KR20000076858A - thin film forming device and liquid crystal display having thin film formed using the same - Google Patents
thin film forming device and liquid crystal display having thin film formed using the same Download PDFInfo
- Publication number
- KR20000076858A KR20000076858A KR1020000013000A KR20000013000A KR20000076858A KR 20000076858 A KR20000076858 A KR 20000076858A KR 1020000013000 A KR1020000013000 A KR 1020000013000A KR 20000013000 A KR20000013000 A KR 20000013000A KR 20000076858 A KR20000076858 A KR 20000076858A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- thin film
- susceptor
- film
- mask
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000010408 film Substances 0.000 claims abstract description 43
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims 4
- 230000007547 defect Effects 0.000 abstract description 12
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Abstract
챔버벽이나 내부구조물로의 막의 부착을 억제하고, 이들에 부착된 막의 박리에 의한 발진을 방지하는 박막 성막장치의 구조 및 이것을 사용해서 박막이 형성된 액정표시장치에 관한 것으로서, 박막 성막장치의 챔버벽이나 내부구조물로의 막의 부착을 억제하고, 이들에 부착된 막의 박리에 의한 발진을 방지함과 동시에 패턴결함이 없는 고품질의 액정표시장치를 제공하기 위해, 피처리기판이 설치된 진공챔버내로 방전용 가스를 도입하고, 기판과 대향해서 마련된 타겟에 부전하를 인가해서 플라즈마 방전시키고, 스퍼터링에 의해 기판표면에 박막을 형성하는 성막장치에 있어서, 기판을 탑재하기 위한 서셉터와; 서셉터 및 기판과 접촉하지 않고 기판주변부를 전체둘레에 걸쳐서 상측에서 덮는 프레임형상의 마스크를 구비하고, 서셉터 표면 주변부와 마스크 이면에 서로 소정 간격을 유지하면서 서로 맞물리는 제방형상의 볼록부를 마련하는 구성으로 하였다.The present invention relates to a structure of a thin film deposition apparatus which suppresses adhesion of a film to a chamber wall or an internal structure and prevents oscillation due to peeling of the film attached thereto, and a liquid crystal display device in which a thin film is formed using the same. Gas to be discharged into a vacuum chamber in which a substrate to be processed is provided in order to suppress adhesion of the film to the internal structure, to prevent oscillation by peeling of the film attached thereto, and to provide a high quality liquid crystal display device without pattern defects. A film forming apparatus for introducing a film, applying a negative charge to a target provided to face a substrate, causing plasma discharge, and forming a thin film on the surface of the substrate by sputtering, comprising: a susceptor for mounting a substrate; A frame-shaped mask covering the substrate peripheral portion over the entire circumference without contacting the susceptor and the substrate, and providing an embankment-shaped convex portion engaged with each other while maintaining a predetermined distance from each other around the susceptor surface and the mask back surface. It was set as the structure.
이와 같이 하는 것에 의해, 패턴결함의 발생이 억제되고 제품의 양품률이 향상하며, 성막장치를 사용해서 박막을 형성하는 것에 의해 패턴결함이 적고 고품질의 액정표시장치가 얻어진다는 효과가 얻어진다.By doing in this way, generation | occurrence | production of a pattern defect is suppressed and the yield of a product improves, and the effect that a high quality liquid crystal display device is obtained by forming a thin film using a film-forming apparatus with little pattern defect is obtained.
Description
본 발명은 박막 성막장치에 관한 것으로서, 특히 챔버벽이나 내부구조물로의 막의 부착을 억제하고, 이들에 부착된 막의 박리에 의한 발진을 방지하는 박막 성막장치의 구조 및 이것을 사용해서 박막이 형성된 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus, and more particularly, to a structure of a thin film deposition apparatus which suppresses adhesion of a film to a chamber wall or an internal structure, and prevents oscillation by peeling of the film attached thereto, and a liquid crystal display in which a thin film is formed using the same. Relates to a device.
도 4는 종래의 박막 성막장치의 구조를 도시한 단면도이다. 도면에 있어서, (1)은 진공챔버의 챔버벽, (12)는 피처리기판인 기판(3)을 탑재하기 위한 서셉터(suscepter), (4)는 기판(3)과 대향해서 마련된 타겟, (15)는 서셉터(12) 및 기판(3)과 접촉하지 않고 기판(3) 주변부를 전체둘레에 걸쳐서 상측에서 덮는 프레임형상의 마스크, (6)은 접지차폐(grand shield), (7)은 가스배관을 각각 나타내고 있다.4 is a cross-sectional view showing the structure of a conventional thin film deposition apparatus. In the drawing, reference numeral 1 denotes a chamber wall of a vacuum chamber, 12 denotes a susceptor for mounting a substrate 3 which is a substrate to be processed, and 4 denotes a target provided to face the substrate 3; 15 is a frame-shaped mask which covers the periphery of the substrate 3 from the upper side without contacting the susceptor 12 and the substrate 3, (6) is a grand shield, (7) Indicates gas piping, respectively.
종래장치에 의한 박막 성막방법을 설명한다. 진공챔버내의 서셉터(12)에 기판(3)을 탑재하고, 가스배관(7)을 통해서 챔버내로 방전용 가스를 도입한다. 기판(3)과 대향하는 타겟(4)에 부전하를 인가해서 플라즈마방전시키고, 스퍼터링에 의해 기판(3) 표면에 박막을 형성한다. 서셉터(12)와 타겟(4) 사이에는 기판(3) 주위를 덮는 프레임형상의 마스크(15)가 배치되고, 기판(3) 주변부로의 막의 부착을 방지하고 있다. 또한, 도 5는 타겟(4)측에서 마스크(15)를 보았을 때의 정면도이다.A thin film deposition method by a conventional apparatus will be described. The substrate 3 is mounted on the susceptor 12 in the vacuum chamber, and the gas for discharge is introduced into the chamber through the gas pipe 7. A negative charge is applied to the target 4 facing the substrate 3 to cause plasma discharge, and a thin film is formed on the surface of the substrate 3 by sputtering. A frame-shaped mask 15 covering the periphery of the substrate 3 is disposed between the susceptor 12 and the target 4 to prevent adhesion of a film to the periphery of the substrate 3. 5 is a front view when the mask 15 is seen from the target 4 side.
상기와 같은 종래의 성막장치에 있어서는 기판(3) 표면에 있어서의 이상방전방지를 위해, 마스크(15)와 기판(3)이 접촉하지 않도록 1㎜ 이상의 간격을 둘 필요가 있었다. 또, 기판(3) 주변부까지 성막하는 경우에는 마스크(15)의 개구면적을 넓게 취해 마스크(15)와 기판(3)이 중합하는 양을 작게 할 필요가 있었다. 이 때문에, 성막시에는 도 6에 도시한 바와 같이 막(8)이 기판(3)과 마스크(15)의 간극을 통해서 마스크(15) 이면측이나 서셉터(12)의 주변부 및 가스배관(7) 등의 구조물이나 챔버벽(1)로 돌아들어가 부착되고, 어느 정도의 두께로 되면 막(8)이 프레이크(9)로 되어 박리되고, 이들이 기판(3) 상에 부착되면 패턴결함 등을 일으켜 제품의 양품률을 저하시킨다는 문제가 있었다. 예를 들면, 상기한 종래장치를 사용해서 박막이 형성된 액정표시장치에서는 도 7에 도시한 바와 같은 패턴결함이 발생하기 쉽고 고품질인 액정표시장치를 얻는 것이 곤란하였다. 도 7에 있어서, (a)는 정상인 배선, (b)는 양품률 저하의 원인으로 되는 단선, (c), (d)는 품질저하의 원인으로 되는 패턴이상을 나타내고 있다.In the conventional film forming apparatus as described above, in order to prevent abnormal discharge on the surface of the substrate 3, it is necessary to provide a space of 1 mm or more so that the mask 15 and the substrate 3 do not contact each other. In addition, when forming to the periphery of the board | substrate 3, it was necessary to make the opening area of the mask 15 wide, and to reduce the amount which the mask 15 and the board | substrate 3 superpose | polymerize. For this reason, at the time of film formation, as shown in FIG. 6, the film 8 passes through the gap between the substrate 3 and the mask 15, on the back side of the mask 15, the periphery of the susceptor 12, and the gas piping 7. The film 8 becomes a flake 9 and peels off when it comes to the structure and the chamber wall 1, etc., and becomes a certain thickness, and when they adhere on the board | substrate 3, it causes a pattern defect etc. There was a problem of lowering the yield rate of the product. For example, in the liquid crystal display device in which a thin film is formed by using the above-described conventional device, it is difficult to obtain a high-quality liquid crystal display device easily causing pattern defects as shown in FIG. In FIG. 7, (a) shows normal wiring, (b) shows disconnection which causes a decrease in yield, and (c) and (d) shows pattern abnormalities that cause quality deterioration.
본 발명의 목적은 상기와 같은 문제점을 해소하기 위해 이루어진 것으로서, 박막 성막장치의 챔버벽이나 내부구조물로의 막의 부착을 억제하고, 이들에 부착된 막의 박리에 의한 발진을 방지함과 동시에 패턴결함이 없는 고품질의 액정표시장치를 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and suppresses the adhesion of the film to the chamber wall or the internal structure of the thin film deposition apparatus, prevents the oscillation by peeling of the film attached thereto, and at the same time, the pattern defect It is to provide a high quality liquid crystal display device.
도 1은 본 발명의 실시예 1인 박막 성막장치의 구조를 도시한 단면도,1 is a cross-sectional view showing the structure of a thin film deposition apparatus according to Embodiment 1 of the present invention;
도 2는 본 발명의 실시예 1인 박막 성막장치에 있어서의 성막시의 막부착상황을 설명하는 부분확대단면도,FIG. 2 is a partially enlarged cross-sectional view illustrating a film adhesion state at the time of film formation in the thin film film forming apparatus according to the first embodiment of the present invention; FIG.
도 3은 본 발명의 실시예 2인 박막 성막장치를 도시한 부분확대 단면도,3 is a partially enlarged cross-sectional view showing a thin film deposition apparatus according to a second embodiment of the present invention;
도 4는 종래의 박막 성막장치의 구조를 도시한 단면도,4 is a cross-sectional view showing the structure of a conventional thin film deposition apparatus;
도 5는 종래의 박막 성막장치에 있어서의 마스크를 타겟측에서 보았을 때의 정면도,5 is a front view when the mask is viewed from the target side in the conventional thin film forming apparatus;
도 6은 종래의 박막 성막장치에 있어서의 성막시의 막부착 상황을 설명하는 부분확대단면도,Fig. 6 is a partially enlarged cross-sectional view illustrating a film adhesion state at the time of film formation in a conventional thin film film forming apparatus.
도 7은 종래의 박막 성막장치를 사용해서 형성된 배선의 패턴결함을 도시한 도면.Fig. 7 is a diagram showing a pattern defect of wiring formed using a conventional thin film deposition apparatus.
※ 도면의 주요부분에 대한 부호의 설명※ Explanation of code for main part of drawing
1: 챔버벽, 2, 12; 서셉터(suscepter), 2a, 2b; 볼록부, 3; 기판, 4; 타겟,1: chamber wall, 2, 12; Susceptor, 2a, 2b; Convex, 3; A substrate, 4; target,
5, 15; 마스크, 5a, 5b; 볼록부, 6: 접지차폐(grand shield), 7; 가스배관,5, 15; Mask, 5a, 5b; Convex, 6: grand shield, 7; Gas Pipeline,
8; 막, 9; 프레이크.8; Membrane, 9; Flake.
본 발명에 관한 박막 성막장치는 피처리기판이 설치된 진공챔버내로 방전용 가스를 도입하고, 기판과 대향해서 마련된 타겟에 부전하를 인가해서 플라즈마 방전시키고, 스퍼터링에 의해 기판표면에 박막을 형성하는 성막장치에 있어서, 기판을 탑재하기 위한 서셉터와; 서셉터 및 기판과 접촉하지 않고 기판주변부를 전체둘레에 걸쳐서 상측에서 덮는 프레임형상의 마스크를 구비하고, 서셉터 표면 주변부와 마스크 이면에 서로 소정 간격을 유지하면서 서로 맞물리는 제방형상의 볼록부를 마련한 것이다.The thin film forming apparatus according to the present invention introduces a gas for discharging into a vacuum chamber in which a substrate is to be processed, discharges plasma by applying a negative charge to a target provided opposite to the substrate, and forms a thin film on the surface of the substrate by sputtering. An apparatus, comprising: a susceptor for mounting a substrate; It is provided with a frame-shaped mask covering the upper portion of the substrate around the entire surface without contacting the susceptor and the substrate, and provided with embankment-shaped convex portions interlocking with each other while maintaining a predetermined distance from each other around the susceptor surface and the mask back surface. .
또, 서셉터와 마스크의 간격은 1∼5㎜로 하고, 피처리기판측에서 서셉터와 마스크의 간극을 통해서 챔버벽이 직접 보이지 않는 굴곡구조로 한 것이다.The distance between the susceptor and the mask is set to 1 to 5 mm, and the curved structure is such that the chamber wall is not directly visible through the gap between the susceptor and the mask on the substrate to be processed.
또, 서셉터 표면 주변부의 볼록부는 피처리기판 끝부에서 수 ㎜ 떨어진 위치에 마련되고, 기판 끝부와 볼록부 사이의 부분은 기판면보다 낮은 위치로 되도록 한 것이다.The convex portion at the periphery of the susceptor surface is provided at a position several mm away from the end of the substrate to be processed, and the portion between the substrate end and the convex portion is positioned lower than the substrate surface.
또, 서셉터 표면 주변부의 볼록부 및 마스크 이면의 볼록부는 각각 여러단씩 마련되고 그들이 서로 교대로 맞물려 있는 것이다.In addition, the convex portions at the periphery of the susceptor surface and the convex portions at the back of the mask are provided in multiple stages, and they are alternately engaged with each other.
또, 마스크 이면의 볼록부는 서셉터 표면 주변부에 마련된 피처리기판에 가장 가까운 볼록부보다 외주측에 마련되어 있는 것이다.Moreover, the convex part on the back surface of a mask is provided in the outer peripheral side rather than the convex part closest to the to-be-processed board | substrate provided in the periphery of the susceptor surface.
또, 본 발명에 관한 액정표시장치는 박막 트랜지스터를 포함하는 스위칭소자 및 이 스위칭소자를 거쳐서 각각 제어되는 표시소자를 갖는 TFT 어레이기판과 투명전극 및 컬러필터 등을 갖는 대향전극기판 사이에 액정이 끼워유지되어 이루어지는 액정표시장치로서, 상기한 것중 어느 하나의 박막 성막장치를 사용해서 기판 표면에 박막을 형성한 것이다.In addition, a liquid crystal display device according to the present invention includes a liquid crystal sandwiched between a TFT array substrate having a switching element including a thin film transistor and a display element controlled through the switching element and a counter electrode substrate having a transparent electrode and a color filter. As a held liquid crystal display device, a thin film is formed on the surface of a substrate by using any one of the above-described thin film deposition apparatuses.
〈실시예〉<Example>
실시예 1Example 1
이하, 본 발명의 실시예를 도면에 따라서 설명한다. 도 1은 본 발명의 실시예 1인 박막 성막장치의 구조를 도시한 단면도이다. 도면에 있어서, (1)은 진공챔버의 챔버벽, (2)는 피처리기판인 기판(3)을 탑재하기 위한 서셉터, (4)는 기판(3)과 대향해서 마련된 타겟, (5)는 서셉터(2) 및 기판(3)과 접촉하지 않고 기판(3) 주변부를 전체둘레에 걸쳐서 상측에서 덮는 프레임형상의 마스크, (6)은 접지차폐, (7)은 가스배관을 각각 나타내고 있다. 또, 본 실시예에서는 서셉터(2) 표면 주변부와 마스크(5) 이면에 서로 소정 간격을 유지하면서 서로 맞물리는 제방형상의 볼록부(2a), (5a)를 마련하고 있다. 또, 서셉터(2)와 마스크(5)의 간격은 1∼5㎜로 하고, 기판(3)측에서 서셉터(2)와 마스크(5)의 간극을 통해서 챔버벽(1)이 직접 보이지 않는 굴곡구조로 한 것이다.Best Mode for Carrying Out the Invention Embodiments of the present invention will be described below with reference to the drawings. 1 is a cross-sectional view showing the structure of a thin film deposition apparatus according to a first embodiment of the present invention. In the drawing, reference numeral 1 denotes a chamber wall of a vacuum chamber, 2 denotes a susceptor for mounting a substrate 3 which is a substrate to be processed, and 4 denotes a target provided opposite to the substrate 3; Denotes a frame-shaped mask which covers the periphery of the substrate 3 from the upper side without contacting the susceptor 2 and the substrate 3, (6) represents a ground shield, and (7) represents a gas pipe. . In this embodiment, the embankment-shaped convex portions 2a and 5a are provided on the periphery of the susceptor 2 surface and the back surface of the mask 5 to be engaged with each other while maintaining a predetermined distance from each other. In addition, the distance between the susceptor 2 and the mask 5 is set to 1 to 5 mm, and the chamber wall 1 is directly visible through the gap between the susceptor 2 and the mask 5 on the substrate 3 side. It does not have a curved structure.
본 실시예에 있어서의 박막 성막장치는 기판(3)이 설치된 진공챔버내로 가스배관(7)에서 방전용 가스를 도입하고, 기판(3)과 대향해서 마련된 타겟(4)에 부전하를 인가해서 플라즈마 방전시키고, 스퍼터링에 의해 기판(3) 표면에 박막을 형성하는 것이다.In the thin film deposition apparatus of this embodiment, the gas for discharge is introduced into the gas pipe 7 into the vacuum chamber in which the substrate 3 is installed, and a negative charge is applied to the target 4 provided to face the substrate 3. The plasma is discharged and a thin film is formed on the surface of the substrate 3 by sputtering.
본 실시예에서는 서셉터(2) 표면 주변부의 볼록부(2a)는 기판(3) 끝부에서 수 ㎜ 떨어진 위치에 마련되고, 기판(3) 끝부와 볼록부(2a) 사이의 부분은 기판(3) 면보다 낮은 위치로 되도록 하였다. 또, 마스크(5) 이면의 L자형의 볼록부(5a)는 서셉터(2)의 볼록부(2a)보다 외주측에 마련되고, 각각의 볼록부(2a) 및 볼록부(5a)는 서로 1∼5㎜의 간격을 유지하면서 서로 맞물려 있다.In the present embodiment, the convex portion 2a at the periphery of the surface of the susceptor 2 is provided at a position several mm away from the end of the substrate 3, and the portion between the end of the substrate 3 and the convex portion 2a is the substrate 3. ) To be positioned lower than the plane. Moreover, the L-shaped convex part 5a of the back surface of the mask 5 is provided in the outer peripheral side rather than the convex part 2a of the susceptor 2, and each convex part 2a and the convex part 5a mutually exist, They are engaged with each other while maintaining a spacing of 1 to 5 mm.
이와 같이 구성된 박막 성막장치에서는 성막시에 도 2에 도시한 바와 같이 막(8)은 주로 기판(3), 마스크(5) 표면에 부착되고, 기판(3)과 마스크(5)의 간극을 통해서 돌아들어간 막(8)은 서셉터(2) 표면 주변부의 볼록부(2a) 및 마스크(5) 이면의 볼록부(5a)에 부착하기 때문에, 챔버벽(1)이나 가스배관(7) 등의 내부구조물로의 부착이 억제된다. 이 때문에, 종래의 성막장치에서 발생하고 있던 막(8)의 박리에 의한 프레이크의 발생을 방지할 수 있다. 또, 서셉터(2) 및 마스크(5)는 표면처리에 의해 부착된 막(8)의 밀착강도가 커서 거의 박리되지 않기 때문에 부착된 막(8)이 소정 두께로 되어 프레이크로 되기 전에 정기적으로 교환하면 좋다. 또, 막(8)이 두꺼워진 경우에도 기판(3)과 서셉터(2)의 볼록부(2a)에는 수 ㎜의 간극을 마련하고 있고 또한 기판(3) 끝부와 볼록부(2a) 사이의 부분은 기판(3) 면보다 낮은 위치로 하고 있기 때문에 볼록부(2a)에 부착된 막(8)이 박리되어도 기판(3)에는 부착되지 않는다.In the thin film deposition apparatus configured as described above, the film 8 is mainly attached to the surface of the substrate 3 and the mask 5 as shown in FIG. 2 at the time of film formation, and is formed through the gap between the substrate 3 and the mask 5. The returned film 8 adheres to the convex portion 2a at the periphery of the surface of the susceptor 2 and the convex portion 5a at the back of the mask 5, and thus, the chamber wall 1, the gas pipe 7, and the like. Attachment to the internal structure is suppressed. For this reason, generation | occurrence | production of the flake by peeling of the film | membrane 8 which occurred in the conventional film-forming apparatus can be prevented. In addition, since the susceptor 2 and the mask 5 are hardly peeled because the adhesion strength of the film 8 adhered by the surface treatment is large, the susceptor 2 and the mask 5 have a regular thickness before the film 8 becomes a predetermined thickness and becomes flake. Replace it. In addition, even when the film 8 becomes thick, a gap of several mm is provided in the convex portion 2a of the substrate 3 and the susceptor 2, and the gap between the end of the substrate 3 and the convex portion 2a is provided. Since the part is located at a position lower than the surface of the substrate 3, the film 8 does not adhere to the substrate 3 even if the film 8 attached to the convex portion 2a is peeled off.
이상과 같이, 본 실시예에 의하면, 서셉터(2) 표면 주변부와 마스크(5) 이면에 서로 소정 간격을 유지하면서 서로 맞물리는 제방형상의 볼록부(2a), (5a)를 마련했으므로, 성막시에 기판(3)과 마스크(5)의 간극을 통해서 돌아들어간 막(8)이 서셉터(2)의 볼록부(2a) 및 마스크(5)의 볼록부(5a)에 부착하는 것에 의해, 챔버벽(1)이나 가스배관(7) 등의 내부구조물로의 막의 부착이 억제되고, 부착막의 박리에 의한 프레이크의 발생을 방지할 수 있다. 이 때문에, 프레이크에 기인하는 패턴결함 등의 불량의 발생이 억제되고 제품의 양품률이 향상한다.As described above, according to this embodiment, since the embankment-like convex portions 2a and 5a which are engaged with each other while maintaining a predetermined distance from each other on the periphery of the susceptor 2 surface and the back surface of the mask 5 are formed, the film formation is performed. By attaching the film 8 which has returned through the gap between the substrate 3 and the mask 5 to the convex portion 2a of the susceptor 2 and the convex portion 5a of the mask 5, The adhesion of the film to internal structures such as the chamber wall 1 and the gas pipe 7 can be suppressed, and generation of flakes due to peeling of the adhesion film can be prevented. For this reason, generation | occurrence | production of defects, such as a pattern defect resulting from a flake, is suppressed and the yield of a product improves.
또한, 본 실시예에 있어서의 박막 성막장치는 박막 트랜지스터를 포함하는 스위칭소자 및 이 스위칭소자를 거쳐서 각각 제어되는 표시소자를 갖는 TFT어레이기판과 투명전극 및 컬러필터 등을 갖는 대향전극기판 사이에 액정이 끼워유지되어 이루어지는 액정표시장치의 제조에 사용된다. 본 실시예에 있어서의 박막 성막장치를 사용해서 기판표면에 박막이 형성된 액정표시장치는 패턴결함의 발생이 억제되기 때문에 고품질의 액정표시장치를 높은 양품률로 얻을 수 있게 된다.Further, the thin film deposition apparatus of this embodiment includes a liquid crystal between a TFT array substrate having a switching element including a thin film transistor and a display element controlled through the switching element, and a counter electrode substrate having a transparent electrode, a color filter, and the like. It is used to manufacture the liquid crystal display device which is held. In the liquid crystal display device in which a thin film is formed on the substrate surface by using the thin film deposition apparatus in this embodiment, occurrence of pattern defects can be suppressed, so that a high quality liquid crystal display device can be obtained at a high yield.
실시예 2Example 2
도 3은 본 실시예 2인 박막 성막장치를 도시한 부분확대단면도이다. 도면에 있어서, (2a), (2b)는 서셉터(2) 표면 주변부에 마련된 제방형상의 볼록부, (5a), (5b)는 마스크(5) 이면에 마련된 제방형상의 볼록부로서, 서셉터(2)의 볼록부(2a), (2b)와 마스크(5) 이면의 볼록부(5a), (5b)는 서로 소정의 간격을 유지하면서 서로 맞물려 있다. 또한, 도면중 동일 또는 상당부분에는 동일부호를 붙이고 설명을 생략한다.3 is a partially enlarged cross-sectional view showing the thin film deposition apparatus of Example 2. FIG. In the figure, (2a) and (2b) are embankment-shaped convex portions provided on the periphery of the susceptor 2 surface, and (5a) and (5b) are embankment-shaped convex portions provided on the back surface of the mask (5). The convex portions 2a and 2b of the acceptor 2 and the convex portions 5a and 5b on the back of the mask 5 are engaged with each other while maintaining a predetermined distance from each other. In addition, the same code | symbol is attached | subjected to the same or equivalent part in drawing, and description is abbreviate | omitted.
본 실시예에서는 서셉터(2) 표면 주변부와 마스크(5) 이면에 각각 2단씩 제방형상의 볼록부((2a), (2b), (5a), (5b))를 마련하고, 그들이 서로 교대로 맞물리도록 배치하였다. 마스크(5) 이면의 볼록부(5a), (5b)는 서셉터(2) 표면 주변부에 마련된 피처리기판(3)에 가장 가까운 볼록부(2a)보다도 외주측에 마련되어 있다. 또, 서셉터(2)의 볼록부(2a)는 기판(3) 끝부에서 수 ㎜ 떨어진 위치에 마련되고, 기판(3) 끝부와 볼록부(2a) 사이의 부분은 기판(3)면보다 낮은 위치로 되도록 하였다. 또한, 본 실시예에서는 서셉터(2) 및 마스크(5)의 볼록부를 각각 2단씩 마련했지만, 3단 이상의 여러단씩 마련하고, 그들이 서로 교대로 맞물리도록 해도 좋다.In this embodiment, embankment-shaped convex portions (2a, 2b, 5a, 5b) are provided on the periphery of the susceptor 2 surface and the back of the mask 5, respectively, and they alternate with each other. To interlock. The convex parts 5a and 5b on the back surface of the mask 5 are provided on the outer circumferential side of the convex part 2a closest to the substrate 3 to be processed provided on the surface periphery of the susceptor 2. Moreover, the convex part 2a of the susceptor 2 is provided in the position several mm apart from the edge part of the board | substrate 3, and the part between the board | substrate 3 edge part and the convex part 2a is lower than the board | substrate 3 surface. It was made to be. In the present embodiment, two convex portions of the susceptor 2 and the mask 5 are provided in two stages, respectively, but three or more stages may be provided, and they may be engaged with each other alternately.
이상과 같이, 본 실시예에 의하면, 서셉터(2) 표면 주변부와 마스크(5) 이면의 제방형상의 볼록부를 다단 구조로 하는 것에 의해, 상기 실시예 1보다 더욱 성막시의 막(8)의 트랙효과가 높아져 챔버벽(1)이나 가스배관(7) 등의 내부구조물로의 막(8)의 부착을 더욱 억제할 수 있다.As described above, according to the present embodiment, the multi-layered structure of the periphery of the susceptor 2 surface and the embankment-shaped convex portions on the back of the mask 5 has a multistage structure, so that the film 8 at the time of film formation is more than that of the first embodiment. As the track effect is increased, adhesion of the film 8 to the internal structure such as the chamber wall 1 or the gas pipe 7 can be further suppressed.
이상과 같이, 본 발명에 의하면 기판을 탑재하기 위한 서셉터와 서셉터 및 기판과 접촉하지 않고 기판 주변부를 전체둘레에 걸쳐서 상측에서 덮는 프레임형상의 마스크를 구비한 박막 성막장치에 있어서, 서셉터 표면 주변부와 마스크 이면에 서로 소정 간격을 유지하면서 서로 맞물리는 제방형상의 볼록부를 마련했으므로, 성막시에 기판과 마스크의 간극을 통해서 돌아들어간 막이 서셉터 및 마스크에 마련된 볼록부에 부착하는 것에 의해 챔버벽이나 가스배관 등의 내부구조물로의 막의 부착이 억제되고, 부착막의 박리에 의한 프레이크의 발생을 방지할 수 있고, 패턴결함의 발생이 억제되고 제품의 양품률이 향상한다.As described above, according to the present invention, in the thin film deposition apparatus having a susceptor for mounting a substrate, a susceptor and a frame-shaped mask covering the substrate peripheral portion from the upper side without contacting the substrate, the susceptor surface is provided. Since the embankment-shaped convex part which interlock | engages with each other is provided in the peripheral part and the back surface, maintaining the predetermined space | interval mutually, the film | membrane which returned through the clearance gap between a board | substrate and a mask at the time of film deposition adheres to the convex part provided in the susceptor and the mask, and a chamber wall The adhesion of the film to internal structures such as gas pipes is suppressed, the generation of flakes due to peeling of the adhesion film can be prevented, the occurrence of pattern defects is suppressed, and the yield of the product is improved.
또, 본 발명에 있어서의 성막장치를 사용해서 박막을 형성하는 것에 의해 패턴결함이 적고 고품질의 액정표시장치가 얻어진다.In addition, by forming the thin film using the film forming apparatus according to the present invention, a high-quality liquid crystal display device with less pattern defects can be obtained.
Claims (6)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07901299A JP4101966B2 (en) | 1999-03-24 | 1999-03-24 | Thin film deposition equipment |
| JP1999-79012 | 1999-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000076858A true KR20000076858A (en) | 2000-12-26 |
Family
ID=13678046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000013000A KR20000076858A (en) | 1999-03-24 | 2000-03-15 | thin film forming device and liquid crystal display having thin film formed using the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4101966B2 (en) |
| KR (1) | KR20000076858A (en) |
| TW (1) | TW581818B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| KR101250237B1 (en) * | 2006-06-30 | 2013-04-04 | 엘지디스플레이 주식회사 | Susceptor and sputtering apparatus applying the same |
| PL1998366T3 (en) | 2007-04-27 | 2010-12-31 | Applied Materials Inc | Substrate processing device and method of placing a substrate |
| KR101226478B1 (en) | 2011-02-01 | 2013-01-25 | (주)이루자 | Sputtering mask and sputtering apparatus using the same |
| JP5654939B2 (en) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | Deposition equipment |
| JP6298147B2 (en) * | 2014-02-19 | 2018-03-20 | 堺ディスプレイプロダクト株式会社 | Deposition equipment |
| CN109023287B (en) * | 2017-06-08 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59118883A (en) * | 1982-12-27 | 1984-07-09 | Fujitsu Ltd | Sputtering device |
| KR940004712A (en) * | 1992-08-11 | 1994-03-15 | 제임스 조셉 드롱 | Method for preparing a shield to reduce particles in a physical deposition chamber |
| JPH11315376A (en) * | 1998-05-01 | 1999-11-16 | Anelva Corp | Ionization sputtering device |
| JP2000045069A (en) * | 1998-07-29 | 2000-02-15 | Matsushita Electric Ind Co Ltd | Magnetron sputtering device and sputtering method |
-
1999
- 1999-03-24 JP JP07901299A patent/JP4101966B2/en not_active Expired - Fee Related
-
2000
- 2000-03-15 TW TW089104683A patent/TW581818B/en not_active IP Right Cessation
- 2000-03-15 KR KR1020000013000A patent/KR20000076858A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59118883A (en) * | 1982-12-27 | 1984-07-09 | Fujitsu Ltd | Sputtering device |
| KR940004712A (en) * | 1992-08-11 | 1994-03-15 | 제임스 조셉 드롱 | Method for preparing a shield to reduce particles in a physical deposition chamber |
| JPH11315376A (en) * | 1998-05-01 | 1999-11-16 | Anelva Corp | Ionization sputtering device |
| JP2000045069A (en) * | 1998-07-29 | 2000-02-15 | Matsushita Electric Ind Co Ltd | Magnetron sputtering device and sputtering method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW581818B (en) | 2004-04-01 |
| JP4101966B2 (en) | 2008-06-18 |
| JP2000273626A (en) | 2000-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4960719A (en) | Method for producing amorphous silicon thin film transistor array substrate | |
| KR100615375B1 (en) | Sputtering device | |
| JPH11317397A (en) | Processing device | |
| KR20100094404A (en) | Tft-lcd array substrate and manufacturing method thereof | |
| CN101825815A (en) | TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof | |
| KR20000076858A (en) | thin film forming device and liquid crystal display having thin film formed using the same | |
| US20020011406A1 (en) | Mask for sputtering | |
| JP2001059971A (en) | Liquid crystal display device | |
| TWI433233B (en) | Etching apparatus for edges of substrate | |
| CN108666265B (en) | Thin film transistor substrate and preparation method thereof | |
| JP2000091244A (en) | Plasma processing device and semiconductor device manufactured by the same, and active matrix substrate constituted by the semiconductor device and liquid crystal display device using the active matrix substrate | |
| US6544809B2 (en) | Method of manufacturing an array substrate for use in a reflective liquid crystal display device | |
| US6836301B1 (en) | Liquid crystal display device | |
| KR20010058623A (en) | Dry Etching Apparatus | |
| JPH08288223A (en) | Manufacture of thin film | |
| JP2003037269A (en) | Manufacturing method for thin film transistor | |
| JPH05166728A (en) | Plasma cvd apparatus | |
| US20060077312A1 (en) | TFD LCD device with high aperture ratio | |
| JP2000199912A (en) | Active matrix type liquid crystal display device and its production | |
| JPH02125231A (en) | Liquid crystal display device | |
| JP2004083984A (en) | Sputtering system | |
| JPH04330723A (en) | Semiconductor manufacturing apparatus and manufacture of semiconductor device | |
| KR100351873B1 (en) | Liquid crystal display and manufacturing method of the same | |
| JPH10306369A (en) | Sputtering target and method for detecting oversputtering using this | |
| JPH01165764A (en) | Bias sputtering device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |