JPH11150303A - Light emitting parts - Google Patents
Light emitting partsInfo
- Publication number
- JPH11150303A JPH11150303A JP33108397A JP33108397A JPH11150303A JP H11150303 A JPH11150303 A JP H11150303A JP 33108397 A JP33108397 A JP 33108397A JP 33108397 A JP33108397 A JP 33108397A JP H11150303 A JPH11150303 A JP H11150303A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- gan
- electrode
- layer
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は発光部品に関し、
特にたとえば３族窒化物半導体発光素子を用いる発光部
品に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting component,
In particular, it relates to a light emitting component using, for example, a group III nitride semiconductor light emitting device.
【０００２】[0002]
【従来の技術】図９に示すように、従来のＧａＮ系発光
素子１としては、１つの絶縁性基板２上に、１つの透光
性電極３、およびアノード電極４とカソード電極５とか
らなる一対のボンディング用のパッド電極が形成され
た、すなわち１つのチップに対して１ヶ所の発光部を有
する、発光ダイオードが広く用いられてきた。2. Description of the Related Art As shown in FIG. 9, a conventional GaN-based light emitting device 1 includes one transmissive electrode 3, an anode electrode 4 and a cathode electrode 5 on one insulating substrate 2. Light emitting diodes having a pair of bonding pad electrodes formed thereon, that is, having one light emitting portion for one chip, have been widely used.
【０００３】[0003]
【発明が解決しようとする課題】従来のＧａＮ系発光素
子１は発光部を１ヶ所しか有さないので、それ単独では
面光源としては適さなかった。Since the conventional GaN-based light-emitting device 1 has only one light-emitting portion, it is not suitable as a surface light source by itself.
【０００４】また、ＧａＮ系発光素子１では１つの絶縁
性基板２上に１つの素子しか形成されないため、大面積
の面光源を得ようとすると、複数のＧａＮ系発光素子１
を基体上に配列して互いに接続する必要があるので相互
に隣接するＧａＮ系発光素子１の間隔に限界があり、大
きな発光強度を有する面光源を得られないという問題点
があった。[0004] Further, since only one element is formed on one insulating substrate 2 in the GaN-based light-emitting element 1, a plurality of GaN-based light-emitting elements 1 are required to obtain a large-area surface light source.
Need to be arranged on a substrate and connected to each other, so that there is a limit to the distance between the GaN-based light emitting elements 1 adjacent to each other, and there is a problem that a surface light source having a large luminous intensity cannot be obtained.
【０００５】それゆえにこの発明の主たる目的は、単一
の部品として形成されかつ大きな発光強度を有する面光
源として適する、発光部品を提供することである。[0005] It is, therefore, a primary object of the present invention to provide a light emitting component which is formed as a single component and which is suitable as a surface light source having a high luminous intensity.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に記載の発光部品は、基板、および基板上
にそれぞれ形成されかつ接続される複数の３族窒化物半
導体発光素子を備える。According to a first aspect of the present invention, there is provided a light emitting component comprising: a substrate; and a plurality of group III nitride semiconductor light emitting devices formed and connected to the substrate. Prepare.
【０００７】請求項２に記載の発光部品は、請求項１に
記載の発光部品において、複数の３族窒化物半導体発光
素子は直列に接続されるものである。According to a second aspect of the present invention, in the light emitting component according to the first aspect, a plurality of group III nitride semiconductor light emitting devices are connected in series.
【０００８】請求項３に記載の発光部品は、請求項１ま
たは２に記載の発光部品において、各３族窒化物半導体
発光素子は、基板上に形成される第１導電型の半導体
層、第１導電型の半導体層上の一端縁近傍かつ幅方向に
延びて形成される第１導電型側電極、第１導電性の半導
体層上に形成される第２導電型の半導体層、および第２
導電型の半導体層上に面状に形成される第２導電型側電
極を含み、各３族窒化物半導体発光素子は直線状に配列
され、かつ相互に隣接する３族窒化物半導体発光素子の
一方の発光素子の第１導電型側電極と他方の発光素子の
第２導電型側電極とは幅を有する内部配線によって接続
されるものである。According to a third aspect of the present invention, in the light emitting component according to the first or second aspect, each of the group III nitride semiconductor light emitting elements includes a first conductive type semiconductor layer formed on a substrate, A first-conductivity-type-side electrode formed near one end of the one-conductivity-type semiconductor layer and extending in the width direction; a second-conductivity-type semiconductor layer formed on the first-conductivity-type semiconductor layer;
Each of the group III nitride semiconductor light emitting devices includes a second conductivity type side electrode formed in a planar shape on a conductive type semiconductor layer, and each group III nitride semiconductor light emitting device is linearly arranged and adjacent to each other. The first conductivity type side electrode of one light emitting element and the second conductivity type side electrode of the other light emitting element are connected by an internal wiring having a width.
【０００９】請求項４に記載の発光部品は、請求項３に
記載の発光部品において、第１導電型の半導体層の抵抗
をＲ１、第２導電型側電極の抵抗をＲ２とすると、Ｒ１
≒Ｒ２に設定されるものである。According to a fourth aspect of the present invention, in the light emitting component according to the third aspect, the resistance of the semiconductor layer of the first conductivity type is R1, and the resistance of the second conductivity type side electrode is R2.
$ R2 is set.
【００１０】請求項５に記載の発光部品は、請求項３ま
たは４に記載の発光部品において、第２導電型側電極は
透光性電極を含むものである。According to a fifth aspect of the present invention, in the light emitting component according to the third or fourth aspect, the second conductivity type side electrode includes a light transmitting electrode.
【００１１】請求項６に記載の発光部品は、請求項１な
いし５のいずれかに記載の発光部品において、３族窒化
物半導体発光素子の数は駆動電圧に応じて決定されるも
のである。According to a sixth aspect of the present invention, in the light emitting component according to any one of the first to fifth aspects, the number of group III nitride semiconductor light emitting elements is determined according to a driving voltage.
【００１２】請求項７に記載の発光部品は、請求項１な
いし６のいずれかに記載の発光部品において、３族窒化
物半導体発光素子はＧａＮ系発光素子を含むものであ
る。A light emitting component according to a seventh aspect is the light emitting component according to any one of the first to sixth aspects, wherein the group III nitride semiconductor light emitting device includes a GaN-based light emitting device.
【００１３】請求項１に記載の発光部品では、一般のＩ
Ｃ製造プロセスを用いて１枚の基板上に複数の３族窒化
物半導体発光素子が形成されかつ接続されるので、相互
に隣接する３族窒化物半導体発光素子の間隔を従来より
も狭くできる。したがって、単一の部品として形成され
かつ発光強度が大きい面光源が得られる。In the light emitting component according to the first aspect, a general I
Since a plurality of group III nitride semiconductor light emitting devices are formed and connected on one substrate using the C manufacturing process, the distance between the group III nitride semiconductor light emitting devices adjacent to each other can be narrower than before. Therefore, a surface light source which is formed as a single component and has a high luminous intensity can be obtained.
【００１４】請求項２に記載するように、複数の３族窒
化物半導体発光素子が直列に接続されると、各３族窒化
物半導体発光素子からの発光量が等しくされる。When a plurality of group III nitride semiconductor light emitting devices are connected in series, the amount of light emitted from each group III nitride semiconductor light emitting device is equalized.
【００１５】請求項３に記載するように、各３族窒化物
半導体発光素子は直線状に配列され、かつ相互に隣接す
る３族窒化物半導体発光素子の一方の発光素子の第１導
電型側電極と他方の発光素子の第２導電型側電極とが幅
を有する内部配線によって接続されると、個々の３族窒
化物半導体発光素子における発光強度分布はより均一化
される。請求項４に記載するように、（第１導電型の半
導体層の抵抗Ｒ１）≒（第２導電型側電極の抵抗Ｒ２）
に設定されると、個々の３族窒化物半導体発光素子にお
ける発光強度分布は略均一化される。According to a third aspect of the present invention, each of the group III nitride semiconductor light emitting devices is arranged in a straight line, and the first conductivity type side of one of the group III nitride semiconductor light emitting devices adjacent to each other. When the electrode and the second-conductivity-type-side electrode of the other light-emitting element are connected by an internal wiring having a width, the emission intensity distribution in each group III nitride semiconductor light-emitting element becomes more uniform. As described in claim 4, (the resistance R1 of the semiconductor layer of the first conductivity type) ≒ (the resistance R2 of the side electrode of the second conductivity type)
Is set, the luminous intensity distribution in each group III nitride semiconductor light emitting device is made substantially uniform.
【００１６】また、請求項６に記載するように、３族窒
化物半導体発光素子の数が、発光部品が用いられる装置
の駆動電圧に適合するように設定されると、さまざまな
駆動電圧に適用可能な発光部品が得られる。なお、請求
項５に記載するように、第２導電型側電極は透光性電極
によって形成され、請求項７に記載するように、３族窒
化物半導体発光素子としてはたとえばＧａＮ系発光素子
が用いられる。Further, when the number of the group III nitride semiconductor light emitting devices is set to be suitable for the driving voltage of the device using the light emitting component, the present invention can be applied to various driving voltages. A possible light emitting component is obtained. In addition, as described in claim 5, the second conductivity type side electrode is formed by a translucent electrode. As described in claim 7, for example, a GaN-based light emitting element is used as the group III nitride semiconductor light emitting element. Used.
【００１７】[0017]
【発明の実施の形態】以下、この発明の実施の形態につ
いて、図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１８】図１および図２を参照して、この発明の実
施の形態の発光部品１０は、たとえばサファイア基板等
などの絶縁性基板１２を含み、絶縁性基板１２上に４個
のＧａＮ（少なくともＧａ、Ｎを含む半導体）系発光ダ
イオード１４ａ〜１４ｄが形成されるものである。Referring to FIGS. 1 and 2, a light emitting component 10 according to an embodiment of the present invention includes an insulating substrate 12 such as a sapphire substrate or the like. The semiconductor light emitting diodes 14a to 14d containing Ga and N are formed.
【００１９】すなわち、絶縁性基板１２上には、各Ｇａ
Ｎ系発光ダイオード１４ａ〜１４ｄに対応して、層厚
３．０μｍの電極設置層となるｎ型ＧａＮ層（Ｓｉドー
プ）１６、層厚０．１μｍの発光層１８、および層厚
０．５μｍのｐ型ＧａＮコンタクト層（Ｍｇドープ）２
０が、この順序で形成される。That is, each Ga is placed on the insulating substrate 12.
Corresponding to the N-based light emitting diodes 14a to 14d, an n-type GaN layer (Si-doped) 16 serving as an electrode installation layer having a layer thickness of 3.0 μm, a light emitting layer 18 having a layer thickness of 0.1 μm, and a light emitting layer 18 having a layer thickness of 0.5 μm are provided. p-type GaN contact layer (Mg doped) 2
0s are formed in this order.
【００２０】また、各ｐ型ＧａＮコンタクト層２０上に
はｐ型側電極である透光性電極２２が面状に形成され、
各ｎ型ＧａＮ層１６上の一端縁近傍かつ幅方向にはｎ型
側電極２４が形成される。図１からよくわかるように、
透光性電極２２とｎ型側電極２４とは平行に形成され
る。On each p-type GaN contact layer 20, a light-transmitting electrode 22, which is a p-type side electrode, is formed in a plane.
An n-type side electrode 24 is formed near one end of each n-type GaN layer 16 and in the width direction. As can be clearly seen from FIG.
The translucent electrode 22 and the n-type side electrode 24 are formed in parallel.
【００２１】そして、絶縁性基板１２上の各部材は保護
膜２６によって覆われ、隣接するＧａＮ系発光ダイオー
ド間の透光性電極２２とｎ型側電極２４とは所定の幅Ｗ
１を有する内部配線２８によって直列接続される。この
とき、内部配線２８の一端は透光性電極２２上の一端縁
近傍かつ幅方向に延びて形成される。したがって、１つ
のＧａＮ系発光ダイオードに関していえば、内部配線２
８と透光性電極２２との接続箇所は、ｎ型側電極２４の
形成箇所とは反対側の端縁近傍となる。なお、図１から
わかるように、内部配線２８の幅Ｗ１の寸法は、たとえ
ば、透光性電極２２の幅Ｗ２よりやや小さくかつｎ型側
電極２４の長さＬよりやや大きくなるように設定され
る。Each member on the insulating substrate 12 is covered with a protective film 26, and the transparent electrode 22 and the n-type electrode 24 between the adjacent GaN-based light emitting diodes have a predetermined width W.
They are connected in series by an internal wiring 28 having a “1”. At this time, one end of the internal wiring 28 is formed near one end edge on the light transmitting electrode 22 and extends in the width direction. Therefore, regarding one GaN-based light emitting diode, the internal wiring 2
The connection point between the light-transmitting electrode 8 and the light-transmitting electrode 22 is near the edge on the opposite side to the position where the n-type electrode 24 is formed. 1, the width W1 of the internal wiring 28 is set to be slightly smaller than the width W2 of the translucent electrode 22 and slightly larger than the length L of the n-side electrode 24, for example. You.
【００２２】さらに、両端の透光性電極２２およびｎ型
側電極２４には、それぞれ外部の部品と接続するための
パッド電極３０が接続される。パッド電極３０も内部電
極２８と同様に形成される。Further, a pad electrode 30 for connecting to an external component is connected to the translucent electrode 22 and the n-type electrode 24 at both ends. The pad electrode 30 is also formed in the same manner as the internal electrode 28.
【００２３】このように、内部配線２８を介して透光性
電極２２とｎ型側電極２４とを接続することによって、
４個のＧａＮ系発光ダイオード１４ａ〜１４ｄを直列接
続した発光部品１０が得られる。発光部品１０の等価回
路が図３に示される。As described above, by connecting the translucent electrode 22 and the n-side electrode 24 via the internal wiring 28,
The light emitting component 10 in which four GaN-based light emitting diodes 14a to 14d are connected in series is obtained. FIG. 3 shows an equivalent circuit of the light emitting component 10.
【００２４】このような発光部品１０の製造方法の一例
を、図４を参照して説明する。An example of a method for manufacturing such a light emitting component 10 will be described with reference to FIG.
【００２５】まず、図４（ａ）に示すように、絶縁性基
板１２上に、ｎ型ＧａＮ層１６、発光層１８およびｐ型
ＧａＮコンタクト層２０をＭＯＣＶＤ（有機金属化学気
相成長法）によってこの順序でエピタキシャル成長さ
せ、膜厚３．０μｍ、ＮD＝１０18ｃｍー3のｎ型ＧａＮ
層１６、膜厚０．１μｍの発光層１８、および膜厚０．
５μｍ、ＮA＝１０17ｃｍー3のｐ型ＧａＮコンタクト層
２０が形成される。First, as shown in FIG. 4A, an n-type GaN layer 16, a light-emitting layer 18 and a p-type GaN contact layer 20 are formed on an insulating substrate 12 by MOCVD (metal organic chemical vapor deposition). N-type GaN having a thickness of 3.0 μm and N D = 10 18 cm −3 is epitaxially grown in this order.
A layer 16, a light-emitting layer 18 having a thickness of 0.1 μm,
A p-type GaN contact layer 20 of 5 μm and N A = 10 17 cm −3 is formed.
【００２６】ついで、図４（ｂ）に示すように、Ｎｉマ
スクによるフォトリソグラフィーおよび塩素ガスを０．
５Ｐａの圧力で供給するドライエッチング法によって、
絶縁性基板１２上のｐ型ＧａＮコンタクト層２０、発光
層１８およびｎ型ＧａＮ層１６がエッチング除去され、
メサ２１が形成される。このときのエッチングの深さは
０．８μｍである。Next, as shown in FIG. 4 (b), photolithography using a Ni mask and chlorine gas to a concentration of 0.
By dry etching method supplying at a pressure of 5 Pa,
The p-type GaN contact layer 20, the light-emitting layer 18, and the n-type GaN layer 16 on the insulating substrate 12 are removed by etching,
A mesa 21 is formed. At this time, the etching depth is 0.8 μm.
【００２７】さらに、図４（ｃ）に示すように、Ｎｉマ
スクによるフォトリソグラフィーおよび塩素ガスを０．
５Ｐａの圧力で供給するドライエッチング法によって、
絶縁性基板１２上のｎ型ＧａＮ層１６がエッチング除去
され、絶縁性基板１２が露出するように凹部３２が形成
される。これによって、エッチングの深さは３．６μｍ
となり、ＧａＮ系発光ダイオード１４ａ〜１４ｄを構成
する層がそれぞれ分離される。Further, as shown in FIG. 4 (c), photolithography using a Ni mask and chlorine gas to a concentration of 0.
By dry etching method supplying at a pressure of 5 Pa,
The n-type GaN layer 16 on the insulating substrate 12 is removed by etching, and a concave portion 32 is formed so that the insulating substrate 12 is exposed. Thereby, the etching depth is 3.6 μm.
And the layers constituting the GaN-based light emitting diodes 14a to 14d are separated from each other.
【００２８】つづいて、図４（ｄ）に示すように、２×
１０ー6ｔｏｒｒの圧力による電子ビーム蒸着によって、
ｐ型ＧａＮコンタクト層２０上面全体に、膜厚２ｎｍの
Ｎｉ膜および膜厚４ｎｍのＡｕ膜がこの順序で成膜さ
れ、フォトリソグラフィーによって面状の透光性電極２
２が形成される。また、２×１０ー6ｔｏｒｒの圧力によ
る電子ビーム蒸着によって、ｎ型ＧａＮ層１６上に、膜
厚３０ｎｍのＴｉ膜および膜厚５００ｎｍのＡｌ膜がこ
の順序で成膜され、フォトリソグラフィーによってｎ型
ＧａＮ層１６上の一端縁近傍かつ幅方向に延びたｎ型側
電極２４が形成される。ｎ型側電極２４はＧａＮ系発光
ダイオードのカソード電極に相当する。Subsequently, as shown in FIG.
By electron beam evaporation by the pressure of 10 @ 6 torr,
A 2 nm-thick Ni film and a 4 nm-thick Au film are formed in this order on the entire upper surface of the p-type GaN contact layer 20, and the planar light-transmitting electrode 2 is formed by photolithography.
2 are formed. Further, by electron beam evaporation by the pressure of 2 × 10 over 6 torr, on the n-type GaN layer 16, Al film of Ti film and the thickness 500nm of thickness 30nm is deposited in this order, n-type by photolithography An n-side electrode 24 is formed on the GaN layer 16 near one end and extending in the width direction. The n-side electrode 24 corresponds to a cathode electrode of a GaN-based light emitting diode.
【００２９】その後、図４（ｅ）に示すように、図４
（ｄ）で形成されたチップの上面全体に膜厚３００ｎｍ
のＳｉＯ2からなる保護膜２６が電子ビーム蒸着によっ
て形成される。Thereafter, as shown in FIG.
A film thickness of 300 nm on the entire top surface of the chip formed in (d)
Protective film 26 made of SiO 2 is formed by electron beam evaporation.
【００３０】その後、透光性電極２２およびｎ型側電極
２４のそれぞれの上面の一部が露出するように、フォト
リソグラフィーによって保護膜２６がエッチング除去さ
れて開口される。このとき、１つのＧａＮ系発光ダイオ
ードに関していえば、透光性電極２２上の開口はｎ型側
電極２４の形成箇所とは反対側の端縁近傍かつ幅方向に
延びて形成される。また、ｎ型側電極２４の開口も幅方
向に延びて形成される。Thereafter, the protective film 26 is etched and removed by photolithography so that an opening is formed so that a part of the upper surface of each of the translucent electrode 22 and the n-side electrode 24 is exposed. At this time, regarding one GaN-based light emitting diode, the opening on the translucent electrode 22 is formed near the end edge opposite to the location where the n-type electrode 24 is formed and extends in the width direction. The opening of the n-type electrode 24 is also formed to extend in the width direction.
【００３１】そして、図４（ｆ）に示すように、２×１
０ー6ｔｏｒｒの圧力による電子ビーム蒸着によって、保
護膜２６の上面全体に膜厚１００ｎｍのＮｉ膜および膜
厚７００ｎｍのＡｕ膜がこの順序で成膜され、フォトリ
ソグラフィーによって内部配線２８が形成される。した
がって、１つのＧａＮ系発光ダイオードに関していえ
ば、透光性電極２２に接続される内部配線２８およびｎ
型側電極２４に接続される内部配線２８は、ＧａＮ系発
光ダイオードの両端からそれぞれ反対方向に引き出され
ることになる。なお、図４（ｆ）には図示しないが、パ
ッド電極３０も同様にして同時に形成される。内部配線
２８およびパッド電極３０のうち、透光性電極２２と接
続される一端部が、ＧａＮ系発光ダイオードのアノード
電極に相当する。Then, as shown in FIG.
By electron beam evaporation by pressure 0 over 6 torr, Au film of Ni film and the thickness 700nm of thickness 100nm on the entire upper surface of the protective film 26 is deposited in this order, the internal wiring 28 is formed by photolithography . Therefore, regarding one GaN-based light emitting diode, the internal wiring 28 connected to the translucent electrode 22 and n
The internal wiring 28 connected to the mold-side electrode 24 is drawn in opposite directions from both ends of the GaN-based light emitting diode. Although not shown in FIG. 4F, the pad electrode 30 is formed simultaneously in the same manner. One end of the internal wiring 28 and the pad electrode 30 connected to the translucent electrode 22 corresponds to the anode electrode of the GaN-based light emitting diode.
【００３２】このようにして、４個のＧａＮ系発光ダイ
オード１４ａ〜１４ｄが直列接続された発光部品１０が
形成される。Thus, the light emitting component 10 in which the four GaN light emitting diodes 14a to 14d are connected in series is formed.
【００３３】発光強度１０によれば、一般のＩＣ製造プ
ロセスを用いて１枚の絶縁性基板１２上に複数のＧａＮ
系発光ダイオード１４ａ〜１４ｄが形成されかつ接続さ
れるので、相互に隣接するＧａＮ系発光ダイオードの間
隔を従来よりも狭くできる。したがって、単一の部品と
して形成されかつ発光強度が大きい面光源として適する
発光部品１０が得られる。According to the light emission intensity 10, a plurality of GaN layers are formed on one insulating substrate 12 using a general IC manufacturing process.
Since the system light emitting diodes 14a to 14d are formed and connected to each other, the distance between the GaN light emitting diodes adjacent to each other can be narrower than before. Therefore, the light emitting component 10 which is formed as a single component and is suitable as a surface light source having a high luminous intensity is obtained.
【００３４】また、発光部品１０によれば、図５（ａ）
にも示すように、絶縁性基板１２上にＧａＮ系発光ダイ
オード１４ａ〜１４ｄを直線状に形成することができる
ので、図５（ｂ）からわかるように、大面積の発光が得
られる。According to the light emitting component 10, FIG.
As shown in FIG. 5, since the GaN-based light emitting diodes 14a to 14d can be formed linearly on the insulating substrate 12, light emission of a large area can be obtained as can be seen from FIG.
【００３５】また、同一の絶縁性基板１２上にＧａＮ系
発光ダイオード１４ａ〜１４ｄを形成できるので、Ｇａ
Ｎ系発光ダイオード１４ａ〜１４ｄ間の絶縁分離、集積
化が容易になる。Since the GaN-based light emitting diodes 14a to 14d can be formed on the same insulating substrate 12,
Insulation separation and integration between the N-based light emitting diodes 14a to 14d are facilitated.
【００３６】各ＧａＮ系発光ダイオード１４ａ〜１４ｄ
の発光強度分布は図６に示すようになる。透光性電極２
２の抵抗をＲｔ、ｎ型ＧａＮ層１６の抵抗をＲｎとし、
Ｒｐは、ｐ型ＧａＮコンタクト層２０の抵抗、透光性電
極２２とｐ型ＧａＮコンタクト層２０との接触抵抗およ
びｐ−ｎ接合電圧相当抵抗分を示し、各抵抗は面内にお
いて一定と考えるとする。Each GaN-based light emitting diode 14a to 14d
Is as shown in FIG. Translucent electrode 2
2 is Rt, the resistance of the n-type GaN layer 16 is Rn,
Rp indicates the resistance of the p-type GaN contact layer 20, the contact resistance between the translucent electrode 22 and the p-type GaN contact layer 20, and the resistance equivalent to the pn junction voltage. Each resistance is considered to be constant in the plane. I do.
【００３７】各ＧａＮ系発光ダイオード１４ａ〜１４ｄ
は直線状に配列され、かつ相互に隣接するＧａＮ系発光
ダイオードの一方の発光ダイオードのｎ型側電極２４と
他方の発光ダイオードの透光性電極２２とが幅Ｗ１を有
する内部配線２８によって接続されているので、透光性
電極２２の単位面積当たりの抵抗が小さい場合（Ｒｔ≒
Ｒｎ）には、図６（ａ）に示すように、透光性電極２２
全面からｎ型ＧａＮ層１６に電流が流れ、発光層１８を
通過する電流は発光層１８内の位置に拘わらず均一にな
る。したがって、図６（ｂ）および（ｃ）に示すよう
に、透光性電極２２からの発光は発光箇所に拘わらず略
均一になり、かつより大きな発光強度が得られる。Each of the GaN-based light emitting diodes 14a to 14d
Are linearly arranged, and the n-side electrode 24 of one of the GaN-based light-emitting diodes adjacent to each other and the light-transmitting electrode 22 of the other light-emitting diode are connected by an internal wiring 28 having a width W1. Therefore, when the resistance per unit area of the translucent electrode 22 is small (Rt ≒
Rn) includes, as shown in FIG.
A current flows from the entire surface to the n-type GaN layer 16, and the current passing through the light emitting layer 18 becomes uniform regardless of the position in the light emitting layer 18. Therefore, as shown in FIGS. 6B and 6C, the light emission from the translucent electrode 22 is substantially uniform regardless of the light emission location, and a higher light emission intensity is obtained.
【００３８】因みに、透光性電極２２の単位面積当たり
の抵抗が大きい場合（Ｒｔ＞Ｒｎ）には、図６（ｄ）に
示すように、発光層１８を通過する電流は内部配線２８
すなわちアノード電極近傍に集中する。この場合、図６
（ｅ）に示すＸーＸ断面における発光強度は不均一にな
るが、各ＧａＮ系発光ダイオード１４ａ〜１４ｄは直線
状に配列され、かつ相互に隣接するＧａＮ系発光ダイオ
ードの一方の発光ダイオードのｎ型側電極２４と他方の
発光ダイオードの透光性電極２２とが幅Ｗ１を有する内
部配線２８によって接続されているので、図６（ｆ）に
示すＹーＹ断面における発光強度は略均一になる。した
がって、上述した透光性電極２２の単位面積当たりの抵
抗が小さい場合より発光強度は不均一かつ小さくなる
が、少なくとも図９に示す従来技術より発光強度は均一
化されかつ大きくなる。Incidentally, when the resistance per unit area of the translucent electrode 22 is large (Rt> Rn), as shown in FIG.
That is, it is concentrated near the anode electrode. In this case, FIG.
Although the light emission intensity in the XX cross section shown in (e) becomes non-uniform, each of the GaN-based light-emitting diodes 14a to 14d is linearly arranged and n of one of the GaN-based light-emitting diodes adjacent to each other is n. Since the mold side electrode 24 and the translucent electrode 22 of the other light emitting diode are connected by the internal wiring 28 having the width W1, the light emission intensity in the YY cross section shown in FIG. . Therefore, the light emission intensity is non-uniform and small as compared with the case where the resistance per unit area of the light-transmitting electrode 22 is small, but the light emission intensity is uniform and large at least as compared with the prior art shown in FIG.
【００３９】さらに、図７（ａ）〜（ｃ）に示すよう
に、絶縁性基板１２ａ上にＧａＮ系発光ダイオード１４
ａ〜１４ｄを形成しコ字状に直列接続してもよく、この
場合にも、単一の部品として形成されかつ大きな発光強
度が得られ面光源として適する発光部品が得られる。Further, as shown in FIGS. 7A to 7C, a GaN-based light emitting diode 14 is placed on an insulating substrate 12a.
a to 14d may be formed and connected in series in a U-shape. Also in this case, a light-emitting component which is formed as a single component and has high emission intensity and is suitable as a surface light source is obtained.
【００４０】すなわち、図５および図７からわかるよう
に、絶縁性基板上に複数個のＧａＮ系発光ダイオードを
形成し直列接続することによって、単一の部品として形
成されかつ大きな発光強度が得られ面光源に応用できる
発光部品が得られる。That is, as can be seen from FIGS. 5 and 7, by forming a plurality of GaN-based light emitting diodes on an insulating substrate and connecting them in series, it is possible to form a single component and obtain a large light emission intensity. A light emitting component applicable to a surface light source is obtained.
【００４１】なお、ＧａＮ系発光ダイオードを駆動する
には、３Ｖ以上必要であり、５Ｖ電源を用いて回路動作
を行うことが多い。１つのＧａＮ系発光ダイオードあた
り４Ｖ（たとえば２０ｍＡの電流を流す場合）程度必要
とすると、駆動電圧が２４Ｖの場合には６つのＧａＮ系
発光ダイオードが直列接続された発光部品を用いればよ
い。このように、駆動電圧に応じた直列素子数のＧａＮ
系発光ダイオードを用いることによって、大面積の発光
が可能となり、かつ駆動電圧の制限も少なくなり、多方
面にわたる応用が期待できる。In order to drive a GaN-based light emitting diode, 3 V or more is required, and circuit operation is often performed using a 5 V power supply. When about 4 V is required per GaN-based light emitting diode (for example, when a current of 20 mA flows), when the driving voltage is 24 V, a light emitting component in which six GaN-based light emitting diodes are connected in series may be used. Thus, the number of GaN elements in series according to the drive voltage
By using a system light emitting diode, light emission of a large area becomes possible and the limitation of the driving voltage is reduced, so that application to various fields can be expected.
【００４２】また、図８に示すように、ＧａＮ系発光ダ
イオード１４ａ〜１４ｎとともに抵抗（図８（ａ））や
ＦＥＴ（図８（ｂ））などの電流制御素子が同一絶縁性
基板上に形成されてもよく、この場合、ＧａＮ系発光ダ
イオード１４ａ〜１４ｎと電流制御素子とを同一の絶縁
性基板上にモノリシックに形成できる。As shown in FIG. 8, current control elements such as resistors (FIG. 8A) and FETs (FIG. 8B) are formed on the same insulating substrate together with the GaN-based light emitting diodes 14a to 14n. In this case, the GaN-based light emitting diodes 14a to 14n and the current control element can be formed monolithically on the same insulating substrate.
【００４３】このように外付け素子が不要になるため、
小型かつ軽量の発光部品１０が得られ、また、ＧａＮ系
発光ダイオード１４ａ〜１４ｄだけではなく電流制御素
子をもワイドギャップバンド材料によって形成できるの
で、発熱に対して強い発光部品１０が得られ、集積化が
容易となる。さらに、絶縁性基板の一方主面にのみ素子
を構成するので、この場合にも一般的なＩＣ製造プロセ
スを適用できる。また、ＧａＮ系発光ダイオードの数を
調整するだけではなく電流制御素子を付加することによ
り、駆動電圧の制限がさらに少なくなる。さらに、Ｇａ
Ｎ系発光ダイオード１４ａ〜１４ｎに抵抗を付加するこ
とによって、組立時や使用時におけるサージ電流を抑制
することができる。Since no external element is required,
The light-emitting component 10 that is small and light is obtained, and the current control element as well as the GaN-based light-emitting diodes 14a to 14d can be formed of a wide gap band material. It becomes easy. Furthermore, since elements are formed only on one main surface of the insulating substrate, a general IC manufacturing process can be applied in this case as well. Further, by adding a current control element as well as adjusting the number of GaN-based light emitting diodes, the limitation of the driving voltage is further reduced. Further, Ga
By adding a resistor to the N-based light emitting diodes 14a to 14n, a surge current during assembly or use can be suppressed.
【００４４】図１の実施の形態では、４個のＧａＮ系発
光ダイオード１４ａ〜１４ｄを直列接続する場合につい
て述べたが、ＧａＮ系発光ダイオードの数はこれに限定
されないことはいうまでもない。In the embodiment of FIG. 1, a case has been described in which four GaN-based light emitting diodes 14a to 14d are connected in series. However, it is needless to say that the number of GaN-based light emitting diodes is not limited to this.
【００４５】また、上述の実施の形態では、発光素子と
して発光ダイオードを例に説明したが、これに限定され
ず、レーザであってもよい。In the above-described embodiment, a light emitting diode is described as an example of a light emitting element. However, the present invention is not limited to this, and a laser may be used.
【００４６】さらに、発光部品１０の３族窒化物半導体
発光素子としては、たとえばＡｌＮ、ＩｎＮ、ＢＮまた
はＩｎＧａＮなどを含む３族窒化物半導体からなる発光
素子であれば、任意の３族窒化物半導体発光素子を用い
ることができる。Further, the group III nitride semiconductor light emitting element of the light emitting component 10 may be any group III nitride semiconductor as long as the element is a group III nitride semiconductor including AlN, InN, BN or InGaN. A light-emitting element can be used.
【００４７】[0047]
【発明の効果】この発明によれば、１つの基板上に発光
部を複数形成でき、単一の部品として形成されかつ大き
な発光強度が得られ面光源として適する発光部品が得ら
れる。According to the present invention, a plurality of light-emitting portions can be formed on one substrate, and a light-emitting component which is formed as a single component, has a high light emission intensity, and is suitable as a surface light source can be obtained.
【図１】この発明の一実施形態の主要部を示す平面図で
ある。FIG. 1 is a plan view showing a main part of an embodiment of the present invention.
【図２】図１の実施形態を示す断面図である。FIG. 2 is a sectional view showing the embodiment of FIG.
【図３】図１の実施形態を示す等価回路図である。FIG. 3 is an equivalent circuit diagram showing the embodiment of FIG. 1;
【図４】図１の実施形態の製造プロセスを示す工程図で
ある。FIG. 4 is a process chart showing a manufacturing process of the embodiment of FIG. 1;
【図５】（ａ）は図１の実施形態におけるＧａＮ系発光
ダイオードの配置状態を模式的に示す平面図であり、
（ｂ）はその発光状態を模式的に示す側面図である。FIG. 5A is a plan view schematically showing an arrangement state of GaN-based light emitting diodes in the embodiment of FIG. 1,
(B) is a side view schematically showing the light emitting state.
【図６】ＧａＮ系発光ダイオードの電流の流れおよび発
光強度分布の概略を示す図解図であり、（ａ）〜（ｃ）
は透光性電極の抵抗が小さい場合、（ｄ）〜（ｆ）は透
光性電極の抵抗が大きい場合をそれぞれ示す。FIG. 6 is an illustrative view schematically showing a current flow and a light emission intensity distribution of the GaN-based light emitting diode, and (a) to (c) of FIG.
Shows the case where the resistance of the translucent electrode is small, and (d) to (f) show the case where the resistance of the translucent electrode is large.
【図７】（ａ）はこの発明の他の実施の形態を示す等価
回路図であり、（ｂ）はその実施の形態におけるＧａＮ
系発光ダイオードの配置状態を模式的に示す平面図であ
り、（ｃ）はその発光状態を模式的に示す側面図であ
る。FIG. 7A is an equivalent circuit diagram showing another embodiment of the present invention, and FIG. 7B is a GaN according to the embodiment.
It is a top view which shows typically the arrangement | positioning state of a system light emitting diode, and (c) is a side view which shows the light emission state typically.
【図８】この発明のその他の実施の形態を示す等価回路
図であり、（ａ）はＧａＮ系発光ダイオードに抵抗を付
加したもの、（ｂ）はＧａＮ系発光ダイオードにＦＥＴ
を付加したものをそれぞれ示す。8A and 8B are equivalent circuit diagrams showing another embodiment of the present invention, wherein FIG. 8A is a diagram in which a resistance is added to a GaN-based light emitting diode, and FIG.
Are shown.
【図９】（ａ）は従来技術を示す平面図であり、（ｂ）
はその端面図である。FIG. 9A is a plan view showing a conventional technique, and FIG.
Is an end view thereof.
１０ 発光部品 １２、１２ａ 絶縁性基板 １４ａ〜１４ｄ、１４ｎ ＧａＮ系発光ダイオード １６ ｎ型ＧａＮバッファ層 １８ 発光層 ２０ ｐ型ＧａＮコンタクト層 ２２ 透光性電極 ２４ ｎ型側電極 ２６ 保護膜 ２８ 内部配線 ３０ パッド電極 Ｗ１ 内部配線の幅 REFERENCE SIGNS LIST 10 light emitting component 12, 12 a insulating substrate 14 a to 14 d, 14 n GaN-based light emitting diode 16 n-type GaN buffer layer 18 light-emitting layer 20 p-type GaN contact layer 22 light-transmitting electrode 24 n-type side electrode 26 protective film 28 internal wiring 30 Pad electrode W1 Internal wiring width
Claims (7)
されかつ接続される複数の３族窒化物半導体発光素子を
備える、発光部品。1. A light-emitting component comprising: a substrate; and a plurality of Group III nitride semiconductor light-emitting devices formed and connected to the substrate, respectively.
直列に接続される、請求項１に記載の発光部品。2. The light emitting component according to claim 1, wherein said plurality of group III nitride semiconductor light emitting devices are connected in series.
記基板上に形成される第１導電型の半導体層、前記第１
導電型の半導体層上の一端縁近傍かつ幅方向に延びて形
成される第１導電型側電極、前記第１導電性の半導体層
上に形成される第２導電型の半導体層、および前記第２
導電型の半導体層上に面状に形成される第２導電型側電
極を含み、 前記各３族窒化物半導体発光素子は直線状に配列され、
かつ相互に隣接する前記３族窒化物半導体発光素子の一
方の発光素子の前記第１導電型側電極と他方の発光素子
の前記第２導電型側電極とは幅を有する内部配線によっ
て接続される、請求項１または２に記載の発光部品。3. Each of the group III nitride semiconductor light emitting devices includes a semiconductor layer of a first conductivity type formed on the substrate,
A first-conductivity-type-side electrode formed near the one end edge of the conductivity-type semiconductor layer and extending in the width direction; a second-conductivity-type semiconductor layer formed on the first-conductivity-type semiconductor layer; 2
A second conductivity type side electrode formed in a planar shape on a conductivity type semiconductor layer, wherein each of the group III nitride semiconductor light emitting elements is linearly arranged;
The first conductivity type side electrode of one light emitting element of the group III nitride semiconductor light emitting elements adjacent to each other is connected to the second conductivity type side electrode of the other light emitting element by an internal wiring having a width. The light emitting component according to claim 1.
１、前記第２導電型側電極の抵抗をＲ２とすると、Ｒ１
≒Ｒ２に設定される、請求項３に記載の発光部品。4. The resistance of the first conductivity type semiconductor layer is R
1. If the resistance of the second conductivity type side electrode is R2, R1
The light-emitting component according to claim 3, wherein 発 光 R2 is set.
む、請求項３または４に記載の発光部品。5. The light emitting component according to claim 3, wherein the second conductivity type side electrode includes a translucent electrode.
動電圧に応じて決定される、請求項１ないし５のいずれ
かに記載の発光部品。6. The light emitting component according to claim 1, wherein the number of said group III nitride semiconductor light emitting devices is determined according to a driving voltage.
系発光素子を含む、請求項１ないし６のいずれかに記載
の発光部品。7. The group III nitride semiconductor light emitting device is GaN
The light emitting component according to claim 1, comprising a system light emitting element.
Priority Applications (1)
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|---|---|---|---|
| JP33108397A JP3505374B2 (en) | 1997-11-14 | 1997-11-14 | Light emitting components |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33108397A JP3505374B2 (en) | 1997-11-14 | 1997-11-14 | Light emitting components |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003353149A Division JP2004048067A (en) | 2003-10-14 | 2003-10-14 | Light emitting component and method for manufacturing the same |
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| Publication Number | Publication Date |
|---|---|
| JPH11150303A true JPH11150303A (en) | 1999-06-02 |
| JP3505374B2 JP3505374B2 (en) | 2004-03-08 |
Family
ID=18239667
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33108397A Expired - Fee Related JP3505374B2 (en) | 1997-11-14 | 1997-11-14 | Light emitting components |
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