KR20070052943A - 포토레지스트 제거용 씬너 조성물 - Google Patents

포토레지스트 제거용 씬너 조성물 Download PDF

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Publication number
KR20070052943A
KR20070052943A KR1020050110764A KR20050110764A KR20070052943A KR 20070052943 A KR20070052943 A KR 20070052943A KR 1020050110764 A KR1020050110764 A KR 1020050110764A KR 20050110764 A KR20050110764 A KR 20050110764A KR 20070052943 A KR20070052943 A KR 20070052943A
Authority
KR
South Korea
Prior art keywords
thinner
weight
thinner composition
photoresist
parts
Prior art date
Application number
KR1020050110764A
Other languages
English (en)
Korean (ko)
Inventor
박희진
신성건
윤석일
김병욱
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to KR1020050110764A priority Critical patent/KR20070052943A/ko
Priority to PCT/KR2006/004638 priority patent/WO2007058443A1/en
Priority to CNA2006800410620A priority patent/CN101300529A/zh
Priority to TW095141773A priority patent/TW200728939A/zh
Publication of KR20070052943A publication Critical patent/KR20070052943A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
KR1020050110764A 2005-11-18 2005-11-18 포토레지스트 제거용 씬너 조성물 KR20070052943A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050110764A KR20070052943A (ko) 2005-11-18 2005-11-18 포토레지스트 제거용 씬너 조성물
PCT/KR2006/004638 WO2007058443A1 (en) 2005-11-18 2006-11-07 Thinner composition for removing photoresist
CNA2006800410620A CN101300529A (zh) 2005-11-18 2006-11-07 用于去除光刻胶的稀释剂组合物
TW095141773A TW200728939A (en) 2005-11-18 2006-11-10 Thinner composition for removing photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050110764A KR20070052943A (ko) 2005-11-18 2005-11-18 포토레지스트 제거용 씬너 조성물

Publications (1)

Publication Number Publication Date
KR20070052943A true KR20070052943A (ko) 2007-05-23

Family

ID=38048803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050110764A KR20070052943A (ko) 2005-11-18 2005-11-18 포토레지스트 제거용 씬너 조성물

Country Status (4)

Country Link
KR (1) KR20070052943A (zh)
CN (1) CN101300529A (zh)
TW (1) TW200728939A (zh)
WO (1) WO2007058443A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014123318A1 (ko) * 2013-02-08 2014-08-14 주식회사 동진쎄미켐 신너 조성물 및 이의 용도
KR20150088350A (ko) * 2014-01-23 2015-08-03 동우 화인켐 주식회사 레지스트 도포성 개선용 및 제거용 신너 조성물

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI467349B (zh) * 2008-11-19 2015-01-01 Toagosei Co Ltd 具有經圖案化的導電性高分子膜之基板的製造方法及具有經圖案化的導電性高分子膜之基板
US20120108067A1 (en) * 2010-10-29 2012-05-03 Neisser Mark O Edge Bead Remover For Coatings
CN103050394B (zh) * 2011-10-13 2015-10-14 上海华虹宏力半导体制造有限公司 超厚光刻胶的刻蚀方法
JP6899220B2 (ja) * 2017-01-11 2021-07-07 株式会社ダイセル レジスト除去用組成物
WO2022032478A1 (en) * 2020-08-11 2022-02-17 Showa Denko K.K. Solvent composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721638B2 (ja) * 1986-07-18 1995-03-08 東京応化工業株式会社 基板の処理方法
JP2001188358A (ja) * 1999-12-28 2001-07-10 Mitsubishi Gas Chem Co Inc エッジビードリムーバ
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US20050032657A1 (en) * 2003-08-06 2005-02-10 Kane Sean Michael Stripping and cleaning compositions for microelectronics
KR101213144B1 (ko) * 2003-10-20 2012-12-17 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014123318A1 (ko) * 2013-02-08 2014-08-14 주식회사 동진쎄미켐 신너 조성물 및 이의 용도
KR20150088350A (ko) * 2014-01-23 2015-08-03 동우 화인켐 주식회사 레지스트 도포성 개선용 및 제거용 신너 조성물

Also Published As

Publication number Publication date
TW200728939A (en) 2007-08-01
CN101300529A (zh) 2008-11-05
WO2007058443A1 (en) 2007-05-24

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