KR20010005722A - 화합물 반도체 레이저 - Google Patents
화합물 반도체 레이저 Download PDFInfo
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- KR20010005722A KR20010005722A KR1019997008790A KR19997008790A KR20010005722A KR 20010005722 A KR20010005722 A KR 20010005722A KR 1019997008790 A KR1019997008790 A KR 1019997008790A KR 19997008790 A KR19997008790 A KR 19997008790A KR 20010005722 A KR20010005722 A KR 20010005722A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (14)
- Ⅲ족 질화물 반도체에 의한 화합물 반도체 레이저에 있어서,기판 상의 제1 도전형을 갖는 제1 클래드층과,상기 제1 클래드층 상의 활성층과,상기 활성층 상의 제2 도전형을 갖는 제2 클래드층과,상기 제2 클래드층 상에 형성되고, 전류를 상기 활성층의 선택된 영역에 협착시키기 위한 개구부를 갖는 매립층을 구비하고 있고,상기 제2 클래드층의 상부는 릿지부를 갖고, 상기 릿지부는 상기 매립층의 상기 개구부 내에 위치하며,상기 매립층은 상기 활성층으로부터 발하는 광을 실질적으로 흡수하지 않으며, 상기 제2 클래드층과 개략 동일한 값의 굴절율을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 제2 클래드층 상부의 위에, 상기 제2 도전형을 갖고 상기 제2 클래드층보다 높은 값의 굴절율을 갖는 광 가이드층과, 상기 제2 도전형을 갖는 제3 클래드층과, 상기 제2 도전형을 갖는 컨택트층이 차례로 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- 제2항에 있어서, 상기 광 가이드층은 InGaAlN으로 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서,상기 매립층은, TiO2, ZrO2, HfO2, CeO2, In2O3, Nd2O3, Sb2O3, SnO2, Ta2O3, ZnO를 포함하는 그룹 중 적어도 1종류 이상의 화합물을 함유하는 유전체막인 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 매립층은 ZnMgCdSSe 화합물 반도체에 의해 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 매립층은 상기 제2 클래드층과 개략 동일한 조성의 반도체에 의해 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 매립층은 절연성을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 매립층은 상기 제1 도전형을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제1항에 있어서, 상기 제2 클래드층 상부의 위에, 상기 제2 도전형을 갖는 컨택트층이 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- Ⅲ족 질화물 반도체에 의한 화합물 반도체 레이저에 있어서,기판 상의 제1 도전형을 갖는 제1 클래드층과,상기 제1 클래드층 상의 활성층과,상기 활성층 상의 제2 도전형을 갖는 제2 클래드층과,상기 제2 클래드층 상에 형성되고, 전류를 상기 활성층의 선택된 영역에 협착시키기 위한 개구부를 갖는 광 반사층을 구비하고 있고,상기 광 반사층의 상기 개구부 내에는, 상기 제2 도전형을 가지며 상기 제2 클래드층과 개략 동일한 조성의 반도체에 의한 층이 형성되어 있고,상기 광 반사층은 상기 제2 클래드층보다도 낮은 값의 굴절율을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제10항에 있어서, 상기 광 반사층은 InGaAlN으로 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
- 제10항에 있어서, 상기 광 반사층은 절연성을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제10항에 있어서, 상기 광 반사층은 상기 제1 도전형을 갖는 것을 특징으로 하는 화합물 반도체 레이저.
- 제10항에 있어서, 상기 광 반사층 상에, 상기 제2 도전형을 갖는 제3 클래드층과, 상기 제2 도전형을 갖는 컨택트층이 형성되어 있는 것을 특징으로 하는 화합물 반도체 레이저.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP1997-074779 | 1997-03-27 | ||
JP07477997A JP3897186B2 (ja) | 1997-03-27 | 1997-03-27 | 化合物半導体レーザ |
Publications (2)
Publication Number | Publication Date |
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KR20010005722A true KR20010005722A (ko) | 2001-01-15 |
KR100362862B1 KR100362862B1 (ko) | 2002-12-11 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019997008790A KR100362862B1 (ko) | 1997-03-27 | 1998-03-25 | 화합물 반도체 레이저 |
Country Status (6)
Country | Link |
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US (3) | US6597716B1 (ko) |
EP (3) | EP1437809B1 (ko) |
JP (1) | JP3897186B2 (ko) |
KR (1) | KR100362862B1 (ko) |
DE (3) | DE69836698T2 (ko) |
WO (1) | WO1998044606A1 (ko) |
Cited By (2)
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KR20030038125A (ko) * | 2001-11-08 | 2003-05-16 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
KR100437786B1 (ko) * | 2001-11-09 | 2004-06-30 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
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JPH0856055A (ja) | 1994-08-11 | 1996-02-27 | Hitachi Ltd | 半導体レーザー装置 |
JPH0897507A (ja) * | 1994-09-29 | 1996-04-12 | Rohm Co Ltd | 半導体レーザ |
JP3432910B2 (ja) * | 1994-09-28 | 2003-08-04 | ローム株式会社 | 半導体レーザ |
EP0723322B1 (en) * | 1995-01-20 | 2000-10-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
JPH08204285A (ja) * | 1995-01-26 | 1996-08-09 | Nec Corp | 半導体レーザ及びその製造方法 |
US5742629A (en) * | 1995-07-21 | 1998-04-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and production method thereof |
JPH09106946A (ja) * | 1995-10-11 | 1997-04-22 | Mitsubishi Electric Corp | 半導体装置,及び半導体レーザ,並びに高電子移動度トランジスタ装置 |
JPH09270569A (ja) | 1996-01-25 | 1997-10-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
US6055255A (en) * | 1996-02-01 | 2000-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
US5812576A (en) * | 1996-08-26 | 1998-09-22 | Xerox Corporation | Loss-guided semiconductor lasers |
-
1997
- 1997-03-27 JP JP07477997A patent/JP3897186B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-25 WO PCT/JP1998/001308 patent/WO1998044606A1/ja active IP Right Grant
- 1998-03-25 US US09/402,135 patent/US6597716B1/en not_active Expired - Lifetime
- 1998-03-25 EP EP04009210A patent/EP1437809B1/en not_active Expired - Lifetime
- 1998-03-25 EP EP06023105A patent/EP1744419B1/en not_active Expired - Lifetime
- 1998-03-25 EP EP98910983A patent/EP0971465B1/en not_active Expired - Lifetime
- 1998-03-25 DE DE69836698T patent/DE69836698T2/de not_active Expired - Lifetime
- 1998-03-25 KR KR1019997008790A patent/KR100362862B1/ko not_active IP Right Cessation
- 1998-03-25 DE DE69841813T patent/DE69841813D1/de not_active Expired - Lifetime
- 1998-03-25 DE DE1998624162 patent/DE69824162T2/de not_active Expired - Lifetime
-
2003
- 2003-06-18 US US10/465,164 patent/US6855570B2/en not_active Expired - Lifetime
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2004
- 2004-11-18 US US10/993,563 patent/US7042011B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030038125A (ko) * | 2001-11-08 | 2003-05-16 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
KR100437786B1 (ko) * | 2001-11-09 | 2004-06-30 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
Also Published As
Publication number | Publication date |
---|---|
KR100362862B1 (ko) | 2002-12-11 |
DE69824162D1 (de) | 2004-07-01 |
EP1744419A3 (en) | 2007-04-04 |
US6855570B2 (en) | 2005-02-15 |
US20050135447A1 (en) | 2005-06-23 |
US20030206567A1 (en) | 2003-11-06 |
EP1437809B1 (en) | 2006-12-20 |
JPH10270792A (ja) | 1998-10-09 |
EP1744419B1 (en) | 2010-08-04 |
EP0971465A1 (en) | 2000-01-12 |
DE69836698T2 (de) | 2007-10-31 |
JP3897186B2 (ja) | 2007-03-22 |
EP1744419A2 (en) | 2007-01-17 |
US7042011B2 (en) | 2006-05-09 |
EP0971465A4 (en) | 2000-09-13 |
DE69841813D1 (de) | 2010-09-16 |
EP1437809A1 (en) | 2004-07-14 |
WO1998044606A1 (en) | 1998-10-08 |
DE69824162T2 (de) | 2004-11-18 |
US6597716B1 (en) | 2003-07-22 |
EP0971465B1 (en) | 2004-05-26 |
DE69836698D1 (de) | 2007-02-01 |
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