KR20060073078A - 비휘발성 유기 메모리 소자의 제조 방법 및 그에 의해수득된 비휘발성 유기 메모리 소자 - Google Patents
비휘발성 유기 메모리 소자의 제조 방법 및 그에 의해수득된 비휘발성 유기 메모리 소자 Download PDFInfo
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- KR20060073078A KR20060073078A KR1020040111926A KR20040111926A KR20060073078A KR 20060073078 A KR20060073078 A KR 20060073078A KR 1020040111926 A KR1020040111926 A KR 1020040111926A KR 20040111926 A KR20040111926 A KR 20040111926A KR 20060073078 A KR20060073078 A KR 20060073078A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
Description
Claims (19)
- 상부 전극과 하부 전극 사이에 메모리층을 포함하는 유기 메모리를 제조함에 있어서, 두 전극 사이의 유기물에 전도성 입자를 이온 상태로 분산시킨 후 이를 유기물 내에서 환원시켜 전도성 나노 입자를 형성함으로써 메모리층을 형성하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 방법이하부 전극이 형성된 기판 위에 유기물층을 형성하는 단계;유기물층이 형성된 기판을 전도성 입자의 이온 용액에 침지시키는 단계;전단계에서 수득한 기판을 환원제로 처리하는 단계를 포함하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 전도성 입자가 금속, 금속 산화물, 반도체, 전도성 고분자, 유기 도전체(organic conductor)로 구성되는 그룹으로부터 선택되는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 2항에 있어서, 상기 전도성 입자의 이온 용액이 HAuCl4, LiAuCl4, AuCl3, Au(PMe3)Me, H2PtCl6, Pt(Cp)Me3, PbCl2, ZnCl 2, Cu(OAc)2, Cu(ClO4)2, Na2PdCl4, Pd(Cp)PA, Pd(OAc)2, Rh(OAc)2, CoCl2, Co2(CO)8, NiCl2, AgOAc, AgClO4, AgNO3, Cd(ClO4)2, CdMe2, Pb(ClO4)2, PbEt4 , PbCl2, ZnEt2, Cu(OAc)2, CoCl2, FeCl2, FeCl2/FeCl3 로 구성되는 그룹으로부터 선택되는 1종을 극성 용매에 용해시킨 것임을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 유기물이 전도성 입자 이온과 특이적으로 상호작용할 수 있는 고분자인 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 5항에 있어서, 상기 고분자가 폴리(n-비닐피리딘), 폴리(디메틸실록산), 폴리(에틸렌-옥사이드), 폴리(아크릴산), 폴리(메틸아크릴산), 폴리(스티렌-술폰산), 폴리(시클로펜타디에닐메틸-노르보넨), 폴리(아미노애시드)로 구성되는 그룹으로부터 선택되는 재료로 이루어는 단일 혹은 공중합체로서 형성되는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 유기물이 아민기를 포함하는 고분자인 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 7항에 있어서, 상기 아민기를 갖는 고분자가 비닐피리딘기를 갖는 단일 또는 공중합 고분자인 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 8항에 있어서, 상기 공중합 고분자는 랜덤 혹은 블록 공중합체임을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 2항에 있어서, 상기 환원제가 NaBH4, LiBH4, LiAlH4, LiBEt3H, 알킬실란, 래니 니켈(Raney Ni), Pd+H2, FeCl3, H2S, 히드라진, SnCl2와 HCl의 혼합물로 구성되는 그룹으로부터 선택되는 것임을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 2항에 있어서, 상기 유기물층 형성 단계가 유기물층을 단층 또는 다층으로 구성하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 메모리층의 두께를 약 50 내지 3000 Å으로 조절하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 전극은 금속, 금속 산화물, 전도성 폴리머, 및 유기 도전체(organic conductor)로 구성되는 그룹으로부터 선택되는 것임을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 13항에 있어서, 상기 전극은 금, 은, 철, 백금, 알루미늄, 인듐틴옥사이드나트륨, 칼륨, 아연, 마그네슘으로 구성되는 그룹으로부터 선택되는 것임을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항에 있어서, 상기 방법이 하부 전극 위에 배리어 층을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 15항에 있어서, 상기 배리어층이 SiOx, AlOx, NbOx, TiOx, CrOx, VOx, TaOx, CuOx, MgOx, WOx, AlNOx로 구성되는 그룹으로부터 선택되는 무기 재료 또는 Alq3, 폴리메틸메타크릴레이트, 폴리스티렌, PET로 구성되는 그룹으로부터 선택되는 유기 재료를 포함하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 16항에 있어서, 상기 배리어층이 SiO2, Al2O3, Cu2O, TiO 2, BN, V2O3로 구성되는 그룹으로부터 선택되는 물질을 포함하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 15항에 있어서, 상기 배리어층의 두께를 약 20 내지 300 Å로 조절하는 것을 특징으로 하는 비휘발성 유기 메모리 소자의 제조방법.
- 제 1항 또는 제 2항의 방법에 의해 제조된 비휘발성 유기 메모리 소자.
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KR101420720B1 (ko) * | 2011-08-26 | 2014-07-28 | 한남대학교 산학협력단 | 전도성 고분자를 포함하는 비휘발성 메모리 소자 및 그 제조 방법 |
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