KR20010032642A - 기판도금장치 - Google Patents
기판도금장치 Download PDFInfo
- Publication number
- KR20010032642A KR20010032642A KR1020007005920A KR20007005920A KR20010032642A KR 20010032642 A KR20010032642 A KR 20010032642A KR 1020007005920 A KR1020007005920 A KR 1020007005920A KR 20007005920 A KR20007005920 A KR 20007005920A KR 20010032642 A KR20010032642 A KR 20010032642A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- plating
- plating apparatus
- treatment
- cleaning
- Prior art date
Links
- 238000007747 plating Methods 0.000 title claims abstract description 299
- 239000000758 substrate Substances 0.000 title claims abstract description 157
- 238000011282 treatment Methods 0.000 claims abstract description 86
- 238000004140 cleaning Methods 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 54
- 238000003860 storage Methods 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000005406 washing Methods 0.000 claims abstract description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 109
- 239000004065 semiconductor Substances 0.000 abstract description 104
- 230000015572 biosynthetic process Effects 0.000 abstract description 15
- 239000002245 particle Substances 0.000 abstract description 10
- 238000011109 contamination Methods 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 4
- 239000010949 copper Substances 0.000 description 96
- 239000010408 film Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 238000001035 drying Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000007772 electroless plating Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000037452 priming Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims (8)
- 기판에 도금처리를 실시하는 도금처리부와, 이 도금처리후의 기판을 세정하는 세정처리부를 구비하는 기판도금 장치에 있어서,상기 도금처리부에서 도금처리를 행하고 다시 세정처리부에서 세정처리가 종료된 기판을 보관액중에 침지하여 보관하는 기판보관조를 설치한 것을 특징으로 하는 기판도금장치.
- 제 1항에 있어서,상기 기판보관조에 수용하는 보관액이 순수 또는 희석황산 또는 도금표면의 산화를 방지하는 산화방지액인 것을 특징으로 하는 기판도금장치.
- 기판에 도금처리를 실시하는 도금처리부를 구비하는 기판도금장치에 있어서,상기 도금처리부에서 도금처리를 행하고, 이 도금처리후의 기판을 순수가 흐르는 수로중을 이동시키는 기판수중반송기를 설치한 것을 특징으로 하는 기판도금 장치.
- 기판에 도금처리를 실시하는 도금처리부와, 이 도금처리후의 기판을 세정하는 세정처리부를 구비하는 기판도금장치에 있어서,상기 도금처리되는 기판을 1매씩 상기 기판도금장치내로 도입하여 도금처리및 수세처리를 행한 후, 1매씩 상기 기판도금장치밖으로 배출하도록 상기 기판의 상기 기판도금장치내로의 도입과 배출중의 적어도 한 쪽을 도금장치내의 기판반송기로 행하는 것을 특징으로 하는 기판도금장치.
- 제 4항에 있어서,보관액을 수용한 기판보관조를 설치하고, 상기 기판도금장치내로 도입하여 상기 도금처리부에서 도금처리하기까지의 대기중의 기판 또는 상기 도금처리부 및 세정처리부에서 도금처리 및 세정처리한 후의 기판을 상기 기판보관조의 보관액중에 침지하여 보관하는 것을 특징으로 하는 기판도금장치.
- 제 4항에 있어서,상기 기판도금장치내에 도입된 기판의 반입위치로부터 상기 도금처리부 근방에 도달할 때까지 및/또는 상기 세정처리부 근방으로부터 상기 기판도금장치의 기판배출위치에 도달할 때까지, 상기 기판을 순수중을 지나 반송하는 기판수중반송기를 설치하는 것을 특징으로 하는 기판도금장치.
- 제 4항에 있어서,상기 도금처리부 및 세정처리부에서 도금처리 및 세정처리한 후의 기판을 세정액이 부착된 채로 상기 기판도금장치내에 배치되어 있는 로봇에 의해 상기 기판도금장치의 밖으로 배출하는 것을 특징으로 하는 기판도금장치.
- 제 4항에 있어서,상기 도금처리부 및 세정처리부에서 도금처리 및 세정처리한 후의 기판을 건조시키고, 상기 기판도금장치내에 배치되어 있는 로봇에 의해 상기 기판도금장치의 밖으로 배출하는 것을 특징으로 하는 기판도금장치.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10282844A JP2000109994A (ja) | 1998-10-05 | 1998-10-05 | 基板メッキ装置 |
JP10-282845 | 1998-10-05 | ||
JP10-282844 | 1998-10-05 | ||
JP28284598A JP4044223B2 (ja) | 1998-10-05 | 1998-10-05 | 基板メッキ装置 |
PCT/JP1999/005439 WO2000020663A1 (en) | 1998-10-05 | 1999-10-04 | Substrate plating device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010032642A true KR20010032642A (ko) | 2001-04-25 |
KR100694563B1 KR100694563B1 (ko) | 2007-03-13 |
Family
ID=26554799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007005920A KR100694563B1 (ko) | 1998-10-05 | 1999-10-04 | 기판도금장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6495004B1 (ko) |
EP (1) | EP1048756A4 (ko) |
KR (1) | KR100694563B1 (ko) |
TW (1) | TW428223B (ko) |
WO (1) | WO2000020663A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100637890B1 (ko) * | 1999-07-08 | 2006-10-23 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금장치 및 도금방법 및 도금처리설비 |
KR101052319B1 (ko) * | 2002-11-15 | 2011-07-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치 및 기판처리방법 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020043466A1 (en) * | 1999-07-09 | 2002-04-18 | Applied Materials, Inc. | Method and apparatus for patching electrochemically deposited layers using electroless deposited materials |
KR20010107766A (ko) | 2000-05-26 | 2001-12-07 | 마에다 시게루 | 기판처리장치 및 기판도금장치 |
US20060011487A1 (en) * | 2001-05-31 | 2006-01-19 | Surfect Technologies, Inc. | Submicron and nano size particle encapsulation by electrochemical process and apparatus |
CN1329972C (zh) * | 2001-08-13 | 2007-08-01 | 株式会社荏原制作所 | 半导体器件及其制造方法 |
JP2006513041A (ja) * | 2002-12-05 | 2006-04-20 | サーフェクト テクノロジーズ インク. | コーティングされた磁性粒子及びその応用 |
US20050230260A1 (en) * | 2004-02-04 | 2005-10-20 | Surfect Technologies, Inc. | Plating apparatus and method |
TW201401359A (zh) * | 2012-04-30 | 2014-01-01 | Applied Materials Inc | 用以分隔流動樑式輸送器與半導體基板清潔環境的方法及設備 |
KR101396919B1 (ko) * | 2012-12-13 | 2014-05-19 | 한국생산기술연구원 | 폴리머 필름과 금속층 간의 접합력 향상 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63255821A (ja) | 1987-04-13 | 1988-10-24 | Kobe Steel Ltd | 磁気デイスク用基盤の変色防止法 |
US4746414A (en) * | 1987-09-08 | 1988-05-24 | The United States Of America As Represented By The Secretary Of The Navy | Zero discharge spray rinse system for electroplating operations |
US5488964A (en) * | 1991-05-08 | 1996-02-06 | Tokyo Electron Limited | Washing apparatus, and washing method |
JP3654923B2 (ja) * | 1994-02-28 | 2005-06-02 | 野村マイクロ・サイエンス株式会社 | ウェハの保管方法及びその輸送方法 |
JP2762230B2 (ja) * | 1994-03-25 | 1998-06-04 | 信越半導体株式会社 | シリコンウエーハの保管方法 |
JPH09289185A (ja) | 1996-04-22 | 1997-11-04 | Hitachi Ltd | 半導体ウェハ洗浄装置 |
JP3583883B2 (ja) * | 1997-01-24 | 2004-11-04 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | 自動ウェーハめっき装置 |
US5960956A (en) * | 1997-02-19 | 1999-10-05 | St. Jude Medical, Inc. | Storage container |
US5932077A (en) * | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
-
1999
- 1999-10-04 EP EP99970132A patent/EP1048756A4/en not_active Withdrawn
- 1999-10-04 US US09/555,650 patent/US6495004B1/en not_active Expired - Lifetime
- 1999-10-04 WO PCT/JP1999/005439 patent/WO2000020663A1/ja active IP Right Grant
- 1999-10-04 TW TW088117038A patent/TW428223B/zh not_active IP Right Cessation
- 1999-10-04 KR KR1020007005920A patent/KR100694563B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100637890B1 (ko) * | 1999-07-08 | 2006-10-23 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금장치 및 도금방법 및 도금처리설비 |
KR101052319B1 (ko) * | 2002-11-15 | 2011-07-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치 및 기판처리방법 |
Also Published As
Publication number | Publication date |
---|---|
TW428223B (en) | 2001-04-01 |
WO2000020663A1 (en) | 2000-04-13 |
KR100694563B1 (ko) | 2007-03-13 |
EP1048756A4 (en) | 2006-06-21 |
US6495004B1 (en) | 2002-12-17 |
EP1048756A1 (en) | 2000-11-02 |
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