KR20060054501A - 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 - Google Patents
유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 Download PDFInfo
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- KR20060054501A KR20060054501A KR1020040093561A KR20040093561A KR20060054501A KR 20060054501 A KR20060054501 A KR 20060054501A KR 1020040093561 A KR1020040093561 A KR 1020040093561A KR 20040093561 A KR20040093561 A KR 20040093561A KR 20060054501 A KR20060054501 A KR 20060054501A
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- organic semiconductor
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- thin film
- insulating layer
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- 125000003184 C60 fullerene group Chemical group 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
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- BYBCMKKXISPQGR-UHFFFAOYSA-N pyrrole-2,5-dione;styrene Chemical compound O=C1NC(=O)C=C1.C=CC1=CC=CC=C1 BYBCMKKXISPQGR-UHFFFAOYSA-N 0.000 description 1
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- ICXIIYPWKGGWDB-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound C(CCCCCCCCCCCCCCCCC)[Si](Cl)(Cl)Cl.C(CCCCCCCCCCCCCCCCC)[Si](Cl)(Cl)Cl ICXIIYPWKGGWDB-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
- 절연 기판;상기 절연 기판 위에 형성되어 있으며, 게이트 전극을 가지는 게이트선;상기 게이트선을 덮으며, 유기 절연 물질로 이루어진 게이트 절연층;상기 게이트 절연층 상부에 ITO막으로 형성되어 있으며, 상기 게이트선과 교차하는 데이터선 및 상기 게이트 전극을 중심으로 상기 데이터선과 마주하는 드레인 전극;상기 데이터선의 일부인 소스 전극과 상기 드레인 전극 상부의 상기 게이트 절연층을 덮는 유기 반도체;상기 유기 반도체 상부에 형성되어 있는 보호막;상기 드레인 전극과 연결되어 있는 화소 전극을 포함하는 유기 반도체 박막 트랜지스터 표시판.
- 제1항에서,상기 ITO막은 준 결정 상태인 유기 반도체 박막 트랜지스터 표시판.
- 제2항에서,상기 ITO막은 상기 게이트 절연층과 접하는 접촉 계면서부터 상부 표면까지 균일하게 준 결정 상태인 유기 반도체 박막 트랜지스터 표시판.
- 제1항에서,상기 ITO막은 측벽이 테이퍼 구조로 이루어진 유기 반도체 박막 트랜지스터 표시판.
- 절연 기판 위에 게이트선을 형성하는 단계;상기 게이트선을 덮는 게이트 절연층을 형성하는 단계;상기 게이트 절연층 위에 20-35℃ 상온 범위에서 ITO막을 적층하고 패터닝하여 소스 전극을 가지는 데이터선 및 드레인 전극을 형성하는 단계;유기 반도체층을 형성한 다음 패터닝하여 유기 반도체를 형성하는 단계;상기 유기 반도체, 상기 데이터선 및 상기 드레인 전극 위에 보호막을 형성하는 단계;상기 드레인 전극과 연결되는 화소 전극을 형성하는 단계를 포함하는 유기 반도체 박막 트랜지스터 표시판의 제조 방법.
- 제5항에서,상기 게이트 절연막은 유기 절연 물질로 형성하는 박막 트랜지스터 표시판의 제조 방법.
- 제5항에서,상기 ITO막을 패터닝한 다음, 상기 ITO막을 어닐링하는 단계를 더 포함하는 박막 트랜지스터 표시판의 제조 방법.
- 제7항에서,상기 어닐링 공정은 180℃ 이상의 온도 범위에서 실시하는 박막 트랜지스터 표시판의 제조 방법.
- 제8항에서,상기 데이터선 및 상기 드레인 전극 형성 단계에서 상기 ITO은 크롬 식각액으로 습식 식각하는 박막 트랜지스터 표시판의 제조 방법.
- 제9항에서,상기 크롬 식각액은 (HNO3/(NH4)2Ce(NO3)6/H2 O)인 박막 트랜지스터 표시판의 제조 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020040093561A KR101112541B1 (ko) | 2004-11-16 | 2004-11-16 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
US11/236,111 US20060102954A1 (en) | 2004-11-16 | 2005-09-26 | Organic thin film transistor array panel and manufacturing method thereof |
TW094133438A TWI392095B (zh) | 2004-11-16 | 2005-09-27 | 有機薄膜電晶體陣列面板及其製造方法 |
JP2005332181A JP2006148114A (ja) | 2004-11-16 | 2005-11-16 | 半導体を利用した薄膜トランジスタ表示板及びその製造方法 |
CN2005101247360A CN1790681B (zh) | 2004-11-16 | 2005-11-16 | 有机薄膜晶体管阵列面板及其制造方法 |
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KR1020040093561A KR101112541B1 (ko) | 2004-11-16 | 2004-11-16 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
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KR20060054501A true KR20060054501A (ko) | 2006-05-22 |
KR101112541B1 KR101112541B1 (ko) | 2012-03-13 |
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US (1) | US20060102954A1 (ko) |
JP (1) | JP2006148114A (ko) |
KR (1) | KR101112541B1 (ko) |
CN (1) | CN1790681B (ko) |
TW (1) | TWI392095B (ko) |
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KR20060064264A (ko) * | 2004-12-08 | 2006-06-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101767864B1 (ko) * | 2008-09-12 | 2017-08-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 생산 방법 |
US9634029B2 (en) * | 2011-03-17 | 2017-04-25 | E Ink Holdings Inc. | Thin film transistor substrate and display device having same |
JP5870502B2 (ja) * | 2011-03-31 | 2016-03-01 | 大日本印刷株式会社 | 有機半導体素子およびその製造方法 |
JP6855848B2 (ja) * | 2016-03-18 | 2021-04-07 | 株式会社リコー | 電界効果型トランジスタの製造方法、揮発性半導体メモリ素子の製造方法、不揮発性半導体メモリ素子の製造方法、表示素子の製造方法、画像表示装置の製造方法、システムの製造方法 |
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JPH06204247A (ja) * | 1992-06-01 | 1994-07-22 | Toshiba Corp | 薄膜トランジスタの製造方法 |
JP3521600B2 (ja) * | 1996-02-21 | 2004-04-19 | 旭硝子株式会社 | 透明導電膜のパターニング方法と透明電極付き基体 |
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WO2002084756A1 (en) * | 2001-04-10 | 2002-10-24 | Sarnoff Corporation | Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors |
JP2003016858A (ja) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | インジウムスズ酸化膜の製造方法 |
JP4472216B2 (ja) * | 2001-08-01 | 2010-06-02 | Nec液晶テクノロジー株式会社 | アクティブマトリクス基板の製造方法 |
KR100617029B1 (ko) * | 2001-12-29 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 제조방법 |
TW538541B (en) * | 2002-05-15 | 2003-06-21 | Au Optronics Corp | Active matrix substrate of liquid crystal display device and the manufacturing method thereof |
KR20030094452A (ko) * | 2002-06-04 | 2003-12-12 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 어레이 기판 |
KR100524552B1 (ko) * | 2002-09-28 | 2005-10-28 | 삼성전자주식회사 | 유기 게이트 절연막 및 이를 이용한 유기박막 트랜지스터 |
US7265377B2 (en) * | 2003-04-01 | 2007-09-04 | Canon Kabushiki Kaisha | Organic semiconductor device |
KR100592503B1 (ko) * | 2004-02-10 | 2006-06-23 | 진 장 | 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법 |
-
2004
- 2004-11-16 KR KR1020040093561A patent/KR101112541B1/ko active IP Right Grant
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2005
- 2005-09-26 US US11/236,111 patent/US20060102954A1/en not_active Abandoned
- 2005-09-27 TW TW094133438A patent/TWI392095B/zh not_active IP Right Cessation
- 2005-11-16 CN CN2005101247360A patent/CN1790681B/zh not_active Expired - Fee Related
- 2005-11-16 JP JP2005332181A patent/JP2006148114A/ja active Pending
Also Published As
Publication number | Publication date |
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KR101112541B1 (ko) | 2012-03-13 |
TW200618312A (en) | 2006-06-01 |
CN1790681B (zh) | 2011-02-09 |
TWI392095B (zh) | 2013-04-01 |
JP2006148114A (ja) | 2006-06-08 |
CN1790681A (zh) | 2006-06-21 |
US20060102954A1 (en) | 2006-05-18 |
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