KR20020051489A - Shower head of Chemical Vapor Deposition equipment for improving a thickness uniformity - Google Patents
Shower head of Chemical Vapor Deposition equipment for improving a thickness uniformity Download PDFInfo
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- KR20020051489A KR20020051489A KR1020000080726A KR20000080726A KR20020051489A KR 20020051489 A KR20020051489 A KR 20020051489A KR 1020000080726 A KR1020000080726 A KR 1020000080726A KR 20000080726 A KR20000080726 A KR 20000080726A KR 20020051489 A KR20020051489 A KR 20020051489A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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Abstract
Description
본 발명은 반도체 소자의 제조장비에 관한 것으로, 더욱 상세하게는 화학기상증착(CVD: Chemical Vapor Deposition) 장비에 관한 것이다.The present invention relates to equipment for manufacturing semiconductor devices, and more particularly, to chemical vapor deposition (CVD) equipment.
화학기상증착법은 박막 증착 원료를 가스상태로 챔버(chamber)에 공급해서 기판 표면의 화학반응에 의해 반도체 기판 위에 원하는 박막을 퇴적하는 방법이다. 따라서, 같은 증착 원료로부터 조성이나 결정구조가 다른 재질을 갖는 박막을 얻을 수 있는 장점이 있는 특징이 있다. 이러한 화학기상증착법은 증착되는 박막의 두께 균일성을 확보하는 것이 대단히 중요하다.Chemical vapor deposition is a method of depositing a desired thin film on a semiconductor substrate by supplying a thin film deposition raw material to a chamber in a gaseous state and by chemical reaction of the surface of the substrate. Therefore, there is a merit that a thin film having a material having a different composition or crystal structure from the same deposition raw material can be obtained. In such a chemical vapor deposition method, it is very important to secure the thickness uniformity of the deposited thin film.
도 1은 종래기술에 의한 화학기상증착 장비의 샤워헤드를 도시한 개략적인 단면도이다.1 is a schematic cross-sectional view showing a showerhead of a chemical vapor deposition apparatus according to the prior art.
도 1을 참조하면, 일반적인 화학기상증착 장비는 히터(18) 위에 반도체 기판인 웨이퍼(16)를 올려놓고 증착 가스를 기체상태로 분사(20)하여 원하는 박막을 퇴적한다. 이때, 샤워헤드의 구성은, 샤워헤드 본체(10), 중앙부에 형성된 제1 가스분사구멍(14), 상기 제1 가스분사 구멍(14)과 연결된 제1 가스라인(12)으로 이루어진다.Referring to FIG. 1, a general chemical vapor deposition apparatus places a wafer 16, which is a semiconductor substrate, on a heater 18, and deposits a desired thin film by spraying deposition gas in a gaseous state. At this time, the configuration of the shower head comprises a shower head body 10, a first gas injection hole 14 formed in the center portion, the first gas line 12 connected to the first gas injection hole 14.
그러나 종래기술에 의한 화학기상증착 장비의 샤워헤드는 박막이 증착되는 웨이퍼(16)의 중앙부에서는 균일한 두께를 확보할 수 있으나, 가장자리에서는 박막이 퇴적되지 않는 문제점이 발생한다.However, the shower head of the conventional chemical vapor deposition apparatus can secure a uniform thickness in the center portion of the wafer 16 on which the thin film is deposited, but a problem arises in that the thin film is not deposited at the edge.
따라서, 균일한 박막 두께를 확보할 수 없기 때문에, 박막이 퇴적되는 동안에 웨이퍼의 가장자리는 위쪽으로 휨(warpage)이 발생하여 웨이퍼의 가장자리에 히터(18)가 직접 접촉되지 않는다. 이에 따라 히터(18)의 온도가 웨이퍼(16)의 가장자리에 직접적으로 영향을 주지 못하는 문제가 발생한다. 이러한 문제는 웨이퍼의구경이 큰 12인치 웨이퍼에서는 더욱 심하게 발생한다.Therefore, since a uniform thin film thickness cannot be ensured, the edge of the wafer is warped upward while the thin film is deposited so that the heater 18 does not directly contact the edge of the wafer. This causes a problem that the temperature of the heater 18 does not directly affect the edge of the wafer 16. This problem is more severe in 12-inch wafers with larger wafer diameters.
따라서, 화학기상증착 장비의 제조회사에서는 히터의 구조 및 재질을 개선하거나, 히터에 설치된 히팅코일(heating coil)을 개선하거나, 샤워헤드의 홈 크기 및 개수를 개선하여 상술한 두께 균일성 문제를 해결하기 위한 많은 노력이 이루어지고 있다.Therefore, manufacturers of chemical vapor deposition equipment solve the above-mentioned thickness uniformity problem by improving the structure and material of the heater, improving the heating coil installed in the heater, or improving the groove size and number of the shower head. Many efforts are being made to do this.
본 발명이 이루고자 하는 기술적 과제는 웨이퍼의 가장자리에서도 퇴적되는 박막의 두께 균일성을 확보할 수 있는 화학기상증착 장비의 샤워헤드를 제공하는데 있다.The technical problem to be achieved by the present invention is to provide a shower head of a chemical vapor deposition apparatus that can ensure the thickness uniformity of the thin film deposited on the edge of the wafer.
도 1은 종래 기술에 의한 화학기상증착 장비의 샤워헤드를 도시한 개략적인 단면도이다.1 is a schematic cross-sectional view showing a showerhead of a chemical vapor deposition apparatus according to the prior art.
도 2는 본 발명에 의한 화학기상증착 장비의 샤워헤드를 도시한 개략적인 단면도이다.Figure 2 is a schematic cross-sectional view showing a showerhead of the chemical vapor deposition apparatus according to the present invention.
도 3은 도 2의 배면도이다.3 is a rear view of FIG. 2.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
100: 샤워헤드 본체, 102: 제1 가스라인,100: the shower head body, 102: the first gas line,
104: 제2 가스라인, 106: 제1 가스분사 구멍,104: second gas line, 106: first gas injection hole,
108: 제2 가스분사 구멍, 110: 웨이퍼,108: second gas injection hole, 110: wafer,
112: 히터, 114: 가스흐름.112: heater, 114: gas flow.
상기 기술적 과제를 달성하기 위하여 본 발명은, 샤워헤드 본체, 상기 샤워헤드 본체와 연결되고 중앙부에 가스를 공급하는 제1 가스라인, 상기 샤워헤드 본체와 연결되고 가장자리에 가스를 공급하는 제2 가스공급라인, 상기 샤워헤드의 하단 중앙부에 형성되고 상기 제1 가스라인으로부터 가스를 공급받는 복수개의 제1 가스분사 구멍 및 상기 샤워헤드의 하단 가장자리에 형성되고 상기 제2 가스라인으로부터 가스를 공급받는 복수개의 제2 가스분사 구멍을 구비하는 것을 특징으로 하는 화학기상증착 장비의 샤워헤드(shower head)를 제공한다.In order to achieve the above technical problem, the present invention provides a showerhead body, a first gas line connected to the showerhead body and supplying gas to a central portion, and a second gas supply connected to the showerhead body and supplying gas to an edge thereof. And a plurality of first gas injection holes formed in a central portion of the lower end of the shower head and supplied with gas from the first gas line, and a plurality of first gas injection holes formed in the lower edge of the shower head and supplied with gas from the second gas line. A shower head of a chemical vapor deposition apparatus is provided, comprising a second gas injection hole.
본 발명의 바람직한 실시예에 의하면, 상기 제1 가스라인과 제2 가스라인에 공급되는 가스는 불활성가스 또는 공정가스로서 동일한 종류의 가스가 같은 양으로 공급되거나, 혹은 동일한 종류의 가스가 다른 양으로 공급될 수 있다.According to a preferred embodiment of the present invention, the gas supplied to the first gas line and the second gas line is an inert gas or a process gas, the same kind of gas is supplied in the same amount, or the same kind of gas in different amounts Can be supplied.
본 발명에 따르면, 웨이퍼의 가장자리에도 본 발명에 의한 제2 가스라인 및 제2 가스분사 구멍을 이용하여 가스를 흘려줌으로써, 웨이퍼 가장자리에 증착되는 박막의 두께 균일성(thickness uniformity)을 확보할 수 있다. 이로 인해 웨이퍼 휨(warpage)을 방지하고 히터의 온도가 웨이퍼 밑면에 균일하게 전달되도록 할 수 있다. 또한 제2 가스라인의 가스의 흐름을 제어하여 챔버 벽(wall)에 박막이 퇴적되는 문제를 억제할 수 있다.According to the present invention, the thickness of the thin film deposited on the edge of the wafer can be secured by flowing the gas to the edge of the wafer using the second gas line and the second gas injection hole according to the present invention. . This prevents wafer warpage and ensures that the temperature of the heater is evenly transmitted to the underside of the wafer. In addition, by controlling the flow of gas in the second gas line, the problem of thin film deposited on the chamber wall can be suppressed.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 의한 화학기상증착 장비의 샤워헤드를 도시한 개략적인 단면도이고, 도 3은 도 2의 배면도이다.Figure 2 is a schematic cross-sectional view showing a showerhead of the chemical vapor deposition apparatus according to the present invention, Figure 3 is a rear view of FIG.
도 2 및 도 3을 참조하면, 본 발명에 의한 화학기상증착 장비의 샤워헤드의 구성은, 샤워헤드 본체(100), 상기 샤워헤드 본체(100)에 연결된 제1 가스라인(102) 및 상기 제1 가스라인(102)에 연결되어 히터(112) 위에 있는 웨이퍼(110)의 중앙부에 가스를 분사하는 제1 가스분사 구멍(106)에, 추가로, 상기 제1 가스라인(102)과는 독립된 제2 가스라인(104) 및 상기 제2 가스라인(104)과 연결된 제2 가스분사 구멍(108)을 포함한다.2 and 3, the configuration of the showerhead of the chemical vapor deposition apparatus according to the present invention includes a showerhead body 100, a first gas line 102 connected to the showerhead body 100, and the first agent. In addition to the first gas line 102, the first gas injection hole 106 is connected to the first gas line 102 and injects gas into the center portion of the wafer 110 on the heater 112. And a second gas injection hole 108 connected to the second gas line 104 and the second gas line 104.
따라서, 상기 제2 가스라인(104) 및 제2 가스분사 구멍(108)을 통하여 공급되는 불활성가스(inert gas) 및 공정가스를 제어하여 웨이퍼 가장자리에도 박막이 균일하게 퇴적될 수 있도록 할 수 있으며, 챔버 벽(chamber wall)에 박막이 퇴적되는 문제를 억제할 수 있다. 이를 위해 상기 제2 가스라인(104)에는 상기 제1 가스라인(102)에 공급되는 가스와 동일한 종류 및 동일한 양의 가스를 공급할 수 있으며, 다른 방법으로 동일한 가스를 공급하되 공급되는 양을 조절할 수도 있다.Therefore, the inert gas and the process gas supplied through the second gas line 104 and the second gas injection hole 108 may be controlled to uniformly deposit thin films on the wafer edge. The problem that the thin film is deposited on the chamber wall can be suppressed. To this end, the second gas line 104 may be supplied with the same kind and the same amount of gas as the gas supplied to the first gas line 102. Alternatively, the second gas line 104 may be supplied with the same gas, but the amount supplied may be adjusted. have.
본 발명은 상기한 실시예에 한정되지 않으며, 본 발명이 속한 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 많은 변형이 가능함이 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications can be made by those skilled in the art within the technical spirit to which the present invention belongs.
따라서, 상술한 본 발명에 따르면, 첫째 웨이퍼 가장자리에서 휨(warpage)이 발생하는 문제를 방지하여 히터의 온도가 웨이퍼 배면에 균일하게 전달되도록 할 수 있다. 둘째, 웨이퍼에 퇴적되는 박막의 두께 균일성을 개선할 수 있다.Therefore, according to the present invention described above, first, the problem of warpage occurring at the edge of the wafer can be prevented so that the temperature of the heater can be uniformly transmitted to the back surface of the wafer. Second, it is possible to improve the thickness uniformity of the thin film deposited on the wafer.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000080726A KR100699815B1 (en) | 2000-12-22 | 2000-12-22 | Shower head of Chemical Vapor Deposition equipment for improving a thickness uniformity |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020000080726A KR100699815B1 (en) | 2000-12-22 | 2000-12-22 | Shower head of Chemical Vapor Deposition equipment for improving a thickness uniformity |
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| Publication Number | Publication Date |
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| KR20020051489A true KR20020051489A (en) | 2002-06-29 |
| KR100699815B1 KR100699815B1 (en) | 2007-03-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402332B1 (en) * | 2001-09-07 | 2003-10-22 | 주식회사 시스넥스 | Vertical chemical vapor deposition of heating suscpetor and shower head jet |
| KR100931330B1 (en) * | 2007-11-06 | 2009-12-11 | 주식회사 케이씨텍 | Gas injection unit and plasma substrate processing apparatus having the same |
| US8628621B2 (en) | 2007-12-31 | 2014-01-14 | Jusung Engineering Co., Ltd. | Gas injector and film deposition apparatus having the same |
| KR101352365B1 (en) * | 2006-08-09 | 2014-01-16 | 엘아이지에이디피 주식회사 | Plasma processing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101130045B1 (en) * | 2007-12-31 | 2012-03-26 | (주)에이디에스 | Gas injection apparatus and apparatus depositing thin film having the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4387029B2 (en) * | 2000-03-30 | 2009-12-16 | 日本電気株式会社 | Process gas supply structure and film forming apparatus |
| KR20020002715A (en) * | 2000-06-30 | 2002-01-10 | 박종섭 | Showerhead |
| KR100364571B1 (en) * | 2000-12-06 | 2002-12-18 | 주식회사 아이피에스 | Reactor for depositing thin film on wafer |
-
2000
- 2000-12-22 KR KR1020000080726A patent/KR100699815B1/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402332B1 (en) * | 2001-09-07 | 2003-10-22 | 주식회사 시스넥스 | Vertical chemical vapor deposition of heating suscpetor and shower head jet |
| KR101352365B1 (en) * | 2006-08-09 | 2014-01-16 | 엘아이지에이디피 주식회사 | Plasma processing apparatus |
| KR100931330B1 (en) * | 2007-11-06 | 2009-12-11 | 주식회사 케이씨텍 | Gas injection unit and plasma substrate processing apparatus having the same |
| US8628621B2 (en) | 2007-12-31 | 2014-01-14 | Jusung Engineering Co., Ltd. | Gas injector and film deposition apparatus having the same |
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| Publication number | Publication date |
|---|---|
| KR100699815B1 (en) | 2007-03-27 |
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