KR20000031238A - Laser marking system for fabricating semiconductor device - Google Patents

Laser marking system for fabricating semiconductor device Download PDF

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Publication number
KR20000031238A
KR20000031238A KR1019980047179A KR19980047179A KR20000031238A KR 20000031238 A KR20000031238 A KR 20000031238A KR 1019980047179 A KR1019980047179 A KR 1019980047179A KR 19980047179 A KR19980047179 A KR 19980047179A KR 20000031238 A KR20000031238 A KR 20000031238A
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South Korea
Prior art keywords
wafer
transfer arm
wafer transfer
wafers
carrier
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KR1019980047179A
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Korean (ko)
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최재호
곽시영
최병철
심범식
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윤종용
삼성전자 주식회사
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Priority to KR1019980047179A priority Critical patent/KR20000031238A/en
Publication of KR20000031238A publication Critical patent/KR20000031238A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A laser marking system is provided to prevent a wafer transfer arm from being contacted with other peripheral wafers and to prevent the wafers from being broken or polluted by contracting the thickness of the wafer transfer arm loading or unloading the wafers from a wafer carrier. CONSTITUTION: When a wafer transfer arm(3) takes a wafer(1) loaded on the lower end of a wafer carrier(2), a wafer transfer unit revolves the wafer transfer arm to move the wafer to a process chamber. The wafer is marked in the process chamber, and then the wafer is taken by the wafer transfer arm again for being moved to the wafer carrier by revolving the wafer transfer arm with the wafer transfer unit. The wafer transfer arm is prepared to have 2mm of thickness(T) so that the thickness of the wafer transfer arm is smaller than a height(H) of a space into which the wafer transfer arm is inserted. Moreover, the wafer transfer arm is not contacted with other wafers placed on the upper and lower portions of the wafer when loading and unloading the wafer.

Description

반도체장치 제조용 레이저 마킹장치Laser Marking Device for Semiconductor Device Manufacturing

본 발명은 반도체장치 제조용 레이저 마킹장치에 관한 것으로서, 보다 상세하게는 다수개의 웨이퍼가 적재된 웨이퍼캐리어로부터 상기 웨이퍼의 이송시 상기 웨이퍼의 주변에 위치한 다른 웨이퍼들과의 마찰을 방지하도록 두께가 축소되어 형성된 웨이퍼 이송아암을 구비하는 반도체장치 제조용 레이저 마킹장치에 관한 것이다.The present invention relates to a laser marking apparatus for manufacturing a semiconductor device, and more particularly, a thickness thereof is reduced to prevent friction with other wafers located around the wafer when the wafer is transferred from a wafer carrier having a plurality of wafers loaded thereon. A laser marking apparatus for manufacturing a semiconductor device having the formed wafer transfer arm.

일반적으로 반도체 제조공정 내에서 웨이퍼는 사진, 이온확산, 식각, 화학기상증착 및 금속증착 등의 공정을 반복하여 거친 후 반도체장치인 칩으로 제작된다.In general, in a semiconductor manufacturing process, a wafer is repeatedly fabricated through photographic, ion diffusion, etching, chemical vapor deposition, and metal deposition, and then manufactured into a semiconductor device chip.

상기 공정들을 거친 후, 상기 웨이퍼는 양질의 칩만 개개로 분리하기 위하여 웨이퍼 상태에서의 칩의 불량여부를 판정하는 검사공정(Test Process)을 거치고, 검사결과가 양호한 칩은 전기적, 물리적 특성을 지닐 수 있도록 패키지(Package)상태로 형성화하는 조립공정(Assembly Process)으로 이송된다.After the above processes, the wafer is subjected to a test process for determining whether a chip is defective in a wafer state in order to separate only high quality chips individually, and a good test result can have electrical and physical characteristics. It is transferred to an assembly process that is formed into a package state so that it can be formed.

이러한, 상기 검사 및 조립공정 중에는 상기 칩의 상, 하면에 각각 제품형명, 작업주, 관리코드 및 조립된 날짜 등의 각종 정보를 인쇄하는 마킹공정(Marking Process)이 있고, 상기 마킹공정에는 잉크(Ink)를 사용하는 잉크 마킹방법과, 레이저(Laser)를 사용하는 레이저 마킹방법이 있으며, 각종 편의성 및 유지 관리의 용이성으로 인하여 레이저를 사용하는 상기 레이저 마킹방법이 보편화되고 있는 추세이다.In the inspection and assembly process, there is a marking process for printing various types of information such as product type name, working week, management code, and assembled date on the upper and lower surfaces of the chip, respectively. There is an ink marking method using an ink and a laser marking method using a laser, and the laser marking method using a laser is becoming common due to various conveniences and ease of maintenance.

그리고, 웨이퍼 상태에서의 상기 칩에 상기 마킹공정을 실시하도록 반도체장치 제조용 마킹장치가 구성되었다.And the marking apparatus for semiconductor device manufacture was comprised so that the said marking process may be performed to the said chip in a wafer state.

여기서, 종래의 반도체장치 제조용 마킹장치 중 레이저를 사용하는 반도체장치 제조용 레이저 마킹장치에 대해 설명하면, 상기 반도체장치 제조용 레이저 마킹장치는 웨이퍼에 레이저를 이용하여 마킹을 실시하도록 마킹공정이 이루어지는 공정챔버를 구비하고 있다.Here, a description will be given of a laser marking apparatus for manufacturing a semiconductor device using a laser among the marking apparatus for manufacturing a conventional semiconductor device. The semiconductor marking apparatus for manufacturing a semiconductor device includes a process chamber in which a marking process is performed to perform marking using a laser on a wafer. Equipped.

그리고, 상기 공정챔버의 내부로 상기 웨이퍼를 로딩 및 언로딩하는 웨이퍼 이송부가 설치되어 있으며, 상기 웨이퍼 이송부는 웨이퍼캐리어에 적재된 다수개의 상기 웨이퍼를 순차적으로 파지한 후, 상기 공정챔버의 내부로 로딩 및 언로딩하는 웨이퍼 이송아암을 구비하고 있다.A wafer transfer unit is installed to load and unload the wafer into the process chamber. The wafer transfer unit sequentially holds a plurality of the wafers loaded on a wafer carrier and then loads the wafer into the process chamber. And an unloading wafer transfer arm.

즉, 최초 상기 웨이퍼 이송아암이 상기 웨이퍼캐리어의 하단부에 적재된 상기 웨이퍼를 파지하면, 상기 웨이퍼 이송부는 상기 웨이퍼 이송아암을 회전시켜 상기 웨이퍼를 상기 공정챔버로 이동시킨다.That is, when the wafer transfer arm first grips the wafer loaded on the lower end of the wafer carrier, the wafer transfer unit rotates the wafer transfer arm to move the wafer to the process chamber.

상기 공정챔버에서는 상기 웨이퍼에 마킹을 실시하고, 마킹이 끝난 상기 웨이퍼는 다시 상기 웨이퍼 이송아암에 의해 파지된다.In the process chamber, the wafer is marked, and the marked wafer is held again by the wafer transfer arm.

그리고, 상기 웨이퍼 이송부가 상기 웨이퍼 이송아암을 회전시킴으로써 상기 웨이퍼를 상기 웨이퍼캐리어로 이동시키게 된다.Then, the wafer transfer unit moves the wafer to the wafer carrier by rotating the wafer transfer arm.

그러나, 상기 웨이퍼는 그 직경이 6인치 또는 8인치로 다양하게 형성되어 있으며, 각각의 상기 웨이퍼는 그 직경의 크기에 따라 각기 다른 규격의 웨이퍼캐리어에 적재되게 된다.However, the wafers are variously formed with a diameter of 6 inches or 8 inches, and each wafer is loaded on wafer carriers of different specifications according to the size of the diameter.

즉, 상기 웨이퍼캐리어에 적재되는 상기 웨이퍼들 사이의 피치(Pitch)는 6인치 웨이퍼용 웨이퍼캐리어에서의 웨이퍼 피치가 8인치 웨이퍼용 웨이퍼캐리어에서의 웨이퍼 피치보다 작으며, 각각의 상기 웨이퍼 피치에 대응하여 상기 웨이퍼캐리어가 각각 제작되어 있다.That is, the pitch between the wafers loaded on the wafer carrier is less than the wafer pitch in the wafer carrier for 6-inch wafer, and corresponds to the respective wafer pitches. The wafer carriers are produced respectively.

이때, 일반적으로 상기 웨이퍼 이송아암의 두께는 8인치 웨이퍼용 웨이퍼캐리어에서의 웨이퍼 피치에 대응하여 3mm 의 두께로 형성되어 있으므로, 상기 웨이퍼 이송아암이 6인치용 웨이퍼캐리어의 내부에 삽입되어 상기 웨이퍼를 로딩 및 언로딩할 때에는 에러가 발생하게 되었다.At this time, since the thickness of the wafer transfer arm is generally 3 mm thick corresponding to the wafer pitch of the wafer carrier for 8-inch wafers, the wafer transfer arm is inserted into the 6-inch wafer carrier to provide the wafer. An error occurred when loading and unloading.

이는 상기 웨이퍼 이송아암이 상기 6인치용 웨이퍼캐리어의 내부에 삽입되어 상기 웨이퍼를 로딩 및 언로딩시킬 때, 상기 6인치용 웨이퍼캐리어에서의 웨이퍼 피치가 상기 8인치용 웨이퍼캐리어에서의 웨이퍼 피치보다 작으므로 상기 웨이퍼 이송아암이 삽입되어 동작하기 위한 여유공간이 부족하게 되고, 이는 상기 웨이퍼 이송아암이 로딩 및 언로딩하고자 하는 웨이퍼의 상, 하부에 위치한 다른 웨이퍼들과 접촉하게 되어 주변의 웨이퍼들이 바닥으로 떨어져 깨지거나, 오염이 되는 문제점을 일으키게 되었다.This means that when the wafer transfer arm is inserted into the 6 inch wafer carrier to load and unload the wafer, the wafer pitch at the 6 inch wafer carrier is smaller than the wafer pitch at the 8 inch wafer carrier. Therefore, there is a lack of free space for the wafer transfer arm to be inserted and operated. This means that the wafer transfer arm comes into contact with other wafers located above and below the wafer to be loaded and unloaded. The problem is that they break down and become polluted.

또한, 상기 웨이퍼 이송아암이 마찰이 큰 플라스틱 재질로 형성되어 있으므로 상기 웨이퍼 이송아암과 상기 웨이퍼와의 마찰에 의해 상기 웨이퍼에 긁힘과 같은 불량이 발생하게 되는 문제점이 있었다.In addition, since the wafer transfer arm is formed of a high friction plastic material, a defect such as scratching occurs in the wafer by friction between the wafer transfer arm and the wafer.

본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 웨이퍼캐리어로부터 웨이퍼들을 로딩 및 언로딩하는 웨이퍼 이송아암의 두께를 축소함으로써, 상기 웨이퍼 이송아암이 주변의 다른 웨이퍼들과 접촉하는 것을 방지하고, 상기 웨이퍼들이 바닥에 떨어져 깨지거나, 오염되는 것을 방지하는 반도체장치 제조용 레이저 마킹장치를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above conventional problem, and an object thereof is to reduce the thickness of a wafer transfer arm for loading and unloading wafers from a wafer carrier so that the wafer transfer arm is in contact with other wafers in the vicinity. It is to provide a laser marking device for manufacturing a semiconductor device that prevents the wafer from being broken and contaminated on the floor.

도1은 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조용 레이저 마킹장치를 나타낸 사시도이다.1 is a perspective view showing a laser marking apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing

1 : 웨이퍼(Wafer) 2 : 웨이퍼캐리어(Wafer Carrier)1: Wafer 2: Wafer Carrier

3 : 웨이퍼 이송아암 T : 웨이퍼 이송아암의 두께3: wafer transfer arm T: thickness of wafer transfer arm

H : 여유공간의 높이H: height of free space

상기의 목적을 달성하기 위하여 본 발명의 반도체장치 제조용 레이저 마킹장치는, 레이저를 이용하여 웨이퍼의 상면에 제품형명, 작업주 및 관리코드 등을 인쇄하는 마킹공정이 실시되도록 다수개의 상기 웨이퍼가 적재된 웨이퍼캐리어로부터 상기 마킹공정이 실시되는 공정챔버의 내부로 상기 웨이퍼를 로딩 및 언로딩시키는 웨이퍼 이송아암의 두께가 1.5mm 내지 2.5mm 인 것을 특징으로 한다.In order to achieve the above object, a laser marking apparatus for manufacturing a semiconductor device of the present invention includes a plurality of wafers loaded such that a marking process for printing a product type name, a work week, and a management code is performed on a top surface of a wafer using a laser. The thickness of the wafer transfer arm for loading and unloading the wafer from the wafer carrier into the process chamber where the marking process is performed is 1.5mm to 2.5mm.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도1을 참조하여 설명하면, 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조용 레이저 마킹장치는 웨이퍼(1)에 레이저를 이용하여 마킹을 실시하도록 마킹공정이 이루어지는 공정챔버(도시하지 않음)를 구비하고 있다.Referring to FIG. 1, a laser marking apparatus for manufacturing a semiconductor device according to an exemplary embodiment of the present invention includes a process chamber (not shown) in which a marking process is performed to perform marking on a wafer 1 using a laser. Doing.

그리고, 상기 공정챔버의 내부로 상기 웨이퍼(1)를 로딩 및 언로딩하는 웨이퍼 이송부(도시하지 않음)가 설치되어 있으며, 상기 웨이퍼 이송부는 웨이퍼캐리어(2)에 적재된 다수개의 상기 웨이퍼(1)를 순차적으로 파지한 후, 상기 공정챔버의 내부로 로딩 및 언로딩하는 웨이퍼 이송아암(3)을 구비하고 있고, 상기 웨이퍼 이송아암(3)의 두께(T)는 1.5mm 내지 2.5mm 로 제작되는 것이 바람직하며, 본 발명의 바람직한 일 실시예에서는 상기 웨이퍼 이송아암(3)의 두께(T)를 2mm 로 제작하였다.In addition, a wafer transfer unit (not shown) is installed in the process chamber to load and unload the wafer 1, and the wafer transfer unit includes a plurality of the wafers 1 loaded on the wafer carrier 2. After holding the sequential, and having a wafer transfer arm (3) for loading and unloading into the process chamber, the thickness (T) of the wafer transfer arm (3) is made of 1.5mm to 2.5mm In one preferred embodiment of the present invention, the thickness T of the wafer transfer arm 3 is 2 mm.

그리고, 상기 웨이퍼 이송아암(3)의 재질은 마찰이 적은 세라믹계열인 것이 바람직하다.In addition, the material of the wafer transfer arm 3 is preferably a ceramic series with low friction.

한편, 상기 웨이퍼(1)를 상기 웨이퍼캐리어(2)로부터 상기 공정챔버로 로딩 및 언로딩하는 동작에 대해 설명하면, 최초 상기 웨이퍼 이송아암(3)이 상기 웨이퍼캐리어(2)의 하단부에 적재된 상기 웨이퍼(1)를 파지하면, 상기 웨이퍼 이송부는 상기 웨이퍼 이송아암(3)을 회전시켜 상기 웨이퍼(1)를 상기 공정챔버로 이동시킨다.On the other hand, the operation of loading and unloading the wafer 1 from the wafer carrier 2 into the process chamber will be described. First, the wafer transfer arm 3 is placed on the lower end of the wafer carrier 2. When the wafer 1 is held, the wafer transfer part rotates the wafer transfer arm 3 to move the wafer 1 to the process chamber.

그리고, 상기 공정챔버에서는 상기 웨이퍼(1)에 마킹을 실시하고, 마킹이 끝난 상기 웨이퍼(1)는 다시 상기 웨이퍼 이송아암(3)에 의해 파지되고, 상기 웨이퍼 이송부가 상기 웨이퍼 이송아암(3)을 회전시킴으로써 상기 웨이퍼(1)를 상기 웨이퍼캐리어(2)로 이동시키게 된다.In the process chamber, the wafer 1 is marked, the marked wafer 1 is again gripped by the wafer transfer arm 3, and the wafer transfer portion 3 is held by the wafer transfer arm 3. By rotating, the wafer 1 is moved to the wafer carrier 2.

이때, 상기 웨이퍼(1)는 그 직경이 6인치 또는 8인치로 다양하게 형성되어 있으며, 각각의 상기 웨이퍼(1)는 그 직경의 크기에 따라 각기 다른 규격의 웨이퍼캐리어에 적재되게 된다.At this time, the wafer 1 is formed in a variety of diameters of 6 inches or 8 inches, each of the wafer 1 is to be loaded on a wafer carrier of different specifications according to the size of the diameter.

즉, 상기 웨이퍼캐리어(2)에 적재되는 상기 웨이퍼(1)들 사이의 피치는 6인치 웨이퍼용 웨이퍼캐리어에서의 웨이퍼 피치가 8인치 웨이퍼용 웨이퍼캐리어에서의 웨이퍼 피치보다 작으며, 다양한 규격의 상기 웨이퍼들 사이의 피치에 대응하여 상기 웨이퍼캐리어(2)가 각각 제작되어 있다.That is, the pitch between the wafers 1 loaded on the wafer carrier 2 is less than the pitch of the wafer in the wafer carrier for 6-inch wafer, and the pitch of the wafer in the 8-inch wafer carrier. The wafer carriers 2 are each produced in correspondence with the pitch between the wafers.

이때, 상기 웨이퍼 이송아암(3)은 그 두께(T)가 2mm 로 제작되므로, 상기 웨이퍼 이송아암(3)이 6인치용 웨이퍼캐리어의 내부에 삽입되어 상기 웨이퍼(1)를 로딩 및 언로딩할 때, 상기 웨이퍼 이송아암(3)의 두께(T)가 상기 웨이퍼캐리어(2)의 내부에 형성되어 상기 웨이퍼 이송아암(3)이 삽입되는 여유공간의 높이(H)보다 작으며, 이는 상기 웨이퍼(1)의 상, 하부에 위치한 다른 웨이퍼들과 상기 웨이퍼 이송아암(3)이 접촉하는 것을 방지할 수 있다.At this time, since the wafer transfer arm 3 is manufactured to have a thickness T of 2 mm, the wafer transfer arm 3 is inserted into the 6-inch wafer carrier to load and unload the wafer 1. At this time, the thickness T of the wafer transfer arm 3 is formed inside the wafer carrier 2 and is smaller than the height H of the free space in which the wafer transfer arm 3 is inserted, which is the wafer. It is possible to prevent the wafer transfer arm 3 from contacting other wafers located above and below (1).

그리고, 상기 웨이퍼 이송아암(3)이 마찰이 적은 세라믹계열의 재질로 형성됨으로써 마찰에 의해 상기 웨이퍼(1)에 긁힘 등의 불량을 방지할 수 있다.In addition, since the wafer transfer arm 3 is formed of a ceramic-based material having a low friction, it is possible to prevent a defect such as scratching of the wafer 1 due to friction.

이상에서와 같이 본 발명에 따른 반도체장치 제조용 레이저 마킹장치에 의하면 웨이퍼 이송아암이 로딩 및 언로딩하고자 하는 웨이퍼의 주변에 위치한 다른 웨이퍼들과 상기 웨이퍼 이송아암과의 접촉을 방지함으로써 상기 웨이퍼들이 바닥으로 떨어져 깨지거나, 오염이 되는 것을 방지하고, 상기 웨이퍼와의 마찰에 의해 상기 웨이퍼에 긁힘 등의 불량을 방지하게 하는 효과를 갖는다.As described above, according to the laser marking apparatus for manufacturing a semiconductor device according to the present invention, the wafer transfer arm is prevented from contacting the wafer transfer arm with other wafers positioned around the wafer to be loaded and unloaded. It prevents from being broken and contaminated, and prevents defects such as scratches on the wafer by friction with the wafer.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상범위내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical scope of the present invention, and such modifications and modifications belong to the appended claims.

Claims (2)

레이저를 이용하여 웨이퍼의 상면에 제품형명, 작업주 및 관리코드 등을 인쇄하는 마킹공정이 실시되도록 다수개의 상기 웨이퍼가 적재된 웨이퍼캐리어로부터 상기 마킹공정이 실시되는 공정챔버의 내부로 상기 웨이퍼를 로딩 및 언로딩시키는 웨이퍼 이송아암의 두께가 1.5mm 내지 2.5mm 인 것을 특징으로 하는 반도체장치 제조용 레이저 마킹장치.The wafer is loaded into a process chamber in which the marking process is performed from a wafer carrier having a plurality of wafers loaded thereon so that a marking process for printing a product type name, working week, and management code on the upper surface of the wafer is performed using a laser. And an unloading wafer transfer arm having a thickness of 1.5 mm to 2.5 mm. 제 1 항에 있어서,The method of claim 1, 상기 웨이퍼 이송아암의 재질은 세라믹계열인 것을 특징으로 하는 상기 반도체장치 제조용 레이저 마킹장치.The wafer marking arm is a material of the laser marking device for the semiconductor device manufacturing, characterized in that the ceramic series.
KR1019980047179A 1998-11-04 1998-11-04 Laser marking system for fabricating semiconductor device KR20000031238A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200464469Y1 (en) * 2010-05-04 2013-01-21 주식회사 에타맥스 Semiconductor manufacturing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200464469Y1 (en) * 2010-05-04 2013-01-21 주식회사 에타맥스 Semiconductor manufacturing apparatus

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