KR20040087888A - 절연막 형성용 코팅 조성물, 이를 이용한 저유전 절연막의제조방법 및 이로부터 제조되는 반도체 소자용 저유전절연막과 이를 포함하는 반도체 소자 - Google Patents
절연막 형성용 코팅 조성물, 이를 이용한 저유전 절연막의제조방법 및 이로부터 제조되는 반도체 소자용 저유전절연막과 이를 포함하는 반도체 소자 Download PDFInfo
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- KR20040087888A KR20040087888A KR1020040023320A KR20040023320A KR20040087888A KR 20040087888 A KR20040087888 A KR 20040087888A KR 1020040023320 A KR1020040023320 A KR 1020040023320A KR 20040023320 A KR20040023320 A KR 20040023320A KR 20040087888 A KR20040087888 A KR 20040087888A
- Authority
- KR
- South Korea
- Prior art keywords
- carbon atoms
- insulating film
- fluorine
- coating composition
- straight
- Prior art date
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Abstract
Description
중량평균분자량 | 물(g) | 기공형성물질 | 유전율 | 탄성률(GPa) | 경도(GPa) | |
실시예 1 | 2,500 | 1.0 | X | 2.98 | 16.2 | 2.45 |
실시예 2 | 2,500 | 1.0 | O | 2.26 | 5.6 | 0.72 |
비교예 1 | 2,500 | X | X | 3.16 | 14.6 | 2.10 |
비교예 2 | 2,500 | 0.05 | X | 3.14 | 14.4 | 2.09 |
비교예 3 | 3,300 | 0.5 | X | 3.10 | 12.8 | 1.83 |
비교예 4 | 2,500 | X | O | 2.33 | 4.9 | 0.60 |
비교예 5 | 890,000 | 1.0 | X | 2.21 | 4.4 | 0.6 |
비교예 6 | 890,000 | X | X | 2.20 | 4.31 | 0.59 |
비교예 7 | 890,000+ 1680 | 3.0 | X | 2.49 | 6.8 | 1.0 |
비교예 8 | 890,000+ 1680 | X | X | 2.48 | 6.7 | 1.0 |
비교예 9 | 890,000 | 1.0 | O | 2.33 | 4.8 | 0.56 |
Claims (18)
- a) 중량평균분자량이 500 내지 30,000인 유기폴리실록산 전중합체;b) 유기용매 및c) 물을 포함하는 절연막 형성용 코팅 조성물.
- 제1항에 있어서, 상기 조성물은a) 상기 유기폴리실록산 전중합체 100 중량부b) 상기 유기용매 200 내지 2000 중량부; 및c) 물 5 내지 60 중량부를를 포함하는 절연막 형성용 코팅 조성물.
- 제1항에 있어서, 상기 유기폴리실록산 전중합체는 유시폴리실록산 전중합체의 축합반응 가능한 관능기 전체에 대한 히드록시기의 몰비가 80% 이상인 절연막 형성용 코팅 조성물.
- 제1항에 있어서, 상기 유기폴리실록산 전중합체는 실리콘 원자에 대한 가수분해가능하지 않은 관능기의 비율(관능기/Si)의 비율이 0.35 내지 0.75인 절연막 형성용 코팅 조성물.
- 제1항에 있어서, 상기 유기용매는 비알코올계 에테르계 용매 또는 비알코올계 에스테르계 용매인 절연막 형성용 코팅 조성물.
- 제1항에 있어서, 상기 유기폴리실록산 전중합체는 분자 내에, 하기 화학식 1 내지 3으로 표시되는 실란화합물로 이루어진 군에서 선택되는 1종 이상의 실란화합물, 이로부터 제조되는 다이머 또는 올리고머가 가수분해 및 축합반응된 반복단위를 포함하는 것인 절연막 형성용 코팅 조성물.[화학식 1]상기 식에서,R1은 수소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R2는 직쇄 또는 분지소상의 탄소수 1 내지 4의 알콕시이고,p는 1 내지 2의 정수이며,[화학식 2]상기 식에서,R3, 및 R5는 각각 독립적으로 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R4, 및 R6는 각각 독립적으로 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알콕시이고,M은 탄소수 1 내지 6의 알킬렌 또는 페닐렌이고,q, 및 r은 각각 0 내지 2의 정수이며,[화학식 3]상기 식에서,R7은 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R8은 수소, 히드록시, 또는 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시, 또는 -(CH2)a-SiR9R10(여기서, a는 2 또는 3임.)이고,R9은 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 도는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R10은 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시이고,m, 및 n은 각각 3 내지 7의 정수이다.
- 제1항에 있어서, 상기 조성물은 d) 기공 형성 물질을 더 포함하는 것인 절연막 형성용 코팅 조성물.
- 제7항에 있어서, 상기 조성물은 상기 유기폴리실록산 전중합체 100 중량부에 대하여 d) 기공 형성 물질을 5 내지 100 중량부로 더 포함하는 것인 절연막 형성용 코팅 조성물.
- 제7항에 있어서, 상기 기공 형성 물질은 200 내지 450℃에서 열분해되는 선형 유기분자, 선형 유기고분자, 가교형(cross-linked)유기분자, 가교형 유기고분자, 하이퍼브렌치형(hyper-branched) 유기분자, 하이퍼브렌치형 고분자, 덴드리머형(dendrimer) 유기분자 및 덴드리머형 유기고분자로 이루어진 군에서 선택되는 1종 이상의 물질인 절연막 형성용 코팅 조성물.
- a) 중량평균분자량이 500 내지 30,000인 유기폴리실록산 전중합체를 제조하는 단계;b) i) 상기 제조된 유기폴리실록산 전중합체, ii) 유기용매 및 iii) 물을 혼합하여 절연막 형성용 코팅 조성물을 제조하는 단계;c) 상기 b)단계의 절연막 형성용 코팅 조성물을 반도체 소자의 기재에 도포하는 단계; 및d) 상기 c)단계의 도포된 절연막 형성용 코팅 조성물을 건조 및 소성하여 절연막을 형성시키는 단계를 포함하는 저유전 절연막의 제조방법.
- 제10항에 있어서, 상기 a) 단계의 유기폴리실록산 전중합체는i) 하기 화학식 1 내지 화학식 3으로 표시되는 실란화합물로 이루어진 군에서 선택되는 1종 이상의 실란화합물, 이로부터 제조되는 다이머 또는 올리고머;ii) 산 촉매; 및iii) 물 또는 물과 유기용매의 혼합물을 혼합하고 가수분해 및 축합반응시켜 준비하는 것인 저유전 절연막의 제조방법.[화학식 1]상기 식에서,R1은 수소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R2는 직쇄 또는 분지소상의 탄소수 1 내지 4의 알콕시이고,p는 1 내지 2의 정수이며,[화학식 2]상기 식에서,R3, 및 R5는 각각 독립적으로 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R4, 및 R6는 각각 독립적으로 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알콕시이고,M은 탄소수 1 내지 6의 알킬렌 또는 페닐렌이고,q, 및 r은 각각 0 내지 2의 정수이며,[화학식 3]상기 식에서,R7은 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R8은 수소, 히드록시, 또는 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시, 또는 -(CH2)a-SiR9R10(여기서, a는 2 또는 3임.)이고,R9은 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 도는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R10은 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시이고,m, 및 n은 각각 3 내지 7의 정수이다.
- 제10항에 있어서, 상기 a) 단계의 유기폴리실록산 전중합체는 분자 내에 하기 화학식 1 내지 3으로 표시되는 실란화합물로 이루어진 군에서 선택되는 1종 이상의 실란화합물, 이로부터 제조되는 다이머 또는 올리고머가 가수분해 및 축합반응된 반복단위를 포함하는 것인 저유전 절연막의 제조방법.[화학식 1]상기 식에서,R1은 수소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R2는 직쇄 또는 분지소상의 탄소수 1 내지 4의 알콕시이고,p는 1 내지 2의 정수이며,[화학식 2]상기 식에서,R3, 및 R5는 각각 독립적으로 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R4, 및 R6는 각각 독립적으로 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알콕시이고,M은 탄소수 1 내지 6의 알킬렌 또는 페닐렌이고,q, 및 r은 각각 0 내지 2의 정수이며,[화학식 3]상기 식에서,R7은 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R8은 수소, 히드록시, 또는 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시, 또는 -(CH2)a-SiR9R10(여기서, a는 2 또는 3임.)이고,R9은 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 도는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R10은 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시이고,m, 및 n은 각각 3 내지 7의 정수이다.
- 제10항에 있어서, 상기 b) 단계의 조성물은 전체 중량에 대하여 i) 유기폴리실록산 전중합체 100 중량부; ii) 유기용매 200 내지 2000 중량부 및 iii) 물 4 내지 60 중량부를 포함하는 것인 저유전 절연막의 제조방법.
- 제10항에 있어서, 상기 b) 단계의 조성물은 iv) 기공 형성 물질을 더 포함하는 것인 저유전 절연막의 제조방법.
- 제14항에 있어서, 상기 조성물은 상기 유기폴리실록산 전중합체 100 중량부에 대하여 d) 기공 형성 물질을 5 내지 100 중량부로 더 포함하는 것인 저유전 절연막의 제조방법.
- 제14항에 있어서, 상기 기공 형성 물질은 200 내지 450℃에서 열분해되는 선형 유기분자, 선형 유기고분자, 가교형(cross-linked)유기분자, 가교형 유기고분자, 하이퍼브렌치형(hyper-branched) 유기분자, 하이퍼브렌치형 고분자, 덴드리머형(dendrimer) 유기분자 및 덴드리머형 유기고분자로 이루어진 군에서 선택되는 1종 이상의 물질인 저유전 절연막의 제조방법.
- 제10항에 따른 방법으로 제조되고, 하기 화학식 1 내지 화학식 3으로 표시되는 실란화합물로 이루어진 군에서 선택되는 1종 이상의 실란화합물, 이로부터 제조되는 다이머 또는 올리고머가 가수분해 및 축합반응된 반복단위를 가지는 유기폴리실록산 중합체를 포함하는 반도체 소자용 저유전 절연막.[화학식 1]상기 식에서,R1은 수소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R2는 직쇄 또는 분지소상의 탄소수 1 내지 4의 알콕시이고,p는 1 내지 2의 정수이며,[화학식 2]상기 식에서,R3, 및 R5는 각각 독립적으로 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R4, 및 R6는 각각 독립적으로 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알콕시이고,M은 탄소수 1 내지 6의 알킬렌 또는 페닐렌이고,q, 및 r은 각각 0 내지 2의 정수이며,[화학식 3]상기 식에서,R7은 수소, 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 또는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R8은 수소, 히드록시, 또는 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시, 또는 -(CH2)a-SiR9R10(여기서, a는 2 또는 3)이고,R9은 불소, 아릴, 비닐, 알릴, 또는 불소로 치환되거나 치환되지 않은 직쇄 도는 분지쇄상의 탄소수 1 내지 4의 알킬이고,R10은 직쇄 또는 분지쇄 상의 탄소수 1 내지 4의 알콕시이고,m, 및 n은 각각 3 내지 7의 정수이다.
- 제17항의 반도체 소자용 저유전 절연막을 포함하는 반도체 소자.
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2004
- 2004-03-31 EP EP04724894.3A patent/EP1537183B1/en not_active Expired - Lifetime
- 2004-03-31 US US10/516,493 patent/US7345351B2/en not_active Expired - Lifetime
- 2004-03-31 JP JP2005518168A patent/JP4409515B2/ja not_active Expired - Lifetime
- 2004-03-31 CN CNB2004800003305A patent/CN100457844C/zh not_active Expired - Lifetime
- 2004-03-31 WO PCT/KR2004/000747 patent/WO2004090058A1/en active Application Filing
- 2004-04-06 KR KR1020040023320A patent/KR100579855B1/ko active IP Right Grant
- 2004-04-08 TW TW93109818A patent/TWI312801B/zh not_active IP Right Cessation
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2008
- 2008-01-25 US US12/010,541 patent/US7648894B2/en active Active
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KR101119141B1 (ko) * | 2005-01-20 | 2012-03-19 | 삼성코닝정밀소재 주식회사 | 폴리머 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
KR100775100B1 (ko) * | 2005-03-16 | 2007-11-08 | 주식회사 엘지화학 | 절연막 형성용 조성물, 이로부터 제조되는 절연막, 및 이를포함하는 전기 또는 전자 소자 |
KR100824037B1 (ko) * | 2005-03-16 | 2008-04-21 | 주식회사 엘지화학 | 절연막 형성용 기공형성제 조성물, 이를 포함하는 절연막형성용 조성물, 이를 이용한 절연막의 제조 방법, 및이로부터 제조되는 절연막 |
US7635524B2 (en) | 2005-03-16 | 2009-12-22 | Lg Chem, Ltd. | Coating composition for dielectric insulating film, dielectric insulating film prepared therefrom, and electric or electronic device comprising the same |
KR101139052B1 (ko) * | 2005-12-06 | 2012-04-30 | 삼성전자주식회사 | 불소를 포함하는 유기절연체 조성물 및 이를 이용한 유기박막 트랜지스터 |
Also Published As
Publication number | Publication date |
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WO2004090058A1 (en) | 2004-10-21 |
US7345351B2 (en) | 2008-03-18 |
CN1697865A (zh) | 2005-11-16 |
TW200506015A (en) | 2005-02-16 |
KR100579855B1 (ko) | 2006-05-12 |
JP4409515B2 (ja) | 2010-02-03 |
US7648894B2 (en) | 2010-01-19 |
JP2006516156A (ja) | 2006-06-22 |
EP1537183A1 (en) | 2005-06-08 |
US20080145677A1 (en) | 2008-06-19 |
EP1537183B1 (en) | 2014-05-14 |
TWI312801B (en) | 2009-08-01 |
CN100457844C (zh) | 2009-02-04 |
EP1537183A4 (en) | 2007-08-08 |
US20060045984A1 (en) | 2006-03-02 |
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