KR20010003742A - 박막 트랜지스터 액정 표시 소자 - Google Patents
박막 트랜지스터 액정 표시 소자 Download PDFInfo
- Publication number
- KR20010003742A KR20010003742A KR1019990024173A KR19990024173A KR20010003742A KR 20010003742 A KR20010003742 A KR 20010003742A KR 1019990024173 A KR1019990024173 A KR 1019990024173A KR 19990024173 A KR19990024173 A KR 19990024173A KR 20010003742 A KR20010003742 A KR 20010003742A
- Authority
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- South Korea
- Prior art keywords
- gate
- source
- drains
- thin film
- film transistor
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
- 절연기판 상에 매트릭스 형태로 배치된 게이트 라인 및 데이터 라인과,상기 게이트 라인과 데이터 라인의 교차부분에 배치되고,상기 게이트 라인에서 돌출된 게이트와,상기 게이트 상부에 배치된 액티브층과,상기 데이터 라인에서 돌출되고 상기 게이트의 일측과 오버랩하면서 서로 평행하게 배열된 제 1 및 제 2 드레인과,상기 제 1 및 제 2 드레인 사이의 중앙에서 상기 게이트의 다른측과 오버랩하면서 상기 제 1 및 제 2 드레인과 평행하게 배열된 소오스를 포함하는 박막 트랜지스터와,상기 게이트 라인 및 데이터 라인에 의해 형성된 공간에 배치되고 상기 박막 트랜지스터의 소오스와 콘택하는 화소전극을 포함하는 것을 특징으로 하는 박막 트랜지스터 액정 표시 소자.
- 제 1 항에 있어서, 상기 제 1 및 제 2 드레인과 소오스 사이의 이격거리가 서로 같은 것을 특징으로 하는 박막 트랜지스터 액정 표시 소자.
- 제 2 항에 있어서, 상기 소오스의 폭은 상기 이격거리보다 큰 것을 특징으로 하는 박막 트랜지스터 액정 표시 소자.
- 제 1 항에 있어서, 상기 소오스와 상기 게이트 사이의 캐패시턴스의 면적은 게이트 절연막의 단위면적당 용량×게이트의 폭×(소오스의 폭+소오스와 드레인 사이의 거리)인 것을 특징으로 하는 박막 트랜지스터 액정 표시 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0024173A KR100494680B1 (ko) | 1999-06-25 | 1999-06-25 | 박막 트랜지스터 액정 표시 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0024173A KR100494680B1 (ko) | 1999-06-25 | 1999-06-25 | 박막 트랜지스터 액정 표시 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010003742A true KR20010003742A (ko) | 2001-01-15 |
KR100494680B1 KR100494680B1 (ko) | 2005-06-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-1999-0024173A KR100494680B1 (ko) | 1999-06-25 | 1999-06-25 | 박막 트랜지스터 액정 표시 소자 |
Country Status (1)
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KR (1) | KR100494680B1 (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040032603A (ko) * | 2002-10-10 | 2004-04-17 | 비오이 하이디스 테크놀로지 주식회사 | 디지털 엑스레이 디텍터 |
KR100698049B1 (ko) * | 2003-06-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
KR100875182B1 (ko) * | 2002-04-20 | 2008-12-22 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
US7655949B2 (en) | 2006-10-02 | 2010-02-02 | Samsung Electronics Co., Ltd. | Thin film transistor substrate having structure for compensating for mask misalignment |
KR100940987B1 (ko) * | 2003-12-29 | 2010-02-05 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR101246788B1 (ko) * | 2006-12-29 | 2013-03-26 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01267617A (ja) * | 1988-04-20 | 1989-10-25 | Seiko Epson Corp | 薄膜トランジスタ |
JPH05119347A (ja) * | 1991-10-28 | 1993-05-18 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH06258667A (ja) * | 1993-03-05 | 1994-09-16 | Hitachi Ltd | 液晶表示装置 |
KR100495794B1 (ko) * | 1997-10-17 | 2005-09-28 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터 |
KR100458836B1 (ko) * | 1997-08-13 | 2005-05-24 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터기판 |
-
1999
- 1999-06-25 KR KR10-1999-0024173A patent/KR100494680B1/ko not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100875182B1 (ko) * | 2002-04-20 | 2008-12-22 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
US7646439B1 (en) | 2002-04-20 | 2010-01-12 | Lg Display Co., Ltd. | Liquid crystal display and fabricating method thereof |
KR20040032603A (ko) * | 2002-10-10 | 2004-04-17 | 비오이 하이디스 테크놀로지 주식회사 | 디지털 엑스레이 디텍터 |
KR100698049B1 (ko) * | 2003-06-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
KR100940987B1 (ko) * | 2003-12-29 | 2010-02-05 | 엘지디스플레이 주식회사 | 액정표시장치 |
US7655949B2 (en) | 2006-10-02 | 2010-02-02 | Samsung Electronics Co., Ltd. | Thin film transistor substrate having structure for compensating for mask misalignment |
KR101246788B1 (ko) * | 2006-12-29 | 2013-03-26 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
Also Published As
Publication number | Publication date |
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KR100494680B1 (ko) | 2005-06-13 |
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