KR20020038310A - Method for solution gap of photoresist by photoresist processing - Google Patents

Method for solution gap of photoresist by photoresist processing Download PDF

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Publication number
KR20020038310A
KR20020038310A KR1020000068462A KR20000068462A KR20020038310A KR 20020038310 A KR20020038310 A KR 20020038310A KR 1020000068462 A KR1020000068462 A KR 1020000068462A KR 20000068462 A KR20000068462 A KR 20000068462A KR 20020038310 A KR20020038310 A KR 20020038310A
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South Korea
Prior art keywords
photoresist
wafer
negative photoresist
exposure process
topology
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KR1020000068462A
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Korean (ko)
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KR100702114B1 (en
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최중일
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박종섭
주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: Provided is a method for solving the thickness difference of a photoresist in an exposure process, which can improve the properties of semiconductor elements, reliability, and yield. CONSTITUTION: The method for solving the thickness difference of the photoresist comprises the steps of: filling a first negative photoresist(103) into topologies of a wafer to flat the wafer; spreading a second photoresist(105) on the flatted wafer and performing the exposure process. The first photoresist(103) and the second photoresist(105) have a dissolution velocity of 500 angstrom/min.

Description

노광공정에 의한 포토레지스트의 단차 해결방법{Method for solution gap of photoresist by photoresist processing}Solution for step difference of photoresist by exposure process {Method for solution gap of photoresist by photoresist processing}

본 발명은 포토레지스트의 단차 해결방법에 관한 것으로, 보다 상세하게는토폴로지가 존재하는 웨이퍼 상에 제 1 네거티브 포토레지스트를 도포하여, 웨이퍼 상에 함몰되어진 부위가 네거티브 포토레지스트로 매립되어 평탄한 웨이퍼를 형성함으로써, 상기 평탄화된 웨이퍼 상에서 제 2 네거티브 포토레지스트를 이용하여 노광공정을 진행하는 노광공정에 의한 포토레지스트의 단차 해결방법에 관한 것이다.The present invention relates to a method for solving the step difference of the photoresist, and more particularly, by applying a first negative photoresist on a wafer in which the topology exists, the recessed portion on the wafer is filled with the negative photoresist to form a flat wafer. Thus, the present invention relates to a method for resolving a step of photoresist by an exposure step of performing an exposure step using a second negative photoresist on the planarized wafer.

최근 반도체 공정은 선폭의 크기가 다운됨에 따라서 어셉트 레티오(aspect ratio)가 증가하고 있으며, 포토레지스트의 두께는 패턴의 해상력 확보를 위하여 계속 낮아지고 있는 추세이다.In recent years, as the line width decreases, the aspect ratio of the semiconductor process is increasing, and the thickness of the photoresist is continuously decreasing to secure the resolution of the pattern.

일반적으로 포토레지스트는 포토 에칭에 의해서 반도체 표면 등을 에칭할 때 사용하는 감광성 수지이며, 반도체 소자의 정밀도를 결정하는 미세한 패턴을 얻기 위해서는 포토레지스트는 막이 얇고 균일하여야 하고, 실리콘 웨이퍼 및 실리콘 산화막과 같은 기재와의 밀착성이 좋으며, 내산성이 좋고 자외선 등에 대해서도 감도가 좋아야 한다.In general, photoresists are photosensitive resins used to etch semiconductor surfaces and the like by photo etching, and in order to obtain fine patterns that determine the accuracy of semiconductor devices, the photoresist should be thin and uniform, such as silicon wafers and silicon oxide films. It should have good adhesion with the substrate, good acid resistance and good sensitivity to ultraviolet rays and the like.

도 1a 또는 도 1b는 종래의 노광공정에 의한 포토레지스트의 단차 발생 과정을 순차적으로 나타낸 단면도이다.1A or 1B are cross-sectional views sequentially illustrating a step generation process of a photoresist by a conventional exposure process.

도 1a에 도시된 바와 같이, 웨이퍼 상(1)에는 토폴로지가 존재하여 웨이퍼의 표면이 균일하지 않으며, 상기 토폴로지로 인한 웨이퍼 상(1)의 함몰된 부위의 깊이 또한 균일하지 않다.As shown in Fig. 1A, there is a topology on the wafer image 1 such that the surface of the wafer is not uniform, and the depth of the recessed portion of the wafer image 1 due to the topology is also not uniform.

이어서, 도 1b에 도시된 바와 같이, 상기 토폴로지가 존재하는 웨이퍼 상(1)에 포지티브 포토레지스트(3)를 이용한 노광공정을 실시하면, 상기 웨이퍼 상(1)의함몰된 부분이 평탄화 되지 않고 단차가 생긴다.Subsequently, as shown in FIG. 1B, when the exposure process using the positive photoresist 3 is performed on the wafer image 1 on which the topology exists, the recessed portion of the wafer image 1 is not flattened and the step difference is increased. Occurs.

상기와 같이 포지티브 포토레지스트는 노광기에서 노광작업 진행 후 현상액에 용해되는 특성을 지니고 있으므로, 웨이퍼 상에 생긴 토폴로지(홀, 라인 및 공간 패턴 등)는 노광공정 후에 포토레지스트의 단차 차이로 나타난다.As described above, since the positive photoresist has a property of dissolving in a developer after the exposure operation is performed in the exposure machine, the topology (holes, lines, and space patterns, etc.) generated on the wafer appears as a difference in the photoresist level after the exposure process.

또한, 상기 토폴로지로 기인한 포토레지스트의 높이 차이는 후속공정인 식각공정 시 식각상태가 불균일하게 될 수 있는 문제점을 야기한다.In addition, the height difference of the photoresist due to the topology causes a problem that the etching state may become uneven during the subsequent etching process.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로, 본 발명의 목적은 토폴로지가 존재하는 웨이퍼 상에 제 1차 공정으로 네거티브 포토레지스트를 도포하여, 웨이퍼 상에 함몰되어진 부위가 네거티브 포토레지스트로 매립되어 평탄한 웨이퍼를 형성함으로써, 제 2차 공정에서 평탄화된 웨이퍼 상에서 네거티브 포토레지스트를 이용하여 노광공정을 진행하여 포토레지스트의 단차를 해결하는 것이 목적이다.The present invention has been made to solve the above problems, and an object of the present invention is to apply a negative photoresist in a first process on a wafer in which a topology exists, so that a portion recessed on the wafer becomes a negative photoresist. It is an object of the present invention to solve the step difference of the photoresist by forming an exposed wafer by forming a flat wafer, and performing an exposure process using a negative photoresist on the flattened wafer in the second process.

도 1a 또는 도 1b는 종래의 노광공정에 의한 포토레지스트의 단차 발생 과정을 순차적으로 나타낸 단면도이다.1A or 1B are cross-sectional views sequentially illustrating a step generation process of a photoresist by a conventional exposure process.

도 2a 내지 도 2c는 본 발명에 따른 노광공정에 의한 포토레지스트의 단차 해결방법을 순차적으로 나타낸 단면도이다.2A to 2C are cross-sectional views sequentially illustrating a method for solving the step difference of the photoresist by the exposure process according to the present invention.

-- 도면의 주요부분에 대한 부호의 설명 ---Explanation of symbols for the main parts of the drawing-

100 : 웨이퍼 102 : 토폴로지100: wafer 102: topology

103 : 제 1 네거티브포토레지스트103: first negative photoresist

105 : 제 2 네거티브포토레지스트105: second negative photoresist

상기 목적을 달성하기 위하여, 본 발명은 토폴로지가 존재하는 웨이퍼 상에 제 1 네거티브 포토레지스트를 이용하여 도포하는 단계와, 상기 결과물 상에 제 2 네거티브 포토레지스트를 이용하여 노광공정을 진행하는 단계를 포함하여 이루어진 것을 특징으로 하는 노광공정에 의한 포토레지스트의 단차 해결방법을 제공한다.In order to achieve the above object, the present invention includes applying a first negative photoresist on a wafer having a topology, and performing an exposure process using a second negative photoresist on the resultant It provides a method for solving the step difference of the photoresist by the exposure step, characterized in that made.

본 발명은 홀, 라인 및 공간 패턴과 같은 토폴로지가 존재하는 웨이퍼 상에 제 1 네거티브 포토레지스트를 도포하여, 웨이퍼 상에 함몰되어진 부위가 제 1 네거티브 포토레지스트로 매립되어 단차가 없이 평탄한 웨이퍼를 형성한 후, 상기 평탄화된 웨이퍼 상에서 제 2 네거티브 포토레지스트를 이용하여 노광공정을 진행하여 균일한 포토레지스트층을 형성할 수 있다.According to the present invention, a first negative photoresist is applied onto a wafer on which topologies such as holes, lines, and space patterns exist, and recessed portions of the wafer are filled with the first negative photoresist to form a flat wafer without steps. Thereafter, an exposure process may be performed using the second negative photoresist on the planarized wafer to form a uniform photoresist layer.

이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명하고자 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2a 내지 도 2c는 본 발명에 따른 노광공정에 의한 포토레지스트의 단차 해결방법을 순차적으로 나타낸 단면도이다.2A to 2C are cross-sectional views sequentially illustrating a method for solving the step difference of the photoresist by the exposure process according to the present invention.

도 2a에 도시된 바와 같이, 웨이퍼(100)의 상부면에는 토폴로지(102)가 존재하여 웨이퍼의 표면이 균일하지 않으며, 상기 토폴로지(102)로 인한 웨이퍼(100) 상의 함몰된 부위의 깊이 또한 균일하지 않다.As shown in FIG. 2A, the top surface of the wafer 100 has a topology 102 such that the surface of the wafer is not uniform, and the depth of the recessed portion on the wafer 100 due to the topology 102 is also uniform. Not.

이어서, 도 2b에 도시된 바와 같이, 상기 토폴로지(102)가 존재하는 웨이퍼 (100)의 상부면에 제 1 네거티브 포토레지스트(103)를 이용하여 도포한다.Subsequently, as shown in FIG. 2B, a first negative photoresist 103 is applied to the upper surface of the wafer 100 in which the topology 102 exists.

이때, 상기 결과물은 노광기로 전달되지 않고 트랙 내에 현상액이 존재하는 곳으로 보내져서, 웨이퍼 상부의 제 1 네거티브 포토레지스트(103)는 500Å/min의 용해 속도를 가지고 수지 분자량 분포를 조절하여 원하는 높이만큼 용해시킬 수 있다. 즉, 상기 웨이퍼 상(100)의 토폴로지(102)에서 함몰되어진 부위만 제 1 네거티브 포토레지스트(103)가 잔존하게 된 상태로 만들 수 있다.At this time, the resultant is not transferred to the exposure machine, but is sent to the place where the developer exists in the track, so that the first negative photoresist 103 on the wafer has a dissolution rate of 500 mW / min and adjusts the resin molecular weight distribution to a desired height. Can be dissolved. That is, only the portions recessed in the topology 102 of the wafer image 100 may be made to remain in the state where the first negative photoresist 103 remains.

도 2c에 도시된 바와 같이, 상기 결과물 상에 제 2 네거티브 포토레지스트(105)를 이용하여 노광공정을 진행한다.As shown in FIG. 2C, an exposure process is performed on the resultant using a second negative photoresist 105.

여기서, 상기 결과물처럼 토폴로지(102)가 없어져 평탄해진 웨이퍼 상에 500Å/min의 용해속도를 가지고 있는 제 2 네거티브 포토레지스트(105)를 도포하고 노광공정을 거친 후에 현상 공정을 실시한다.Here, the second negative photoresist 105 having a dissolution rate of 500 kW / min is applied onto the flattened wafer with the topological 102 removed as described above, and subjected to an exposure step, followed by a development step.

이때, 상기 제 1 네거티브 포토레지스트(103)를 통하여 웨이퍼(100)의 상부면 함몰 부위가 매립되어있는 상태임으로써, 상기 제 2 네거티브 포토레지스트(105)를 도포하여도 단차가 존재하지 않기 때문에 포토레지스트의 단차가 없이 평탄해진다.In this case, since the recessed portion of the upper surface of the wafer 100 is buried through the first negative photoresist 103, even when the second negative photoresist 105 is applied, there is no step. The resist becomes flat without the step difference.

따라서, 상기한 바와 같이, 본 발명에 따른 노광공정에 의한 포토레지스트의 단차 해결방법을 이용하게 되면, 홀, 라인 및 공간 패턴과 같은 토폴로지가 존재하는 웨이퍼 상에 제 1 네거티브 포토레지스트를 도포하여, 웨이퍼 상에 함몰되어진 부위가 제 1 네거티브 포토레지스트로 매립되어 단차가 없이 평탄한 웨이퍼를 형성한 후, 상기 평탄화된 웨이퍼 상에서 제 2 네거티브 포토레지스트를 이용하여 노광공정을 진행하여 균일한 포토레지스트층을 형성할 수 있는 매우 유용하고 효과적인 발명이다.Therefore, as described above, when using the photoresist step resolution method according to the exposure process according to the present invention, by applying a first negative photoresist on a wafer having a topology such as a hole, a line and a space pattern, After the recessed part of the wafer is filled with the first negative photoresist to form a flat wafer without a step, an exposure process is performed on the flattened wafer using a second negative photoresist to form a uniform photoresist layer. It is a very useful and effective invention that can be done.

Claims (2)

토폴로지가 존재하는 웨이퍼 상부면에 제 1 네거티브 포토레지스트로 토폴로지를 매립하여 웨이퍼 전면을 평탄화하는 단계와;Filling the top surface with the first negative photoresist on the top surface of the wafer where the topology is present to planarize the entire surface of the wafer; 상기 결과물 상에 제 2 네거티브 포토레지스트를 이용하여 노광공정을 진행하는 단계를 포함하여 이루어진 것을 특징으로 하는 노광공정에 의한 포토레지스트의 단차 해결방법.And a step of performing an exposure process by using a second negative photoresist on the resultant. 제 1항에 있어서, 상기 제 1 네거티브 포토레지스트와 제 2 네거티브 포토레지스트는 현상액에 의하여 500Å/min의 용해속도를 가지고 있는 것을 특징으로 하는 노광공정에 의한 포토레지스트의 단차 해결방법.The method of claim 1, wherein the first negative photoresist and the second negative photoresist have a dissolution rate of 500 mW / min by a developing solution.
KR1020000068462A 2000-11-17 2000-11-17 Method for solution gap of photoresist by photoresist processing KR100702114B1 (en)

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