KR20020051297A - Apparatus and Method for cleaning wafer edge - Google Patents
Apparatus and Method for cleaning wafer edge Download PDFInfo
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- KR20020051297A KR20020051297A KR1020000080904A KR20000080904A KR20020051297A KR 20020051297 A KR20020051297 A KR 20020051297A KR 1020000080904 A KR1020000080904 A KR 1020000080904A KR 20000080904 A KR20000080904 A KR 20000080904A KR 20020051297 A KR20020051297 A KR 20020051297A
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- South Korea
- Prior art keywords
- wafer
- wafer edge
- slurry
- edge portion
- teflon
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 31
- 239000004809 Teflon Substances 0.000 claims abstract description 23
- 229920006362 Teflon® Polymers 0.000 claims abstract description 23
- 239000002002 slurry Substances 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 230000035515 penetration Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- -1 CoO2 Chemical compound 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018871 CoO 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 웨이퍼 엣지 세정방법에 관한 것으로, 특히 화학적 기계적연마(chemical mechanical polishing) 공정이후 웨이퍼 측면에 남아 있는 물질이 후속 공정에서 파티클 소오스(particle source)로 작용하여 웨이퍼 엣지부분의 다이(die)의 수율을 저하시키는 것을 효과적으로 방지하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer edge cleaning method, in particular, a material remaining on the side of the wafer after a chemical mechanical polishing process acts as a particle source in a subsequent process, so that die of the die of the wafer edge portion can be removed. The present invention relates to a technique for effectively preventing the yield from being lowered.
DRMA 및 논리소자 개발을 위해 CMP공정 및 식각공정이 필수적으로 사용되고 있지만 웨이퍼 엣지부분에 남아 있는 증착물질(금속, 폴리머, 폴리실리콘 등)이 CMP나 식각공정이후 완전히 제거되지 않아 후속공정 진행시 파티클 소오스로 작용하여 웨이퍼 엣지부근이나 전체 다이의 수율을 저하시키는 원인으로 작용하고 있어 이를 보완할 수 있는 장치 및 공정의 개발이 필요하다.CMP process and etching process are essential for the development of DRMA and logic devices, but the deposition source (metal, polymer, polysilicon, etc.) remaining on the wafer edge is not completely removed after CMP or etching process. It acts as a cause of lowering the yield of the entire die or near the wafer edge. Therefore, it is necessary to develop a device and a process to compensate for this.
현재 기존의 장치에서 웨이퍼 엣지에 남아 있는 증착물질을 제거하는 방법으로서 세정공정을 개발하고 있지만 이에 따른 2차적인 문제가 발생하여 한계가 있으므로 새로운 장치 및 공정의 개발이 필요하다.Currently, a cleaning process is being developed as a method of removing deposition material remaining on the wafer edge in an existing device, but there is a limit due to a secondary problem, which requires development of a new device and process.
도1 및 도2에 CMP공정 진행후 웨이퍼 엣지에 남아 있는 증착 물질의 양상을 나타내었다. CMP공정이나 식각공정이후 웨이퍼(1) 엣지부분에는 도1 및 도2에 나타낸 바와 같은 양상으로 증착물질(2)이 남아 있어 후속공정에서 웨이퍼 오염, 금속배선의 단락의 원인이 된다.1 and 2 show the deposition material remaining on the wafer edge after the CMP process. After the CMP process or the etching process, the deposition material 2 remains on the edge portion of the wafer 1 in the manner shown in Figs. 1 and 2, which causes wafer contamination and short circuit of the metal wiring in the subsequent process.
본 발명은 상기 문제점을 해결하기 위한 것으로써, 웨이퍼 엣지부분을 선택적으로 CMP를 실시하여 CMP 또는 식각공정 진행후 발생된 증착물질을 효과적으로 제거하기 위한 장치 및 방법을 제공하는데 목적이 있다.An object of the present invention is to provide an apparatus and method for effectively removing the deposition material generated after the CMP or the etching process by selectively performing a CMP on the wafer edge portion.
도1 및 도2는 종래기술에 의한 CMP공정 진행후 웨이퍼 엣지에 남아 있는 증착물질을 양상을 보여주는 도면.1 and 2 is a view showing an aspect of the deposition material remaining on the wafer edge after the CMP process according to the prior art.
도3 및 도4는 본 발명에 의한 웨이퍼 엣지 세정장치를 나타낸 도면.3 and 4 show a wafer edge cleaning apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 웨이퍼 2 : 웨이퍼 엣지 잔유물1: wafer 2: wafer edge residue
10 : 웨이퍼 20 : 폴리싱패드10: wafer 20: polishing pad
30 : 슬러리 공급노즐 40 : 질소 공급노즐30: slurry supply nozzle 40: nitrogen supply nozzle
50 : 척50: Chuck
상기 목적을 달성하기 위한 본 발명은, 웨이퍼 엣지부분의 증착물질을 제거하기 위한 장치에 있어서, 웨이퍼 전면과 후면의 웨이퍼 엣지부분에 90도 간격으로 총 8개 설치되는 테프론판과, 상기 테프론판에 부착된 폴리싱 패드, 상기 각각의 테프론판의 측면에 설치되며, 미소량의 슬러리를 상기 웨이퍼 엣지부분에 공급하기 위한 노즐, 및 웨이퍼 뒷면으로의 슬러리의 침투를 방지하기 위해 웨이퍼 뒷면에 설치되는 질소 노즐을 포함하여 구성된 것을 특징으로 한다.The present invention for achieving the above object, in the apparatus for removing the deposition material of the wafer edge portion, a total of eight Teflon plate is installed on the wafer edge portion of the wafer front and rear at 90 degrees intervals, and the Teflon plate A polishing pad attached to each side of the teflon plate, a nozzle for supplying a small amount of slurry to the wafer edge portion, and a nitrogen nozzle installed on the back side of the wafer to prevent penetration of the slurry into the back side of the wafer Characterized in that configured to include.
또한, 상기 목적을 달성하기 위한 본 발명은, 웨이퍼 엣지부분의 증착물질을 제거하는 방법에 있어서, 웨이퍼 전면과 후면의 웨이퍼 엣지부분에 90도 간격으로 총 8개 설치되는 테프론판과, 상기 테프론판에 부착된 폴리싱 패드, 상기 각각의 테프론판의 측면에 설치되며, 미소량의 슬러리를 상기 웨이퍼 엣지부분에 공급하기 위한 노즐, 및 웨이퍼 뒷면으로의 슬러리의 침투를 방지하기 위해 웨이퍼 뒷면에 설치되는 질소 노즐을 포함하여 구성된 웨이퍼 엣지 세정장치를 이용하여 상기 웨이퍼의 엣지부분을 CMP하여 웨이퍼 엣지부분의 증착물질을 제거하는 것을 특징으로 한다.In addition, the present invention for achieving the above object, in the method for removing the deposition material of the wafer edge portion, a total of eight Teflon plate is installed on the wafer edge portion of the wafer front and rear at 90 degrees intervals, and the Teflon plate A polishing pad attached to the teflon plate, a nozzle for supplying a small amount of slurry to the wafer edge portion, and nitrogen installed on the back side of the wafer to prevent penetration of the slurry into the back side of the wafer. CMP the edge portion of the wafer using a wafer edge cleaning device including a nozzle to remove the deposition material of the wafer edge portion.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
도3에 나타낸 바와 같이 웨이퍼(10)의 엣지부분을 선택적으로 CMP할 수 있도록 장비를 구성하여 웨이퍼 엣지 부분에 미량의 슬러리를 흘려준다. 이때, 슬러리가 웨이퍼 중심부로 이동하여 웨이퍼 전면을 재오염시킬 수 있으므로 반드시 웨이퍼를 지지하고 있는 척은 일정속도 이상으로 고속회전시켜 슬러리가 웨이퍼 중심부로 이동하는 것을 방지한다. 또한, 웨이퍼 뒷면에 슬러리가 침투하여 재오염시키는 것을 방지하기 위하여 웨이퍼 뒷면에 질소 노즐(40)를 설치한다. 이때, 질소의 압력은 적정 압력을 유지하여 웨이퍼를 지지하고 있는 척의 진공에 영향을 주지 않고 슬러리의 침투를 방지해야 한다.As shown in FIG. 3, a device is configured to selectively CMP the edge portion of the wafer 10 so that a small amount of slurry is flowed to the wafer edge portion. At this time, since the slurry can move to the center of the wafer to recontaminate the entire surface of the wafer, the chuck supporting the wafer must be rotated at a high speed over a predetermined speed to prevent the slurry from moving to the center of the wafer. In addition, a nitrogen nozzle 40 is installed on the back side of the wafer to prevent the slurry from penetrating and recontaminating the back side of the wafer. At this time, the pressure of nitrogen should be maintained at an appropriate pressure to prevent the penetration of the slurry without affecting the vacuum of the chuck supporting the wafer.
한편, 웨이퍼(10)가 고속회전을 하므로 웨이퍼 이탈방지를 위하여 엣지부분을 CMP하는 장치는 테프론 재질로 되어 있는 사각판에 폴리싱패드(polishing pad)(20)를 붙여 도4에 나타낸 바와 같이 90도 간격으로 웨이퍼 전면과 후면에 총 8개(a,a',b,b',c,c',d,d')를 설치함과 동시에 웨이퍼 엣지부분에 CMP를 위한 슬러리를 공급하는 노즐(30)을 테프론면과 평행하게 설치하여 고정시킨다.On the other hand, since the wafer 10 rotates at a high speed, the device for CMP edges to prevent the wafer from falling off is attached with a polishing pad 20 to a square plate made of Teflon material, as shown in FIG. Eight nozzles (a, a ', b, b', c, c ', d, d') are installed at the front and rear surfaces of the wafer at intervals, and nozzles for supplying slurry for CMP to the wafer edges (30) ) And install it in parallel with the Teflon surface.
실제적으로 웨이퍼 엣지부분을 선택적으로 CMP하는 부분은 테프론 재질로 되어 있는 사각형 모양의 판(a,b)에 패드(20)를 붙여 사용하며, 이 부분은 장착, 탈착이 가능하게끔 구성되어야 한다. 상기 테프론판의 크기는 20mm 이내로 하며, 웨이퍼 엣지부분에서 10mm 이내로 설치되도록 한다.Actually, the CMP portion of the wafer edge portion is selectively used by attaching the pads 20 to the rectangular plates (a, b) made of Teflon material, and this portion should be configured to be mounted and detached. The size of the Teflon plate is to be within 20mm, and to be installed within 10mm from the wafer edge portion.
상기한 바와 같이 웨이퍼(10)를 진공 척(50)에 고정하고 총 8개의 폴리싱패드(20)가 장착되어 있는 테프론 핀을 웨이퍼에 접근시켜 선택적으로 웨이퍼 엣지부분을 CMP할 수 있는 상기의 장치를 이용하여 웨이퍼 엣지를 선택적으로 연마하여 기존의 문제점을 해결할 수 있다. 상기 웨이퍼를 지지하는 척(50)은 160mm이며, 두개의 진공라인을 가진다.As described above, the above-mentioned apparatus capable of selectively CMP wafer edge portions by fixing the wafer 10 to the vacuum chuck 50 and accessing the Teflon pins equipped with a total of eight polishing pads 20 to the wafer. By selectively polishing the wafer edge can solve the existing problems. The chuck 50 for supporting the wafer is 160 mm and has two vacuum lines.
상기 노즐을 통해 각 위치마다 서로 다른 슬러리를 공급하는 것도 가능하며, 슬러리로는 SiO2, CoO2, ZrO2, Al2O3 등을 사용할 수 있다. 이때, 슬러리의 pH는 3-12의 범위내에서 조절하는 것이 바람직하다.It is also possible to supply different slurries at each position through the nozzle, and as the slurry, SiO 2, CoO 2, ZrO 2, Al 2 O 3, or the like may be used. At this time, the pH of the slurry is preferably adjusted within the range of 3-12.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 웨이퍼 엣지부분만 선택적으로 CMP하여 웨이퍼 측면 및 남아 있는 증착물질을 이물질의 오염없이 제거함으로써 전체 다이의 수율을 증대시킬 뿐만 아니라 측면 및 엣지에 남아 있는 증착물질이 파티클 소오스로 작용하는 것을 사전에 예방할 수 있다.The present invention selectively increases only the wafer edge portion to remove the wafer side and remaining deposition material without contamination of the foreign matter, thereby increasing the overall die yield, and preliminarily, the deposition material remaining on the side and edge acts as a particle source. Can be prevented.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000080904A KR100685673B1 (en) | 2000-12-22 | 2000-12-22 | Apparatus and Method for cleaning wafer edge |
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| KR1020000080904A KR100685673B1 (en) | 2000-12-22 | 2000-12-22 | Apparatus and Method for cleaning wafer edge |
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| KR20020051297A true KR20020051297A (en) | 2002-06-28 |
| KR100685673B1 KR100685673B1 (en) | 2007-02-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9721801B2 (en) | 2012-02-03 | 2017-08-01 | Samsung Electronics Co., Ltd. | Apparatus and a method for treating a substrate |
| CN111430223A (en) * | 2020-05-15 | 2020-07-17 | 中国科学院微电子研究所 | Pre-cleaning device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06210520A (en) * | 1993-01-14 | 1994-08-02 | Hitachi Zosen Corp | Method of beveling work to hard-to-cut material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9721801B2 (en) | 2012-02-03 | 2017-08-01 | Samsung Electronics Co., Ltd. | Apparatus and a method for treating a substrate |
| CN111430223A (en) * | 2020-05-15 | 2020-07-17 | 中国科学院微电子研究所 | Pre-cleaning device |
| CN111430223B (en) * | 2020-05-15 | 2023-06-23 | 中国科学院微电子研究所 | Pre-cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100685673B1 (en) | 2007-02-23 |
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