KR20050015757A - Method of manufacturing Hf films with improved uniformity in metal organic chemical vapor deposition - Google Patents

Method of manufacturing Hf films with improved uniformity in metal organic chemical vapor deposition

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KR20050015757A
KR20050015757A KR1020030054708A KR20030054708A KR20050015757A KR 20050015757 A KR20050015757 A KR 20050015757A KR 1020030054708 A KR1020030054708 A KR 1020030054708A KR 20030054708 A KR20030054708 A KR 20030054708A KR 20050015757 A KR20050015757 A KR 20050015757A
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vapor deposition
chemical vapor
metal organic
organic chemical
hafnium
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KR101021875B1 (en
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김근호
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주성엔지니어링(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A metal organic chemical vapor deposition method of manufacturing a hafnium film is provided to improve uniformity and reproducibility of the hafnium film by controlling evaporation temperature of LDS according to boiling point of source material. CONSTITUTION: A metal organic chemical vapor deposition method of manufacturing a hafnium film includes a process for forming a hafnium layer on a substrate loaded in an inside of a chamber by using a source material having a flow rate controlled by LDS. The source material is formed with tetrakis1-methoxy-2-methyl-2-propoxyhafnium. An inert gas or N2 is added to the source material.

Description

개선된 균일도를 가지는 하프늄막의 금속유기화학적 증착방법{Method of manufacturing Hf films with improved uniformity in metal organic chemical vapor deposition} Method of manufacturing Hf films with improved uniformity in metal organic chemical vapor deposition}

본 발명은 하프늄막의 금속유기화학적 증착방법(metal organic chemical vapor deposition)에 관한 것으로서, 더욱 상세하게는 개선된 박막균일도 및 두께재현성을 가지는 하프늄막의 금속유기화학적 증착 방법에 관한 것이다. The present invention relates to a metal organic chemical vapor deposition method of hafnium film, and more particularly to a metal organic chemical vapor deposition method of hafnium film having improved thin film uniformity and thickness reproducibility.

반도체장치를 제조하기 위해서는 반도체 기판에 대하여 막 형성처리 또는 패턴 에칭 처리가 반복 실시된다. 반도체 장치가 고밀도화 및 고집적화됨에 따라 막 형성처리 요건이 보다 엄격해지고 있는데, 커패시터의 절연막 또는 게이트 절연막과 같이 대단히 얇은 산화막 등에 대하여도 배가된 박막화 및 높은 절연성이 요구되는 것이 그 일례이다.In order to manufacture a semiconductor device, a film forming process or a pattern etching process is repeatedly performed on a semiconductor substrate. As semiconductor devices become denser and higher in density, film forming processing requirements become more stringent. For example, doubled thinning and high insulating properties are required even for very thin oxide films such as an insulating film or a gate insulating film of a capacitor.

종래부터 실리콘 산화막 또는 실리콘 질화막 등이 절연막으로 이용되고 있으며, 최근에 보다 절연 특성이 양호한 재료로서 탄탈산화(Ta2O5)막 또는 산화하프늄(HfO2) 혹은 산화질화하프늄(HfNxOy)막과 같은 금속재료막이 사용되고 있는데, 이러한 금속재료막은 금속유기화학적 증착방법에 의해 유기금속화합물을 가스화 하여 사용함으로서 막을 형성시킨다.Conventionally, a silicon oxide film or a silicon nitride film has been used as an insulating film. Recently, as a material having better insulating properties, a tantalum oxide (Ta 2 O 5 ) film or hafnium oxide (HfO 2 ) or hafnium oxynitride (HfN x O y ) A metal material film such as a film is used. The metal material film is formed by gasifying an organometallic compound by a metal organic chemical vapor deposition method.

그 중에서 현재 금속유기화학적 증착방법에 의하여 산화하프늄막을 형성하는 공정은 다음과 같다.Among them, a process of forming a hafnium oxide film by a metal organic chemical vapor deposition method is as follows.

먼저, 소스물질인 유기금속화합물로 Hf(N(C2H5)CH3)4(tetrakis ethyl methyl amino hafnium, 이하 'TEMAH'라 칭한다)를 LDS(liquid delivery system)로 유량을 조절하여 기화온도로 유지된 기화기에 의해 기화시켜 가스 상태로 만들어 진공분위기를 갖도록 설정된 처리실(챔버) 내부로 공급한다.First, Hf (N (C 2 H 5 ) CH 3 ) 4 (tetrakis ethyl methyl amino hafnium, hereinafter referred to as 'TEMAH') as an organometallic compound as a source material is controlled by the LDS (liquid delivery system) to control the flow rate. Vaporized by the vaporizer maintained in the gas state to make a gas state and supplied into the processing chamber (chamber) set to have a vacuum atmosphere.

한편, TEMAH를 산화시킬 산소 또는 오존과 같은 산화가스를 처리실 내부로 동시에 유입시키게 되면, TEMAH와 산화가스는 다음과 같이 반응하여 산화하프늄막이 처리실 내부에 안착된 기판 상에 형성된다.On the other hand, when an oxidizing gas such as oxygen or ozone to oxidize TEMAH is simultaneously introduced into the processing chamber, the TEMAH and the oxidizing gas react as follows to form a hafnium oxide film on the substrate seated inside the processing chamber.

Hf(N(C2H5)CH3)4 + O3 → HfO2 + 부산물(by-product)Hf (N (C 2 H 5 ) CH 3 ) 4 + O 3 → HfO 2 + by-product

또는,or,

Hf(N(C2H5)CH3)4 + O2 → HfO2 + 부산물(by-product)Hf (N (C 2 H 5 ) CH 3 ) 4 + O 2 → HfO 2 + by-product

그러나 현재 산화하프늄막 혹은 산화질화하프늄막을 형성하기 위해 사용되는 소스물질인 TEMAH는 그 끊는점이 98℃(0.5Torr)이며, 이는 기화기의 온도보다 매우 낮아 TEMAH의 기화에 따른 기체압력(vapor pressure)이 매우 높아지게 된다.However, TEMAH, the source material used to form the hafnium oxide film or hafnium oxynitride film, has a break point of 98 ° C (0.5 Torr). Very high.

이러한 높은 기체압력은 LDS로 유량조절을 하면서 기화시키는 방식의 금속유기화학적 증착방법에서는 막의 균일도(film uniformity) 뿐 아니라 두께 재현성 등을 제어하기 어려운 문제점을 야기하게 된다.This high gas pressure causes a problem in that it is difficult to control not only the film uniformity but also the thickness reproducibility in the metal organic chemical vapor deposition method by vaporizing the flow rate with LDS.

본 발명은 상기와 같은 문제점을 극복하기 위해 안출된 것으로서, 막 균일성 및 두께 재현성이 뛰어난 산화하프늄막 혹은 산화질화하프늄막과 같은 하프늄막을 형성시킬 수 있는 금속유기화학적 증착방법을 제공함을 그 목적으로 한다.The present invention has been made to overcome the above problems, and to provide a metal organic chemical vapor deposition method capable of forming a hafnium film such as a hafnium oxide film or a hafnium oxynitride film excellent in film uniformity and thickness reproducibility. do.

본 발명의 또 다른 목적은 금속유기화학적 증착방법에 있어서 산화하프늄막 혹은 산화질화하프늄막과 같은 하프늄막의 양산성을 제고시킴에 있다.Another object of the present invention is to improve the mass productivity of a hafnium film such as a hafnium oxide film or a hafnium oxynitride film in a metal organic chemical vapor deposition method.

본 발명은 상기와 같은 목적을 달성하기 위해서, LDS에 의해 유량 조절되는 소스물질을 이용하여 챔버 내부에 안착된 기판에 금속유기화학적 증착방법으로 산화하프늄막 혹은 산화질화하프늄막을 형성시키는 방법으로서, 상기 소스물질은 다음의 구조식으로 표현되는 테트라키스 1-메톡시-2-메틸-2-프로폭시 하프늄을 이용하는 산화하프늄막 혹은 산화질화하프늄막과 같은 하프늄막의 금속유기화학적 증착방법을 제공한다.In order to achieve the above object, the present invention provides a method for forming a hafnium oxide film or a hafnium oxynitride film by a metal organic chemical vapor deposition method on a substrate seated inside a chamber using a source material controlled by a flow rate controlled by LDS. The source material provides a metal organic chemical vapor deposition method of a hafnium film such as a hafnium oxide film or a hafnium oxynitride film using tetrakis 1-methoxy-2-methyl-2-propoxy hafnium represented by the following structural formula.

또한, 상기 소스물질에 산소나 질소나 불활성 기체를 포함하는 반응가스를 함께 사용할 수도 있는데, 상기 반응가스로는 오존, 산소, 질소, NH3, NO, N2O, Ar, He 중에서 선택되는 어느 하나 혹은 둘 이상을 동시에 사용하는 것을 특징으로 한다.In addition, a reaction gas containing oxygen, nitrogen, or an inert gas may be used as the source material. The reaction gas may be any one selected from ozone, oxygen, nitrogen, NH 3 , NO, N 2 O, Ar, and He. Or it is characterized by using two or more at the same time.

상기 소스물질인 Hf(MMP)4의 유량을 조절 제어하는 LDS의 기화온도는 150 내지 200℃ 범위 내에서 유지되는 것을 특징으로 한다.The vaporization temperature of the LDS to control the flow rate of the source material Hf (MMP) 4 is characterized in that it is maintained within the range of 150 to 200 ℃.

상기 산화하프늄막 혹은 산화질화하프늄막과 같은 하프늄막은 온도가 250 내지 550℃ 범위 내에서 형성되는 것을 특징으로 한다.The hafnium film, such as the hafnium oxide film or the hafnium oxynitride film, is characterized in that the temperature is formed within the range of 250 to 550 ℃.

상기 산화하프늄막 혹은 산화질화하프늄막과 같은 하프늄막은 압력이 0.01 내지 10Torr 범위 내에서 형성되는 것을 특징으로 한다.The hafnium film, such as the hafnium oxide film or the hafnium oxynitride film, is characterized in that the pressure is formed within the range of 0.01 to 10 Torr.

본 발명에 따른 바람직한 실시예를 상세하게 설명하면 다음과 같다.Referring to the preferred embodiment according to the present invention in detail as follows.

본 발명에 따른 금속유기화학적 증착방법으로 기판 상에 산화하프늄 혹은 산화질화하프늄막과 같은 하프늄막을 형성시키는 소스물질로서의 금속유기화합물은 하기 화학식1과 같은 Hf(MMP)4 (tetrakis 1-methoxy-2-methyl-2-propoxy hafnium, 이하에서는 Hf(MMP)4라 칭한다)이다.The metal organic compound as a source material for forming a hafnium film such as hafnium oxide or hafnium oxynitride film on a substrate by the metal organic chemical vapor deposition method according to the present invention is Hf (MMP) 4 (tetrakis 1-methoxy-2) -methyl-2-propoxy hafnium, hereinafter referred to as Hf (MMP) 4 ).

화학식 1Formula 1

상기 소스물질인 Hf(MMP)4 무색의 액체로서 분자량이 534.95g/㏖이며, 끊는점은 138℃(0.5Torr)로서 반응가스로서 산소 또는 오존과 반응하여 기판 상에 산화하프늄막을 형성시키는 반응식은 다음과 같다.Hf (MMP) 4 colorless liquid, the source material, has a molecular weight of 534.95 g / mol and a break point of 138 ° C. (0.5 Torr), where a hafnium oxide film is formed on a substrate by reacting with oxygen or ozone as a reaction gas. As follows.

반응가스로서 산소 가스가 사용되는 경우는When oxygen gas is used as reaction gas

Hf(MMP)4 + O2 → HfO2 + by-product 이며,Hf (MMP) 4 + O 2 → HfO 2 + by-product,

반응가스로서 오존이 사용되는 경우는If ozone is used as the reaction gas

Hf(MMP)4 + O3 → HfO2 + by-product 이다.Hf (MMP) 4 + O 3 → HfO 2 + by-product.

한편, 기판 상에 증착되는 산화하프늄막의 증착속도를 조절하기 위해서는 상기와 같이 산소 가스 또는 오존가스를 단독으로 사용하는 것보다 반응가스를 희석시킬 수 있는 불활성기체 중에서 선택되어지는 적어도 어느 하나의 조합을 동시에 사용하는 것이 바람직하다. 본 발명에서 사용될 수 있는 불활성 가스는 통상적으로 사용되는 He, Ar 또는 질소 가스(N2) 중에서 선택될 수 있다. 산소 가스 또는 오존과 같은 반응가스 또는 본 발명에서 사용된 상기 소스물질을 챔버 내부로 주입하게 되면 반응가스 또는 소스물질의 기상반응에 의하여 형성된 막질이 저하되거나 파티클(particle)이 발생함으로써 챔버 내부를 오염시킬 수 있다. 따라서, 상기에서 선택된 He, Ar 또는 질소 가스와 같은 불활성 가스를 동시에 주입하게 되면, 반응가스 또는 소스가스를 희석(dilution) 시키게 되어 반응가스 또는 소스가스의 기상반응을 억제할 수 있다.In order to control the deposition rate of the hafnium oxide film deposited on the substrate, at least one combination selected from inert gases capable of diluting the reaction gas, rather than using oxygen gas or ozone gas alone, may be used. It is preferable to use simultaneously. The inert gas that can be used in the present invention may be selected from He, Ar or nitrogen gas (N 2) which are commonly used. When the reaction gas such as oxygen gas or ozone or the source material used in the present invention is injected into the chamber, the film quality formed by the gaseous reaction of the reaction gas or the source material is degraded or particles are generated to contaminate the inside of the chamber. You can. Therefore, when the inert gas such as He, Ar, or nitrogen gas selected above is injected at the same time, the reaction gas or the source gas can be diluted, thereby suppressing the gas phase reaction of the reaction gas or the source gas.

또한, 산화질화하프늄막을 형성하기 위해 공정과정에서 소스물질과의 반응에 N원자를 주입할 필요가 있는 경우에는, 상기 반응가스(산소 가스 또는 오존 가스)에 질소를 함유하는 가스 즉, N2, NH3, NO, N2O 중에서 선택되는 적어도 하나 또는 둘 이상을 동시에 함께 사용하는 것이 바람직하다. 물론, 산화질화하프늄막을 형성하고자 하는 경우에도 상기 산화하프늄막을 형성하는 과정에서와 같이 불활성 기체를 주입시킴으로써 반응가스의 기상반응을 억제하는 것이 바람직하다.In addition, when it is necessary to inject N atoms into the reaction with the source material during the process to form the hafnium oxynitride film, the reaction gas (oxygen gas or ozone gas) containing nitrogen, that is, N 2 , It is preferable to use together at least one or two or more selected from NH 3 , NO, N 2 O simultaneously. Of course, when the hafnium oxynitride film is to be formed, it is preferable to suppress the gas phase reaction of the reaction gas by injecting an inert gas as in the process of forming the hafnium oxide film.

특히, 산화질화하프늄막을 형성하기 위한 질소 소스로서 사용된 N2는 상기 산화하프늄막의 형성 과정에서는 불활성 기체로 사용되어 반응가스(산소 가스 또는 오존가스)를 희석시키는데 사용될 수 있다는 점에 주목하여야 할 것이다. 다시 말하면, 산화질화 하프늄막을 형성하는 과정에서 도입된 질소 가스(N2)는 질소 소스로서 사용되는 반응가스임에 비하여 산화 하프늄막을 형성하는 경우에는 반응가스의 기상반응을 억제하기 위한 용도로 사용될 수 있다.In particular, it should be noted that N 2 used as a nitrogen source for forming the hafnium oxynitride film can be used as an inert gas to dilute the reaction gas (oxygen gas or ozone gas) during the formation of the hafnium oxide film. . In other words, the nitrogen gas (N 2 ) introduced during the formation of the hafnium oxynitride film is a reaction gas used as a nitrogen source, and can be used for suppressing the gas phase reaction of the reaction gas when forming the hafnium oxide film. have.

한편, 상기 소스물질인 Hf(MMP)4 유량을 조절하며 처리실 내부로 유입시키는 LDS의 기화온도는 150 내지 200℃ 범위 내에서 형성시키는 것이 좋으나, Hf(MMP)4 끊는점이 138℃임을 감안한다면 180℃ 정도가 바람직하다.On the other hand, it is preferable to form the vaporization temperature of the LDS to adjust the flow rate of the source material Hf (MMP) 4 to enter the process chamber within 150 to 200 ℃, considering that the Hf (MMP) 4 break point is 138 ℃ 180 C degree is preferable.

한편, 상기 소스물질과 반응가스가 유입되어 화학 반응이 일어나는 처리실 내부의 온도 및 압력범위는 소스물질 및 반응가스의 유입량에 따라 다양하게 변동될 수 있겠지만, 본 발명에 따라 사용되어지는 소스물질인 Hf(MMP)4 특성과, 기판 상에 산화하프늄막 혹은 산화질화하프늄막이 증착되는 증착속도 등을 감안한다면 온도는 250 내지 550℃ 범위, 압력은 0.01 내지 10Torr 범위가 바람직하다.On the other hand, the temperature and pressure range inside the processing chamber where the source material and the reaction gas is introduced to the chemical reaction may vary depending on the inflow of the source material and the reaction gas, Hf ( Considering the characteristics of MMP) 4 and the deposition rate at which a hafnium oxide film or hafnium oxynitride film is deposited on a substrate, the temperature is preferably in the range of 250 to 550 ° C. and the pressure in the range of 0.01 to 10 Torr.

본 발명에 의한 소스물질은 끊는점이 종래 소스물질보다 높음에 따라 LDS의 기화온도를 적절하게 제어 관리해주기만 한다면 막의 균일도 및 두께 재현성에 있어 뛰어난 박막을 구현할 수 있게 해준다.As the source material according to the present invention has a break point higher than that of the conventional source material, it is possible to implement a thin film excellent in uniformity and thickness reproducibility of the film, provided that the vaporization temperature of the LDS is properly controlled and managed.

더욱이 본 발명에 의한 소스물질은 금속유기화학적 증착방법에 적합한 기체압력을 가짐으로서 종래의 장치에 의해서도 산화하프늄막 혹은 산화질화하프늄막의 양산을 가능하게 해주는 이점이 있다.Furthermore, the source material according to the present invention has a gas pressure suitable for the metalorganic chemical vapor deposition method, thereby allowing mass production of a hafnium oxide film or a hafnium oxynitride film by a conventional apparatus.

Claims (14)

LDS에 의해 유량 조절되는 소스물질을 이용하여 챔버 내부에 안착된 기판에 금속유기화학적 증착방법으로 산화 하프늄막을 형성시키는 방법으로서,A method of forming a hafnium oxide film by metal organic chemical vapor deposition on a substrate seated inside a chamber using a source material controlled by a flow rate controlled by LDS, 상기 소스물질은 하기 구조식으로 표현되는 테트라키스 1-메톡시-2-메틸-2-프로폭시 하프늄을 이용하는 산화 하프늄막의 금속유기화학적 증착방법.The source material is a metal organic chemical vapor deposition method of the hafnium oxide film using tetrakis 1-methoxy-2-methyl-2-propoxy hafnium represented by the following structural formula. 제1항에 있어서,The method of claim 1, 상기 소스물질에 불활성 가스나 N2를 함께 사용하는 것을 특징으로 하는 산화 하프늄막의 금속유기화학적 증착방법.The metal organic chemical vapor deposition method of the hafnium oxide film, characterized in that the inert gas or N 2 is used as the source material. 제1항 또는 제2항 중 어느 한 항에 있어서,The method according to claim 1 or 2, 산소원자를 포함하는 반응 가스를 더욱 사용하는 것을 특징으로 하는 산화하프늄막의 금속유기화학적 증착방법.A metal organic chemical vapor deposition method for a hafnium oxide film, further comprising using a reaction gas containing an oxygen atom. 제3항에 있어서,The method of claim 3, 상기 반응가스로는 오존(O3), 산소(O2), NO, N2O 중에서 선택되는 하나 이상인 것을 특징으로 하는 산화 하프늄막의 금속유기화학적 증착방법The reaction gas may be at least one selected from ozone (O 3 ), oxygen (O 2 ), NO, and N 2 O. 제1항에 있어서,The method of claim 1, 상기 소스물질인 Hf(MMP)4 유량을 조절 제어하는 LDS의 기화온도는 150 내지 200℃ 범위 내에서 유지되는 것을 특징으로 하는 산화 하프늄막의 금속유기화학적 증착방법.The vaporization temperature of the LDS for controlling and controlling the flow rate of the source material Hf (MMP) 4 is maintained within the range of 150 to 200 ℃ metal organic chemical vapor deposition method of hafnium oxide film. 제1항에 있어서,The method of claim 1, 상기 산화하프늄막은 온도가 250 내지 550℃ 범위 내에서 형성되는 것을 특징으로 하는 산화 하프늄막의 금속유기화학적 증착방법.The hafnium oxide film is a metal organic chemical vapor deposition method of the hafnium oxide film, characterized in that formed in the temperature range of 250 to 550 ℃. 제1항에 있어서,The method of claim 1, 상기 산화하프늄막은 압력이 0.01 내지 10Torr 범위 내에서 형성되는 것을 특징으로 하는 산화 하프늄막의 금속유기화학적 증착방법.The hafnium oxide film is a metal organic chemical vapor deposition method of the hafnium oxide film, characterized in that the pressure is formed in the range of 0.01 to 10 Torr. LDS에 의해 유량 조절되는 소스물질을 이용하여 챔버 내부에 안착된 기판에 금속유기화학적 증착방법으로 산화질화 하프늄막을 형성시키는 방법으로서,A method of forming a hafnium oxynitride film by a metal organic chemical vapor deposition method on a substrate seated inside a chamber using a source material controlled by the flow rate of LDS, 상기 소스물질은 다음의 구조식으로표현되는 테트라키스 1-메톡시-2-메틸-2-프로폭시 하프늄을 이용하는 산화질화 하프늄막의 금속유기화학적 증착방법.The source material is a metal organic chemical vapor deposition method of the oxynitride hafnium film using tetrakis 1-methoxy-2-methyl-2-propoxy hafnium represented by the following structural formula. 제8항에 있어서,The method of claim 8, 상기 소스물질에 불활성 가스를 함께 사용하는 것을 특징으로 하는 산화질화하프늄막의 금속유기화학적 증착방법.The metal organic chemical vapor deposition method of the hafnium oxynitride film | membrane characterized by using an inert gas for the said source material. 제8항 또는 제9항중 어느 한 항에 있어서,The method according to claim 8 or 9, 산소원자 혹은 질소원자를 포함하는 반응 가스를 더욱 사용하는 것을 특징으로 하는 산화질화 하프늄막의 금속유기화학적 증착방법.A metal organic chemical vapor deposition method for a hafnium oxynitride film further comprising using a reaction gas containing an oxygen atom or a nitrogen atom. 제10항에 있어서,The method of claim 10, 상기 반응가스로는 오존(O3), 산소(O2), 질소(N2), NO, N2O, NH3 중에서 선택되는 어느 하나 혹은 둘 이상을 동시에 사용하는 것을 특징으로 하는 산화질화 하프늄막의 금속유기화학적 증착방법As the reaction gas, any one or two or more selected from ozone (O 3 ), oxygen (O 2 ), nitrogen (N 2 ), NO, N 2 O, and NH 3 may be used at the same time. Metal Organic Chemical Vapor Deposition 제8항에 있어서,The method of claim 8, 상기 소스물질인Hf(MMP)4 유량을 조절 제어하는 LDS의 기화온도는 150 내지 200℃ 범위 내에서 유지되는 것을 특징으로 하는 산화질화 하프늄막의 금속유기화학적 증착방법.The vaporization temperature of the LDS for controlling and controlling the flow rate of the source material Hf (MMP) 4 is maintained in the range of 150 to 200 ℃ metal organic chemical vapor deposition method of hafnium oxynitride film. 제8항에 있어서,The method of claim 8, 상기 산화질화하프늄막은 온도가 250 내지 550℃ 범위 내에서 형성되는 것을 특징으로 하는 산화질화 하프늄막의 금속유기화학적 증착방법.The hafnium oxynitride film is a metal organic chemical vapor deposition method of the hafnium oxynitride film is characterized in that the temperature is formed in the range of 250 to 550 ℃. 제8항에 있어서,The method of claim 8, 상기 산화질화하프늄막은 압력이 0.01 내지 10Torr 범위 내에서 형성되는 것을 특징으로 하는 산화질화 하프늄막의 금속유기화학적 증착방법.The hafnium oxynitride film is a metal organic chemical vapor deposition method of the hafnium oxide hafnium oxide film, characterized in that the pressure is formed in the range of 0.01 to 10 Torr.
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