JP4101966B2 - Thin film deposition equipment - Google Patents

Thin film deposition equipment Download PDF

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Publication number
JP4101966B2
JP4101966B2 JP07901299A JP7901299A JP4101966B2 JP 4101966 B2 JP4101966 B2 JP 4101966B2 JP 07901299 A JP07901299 A JP 07901299A JP 7901299 A JP7901299 A JP 7901299A JP 4101966 B2 JP4101966 B2 JP 4101966B2
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substrate
susceptor
mask
thin film
periphery
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JP2000273626A (en
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輝重 日野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP07901299A priority Critical patent/JP4101966B2/en
Priority to TW089104683A priority patent/TW581818B/en
Priority to KR1020000013000A priority patent/KR20000076858A/en
Publication of JP2000273626A publication Critical patent/JP2000273626A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation

Description

【０００１】
【発明の属する技術分野】
本発明は、薄膜の成膜装置に関し、特に、チャンバー壁や内部構造物への膜の付着を抑制し、これらに付着した膜の剥離による発塵を防止する薄膜の成膜装置の構造およびこれを用いて薄膜が形成された液晶表示装置に関する。
【０００２】
【従来の技術】
図４は、従来の薄膜の成膜装置の構造を示す断面図である。図において、１は真空チャンバーのチャンバー壁、１２は被処理基板である基板３を載置するためのサセプター、４は基板３と対向して設けられたターゲット、１５はサセプター１２及び基板３と接触せずに基板３周辺部を全周にわたって上側より覆う枠状のマスク、６はグランドシールド、７はガス配管をそれぞれ示している。
従来装置による薄膜の成膜方法を説明する。真空チャンバー内のサセプター１２に基板３を載置し、ガス配管７を通してチャンバー内に放電用ガスを導入する。基板３と対向するターゲット４に負電荷を印加してプラズマ放電させ、スパッタリングにより基板３表面に薄膜を形成する。サセプター１２とターゲット４の間には、基板３周囲を覆う枠状のマスク１５が配置され、基板３周辺部への膜の付着を防止している。なお、図５は、ターゲット４側からマスク１５を見た時の正面図である。
【０００３】
【発明が解決しようとする課題】
上記のような従来の成膜装置においては、基板３表面における異常放電防止のため、マスク１５と基板３が接触しないように１ｍｍ以上の間隔をあける必要があった。また、基板３周辺部まで成膜する場合には、マスク１５の開口面積を広くとり、マスク１５と基板３が重なり合う量を小さくする必要があった。このため、成膜時には、図６に示すように、膜８が基板３とマスク１５の隙間を通って、マスク１５裏面側やサセプター１２の周辺部及びガス配管７等の構造物や、チャンバー壁１に回り込んで付着し、ある程度の厚さになると膜８がフレーク９となって剥がれ、これらが基板３上に付着するとパターン欠陥等を引き起こし、製品の歩留まりを低下させるという問題があった。例えば、上記の従来装置を用いて薄膜が形成された液晶表示装置では、図７に示すようなパターン欠陥が発生し易く、高品質な液晶表示装置を得ることが困難であった。図７において（ａ）は正常な配線、（ｂ）は歩留まり低下の原因となる断線、（ｃ）（ｄ）は、品質低下の原因となるパターン異常を示している。
【０００４】
本発明は、上記のような問題点を解消するためになされたもので、薄膜の成膜装置のチャンバー壁や内部構造物への膜の付着を抑制し、これらに付着した膜の剥がれによる発塵を防止するとともにパターン欠陥のない高品質な液晶表示装置を得ることを目的とする。
【０００５】
【課題を解決するための手段】
本発明に係わる薄膜の成膜装置は、被処理基板が設置された真空チャンバー中に放電用ガスを導入し、基板と対向して設けられたターゲットに負電荷を印加してプラズマ放電させ、スパッタリングにより基板表面に薄膜を形成する成膜装置において、基板を載置するためのサセプターと、サセプター及び基板と接触せずに基板周辺部を全周にわたって上側より覆う枠状のマスクを備え、サセプター表面周辺部とマスク裏面に、互いに所定の間隔を保ちながら噛み合う堤防状の凸部を設けたものである。
また、サセプターとマスクの間隔は１〜５ｍｍとし、被処理基板側からサセプターとマスクの隙間を通してチャンバー壁が直接見えない屈曲構造としたものである。
【０００６】
また、サセプター表面周辺部の凸部は、被処理基板端部よりも外周側に設けられ、基板端部と凸部の間の部分は、基板面よりも低い位置となるようにしたものである。
また、サセプター表面周辺部の凸部及びマスク裏面の凸部は、それぞれ複数段ずつ設けられ、それらが交互に噛み合っているものである。
さらに、マスク裏面の凸部は、サセプター表面周辺部に設けられた被処理基板に最も近い凸部よりも外周側に設けられているものである。
【０００７】
【発明の実施の形態】
実施の形態１．
以下に、本発明の実施の形態を図面に基づいて説明する。図１は、本発明の実施の形態１である薄膜の成膜装置の構造を示す断面図である。図において、１は真空チャンバーのチャンバー壁、２は被処理基板である基板３を載置するためのサセプター、４は基板３と対向して設けられたターゲット、５はサセプター２及び基板３と接触せずに基板３周辺部を全周にわたって上側より覆う枠状のマスク、６はグランドシールド、７はガス配管をそれぞれ示している。また、本実施の形態では、サセプター２表面周辺部とマスク５裏面に、互いに所定の間隔を保ちながら噛み合う堤防状の凸部２ａ、５ａを設けている。さらに、サセプター２とマスク５の間隔は１〜５ｍｍとし、基板３側からサセプター２とマスク５の隙間を通してチャンバー壁１が直接見えない屈曲構造としたものである。
【０００８】
本実施の形態における薄膜の成膜装置は、基板３が設置された真空チャンバー中にガス配管７より放電用ガスを導入し、基板３と対向して設けられたターゲット４に負電荷を印加してプラズマ放電させ、スパッタリングにより基板３表面に薄膜を形成するものである。
本実施の形態では、サセプター２表面周辺部の凸部２ａは、基板３端部よりも外周側の基板端部３から数ｍｍ隔てた位置に設けられ、基板３端部と凸部２ａの間の部分は、基板３面よりも低い位置となるようにした。また、マスク５裏面のＬ字型の凸部５ａは、サセプター２の凸部２ａよりも外周側に設けられ、それぞれの凸部２ａ及び凸部５ａは互いに１〜５ｍｍの間隔を保ちながら噛み合っている。
【０００９】
このように構成された薄膜の成膜装置では、成膜時に、図２に示すように、膜８は、主に基板３、マスク５表面に付着し、基板３とマスク５の隙間を通って回り込んだ膜８は、サセプター２表面周辺部の凸部２ａ及びマスク５裏面の凸部５ａに付着するため、チャンバー壁１やガス配管７等の内部構造物への付着が抑制される。このため、従来の成膜装置で発生していた膜８の剥がれによるフレークの発生を防止することができる。また、サセプター２及びマスク５は、表面処理により、付着した膜８の密着強度が大きく剥がれにくいため、付着した膜８が所定の厚さになってフレークとなる前に、定期的に交換すればよい。さらに、膜８が厚くなった場合でも、基板３とサセプター２の凸部２ａには数ｍｍの隙間を設けており、且つ基板３端部と凸部２ａの間の部分は、基板３面よりも低い位置としているため、凸部２ａに付着した膜８が剥がれても基板３には付着しない。
【００１０】
以上のように、本実施の形態によれば、サセプター２表面周辺部とマスク５裏面に、互いに所定の間隔を保ちながら噛み合う堤防状の凸部２ａ、５ａを設けたので、成膜時に基板３とマスク５の隙間を通って回り込んだ膜８が、サセプター２の凸部２ａ及びマスク５の凸部５ａに付着することにより、チャンバー壁１やガス配管７等の内部構造物への膜の付着が抑制され、付着膜の剥がれによるフレークの発生を防止することができる。このため、フレークに起因するパターン欠陥等の不良の発生が抑制され、製品の歩留まりが向上する。
なお、本実施の形態における薄膜の成膜装置は、薄膜トランジスタを含むスイッチング素子およびこのスイッチング素子を経てそれぞれ制御される表示素子を有するＴＦＴアレイ基板と、透明電極およびカラーフィルタ等を有する対向電極基板の間に液晶が挟持されてなる液晶表示装置の製造に用いられる。本実施の形態における薄膜の成膜装置を用いて、基板表面に薄膜が形成された液晶表示装置は、パターン欠陥の発生が抑制されるため、高品質な液晶表示装置を高い歩留まりで得ることが可能となる。
【００１１】
実施の形態２．
図３は、本発明の実施の形態２である薄膜の成膜装置を示す部分拡大断面図である。図において２ａ、２ｂは、サセプター２表面周辺部に設けられた堤防状の凸部、５ａ、５ｂはマスク５裏面に設けられた堤防状の凸部であり、サセプター２の凸部２ａ、２ｂとマスク５裏面の凸部５ａ、５ｂは、互いに所定の間隔を保ちながら噛み合っている。なお、図中、同一、相当部分には同一符号を付し、説明を省略する。
本実施の形態では、サセプター２表面周辺部とマスク５裏面に、それぞれ２段ずつ堤防状の凸部（２ａ、２ｂ、５ａ、５ｂ）を設け、それらが交互に噛み合うように配置した。マスク５裏面の凸部５ａ、５ｂは、サセプター２表面周辺部に設けられた被処理基板３に最も近い凸部２ａよりも外周側に設けられている。また、サセプター２の凸部２ａは、基板３端部から数ｍｍ隔てた位置に設けられ、基板３端部と凸部２ａの間の部分は、基板３面よりも低い位置となるようにした。なお、本実施の形態では、サセプター２及びマスク５の凸部をそれぞれ２段ずつ設けたが、３段以上の複数段ずつ設け、それらが交互に噛み合うようにしても良い。
以上のように、本実施の形態によれば、サセプター２表面周辺部とマスク５裏面の堤防状の凸部を多段構造とすることにより、上記実施の形態１よりもさらに成膜時の膜８のトラップ効果が高まり、チャンバー壁１やガス配管７等の内部構造物への膜８の付着をさらに抑制することができる。
【００１２】
【発明の効果】
以上のように、本発明によれば、基板を載置するためのサセプターと、サセプター及び基板と接触せずに基板周辺部を全周にわたって上側より覆う枠状のマスクを備えた薄膜の成膜装置において、サセプター表面周辺部とマスク裏面に、互いに所定の間隔を保ちながら噛み合う堤防状の凸部を設けたので、成膜時に基板とマスクの隙間を通って回り込んだ膜が、サセプター及びマスクに設けられた凸部に付着することにより、チャンバー壁やガス配管等の内部構造物への膜の付着が抑制され、付着膜の剥がれによるフレークの発生を防止することができ、パターン欠陥の発生が抑制され、製品の歩留まりが向上する。
また、本発明における成膜装置を用いて薄膜を形成することにより、パターン欠陥が少なく、高品質な液晶表示装置が得られる。
【図面の簡単な説明】
【図１】 本発明の実施の形態１である薄膜の成膜装置の構造を示す断面図である。
【図２】 本発明の実施の形態１である薄膜の成膜装置における成膜時の膜の付着状況を説明する部分拡大断面図である。
【図３】 本発明の実施の形態２である薄膜の成膜装置を示す部分拡大断面図である。
【図４】 従来の薄膜の成膜装置の構造を示す断面図である。
【図５】 従来の薄膜の成膜装置におけるマスクをターゲット側から見た時の正面図である。
【図６】 従来の薄膜の成膜装置における成膜時の膜の付着状況を説明する部分拡大断面図である。
【図７】 従来の薄膜の成膜装置を用いて形成された配線のパターン欠陥を示す図である。
【符号の説明】
１ チャンバー壁、２、１２ サセプター、２ａ、２ｂ 凸部、３ 基板、
４ ターゲット、５、１５ マスク、５ａ、５ｂ 凸部、
６ グランドシールド、７ ガス配管、８ 膜、９ フレーク。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thin film deposition apparatus, and more particularly to a structure of a thin film deposition apparatus that suppresses adhesion of a film to a chamber wall or an internal structure and prevents dust generation due to peeling of the film adhered to the chamber wall and internal structure. The present invention relates to a liquid crystal display device in which a thin film is formed.
[0002]
[Prior art]
FIG. 4 is a cross-sectional view showing the structure of a conventional thin film deposition apparatus. In the figure, 1 is a chamber wall of a vacuum chamber, 12 is a susceptor for placing a substrate 3 as a substrate to be processed, 4 is a target provided facing the substrate 3, and 15 is in contact with the susceptor 12 and the substrate 3. A frame-shaped mask that covers the periphery of the substrate 3 from the upper side without surroundings, 6 is a ground shield, and 7 is a gas pipe.
A method for forming a thin film using a conventional apparatus will be described. The substrate 3 is placed on the susceptor 12 in the vacuum chamber, and a discharge gas is introduced into the chamber through the gas pipe 7. A negative charge is applied to the target 4 facing the substrate 3 to cause plasma discharge, and a thin film is formed on the surface of the substrate 3 by sputtering. Between the susceptor 12 and the target 4, a frame-shaped mask 15 that covers the periphery of the substrate 3 is disposed to prevent the film from adhering to the periphery of the substrate 3. FIG. 5 is a front view when the mask 15 is viewed from the target 4 side.
[0003]
[Problems to be solved by the invention]
In the conventional film forming apparatus as described above, it is necessary to provide an interval of 1 mm or more so that the mask 15 and the substrate 3 do not contact with each other in order to prevent abnormal discharge on the surface of the substrate 3. Further, when forming the film up to the periphery of the substrate 3, it is necessary to increase the opening area of the mask 15 and to reduce the amount of overlap between the mask 15 and the substrate 3. Therefore, at the time of film formation, as shown in FIG. 6, the film 8 passes through the gap between the substrate 3 and the mask 15, the structure on the back side of the mask 15, the periphery of the susceptor 12, the gas pipe 7, etc. When the film 8 wraps around and adheres and becomes a certain thickness, the film 8 becomes flakes 9 and peels off. When these films adhere to the substrate 3, a pattern defect or the like is caused and the yield of the product is lowered. For example, in a liquid crystal display device in which a thin film is formed using the above-described conventional device, pattern defects as shown in FIG. 7 are likely to occur, and it is difficult to obtain a high-quality liquid crystal display device. In FIG. 7, (a) shows normal wiring, (b) shows a disconnection causing a decrease in yield, and (c) and (d) show a pattern abnormality causing a reduction in quality.
[0004]
The present invention has been made to solve the above-described problems, and suppresses the adhesion of the film to the chamber wall or internal structure of the thin film deposition apparatus, and the occurrence of the peeling due to the peeling of the film adhered to these. An object of the present invention is to obtain a high-quality liquid crystal display device that prevents dust and has no pattern defects.
[0005]
[Means for Solving the Problems]
The thin film deposition apparatus according to the present invention introduces a discharge gas into a vacuum chamber in which a substrate to be processed is installed, applies a negative charge to a target provided opposite to the substrate, and causes plasma discharge to perform sputtering. In the film forming apparatus for forming a thin film on the surface of the substrate, the susceptor surface is provided with a susceptor for mounting the substrate, and a frame-shaped mask that covers the periphery of the substrate from above without contacting the susceptor and the substrate. Embankment-shaped convex portions that mesh with each other while maintaining a predetermined interval are provided on the peripheral portion and the back surface of the mask.
The distance between the susceptor and the mask is 1 to 5 mm, and the chamber wall is bent from the substrate to be processed through the gap between the susceptor and the mask.
[0006]
Further, the convex portion at the periphery of the susceptor surface is provided on the outer peripheral side with respect to the processed substrate end, and the portion between the substrate end and the convex portion is positioned lower than the substrate surface. .
Moreover, the convex part of the peripheral part of a susceptor surface and the convex part of a mask back surface are provided in multiple steps, respectively, and they are meshing alternately.
Further, the convex portion on the back surface of the mask is provided on the outer peripheral side of the convex portion closest to the substrate to be processed provided in the peripheral portion of the susceptor surface .
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1 FIG.
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the structure of a thin film forming apparatus according to Embodiment 1 of the present invention. In the figure, 1 is a chamber wall of a vacuum chamber, 2 is a susceptor for placing a substrate 3 to be processed, 4 is a target provided opposite to the substrate 3, and 5 is in contact with the susceptor 2 and the substrate 3. A frame-shaped mask that covers the periphery of the substrate 3 from the upper side without surroundings, 6 is a ground shield, and 7 is a gas pipe. In the present embodiment, embankment-like convex portions 2a and 5a are provided on the periphery of the surface of the susceptor 2 and the back surface of the mask 5 so as to mesh with each other while maintaining a predetermined distance therebetween. Further, the interval between the susceptor 2 and the mask 5 is 1 to 5 mm, and the chamber wall 1 is not visible through the gap between the susceptor 2 and the mask 5 from the substrate 3 side.
[0008]
The thin film deposition apparatus in the present embodiment introduces a discharge gas from a gas pipe 7 into a vacuum chamber in which a substrate 3 is installed, and applies a negative charge to a target 4 provided facing the substrate 3. Plasma discharge, and a thin film is formed on the surface of the substrate 3 by sputtering.
In the present embodiment, the convex portion 2a on the periphery of the surface of the susceptor 2 is provided at a position several mm away from the substrate end 3 on the outer peripheral side of the end of the substrate 3, and between the end of the substrate 3 and the convex 2a. This portion was set at a position lower than the surface of the substrate 3. Further, the L-shaped convex portion 5a on the back surface of the mask 5 is provided on the outer peripheral side with respect to the convex portion 2a of the susceptor 2, and the convex portions 2a and the convex portions 5a are engaged with each other while maintaining an interval of 1 to 5 mm. Yes.
[0009]
In the thin film deposition apparatus configured as described above, as illustrated in FIG. 2, the film 8 adheres mainly to the surfaces of the substrate 3 and the mask 5 and passes through the gap between the substrate 3 and the mask 5 during the deposition. Since the wraparound film 8 adheres to the convex part 2a in the peripheral part of the surface of the susceptor 2 and the convex part 5a on the back surface of the mask 5, adhesion to the internal structure such as the chamber wall 1 and the gas pipe 7 is suppressed. For this reason, generation | occurrence | production of the flake by peeling of the film | membrane 8 which generate | occur | produced with the conventional film-forming apparatus can be prevented. Further, the susceptor 2 and the mask 5 are subjected to surface treatment so that the adhesion strength of the attached film 8 is large and difficult to peel off. Therefore, if the attached film 8 becomes a predetermined thickness and becomes flakes, it may be replaced periodically. Good. Furthermore, even when the film 8 becomes thicker, a gap of several mm is provided between the substrate 3 and the convex portion 2a of the susceptor 2, and the portion between the end of the substrate 3 and the convex portion 2a is more than the surface of the substrate 3 Therefore, even if the film 8 attached to the convex portion 2a is peeled off, it is not attached to the substrate 3.
[0010]
As described above, according to the present embodiment, the embankment-shaped convex portions 2a and 5a that mesh with each other while maintaining a predetermined distance are provided on the periphery of the front surface of the susceptor 2 and the back surface of the mask 5, so The film 8 that has passed through the gap between the mask 5 and the mask 5 adheres to the convex part 2a of the susceptor 2 and the convex part 5a of the mask 5, so that the film on the internal structure such as the chamber wall 1 and the gas pipe 7 is formed. Adhesion is suppressed and generation of flakes due to peeling of the adhesion film can be prevented. For this reason, generation | occurrence | production of defects, such as a pattern defect resulting from a flake, is suppressed, and the yield of a product improves.
Note that the thin film deposition apparatus in this embodiment includes a TFT array substrate having a switching element including a thin film transistor and a display element controlled through the switching element, and a counter electrode substrate having a transparent electrode, a color filter, and the like. It is used for manufacturing a liquid crystal display device in which liquid crystal is sandwiched between them. In the liquid crystal display device in which a thin film is formed on the substrate surface using the thin film formation apparatus in this embodiment mode, generation of pattern defects is suppressed, so that a high-quality liquid crystal display device can be obtained with high yield. It becomes possible.
[0011]
Embodiment 2. FIG.
FIG. 3 is a partially enlarged sectional view showing a thin film forming apparatus according to the second embodiment of the present invention. In the figure, 2a and 2b are embankment-like convex portions provided on the periphery of the surface of the susceptor 2, and 5a and 5b are embankment-like convex portions provided on the back surface of the mask 5, and the convex portions 2a and 2b of the susceptor 2 The convex portions 5a and 5b on the back surface of the mask 5 are engaged with each other while maintaining a predetermined interval. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof is omitted.
In the present embodiment, bank-shaped convex portions (2a, 2b, 5a, 5b) are provided in two steps on the periphery of the surface of the susceptor 2 and the back surface of the mask 5, respectively, and are arranged so that they are alternately meshed. The convex portions 5a and 5b on the back surface of the mask 5 are provided on the outer peripheral side with respect to the convex portion 2a closest to the substrate to be processed 3 provided in the peripheral portion of the susceptor 2 surface. The convex portion 2a of the susceptor 2 is provided at a position several mm away from the end of the substrate 3, and the portion between the end of the substrate 3 and the convex portion 2a is positioned lower than the surface of the substrate 3. . In the present embodiment, the convex portions of the susceptor 2 and the mask 5 are provided in two stages, but a plurality of stages of three or more stages may be provided so that they are alternately meshed.
As described above, according to the present embodiment, the ridge-like convex portions on the front surface of the susceptor 2 and the back surface of the mask 5 are formed in a multi-stage structure, so that the film 8 at the time of film formation is further increased than in the first embodiment. This increases the trapping effect and further suppresses the adhesion of the film 8 to internal structures such as the chamber wall 1 and the gas pipe 7.
[0012]
【The invention's effect】
As described above, according to the present invention, a thin film including a susceptor for mounting a substrate and a frame-like mask that covers the entire periphery of the substrate from above without contacting the susceptor and the substrate is formed. In the apparatus, since the embankment-shaped convex portions that mesh with each other while maintaining a predetermined distance are provided on the peripheral portion of the susceptor surface and the back surface of the mask, the film that wraps around through the gap between the substrate and the mask during film formation becomes the susceptor and mask. By adhering to the projections provided in the film, the adhesion of the film to the internal structure such as the chamber wall and gas piping is suppressed, and the occurrence of flakes due to peeling of the adhered film can be prevented, and the occurrence of pattern defects Is suppressed and the yield of the product is improved.
Further, by forming a thin film using the film forming apparatus of the present invention, a high-quality liquid crystal display device with few pattern defects can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing the structure of a thin film deposition apparatus according to a first embodiment of the present invention.
FIG. 2 is a partially enlarged cross-sectional view for explaining the state of film adhesion during film formation in the thin film forming apparatus according to the first embodiment of the present invention.
FIG. 3 is a partially enlarged sectional view showing a thin film forming apparatus according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing the structure of a conventional thin film deposition apparatus.
FIG. 5 is a front view of a mask in a conventional thin film deposition apparatus as viewed from the target side.
FIG. 6 is a partially enlarged cross-sectional view for explaining the state of film adhesion during film formation in a conventional thin film forming apparatus.
FIG. 7 is a diagram showing a pattern defect of a wiring formed using a conventional thin film forming apparatus.
[Explanation of symbols]
1 chamber wall, 2, 12 susceptor, 2a, 2b convex part, 3 substrate,
4 target, 5, 15 mask, 5a, 5b convex part,
6 Ground shield, 7 gas piping, 8 membranes, 9 flakes.

Claims (5)

被処理基板が設置された真空チャンバー中に放電用ガスを導入し、上記基板と対向して設けられたターゲットに負電荷を印加してプラズマ放電させ、スパッタリングにより上記基板表面に薄膜を形成する成膜装置において、上記基板を載置するためのサセプターと、上記サセプター及び上記基板と接触せずに上記基板周辺部を全周にわたって上側より覆う枠状のマスクを備え、上記サセプター表面周辺部と上記マスク裏面に、互いに所定の間隔を保ちながら噛み合う堤防状の凸部を設けたことを特徴とする薄膜の成膜装置。  A discharge gas is introduced into a vacuum chamber in which a substrate to be processed is placed, a negative charge is applied to a target provided opposite to the substrate to cause plasma discharge, and a thin film is formed on the substrate surface by sputtering. The film apparatus includes a susceptor for mounting the substrate, and a frame-shaped mask that covers the periphery of the substrate from above without contacting the susceptor and the substrate, and the periphery of the susceptor surface and the periphery of the substrate. A thin film deposition apparatus characterized in that a bank-like convex portion that meshes with each other while maintaining a predetermined interval is provided on the back surface of the mask. サセプターとマスクの間隔は１〜５ｍｍとし、被処理基板側から上記サセプターと上記マスクの隙間を通してチャンバー壁が直接見えない屈曲構造としたことを特徴とする請求項１記載の薄膜の成膜装置。  2. The thin film deposition apparatus according to claim 1, wherein the distance between the susceptor and the mask is 1 to 5 mm, and the chamber wall is not directly visible through the gap between the susceptor and the mask from the substrate to be processed. サセプター表面周辺部の凸部は、被処理基板端部よりも外周側に設けられ、上記基板端部と上記凸部の間の部分は、上記基板面よりも低い位置となるようにしたことを特徴とする請求項１または請求項２記載の薄膜の成膜装置。The convex part on the periphery of the susceptor surface is provided on the outer peripheral side from the edge of the substrate to be processed, and the part between the substrate edge and the convex part is positioned lower than the substrate surface. The thin film deposition apparatus according to claim 1 or 2, characterized in that: サセプター表面周辺部の凸部及びマスク裏面の凸部は、それぞれ複数段ずつ設けられ、それらが交互に噛み合っていることを特徴とする請求項１〜請求項３のいずれか一項記載の薄膜の成膜装置。  The thin film according to any one of claims 1 to 3, wherein a plurality of protrusions on the periphery of the susceptor surface and a protrusion on the back surface of the mask are provided, and the protrusions alternately mesh with each other. Deposition device. マスク裏面の凸部は、サセプター表面周辺部に設けられた被処理基板に最も近い凸部よりも外周側に設けられていることを特徴とする請求項１〜請求項４のいずれか一項記載の薄膜の成膜装置。 The convex portion on the back surface of the mask is provided on the outer peripheral side of the convex portion closest to the substrate to be processed provided in the peripheral portion of the susceptor surface. Thin film deposition equipment .
JP07901299A 1999-03-24 1999-03-24 Thin film deposition equipment Expired - Fee Related JP4101966B2 (en)

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KR1020000013000A KR20000076858A (en) 1999-03-24 2000-03-15 thin film forming device and liquid crystal display having thin film formed using the same

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