KR20010088929A - AlGaInN LED device and their fabrication method - Google Patents
AlGaInN LED device and their fabrication method Download PDFInfo
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Abstract
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본 발명은 새로운 AlGaInN 반도체 소자 및 그 제조 방법에 관한 것으로서,더욱 상세하게는 종래의 LED가 가지는 역방향 ESD(electro static discharge) 전압을 획기적으로 향상시키는 방법에 관한 것이다.The present invention relates to a novel AlGaInN semiconductor device and a method for manufacturing the same, and more particularly, to a method for dramatically improving the reverse electrostatic discharge (ESD) voltage of a conventional LED.
일반적으로 종래의 AlGaInN계 LED(Light Emitting Diode) 광 소자는, 첨부도면 도 1에 도시된 바와 같이, 절연성 기판인 사파이어 기판(10) 상에 buffer층(11), n형 GaN 층(12), InCaN(또는 GaN) 활성층(13), p형 GaN층(14), 투명전극(15), n형 금속전극(16) 및 p형 금속전극(17)으로 형성하는 구조이다.In general, a conventional AlGaInN-based LED (Light Emitting Diode) optical element, as shown in Figure 1, the buffer layer 11, n-type GaN layer 12, on the sapphire substrate 10 is an insulating substrate, The InCaN (or GaN) active layer 13, the p-type GaN layer 14, the transparent electrode 15, the n-type metal electrode 16, and the p-type metal electrode 17 are formed.
이 구조에서 보듯이 일반적인 화합물 반도체 광소자의 원리는p 전극을 통해 들어오는 정공과 n 전극을 통해 들어오는 전자가 활성층에서 결합하여 활성층 물질 조성의 bandgap에 해당하는 빛을 방출하는 구조이다.As shown in this structure, the principle of a general compound semiconductor optical device is a structure in which holes coming in through the p electrode and electrons coming in through the n electrode are combined in the active layer to emit light corresponding to the bandgap of the active layer material composition.
일반적으로 AlGaInN 계 LED는 energy gap 이 상당히 큰 물질임에도 불구하고 결정의 품질이 나쁘고 따라서 대체적으로 ESD(electro static discharge)에 대해서 취약하다. 순방향의 경우 300V - 1000V 정도이고 역방향의 경우 100V - 1000V로 특히 역방향의 ESD 전압 특성이 더욱 나쁜 것으로 알려져 있다. 이것은 역방향 전압에서 LED의 p-n junction 사이에 큰 전계가 걸리기 때문이다.In general, AlGaInN-based LEDs have poor crystal quality, but are generally vulnerable to electrostatic discharge (ESD), despite the fact that they have large energy gaps. 300V-1000V in the forward direction and 100V-1000V in the reverse direction are known to have worse ESD voltage characteristics in the reverse direction. This is because a large electric field is applied between the p-n junctions of the LED at the reverse voltage.
종래의 AlGaInN 계 LED는 이러한 역방향 ESD에 완전히 노출된 구조를 가지고 있고 따라서 역방향 ESD 전압이 매우 낮다.Conventional AlGaInN-based LEDs have a structure that is fully exposed to such reverse ESD and therefore the reverse ESD voltage is very low.
본 발명은 상기한 문제점을 해결하기 위하여 새롭게 안출된 기술로서, 본 발명의 목적은 종래의 AlGaInN 계 LED의 최상층에 위치한 p-GaN 층 위에 n형의 AlGaInN 결정층을 구비하고 상기한 p-GaN과 새롭게 형성한 n-AlGaInN 층으로 p-ndiode를 형성하여 AlGaInN LED와 최상층부에 새롭게 형성한 p-n diode를 전기적으로 연결하여 AlGaInN LED의 역방향 ESD 전압을 획기적으로 향상시키는 반도체 소자 및 그 제조 방법을 제공하는 것이다.The present invention is a novel design to solve the above problems, the object of the present invention is to provide an n-type AlGaInN crystal layer on the p-GaN layer located on the top layer of the conventional AlGaInN-based LED and the p-GaN and To provide a semiconductor device and a method of manufacturing the same to form a p-ndiode with a newly formed n-AlGaInN layer to electrically connect the AlGaInN LED and the newly formed pn diode in the uppermost layer to significantly improve the reverse ESD voltage of the AlGaInN LED .
도 1은 절연성 기판을 사용한 종래 방식의 AlGaInN계 LED 구조를 도시한 단면도.1 is a cross-sectional view showing a conventional AlGaInN-based LED structure using an insulating substrate.
도 2는 본 발명에 의한 절연성 기판을 사용한 AlGaInN 계 LED 구조의 단면도2 is a cross-sectional view of an AlGaInN-based LED structure using an insulating substrate according to the present invention
도 3 는 본 발명에 의한 절연성 기판을 사용한 AlGaInN 계 LED 평면도3 is a plan view of an AlGaInN-based LED using an insulating substrate according to the present invention
도 4 는 본 발명에 의한 절연성 기판을 사용한 AlGaInN 계 LED의 제조 순서4 is a manufacturing sequence of the AlGaInN-based LED using the insulating substrate according to the present invention
< 도면의 주요 부분에 대한 부호의 설명 ><Description of the code | symbol about the principal part of drawing>
10, 21, 41, 기판 11, 22, 42, 버퍼층10, 21, 41, substrate 11, 22, 42, buffer layer
12, 23, 43, 하층의 n-AlGaInN 층 13, 24, 44, AlGaInN 활성층12, 23, 43, lower n-AlGaInN layer 13, 24, 44, AlGaInN active layer
14, 25, 33, 45, p-AlGaInN 층 15. 27, 32, 47, 투명전극14, 25, 33, 45, p-AlGaInN layer 15. 27, 32, 47, transparent electrode
16, 17, 29, 35, 49, 금속전극 28, 34, 48, 절연성 보호막16, 17, 29, 35, 49, metal electrodes 28, 34, 48, insulating protective film
26, 31, 46, 상층의 n-AlGaInN 층 36, 도 2를 설명하는 절단면26, 31, 46, upper cut n-AlGaInN layer 36, cut surface explaining FIG.
이와 같은 목적을 달성하기 위해서 본 발명이 제공하고자 하는 새로운 구조는 LED는 소정의 두께의 n형 AlGaInN 결정막을 기존의 p-GaN 상층부에 형성하고 상기한 p-GaN과 새롭게 형성한 n형 AlGaInN 사이에 형성된 p-n diode를 AlGaInN계 LED와 서로 역방향이 되게 전기적 연결을 하는 것을 특징으로 한다.In order to achieve the above object, a new structure to be provided by the present invention is to provide an LED in which an n-type AlGaInN crystal film having a predetermined thickness is formed on an existing p-GaN upper layer and between the p-GaN and the newly formed n-type AlGaInN. The pn diode formed is electrically connected to the AlGaInN-based LED in a reverse direction to each other.
첨부된 도면 도 2는 본 발명에 따른 LED와 역방향 ESD 개선용 p-n diode가 집적된 LED의 구조를 도시한 단면도이다.2 is a cross-sectional view illustrating a structure of an LED integrated with an LED and a p-n diode for improving reverse ESD according to the present invention.
본 발명의 바람직한 실시 예를 첨부 도면에 의거 상세히 설명하면 다음과 같다. 기판(21) 위에 적절한 완충층 (22) 을 성장 시키고, n-AlGaInN 층(23)을 성장시킨 후 Al(x)Ga(y)In(z)N/ Al(x1)Ga(y1)In(z1)N(24)의 다층 활성층을 성장 시키고, 그 위에 p- AlGaInN(25)를 성장시킨 후 n형 Al(x)Ga(y)In(z)N(26)을 성장시키고 투광성 또는 비투광서의 전면 전극인 p 전극(27)을 형성하고 보호막(28)을 형성한 후 n 전극(29)을 도시한 바와 같이 구성한 것을 특징으로 한다.Preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. An appropriate buffer layer 22 is grown on the substrate 21, and the n-AlGaInN layer 23 is grown, followed by Al (x) Ga (y) In (z) N / Al (x1) Ga (y1) In (z1). Grow a multi-layered active layer of N (24), grow p-AlGaInN (25), and grow n-type Al (x) Ga (y) In (z) N (26), After forming the p-electrode 27 as a front electrode and forming the protective film 28, the n-electrode 29 is configured as shown.
도 2의 하부에는 본 발명에 의해 제작된 LED와 p-n diode가 전기적 배선 작업이 완료된 후의 등가 회로로서 LED와 p-n diode가 서로 병렬로 연결되어 있고 극성은 서로 반대로 연결되어 있다.In the lower part of FIG. 2, the LED and the p-n diode manufactured by the present invention are equivalent circuits after the electrical wiring work is completed, and the LED and the p-n diode are connected in parallel with each other and the polarities thereof are connected to each other in opposite directions.
단면도인 도 2는 평면도인 도 3의 1점쇄선을 따라서 단면을 그린 것이다. 도3에서 보이듯이 LED의 우측 하변에 굵은 점선으로 표시한 것이 최상층의 n형 AlGaInN(31)를 나타내고 이 부분이 역방향 ESD 전압을 향상시키기 위해 집적된 p-n diode의 n-형 반도체이다. 또한 도 3에서 이점 쇄선으로 표시된 부분이 p-형 투명전극(32)이고 가는 실선으로 표시된 부분이 p-GaN을 식각하고 남는 부분(33)이고 굵은 실선으로 표시된 부분은 절연성 보호막이 증착된 후 개구부가 형성되는 부분(34)이고 가는 점선은 본딩을 위한 pad, n-ohmic 전극 및 전기적 연결을 위한 금속 pattern(35)이다.FIG. 2, which is a sectional view, is a section taken along the dashed-dotted line of FIG. 3, which is a plan view. As shown in Fig. 3, a thick dotted line on the lower right side of the LED represents the uppermost n-type AlGaInN 31, which is the n-type semiconductor of the p-n diode integrated to improve the reverse ESD voltage. In addition, in FIG. 3, the portion indicated by the dashed-dotted line is the p-type transparent electrode 32, the portion indicated by the thin solid line is the portion remaining after etching p-GaN, and the portion indicated by the thick solid line is the opening after the insulating protective film is deposited. Is a portion 34 and a thin dotted line is a pad for bonding, an n-ohmic electrode and a metal pattern 35 for electrical connection.
첨부된 도면 도 4는 본 발명에 의한 LED의 제조 순서의 예를 보인 것이다. 도 4-(a)는 본 발명에 있어서 단결정 성장된 LED의 결정 성장층을 보인 것으로 기판(41) 위에 적절한 완충층 (42) 을 성장시키고, n-AlGaInN층(43)을 성장시킨 후 Al(x)Ga(y)In(z)N/ Al(x1)Ga(y1)In(z1)N(44)의 다층 활성층을 성장 시키고, 그 위에 p- AlGaInN(45)를 성장시킨 후 n형 Al(x)Ga(y)In(z)N(46)을 성장시킨다. 도 4-(b)는 일부의 n형 AlGaInN(46)를 남기고 나머지 부분을 식각한 후의 단면도이다. 도 4-(c)는 표면에 드러난 p-GaN 상에 p-형 투명 전극을 형성한 후의 단면도이다. 도 4-(d)는 p-GaN의 일부, 활성층의 일부 및 하층의 n-GaN의 일부를 식각 한 후의 단면도이다. 도 4-(e)는 절연성의 보호막을 형성한 형성하고 전극이 형성될 부분에 개구부를 형성한 후의 단면도이다. 도 4-(f)는 n-ohmic 전극, 본딩 pad 및 전기적 연결을 위한 배선을 형성한 후의 단면도이다.4 is a view illustrating an example of a manufacturing sequence of the LED according to the present invention. 4- (a) shows a crystal growth layer of a single crystal grown LED in the present invention. After growing the appropriate buffer layer 42 on the substrate 41 and growing the n-AlGaInN layer 43, Al (x) A multi-layered active layer of Ga (y) In (z) N / Al (x1) Ga (y1) In (z1) N (44) is grown, and p-AlGaInN (45) is grown thereon, followed by n-type Al ( x) Ga (y) In (z) N (46) is grown. Fig. 4- (b) is a cross-sectional view after etching a portion leaving some n-type AlGaInN 46 left. Fig. 4- (c) is a cross-sectional view after the p-type transparent electrode is formed on the p-GaN exposed on the surface. Fig. 4- (d) is a sectional view after etching a part of p-GaN, part of an active layer, and part of n-GaN of a lower layer. Fig. 4-E is a cross sectional view after the insulating protective film is formed and the opening is formed in the portion where the electrode is to be formed. Fig. 4- (f) is a cross-sectional view after the n-ohmic electrode, the bonding pad, and the wiring for electrical connection are formed.
본 발명은 역방향 ESD 전압이 낮은 AlGaInN계 LED 소자에 p-n diode를 역방향으로 집적하여 역방향 ESD 전압 성능을 획기적으로 개선하여 AlGaInN계 LED 소자의 신뢰성을 대폭 향상시킬 수 있다. AlGaInN계 LED용 단결정 성장 중에 기존 LED의 상층부인 p-GaN 상에 n-형 AlGaInN 층을 성장함으써 결정 성장이 용이하고 공정상에 있어서도 최상층의 n형 AlGaInN 층을 식각하는 공정만 추가되므로 매우 간단한 공정으로 LED의 역방향 ESD 성능을 향상시키는 p-n diode를 집적할 수 있다.The present invention can significantly improve the reverse ESD voltage performance by integrating the p-n diode in the reverse direction to the AlGaInN-based LED device with a low reverse ESD voltage can significantly improve the reliability of the AlGaInN-based LED device. During the single crystal growth of AlGaInN-based LED, by growing n-type AlGaInN layer on p-GaN, which is the upper part of existing LED, crystal growth is easy and only the process of etching the top n-type AlGaInN layer is added. The process allows the integration of pn diodes that improve the reverse ESD performance of LEDs.
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