KR200167583Y1 - Plasma etching apparatus for space manufacture - Google Patents
Plasma etching apparatus for space manufacture Download PDFInfo
- Publication number
- KR200167583Y1 KR200167583Y1 KR2019940028072U KR19940028072U KR200167583Y1 KR 200167583 Y1 KR200167583 Y1 KR 200167583Y1 KR 2019940028072 U KR2019940028072 U KR 2019940028072U KR 19940028072 U KR19940028072 U KR 19940028072U KR 200167583 Y1 KR200167583 Y1 KR 200167583Y1
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- KR
- South Korea
- Prior art keywords
- etching apparatus
- plasma etching
- wafer
- anode electrode
- focus ring
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 고안은 반도체 제조공정중 스페이서 제조용 플라즈마 식각 장치에 관한 것으로, 아노드전극 표면을 평탄하게 성형하며 아노드전극 표면 및 포커스링의 구멍을 웨이퍼형상으로 형성하고 장치내의 클램프를 제거하여 구성된 플라즈마 식각장치를 제공한다.The present invention relates to a plasma etching apparatus for manufacturing a spacer during a semiconductor manufacturing process. The plasma etching apparatus is formed by flatly forming an anode electrode surface, forming a hole in the anode electrode surface and a focus ring in a wafer shape, and removing a clamp in the device. To provide.
이에따라 웨이퍼의 식각비율이 균일해지고, 장치의 구조도 단순해진다.As a result, the etching rate of the wafer becomes uniform, and the structure of the apparatus is also simplified.
Description
제1도는 스페이서 플라즈마 식각장치의 개략적인 구성도.1 is a schematic diagram of a spacer plasma etching apparatus.
제2a도 및 제2b도는 종래의 아노드 전극의 평면도 및 단면도.2A and 2B are plan and cross-sectional views of a conventional anode electrode.
제3a도 및 제3b도는 종래의 포커스링의 평면도 및 단면도.3A and 3B are plan and cross-sectional views of a conventional focus ring.
제4a도 및 제4b도는 본 고안에 따른 전극의 평면도 및 단면도.4a and 4b is a plan view and a cross-sectional view of the electrode according to the present invention.
제5a도 및 제5b도는 본 고안에 따른 포커스링의 평면도 및 A-A 선 단면도.5a and 5b is a plan view and a cross-sectional view taken along line A-A of the focus ring according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 10 : 아노드전극 2, 13 : 포커스링1, 10 anode electrode 2, 13 focus ring
3 : 웨이퍼 4 : 클램프3: wafer 4: clamp
5 : 캐소드 전극 6 : 돔형표면5 cathode electrode 6 domed surface
11 : 평탄면 12, 14 : 직선부11 flat surface 12, 14 straight part
본 고안은 반도체 제조장비에 관한 것이며, 특히 반도체의 스페이서 식각용 플라즈마 식각장치의 전극 및 포커스링에 관한 것이다.The present invention relates to a semiconductor manufacturing equipment, and more particularly to an electrode and a focus ring of a plasma etching apparatus for spacer etching of a semiconductor.
반도체 게이트전극의 측면에 산화막층을 적층하고 식각하여 스페이서(Spacer)를 형성함에 있어서 아노드(Anode) 전극 표면에 웨이퍼를 놓고 플라즈마를 발생시켜 산화막층을 식각하는 플라즈마 식각장치가 사용되고 있다.In forming a spacer by stacking and etching an oxide layer on a side surface of a semiconductor gate electrode, a plasma etching apparatus is used to etch an oxide layer by generating a plasma by placing a wafer on an anode electrode surface.
제1도에 플라즈마 식각장치의 챔버내의 구성이 개략적으로 도시 되어 있다. 플라즈마 식각장치는 플라즈마 발생용 캐소드 (Cathode)전극(5)으로 아노드전극(1)상에 놓인 웨이퍼(3)에 플라즈마를 가하여 스페이서를 형성한다. 제2a도 내지 제3b도에 도시되어 있는 바와같이 기존의 아노드전극(1)과 아노드전극(1)을 둘러싸 전극을 보호하는 포커스링(2)은 모두 원형이며, 특히 아노드전극(1)의 표면은 돔(Dome)형의 블록한 표면(6)으로 형성되어 있다. 또한 실제의 웨이퍼(3)는 일측에 직선부를 가진 형태이므로 플라즈마가 아노드전극(1)에 손상을 입히지 않도록 웨이퍼형상의 구멍을 가진 클램프(Clamp, 4)로 웨이퍼(3)를 아노드전극(1)에 대해 누른 상태에서 식각작업을 수행하게 된다. 이에따라 아노드전극(1)의 블록한 돔형의 표면(3)(6)과 클램프(4)에 의한 부분적인 차폐효과로 인해 웨이퍼의 원주모서리 부근쪽으로 갈수록 식각량이 적게 되어 반도체의 품질에 차이가 나게 된다는 것이 중대한 문제점으로 지적되고 있다.The configuration in the chamber of the plasma etching apparatus is schematically shown in FIG. In the plasma etching apparatus, a plasma is applied to a wafer 3 placed on the anode electrode 1 by using a cathode for generating plasma 5 to form a spacer. As shown in FIGS. 2A to 3B, both the conventional anode electrode 1 and the focus ring 2 surrounding the anode electrode 1 to protect the electrode are circular, and in particular, the anode electrode 1 ) Is formed of a domed (block) surface 6. In addition, since the actual wafer 3 has a straight portion at one side, the wafer 3 is clamped by a clamp 4 having a wafer-shaped hole so that the plasma does not damage the anode 1. Press and hold down for 1) to perform etching. Accordingly, due to the partial shielding effect of the domed surfaces 3 and 6 and the clamp 4 of the anode electrode 1, the amount of etching decreases toward the vicinity of the circumferential edge of the wafer, resulting in a difference in the quality of the semiconductor. Being pointed out is a serious problem.
이러한 종래의 문제점을 해결하여 본 고안은 식각이 균등하게 행해 질 수 있는 플라즈마 식각장치를 제공하는 것을 목적으로 한다.The object of the present invention is to provide a plasma etching apparatus which can be etched evenly by solving the conventional problems.
본 고안의 다른 목적은 클램프를 제거하여 식각장치를 단순화하는 것이다.Another object of the present invention is to simplify the etching apparatus by removing the clamp.
이러한 목적을 달성하기 위해 본 고안은 기존의 플라즈마 식각장치 중 클램프를 제거하고 평평한 웨이퍼형상의 표면을 갖는 아노드 전극 및 웨이퍼형상의 구멍을 가진 포커스링을 구비한 플라즈마 식각장치를 제공한다.In order to achieve the above object, the present invention provides a plasma etching apparatus including an anode electrode having a flat wafer-shaped surface and a focus ring having a wafer-shaped hole, in which a clamp is removed from the existing plasma etching apparatus.
이하 첨부도면을 참조하여 본 고안을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
본 고안에 따른 아노드전극(10) 및 포커스링(13)이 제4a도 내지 제5b도에 도시되어 있다.The anode electrode 10 and the focus ring 13 according to the present invention are shown in FIGS. 4a to 5b.
제4a도 및 제4b도에 도시되어 있듯이 본 고안에 따른 아노드전극(10)은 웨이퍼의 형상과 일치하는 형상의 표면(11)을 갖도록 일측에 직선부(12)를 형성한 형태의 전극이며, 전극(10)의 표면(11)은 평탄하게 형성되어 있다. 또한 이에 대응하여 포커스링(13)에도 웨이퍼 형상의 구멍(15)을 형성하도록 일측에 직선부(14)를 형성한다.As shown in FIGS. 4A and 4B, the anode electrode 10 according to the present invention is an electrode having a straight portion 12 formed on one side to have a surface 11 having a shape that matches the shape of the wafer. The surface 11 of the electrode 10 is formed flat. Correspondingly, a straight portion 14 is formed on one side of the focus ring 13 so as to form a wafer-shaped hole 15.
이에따라 아노드전극(10)에 웨이퍼가 밀착되어 장착되며 포커스링(13)으로 아노드전극(10)이 고주파 플라즈마에 노출되지 않으므로 클램프가 불필요하게 되어 제거할 수 있으며, 클램프에 의한 차폐가 방지되며 또한 아노드전극이 평탄하므로 웨이퍼의 식각비율도 균일하게 된다.Accordingly, the wafer is attached to the anode electrode 10 in close contact, and the anode 10 is not exposed to the high frequency plasma by the focus ring 13 so that the clamp is unnecessary and can be removed, and the shielding by the clamp is prevented. In addition, since the anode is flat, the etching rate of the wafer is also uniform.
따라서 본 고안에 따른 웨이퍼형상의 아노드전극과 포커스링을 채용함으로써 식각장치가 단순해져 원가절감에 기여할 수 있고, 식각비율이 균등해져 품질향상에도 기여하게 된다.Therefore, by adopting the wafer-shaped anode electrode and the focus ring according to the present invention, the etching apparatus can be simplified, thereby contributing to cost reduction, and the etching ratio is evenly contributed to quality improvement.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940028072U KR200167583Y1 (en) | 1994-10-27 | 1994-10-27 | Plasma etching apparatus for space manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940028072U KR200167583Y1 (en) | 1994-10-27 | 1994-10-27 | Plasma etching apparatus for space manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960015595U KR960015595U (en) | 1996-05-17 |
| KR200167583Y1 true KR200167583Y1 (en) | 2000-02-01 |
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ID=19396456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940028072U KR200167583Y1 (en) | 1994-10-27 | 1994-10-27 | Plasma etching apparatus for space manufacture |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200167583Y1 (en) |
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1994
- 1994-10-27 KR KR2019940028072U patent/KR200167583Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR960015595U (en) | 1996-05-17 |
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