으로 공급하 고, 화소전원을 0V로 공급하고, 게이트오프신호를 정극성 전압으로 공급하고, 접지단자전압을 교류전압으로 공급하여 제2트랜지스터에 대한 에이징이 수행되도록 구성된 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.2. The method of claim 1, wherein the first and second enable signals and the light emission control signal are supplied at a negative voltage, the pixel power is supplied at 0 V, the gate-off signal is supplied at a positive voltage, and the ground terminal voltage is alternating. An aging circuit of an organic light emitting diode panel, characterized in that the aging is performed to supply the voltage to the second transistor. 제2항에 있어서, 에이징 수행시간은 가변적으로 설정되는 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The aging circuit of an organic light emitting diode panel according to claim 2, wherein the aging execution time is set to be variable. 제1항에 있어서, 제1,2인에이블신호를 게이트 개방전압(부극성 전압)으로 공급하고, 게이트오프신호,발광제어신호를 -20V 이상의 부극성 전압으로 공급하며, 화소전원과 기준전압을 교류전압으로 공급하여 상기 유기발광다이오드에 리버스 에이징이 수행되도록 구성된 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The display device of claim 1, wherein the first and second enable signals are supplied at a gate open voltage (negative polarity voltage), the gate off signal and the emission control signal are supplied at a negative polarity voltage of -20V or more, and Aging circuit of the organic light emitting diode panel, characterized in that the reverse aging is performed to the organic light emitting diode by supplying an AC voltage. 제4항에 있어서, 유기발광다이오드에 리버스 에이징은 유기발광다이오드(OLED)에서의 유기물과 애노드와의 물리적, 화학적 접합 특성을 개선하기 위한 에이징 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The aging circuit of an organic light emitting diode panel according to claim 4, wherein reverse aging of the organic light emitting diode is for aging to improve physical and chemical bonding properties of the organic material and the anode in the organic light emitting diode (OLED). 제1항에 있어서, 제2트랜지스터의 게이트에 공급되는 스캔신호를 일정 시간 동안 0V로 공급하다가 15V로 상승시키고, 상기 기준전압은 상기 스캔신호보다 조금 더 오랫동안 0V로 공급하다가 15V로 상승시키고, 접지단자전압은 상기 기준전압보 다 조금 더 오랫동안 0V로 공급하다가 15V로 상승시켜 누설전류 에이징이 수행되도록 구성된 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The method of claim 1, wherein the scan signal supplied to the gate of the second transistor is supplied to 0V for a predetermined time and then raised to 15V, and the reference voltage is supplied to 0V for a little longer than the scan signal and then raised to 15V and grounded. An aging circuit of an organic light emitting diode panel, wherein the terminal voltage is supplied to 0 V for a little longer than the reference voltage and then increased to 15 V to perform leakage current aging. 제6항에 있어서, 누설전류 에이징이 수행될 때, 화소전원, R,G,B 데이터전압, 발광제어신호는 0V로 공급하는 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The aging circuit of an organic light emitting diode panel according to claim 6, wherein when the leakage current aging is performed, the pixel power source, the R, G, B data voltage, and the emission control signal are supplied at 0V. 제1항에 있어서, 상기 제1-8트랜지스터를 완전히 온시키고, 유기발광다이오드가 1500nit 밝기의 빛을 발하도록 화소전원 및 데이터전압을 공급하여 상기 유기발광다이오드 루미넌스 에이징이 수행되도록 구성된 것을 특징으로 하는 유기발광다이오드 패널의 에이징 회로.The organic light emitting diode luminance aging is performed by completely turning on the first through eighth transistors and supplying a pixel power supply and a data voltage so that the organic light emitting diode emits light having a brightness of 1500 nits. Aging circuit of organic light emitting diode panel.
KR1020060061405A 2006-06-30 2006-06-30 Aging circuit for oled panel KR101243159B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020060061405A KR101243159B1 (en) 2006-06-30 2006-06-30 Aging circuit for oled panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060061405A KR101243159B1 (en) 2006-06-30 2006-06-30 Aging circuit for oled panel

Publications (2)

Publication Number Publication Date
KR20080002525A true KR20080002525A (en) 2008-01-04
KR101243159B1 KR101243159B1 (en) 2013-03-14

Family

ID=39214304

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060061405A KR101243159B1 (en) 2006-06-30 2006-06-30 Aging circuit for oled panel

Country Status (1)

Country Link
KR (1) KR101243159B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100046438A (en) * 2008-10-27 2010-05-07 엘지디스플레이 주식회사 Organic light emitting display and monitoring method of the same
KR101451584B1 (en) * 2008-10-29 2014-10-17 엘지디스플레이 주식회사 Organic light emitting diode display
KR20160082877A (en) * 2014-12-29 2016-07-11 엘지디스플레이 주식회사 Organic Light Emitting Display And Luminance Control Method Of The Same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010069763A (en) * 2001-05-09 2001-07-25 이재학 Ca, VITAMIN, SOJU

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3899886B2 (en) * 2001-10-10 2007-03-28 株式会社日立製作所 Image display device
KR100562664B1 (en) * 2004-05-06 2006-03-20 삼성에스디아이 주식회사 Organic electro luminescent display and method for driving the same
KR100646999B1 (en) * 2004-06-25 2006-11-23 삼성에스디아이 주식회사 Light emitting display and driving methood thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100046438A (en) * 2008-10-27 2010-05-07 엘지디스플레이 주식회사 Organic light emitting display and monitoring method of the same
KR101451584B1 (en) * 2008-10-29 2014-10-17 엘지디스플레이 주식회사 Organic light emitting diode display
KR20160082877A (en) * 2014-12-29 2016-07-11 엘지디스플레이 주식회사 Organic Light Emitting Display And Luminance Control Method Of The Same

Also Published As

Publication number Publication date
KR101243159B1 (en) 2013-03-14

Similar Documents

Publication Publication Date Title
CN204680360U (en) A kind of image element circuit and display device
CN110689833B (en) display device
US20160189606A1 (en) Pixel circuit, driving method, display panel and display device
WO2019041818A1 (en) Pixel circuit and driving method thereof, display substrate and driving method thereof, and display apparatus
TWI410929B (en) Pixel circuit relating to organic light emitting diode and display using the same and driving method thereof
WO2017031909A1 (en) Pixel circuit and drive method thereof, array substrate, display panel, and display apparatus
CN106935190A (en) A kind of organic electroluminescence display panel, organic light-emitting display device, the driving method of organic electroluminescence display panel
JP2012242838A (en) Pixel unit circuit and oled display apparatus
US8743027B2 (en) OLED driving circuit and method of the same used in display panel
KR101868715B1 (en) Drive circuit and drive method for active-matrix organic light-emitting diode panel
WO2016165529A1 (en) Pixel circuit and driving method therefor, and display device
WO2016023311A1 (en) Pixel drive circuit, pixel drive method and display apparatus
KR101054327B1 (en) Current driven active matrix organic electroluminescent display device with pixel structure for improving image quality
US20150379928A1 (en) Pixel unit, pixel circuit and driving method thereof
US11676540B2 (en) Pixel circuit, method for driving the same, display panel and display device
US20160379561A1 (en) Control circuit and control method of amoled partition drive
JP2015034861A (en) Display device, driving method of display device, and electronic apparatus
JP2000259098A (en) Active el display device
CN105139805A (en) Pixel driving circuit, driving method thereof and display device
TW571281B (en) Driving circuit and method for a display device and display device therewith
CN113658555A (en) Pixel driving circuit, driving method and display panel
US8736519B2 (en) Pixel driving circuit with ground terminal voltage controller for an electro-luminance display device
CN102881253B (en) A kind of image element circuit and thin film transistor backplane
KR101243159B1 (en) Aging circuit for oled panel
TWI410928B (en) Pixel structure, display panel and driving method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20160226

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20180213

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20200219

Year of fee payment: 8